200414577 Π) 玖、發明說明 【發明所屬之技術領域】 本發明係相關於表面處理裝置（或電漿處理裝置）， 尤其是相關於在大氣壓力下產生電漿並且排出電漿到電漿 產生空間外面（或放電空間）用以將電漿與被處理的基底 表面接觸之表面處理裝置。 • 【先前技術】 諸如自基底表面去除諸如有機物質等污染、剝除抗蝕 劑、增加有機薄膜的黏附力、表面修正、薄膜形成、還原 金屬氧化物、或淸洗液晶用玻璃基底等表面處理可分成化 學表面處理及電漿表面處理。在表面處理中，化學表面處 理有化學對環境產生不利影響的缺點。 其中一電漿表面處理方法爲利用低溫低壓電漿的表面 處理。該方法在低壓室內產生電漿，然後低壓電漿與基底 • 接觸以處理其表面。儘管其優良的性能，但是該方法並未 普遍被使用，因爲該方法需要保持低壓的真空裝置，如此 難以將該方法應用到在大氣壓力下執行的連續處理。結果 ，已積極對大氣壓力下產生電漿及將它們使用於表面處理 等方面做硏究。 日本未審查專利申請案號2-15171，3-241739,或1· 306569揭示基底位在電漿產生空間內之表面處理方法及 裝置。尤其是，該方法包含配置一對彼此平行的金屬電極 並且以至少一介電加以絕緣，將處理氣體引進形成在電極 -4- (2) 200414577 之間的電漿產生空間，在電極之間施加交流電以由處理氣 體產生電漿，及以產生的電將處理位在電漿產生空間內的 基底表面。然而，根據文件中所說明的方法及裝置，因爲 基底需被定位在兩電極之間，所以只能處理極薄的基底。 爲此原因，其應用非常有限。另外，當基底不是介電而是 導電金屬或半導體時，由於施加到介電的高電壓，有破壞 基底的高危險性。 φ 爲了解決此缺點，建議有一方法，其中在電漿產生空 間內產生的電漿被排出到電漿產生空間外面，在那裡與基 底接觸以處理基底表面。 US 5,185,132揭示一表面處理方法，包含將稀有氣體 及反應氣體的混合氣體引進具有介電塗層的平板電極之反 應容器，其中彼此平行的兩或更多電極表面被設有固體介 電，及其中在該電極下游提供基底，在大氣壓力下以電漿 激勵該混合氣體以產生活性物種，及以該活性物種處理該 • 基底表面。圖la爲使用該方法的表面處理裝置之立體圖 ，及圖1 b爲圖1 a的裝置所使用的電極結構之橫剖面圖。 如圖la及lb所示，表面處理裝置包含兩平板電極（ 101a5 101b )，彼此平行並且以介電（l〇6a，106b )加以 絕緣；處理氣體入口（103) ’裝設在形成在電極（i〇ia， 1 〇 1 b )之間的電漿產生空間（1 02 ) —側上；出口（ 1 〇4 ) ’裝設在電漿產生空間（1 02 )的相對側上。處理氣體首 先經由入口（ 103 )引進電漿產生空間（1〇2 ),在那裡以 施加到電極（1 01 a 5 1 0 1 b )的交流電壓轉換成電漿。電漿 -5- (3) 200414577 及未被轉換成電漿之處理氣體經由出口（ 1 0 4 )排出到電 漿產生空間（1 0 2 )的外面，然後與基底表面接觸並處理 它。然而，因爲出口（ 104 )被裝設在電漿產生空間（ι〇2 )的一側上，所以該表面處理裝置有表面的有效處理寬度 (W )被限制的缺點。加寬寬度（w )需要突然上升施加 的交流電壓。 爲了解決上述缺點’ US 6,424,091揭示一表面處理裝 置，包含：a)至少一對電極，該對電極的至少一個在其外 表面具有介電層；b)氣體供應機構，用以供應電漿產生用 氣體到界定在該電極之間的該放電空間，其中該氣體供應 機構自該放電空間朝基底提供一股電漿產生用氣體；及〇 電力供應，用以在該電極之間供應A C電壓以在該放電空 間產生電漿產生用氣體的該電漿，其中該對電極的至少一 個具有突出到該放電空間內的彎曲表面，該放電空間被配 置成自該放電空間朝該基底向外散開該電漿。圖2爲該表 φ 面處理裝置所使用的電極結構之較佳實施例的橫剖面圖， 其中電漿產生在以介電（2 0 2 a，2 0 2 b )加以絕緣的兩圓柱 形電極（201 a 5 2 0 1 b )之間，如此產生的電漿接觸並且處 理位在表面處理裝置外面的基底（204)表面。具有圓柱 形電極的表面處理裝置可以加寬處理寬度。但是，因爲與 平板電極結構比較，圓柱形電極之每電極單位面積的電漿 產生空間裝置明顯減少，所以該裝置仍然有低電漿轉換效 率的缺點。即將處理氣體轉換成電漿的電極有效面積明顯 減少，如此減少電漿轉換效率及降低基底的處理效率。而 -6- (4) 200414577 且，由於低電漿轉換效率的結果所浪費的電力’所以該表 面處理裝置比平板電極需要更多電力。 [發明內容】 因此，.本發明的目的係爲了設置一表面處理裝置，解 決習知平板電極結構所導致的有效處理面積之窄小寬度問 題，及解決圓柱形電極結構所產生的電漿放電空間減小問 •題。 本發明的另一目的係爲了設置一表面處理裝置，可以 在增加基底的總處理面積同時’又能夠以連續方法處理基 底表面。 藉由設置由處理氣體儲存部分及位在處理氣體儲存部 分下面的電漿產生部分組成之表面處理裝置將完成在本發 明的詳細說明將說明之上述目的及其他，其中a)處理氣體 儲存部分包含第一入口，經由此引入處理氣體，及b)電 φ 漿產生部分，包含彼此面對的上電極及下電極，電漿產生 空間形成在電極之間，至少一介電使上電極及下電極絕緣 ，散熱器降低電極的表面溫度，經由第二入口，處理氣體 自處理氣體儲存部分被引入電漿產生空間，經由出口，電 漿及未被轉換成電漿的處理氣體被排出到電漿產生空間的 外面，及交流電供應施加交流電壓，其中上電極及下電極 -二者都是平板電極，出口形成在下電極上，及基底位在下 電極下面。 (5) 200414577 【實施方式】 圖3爲根據本發明之表面處理裝置的較佳實施例之橫 剖面圖。如圖3所示，表面處理裝置由處理氣體儲存部分 ( 3 00 )及位在處理氣體儲存部分下面的電漿產生部分（ 4〇〇 )組成。處理氣體儲存部分（3 00 )具有將處理氣體平 穩供應到電漿產生部分（4 0 0 )的作用，因此，可就處理 容量及轉換效率適當選擇其體積。電漿產生部分（400 ) φ具有將處理氣體轉換成電漿的作用。 經由第一入口（301 a5 301b)電漿產生用處理氣體被 引進處理氣體儲存部分（3 00 )，第一入口（ 30 1a，3 01b) 被放置在處理氣體儲存部分（3 0 0 )的一側上。雖然舉例 兩第一入口（ 301a 5 3 0 1 b )將處理氣體引進處理氣體儲存 部分（3 00 )，但是應理解第一入口的數目並不侷限於此 。若需要的話可放置四個第一入口在處理氣體儲存部分（ 3 0 0 )的四側上，或只有一入口位在處理氣體儲存部分（ φ 300)的上牆中央上。 電漿產生部分（ 400 )包括上平板電極（401a)及下 平板電極（401b )、形成在電極（401 a 5 4 0 1 b )之間的電 漿產生空間（402)、使電極（401a，401b)絕緣之介電（ 403a，403b)、降低電極（401a，401b)的表面溫度之散 熱器（404a，4 0 4b )、自處理氣體儲存部分（3 0 0 )將處理 氣體引到電漿產生部分（400 )之第二入口（ 405 a，40 5b) 、及將產生的電漿及剩下的未轉換處理氣體排到電漿產生 空間（ 402)外面之出 口 （ 406a; 406b; 4〇6c5 406d，406e， 冬 (6) 200414577 總稱”4 0 6”）。基底（4 0 8 )位在在下電極（401b )下面。 上電極（401a)連接到交流電供應（4 07 )及下電極（ 4 0 1 b )被接地。200414577 Π) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to a surface treatment device (or a plasma treatment device), and particularly relates to generating a plasma under atmospheric pressure and discharging the plasma to a plasma generation space A surface treatment device used for contacting the plasma with the surface of the substrate to be treated on the outside (or discharge space). • [Prior art] Surface treatments such as removing contamination such as organic substances from the substrate surface, stripping resist, increasing the adhesion of organic thin films, surface correction, film formation, reducing metal oxides, or cleaning glass substrates for liquid crystals Can be divided into chemical surface treatment and plasma surface treatment. In surface treatment, chemical surface treatment