AU600804B2 - Method of and apparatus for the regulation of the multiplication factor of avalanche photo-diodes in optical receivers - Google Patents
Method of and apparatus for the regulation of the multiplication factor of avalanche photo-diodes in optical receivers Download PDFInfo
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- AU600804B2 AU600804B2 AU13175/88A AU1317588A AU600804B2 AU 600804 B2 AU600804 B2 AU 600804B2 AU 13175/88 A AU13175/88 A AU 13175/88A AU 1317588 A AU1317588 A AU 1317588A AU 600804 B2 AU600804 B2 AU 600804B2
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- Prior art keywords
- diode
- avalanche photo
- regulating
- low
- bias voltage
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- 238000000034 method Methods 0.000 title claims description 21
- 230000003287 optical effect Effects 0.000 title claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 34
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000005070 sampling Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3084—Automatic control in amplifiers having semiconductor devices in receivers or transmitters for electromagnetic waves other than radiowaves, e.g. lightwaves
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/60—Receivers
- H04B10/66—Non-coherent receivers, e.g. using direct detection
- H04B10/69—Electrical arrangements in the receiver
- H04B10/691—Arrangements for optimizing the photodetector in the receiver
- H04B10/6911—Photodiode bias control, e.g. for compensating temperature variations
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Optical Communication System (AREA)
- Light Receiving Elements (AREA)
Description
P
I I 600804 S F Ref: 51910 FORM COMMONWEALTH OF AUSTRALIA PATENTS ACT 1952 COMPLETE SPECIFICATION
(ORIGINAL)
FOR OFFICE USE: Class Int Class ar a Complete Specification Lodged: Accepted: Published: ~ur~ Priority: 7 Related Art: Name and Address of Applicant: Siemens Aktiengesellschaft Wittelsbacher Platz 2 8000 Muenchen FEDERAL REPUBLIC OF GERMANY Spruson Ferguson, Patent Attorneys Level 33 St Martins Tower, 31 Market Street Sydney, New South Wales, 2000, Australia Address for Service: Complete Specification for the invention entitled: Method of and Apparatus for the Regulation of the Multiplication Factor of Avalanche Photo-Diodes in Optical Receivers The following statement is a full description of this invention, including the best method of performing it known to me/us 5845/4
U,
L,
i -1 i-l j ABSTRACT Fig. 1 METHOD OF AND APPARATUS FOR THE REGULATION OF THE MULTIPLICATION FACTOR OF AVALANCHE PHOTO-DIODES IN OPTICAL RECEIVERS i Since in avalanche photo-diodes (APD), above a temperature-dependent value, the noise increases more steeply than the multiplication factor, so that the signal-to-noise ratio is impaired and thus an increase can occur in the bit error quota in the transmission of digital signals, and in addition wiLh an increase in IO multiplication factor a reduction occurs in the bandwidth, the multiplication factor is regulated via bias voltage- or bias current regulation, This is done by superimposing a low-frequency signal of low amplitude upon the bias current or bias voltage, and the attenuation thereof through the avalanche photo-diode is determined Sand compared with a standard value, Deviations from the standard Svalue are manifest in a comparison signal of greater or lesser magnitude which is used to regulate the bias current or bias voltage, METHOD OF AND APPARATUS FOR THE REGULATION OF THE MULTIPLICATION FACTOR OF AVALANCHE PHOTO-DIODES IN OPTICAL RECEIVERS This invention rel.ates to a method of and apparatus for regulating the multiplication factor of avalanche photo-diodes in Hoptical receivers for in particular digital signals with a high bit Vrate by regulating the bias voltage connected to the avalanche photo-diode.
In the practical usage of sensitive, optical, digital V Co receivers, in which avalanche photo-diodes are used as light detectors, in the case of low light power it is necessary to regulate the avalanche rulttplication factor via the bias voltage In such manner as to achieve a minimal bit error quota. The optimum avalanche mutpIainfctri eedn mu~~.tipllcatlon fatri eedn pon different technological parameters, e.g. the volume dark current and the breakdown voltage of the diode, and upon different operating parameters, which in part also cause changes in the technological parameters. The operating parameteiz include the received light power and In particular the operating tem~perature, as the volume dark current of avalanche 'Z~O photo-diodes komposed of germanium doubles with every temperature Increase of 8(1C.
