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US8318253B2 - Imprint lithography - Google Patents
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US8318253B2 - Imprint lithography - Google Patents

Imprint lithography Download PDF

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US8318253B2
US8318253B2 US11/478,305 US47830506A US8318253B2 US 8318253 B2 US8318253 B2 US 8318253B2 US 47830506 A US47830506 A US 47830506A US 8318253 B2 US8318253 B2 US 8318253B2
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gel
template
imprint template
imprint
sol
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US20080011934A1 (en
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Marcus Antonius Verschuuren
Sander Frederik Wuister
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Koninklijke Philips NV
ASML Netherlands BV
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ASML Netherlands BV
Koninklijke Philips Electronics NV
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Priority to JP2007164950A priority patent/JP4842216B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/56—Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/60—Releasing, lubricating or separating agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
    • B29C33/3857—Manufacturing moulds, e.g. shaping the mould surface by machining by making impressions of one or more parts of models, e.g. shaped articles and including possible subsequent assembly of the parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/40—Plastics, e.g. foam or rubber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2083/00—Use of polymers having silicon, with or without sulfur, nitrogen, oxygen, or carbon only, in the main chain, as moulding material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/756—Microarticles, nanoarticles

Definitions

  • the present invention relates to imprint lithography.
  • a lithographic apparatus is a machine that applies a desired pattern onto a target portion of a substrate.
  • Lithographic apparatus are conventionally used, for example, in the manufacture of integrated circuits (ICs), flat panel displays and other devices involving fine structures.
  • An alternative for printing sub-100 nm features comprises transferring a pattern to a substrate by imprinting a pattern into an imprintable medium using a physical mould or template.
  • the imprintable medium may be the substrate or a material coated on to a surface of the substrate.
  • the imprintable medium may be functional or may be used as a “mask” to transfer a pattern to an underlying surface.
  • the imprintable medium may for instance be provided as a resist deposited on a substrate such as a semiconductor material to which the pattern defined by the template is to be transferred.
  • Imprint lithography is thus essentially a moulding process on a micrometer or nanometer scale in which the topography of a template defines the patterns created on a substrate. Patterns may be layered as with optical lithography processes so that in principle imprint lithography could be used for such applications as IC manufacture.
  • imprint lithography is largely limited only by the resolution of the template fabrication process.
  • imprint lithography has been used to produce features in the sub-50 nm range with significantly improved resolution and line edge roughness compared to that achievable with conventional optical lithography processes.
  • imprint processes do not require expensive optics, advanced illumination sources or specialised resist materials typically required by optical lithography processes.
  • Imprint lithography templates are conventionally manufactured using e-beam lithography. This is an expensive and time consuming process.
  • a method of making an imprint lithography template comprising applying a curable material to a patterned surface of a master imprint template; curing the curable material and thereby forming a second imprint template having a patterned surface which is the inverse of the patterned surface of the master imprint template; removing the second imprint template from the master imprint template; applying inorganic sol-gel to a substrate; imprinting the inorganic sol-gel with the second imprint template; allowing the inorganic sol-gel to cure; and removing the second imprint template from the cured inorganic sol-gel, such that the inorganic sol-gel forms a third imprint template having a patterned surface which corresponds with the patterned surface of the master imprint template.
  • a method of making an imprint lithography template comprises applying a curable material to a patterned surface of a master imprint template; curing the curable material and thereby forming a second imprint template having a patterned surface which is the inverse of the patterned surface of the master imprint template; removing the second imprint template from the master imprint template; applying inorganic sol-gel to the patterned surface of the second imprint template; bringing a substrate into contact with the inorganic sol-gel; allowing the inorganic sol-gel to cure; and removing the second imprint template from the cured inorganic sol-gel, such that the inorganic sol-gel forms a third imprint template having a patterned surface which corresponds with the patterned surface of the master imprint template.
  • an imprint template comprising a substrate and cured inorganic sol-gel bearing a pattern.