has the disadvantage that chemistry has an adverse effect on the environment. One of the plasma surface treatment methods is the surface treatment using low temperature and low voltage plasma. This method generates a plasma in a low-voltage chamber, and then the low-voltage plasma contacts the substrate to treat its surface. Despite its excellent performance, this method is not commonly used because it requires a vacuum device that maintains a low pressure, making it difficult to apply the method to continuous processing performed at atmospheric pressure. As a result, research has been actively conducted on the generation of plasma under atmospheric pressure and their use in surface treatment. Japanese Unexamined Patent Application No. 2-15171, 3-241739, or 1.306569 discloses a surface treatment method and device for a substrate located in a plasma generating space. In particular, the method includes arranging a pair of metal electrodes parallel to each other and insulating them with at least one dielectric, introducing a process gas into a plasma generating space formed between the electrodes -4- (2) 200414577, and applying between the electrodes. The alternating current generates a plasma from the processing gas, and uses the generated electricity to process the substrate surface located in the plasma generating space. However, according to the method and apparatus described in the document, since the substrate needs to be positioned between two electrodes, only a very thin substrate can be processed. For this reason, its applications are very limited. In addition, when the substrate is not a dielectric but a conductive metal or semiconductor, there is a high risk of damaging the substrate due to the high voltage applied to the dielectric. φ In order to solve this disadvantage, a method is proposed in which the plasma generated in the plasma generating space is discharged to the outside of the plasma generating space, where it comes into contact with the substrate to treat the surface of the substrate. US 5,185,132 discloses a surface treatment method including introducing a mixed gas of a rare gas and a reaction gas into a reaction vessel of a flat electrode having a dielectric coating, wherein two or more electrode surfaces parallel to each other are provided with a solid dielectric, and among them A substrate is provided downstream of the electrode, the mixed gas is excited with a plasma under atmospheric pressure to generate an active species, and the surface of the substrate is treated with the active species. Fig. La is a perspective view of a surface treatment device using the method, and Fig. 1b is a cross-sectional view of an electrode structure used in the device of Fig. 1a. As shown in Figs. 1a and 1b, the surface treatment device includes two flat electrodes (101a5 101b), which are parallel to each other and insulated by a dielectric (106a, 106b); the processing gas inlet (103) is installed on the electrode ( ioia, 1001 b) between the plasma generating space (1 02)-on the side; the outlet (104) is installed on the opposite side of the plasma generating space (1 02). The processing gas is first introduced into the plasma generation space (102) through the inlet (103), where it is converted into a plasma with an AC voltage applied to the electrode (1 01 a 5 1 0 1 b). Plasma -5- (3) 200414577 and the processing gas that has not been converted into plasma are discharged to the outside of the plasma generating space (1 0 2) through the outlet (104), and then contact the substrate surface and process it. However, since the outlet (104) is installed on one side of the plasma generation space (ι02), the surface treatment device has a disadvantage that the effective treatment width (W) of the surface is limited. Widening the width (w) requires a sudden rise in the applied AC voltage. In order to solve the above disadvantages, US 6,424,091 discloses a surface treatment device including: a) at least one pair of electrodes, at