European patent specification EP-Al-0054571. has already disclosed an arrangement for regulating the multiplication factor of avalanche photo-diodes. in this arrangement the product of the peak i Na~n~~ -2value of the primary photo-current and of the multiplication factor of the avalanche photo-diode is maintained constant via the diode bias voltage by means of a regulating circuit in the critical lower range of the received light power that can be processed. The amplifier which is directly connected to the avalanche photo-diode is included in the regulation procedure so that changes in the amplifier o a can influence the regulation. This is of significance as the multiplication factor of the avalanche photo-diode '13 determined by its bias voltage, although the relationship between bias voltage and 1I multiplication factor in the range of interest is extremely non-linear so that the regulation and the fundamental adjustment thereof must meet high accuracy requirements. These requirements include the fact that the production-related parameter divergences must be taken into account, if possible without special adjustment, in order that the'bit error quota of the avalanche photo-diodes which are used be minimal over the low light power range. It must also be ensured that the bit error quota in the low light power range remains as low as possible in the event of changes in the diode parameters which occur during the course of operation. The bit error quota in 2 0 the low light power range is to remain minimal within the largest possible temperature interval, and an arrangement of this kind is to be able to be constructed with a low outlay.
Methods of regulating avalanche photo-diodes are already known in which a temperature-controlled bias voltage is supplied via _4
A
7 -3a bias resistor. Such methods are extremely sensitive to changes in the surface dark current of the avalanche photo-diode as changes in the surface dark current lead to changes In the voltage drop across the series resistor and thus also to changes In the multiplication factor.
Thus it Is an aim of the present Invention to further develop a method and apparatus which will provide improved characteristics.
In accordance with one aspect of the present Invention there is disclosed a method of regulating the multiplication factor of avalanche photo-diodes in optical receivers for, in particular, digital signals with a high bit rate, by regulating a bias voltage connected to the avalanche photo-diode, said method including the steps of: generating a low-frequency signal of comparatively low amplitude, superimposing this low-frequency signal upon the bias voltage of the avalanche photo-diode; determining a differential conductance of said avalanche photo-diode oo at its operating point; comparing the differential conductance of the avalanche photo-diode with a preset theoretical value and in dependence thereon, generating an S. appropriate regulating signal; and S,"0 regulating the bias voltage of the avalanche photo-diode by means of the generated regulating signal.
ii In accordance with another aspect of the present Invention there Is ji disclosed apparatus for regulating the multiplication factor of avalanche photo-diodes In optical receivers for, in particular, digital signals with I 25 a high bit rate, by regulating a bias voltage connected to the avalanche photo-diode, said apparatus Including means for generating a low-frequency signal of comparatively low amplitude; means for superimposing this low-frequency signal upon the bias voltage of the avalanche photo-diode; means for determining the attenuation of the low-frequency signal C or t o through the avalanche photo-diode by sampling thecur rent r Votagc VOl tce v c-i
N
i-t-hrough4t said avalanche photo-diode, and thus determining a differential conductance thereof at its operating point; means for comparing the differential conductance of the avalanche photo-diode with a preset theoretical value and means for, in dependence 3A thereon, generating an appropriate regulating signal; and means for regulating the bias voltage of the avalanche photo-diode by means of the generated regulating signal.
An embodiment of this Invention will now be described, by way of example, with reference to the accompanying drawing, In which: 4,4 t09 I c _r rcx~ ij Fig i invention f photo-diode Fig 1 is a block circuit diagram of apparatus embodying the or regulating the multiplication factor of avalanche s; and 2 is a graph illustrdting the operating curve of the i r i i i jl 2 i:! avalanche photo-diode.
Referring to Fig. 1 an avalanche photo-diode APD is optically coupled to a signal light source, the light of which is converted into an electrical signal, amplified by a following receiving amplifier EV, and emitted at an output A of this amplifier. The anode; 10 of the avalanche photo-diode APD is connected to the input of the receiving amplifier EV and is thus connected to reference potential in low-ohmic fashion for a.c. signals, as in this embodiment a transimpedance amplifier is provided as receiving amplifier EV.
