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CN114420607B - Micro LED mass transfer and repair device, method and equipment - Google Patents
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CN114420607B - Micro LED mass transfer and repair device, method and equipment - Google Patents

Micro LED mass transfer and repair device, method and equipment Download PDF

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Publication number
CN114420607B
CN114420607B CN202210060400.6A CN202210060400A CN114420607B CN 114420607 B CN114420607 B CN 114420607B CN 202210060400 A CN202210060400 A CN 202210060400A CN 114420607 B CN114420607 B CN 114420607B
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micro led
particles
repair
substrate
adhesive layer
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CN114420607A (en
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黄连恕
董德熙
刘宝华
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Curved Surface Ultra Precision Optoelectronics Shenzhen Co ltd
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Curved Surface Ultra Precision Optoelectronics Shenzhen Co ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0446Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612Production flow monitoring, e.g. for increasing throughput

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Abstract

本发明公开了Micro LED巨量转移和修复装置、方法及其设备;Micro LED巨量转移装置包括原始载台和标载台,及动力部件;微米级视觉传感器摄取原始载台中Micro LED颗粒的分布位置,转换成控制信号输出至ASIC驱动器,对紫外光可逆胶层进行照射,只让有Micro LED颗粒分布的位置具有黏力,其他的位置不具有黏力;然后动力部件带动黏取板至原始载台,直接黏取对应位置的Micro LED颗粒,再移送到目标基板的指定位置。本发明采用微米级视觉传感器,获得Micro LED颗粒的分布位置,再根据分布位置对黏取板中的紫外光可逆胶层进行定向投射曝光,获得精准的可黏贴区域,以此对Micro LED颗粒进行精准黏贴,实现Micro LED颗粒的巨量转移,也可以用于修复时的转移。

Figure 202210060400

The invention discloses a Micro LED mass transfer and repair device, method and equipment; the Micro LED mass transfer device includes an original carrier, a standard carrier, and a power component; a micron-level visual sensor captures the distribution of Micro LED particles in the original carrier The position is converted into a control signal and output to the ASIC driver to irradiate the UV light reversible adhesive layer, so that only the positions where the Micro LED particles are distributed have adhesive force, and other positions have no adhesive force; then the power component drives the adhesive plate to the original position The stage directly sticks the Micro LED particles in the corresponding position, and then transfers them to the designated position of the target substrate. The present invention uses a micron-level vision sensor to obtain the distribution position of the Micro LED particles, and then directional projection exposure is performed on the UV reversible adhesive layer in the sticking plate according to the distribution position to obtain a precise stickable area, so that the Micro LED particles Precise pasting can achieve massive transfer of Micro LED particles, and can also be used for transfer during repair.

Figure 202210060400

Description

Micro LED huge transfer and repair device, method and equipment
Technical Field
The invention relates to a Micro LED bulk transfer device, in particular to a Micro LED bulk transfer and repair device, a method and equipment thereof.
Background
Due to the very small size of the micro leds (between 6 and 20 microns), transfer from the micro led wafer to the target substrate becomes very difficult, especially if the damaged or bad micro led chips are to be inspected and repaired on the same equipment.
According to the search keyword "name, abstract, claim + (micro and bad and repair)" there are 4 relevant patent documents. One of the methods is a Micro-LED chip dead pixel repairing method, which has a main groove and a backup groove in each sub-pixel region of a substrate, and is not always reliable in implementation.
Therefore, the present inventors considered necessary to develop a new micro led transfer device which can be used for both bulk transfer and small transfer for repair. Making it also useful for integrated Micro-LED production equipment.
Disclosure of Invention
The present invention is directed to solving the above-mentioned problems of the prior art, and provides a Micro LED bulk transfer and repair apparatus, method and device.
The purpose of the invention is realized by the following technical scheme:
the invention discloses a Micro LED bulk transfer device, which comprises an original carrying platform carrying Micro LED particles, a target carrying platform carrying a target substrate, and power parts arranged on the side edges of the original carrying platform and the target carrying platform; the original carrying platform is a huge carrying platform and is provided with a wafer of Micro LEDs or a storage disc with the arranged Micro LEDs; the system comprises an original carrying platform, a micro-scale vision sensor arranged above the original carrying platform, a transfer control circuit connected with the micro-scale vision sensor, an ASIC driver connected with the transfer control circuit, an LED array plate connected with the ASIC driver and a lens array arranged on the front side of the LED array plate; the movable end of the power component is provided with a sticking plate, and the sticking plate is provided with an ultraviolet reversible adhesive layer; the micron-scale vision sensor captures the distribution position of Micro LED particles in the original carrier, converts the distribution position into an image signal and transmits the image signal to the transfer control circuit; then the signal is converted into a control signal and output to the ASIC driver after being processed by the transfer control circuit; the ASIC driver drives the LED array plate to display the same image signals, and irradiates the ultraviolet reversible adhesive layer through the lens array, so that only the position where the Micro LED particles are distributed has adhesive force, and other positions do not have adhesive force; and then the power component drives the sticking plate to the original carrying platform, directly sticks the Micro LED particles at the corresponding position, transfers the Micro LED particles to the specified position of the target substrate, and is stuck by the anisotropic conductive film arranged on the surface of the target substrate, the adhesion force between the Micro LED particles and the anisotropic conductive film is larger than that between the Micro LED particles and the ultraviolet light reversible adhesive layer, the power component moves upwards, the separation of the ultraviolet light reversible adhesive layer and the Micro LED particles is realized, and the Micro LED particles are transferred to the target substrate.
Preferably, the movable end of power unit with glue and be equipped with the adhesion force sensor between getting the board, in glue when getting board and Micro LED granule separation, detect out glue the surface adhesion force of getting the board, when the detected value is less than the setting value, right glue the reversible glue film of ultraviolet ray on getting the board surface and change.
The invention discloses a Micro LED bulk transfer method, which adopts the Micro LED bulk transfer device and comprises the following steps of:
the step of reducing the adhesive force is to irradiate the area, which is not included by the distribution device of the previous huge transfer, of the distribution position of the Micro LED particles of the previous huge transfer by the ultraviolet light with the wavelength of 400nm at 280-;
and the step of replacing the ultraviolet reversible glue layer is that the movable end of the power component and the adhesive are provided with a viscous force sensor between the plates, the viscous force sensor detects the surface viscosity of the adhesive plate when the adhesive plate is separated from the Micro LED particles, and the adhesive plate is replaced by the ultraviolet reversible glue layer on the surface of the adhesive plate when the detection value is lower than the set value.