least one of the pair of electrodes having a dielectric layer on an outer surface thereof; b) a gas supply mechanism for supplying plasma generation Gas to the discharge space defined between the electrodes, wherein the gas supply mechanism provides a plasma generation gas from the discharge space to the substrate; and 0 power supply for supplying an AC voltage between the electrodes to The discharge space generates the plasma of a plasma generating gas, wherein at least one of the pair of electrodes has a curved surface protruding into the discharge space, and the discharge space is configured to diffuse the electricity outward from the discharge space toward the substrate. Pulp. Fig. 2 is a cross-sectional view of a preferred embodiment of an electrode structure used in the surface treatment device of the table, in which a plasma is generated between two cylindrical electrodes insulated by a dielectric (2 0 2 a, 2 0 2 b). (201 a 5 2 0 1 b), the plasma thus generated contacts and treats the surface of the substrate (204) located outside the surface treatment device. The surface treatment device having a cylindrical electrode can widen the processing width. However, compared with the flat electrode structure, the plasma generating unit per unit area of the cylindrical electrode is significantly reduced, so the device still has the disadvantage of low plasma conversion efficiency. The effective area of the electrode that converts the processing gas into a plasma is significantly reduced, thus reducing the plasma conversion efficiency and the substrate processing efficiency. And -6- (4) 200414577 And, because the power wasted as a result of low plasma conversion efficiency ', this surface processing device requires more power than a flat electrode. [Summary of the Invention] Therefore, the purpose of the present invention is to provide a surface treatment device, solve the problem of the narrow width of the effective processing area caused by the conventional flat electrode structure, and solve the plasma discharge space generated by the cylindrical electrode structure. Reduce questions Another object of the present invention is to provide a surface treatment device which can increase the total processing area of the substrate while simultaneously processing the substrate surface in a continuous method. The surface treatment device composed of a processing gas storage section and a plasma generating section located below the processing gas storage section will accomplish the above-mentioned objects and others described in the detailed description of the present invention, wherein a) the processing gas storage section contains The first inlet, through which the processing gas is introduced, and b) the plasma φ generating part includes an upper electrode and a lower electrode facing each other, a plasma generating space is formed between the electrodes, and at least one dielectric causes the upper electrode and the lower electrode Insulation, the radiator reduces the surface temperature of the electrode. Through the second inlet, the processing gas is introduced into the plasma generation space from the processing gas storage part. Through the outlet, the plasma and the processing gas that has not been converted into plasma are discharged to the plasma. The outside of the space and the AC power supply apply an AC voltage, where the upper electrode and the lower electrode-both are flat electrodes, the outlet is formed on the lower electrode, and the substrate is located below the lower electrode. (5) 200414577 [Embodiment] Fig. 3 is a cross-sectional view of a preferred embodiment of a surface treatment apparatus according to the present invention. As shown in FIG. 3, the surface processing device is composed of a processing gas storage section (300) and a plasma generating section (400) located below the processing gas storage section. The processing gas storage part (300) has a function of stably supplying the processing gas to the plasma