The comparatively high bias voltage for the initiation of the avalanche effect is supplied to the avalanche photo-diode APO via a current reflector circuit SS which is connected to a positive terminal UB operating voltage source. That current path of the current reflector circuit which is not connected to the avalanche phot' diode APD is connected to the collector terminal of a transistor T whose base terminal is connected to reference potencial and whose emitter terminal is connected via a first resistor R1 to the output terminal of an operational amplifier OA, via a second resistor R2 and a first capacitor C1 to the output terminal of a low-frequency generator NFG, and via a third resistor R3 to a negative terminal -UB of the operating voltage source, That current path of the current reflector circuit SS which is connected to the avalanche photo-diode APD is connected to reference potential via a second capacitor C2 which is conductive for high-frequency signals and is non-conductive for low-frequency signals. This current path is also connected to a rectifier Sarrangement GR via a third capacitor C3 which is conductive for low-frequency signals. The output of the rectifier arrangement GR is connected via a fourth resistor R4 to the inverting input of the p' eratlonal amplifier OA whose non-inverting input is connected to a 0C reference voltage source UR. The output of this operational amplifier is additionally connected via a fourth capacitor C4 to the inverting input of the operational amplifier, so that the latter operates as an integrator.
In the embodiment shown, the rectifier arrangement is a synchronous rectifler, Following an input-end impedance transformer IW, a multiplier MU is provided whose x-input is connected to the output of the impedance transformer and whose inverting y-Input is connected to the output of the low-frequency generator NFG, The i$ output of the multiplier provides the output of the rectifier arrangement GR, In operation of the apparatus the bias voltage of the avalanche photo-diode is regulated so that the differential conductance g Is maintained constant at the current-voltage operating point of the diode, Fig, 2 illustrates the dependence between the
I
>1 -6i low-frequency current in the avalanche photo-diode and the S low-frequency voltage across the avalanche photo-diode. The I differential conductance is calculated in accordance with I INFSS
UNFSS
The averaged current of the avalanche photo-diode is basically composed of the surface dark current, the multiplied volume 1 dark current and the averaged, multiplied, primary photo-signal current, The regulating criterion is now obtained by the I superimposition of a low amplitude current INF, which is S IC comparatively low in frequency in relation to the hseful signal, and the resultant voltage U'NF. The ratio between the current- and voltage amplitude represents the differential. conductance g, thus the |regulating variable. For this purpose the low-frequency generator NFG is provided which inputs a comparatively low-frequency current INF, via t.'ie first capacitor Cl and the second resistor R2, into that |I current path of the current reflector SS which is not connected to 1 the avalanche photo-diode. The reflection of the low-frequency current in the cuxrent reflector results in a corresponding,
J'
low-frequency current INF through the avalanche photo-diode APD, J 2C) and this current leads to a corresponding Voltage drop UNF which is detected in the rectifier arrangement GR.
In order that the regulation may be as precise. and interference-inse ,itive as possible, the rectifiCer arrangement GR consists of a synchronous rectifier in that it is additionally 4 -7supplied in inverted form with the output voltage LTNFR Of the low-frequency generator at a further input, i If the accuracy of the regulation is subject to lesser requirements, the rectifier arrangement GR can consist of a series arrangement of an impedance transformer and a simple rectifier. The output signal of the rectifier arrangement GR Is fed via the fourth resistor R4 to the inverting input of the operational amplifier OA which, by Virtue of the capacitor C4, operates as an Integrator and whose non-inverting Input 15 conne-zted to the reference Voltage tJR which corresponds to the theoretical value of the differential conductance of the photo-diode, The output current of the operational amplifier OA is Input via the first resistor R1 into that current path of the current reflector SS whtch is not connected to the avalanche photo-diode APD and to a corresponding change In the bias current I which Is supplied to the avalanche photo-diodej and In the corresponding bias voltage, The regulation Is based on the known relationship between the d multiplication factor M1 and the bias Voltage UAPD Of the avalanche photo-diode A, D; J M n
UAPO)
U BR (I +r A T) Where tJBR avalanche breakdown Voltage at 2500 temperature coeffcient of the breakdown voltage L6 T temperature 2$OC With a predetermined Input signal and a predetermined volume dark current of the avalanche photo-diode, and with a predetermined multiplication factor 14, the conductance g of the avalanche photo-diode APD is: n g (1 L~T) BR it has proved that In mnost applications where the characteristics of the diodes which are used 21e within a specified bandwidth, no special adVjustment is required, An Increase in accuracy can be achieved by adapting the theoretical conductance, In accordance with the above-given relationship, to the value for the avalanche break~down voltage of the respective diode, The value of the breakdown vt~lake Is generally determined by the manufacturer so that this gives rise only to a- simll additional outlay, and in addition a comparatively non-crItIl:4 temperature control of the theoretical conductance of the avalanche photo-diode is possible, The basic circuit shown In Figt 1 can also be modified In such manner that Insteaa of passing a constant alternating current through the avalanche photo-diode and analysing the resultant a,(4, voltage, an a~c, voltage Is Impressed and the resultant alternating 0C current, Is detected, rn many applications for UB a d~c, voltage converter Is required Which generates the comparatively high dCo, voltage required for the avalanche photo-diode by means of a -9conversion. The residual ripple of this d.c. voltage converLer can now be used as a low-frequency signal so that In this case the LF-generaitr NFG Is not required.
