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Ahmed et al., 2025 - Google Patents
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Ahmed et al., 2025 - Google Patents

“Nano-In-Nano” Schottky Diodes Fabricated by Combining Self-Aligned Nanogap Patterning with Bottom-Up ZnO Nanowire Growth

Ahmed et al., 2025

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Document ID
5721042560722215434
Author
Ahmed U
Wyatt-Moon G
Flewitt A
Publication year
Publication venue
ACS Applied Electronic Materials

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Nanoscale semiconductors offer significant advantages over their bulk semiconductor equivalents for electronic devices as a result of the ability to geometrically tune electronic properties, the absence of internal grain boundaries, and the very low absolute number of …
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
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