AU466927B2 - Semiconductor device and method of making thesame - Google Patents
Semiconductor device and method of making thesameInfo
- Publication number
- AU466927B2 AU466927B2 AU50942/73A AU5094273A AU466927B2 AU 466927 B2 AU466927 B2 AU 466927B2 AU 50942/73 A AU50942/73 A AU 50942/73A AU 5094273 A AU5094273 A AU 5094273A AU 466927 B2 AU466927 B2 AU 466927B2
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor device
- making thesame
- thesame
- making
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2905—Silicon, silicon germanium or germanium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2921—Materials being crystalline insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3221—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
- H10P14/3222—Antimonides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
- H10P14/3231—Selenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3422—Antimonides
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21637672A | 1972-01-10 | 1972-01-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU5094273A AU5094273A (en) | 1974-07-11 |
| AU466927B2 true AU466927B2 (en) | 1975-11-13 |
Family
ID=22806816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU50942/73A Expired AU466927B2 (en) | 1972-01-10 | 1973-01-10 | Semiconductor device and method of making thesame |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5228634B2 (en) |
| AU (1) | AU466927B2 (en) |
| BE (1) | BE793800A (en) |
| CA (1) | CA973976A (en) |
| DE (1) | DE2300921A1 (en) |
| FR (1) | FR2167831B1 (en) |
| GB (1) | GB1417484A (en) |
| IT (1) | IT978097B (en) |
| NL (1) | NL7300350A (en) |
| SE (1) | SE387473B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU577934B2 (en) * | 1985-03-15 | 1988-10-06 | Sumitomo Electric Industries, Ltd. | Compound semiconductor device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5264272A (en) * | 1975-11-22 | 1977-05-27 | Fujitsu Ltd | Semiconductor crystal |
| GB2215514A (en) * | 1988-03-04 | 1989-09-20 | Plessey Co Plc | Terminating dislocations in semiconductor epitaxial layers |
| JP2588280B2 (en) * | 1989-07-10 | 1997-03-05 | シャープ株式会社 | Compound semiconductor light emitting device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3493811A (en) * | 1966-06-22 | 1970-02-03 | Hewlett Packard Co | Epitaxial semiconductor material on dissimilar substrate and method for producing the same |
-
0
- BE BE793800D patent/BE793800A/en unknown
-
1973
- 1973-01-09 DE DE2300921A patent/DE2300921A1/en active Pending
- 1973-01-09 GB GB110773A patent/GB1417484A/en not_active Expired
- 1973-01-09 FR FR7300559A patent/FR2167831B1/fr not_active Expired
- 1973-01-09 CA CA160,857A patent/CA973976A/en not_active Expired
- 1973-01-10 AU AU50942/73A patent/AU466927B2/en not_active Expired
- 1973-01-10 NL NL7300350A patent/NL7300350A/xx unknown
- 1973-01-10 JP JP581973A patent/JPS5228634B2/ja not_active Expired
- 1973-01-10 IT IT19137/73A patent/IT978097B/en active
- 1973-01-10 SE SE7300295A patent/SE387473B/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU577934B2 (en) * | 1985-03-15 | 1988-10-06 | Sumitomo Electric Industries, Ltd. | Compound semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5228634B2 (en) | 1977-07-27 |
| BE793800A (en) | 1973-05-02 |
| GB1417484A (en) | 1975-12-10 |
| CA973976A (en) | 1975-09-02 |
| IT978097B (en) | 1974-09-20 |
| NL7300350A (en) | 1973-07-12 |
| AU5094273A (en) | 1974-07-11 |
| DE2300921A1 (en) | 1973-07-19 |
| JPS504977A (en) | 1975-01-20 |
| FR2167831A1 (en) | 1973-08-24 |
| SE387473B (en) | 1976-09-06 |
| FR2167831B1 (en) | 1977-12-30 |
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