  • FIG. 1 a - 1 c illustrate examples of conventional ‘printing’, hot and UV lithography processes respectively;
  • FIG. 2 illustrates a two step etching process employed when hot and UV imprint lithography is used to pattern a resist layer
  • FIG. 3 illustrates a template and an imprintable resist layer deposited on a substrate
  • FIGS. 4 and 5 illustrate methods of making an imprint lithography template.
  • imprint lithography There are two principal approaches to imprint lithography which will be termed generally as hot imprint lithography and UV imprint lithography. There is also a third type of imprint lithography which may be referred to as “printing” lithography. Examples of these are illustrated in FIGS. 1 a to 1 c.
  • FIG. 1 a shows a printing lithography process, known as micro-contact printing, which involves transferring a layer of molecules 11 (typically an ink such as a thiol) from a flexible template 10 (typically fabricated from polydimethylsiloxane (PDMS) onto a resist layer 13 which is supported upon a substrate 12 and planarisation and transfer layer 12 ′.
  • the template 10 has a pattern of features on its surface, the molecular layer being disposed upon the features.
  • the layer of molecules 11 stick to the resist.
  • the residual layer of resist is etched such that the areas of the resist not covered by the transferred molecular layer are etched down to the substrate.
  • Printing lithography is an example of soft imprint lithography.
  • the term ‘soft imprint lithography’ is generally used to mean imprint lithography in which the imprint template is elastically deformable.
  • soft imprint lithography may not provide overlay accuracy on a nanometer scale.
  • Hot imprint lithography is also known as nanoimprint lithography (NIL) when used on a nanometer scale.
  • NIL nanoimprint lithography
  • the process uses harder templates made from, for example, silicon or nickel, which are more resistant to wear and deformation. This is described for instance in U.S. Pat. Nos. 4,731,155 and 5,772,905, and illustrated in FIG. 1 b .
  • a solid template 14 is imprinted into a thermosetting or a thermoplastic polymer resin 15 , which has been cast on the surface of a substrate 12 .
  • the resin may for instance be spin coated and baked onto the substrate surface or more typically (as in the example illustrated) onto a planarisation and transfer layer 12 ′.
  • hard when describing an imprint template includes materials which may generally be considered between “hard” and “soft” materials, such as for example “hard” rubber. The suitability of a particular material for use as an imprint template is determined by its application requirements.
  • thermosetting polymer resin When a thermosetting polymer resin is used the resin is heated to a temperature such that, upon contact with the template, the resin is sufficiently flowable to flow into the pattern features defined on the template. The temperature of the resin is then increased to thermally cure (e.g. crosslink) the resin so that it solidifies and irreversibly adopts the desired pattern. The template may then be removed and the patterned resin cooled.
  • thermally cure e.g. crosslink
  • thermoplastic polymer resins used in hot imprint lithography processes are poly (methyl methacrylate), polystyrene, poly (benzyl methacrylate) or poly (cyclohexyl methacrylate).
  • the thermoplastic resin is heated so that it is in a freely flowable state immediately prior to imprinting with the template. It is typically necessary to heat thermoplastic resins to temperatures considerably above the glass transition temperature of the resin.
  • the template is pressed into the flowable resin and sufficient pressure is applied to ensure the resin flows into all the pattern features defined on the template.
  • the resin is then cooled to below its glass transition temperature with the template in place whereupon the resin irreversibly adopts the desired pattern.
  • the pattern will consist of the features in relief from a residual layer of the resin which may then be removed by an appropriate etch process to leave only the pattern features.
  • FIGS. 2 a to 2 c Upon removal of the template from the solidified resin, a two-step etching process is performed as illustrated in FIGS. 2 a to 2 c .
  • the substrate 20 has a planarisation and transfer layer 21 immediately upon it, as shown in FIG. 2 a .
  • the purpose of the planarisation and transfer layer is twofold. It acts to provide a surface parallel to that of the template, which is important to ensure that the contact between the template and the resin is parallel, and also to improve the aspect ratio of the printed features, as will be described below.
  • a residual layer 22 of the solidified resin is left on the planarisation and transfer layer, shaped in the desired pattern.
