CN104465985A - Stripping method manufacturing process of anisotropic magnetoresistance chip - Google Patents
Stripping method manufacturing process of anisotropic magnetoresistance chip Download PDFInfo
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- CN104465985A CN104465985A CN201410150674.XA CN201410150674A CN104465985A CN 104465985 A CN104465985 A CN 104465985A CN 201410150674 A CN201410150674 A CN 201410150674A CN 104465985 A CN104465985 A CN 104465985A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 39
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 22
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 26
- 238000002360 preparation method Methods 0.000 claims description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910001868 water Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 150000001485 argon Chemical class 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 28
- 239000000463 material Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000003139 buffering effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 4
- 229910000889 permalloy Inorganic materials 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical group O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a stripping method manufacturing process of an anisotropic magnetoresistance chip. A corresponding graphical sensitive unit groove path is reserved on the surface of a wafer through photoresist, a functional film is deposited in the graphical sensitive unit groove path through radio frequency or direct-current magnetron sputtering, then, a stripping technology is used for stripping the photoresist on the periphery of the functional film, a stripping technology suitable for various film layer graphical schemes is applied, there is no specific requirement for the type of materials, technological parameters can change within a wide range, deposited atoms can full migrate on the substrate surface through a pulse radio frequency technology, the surface evenness of a buffering layer is improved, growth of a NiFe thin film structure can be induced better at normal temperature, the coercive force can be reduced, the sensitivity of the thin film becomes better, due to combination of the stripping technology and the pulse radio frequency technology, the best effect of the functional thin film can be obtained at normal temperature, the harsh technical requirement for other existing processes is lowered, and production cost is greatly reduced.
Description
Technical field
The present invention relates to a kind of stripping method preparation technology of anisotropic magnetoresistive chip, belong to electronic product preparing technical field.
Background technology
Because consumption electronic product is as the appearance of mobile phone, electronic compass, and the rise of automotive electronics and Internet of Things, the demand of magnetoresistive transducer is increased day by day.In magnetoresistive sensor chip, normally in the wafer of circuit, prepare sensitive thin film, this magnetoresistive transducer realizes intelligent chip and realizes the integrated of information sensing and signal transacting, when preparing sensitive layer film, due to patterned demand, usual employing dry method or wet-etching technology, its concrete steps are substantially as follows: first, resilient coating/permalloy/protective layer multilayer film applies photoresist, photoetching technique is utilized to obtain having the photoetching offset plate figure corresponding with anisotropic-magnetoresistance effect (AMR) resistor stripe figure, then, using photoetching offset plate figure as mask, utilize ion beam etching (IBE), the dry etching Ta/NiFe/Ta multilayer films such as reactive ion etching (RIE), or utilize energy and tantalum, the solution that permalloy (NiFe) reacts (such as: a kind of Ta corrosive liquid is K
2crO
7+ NaOH+ C
4h
4o
6kNa+ H
2o, a kind of corrosive liquid of NiFe alloy is HNO3+HCl+CH3COOH+H2O) wet etching Ta/NiFe/Ta multilayer film, finally remove photoresist, to obtain anisotropic-magnetoresistance effect (AMR) resistor stripe, although anisotropic-magnetoresistance effect (AMR) the resistor stripe graphical quality that ion beam etching (IBE) is prepared is relatively good, but the uniform ion beam source of large area etch rate makes difficulty, and IBE is not high to the selectivity of different materials etching speed, quarter must be spent when adopting ion beam etching (IBE) to prepare anisotropic-magnetoresistance effect (AMR) resistor stripe, damage is caused to substrate, this problem is more outstanding when etching large area substrates.Reactive ion etching (RIE) is high to the selectivity ratios ion beam etching (IBE) of different materials, but is difficult to find suitable reacting gas to etch permalloy, and complex process, technological parameter is more; Portable low, different materials, different etchings requires to need different etching raw materials and process, and early investment is large, and cost is high.
Summary of the invention
The object of the invention is: the stripping method preparation technology that a kind of anisotropic magnetoresistive chip is provided, the method is by using stripping technology and radio frequency (direct current) magnetron sputtering deposition functional membrane, this technique is reduced the selectivity of material, be applicable to the sensing unit of the multiple different film material of preparation, reduce production cost, to solve current existing technical problem.
Technical scheme of the present invention
A kind of stripping method preparation technology of anisotropic magnetoresistive chip, respective graphical sensing unit groove footpath is reserved at crystal column surface by photoresist, adopt radio frequency or magnetically controlled DC sputtering that functional membrane is deposited in graphical sensing unit groove footpath, then use the stripping of photoresist around stripping technology practical function film.