The invention discloses a Micro LED repairing device, which comprises an original carrying platform carrying Micro LED particles, a target carrying platform carrying a target substrate, and power parts arranged on the side edges of the original carrying platform and the target carrying platform; the original carrying platform is a good product carrying platform and is provided with Micro LED good product particles; the target carrying platform is a repairing carrying platform and is used for repairing Micro LED particles; the target substrate is a substrate to be repaired; the system also comprises a micron-sized vision sensor arranged above the original carrying platform, a repair transfer control circuit connected with the micron-sized vision sensor, an ASIC driver connected with the repair transfer control circuit, an LED array plate connected with the ASIC driver and a lens array arranged on the front side of the LED array plate; the movable end of the power component is provided with a sticking plate, and the sticking plate is provided with an ultraviolet reversible adhesive layer; the micron-sized vision sensor captures the distribution position of Micro LED dead pixel particles in the repairing microscope carrier, converts the distribution position into an image signal and transmits the image signal to the repairing transfer control circuit; then the control signal is converted into a control signal and output to the ASIC driver after being processed by the repair transfer control circuit; the ASIC driver drives the LED array plate to display two same image signals, and the ultraviolet light reversible adhesive layer is irradiated through the lens array, so that only the positions where Micro LED dead pixel particles are distributed have adhesive force, and other positions do not have adhesive force; one of the image signals generates a viscosity distribution area for adhering Micro LED dead pixel particles, and the other image signal generates a viscosity distribution area for adhering Micro LED good product particles; then the power part drives the sticking plate to the repairing carrier, directly sticks Micro LED dead pixel particles at corresponding positions, transfers the particles to the upper side of the good product carrier, sticks the Micro LED good product particles to be sent to the positions of the Micro LED dead pixel particles of the repairing carrier, and is stuck by the nano conductive silver paste arranged on the surfaces of the Micro LED dead pixel particles, the adhesion force between the Micro LED good product particles and the nano conductive silver paste is larger than that between the Micro LED good product particles and the ultraviolet light reversible adhesive layer, the power part moves upwards to realize the separation of the ultraviolet light reversible adhesive layer and the Micro LED good product particles, and the Micro LED good product particles are transferred to the substrate to be repaired; the repairing carrying platform is also provided with a lighting fixture for lighting the substrate to be repaired.
Preferably, the repair transfer control circuit accumulates the adhesion force distribution area for adhering Micro LED dead pixel particles, and sends a signal for replacing the ultraviolet light reversible adhesive layer when the concentration of the adhesion force distribution area reaches a set value of the ultraviolet light reversible adhesive layer of the adhering plate.
The Micro LED repairing method adopts the repairing device; comprises a step of reducing the adhesive force, a step of removing and a step of moving the irradiation position:
the step of reducing the adhesive force is to irradiate the area, which is not included by the distribution device of the current restoration transfer, of the distribution position of the Micro LED particles of the previous restoration transfer by ultraviolet light with the wavelength of 280-400nm during the second restoration transfer, so that the adhesive force is reduced;
the removing step is that the provided micron-sized vision sensor for repairing shoots the position of Micro LED dead pixel particles to obtain dead pixel image signals, and then ultraviolet light generated by the LED array plate is used for correspondingly irradiating the ultraviolet light reversible adhesive layer according to the dead pixel image signals, so that the corresponding position obtains the adhesive force, the ultraviolet light reversible adhesive layer is attached to the substrate to be repaired, and the Micro LED dead pixel particles are adhered and removed;
and the irradiation position moving step is to perform irradiation on the ultraviolet light reversible glue layer at a position different from the position at which the Micro LED good product particles are picked up last time when the Micro LED good product particles are picked up for the second time.
The invention discloses Micro LED bulk transfer, detection and repair equipment, which comprises a bulk transfer device, a detection device and a repair device, wherein bases of the bulk transfer device, the detection device and the repair device are connected together; the huge transfer device is the Micro LED huge transfer device; the repairing device is the Micro LED repairing device.
Preferably, the detection device comprises a detection station arranged on the base, a lighting fixture arranged on the side edge of the detection station and used for lighting Micro LED particles arranged on the target substrate, and a micron-sized visual sensor for detection arranged above the detection station; the target substrate is taken away by a detection power component when the target substrate is qualified after being detected after sliding from the bulk transfer device to the detection station; when Micro LED dead pixel particles are detected, the target substrate is conveyed to the repairing carrying platform by the detection power component to become the substrate to be repaired.
Preferably, the repairing carrier is further provided with an ultralow temperature probe positioned below the substrate to be repaired, and the ultralow temperature probe is pressed and contacted with the Micro LED dead pixel particles to eliminate the adhesion of the anisotropic conductive adhesive film; the diameter of the ultra-low temperature probe is close to 20-30 μm; the Micro-scale repairing visual sensor is further arranged to shoot the positions of the Micro LED dead pixel particles to obtain dead pixel image signals, and then the ultraviolet light generated by the LED array plate is used for correspondingly irradiating the ultraviolet light reversible adhesive layer according to the dead pixel image signals, so that the corresponding positions obtain the adhesive force, the ultraviolet light reversible adhesive layer is used for being attached to the substrate to be repaired, and the Micro LED dead pixel particles are adhered and removed; the repairing device is further provided with a conductive silver paddle rod located above the to-be-repaired substrate, the tail end of the conductive silver paddle rod is stained with nano conductive silver paste, and the conductive silver paddle rod conducts smearing of the nano conductive silver paste on the position of the Micro LED dead pixel particles.
Preferably, a repair power component arranged on the repair device utilizes the adhesion plate to adhere corresponding Micro LED good-product particles from the original carrier according to the dead pixel image signal, and the particles are implanted to the position of the Micro LED dead pixel particles of the to-be-repaired substrate of the repair carrier; the repairing carrier is provided with a mesh layer for bearing the substrate to be repaired, the ultralow temperature probe penetrates through the mesh layer and is pressed below the Micro LED dead pixel particles at the temperature lower than-70 ℃ so as to remove the adhesive force between the Micro LED dead pixel particles and the substrate to be repaired; and a horizontal plane driving part for driving the mesh layer to avoid the blocking of the ultra-low-temperature probe by the solid portion of the mesh layer.
The invention also discloses another Micro LED bulk transfer, detection and repair device, which comprises a bulk transfer unit, a detection unit and a dead pixel repair unit;
the bulk transfer unit comprises a first machine table, a first mechanical arm, a bulk transfer device, a substrate transfer device, a silicon wafer fixing device, a precision positioning device and a substrate fixing device; the substrate is arranged on the substrate fixing device; the silicon wafer fixing device and the substrate fixing device are respectively arranged on the feeding end and the discharging end of the first machine table; the huge transfer device is arranged between the silicon wafer fixing device and the substrate fixing device, and an ultraviolet reversible adhesive layer capable of adjusting adhesive force is arranged on the huge transfer device; the precision positioning device is arranged on the massive transfer device; the first mechanical arm is arranged on one side of the silicon wafer fixing device and used for controlling incoming materials; the substrate transfer device is arranged on one side of the substrate fixing device and used for controlling discharging.
The detection unit comprises a machine table II, a mechanical arm II, a substrate to be detected, a lighting detection device, a lighting action device, a lighting position finding device, a lighting control device and a lighting capture device; the lighting control device and the lighting action device are arranged at the feeding end of the machine platform II; the substrate to be detected is arranged on the lighting control device; the lighting detection device is arranged on the lighting action device; the lighting position measuring device is arranged on the lighting detection device; the lighting capture device is arranged on the lighting position finding device; and the second mechanical arm is arranged at the discharge end of the second machine table and used for taking out qualified products.
The dead pixel repairing unit comprises a machine table III, a mechanical arm III, an upper heating device, a repairing action device, a defective substrate, an implanting device, a repairing transfer assembly, a repairing silicon wafer fixing device and a lower heating device; the lower heating device and the repairing action device are arranged on one side of the machine table III close to the machine table II; the defective substrate is arranged on the lower heating device; the upper heating device and the implantation device are arranged on the repair action device; the repairing silicon wafer fixing device is arranged on one side of the machine platform III, which is far away from the machine platform II; the repairing transfer assembly is arranged between the repairing silicon wafer fixing device and the repairing action device; and the third mechanical arm is arranged on one side of the silicon wafer repairing and fixing device and used for feeding the repaired silicon wafer.
