AU412258B2 - Insulated-gate field-effect transistor - Google Patents

Insulated-gate field-effect transistor

Info

Publication number: AU412258B2
Authority: AU; Australia
Prior art keywords: insulated; effect transistor; gate field; gate; field
Prior art date: 1966-03-28
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

AU19162/67A

Other versions

AU1916267A (en

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1966-03-28

Filing date

1967-03-20

Publication date

1968-09-26

1967-03-20 Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp

1968-09-26 Application granted granted Critical

1968-09-26 Publication of AU412258B2 publication Critical patent/AU412258B2/en

1968-09-26 Publication of AU1916267A publication Critical patent/AU1916267A/en

Status Expired legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1

AU19162/67A 1966-03-28 1967-03-20 Insulated-gate field-effect transistor Expired AU412258B2 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JPJP19828		1966-03-28

Publications (2)

Publication Number	Publication Date
AU412258B2 true AU412258B2 (en)	1968-09-26
AU1916267A AU1916267A (en)	1968-09-26

Family

ID=

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