In the case of high Input light power the regulation contcrol range can be overshot, In this cae It can be expodlent to provide! a I simple clamping circuit which, via a resistor, intervenes Into the APD-suppJly in. such manner that at a high input light power the multiplication factor of the avalanche photo-diode Is mraintained at I C.)The method described above has the advantage that it operates wt thollt information from the amplifiers Which follow the avalanche photo-diode In this way it becomes additionally possible to opttmize those light recetivers which contain lImiting amplifier stages and which do not include a DO; detector. This itS of Particul~ir' Interest K for the regeneration of digital stqn~ls as In this way it Is pos:i1le to sibtnllyreduce the amplifier outlay required to drive the regenera Vor. The method has. the further advantages of low sensitivity to component tolerances so that In most cases no Individual adjustment of the bias Voltage regulation Is reqitred.
Claims (9)
1. A method of regulating the fultiplcation factor of avalanche photo-diodes in optical receivers for, in particular, digital signals with a high bit rate, by regulating a bias voltage connected the avalanche photo-diode, said method including the steps of: generating a low-frequency signal of comparatively low amplitude, superimposing this low-frequency signal upon the bias voltage of the avalanche photo-diode; determining a differential conductance of said avalanche photo-diode at its operating point; comparing the differential conductance of the avalanche photo-diode with a preset theoretical value and in dependence thereon, generating an appropriate regulating signal; and regulating the bias voltage of the avalanche photo-diode by means of the generated regulating signal.
2. A method as claimed In claim 1, wherein said differential conductance is determined by passing a low-frequency current through the avalanche photo-diode and determining the corresponding voltage drop across the avalanche photo-diode. °D
3. A method as claimed in claim 1, wherein said differential conductance Is determined by applying a low-frequency voltage to the avalanche photo-diode and determining the corresponding low-frequency Scurrent through the avalanche photo-diode.
4. A method as claimed in any one of the preceding claims, wherein j the bias voltage of the avalanche photo-diode is generated by means of a d.c. voltage converter, having residual ripple, said ripple serving as a low-frequency signal. A method of regulating the multiplication factor of avalanche photo-diodes in optical receivers for, in particular, digital signals with a high bit rate, by regulating a bias voltage connected to the avalanche photo-diode, said method being substantially as described herein with reference to the accompanying drawing.
AD/ S 1 ti-- j r 11
6. Apparatus for regulating the multiplication factor of avalanche photo-diodes in optical receivers for, in particular, digital signals with a high bit rate, by regulating a bias voltage connected to the avalanche photo-diode, said apparatus including means for generating a low-frequency signal of comparatively low amplitude; means for superimposing this low-frequency signal upon the bias voltage of the avalanche photo-diode; means for determining the attenuation of the low-frequency signal through the avalanche photo-diode by sampling the current or *o44a4ltg +Kk vOf-ge- k .thoughat said avalanche photo-diode, and thus determining a differential conductance thereof at its operating point; means for comparing the differential conductance of the avalanche photo-diode with a preset theoretical value and means for, in dependence thereon, generating an appropriate regulating signal; and means for regulating the bias voltage of the avalanche photo-diode by means of the generated regulating signal. II 4 4** 4#1 4r I I,4 ry ;C IAD/9490 W1-*-B< -12-
7. Apparatus as claimed in claim 6, wherein a low-frequency generator is provided whose output is connected via a current reflector circuit to a terminal of the avalanche photo-diode, the other terminal of the avalanche photo-diode onected to the input of a receiving amplifier from whose output te-/high-frequency S* useful signal can be obtained, .e the link between the current reflector circuit and the avalanche photo-diode is 7onnected to a rectifier arrangement whose output is connected to the first input of an operational amplifier which is connected as integrator and the other input of this operational amplifier ir connected to a reference voltage source, and the output of the operational amplifer is connected via a first resistor to that current path of the current reflector circuit to which the avalanche photo-diode is not connected.
8. Apparatus as claimed in claim 7, wherein at its input end the rectifier arrangement comprises an impedance transformer whose output is connected to the first input of a multiplier, the other input of this multiplier being an inverting input connected to the output of m/ the low-frequency generator, the output of the multiplier providing the output of the rectifier arrangement.