Preferably, the mass transfer unit, the detection unit and the dead pixel repair unit are of an integrated structure.
Preferably, the first machine table is provided with a first sliding rail; the substrate fixing device is arranged on the first sliding rail in a sliding mode.
Preferably, a machine vision system is arranged on the precision positioning device and comprises a high-definition lens and a CCD camera, and the recognition precision reaches below 6 microns.
Preferably, the machine vision system is a system which is formed by identifying a wafer of Micro LEDs or a storage disc with the arranged Micro LEDs, converting an image distributed by LED chips into a digital signal after image signal processing and algorithm so as to match with an ASIC (application specific integrated circuit) driving chip, LED lenses arranged in an array, a rotating mirror and a scanning system.
Preferably, the bulk transfer device is projected through the machine vision system, so that the ultraviolet light reversible adhesive layer with the distribution area of the Micro LEDs has adhesive force, and the adhesive force does not exist at other positions.
Preferably, a second sliding rail is arranged on the second machine table; the second sliding rail is arranged between the first machine platform and the third machine platform; the lighting control device is arranged on the second slide rail in a sliding mode.
Preferably, the repairing and transferring assembly comprises a first repairing and transferring device, a second repairing and transferring device, a particle fixing device, a third sliding rail, a fourth sliding rail and a first mounting rack; the third sliding rail is arranged on the third machine table and is positioned below the repair action device; the first repairing and transferring device is arranged on the third sliding rail in a sliding mode; the first mounting frame is arranged above the second sliding rail and is positioned between the repairing action device and the third mechanical arm; the second sliding rail is arranged on the first mounting frame; the repairing and transferring device II is arranged on the sliding rail II in a sliding mode; and the first repairing and transferring device and the second repairing and transferring device are both provided with particle fixing devices.
Preferably, the repairing silicon wafer fixing device is provided with a repairing silicon wafer fixing action device.
Preferably, the first machine table is provided with a second mounting frame; a fourth sliding rail is arranged on the second mounting frame; the bulk transfer device and the substrate transfer device are arranged on the fourth slide rail in a sliding manner.
Compared with the prior art, the invention has the beneficial effects that: according to the Micro LED transfer device, the micron-sized vision sensor is adopted to obtain the distribution positions of the Micro LED particles, the ASIC driver is used for driving the LED array plate, the ultraviolet reversible adhesive layer in the sticking plate is subjected to directional projection exposure through the lens array to obtain a precise sticking area, and then the Micro LED particles are precisely stuck, so that the transfer of the Micro LED particles is realized, and the Micro LED transfer device can be used for transferring a large amount of carrier change and a small amount of carrier repair. Furthermore, the adhesive force of the ultraviolet light reversible adhesive layer is obtained by adopting an adhesive force sensor and utilizing the separation action, so that a new ultraviolet light reversible adhesive layer is replaced in time, and the production efficiency is improved. The Micro LED transfer integrated equipment provided by the invention utilizes a huge transfer device, a detection device and a repair transfer device which are connected together by a base to form compact equipment, so that the efficiency of the equipment is greatly improved; the efficiency and yield are higher, the cost is lower, and the process is simpler; and through material science and technology, the huge transfer, detection and repair work of the very difficult Micro LED can be completed very quickly and effectively, and the rapid and vigorous development of the Micro LED display industry can be promoted.
Drawings
FIG. 1 is a schematic structural diagram of a first embodiment of the Micro LED transfer device (power components are a multi-axis rotary robot structure, and LED display boards are arranged on the side);
FIG. 2 is a schematic structural view of a second embodiment of the Micro LED transfer device of the present invention (the power unit is a slide rail type mechanical arm structure, and the LED display board is placed upward);
FIG. 3 is a block circuit diagram of the embodiment of FIGS. 1 and 2;
FIG. 4 is a schematic structural diagram of a first embodiment of a Micro LED bulk transfer, detection and repair apparatus according to the present invention;
FIG. 5 is an enlarged view of a portion of the prosthetic transfer device of FIG. 4;
FIG. 6 is a circuit block diagram of the embodiment of FIG. 4;
FIG. 7 is a front view of another embodiment of a Micro LED bulk transfer, inspection and repair apparatus of the present invention;
FIG. 8 is a top view of another embodiment of a Micro LED bulk transfer, inspection and repair apparatus of the present invention;
FIG. 9 is a schematic perspective view of another embodiment of a Micro LED bulk transfer, inspection and repair apparatus according to the present invention.
Reference numbers of fig. 1-6:
s transfer device S1 bulk transfer device
S2 prosthetic devices Q detection device
11 original stage 12 Micro LED particle
21 target stage 22 target substrate
31 power part 32 sticking plate
40 transfer control circuit 41 micron-scale vision sensor
42 ASIC driver 421 array plate
422 lens array 50 inspection station
51 lighting fixture 52 micron-scale detection vision sensor
53 detect slide rail 54 and detect power part
60 repair stage 61 substrate to be repaired
Visual sensor for 62 ultralow temperature probe 63 micron-scale repair
64 conductive silver paddle 65 repair power component
66 good product carrier 67 mesh layer
70 master controller 120 Micro LED original carrier
220 anisotropic conductive film 500 detection control circuit
600 repair transfer control circuit 69 Micro LED good product particles
31A power component
Reference numerals of fig. 7-9:
1. a bulk transfer unit; 2. a detection unit; 3. a dead pixel repairing unit; 4. a control system; 01. A first machine platform; 02. a second machine platform; 03. a third machine platform; 04. a first mechanical arm; 05. a second mechanical arm; 06. A mechanical arm III; 104. a bulk transfer device; 105. a substrate; 106. a substrate transfer device; 107. a silicon wafer fixing device; 108. a precision positioning device; 109. a substrate fixing device; 201. a substrate to be detected; 202. a lighting detection device; 203. a lighting operation device; 204. lighting the position measuring device; 205. a lighting control device; 206. illuminating the capture device; 301. an upper heating device; 302. a repair operation device; 303. a defective substrate; 304. an implant device; 305. repairing the first transfer device; 306. repairing and transferring the second device; 307. repairing the silicon wafer fixing device; 311. repairing the silicon chip fixing action device; 312. a lower heating device; 313. and (4) a particle fixing device.
Detailed Description
The technical solutions of the present invention will be described clearly and completely through the following embodiments, which are only some, but not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the embodiments of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the embodiments of the invention. As used in the description of the embodiments of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
It is emphasized in particular that the construction shown in the figures is a schematic representation after enlargement, the enlargement scale of the individual parts differing from one another in order to more clearly show the principle of the construction of the device according to the invention in operation.