generation part (400). Therefore, its volume can be appropriately selected in terms of processing capacity and conversion efficiency. The plasma generating part (400) φ has the function of converting the processing gas into a plasma. The processing gas for plasma generation is introduced into the processing gas storage section (3 00) through the first inlet (301 a5 301b), and the first inlet (30 1a, 3 01b) is placed in a section of the processing gas storage section (3 0 0). On the side. Although two first inlets (301a 5 3 0 1 b) are used to introduce the processing gas into the processing gas storage section (3 00), it should be understood that the number of the first inlets is not limited to this. If necessary, four first inlets can be placed on the four sides of the processing gas storage section (300), or only one inlet can be located in the center of the upper wall of the processing gas storage section (φ 300). The plasma generating part (400) includes an upper flat electrode (401a) and a lower flat electrode (401b), a plasma generating space (402) formed between the electrodes (401a 5 4 0 1 b), and an electrode (401a, 401b) Insulation dielectric (403a, 403b), heat sink (404a, 40b) that lowers the surface temperature of electrode (401a, 401b), and self-processing gas storage part (300) directs the processing gas to the plasma The second inlet (405 a, 40 5b) of the generating part (400), and the outlet (406a; 406b; 4) that discharges the generated plasma and the remaining unconverted processing gas to the outside of the plasma generating space (402). 6c5 406d, 406e, winter (6) 200414577 (collectively "4 0 6"). The substrate (408) is located under the lower electrode (401b). The upper electrode (401a) is connected to the AC power supply (4 07) and the lower electrode (4 0 1 b) is grounded.
處理氣體首先經由裝設在處理氣體儲存部分（3 00 ) 的側牆上之第一入口（301a 5 3 0 1 b)引入處理氣體儲存部 分（3 0 0 )。引入的處理氣體然後經由位在介電（403 a ) 上的第二入口（ 4 05 a，4 0 5 b )供應到電漿產生空間（402 ) ，在那裡藉由自交流電供應（407 )供應的交流電壓幫助 轉換成電漿。電漿及剩下的未轉換處理氣體經由位在下電 極（401b )上的出口（ 406 )排到電漿產生空間（402 )外 面，以接觸將處理的基底（4 0 8 )表面。 圖4a爲圖3的表面處理裝置所使用之電極結構的立 體圖。如上述，電極結構包含彼此面對的上平板電極（ 401a)及下平板電極（401b)、形成在電極（401a，401b )之間的電漿產生空間（402 )、使電極（401a，401b )絕 緣之介電（403 a, 403b)。在介電（403a)上形成第二入 口（405a，405b)，處理氣體經由第二入口（405a，405b )自處理氣體儲存部分（3 00 )供應到電漿產生空間（402 )。以交流電供應所供應的交流電壓將引入電漿產生空間 (4 02 )的處理氣體轉換成電漿。產生的電漿及剩下之未 轉換成電漿的處理氣體經由形成在下電極（4 0 1 b )上的出 口（ 406a到406b，”406”）排到電漿產生空間（ 402 )外面 ，然後電漿接觸基底（4 0 8 )表面並處理它。在此實施例 中，出口（ 4 06 )的總處理寬度（D1+D2 + D3 + D4 + D5 )明 (7) 200414577 顯大於習知平板電極結構的處理寬度（W )，藉以大大增 加被處理的基底可能寬度。而且，本發明的另一優點係儘 管處理寬度（W)非常受到被供應電壓的限制，但是電極 (D )的長度並未明顯受到影響。換言之，雖然處理寬度 (W )典型上被供應電壓限制到0 · 0 1 m m〜3 0 m m，但是 電極（D)的長度幾乎不會被電壓影響，使得其長度可充 分增力□。結果，總處理寬度（D1+D2 + D3 + D4 + D5)也可顯 φ著增加。此外，根據習知例子，因爲需要裝置的許多修正 ，所以難以改變出口的形狀。根據本發明，出口（ 406 ) 形狀可有圓形、三角形、橢圓形、或任何其他形狀的各式 各樣變化，除了散熱器之外，無需改變裝置的任何部分。 因此，具有依據被處理的基底（4 0 8 )形狀可改變出口（ 4 0 6 )形狀之優點。圖4 b圖示出口被形成複數孔的此種示 範性實施例。而且，雖然在圖4a中第二入口（405a，405b )位在介電（4 03 a)的兩邊緣上，但是明顯地，第二入口 φ 可位在有關電漿產生空間（402)的總體積之介電（ 4 03 a )的所有四邊緣上。 本發明並不特別限制電漿產生用處理氣體的種類，可 廣泛使用在此領域中一般所使用的處理氣體。例如，可使 用氮、氧、稀有氣體、二氧化碳、氧化氮、全氟化氣體、 氫、氨、氯化物氣體、臭氧或其混合物等。可使用氦、氬 、氖、或氙當作稀有氣體。可使用CF4、C2F6、 CF3CF = CF2、CC1F3及SF6當作全氟化氣體。 可就精於本技藝之人士所熟知並且適合本發明的電漿 - 10 - (8) 200414577 處理目的適當選擇處理氣體。例如，使用氮氣體、氮及氧 的混合物、氮及空氣的混合物、稀有氣體或氮及稀有氣體 的混合物較佳。就經濟觀點而言，氮、氮及氧的混合物、 氮及空氣的混合物更好。當去除抗蝕劑或蝕刻有機薄膜時 ，使用氧、臭氧、空氣、二氧化碳（co2)、蒸汽或氧化 氮（N20 )較佳。此外，當蝕刻矽時，連同諸如CF4等氟 基氣體或氯化氣體一起使用氮或稀有氣體是有效的。當還 φ原金屬氧化物時，可以使用諸如氫或氨等還原氣體。P 9 AC電力供應頻率在50 Hz到200 MHz的範圍較佳。 當頻率低於5 0 Hz時，有放電不穩定的可能。當頻率大於 2 00 MHz時，由於電漿相當大的溫度上升，所以可能發生 弧放電。頻率在1 kHz〜100MHz的範圍較佳，頻率在5 kHz〜100kHz的範圍更好。可就兩電極（401a, 401b)之 間的距離、電極的面積、及電漿轉換效率、及使用的電極 種類適當選擇施加的電壓。通常，電壓被調整在lkV〜 φ 4 0kV的範圍內。電壓低於]kV時幾乎不會產生電漿放電 ，而電壓大於40kV時可能破壞介電。較佳的電壓是在 2kV〜10kV的範圍內，而最好的電壓是在2kV〜8kV的範 圍內。當頻率及電壓各自被調整在5 kHz〜100MHz及 2kV〜10kV的範圍內時，就不需要符合施加較高頻率及電 壓的阻抗，使得可達成裝置的簡化及經濟利益。並不特別 限制交流電供應（4 0 7 )產生的波形，可使用脈衝波及正 弦波。 在電漿處理期間，電極（401a，401b)的表面溫度維 -11 - 200414577 Ο) 持在2 5 0 °C或更低，尤其是2 〇 0 °C或更低較佳。當電極溫 度大於2 5 0 °C時，可能出現弧放電。儘管當溫度被維持在 室溫下時需要額外的冷卻，但是關於電極溫度的下限値並 無限制。藉由在電極（401a，40 1b)四周裝設散熱器（ 4〇4a5 4 04b )執行電極（401a，401b)的表面冷卻。