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TW369720B - Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory - Google Patents
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TW369720B - Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory - Google Patents

Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory

Info

Publication number
TW369720B
TW369720B TW085101291A TW85101291A TW369720B TW 369720 B TW369720 B TW 369720B TW 085101291 A TW085101291 A TW 085101291A TW 85101291 A TW85101291 A TW 85101291A TW 369720 B TW369720 B TW 369720B
Authority
TW
Taiwan
Prior art keywords
gate type
type transistor
split gate
gate
making
Prior art date
Application number
TW085101291A
Other languages
Chinese (zh)
Inventor
Kenji Fukase
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP08008581A external-priority patent/JP3133667B2/en
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of TW369720B publication Critical patent/TW369720B/en

Links

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

This invention aims to seek the high integration of split gate type flash EEPROM by forming a source electrode area 3, a drain electrode area 4 on the substrate, and a floating gate 8 is formed by oxide film 6 on the channel region 5 sandwiched between the source electrode 3 and drain electrode 4. A control gate 9 is formed on the floating gate 8 via oxide film 7. A part of the control gate 9 constructs the selection gate 10 arranged on channel region 5 via oxide films 6 and 7. A selection transistor 11 is constructed by selection gate 10 which is constructed by side walls 12 and 13 of floating gate 8 and side of oxide 7, as well as the part 14 that covers the side walls 12 and 13.
TW085101291A 1996-01-22 1996-02-02 Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory TW369720B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08008581A JP3133667B2 (en) 1995-02-23 1996-01-22 Split gate transistor, method of manufacturing split gate transistor, and nonvolatile semiconductor memory

Publications (1)

Publication Number Publication Date
TW369720B true TW369720B (en) 1999-09-11

Family

ID=57941444

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085101291A TW369720B (en) 1996-01-22 1996-02-02 Split gate type transistor, method for making a split gate type transistor, and a non-volatile semiconductor memory

Country Status (1)

Country Link
TW (1) TW369720B (en)

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