As shown in fig. 1-3, the Micro LED transfer device S of the present invention includes an original stage 11 carrying Micro LED particles 12, a target stage 21 carrying a target substrate 22, and a power component 31 disposed at the side of the original stage 11 and the target stage 21; the system also comprises a micron-scale vision sensor 41 arranged above the original carrier 11, a transfer control circuit 40 connected with the micron-scale vision sensor 41, an ASIC driver 42 connected with the transfer control circuit 40, an LED array plate 421 connected with the ASIC driver 42, and a lens array 422 arranged on the front side of the LED array plate 421; the movable end of the power component 31 is provided with an adhesion plate 32, and the adhesion plate 32 is provided with an ultraviolet reversible adhesive layer 321; the micron-sized vision sensor 41 captures the distribution position of Micro LED particles in the original carrier 11, converts the distribution position into an image signal and transmits the image signal to the transfer control circuit 40; then, the signal is processed by the transfer control circuit 40 and converted into a control signal to be output to the ASIC driver 42; the ASIC driver 42 drives the LED array board 421 to display the same image signal, and irradiates the ultraviolet reversible adhesive layer through the lens array 422, so that only the position where the Micro LED particles are distributed has adhesive force, and the other positions do not have adhesive force; then, the power component 31 drives the adhering plate 32 to the original carrying stage 11, Micro LED particles at corresponding positions are directly adhered and taken, the Micro LED particles are transferred to the specified position of the target substrate 22 and adhered by the anisotropic conductive film arranged on the surface of the target substrate 22, the adhesion force between the Micro LED particles and the anisotropic conductive film is greater than that between the Micro LED particles and the ultraviolet light reversible adhesive layer, the power component 31 moves upwards, separation of the ultraviolet light reversible adhesive layer and the Micro LED particles is achieved, and the Micro LED particles are transferred to the target substrate 22.
More specifically, the original carrier may be a bulk carrier, a wafer with Micro LEDs or a storage disk with Micro LEDs already arranged. So it is also called Micro LED bulk transfer device.
In other embodiments, a viscosity sensor is disposed between the movable end of the power unit and the adhesion plate, when the adhesion plate is separated from the Micro LED particles, the surface viscosity of the adhesion plate is detected, and when the detection value is lower than a predetermined value, the ultraviolet light reversible adhesive layer on the surface of the adhesion plate is replaced.
The invention also discloses a Micro LED bulk transfer method, which comprises the following steps of:
a step of reducing the adhesive force, in which the adhesive force is reduced when the distribution position of the Micro LED particles which are transferred in the previous huge amount is irradiated by the ultraviolet light with the wavelength of 280-400nm in the area which is not included by the distribution device which is transferred in the current huge amount during the second huge amount transfer;
and (3) replacing the ultraviolet reversible adhesive layer, namely, arranging a viscous force sensor between the movable end of the power component and the sticky plate, detecting the surface viscous force of the sticky plate when the sticky plate is separated from the Micro LED particles, and replacing the ultraviolet reversible adhesive layer on the surface of the sticky plate when the detection value is lower than the set value.
In the embodiment of fig. 1-3, the original carrier may also be a good product carrier, provided with Micro LED good product particles, when used for repair. Become Micro LED prosthetic devices, the concrete structure is:
the target microscope stage is a repairing microscope stage and is used for repairing Micro LED particles; the target substrate is a substrate to be repaired; the system also comprises a micron-sized vision sensor arranged above the original carrying platform, a repair transfer control circuit connected with the micron-sized vision sensor, an ASIC driver connected with the repair transfer control circuit, an LED array plate connected with the ASIC driver and a lens array arranged on the front side of the LED array plate; the movable end of the power component is provided with a sticking plate which is provided with an ultraviolet reversible glue layer; the micron-sized vision sensor captures the distribution position of Micro LED dead pixel particles in the repairing carrier, converts the distribution position into an image signal and transmits the image signal to the repairing transfer control circuit; then the signal is processed by a repair transfer control circuit and is converted into a control signal to be output to an ASIC driver; the ASIC driver drives the LED array plate to display two same image signals, and the ultraviolet reversible adhesive layer is irradiated through the lens array, so that only the positions where Micro LED dead pixel particles are distributed have adhesive force, and other positions do not have adhesive force; one of the image signals generates a viscosity distribution area for adhering Micro LED dead pixel particles, and the other image signal generates a viscosity distribution area for adhering Micro LED good product particles; then the power part drives the adhesion plate to the repair carrier, directly adheres the Micro LED dead pixel particles at the corresponding positions, transfers the particles to the upper part of the good product carrier, adheres the Micro LED good product particles to the Micro LED dead pixel particle positions of the repair carrier, and is adhered by the nano conductive silver paste arranged on the surfaces of the Micro LED dead pixel particle positions, the adhesion force between the Micro LED good product particles and the nano conductive silver paste is larger than that between the Micro LED good product particles and the ultraviolet light reversible adhesive layer, the power part moves upwards to realize the separation of the ultraviolet light reversible adhesive layer and the Micro LED good product particles, and the Micro LED good product particles are transferred to a substrate to be repaired; the repairing carrying platform is also provided with a lighting fixture for lighting the substrate to be repaired.
That is, the structure shown in fig. 1-3 is utilized, but the ultraviolet light reversible glue layer has double functions, and one part of the ultraviolet light reversible glue layer is used for Micro LED dead pixel particles; the other part is used for sticking Micro LED good-product particles. More specifically, the repairing transfer control circuit accumulates the adhesion force distribution area for adhering Micro LED dead pixel particles, and sends out a signal for replacing the ultraviolet light reversible adhesive layer when the concentration of the adhesion force distribution area reaches a set value of the ultraviolet light reversible adhesive layer of the adhering plate.
The Micro LED repairing method adopts the repairing device; comprises a step of reducing the adhesive force, a step of removing and a step of moving the irradiation position:
the step of reducing the adhesive force, which is to irradiate the distribution position of the Micro LED particles which are subjected to the previous restoration transfer and are not contained in the distribution device subjected to the current restoration transfer by ultraviolet light with the wavelength of 280-400nm during the second restoration transfer, so that the adhesive force is reduced;
the method comprises the following steps that a removing step is carried out, wherein a micron-sized vision sensor for repairing is arranged for shooting the position of Micro LED dead pixel particles to obtain dead pixel image signals, then ultraviolet light generated by an LED array plate is utilized for carrying out corresponding irradiation on an ultraviolet light reversible adhesive layer according to the dead pixel image signals, and the corresponding position obtains the adhesive force, so that the ultraviolet light reversible adhesive layer is close to a substrate to be repaired, and the Micro LED dead pixel particles are adhered and removed;
and moving the irradiation position, namely when the particles good for the Micro LED are picked up for the second time, the irradiation position of the ultraviolet light reversible glue layer is different from the position when the particles good for the Micro LED are picked up for the last time.
4-6, the Micro LED bulk transfer, inspection and repair apparatus of the present invention includes a bulk transfer device S1, an inspection device Q and a repair device S2 with bases coupled together; the bulk transfer device S1 is the Micro LED bulk transfer device described above, and the repair device S2 is the Micro LED repair device described above.
More specifically, the detecting device Q includes a detecting station 50 disposed on the base, a lighting fixture 51 disposed on a side of the detecting station 50 and configured to light Micro LED particles disposed on the target substrate, and a micron-level visual sensor 52 disposed above the detecting station 50 for detection.
More specifically, the device further comprises a detection slide rail 53 connected between the bulk transfer device S1 and the detection device Q, and after the target substrate slides to the detection station 50 from the target stage of the bulk transfer device, the target substrate is taken away by the detection power component 54 when the target substrate is qualified through detection; when Micro LED defective particles are detected, the detection power unit 54 is provided to transport the target substrate to the repair stage 60, and the target substrate becomes a substrate to be repaired 61.