雖然 並未特別限制下電極（4 0 1 b )的散熱器（4 0 4 b )形狀，但 是下電極（4 0 1 b )的散熱器（4 0 4 b )形狀必須根據出口（ H 406 )的形狀加以界定。尤其是，下電極（401b )的散熱 器（4(Mb)形狀需具有不可妨礙電漿經由下電極（40 1b) 流出的形狀。藉由空氣、水、或冷卻劑的循環可執行電極 (40 1 a5 4 0 1 b )的表面冷卻。對低電力而言，空氣循環較 佳，對高電力而言，水或冷卻劑循環較佳。雖然上電極（ 401a)及下電極（401b)的散熱器（ 404a，404b)可獨立 冷卻，但是利用連接管（未圖示）連接散熱器（404a， 404b)較佳。而且，當施加低電力時可不需要下電極（ • 401b)的散熱器（404b)。 以介電（403 a，403b)使上電極（401〇及下電極（ 401b)絕緣。雖然圖3及4使用兩介電（403a5 403b)， 但是可只用一介電使上電極（401a)及下電極（401b)絕 緣，此爲精於本技藝之人士所知的。介電（4〇3a，403b) 由具有2 0 0 0或更少的介電常數之絕緣材料製成較佳，但 並不侷限於此。例如，可使用MgF2、CaF2、LiF、攀土 、玻璃、及陶瓷等。尤其是，使用氧化鎂保持穩定性較佳 。例如，可以藉由備製諸如礬土等陶瓷粉末及少量（〇 . 〇 } -12- (10) 200414577 〜5 ν ο 1 % )氧化鎂的混合物並且燒結該混合物產生燒結本 體，使用該燒結本體當作含氧化鎂的介電材料。作爲另_ 選擇例子藉由以濺射、電子束澱積、或熱噴塗加以塗層 MgO薄膜在諸如礬土或石英等介電基底表面上可備製含 氧化鎂的介電材料。介電（ 403a，403b)的厚度在〇.1〜2 m m範圍內較佳。當厚度小於0 · 1 m m時，會降低介電層 的可承受的電壓。此外，可能發生破裂或剝落，使得難以 H保持均勻的輝光放電。當厚度大於2 mm時，承受的電壓 會過度增加。 可藉由諸如電極材料的熔化結合、陶瓷噴塗、或化學 或物理汽相澱積等已知技術完成電（4 0 3 a，4 0 3 b )及電極 (4 0 1 a 5 4 0 1 b )之間的連接。 儘管在連接介電（403b)到下電極（401b)之後，藉 由切掉特定區將出口（406)形成在下電極（401b)上， 但是澱積或噴塗介電材料（如，銅、銀、鋁、金、鉑、鈀 φ 、鉬、鎢、或其合金等）在已藉由切掉特定區形成出口（ 4 0 6 )的介電上較佳。 根據本發明的表面處理裝置可修正成各種形式。例如 ，圖4的電極結構能夠以平行結構彼此連接。而且，可藉 由裝設溫度計量測電極的表面溫度、裝設監視器顯示被量 測的電極溫度、及裝設控制器控制表面溫度等加以控制電 極的表面溫度。有關此種修正，請參照U S 6 5 4 2 4 5 0 9 1。藉 由如U S 5，1 8 5 5 1 3 2所示一般，在處理氣體儲存部分內裝 設流量均勻器或多孔板可達成更一致的處理氣體供應。 -13- (11) 200414577 根據本發明的表面處理裝置可用於去除基底表面諸如 有機物質等污染、剝除抗蝕劑、增加有機薄膜的黏附力、 表面修正、薄膜形成、還原金屬氧化物、或淸洗液晶用玻 璃基底、蝕刻氧化物薄膜、或蝕刻矽酮或金屬等例如，可 用於淸洗PCB (多氯聯苯）條及引線框的淸洗、TFT-LCD (薄膜電晶體液晶顯示器）使用的大型玻璃之預先淸洗、 及剝除充滿於TFT-LCD使用的大型玻璃上之抗蝕劑。而 φ且，可用於半導體製造處理的所有包裝步驟，諸如黏接、 模製、焊接、晶片裝附、浸泡、及標示處理等。而且，可 用於去除半導體的金屬氧化物材料、形成親水表面、或形 成防水表面。 根據本發明的表面處理裝置可以在大氣壓力下連續處 理基底表面。換言之，可用於藉由移動與根據本發明之表 面處理裝置有關的基底連續處理。 雖然根據本發明的表面處理裝置之上電極及下電極是 φ 平板型電極，但是該裝置解決習知平板電極結構所導致的 有效處理面積寬度窄小的問題，及解決由於圓柱形電極結 構所導致的電漿放電空間減少的問題。此外，該裝置並不 限制基底形狀並且能夠在大氣壓力下以連續方式處理基底 表面。 【圖式簡單說明】 圖1 a爲具有平板電極結構的習知表面處理裝置之立 體圖。 -14 - (12) 200414577 圖1 b爲圖1 a的裝置所使用之電極結構的橫剖面圖。 圖2爲具有圓柱形電極結構的習知表面處理裝置所使 用之電極結構的橫剖面圖。 圖3爲根據本發明的表面處理裝置之橫剖面圖。 圖4 a及4 b爲圖3的表面處理裝置所使用之電極結構 的較佳實施例之立體圖。 鲁主要元件對照表 10 1a 平板電極 10 1b 平板電極 1 02 電獎產生空間 103 入□ 104 出口 1〇5 基底 106a 介電 φ l〇6b 介電 2 0 1a 圓柱形電極 2 0 1b 圓柱形電極 2〇2a 介電 2〇2b 介電 2〇3 電漿 2〇4 基底 300 3 0 1a 處理氣體儲存部分 第一入口 -15- (13) (13)200414577 3 0 1b 第一入口 4 0 0 電漿產生部分 401a 平板上電極 40 1b 平板下電極 4 02 電漿產生空間 403a 介電 403b 介電 φ 404a 散熱器 404b 散熱器 40 5 a 第二入口 405b 第二入口 406 出□ 406a 出口 406b 出□ 406c 出□ • 406d 出□ 4 0 6 e 出□ 407 交流電供應 408 基底The process gas is first introduced into the process gas storage section (300) through a first inlet (301a 5 3 0 1 b) installed on a side wall of the process gas storage section (3 00). The introduced process gas is then supplied to the plasma generation space (402) via a second inlet (405a, 40b) located on the dielectric (403a), where it is supplied by an alternating current supply (407) The AC voltage helps convert it into a plasma. The plasma and the remaining unconverted processing gas are discharged to the outside of the plasma generation space (402) through an outlet (406) on the lower electrode (401b) to contact the surface of the substrate (408) to be processed. FIG. 4a is a perspective view of an electrode structure used in the surface treatment apparatus of FIG. 3. FIG. As described above, the electrode structure includes an upper plate electrode (401a) and a lower plate electrode (401b) facing each other, a plasma generating space (402) formed between the electrodes (401a, 401b), and an electrode (401a, 401b). Dielectric insulation (403 a, 403b). A second inlet (405a, 405b) is formed on the dielectric (403a), and the processing gas is supplied from the processing gas storage part (300) to the plasma generation space (402) through the second inlet (405a, 405b). The AC gas supplied by the AC power supply converts the processing gas introduced into the plasma generating space (4 02) into a plasma. The generated plasma and the remaining processing gas that has not been converted into a plasma are discharged to the outside of the plasma generation space (402) through the outlets (406a to 406b, “406”) formed on the lower electrode (4 0 1 b), and then The