AU548183B2 - Junction field effect transistor photodetector - Google Patents
Junction field effect transistor photodetectorInfo
- Publication number
- AU548183B2 AU548183B2 AU90474/82A AU9047482A AU548183B2 AU 548183 B2 AU548183 B2 AU 548183B2 AU 90474/82 A AU90474/82 A AU 90474/82A AU 9047482 A AU9047482 A AU 9047482A AU 548183 B2 AU548183 B2 AU 548183B2
- Authority
- AU
- Australia
- Prior art keywords
- field effect
- effect transistor
- junction field
- transistor photodetector
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/287—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices having PN heterojunction gates
- H10F30/2877—Field-effect phototransistors having PN heterojunction gates
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08134636A GB2109991B (en) | 1981-11-17 | 1981-11-17 | Photodetector |
| GB8134636 | 1981-11-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU9047482A AU9047482A (en) | 1983-05-26 |
| AU548183B2 true AU548183B2 (en) | 1985-11-28 |
Family
ID=10525944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU90474/82A Ceased AU548183B2 (en) | 1981-11-17 | 1982-11-15 | Junction field effect transistor photodetector |
Country Status (5)
| Country | Link |
|---|---|
| AU (1) | AU548183B2 (en) |
| CH (1) | CH659543A5 (en) |
| FR (1) | FR2516707B1 (en) |
| GB (1) | GB2109991B (en) |
| NZ (1) | NZ202775A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU609508B2 (en) * | 1987-08-20 | 1991-05-02 | Canon Kabushiki Kaisha | Photosensor device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2145279B (en) * | 1983-08-18 | 1987-10-21 | Standard Telephones Cables Ltd | Photodetector integrated circuit |
| EP0160377A1 (en) * | 1984-03-28 | 1985-11-06 | International Standard Electric Corporation | Heterojunction photo-FET and method of making the same |
| US4706103A (en) * | 1985-06-17 | 1987-11-10 | Hughes Aircraft Company | Bipolar electrode scheme for electro-optic semiconductor waveguide devices |
| US5122851A (en) * | 1989-04-03 | 1992-06-16 | Grumman Aerospace Corporation | Trench JFET integrated circuit elements |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2226754B1 (en) * | 1973-04-20 | 1975-08-22 | Thomson Csf |
-
1981
- 1981-11-17 GB GB08134636A patent/GB2109991B/en not_active Expired
-
1982
- 1982-11-10 NZ NZ202775A patent/NZ202775A/en unknown
- 1982-11-15 AU AU90474/82A patent/AU548183B2/en not_active Ceased
- 1982-11-17 CH CH6698/82A patent/CH659543A5/en not_active IP Right Cessation
- 1982-11-17 FR FR8219265A patent/FR2516707B1/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU609508B2 (en) * | 1987-08-20 | 1991-05-02 | Canon Kabushiki Kaisha | Photosensor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2516707B1 (en) | 1986-05-30 |
| FR2516707A1 (en) | 1983-05-20 |
| GB2109991B (en) | 1985-05-15 |
| NZ202775A (en) | 1985-07-12 |
| AU9047482A (en) | 1983-05-26 |
| GB2109991A (en) | 1983-06-08 |
| CH659543A5 (en) | 1987-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3277159D1 (en) | Lateral junction field effect transistor device | |
| AU537887B2 (en) | Photoelectric semiconductor device | |
| GB2106711B (en) | Field effect transistor | |
| AU8331682A (en) | Improved photodetector | |
| AU548667B2 (en) | Three point hitch | |
| DE3273867D1 (en) | Field effect transistor | |
| AU573375B2 (en) | Schottky - gate field effect transistors | |
| AU574487B2 (en) | Optical junction | |
| AU552505B2 (en) | Semiconductor device | |
| JPS57192081A (en) | Field effect transistor unit | |
| GB8300617D0 (en) | Junction field effect transistor | |
| AU548183B2 (en) | Junction field effect transistor photodetector | |
| AU547478B2 (en) | Magnetically sensitive transistors | |
| AU553183B2 (en) | Josephson junction or gate | |
| AU521670B2 (en) | Field effect transistor | |
| AU537860B2 (en) | Junction field effect transistor | |
| JPS5698878A (en) | Junction type field effect transistor | |
| AU553862B2 (en) | Fastening device | |
| EP0325383A3 (en) | Junction field effect transistors | |
| AU7989782A (en) | Transistor inverter device | |
| AU542671B2 (en) | Fastening device | |
| AU8008682A (en) | Rock-scaling device | |
| GB2133621B (en) | Junction field effect transistor | |
| AU555817B2 (en) | Transistor structure | |
| AU7959982A (en) | Self-bailing device |