high impurity concentrationとは 意味・読み方・使い方

The channel region 27 includes a pair of low-concentration impurity regions 25 with relatively smaller impurity concentration, and a high-concentration impurity region 26 that is located while being held between the low-concentration impurity regions 25 and has relatively large impurity concentration.例文帳に追加

チャネル領域２７は、相対的に不純物濃度が小さい１対の低濃度不純物領域２５と、低濃度不純物領域２５に挟まれて位置し、相対的に不純物濃度が大きい高濃度不純物領域２６とを含む。 - 特許庁

The n-type high concentration diffusion layer 10 has an impurity concentration higher than that of the n-type low concentration diffusion layer 9.例文帳に追加

ｎ型高濃度拡散層１０は、ｎ型低濃度拡散層９よりも不純物濃度が高い。 - 特許庁

The impurity concentration of the high concentration region 30a is higher than that of the intermediate concentration region 30b.例文帳に追加

高濃度領域３０ａの不純物濃度は、中濃度領域３０ｂの不純物濃度より高い。 - 特許庁

Thus, impurity concentration of a surface layer is remarkably reduced while holding the impurity concentration inside the silicon wafer 101 as high concentration.例文帳に追加

これにより、シリコンウェハ１０１内部の不純物濃度を高濃度に保持したまま、表層の不純物濃度を著しく低減させられる。 - 特許庁

The source and drain regions 31 include a p-type low concentration impurity region 29 contain relatively low impurity concentration of the first conductivity type and a p-type high concentration impurity region 30 containing relatively high p-type impurity concentration.例文帳に追加

ソースおよびドレイン領域３１は、相対的に第１導電型の不純物濃度が小さいｐ型低濃度不純物領域２９と、相対的にｐ型不純物濃度が大きいｐ型高濃度不純物領域３０とを含む。 - 特許庁

The P^+ layer is a high concentration layer with an impurity concentration of boron around 1×10^20/cc.例文帳に追加

Ｐ^＋層はボロンの不純物濃度が１×１０^２０／ｃｃ程度の高濃度層である。 - 特許庁

In this manufacturing method, the high-concentration n type impurity region is prepared under the channel layer.例文帳に追加

チャネル層下方に、高濃度のｎ型不純物層を設ける。 - 特許庁

The second semiconductor region 11 is composed of an outer section 19 having a high impurity concentration, and an inner section 21 having a low impurity concentration.例文帳に追加

第２半導体領域１１は、不純物濃度が高い外側部１９と低い内側部２１とで構成される。 - 特許庁