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AU534874B2 - High-voltage solid state switch - Google Patents
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AU534874B2 - High-voltage solid state switch - Google Patents

High-voltage solid state switch

Info

Publication number
AU534874B2
AU534874B2 AU65449/80A AU6544980A AU534874B2 AU 534874 B2 AU534874 B2 AU 534874B2 AU 65449/80 A AU65449/80 A AU 65449/80A AU 6544980 A AU6544980 A AU 6544980A AU 534874 B2 AU534874 B2 AU 534874B2
Authority
AU
Australia
Prior art keywords
solid state
state switch
voltage solid
voltage
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU65449/80A
Other versions
AU6544980A (en
Inventor
Adrian Ralph Hartman
Terence James Riley
Peter William Shackle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of AU6544980A publication Critical patent/AU6544980A/en
Application granted granted Critical
Publication of AU534874B2 publication Critical patent/AU534874B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211Gated diodes
    • H10D12/212Gated diodes having PN junction gates, e.g. field controlled diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/011Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
AU65449/80A 1979-12-28 1980-12-17 High-voltage solid state switch Ceased AU534874B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10777579A 1979-12-28 1979-12-28
US107775 1979-12-28

Publications (2)

Publication Number Publication Date
AU6544980A AU6544980A (en) 1981-07-02
AU534874B2 true AU534874B2 (en) 1984-02-16

Family

ID=22318408

Family Applications (1)

Application Number Title Priority Date Filing Date
AU65449/80A Ceased AU534874B2 (en) 1979-12-28 1980-12-17 High-voltage solid state switch

Country Status (21)

Country Link
JP (1) JPS56103467A (en)
KR (1) KR840002413B1 (en)
AU (1) AU534874B2 (en)
BE (1) BE886821A (en)
CA (1) CA1145057A (en)
CH (1) CH652863A5 (en)
DD (1) DD156039A5 (en)
DE (1) DE3048702A1 (en)
DK (1) DK549780A (en)
ES (1) ES498097A0 (en)
FR (1) FR2473790A1 (en)
GB (1) GB2066569B (en)
HK (1) HK69684A (en)
HU (1) HU181246B (en)
IE (1) IE50697B1 (en)
IL (1) IL61780A (en)
IT (1) IT1134896B (en)
NL (1) NL8007051A (en)
PL (1) PL228665A1 (en)
SE (1) SE453621B (en)
SG (1) SG35184G (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4467344A (en) * 1981-12-23 1984-08-21 At&T Bell Telephone Laboratories, Incorporated Bidirectional switch using two gated diode switches in a single dielectrically isolated tub
US4573065A (en) * 1982-12-10 1986-02-25 At&T Bell Laboratories Radial high voltage switch structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1039915A (en) * 1964-05-25 1966-08-24 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE2102103A1 (en) * 1970-01-22 1971-07-29 Rca Corp Field effect controlled diode
JPS5135114B1 (en) * 1970-12-28 1976-09-30
US3725683A (en) * 1971-02-03 1973-04-03 Wescom Discrete and integrated-type circuit
DE2133430A1 (en) * 1971-07-05 1973-01-18 Siemens Ag PLANAR FOUR-LAYER DIODE
DE2241600A1 (en) * 1971-08-26 1973-03-01 Dionics Inc HIGH VOLTAGE P-N TRANSITION AND ITS APPLICATION IN SEMICONDUCTOR SWITCHING ELEMENTS, AND THE PROCESS FOR ITS MANUFACTURING
JPS5032942U (en) * 1973-07-23 1975-04-10
JPS5210061A (en) * 1975-07-15 1977-01-26 Hitachi Ltd Thyristor circuit
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5412682A (en) * 1977-06-30 1979-01-30 Nec Corp Thyristor
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
WO1980001337A1 (en) * 1978-12-20 1980-06-26 Western Electric Co High voltage dielectrically isolated solid-state switch

Also Published As

Publication number Publication date
HU181246B (en) 1983-06-28
KR830004678A (en) 1983-07-16
BE886821A (en) 1981-04-16
CH652863A5 (en) 1985-11-29
IL61780A (en) 1983-07-31
SE8008851L (en) 1981-06-29
IE50697B1 (en) 1986-06-25
PL228665A1 (en) 1981-09-04
DD156039A5 (en) 1982-07-21
CA1145057A (en) 1983-04-19
FR2473790B1 (en) 1985-03-08
KR840002413B1 (en) 1984-12-27
IT8026947A0 (en) 1980-12-24
GB2066569A (en) 1981-07-08
IT1134896B (en) 1986-08-20
AU6544980A (en) 1981-07-02
ES8201376A1 (en) 1981-12-16
ES498097A0 (en) 1981-12-16
GB2066569B (en) 1983-09-14
SG35184G (en) 1985-02-08
DK549780A (en) 1981-06-29
IE802604L (en) 1981-06-28
IL61780A0 (en) 1981-01-30
HK69684A (en) 1984-09-14
NL8007051A (en) 1981-07-16
FR2473790A1 (en) 1981-07-17
DE3048702A1 (en) 1981-09-10
JPS56103467A (en) 1981-08-18
SE453621B (en) 1988-02-15

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