plasma contacts the surface of the substrate (408) and processes it. In this embodiment, the total processing width (D1 + D2 + D3 + D4 + D5) of the outlet (4 06) is significantly larger than the processing width (W) of the conventional flat electrode structure, thereby greatly increasing the processing width. The base may be wide. Moreover, another advantage of the present invention is that although the processing width (W) is very limited by the supply voltage, the length of the electrode (D) is not significantly affected. In other words, although the processing width (W) is typically limited to 0 · 0 1 m ~ 3 0 m by the supply voltage, the length of the electrode (D) is hardly affected by the voltage, so that its length can be fully increased □. As a result, the total processing width (D1 + D2 + D3 + D4 + D5) can also be significantly increased. In addition, according to the conventional example, it is difficult to change the shape of the outlet because many modifications of the device are required. According to the present invention, the shape of the outlet (406) may be variously changed in a circle, a triangle, an oval, or any other shape, and there is no need to change any part of the device except the heat sink. Therefore, there is an advantage that the shape of the outlet (4 0 6) can be changed according to the shape of the substrate (4 0 8) being processed. Fig. 4b illustrates such an exemplary embodiment where the outlet is formed with a plurality of holes. Moreover, although the second entrance (405a, 405b) is located on both edges of the dielectric (4 03a) in FIG. 4a, it is obvious that the second entrance φ may be located in the total of the plasma generating space (402). Volume of dielectric (403a) on all four edges. The present invention does not particularly limit the kind of processing gas for plasma generation, and a wide range of processing gases generally used in this field can be used. For example, nitrogen, oxygen, rare gas, carbon dioxide, nitrogen oxide, perfluorinated gas, hydrogen, ammonia, chloride gas, ozone, or a mixture thereof can be used. As a rare gas, helium, argon, neon, or xenon can be used. CF4, C2F6, CF3CF = CF2, CC1F3 and SF6 can be used as perfluorinated gases. The plasma may be appropriately selected for the purpose of the plasma which is well known to those skilled in the art and suitable for the present invention. (8) 200414577 For example, a nitrogen gas, a mixture of nitrogen and oxygen, a mixture of nitrogen and air, a rare gas or a mixture of nitrogen and a rare gas are preferably used. From an economic standpoint, nitrogen, a mixture of nitrogen and oxygen, and a mixture of nitrogen and air are better. When removing the resist or etching an organic thin film, it is preferable to use oxygen, ozone, air, carbon dioxide (co2), steam, or nitrogen oxide (N20). In addition, when etching silicon, it is effective to use nitrogen or a rare gas together with a fluorine-based gas such as CF4 or a chlorinated gas. When reducing the original metal oxide, a reducing gas such as hydrogen or ammonia can be used. The P 9 AC power supply frequency is preferably in the range of 50 Hz to 200 MHz. When the frequency is lower than 50 Hz, the discharge may be unstable. At frequencies above 200 MHz, arc discharge may occur due to the considerable temperature rise of the plasma. The frequency is preferably in the range of 1 kHz to 100 MHz, and the frequency is better in the range of 5 kHz to 100 kHz. The voltage to be applied can be appropriately selected in terms of the distance between the two electrodes (401a, 401b), the area of the electrodes, the plasma conversion efficiency, and the type of electrode used. Usually, the voltage is adjusted in the range of lkV to φ 4 0kV. Plasma discharge is hardly generated when the voltage is lower than kV, and the dielectric may be destroyed when the voltage is higher than 40kV. The preferred voltage is in the range of 2kV ~ 10kV, and the best voltage is in the range of 