  • the first etch removes parts of the residual layer.
  • the first etch is preferably anisotropic. In some instances the first etch may be isotropic, resulting in a poor aspect ratio of features where L 1 is the height of the features 23 , as shown in FIG. 2 b .
  • the second etch which is anisotropic (or selective), improves the aspect ratio.
  • the anisotropic etch removes those parts of the planarisation and transfer layer which are not covered by the solidified resin, increasing the aspect ratio of the features 23 to (L 2 /D), as shown in FIG. 2 c .
  • the resulting polymer thickness contrast left on the substrate after etching can be used as for instance a mask for dry etching if the imprinted polymer is sufficiently resistant, for instance as a step in a lift-off process.
  • Hot imprint lithography suffers from a disadvantage in that not only is the pattern transfer be performed at a higher temperature, but also relatively large temperature differentials might be required in order to ensure the resin is adequately solidified before the template is removed. Temperature differentials between 35 and 100° C. are known from literature. Differential thermal expansion between for instance the substrate and template can then lead to distortion in the transferred pattern. The problem is exacerbated by the relatively high pressures used for the imprinting step, due the viscous nature of the imprintable materials, which can induce mechanical deformation in the substrate, again distorting the pattern.
  • UV imprint lithography does not involve such high temperatures and temperature changes. Nor does it require such viscous imprintable materials. Rather UV imprint lithography involves the use of a transparent template and a UV-curable liquid, typically a monomer such as an acrylate or methacrylate for example. In general any photopolymerisable material could be used, such as a mixture of monomers and an initiator.
  • the curable liquid may also for instance include a dimethyl siloxane derivative.
  • Such materials are much less viscous than the thermosetting and thermoplastic resins used in hot imprint lithography and consequently move much faster to fill template pattern features. Low temperature and low pressure operation also favours higher throughput capabilities.
  • UV imprint lithography implies that UV light is always used, it should be appreciated that any suitable actinic radiation may be used (for example visible light may be used). Hence, any reference in this document to UV imprint lithography, UV light, or UV curable materials, etc should be interpreted as including any suitable actinic radiation, and should not be interpreted as being limited to UV light only.
  • FIG. 1 c An example of a UV imprint process is illustrated in FIG. 1 c .
  • a quartz template 16 is applied to a UV-curable resin 17 in a similar manner to the process of FIG. 1 b .
  • UV light is applied to the resin through the quartz template in order to polymerise and thus cure it.
  • the remaining steps of etching the residual layer of resist are the same as for the hot embossing process described above.
  • the UV curable resins typically used have a much lower viscosity than typical thermoplastic resins so that lower imprint pressures are used.
  • UV imprint lithography better suited to application requiring high overlay accuracy.
  • transparent nature of UV imprint templates can accommodate optical alignment techniques simultaneously to the imprint.
  • UV imprint lithography mainly uses UV curable materials, and is thus generically referred to as UV imprint lithography
  • other wavelengths of light may be used to cure appropriately selected materials (e.g. activate a polymerisation or cross linking reaction).
  • any radiation capable of initiating such a chemical reaction may be used if an appropriate imprintable material is available.
  • Alternative “activating light” may for instance include visible light, infrared light, x-ray radiation and electron beam radiation.
  • references to UV imprint lithography and use of UV light are not intended to exclude these and other activating light possibilities.
  • roller imprint systems As an alternative to imprint systems using a planar template which is maintained substantially parallel to the substrate surface, roller imprint systems have been developed. Both hot and UV roller imprint systems have been proposed in which the template is formed on a roller but otherwise the imprint process is very similar to imprinting using a planar template. Unless the context requires otherwise, references to an imprint template include references to roller templates.
  • step and flash imprint lithography SFIL
  • step and flash imprint lithography This involves printing small areas of the substrate at a time by imprinting a template into a UV curable resin, ‘flashing’ UV light through the template to cure the resin beneath the template, removing the template, stepping to an adjacent region of the substrate and repeating the operation.