More specifically, the repairing carrier 60 is further provided with an ultra-low temperature probe 62 located below the substrate 61 to be repaired, and the ultra-low temperature probe is pressed on the Micro LED dead pixel particles to eliminate the adhesive force of the anisotropic conductive film; the diameter of the ultra-low temperature probe is close to 20-30 μm; the repair carrier 60 is further provided with a lighting jig (not shown) for lighting the substrate 61 to be repaired; the Micro-scale repairing vision sensor 63 is further arranged to shoot positions of Micro LED dead pixel particles to obtain dead pixel image signals, and then the ultraviolet light generated by the LED array plate is used for correspondingly irradiating the ultraviolet light reversible adhesive layer according to the dead pixel image signals, so that the corresponding positions obtain adhesive force, the ultraviolet light reversible adhesive layer is attached to the substrate 61 to be repaired, and the Micro LED dead pixel particles are adhered and removed; the repairing device S2 is further provided with a conductive silver paddle 64 located above the substrate 61 to be repaired, the tail end of the conductive silver paddle 64 is stained with nanometer conductive silver paste, and the conductive silver paddle 64 paints the nanometer conductive silver paste on the Micro LED dead pixel particles.
More specifically, the repair power unit 65 of the repair apparatus S2 picks up the corresponding Micro LED good particles from the original stage (also called the good particle stage 66) by using a pick-up plate according to the bad point image signal, and implants the Micro LED good particles to the position of the Micro LED bad particle on the substrate 61 to be repaired of the repair stage 60.
More specifically, the repairing carrier 60 is provided with a mesh layer 67 for bearing the substrate 61 to be repaired, and the ultra-low temperature probe 62 penetrates through the mesh layer 67 and is pressed below the Micro LED dead particles at a temperature lower than-70 ℃ to release the adhesion between the Micro LED dead particles and the target substrate. And a horizontal plane driving part for driving the mesh layer to avoid the blocking of the ultra-low temperature probe by the solid portion of the mesh layer. After the repaired substrate 61 is repaired, the substrate is sent back to the detection device, the lighting fixture is connected again, the lighting test is carried out to confirm that the repairing work is completed smoothly, and after the detection is correct, the substrate is transferred to the next qualified process by the detection power part.
In order to realize the integrated operation of the bulk transfer apparatus, the detection apparatus, and the repair apparatus, an overall controller 70 is further required to cooperatively control the bulk transfer apparatus, the detection apparatus, and the repair apparatus.
Fig. 7-9 also disclose other embodiments of a Micro LED bulk transfer, detection and repair device of the present invention, which are specifically described as follows:
example one
As shown in fig. 7, the Micro LED huge transferring, detecting and repairing apparatus provided by the present invention includes a huge transferring unit 1, a detecting unit 2, a dead pixel repairing unit 3 and a control system 4.
As shown in fig. 8-9, the bulk transfer unit 1 includes a first machine table 01, a first robot arm 04, a bulk transfer device 104, a substrate 105, a substrate transfer device 106, a silicon wafer fixing device 107, a precision positioning device 108, and a substrate fixing device 109; the substrate 105 is disposed on the substrate fixture 109; the silicon wafer fixing device 107 and the substrate fixing device 109 are respectively arranged on the feeding end and the discharging end of the first machine table 01; the bulk transfer device 104 is arranged between the silicon wafer fixing device 107 and the substrate fixing device 109, and an ultraviolet light reversible adhesive layer capable of adjusting adhesive force is arranged on the bulk transfer device 104; the precision positioning device 108 is disposed on the bulk transfer device 104; the mechanical arm I04 is arranged on one side of the silicon wafer fixing device 107 and used for controlling incoming materials; the substrate transfer device 106 is disposed at one side of the substrate fixing device 109 for controlling discharging.
As shown in fig. 8-9, the detection unit 2 includes a second machine station 02, a second robot arm 05, a substrate 201 to be detected, a lighting detection device 202, a lighting action device 203, a lighting position measurement device 204, a lighting control device 205, and a lighting capture device 206; the lighting control device 205 and the lighting action device 203 are arranged on the feeding end of the second machine station 02; the substrate 201 to be detected is arranged on the lighting control device 205; the lighting detection device 202 is provided in the lighting operation device 203; the lighting position detector 204 is provided in the lighting detector 202; the lighting capture device 206 is disposed on the lighting position finding device 204; the second mechanical arm 05 is arranged at the discharge end of the second machine table 02 and used for taking out qualified products.
As shown in fig. 8-9, the defective pixel repairing unit 3 includes a third machine table 03, a third robot arm 06, an upper heating device 301, a repairing action device 302, a defective substrate 303, an implanting device 304, a repairing transfer component, a repairing silicon wafer fixing device 307, and a lower heating device 312; the lower heating device 312 and the repair action device 302 are arranged on one side of the third machine platform 03 close to the second machine platform 02; the defective substrate 303 is disposed on the lower heating device 312; the upper heating device 301 and the implantation device 304 are arranged on the repair action device 302; the repairing silicon wafer fixing device 307 is arranged on one side, far away from the second machine station 02, of the third machine station 03; the repair transfer assembly is arranged between the repair silicon wafer fixing device 307 and the repair action device 302; and the mechanical arm III 06 is arranged on one side of the silicon wafer repairing fixing device 307 and is used for feeding the repaired silicon wafer.
Example two
As shown in fig. 7, the Micro LED bulk transfer, detection and repair device provided by the present invention includes a bulk transfer unit 1, a detection unit 2, a dead pixel repair unit 3 and a control system 4. The mass transfer unit 1, the detection unit 2 and the dead pixel repair unit 3 are of an integrated structure.
As shown in fig. 8-9, the bulk transfer unit 1 includes a first machine table 01, a first robot arm 04, a bulk transfer device 104, a substrate 105, a substrate transfer device 106, a silicon wafer fixing device 107, a precision positioning device 108, and a substrate fixing device 109; the substrate 105 is disposed on the substrate fixture 109; the silicon wafer fixing device 107 and the substrate fixing device 109 are respectively arranged on the feeding end and the discharging end of the first machine table 01; the huge transfer device 104 is arranged between the silicon wafer fixing device 107 and the substrate fixing device 109, and an ultraviolet reversible adhesive layer capable of adjusting adhesive force is arranged on the huge transfer device 104; the precision positioning device 108 is disposed on the bulk transfer device 104; the mechanical arm I04 is arranged on one side of the silicon wafer fixing device 107 and used for controlling incoming materials; the substrate transfer device 106 is disposed at one side of the substrate fixing device 109 for controlling discharging.
More specifically, a first slide rail is arranged on the first machine table 01; the substrate positioning device 109 is slidably disposed on the first slide rail.
More specifically, the precision positioning device 108 is provided with a machine vision system, which includes a high-definition lens and a CCD camera, and the recognition precision reaches below 6 microns. The machine vision system is a system which is formed by identifying a wafer of Micro LEDs or a storage disc with the arranged Micro LEDs, converting images distributed by LED chips into digital signals after image signal processing and algorithm so as to match with an ASIC (application specific integrated circuit) driving chip, LED lenses arranged in an array, a rotating mirror and a scanning system.