2kV ~ 8kV. When the frequency and voltage are adjusted within the range of 5 kHz to 100 MHz and 2 kV to 10 kV, respectively, it is not necessary to comply with the impedance of applying a higher frequency and voltage, so that the device can be simplified and economic benefits can be achieved. The waveform generated by the AC power supply (407) is not particularly limited, and pulse waves and sine waves can be used. During the plasma treatment, the surface temperature of the electrodes (401a, 401b) (-11-200414577 0) is maintained at 250 ° C or lower, especially 2000 ° C or lower is preferred. When the electrode temperature is greater than 250 ° C, arc discharge may occur. Although additional cooling is required when the temperature is maintained at room temperature, there is no limit on the lower limit of the electrode temperature. Surface cooling of the electrodes (401a, 401b) is performed by installing a heat sink (404a5 4 04b) around the electrodes (401a, 401b). Although the shape of the heat sink (4 0 4 b) of the lower electrode (4 0 1 b) is not particularly limited, the shape of the heat sink (4 0 4 b) of the lower electrode (4 0 1 b) must be according to the outlet (H 406) To define the shape. In particular, the shape of the heat sink (4 (Mb) of the lower electrode (401b) needs to have a shape that does not prevent the plasma from flowing out through the lower electrode (40 1b). The electrode (40 can be performed by circulation of air, water, or coolant) 1 a5 4 0 1 b) surface cooling. For low power, air circulation is better, for high power, water or coolant circulation is better. Although the heat dissipation of the upper electrode (401a) and the lower electrode (401b) (404a, 404b) can be independently cooled, but it is better to use a connecting pipe (not shown) to connect to the radiator (404a, 404b). Moreover, when low power is applied, the radiator (404b) of the lower electrode (401b) may not be needed ). Insulate the upper electrode (4010 and lower electrode (401b) with dielectrics (403a, 403b). Although two dielectrics (403a5 403b) are used in Figures 3 and 4, the upper electrode (403a5, 403b) can be used with only one dielectric ( 401a) and lower electrode (401b) insulation, which is known to those skilled in the art. Dielectric (403a, 403b) is made of an insulating material with a dielectric constant of 2000 or less than For example, MgF2, CaF2, LiF, soil climbing, glass, and ceramics can be used. In particular, the use of magnesium oxide maintains better stability. For example, a mixture of ceramic powder such as alumina and a small amount of (〇. 〇) -12- (10) 200414577 ~ 5 ν ο 1% can be prepared. And sintering the mixture produces a sintered body, using the sintered body as a magnesium oxide-containing dielectric material. As another alternative example, a MgO film is coated on, for example, alumina by sputtering, electron beam deposition, or thermal spraying. A dielectric material containing magnesium oxide can be prepared on the surface of a dielectric substrate such as quartz or quartz. The thickness of the dielectric (403a, 403b) is preferably in the range of 0.1 to 2 mm. When the thickness is less than 0 · 1 mm, it will Reduce the withstand voltage of the dielectric layer. In addition, cracking or peeling may occur, making it difficult to maintain a uniform glow discharge. When the thickness is greater than 2 mm, the withstand voltage may be excessively increased. It can be combined by, for example, melting of electrode materials , Ceramic spraying, or chemical or physical vapor deposition, are known to complete the connection between electricity (4 0 3 a, 4 0 3 b) and electrodes (4 0 1 a 5 4 0 1 b). After the dielectric (403b) reaches the lower electrode (401b), borrow An outlet (406) is formed on the lower electrode (401b) by cutting out a specific area, but a dielectric material (such as copper, silver, aluminum, gold, platinum, palladium φ, molybdenum, tungsten, or an alloy thereof) is deposited or