  • the small field size of such step and repeat processes minimises pattern distortions CD variations so that SFIL is particularly suited to manufacture of IC and other devices requiring high overlay accuracy.
  • UV curable resin can be applied to the entire substrate surface, for instance by spin coating, this is often problematic due to the volatile nature of UV curable resins.
  • FIG. 3 illustrates the relative dimensions of the template, imprintable material (curable monomer, thermosetting resin, thermoplastic etc) and substrate.
  • the ratio of the width of the substrate, D, to the thickness of the curable resin layer, t is of the order of 10 6 . It will be appreciated that, in order to avoid the features projecting from the template damaging the substrate, the dimension t should be greater than the depth of the projecting features on the template.
  • the residual layer left after stamping is useful in protecting the underlying substrate, but as mentioned above it is also the source of a number of problems particularly when high resolution and/or overlay accuracy is desired.
  • the first ‘breakthrough’ etch may be anisotropic or isotropic. If the first etch is isotropic this will to some extent erode the features imprinted as well as the residual layer. This is exacerbated if the residual layer is overly thick and/or uneven.
  • This problem can for instance lead to variation in the thickness of lines ultimately formed in the underlying substrate (i.e. variation in the critical dimension).
  • the uniformity of the thickness of a line that is etched in the transfer layer in the second anisotropic etch is dependant upon the aspect ratio and integrity of the shape of the feature left in the resin. If the residual resin layer is uneven, then the non-selective first etch can leave some of these features with “rounded” tops so that they are not sufficiently well defined to ensure good uniformity of line thickness in the second and any subsequent etch process.
  • the above problem can be reduced by ensuring the residual layer is as thin as possible but this can require application of undesirably large pressures (increasing substrate deformation) and relatively long imprinting times (reducing throughput).
  • the template is a significant component of the imprint lithography system. As noted above, the resolution of the features on the template surface is a limiting factor on the attainable resolution of features printed on the substrate.
  • the templates used for hot and UV lithography are generally formed in a two-stage process. Initially, the desired pattern is written using, for example, electron beam writing, to give a high resolution pattern in resist. The resist pattern is then transferred into a thin layer of chrome which forms the mask for the final, anisotropic etch step to transfer the pattern into the base material of the template.
  • the release characteristics of the template may also be an important consideration.
  • the template may for instance be treated with a surface treatment material to form a thin release layer on the template having a low surface energy (a thin release layer may also be deposited on the substrate).
  • the template is subjected to large forces during stamping of the resist, and in the case of hot lithography, it is also subjected to extremes of pressure and temperature. This will cause wearing of the template, and may adversely affect the shape of the pattern imprinted upon the substrate.
  • the imprintable material may itself be a functional material, for instance having a functionally such as conductivity, optical linear or non linear response amongst others.
  • the functional material may form a conductive layer, a semiconductive layer, a dielectric layer or a layer having another desirable mechanical, electrical or optical property.
  • Some organic substances may also be appropriate functional materials. Such applications may be within the scope of an embodiment of the present invention.
  • FIG. 4 shows schematically a method of making an imprint lithography template according to an embodiment of the invention.
  • conventional e-beam lithography is used to make a master imprint template 100 in a conventional manner (described further above).
  • the master imprint template 100 may be made of Si or SiO 2 (e.g. quartz).
  • a release layer 102 is provided on a patterned upper surface of the master imprint template 100 .
  • the release layer 102 may be a monolayer of a fluorinated compound, for example fluorinated silane.
  • a layer of curable material 104 e.g. polydimethylsiloxane (PDMS) is applied onto the patterned upper surface of the master imprint template 100 .
  • the curable material 104 is a liquid, and the layer is sufficiently thick that recesses of the pattern on the master imprint template 100 are filled and the PDMS forms a continuous surface over the imprint template.
  • the curable material 104 is then cured, for example by placing it in an oven at a predetermined temperature. Curing of curable materials, e.g. curable PDMS, is not explained in detail here as it is well understood to those skilled in the art.
  • a carrier substrate 106 is provided with an adhesive monolayer (not shown) on its lowermost surface, and is then brought into contact with the cured PDMS 104 .