More specifically, the bulk transfer device 104 is projected through the machine vision system such that the UV-curable adhesive layer with Micro LED distribution areas has adhesive properties and no adhesive properties at other locations.
More specifically, a mounting frame II is arranged on the machine table I01; a fourth sliding rail is arranged on the second mounting rack; the bulk transfer device 104 and the substrate transfer device 106 are slidably disposed on the fourth slide rail.
As shown in fig. 8 to 9, the inspection unit 2 includes a second machine base 02, a second robot arm 05, a substrate 201 to be inspected, a lighting inspection device 202, a lighting operation device 203, a lighting position finding device 204, a lighting control device 205, and a lighting capture device 206; the lightening control device 205 and the lightening action device 203 are arranged on the feeding end of the second marble machine platform 02; the substrate 201 to be detected is arranged on the lighting control device 205; the lighting detection device 202 is provided in the lighting operation device 203; the lighting position detector 204 is provided in the lighting detector 202; the lighting capture device 206 is disposed on the lighting position finding device 204; the second mechanical arm 05 is arranged at the discharging end of the second machine table 02 and used for taking out qualified products.
More specifically, a second sliding rail is arranged on the second machine station 02; the second sliding rail is arranged between the first machine station 01 and the third machine station 03; the lighting control device 205 is slidably disposed on the second slide rail.
As shown in fig. 8-9, the defective pixel repairing unit 3 includes a third machine table 03, a third robot arm 06, an upper heating device 301, a repairing action device 302, a defective substrate 303, an implanting device 304, a repairing transfer component, a repairing silicon wafer fixing device 307, and a lower heating device 312; the lower heating device 312 and the repair action device 302 are arranged on one side of the third machine platform 03 close to the second machine platform 02; the defective substrate 303 is disposed on the lower heating device 312; the upper heating device 301 and the implantation device 304 are arranged on the repair action device 302; the repairing silicon wafer fixing device 307 is arranged on one side, far away from the second machine station 02, of the third machine station 03; the repairing transfer component is arranged between the repairing silicon chip fixing device 307 and the repairing action device 302; and the mechanical arm III 06 is arranged on one side of the repairing silicon wafer fixing device 307 and is used for feeding the repairing silicon wafer.
More specifically, the repair transfer assembly comprises a first repair transfer device 305, a second repair transfer device 306, a particle fixing device 313, a third slide rail, a fourth slide rail and a first mounting rack; the third sliding rail is arranged on the third machine table 03 and is positioned below the repair action device 302; the first repairing and transferring device 305 is arranged on the third sliding rail in a sliding mode; the first mounting rack is arranged above the second sliding rail and is positioned between the repairing action device 302 and the third mechanical arm 06; the second sliding rail is arranged on the first mounting frame; the second repairing and transferring device 306 is arranged on the second sliding rail in a sliding mode; particle fixing devices 313 are arranged on the first repair transfer device 305 and the second repair transfer device 306.
More specifically, the repair silicon wafer fixing device 307 is provided with a repair silicon wafer fixing actuator 311.
The invention firstly identifies the wafer of the Micro LED or the storage disc arranged with the Micro LED by a machine vision system (lens + CCD) with high resolution and clear identification below 6 microns, converts the image distributed by the LED chip into a digital signal after image signal processing and algorithm, and then projects the digital signal on the surface of ultraviolet reversible adhesive (also called as light reversible adhesive) of a bulk transfer device 104 by matching with a system formed by an ASIC driving chip, LED lenses arranged in an array, a rotating mirror and a scanning system, only the position where the Micro LED is distributed has adhesive force, and other positions have no adhesive force, then directly sticks the Micro LED at the corresponding position of a silicon chip fixing device 107, and moves to the specified position of a target substrate 105 after the adhesion is finished, so as to carry out bulk transfer. After the transfer is complete, the bulk transfer device 104 automatically returns to the home position to be ready to re-identify the next Micro LED wafer or aligned storage disk. At this moment, machine vision recognition is carried out again, if the distribution position of the Micro LEDs is different from the previous time, the equipment can adjust the adhesion force of the surface of the adhesion mechanism according to the corresponding position and by utilizing ultraviolet light with two different wavelengths, and then the chip is adhered and taken and a huge amount of transfer is completed.
The substrate transfer device 106 transfers the Micro LED chips on the substrate 105. The lighting detection device 202, the lighting operation device 203, the lighting position measuring device 204, and the lighting control device 205 cooperate to perform a lighting test. This in-process is through accurate optical measurement device and accurate mechanical transmission, grating positioner, control system, and it can light to reach the locating position, then fixes a position dead center and makes system position mark through optical detection device, and qualified product of lighting shifts to outside the equipment through second 05 arms, and bad product moves to on the bad base plate 303. The method comprises the steps of firstly, carrying out desoldering on bad Micro LED particles by using a tiny ultralow-temperature probe (which can reach a low temperature below-70 ℃), removing the adhesive force of an anisotropic conductive adhesive film, then, allowing the surface of an adhesion mechanism to have the adhesive force only on the position of a bad Micro LED through an ultraviolet light control system, and pulling out the bad Micro LED chip. The upper heating device 301 and the lower heating device 312 heat the precision holes. The repair transfer assembly transfers the good Micro LED particles from the repair wafer fixture 307 to the removed position, and then the conductive silver paste is applied again. So just accomplish Micro LED's repair work, connect the tool of lighting again after restoreing, light the test in order to confirm that repair work is accomplished smoothly.
In summary, according to the Micro LED transfer device of the present invention, the micron-sized vision sensor is adopted to obtain the distribution position of the Micro LED particles, the ASIC driver is then used to drive the LED array board, and the lens array is used to perform directional projection exposure on the ultraviolet reversible adhesive layer in the pasting board to obtain a precise pasting area, so as to precisely paste the Micro LED particles, thereby realizing the transfer of the Micro LED particles, which can be used for a large amount of transfer when the carrier changes, and can also be used for a small amount of transfer when the carrier is repaired. Furthermore, the adhesive force of the ultraviolet light reversible adhesive layer is obtained by adopting an adhesive force sensor and utilizing the separation action, so that a new ultraviolet light reversible adhesive layer is replaced in time, and the production efficiency is improved. The Micro LED transfer integrated equipment provided by the invention utilizes a huge transfer device, a detection device and a repair transfer device which are connected together by a base to form compact equipment, so that the efficiency of the equipment is greatly improved; the efficiency and yield are higher, the cost is lower, and the process is simpler; and through material science and technology, the huge transfer, detection and repair work of the very difficult Micro LED can be completed very quickly and effectively, and the rapid and vigorous development of the Micro LED display industry can be promoted.
The technical contents of the present invention are further illustrated by the examples only for the convenience of the reader, but the embodiments of the present invention are not limited thereto, and any technical extension or re-creation based on the present invention is protected by the present invention. The protection scope of the invention is subject to the claims.