9. Apparatus as claimed in claim 7, wherein the current reflector circuit is connected or, the one hand to a positive terminal of an operating voltage source and is connected on the other hand via 11 tV II ii -13- q p C) IC I, ~P *1 I 1 first current path to the collector terminal of a transistor whose base terminal is connected to earth, the emitter terminal of this transistor being conrnected via the series arrangement of a second resistor and a first capacitor to the output of the LF-generator, via a first resistor to the output of the operational amplifier and via a third resistor to a legative terminal of the operating voltage source, the second current path of the current reflector circuit beire connected Lo the rectifier arrangement, the avalanche photo-diode, and, via a second capacitor, to reference potential. Apparatus for regulating the multiplication factor of avalanche photo-dlodes in optical receivers for, in particular, digital signals with a high bit rate, by regulating a bias voltage connected to the avalanche photo-diode, said apparatus being substantially as described herein with reference to the accompminying drawing. DATED this FIFTEENTH day of MARCH 1988 Siemens Aktiengesellschaft Patent Attorneys for the Applicant SPRUSON FERGUSON J
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3708665 | 1987-03-17 | ||
| DE3708665 | 1987-03-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU1317588A AU1317588A (en) | 1988-09-15 |
| AU600804B2 true AU600804B2 (en) | 1990-08-23 |
Family
ID=6323287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU13175/88A Ceased AU600804B2 (en) | 1987-03-17 | 1988-03-16 | Method of and apparatus for the regulation of the multiplication factor of avalanche photo-diodes in optical receivers |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0282801B1 (en) |
| AU (1) | AU600804B2 (en) |
| DE (1) | DE3870493D1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU621438B2 (en) * | 1988-12-30 | 1992-03-12 | Alcatel N.V. | Optical receiver including a current limiter |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3852394D1 (en) * | 1988-09-15 | 1995-01-19 | Siemens Ag | Circuit arrangement for determining a received light output. |
| DE4121400C1 (en) * | 1991-06-28 | 1992-12-17 | Ant Nachrichtentechnik Gmbh, 7150 Backnang, De | Regulating amplification of avalanche diode in optical preamplifier - setting bias from signal derived from comparison of stipulated value and signal derived from noise voltage at output when no optical signal is at input |
| CN114739433B (en) * | 2022-04-15 | 2023-12-26 | 北京京东方光电科技有限公司 | A photoelectric sensor signal reading circuit and photoelectric sensor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0017596A1 (en) * | 1979-04-10 | 1980-10-15 | Societe D'etudes Recherches Et Constructions Electroniques Sercel | Low noise photoreceiver |
| EP0054571A1 (en) * | 1980-06-25 | 1982-06-30 | Fujitsu Limited | Light receiving circuit |
| EP0176448A2 (en) * | 1984-09-28 | 1986-04-02 | Electricite De France | Detector of a light beam with a photodiode and bias control circuit |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE382507B (en) * | 1974-06-05 | 1976-02-02 | Aga Ab | WAY TO REGULATE THE GAIN IN A RADIATION DETECTIVE LOW INDIOD. |
| FR2490404A1 (en) * | 1980-09-16 | 1982-03-19 | Pophillat Lucien | Instrumentation on avalanche photo diode gain stabilisation circuit - uses comparison between normal unity gain photocurrent and avalanche current to regulate reverse bias voltage |
-
1988
- 1988-02-29 DE DE8888103011T patent/DE3870493D1/en not_active Expired - Lifetime
- 1988-02-29 EP EP88103011A patent/EP0282801B1/en not_active Expired - Lifetime
- 1988-03-16 AU AU13175/88A patent/AU600804B2/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0017596A1 (en) * | 1979-04-10 | 1980-10-15 | Societe D'etudes Recherches Et Constructions Electroniques Sercel | Low noise photoreceiver |
| EP0054571A1 (en) * | 1980-06-25 | 1982-06-30 | Fujitsu Limited | Light receiving circuit |
| EP0176448A2 (en) * | 1984-09-28 | 1986-04-02 | Electricite De France | Detector of a light beam with a photodiode and bias control circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU621438B2 (en) * | 1988-12-30 | 1992-03-12 | Alcatel N.V. | Optical receiver including a current limiter |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0282801A1 (en) | 1988-09-21 |
| DE3870493D1 (en) | 1992-06-04 |
| AU1317588A (en) | 1988-09-15 |
| EP0282801B1 (en) | 1992-04-29 |
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