  • the carrier substrate 106 may for example be made from quartz.
  • the adhesive monolayer secures the cured PDMS 104 to the carrier substrate 106 . It is not necessary that the PDMS 104 be cured when the carrier substrate 106 is brought into contact with it. The substrate may be brought into contact with the PDMS before it is cured, and held in position until curing has taken place.
  • the carrier substrate 106 and cured PDMS 104 are removed from the master imprint template 100 .
  • the lowermost surface of the cured PDMS has a pattern which is the inverse of the pattern in the master imprint template 100 .
  • the cured PDMS 104 and the carrier substrate 106 are referred to as the second imprint template 108 (the master imprint template 100 is considered to be the first imprint template).
  • a substrate 110 e.g. a quartz substrate, which will form part of an imprint template is provided.
  • the (quartz) substrate 110 may be provided on its upper surface with a layer of chromium (not shown) or other material to form a transfer layer. It is not essential that a transfer layer is provided.
  • a layer of sol-gel 112 is spin-coated onto the quartz substrate 110 .
  • the layer of sol-gel 112 may be spin-coated onto the substrate 110 with good thickness uniformity, for example to within around 0.1 nanometers over an area of several square centimeters.
  • the sol-gel is inorganic.
  • An example of a sol-gel which could be used is the sol-gel known as spin-on-glass silica.
  • the solvent included in this sol-gel is ethanol.
  • the sol-gel is liquid when it is spin coated onto the substrate, and then becomes a gel as solvent evaporates out of it (i.e. the sol-gel begins to cure).
  • Other suitable sol-gels include, but are not limited to, (with an appropriate solvent) titanium oxide, hafnium oxide, zirconium oxide, tin oxide, zinc oxide, and germanium oxide.
  • the second imprint template 108 is imprinted into the sol-gel 112 .
  • the sol-gel 112 continues to cure. This happens in part because the solvent in the sol-gel 112 diffuses into the PDMS 104 of the second imprint template 108 . As the solvent leaves the sol-gel 112 increasing numbers of condensation reactions and cross linking occur within the sol-gel, and it thereby becomes more and more solid. Water from the sol-gel 112 may also diffuse into the PDMS 104 (water is formed during condensation of sol-gel). Sufficient time is allowed to elapse for the sol-gel 112 to become solid (i.e. for the sol-gel to cross-linked to a sufficient degree that it will retain its shape).
  • the second imprint template 108 is removed, leaving behind a substrate 110 supporting a patterned layer of cured sol-gel 112 , the pattern being the same as the pattern on the master imprint template 100 .
  • an imprint template 114 formed from cured sol-gel 112 on a quartz substrate 110 which matches a master imprint template 100 , has been cheaply and conveniently fabricated.
  • the imprint template 114 which for ease of reference is referred to as the third imprint template, is sufficiently mechanically stable to allow it to be used in the same manner as a conventionally made imprint template.
  • the imprint template 114 may be fired by placing it in an oven at for example between 200° C. and 1000° C. Firing the imprint template in this way makes the cured sol-gel 112 less porous, thereby increasing its durability.
  • the cured sol-gel has substantially the same surface chemistry as fused silica, and the cured sol-gel 112 of the third imprint template 114 is therefore well matched to the quartz substrate 110 on which it is provided.
  • the thermal expansion coefficient of the cured sol-gel 112 is the same or very close to that of the quartz substrate 110 , with the result that any change in temperature will cause substantially the same amount of thermal expansion or contraction to take place in both the cured sol-gel and the quartz substrate. This is advantageous because it avoids stress and/or distortion of the imprint template pattern occurring due to temperature changes.
  • Sol-gel is transparent to UV radiation, and has good resistance to UV radiation, thereby making it useful for UV imprint lithography.
  • the embodiment of the invention uses PDMS to form the inverse imprint template 108
  • other suitable materials may be used.
  • the material ise elastically deformable.
  • the term ‘elastically deformable’ is intended to mean sufficiently deformable to aid release of the inverse imprint template 108 from the master imprint template 100 .
