Rlnとは 意味・読み方・使い方

The resistance value of the unit resistances SBn after the fuses RLn being cut off increases by a resistance value of the setting resistance element RTn compared with the resistance value of the fuses RLn before cutoff, therefore, the error of the resistance value of the unit resistances SBn after the fuses RLn being cut off can be suppressed.例文帳に追加

ヒューズＲＬｎ切断後の単位抵抗ＳＢｎの抵抗値は、ヒューズＲＬｎ切断前に比べて設定抵抗素子ＲＴｎの抵抗値分だけ増加するので、ヒューズＲＬｎの抵抗値に起因するヒューズＲＬｎ切断後の単位抵抗ＳＢｎの抵抗値誤差を抑制できる。 - 特許庁

Moreover, when N is defined as the number of output signals and the impedance of the Nth power source wiring as RLO and also (n) is defined as an arbitrary number from 1 to N, the impedance RLn of the nth power source wiring is set to be RLn=RLO/{N-(n-1)}.例文帳に追加

また、Ｎを出力信号数としてＮ番目の電源配線のインピーダンスをＲＬＯとし、かつｎを１からＮまでの任意の数として、ｎ番目の電源配線のインピーダンスＲＬｎを、ＲＬｎ＝ＲＬＯ／｛Ｎ−（ｎ−１）｝と設定する。 - 特許庁

A charge resistance value Rcn when a positive electrode side ground fault resistance voltage VC1n is set by a closed circuit in Fig.5(c) becomes R1+RLn.例文帳に追加

図５（ｃ）の閉回路によりに正極側地絡抵抗電圧ＶＣ１ｎが設定されるときの充電抵抗値ＲｃｎはＲ１＋ＲＬｎとなる。 - 特許庁

The unit resistances SBn is provided so that a composite resistance composed of the fuses RLn before cutoff, the setting resistance element RTn, and the error-correcting resistance element Rldn as well as the resistance value of the only error-correcting resistance element Rldn are equalized.例文帳に追加

単位抵抗ＳＢｎでは、ヒューズ切断前のヒューズＲＬｎ、設定抵抗素子ＲＴｎ及び誤差補正抵抗素子Ｒｌｄｎの合成抵抗と、誤差補正抵抗素子Ｒｌｄｎ単独の抵抗値が等しくなるように設定されている。 - 特許庁

The resistance circuit is constituted by connecting one or a plurality of second dedicated current breaking resistive elements RC0 in parallel to a unit resistance network constituted by connecting a plurality of unit resistances, each constituted by connecting a setting resistance element RTn and a first dedicated current breaking resistive element RLn in parallel, in series.例文帳に追加

設定抵抗素子ＲＴｎと第１の切断専用抵抗素子ＲＬｎを並列接続した単位抵抗を複数の直列接続した単位抵抗網に第２の切断専用抵抗素子ＲＣ０を１個または複数個並列に接続して抵抗回路を構成する。 - 特許庁

The magnetic sensor 1 is constituted by disposing a matrix including a plurality of elemental circuits PX11-PXmn comprising a thin film hall effect element THD, a drive circuit DV, a read circuit RD, detection control lines SL1-SLm and detection output lines RL1-RLn.例文帳に追加

薄膜ホール効果素子ＴＨＤ、駆動回路ＤＶ、読出回路ＲＤ、検出制御配線ＳＬ１からＳＬｍ、検出出力配線ＲＬ１からＲＬｎで構成された複数の要素回路ＰＸ１１からＰＸｍｎをマトリクス状に配置して磁場センサ１を構成する。 - 特許庁

An error-correcting resistance element Rldn and setting resistance element RTn are connected in series each other, m+1 piece (m is a positive integer) of unit resistances SBn, in which fuses RLn are connected in parallel to the setting resistance element RTn and the error-correcting resistance element Rldn, are connected in series between a resistance element Rbottom and a resistance element Rtop.例文帳に追加

誤差補正抵抗素子Ｒｌｄｎと設定抵抗素子ＲＴｎが直列に接続され、設定抵抗素子ＲＴｎ及び誤差補正抵抗素子ＲｌｄｎにヒューズＲＬｎが並列に接続されてなるｍ＋１個（ｍは正の整数）の単位抵抗ＳＢｎが抵抗素子Ｒbottomと抵抗素子Ｒtopの間に直列に接続されている。 - 特許庁