AU499052B2 - Complementary transistor structure - Google Patents

Complementary transistor structure

Info

Publication number: AU499052B2
Authority: AU; Australia
Prior art keywords: transistor structure; complementary transistor; complementary; transistor
Prior art date: 1974-06-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

AU82149/75A

Other versions

AU8214975A (en

Inventor

J A Appels

F C Eversteijn

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Koninklijke Philips NV

Original Assignee

Philips Gloeilampenfabrieken NV

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-06-18

Filing date

1975-06-17

Publication date

1979-04-05

1975-06-17 Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV

1976-12-23 Publication of AU8214975A publication Critical patent/AU8214975A/en

1979-04-05 Application granted granted Critical

1979-04-05 Publication of AU499052B2 publication Critical patent/AU499052B2/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/30—Isolation regions comprising PN junctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
- H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations

AU82149/75A 1974-06-18 1975-06-17 Complementary transistor structure Expired AU499052B2 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NLNL7408110		1974-06-18
NL7408110A NL7408110A (en)	1974-06-18	1974-06-18	SEMICONDUCTOR DEVICE WITH COMPLEMENTARY TRANSISTOR STRUCTURES AND METHOD FOR MANUFACTURE THEREOF.

Publications (2)

Publication Number	Publication Date
AU8214975A AU8214975A (en)	1976-12-23
AU499052B2 true AU499052B2 (en)	1979-04-05

Family

ID=19821569

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU82149/75A Expired AU499052B2 (en)	1974-06-18	1975-06-17	Complementary transistor structure

Country Status (13)

Country	Link
JP (1)	JPS5112778A (en)
AU (1)	AU499052B2 (en)
BE (1)	BE830286A (en)
BR (1)	BR7503777A (en)
CA (1)	CA1029134A (en)
CH (1)	CH588166A5 (en)
DE (1)	DE2525529B2 (en)
ES (1)	ES438593A1 (en)
FR (1)	FR2275884A1 (en)
GB (1)	GB1505103A (en)
IT (1)	IT1046053B (en)
NL (1)	NL7408110A (en)
SE (1)	SE407996B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL7710164A (en) *	1977-09-16	1979-03-20	Philips Nv	METHOD OF TREATING A SINGLE CRYSTAL LINE BODY.
US4159915A (en) *	1977-10-25	1979-07-03	International Business Machines Corporation	Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
US4232328A (en) *	1978-12-20	1980-11-04	Bell Telephone Laboratories, Incorporated	Dielectrically-isolated integrated circuit complementary transistors for high voltage use
GB2060252B (en) *	1979-09-17	1984-02-22	Nippon Telegraph & Telephone	Mutually isolated complementary semiconductor elements
JPS57204898A (en) *	1981-06-02	1982-12-15	Saito Masayasu	Pump for vessel for dividing liquid little by little
JP2531824Y2 (en) *	1987-02-13	1997-04-09	株式会社神崎高級工機製作所	Hydraulic clutch type transmission
JPS63142451U (en) *	1987-03-12	1988-09-20
US5070382A (en) *	1989-08-18	1991-12-03	Motorola, Inc.	Semiconductor structure for high power integrated circuits
US7076124B2 (en) *	2002-12-20	2006-07-11	Avago Technologies, Ltd.	Integrated multichannel laser driver and photodetector receiver
EP4372792A1 (en) *	2022-11-16	2024-05-22	Infineon Technologies Dresden GmbH & Co . KG	Semiconductor device

1974
- 1974-06-18 NL NL7408110A patent/NL7408110A/en not_active Application Discontinuation
1975
- 1975-05-21 GB GB21807/75A patent/GB1505103A/en not_active Expired
- 1975-06-07 DE DE19752525529 patent/DE2525529B2/en not_active Withdrawn
- 1975-06-11 CA CA229,060A patent/CA1029134A/en not_active Expired
- 1975-06-13 CH CH771075A patent/CH588166A5/xx not_active IP Right Cessation
- 1975-06-13 IT IT24362/75A patent/IT1046053B/en active
- 1975-06-16 SE SE7506878A patent/SE407996B/en unknown
- 1975-06-16 JP JP50072123A patent/JPS5112778A/en active Granted
- 1975-06-16 BE BE157368A patent/BE830286A/en unknown
- 1975-06-16 BR BR4859/75A patent/BR7503777A/en unknown
- 1975-06-16 ES ES438593A patent/ES438593A1/en not_active Expired
- 1975-06-17 AU AU82149/75A patent/AU499052B2/en not_active Expired
- 1975-06-18 FR FR7519105A patent/FR2275884A1/en active Granted

Also Published As

Publication number	Publication date
NL7408110A (en)	1975-12-22
CA1029134A (en)	1978-04-04
SE7506878L (en)	1975-12-19
JPS5247319B2 (en)	1977-12-01
DE2525529A1 (en)	1976-01-08
CH588166A5 (en)	1977-05-31
SE407996B (en)	1979-04-30
BR7503777A (en)	1976-07-06
DE2525529B2 (en)	1977-08-04
JPS5112778A (en)	1976-01-31
BE830286A (en)	1975-12-16
IT1046053B (en)	1980-06-30
AU8214975A (en)	1976-12-23
FR2275884A1 (en)	1976-01-16
FR2275884B1 (en)	1980-10-24
GB1505103A (en)	1978-03-22
ES438593A1 (en)	1977-01-16

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AU499460B2 (en)	1979-04-26	Antiobotics
AU499052B2 (en)	1979-04-05	Complementary transistor structure
AU467292B2 (en)	1975-11-27	Eye-bush
CA1016245A (en)	1977-08-23	Compound transistor circuitry
AU496973B2 (en)	1978-11-16	5-nitro-imidazoles
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