sprayed. ) Dielectrics that have been formed by cutting out a specific region of the outlet (406) are preferred. The surface treatment device according to the present invention can be modified into various forms. For example, the electrode structure of FIG. 4 can be connected to each other in a parallel structure. Furthermore, the surface temperature of the electrode can be controlled by installing a temperature measurement electrode surface temperature, installing a monitor to display the measured electrode temperature, and installing a controller to control the surface temperature. Please refer to US 6 5 4 2 4 5 0 9 1 for this correction. As shown in U S 5, 1 8 5 5 1 32, a more uniform process gas supply can be achieved by installing a flow equalizer or perforated plate in the process gas storage section. -13- (11) 200414577 The surface treatment device according to the present invention can be used to remove contamination such as organic substances on the substrate surface, strip resist, increase the adhesion of organic thin films, surface correction, film formation, reduction of metal oxides, or Cleaning of glass substrates for liquid crystals, etching of oxide films, or etching of silicones or metals, for example, cleaning of PCB (polychlorinated biphenyl) strips and lead frames, TFT-LCD (thin film transistor liquid crystal display) The large glass used is cleaned in advance, and the resist filled on the large glass used in the TFT-LCD is stripped. And φ, can be used in all packaging steps of semiconductor manufacturing processes, such as bonding, molding, soldering, wafer mounting, dipping, and labeling. Moreover, it can be used to remove metal oxide materials from semiconductors, form hydrophilic surfaces, or form waterproof surfaces. The surface treatment apparatus according to the present invention can continuously treat the surface of a substrate under atmospheric pressure. In other words, it can be used for continuous processing of substrates related to the surface processing apparatus according to the present invention by moving. Although the upper electrode and the lower electrode of the surface treatment device according to the present invention are φ flat-plate electrodes, the device solves the problem of a narrow effective processing area width caused by the conventional flat electrode structure, and solves the problem caused by the cylindrical electrode structure. The problem of reduced plasma discharge space. In addition, the device does not limit the shape of the substrate and is capable of treating the surface of the substrate in a continuous manner under atmospheric pressure. [Brief description of the drawings] Fig. 1a is a perspective view of a conventional surface treatment device having a flat electrode structure. -14-(12) 200414577 Figure 1b is a cross-sectional view of the electrode structure used in the device of Figure 1a. Fig. 2 is a cross-sectional view of an electrode structure used in a conventional surface treatment apparatus having a cylindrical electrode structure. Fig. 3 is a cross-sectional view of a surface treatment apparatus according to the present invention. 4a and 4b are perspective views of a preferred embodiment of an electrode structure used in the surface treatment apparatus of FIG. Lu's main component comparison table 10 1a flat electrode 10 1b flat electrode 1 02 electricity award generation space 103 into □ 104 exit 1 05 substrate 106a dielectric φ l〇6b dielectric 2 0 1a cylindrical electrode 2 0 1b cylindrical electrode 2 〇2a Dielectric 2〇2b Dielectric 2 03 Plasma 2 04 Substrate 300 3 0 1a First inlet of the processing gas storage part -15- (13) (13) 200414577 3 0 1b First inlet 4 0 0 Plasma Generating part 401a Flat top electrode 40 1b Flat bottom electrode 4 02 Plasma generating space 403a Dielectric 403b Dielectric φ 404a Radiator 404b Radiator 40 5 a Second inlet 405b Second inlet 406 Out □ 406a Outlet 406b Out □ 406c Out □ • 406d output □ 4 0 6 e output □ 407 AC power supply 408 substrate