In the stripping method preparation technology of aforesaid anisotropic magnetoresistive chip, concrete preparation process is as follows: the stripping of wafer cleaning-wafer-baking-crystal column surface uniform gluing-exposure and development-function film deposition-photoresist.
In the stripping method preparation technology of aforesaid anisotropic magnetoresistive chip, described cleaning method container loads appropriate acetone, absolute ethyl alcohol, softened water, first wafer is put into acetone, 10 minutes are cleaned at Ultrasonic Cleaning machine, then take out and put into absolute ethyl alcohol immersion completely, finally put into softened water, washes of absolute alcohol is fallen, then with nitrogen High Pressure Gun, wafer is dried up.
In the stripping method preparation technology of aforesaid anisotropic magnetoresistive chip, described function film sink method be by exposure and development after wafer put into vacuum cavity and be filled with argon gas.The purity of this argon gas is more than 99.999%, and air pressure is 0.2 Pa ~ 0.8Pa, and resilient coating adopts pulse radiation frequency to deposit at normal temperatures as shielding power supply, then adopts radio frequency or direct current sputtering deposition NiFe layer, last sedimentary cover.
In the stripping method preparation technology of aforesaid anisotropic magnetoresistive chip, when pulse radiation frequency is as shielding power supply, sputtering time 50 s ~ 90s, power 80 W ~ 150W, pulse duration is 30% ~ 60%.
In the stripping method preparation technology of aforesaid anisotropic magnetoresistive chip, the deposition rate of resilient coating is 2 ~ 8nm/min.
In the stripping method preparation technology of aforesaid anisotropic magnetoresistive chip, the stripping technology of photoresist is the removal of solvents photoresist using not attack metal rete, adopts alcohol and acetone soln.Wafer is invaded bubble in acetone soln, and assisting ultrasonic process.
Owing to have employed technique scheme, compared with prior art, the present invention is by using lift-off technology, make not need special equipment in this technique, just can complete in glass container and acetone soln, and be applicable to the graphical scheme of various rete, material category is not specially required, and technology stability is high, technological parameter can change in wider scope, by using pulse radiation frequency technology, this technology is when deposit film, target rifle gap is powered, because pulse radiation frequency is gap deposition, for moving at substrate surface of material atom provides the time, improve the evenness of film, thus enhance the crystallization degree of film, improve the AMR value of material, the present invention is mainly by pulse radiation frequency deposition technique, deposition and atomic is fully moved at substrate surface, improve the surface smoothness of resilient coating, better can induce the growth of NiFe membrane structure at normal temperatures, increase size of microcrystal, thus improve the AMR value of permalloy film, and can coercive force be reduced, the sensitivity of film is made to become better, the present invention is combined with pulse radiation frequency technology by stripping technology, allow function film sink under can realizing normal temperature and obtain best effects, the technical requirement of other existing technique harshnesses can be overcome again, be conducive in enormous quantities, suitability for industrialized production, greatly reduce production cost.
Accompanying drawing explanation
Accompanying drawing 1 is finished product structure schematic diagram of the present invention;
Accompanying drawing 2 is structural representation after gluing of the present invention;
Accompanying drawing 3 is structural representation after the present invention's exposure and development;
Accompanying drawing 4 is the heavy rear structural representation of function film of the present invention;
Accompanying drawing 5 is structural representation after the stripping of glass cement of the present invention;
Accompanying drawing 6 is function film structural representation;
Accompanying drawing 7 is the structural representation of resilient coating in function film;
Accompanying drawing 8 is the AMR experiment curv figure of resilient coating in function film;
Accompanying drawing 9 is the structural representation of resilient coating in traditional handicraft;
Accompanying drawing 10 is the AMR experiment curv figure of resilient coating in traditional handicraft;
Accompanying drawing 11 is pulse radiation frequency schematic diagram.
Being labeled as in accompanying drawing: 1-substrate, 2 resilient coatings, 3-NiFe layer, 4-protective layer; 5-photoresist, 6-function film (magnetoresistive film).
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail, but not as any limitation of the invention.
A kind of stripping method preparation technology of anisotropic magnetoresistive chip, respective graphical sensing unit groove footpath is reserved at crystal column surface by photoresist, adopt radio frequency or magnetically controlled DC sputtering that functional membrane is deposited in graphical sensing unit groove footpath, then use the stripping of photoresist around stripping technology practical function film.
The photoresist model of the present embodiment is AZ703 or AZ6112, and it is as follows that this prepares concrete technology:
Step one, cleaning wafer
Appropriate acetone, absolute ethyl alcohol, softened water is loaded respectively with container, first wafer is put into acetone, clean 10 minutes in supersonic wave cleaning machine, then take out and put into absolute ethyl alcohol immersion completely, finally put into softened water, washes of absolute alcohol is fallen, then with nitrogen High Pressure Gun, wafer is dried up.
