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AU419791B2 - Method of making a switching element - Google Patents
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AU419791B2 - Method of making a switching element - Google Patents

Method of making a switching element

Info

Publication number
AU419791B2
AU419791B2 AU39452/68A AU3945268A AU419791B2 AU 419791 B2 AU419791 B2 AU 419791B2 AU 39452/68 A AU39452/68 A AU 39452/68A AU 3945268 A AU3945268 A AU 3945268A AU 419791 B2 AU419791 B2 AU 419791B2
Authority
AU
Australia
Prior art keywords
making
switching element
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU39452/68A
Other versions
AU3945268A (en
Inventor
AKIO YAMASHITA and TAKASHI FUJITA MASARU TANAKA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to AU39452/68A priority Critical patent/AU419791B2/en
Publication of AU3945268A publication Critical patent/AU3945268A/en
Application granted granted Critical
Publication of AU419791B2 publication Critical patent/AU419791B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
AU39452/68A 1968-06-20 1968-06-20 Method of making a switching element Expired AU419791B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU39452/68A AU419791B2 (en) 1968-06-20 1968-06-20 Method of making a switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AU39452/68A AU419791B2 (en) 1968-06-20 1968-06-20 Method of making a switching element

Publications (2)

Publication Number Publication Date
AU3945268A AU3945268A (en) 1970-02-05
AU419791B2 true AU419791B2 (en) 1971-12-15

Family

ID=3726490

Family Applications (1)

Application Number Title Priority Date Filing Date
AU39452/68A Expired AU419791B2 (en) 1968-06-20 1968-06-20 Method of making a switching element

Country Status (1)

Country Link
AU (1) AU419791B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
US6632730B1 (en) 1999-11-23 2003-10-14 Ebara Solar, Inc. Method for self-doping contacts to a semiconductor

Also Published As

Publication number Publication date
AU3945268A (en) 1970-02-05

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