  • the material should not react with inorganic sol-gel, and should be permeable to sol-gel solvent.
  • inorganic sol-gel has several advantages over organic material.
  • organic material may suffer from creep, i.e. progressive shrinkage due to inherent tension within the material, leading to distortion of the pattern formed in the organic material.
  • Cured inorganic sol-gel has substantial resistance to creep.
  • Organic materials have a very different thermal expansion coefficient to fused silica or quartz, and this may lead to stresses and distortions at the interface between the quartz and the organic material in response to temperature changes.
  • cured inorganic sol-gel has a thermal expansion coefficient which is the same or virtually the same as fused silica or quartz.
  • Organic materials may suffer from degradation as a result of long term UV exposure.
  • cured inorganic sol-gel does not degrade when exposed to UV radiation.
  • Organic materials may delaminate from a quartz or fused silica substrate.
  • Cured inorganic sol-gel adheres well because it has similar materials characteristics to quartz or fused silica.
  • Organic materials are often soft and are not scratch resistant, resulting in increased susceptibility to damage.
  • Cured inorganic sol-gel is generally more durable. Also, often it is difficult to clean an imprint template formed from organic material, since it is generally difficult to remove organic resist from the organic imprint template without also removing part of the organic imprint template.
  • FIG. 5 shows an alternative embodiment of the invention.
  • a quartz substrate 210 supports a patterned layer of cured sol-gel 212 .
  • a chromium layer 211 (or other transfer layer) is provided between the substrate 210 and the cured sol-gel 212 .
  • the structure shown in FIG. 5 a may be formed using the method described above in relation to FIG. 4 .
  • etching is used to transfer the pattern of the cured sol-gel 212 into the quartz substrate 210 .
  • the quartz substrate may then be used as an imprint template.
  • a reactive ion etch (for example using a fluorine plasma) is used to etch through the residual sol-gel layer.
  • This is a breakthrough etch, i.e. it breaks through the sol-gel 212 and exposes the chromium 211 in recesses of the pattern.
  • a second reactive ion etch (for example using a chlorine or oxygen plasma) is used to etch through the chromium layer 211 . This is known as a transfer etch, and exposes the quartz 210 in recesses of the pattern.
  • a reactive ion etch (for example using fluorine plasma) is used to etch into the quartz 210 .
  • the chromium 211 is stripped away, for example using a wet-chemical chrome etch, to yield a quartz imprint template 214 .
  • the pattern provided on the quartz imprint template 214 corresponds with the pattern formed in the sol-gel layer 212 .
  • the method illustrated in FIG. 5 allows a quartz imprint template to be constructed in a low cost and convenient manner.
  • quartz substrates It will be appreciated that fused silica may be used instead of quartz. Substrates may also be formed from any other suitable material, for example silicon.
  • the invention allows many replicas to be made of a master imprint template, by imprinting sol-gel in the manner described above in relation to FIG. 4 and/or FIG. 5 a plurality of times. This reduces the cost of imprint lithography, especially in cases where a given pattern is to be used many times. For example, it may be desired to simultaneously imprint the same pattern onto a substrate in multiple, e.g. 5, different locations.
  • the invention allows the necessary multiple imprint templates to be cheaply and conveniently made. It may be desired to provide imprint templates in multiple imprint lithography machines, all of the imprint templates having the same pattern. The invention allows the multiple imprint templates to be cheaply and conveniently made.
  • the embodiments of the invention refer to providing sol-gel onto a substrate which is imprinted by cured PDMS, it will be appreciated that the invention may be implemented in other ways.
  • the sol-gel may be applied directly onto the cured PDMS (or equivalent material), a substrate subsequently being fixed to the sol-gel.
  • the sol-gel once cured, may then be lifted from the PDMS.

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US20110076351A1 (en) * 2009-09-29 2011-03-31 Asml Netherlands B.V. Imprint lithography
US9588422B2 (en) * 2009-09-29 2017-03-07 Asml Netherlands B.V. Imprint lithography

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