Step 2, baking wafer
Substrate heating actuator temperature is transferred to 100 degree, then the substrate cleaned is put on heater, toast 5 ~ 10 minutes;
Step 3, even glue, gluing
As shown in Figure 2: adopt automatic glue spreaders, rotating speed is 3000 turns per minute (time is 30s ~ 50s), toast about 60 seconds under the substrate being painted with glue being put into 90 ° ~ 100 ° after gluing completes.
Step 4, exposure
As shown in Figure 3: utilize mask aligner to carry out the exposure of respective graphical, there is respective graphical sensing unit groove footpath, the present embodiment can adopt AZ6112 photoresist, exposure time parameter is 7.8 seconds, also Nikon step photo-etching machine can be adopted to carry out the exposure of respective graphical, and exposure time parameter is 500 milliseconds.
Step 5, development
Appropriate developer for positive photoresist is poured in beaker, the substrate exposed is put into developer solution development 15 ~ 60 seconds (can be dry in softened water cleaning after exposure), and toast 1 minute under 110 degree, removing aqueous vapor (also can adopt to be put on filter paper and dry up with nitrogen High Pressure Gun or dry up with ear washing bulb).
Step 6, function film deposit
As shown in Figure 4: adopt radio frequency (direct current) magnetron sputtering deposition functional membrane, film thickness monitoring is within 50nm
As shown in Figure 6: this manufacturing process is that exposure and the substrate (can adopt silicon chip) after developing are put into vacuum cavity and be evacuated to 5x10
-5pa, argon gas is passed in whole technique, the purity of this argon gas is 99.999%, air pressure is 0.2 Pa, resilient coating (cushioning layer material can adopt tantalum) adopts pulse radiation frequency to deposit at normal temperatures as shielding power supply, sputtering time is 90s, shielding power supply power is 100W, pulse duration be 50%(as shown in Figure 11), then by radio frequency or direct current sputtering deposition NiFe layer (NiFe layer material can adopt Ni0.8Fe0.2), sputtering time is 3min, shielding power supply is 100W, last sedimentary cover (cover layer material can adopt tantalum), sedimentation time is 10s ~ 20s.
The surface topography of the resilient coating that the present invention process as shown in accompanying drawing 7 and 9 and prior art are made, in the present invention, buffer-layer surface roughness is about 0.31nm, and in prior art, buffer-layer surface roughness is about 0.63nm.
As shown in accompanying drawing 8 and 10, the AMR experiment curv of present invention process and prior art processes deposit film, can learn from figure, and present invention process has obvious progress than prior art processes.
The removal (stripping) of step 7, photoresist
As shown in Figure 5:
With the removal of solvents photoresist of not attack metal rete, in the present embodiment, we adopt alcohol and acetone soln.Wafer is invaded bubble in acetone soln, and assisting ultrasonic process, invading the bubble processing time is 3 minutes, then uses deionized water rinsing wafer 30 seconds, finally soaks in alcoholic solution, and auxiliary with excusing from death, and the time is 1 minute, and above step repeats three times.
Through above step, after photoresist is removed, the metal membrane-coating on glue is peeled off, and the metallic pattern making figure is then left, and just obtains the magnetoresistive film that we need.
As shown in Figure 1, the structural representation of this magnetoresistive transducer is that preparation technology of the present invention is made.
Claims (7)
1. the stripping method preparation technology of an anisotropic magnetoresistive chip, it is characterized in that: reserve respective graphical sensing unit groove footpath by photoresist at crystal column surface, adopt radio frequency or magnetically controlled DC sputtering that functional membrane is deposited in graphical sensing unit groove footpath, then use the stripping of photoresist around stripping technology practical function film.
2. the stripping method preparation technology of anisotropic magnetoresistive chip according to claim 1, is characterized in that: it is as follows that this specifically prepares specific embodiment: the stripping of wafer cleaning-wafer-baking-crystal column surface uniform gluing-exposure and development-function film deposition-photoresist.
3. the stripping method preparation technology of anisotropic magnetoresistive chip according to claim 2, it is characterized in that: described cleaning method container loads appropriate acetone, absolute ethyl alcohol, softened water, first wafer is put into acetone, 10 minutes are cleaned at Ultrasonic Cleaning machine, then take out and put into absolute ethyl alcohol immersion completely, finally put into softened water, washes of absolute alcohol is fallen, then with nitrogen High Pressure Gun, wafer is dried up.