Claims (10)

1.Micro LED巨量转移装置,包括承载有Micro LED颗粒的原始载台和承载有目标基板的目标载台,及设于所述原始载台和所述目标载台侧边的动力部件;其特征在于所述原始载台为巨量载台,设有Micro LED的晶圆片或是已经排列好Micro LED的储存盘;还包括设于所述原始载台上方的微米级视觉传感器,与所述微米级视觉传感器连接的转移控制电路,与所述转移控制电路连接的ASIC驱动器,与所述ASIC驱动器连接的LED阵列板,及设于所述LED阵列板前侧的透镜阵列;所述动力部件的活动端设有黏取板,所述黏取板设有紫外光可逆胶层;所述微米级视觉传感器摄取所述原始载台中Micro LED颗粒的分布位置,并转换成图像信号传送至所述转移控制电路;再经所述转移控制电路的处理,转换成控制信号输出至所述ASIC驱动器;所述ASIC驱动器驱动所述LED阵列板,以显示相同图像信号,并通过透镜阵列,对所述紫外光可逆胶层进行照射,只让有Micro LED颗粒分布的位置具有黏力,其他的位置不具有黏力;然后所述动力部件带动所述黏取板至所述原始载台,直接黏取对应位置的Micro LED颗粒,再移送到目标基板的指定位置,被所述目标基板表面设有的异方性导电胶膜黏住,且Micro LED颗粒与异方性导电胶膜之间的黏力大于Micro LED颗粒与所述紫外光可逆胶层之间的黏力,所述动力部件向上移动,实现所述紫外光可逆胶层与Micro LED颗粒的分离,Micro LED颗粒被转移至所述目标基板。1. Micro LED mass transfer device, comprising an original stage carrying Micro LED particles and a target stage carrying a target substrate, and a power component arranged on the sides of the original stage and the target stage; which It is characterized in that the original stage is a massive stage, which is provided with a wafer of Micro LEDs or a storage disk with Micro LEDs already arranged; it also includes a micron-level vision sensor arranged above the original stage, which is connected with all the micro-LEDs. The transfer control circuit connected with the micron-level vision sensor, the ASIC driver connected with the transfer control circuit, the LED array board connected with the ASIC driver, and the lens array arranged on the front side of the LED array board; the power component The movable end is provided with a sticking plate, and the sticking plate is provided with a UV light reversible adhesive layer; the micron-level vision sensor captures the distribution position of the Micro LED particles in the original stage, and converts it into an image signal and transmits it to the transfer control circuit; then processed by the transfer control circuit, converted into a control signal and output to the ASIC driver; the ASIC driver drives the LED array board to display the same image signal, and through the lens array, to the The UV light reversible adhesive layer is irradiated, so that only the locations where the Micro LED particles are distributed have adhesive force, and other locations do not have adhesive force; then the power component drives the sticking plate to the original stage, and directly sticks The Micro LED particles at the corresponding position are then moved to the designated position of the target substrate, and are adhered by the anisotropic conductive adhesive film provided on the surface of the target substrate, and the adhesive force between the Micro LED particles and the anisotropic conductive adhesive film Greater than the adhesive force between the Micro LED particles and the UV light reversible adhesive layer, the power component moves upward to realize the separation of the UV light reversible adhesive layer and the Micro LED particles, and the Micro LED particles are transferred to the target substrate . 2.根据权利要求1所述的Micro LED巨量转移装置,其特征在于所述动力部件的活动端与所述黏取板之间设有黏力传感器,于所述黏取板与Micro LED颗粒分离时,检测出所述黏取板的表面黏力,当检测值低于设定值时,对所述黏取板表面的紫外光可逆胶层进行更换。2 . The Micro LED mass transfer device according to claim 1 , wherein an adhesive force sensor is arranged between the movable end of the power component and the sticking board, and the sticking board and the Micro LED particles are arranged between the sticking board and the Micro LED particles. 3 . During separation, the surface adhesive force of the sticking plate is detected, and when the detected value is lower than the set value, the ultraviolet light reversible adhesive layer on the surface of the sticking plate is replaced. 3.Micro LED巨量转移方法,其特征在于采用权利要求1所述的Micro LED巨量转移装置,包括黏力下降步骤和更换紫外光可逆胶层步骤:3. Micro LED mass transfer method, characterized in that the Micro LED mass transfer device according to claim 1 is adopted, comprising a viscosity reduction step and a UV light reversible adhesive layer replacement step: 所述黏力下降步骤,是针对第二次巨量转移时,上一次巨量转移的Micro LED颗粒分布位置未被本次巨量转移的分布装置包含的区域,被280-400nm的紫外光照射,黏力下降;The viscosity reduction step is aimed at the second mass transfer, where the distribution position of the Micro LED particles of the previous mass transfer is not included in the distribution device of this mass transfer, and is irradiated by 280-400 nm ultraviolet light. , the viscosity decreases; 所述更换紫外光可逆胶层步骤,是在所述动力部件的活动端与所述黏取板之间设有黏力传感器,于所述黏取板与Micro LED颗粒分离时,检测出所述黏取板的表面黏力,当检测值低于设定值时,对所述黏取板表面的紫外光可逆胶层进行更换。In the step of replacing the UV light reversible adhesive layer, an adhesive force sensor is arranged between the movable end of the power component and the sticking plate, and when the sticking plate and the Micro LED particles are separated, it detects the When the detected value of the surface adhesive force of the sticking board is lower than the set value, the ultraviolet light reversible adhesive layer on the surface of the sticking board is replaced. 4.Micro LED修复装置,包括承载有Micro LED颗粒的原始载台和承载有目标基板的目标载台,及设于所述原始载台和所述目标载台侧边的动力部件;其特征在于所述原始载台为良品载台,设有Micro LED良品颗粒;所述目标载台为修复载台,用于Micro LED颗粒的修复;所述目标基板为待修复基板;还包括设于所述原始载台上方的微米级视觉传感器,与所述微米级视觉传感器连接的修复转移控制电路,与所述修复转移控制电路连接的ASIC驱动器,与所述ASIC驱动器连接的LED阵列板,及设于所述LED阵列板前侧的透镜阵列;所述动力部件的活动端设有黏取板,所述黏取板设有紫外光可逆胶层;所述微米级视觉传感器摄取所述修复载台中Micro LED坏点颗粒的分布位置,并转换成图像信号传送至所述修复转移控制电路;再经所述修复转移控制电路的处理,转换成控制信号输出至所述ASIC驱动器;所述ASIC驱动器驱动所述LED阵列板,以显示二个相同的图像信号,并通过透镜阵列,对所述紫外光可逆胶层进行照射,只让有Micro LED坏点颗粒分布的位置具有黏力,其他的位置不具有黏力;其中一个图像信号产生的黏力分布区域用于黏取Micro LED坏点颗粒,另一个图像信号产生的黏力分布区域用于黏取Micro LED良品颗粒;然后所述动力部件带动所述黏取板至所述修复载台,直接黏取对应位置的Micro LED坏点颗粒,再转移至所述良品载台上方,黏取Micro LED良品颗粒,以送到修复载台的Micro LED坏点颗粒位置,被Micro LED坏点颗粒位置表面设有的纳米导电银浆黏住,且Micro LED良品颗粒与纳米导电银浆之间的黏力大于Micro LED良品颗粒与所述紫外光可逆胶层之间的黏力,所述动力部件向上移动,实现所述紫外光可逆胶层与Micro LED良品颗粒的分离,Micro LED良品颗粒被转移至所述待修复基板;所述修复载台还设有用于点亮所述待修复基板的点亮治具。