4. the stripping method preparation technology of anisotropic magnetoresistive chip according to claim 2, it is characterized in that: described function film sink method be by exposure and development after wafer put into vacuum cavity, argon gas is passed in whole technique, the purity of this argon gas is more than 99.999%, air pressure is 0.2 Pa ~ 0.8Pa, resilient coating adopts pulse radiation frequency to deposit at normal temperatures as shielding power supply, then adopts radio frequency or direct current sputtering deposition NiFe layer, last sedimentary cover.
5. the stripping method preparation technology of anisotropic magnetoresistive chip according to claim 4, is characterized in that: when pulse radiation frequency is as shielding power supply, sputtering time 50 s ~ 90s, power 80 W ~ 150W, and pulse duration is 30% ~ 60%.
6. the stripping method preparation technology of anisotropic magnetoresistive chip according to claim 4, is characterized in that: the deposition rate of resilient coating is 2 ~ 8nm/min.
7. the stripping method preparation technology of anisotropic magnetoresistive chip according to claim 2, it is characterized in that: the stripping technology of glass cement is the removal of solvents photoresist using not attack metal rete, adopt alcohol and acetone soln, wafer is invaded bubble in acetone soln, and assisting ultrasonic process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410150674.XA CN104465985A (en) | 2014-04-16 | 2014-04-16 | Stripping method manufacturing process of anisotropic magnetoresistance chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410150674.XA CN104465985A (en) | 2014-04-16 | 2014-04-16 | Stripping method manufacturing process of anisotropic magnetoresistance chip |
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| Publication Number | Publication Date |
|---|---|
| CN104465985A true CN104465985A (en) | 2015-03-25 |
Family
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| CN201410150674.XA Pending CN104465985A (en) | 2014-04-16 | 2014-04-16 | Stripping method manufacturing process of anisotropic magnetoresistance chip |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216540A (en) * | 2017-06-30 | 2019-01-15 | 中电海康集团有限公司 | MTJ device and its production method |
| CN109599484A (en) * | 2018-10-26 | 2019-04-09 | 西安科汇电子科技有限公司 | A kind of sensor structure and preparation method thereof based on amr effect |
| CN115394761A (en) * | 2022-08-01 | 2022-11-25 | 季华实验室 | Magnetic sensor chip, preparation method thereof and magnetic encoder |
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| US5468595A (en) * | 1993-01-29 | 1995-11-21 | Electron Vision Corporation | Method for three-dimensional control of solubility properties of resist layers |
| US20090081593A1 (en) * | 2001-11-27 | 2009-03-26 | Fujitsu Limited | Method for forming resist pattern and method for manufacturing a semiconductor device |
| CN101692480A (en) * | 2008-05-09 | 2010-04-07 | 南京航空航天大学 | Method for improving stability of bias field in multi-layer membrane structure in Co/Cu/NiFe/FeMn spin valve structure |
| CN101969098A (en) * | 2010-08-11 | 2011-02-09 | 上海腾怡半导体有限公司 | Manufacturing method of magnetic resistance sensor |
| CN102565505A (en) * | 2010-11-15 | 2012-07-11 | 英飞凌科技股份有限公司 | XMR sensors with high shape anisotropy |
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2014
- 2014-04-16 CN CN201410150674.XA patent/CN104465985A/en active Pending
Patent Citations (5)
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|---|---|---|---|---|
| US5468595A (en) * | 1993-01-29 | 1995-11-21 | Electron Vision Corporation | Method for three-dimensional control of solubility properties of resist layers |
| US20090081593A1 (en) * | 2001-11-27 | 2009-03-26 | Fujitsu Limited | Method for forming resist pattern and method for manufacturing a semiconductor device |
| CN101692480A (en) * | 2008-05-09 | 2010-04-07 | 南京航空航天大学 | Method for improving stability of bias field in multi-layer membrane structure in Co/Cu/NiFe/FeMn spin valve structure |
| CN101969098A (en) * | 2010-08-11 | 2011-02-09 | 上海腾怡半导体有限公司 | Manufacturing method of magnetic resistance sensor |
| CN102565505A (en) * | 2010-11-15 | 2012-07-11 | 英飞凌科技股份有限公司 | XMR sensors with high shape anisotropy |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216540A (en) * | 2017-06-30 | 2019-01-15 | 中电海康集团有限公司 | MTJ device and its production method |
| CN109599484A (en) * | 2018-10-26 | 2019-04-09 | 西安科汇电子科技有限公司 | A kind of sensor structure and preparation method thereof based on amr effect |
| CN115394761A (en) * | 2022-08-01 | 2022-11-25 | 季华实验室 | Magnetic sensor chip, preparation method thereof and magnetic encoder |
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Application publication date: 20150325 |
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