4. A Micro LED repair device, comprising an original stage carrying Micro LED particles, a target stage carrying a target substrate, and a power component arranged on the sides of the original stage and the target stage; it is characterized in that The original carrier is a good-quality carrier, and is provided with Micro LED good-quality particles; the target carrier is a repair carrier, which is used for the repair of Micro LED particles; the target substrate is a substrate to be repaired; A micron-scale vision sensor above the original stage, a repair transfer control circuit connected to the micron-scale vision sensor, an ASIC driver connected to the repair transfer control circuit, an LED array board connected to the ASIC driver, and a The lens array on the front side of the LED array plate; the movable end of the power component is provided with a sticking plate, and the sticking plate is provided with a UV light reversible adhesive layer; the micron-level vision sensor captures the Micro LED in the repairing stage The distribution position of the defective particles is converted into an image signal and sent to the repair transfer control circuit; and then processed by the repair transfer control circuit, converted into a control signal and output to the ASIC driver; the ASIC driver drives the The LED array board displays two identical image signals, and irradiates the UV light reversible adhesive layer through the lens array, so that only the locations where the Micro LED defective particles are distributed have adhesive force, and other locations do not have adhesive force. force; one of the adhesive force distribution areas generated by the image signal is used for sticking the Micro LED defective particles, and the other sticky force distribution area generated by the image signal is used for sticking the Micro LED good particles; then the power component drives the adhesive force. Take the board to the repair stage, directly stick the Micro LED bad particles at the corresponding position, and then transfer it to the top of the good product stage, stick the Micro LED good particles, and send the Micro LED bad particles to the repair stage. It is adhered by the nano-conductive silver paste provided on the surface of the Micro LED bad point particles, and the adhesive force between the Micro LED good particles and the nano-conductive silver paste is greater than that between the Micro LED good particles and the UV light reversible adhesive layer The adhesive force of the micro LED is increased, and the power component moves upward to realize the separation of the UV light reversible adhesive layer and the Micro LED good particles, and the Micro LED good particles are transferred to the substrate to be repaired; the repair stage is also provided with a point The lighting fixture for lighting the substrate to be repaired. 5.根据权利要求4所述的Micro LED修复装置,其特征在于所述修复转移控制电路对用于黏取Micro LED坏点颗粒的黏力分布区域,进行累计,其密集度达到黏取板的紫外光可逆胶层的设定值时,发出更换紫外光可逆胶层的信号。5 . The Micro LED repairing device according to claim 4 , wherein the repairing transfer control circuit accumulates the adhesive force distribution area used for sticking and picking up the Micro LED defective particles, and the density reaches the density of the sticking board. 6 . When the set value of the UV light reversible adhesive layer is set, a signal to replace the UV light reversible adhesive layer is issued. 6.Micro LED修复方法,其特征在于采用权利要求4或5所述的修复装置;包括黏力下降步骤、移除步骤和照射位置挪动步骤:6. Micro LED repairing method, characterized in that the repairing device according to claim 4 or 5 is used; including a viscosity reduction step, a removal step, and an irradiation position moving step: 所述黏力下降步骤,是针对第二次修复转移时,上一次修复转移的Micro LED颗粒分布位置未被本次修复转移的分布装置包含的区域,被280-400nm的紫外光照射,黏力下降;The viscosity reduction step is for the second repair and transfer, the distribution position of the last repair and transfer of Micro LED particles is not included in the distribution device for this repair and transfer. decline; 所述移除步骤,是设有的微米级修复用视觉传感器针对Micro LED坏点颗粒的位置进行拍摄,获得坏点图像信号,再根据所述坏点图像信号,再利用所述LED阵列板生成的紫外光对紫外光可逆胶层进行相对应的照射,相对应的位置获得黏力,从而将紫外光可逆胶层贴近待修复基板,将Micro LED坏点颗粒黏住并移除;In the removal step, a micron-level repairing vision sensor is provided to photograph the position of the Micro LED dead pixel particles to obtain a dead pixel image signal, and then use the LED array board to generate a dead pixel image signal according to the dead pixel image signal. The ultraviolet light of the UV light irradiates the ultraviolet light reversible adhesive layer correspondingly, and the corresponding position obtains the adhesive force, so that the ultraviolet light reversible adhesive layer is close to the substrate to be repaired, and the Micro LED defective particles are adhered and removed; 所述照射位置挪动步骤,是第二次拾取Micro LED良品颗粒时,所述紫外光可逆胶层被照射的位置不同于上一次拾取Micro LED良品颗粒时的位置。The step of moving the irradiation position is that when the good Micro LED particles are picked up for the second time, the position where the UV light reversible adhesive layer is irradiated is different from the position when the good Micro LED particles were picked up last time. 7.Micro LED巨量转移、检测及修复设备,其特征在于包括底座联接在一起的巨量转移装置、检测装置和修复装置;所述巨量转移装置为权利要求1或2所述的Micro LED巨量转移装置;所述修复装置为权利要求4或5所述的Micro LED修复装置。7. Micro LED mass transfer, detection and repair equipment, characterized in that it comprises a mass transfer device, a detection device and a repair device whose bases are connected together; the mass transfer device is the Micro LED according to claim 1 or 2 Mass transfer device; the repair device is the Micro LED repair device according to claim 4 or 5. 8.根据权利要求7所述的Micro LED巨量转移、检测及修复设备,其特征在于所述检测装置包括设于机座上的检测工位,设于检测工位侧边且对设于目标基板上的Micro LED颗粒进行点亮的点亮治具,及设于所述检测工位上方的微米级检测用视觉传感器;还包括联接所述巨量转移装置与所述检测装置之间的检测滑轨,所述目标基板从所述巨量转移装置滑动至所述检测工位后,经检测合格时,由设有的检测动力部件取走;经检测有Micro LED坏点颗粒时,设有的检测动力部件将目标基板搬运至修复载台,成为待修复基板。8 . The Micro LED mass transfer, detection and repair equipment according to claim 7 , wherein the detection device comprises a detection station located on the machine base, located on the side of the detection station and opposite to the target. 9 . A lighting fixture for lighting the Micro LED particles on the substrate, and a micron-level detection visual sensor disposed above the detection station; and a detection device for connecting the mass transfer device and the detection device Slide rail, after the target substrate slides from the mass transfer device to the detection station, when the test is qualified, it is taken away by the provided detection power component; when there are Micro LED bad particles detected, there is a The detection power component of the device transports the target substrate to the repair stage to become the substrate to be repaired. 9.根据权利要求8所述的Micro LED巨量转移、检测及修复设备,其特征在于所述修复载台还设有位于待修复基板下方的超低温探针,压触于Micro LED坏点颗粒的位置,以对异方性导电胶膜进行黏力消除;所述超低温探针的直径为20-30μm;还设有微米级修复用视觉传感器,以针对Micro LED坏点颗粒的位置进行拍摄,获得坏点图像信号,再根据所述坏点图像信号,再利用所述LED阵列板生成的紫外光对紫外光可逆胶层进行相对应的照射,相对应的位置获得黏力,从而利用紫外光可逆胶层贴近待修复基板,将Micro LED坏点颗粒黏住并移除;所述修复装置还设有位于待修复基板上方的导电银桨棒,所述导电银桨棒的末端沾有纳米导电银浆,所述导电银桨棒对Micro LED坏点颗粒的位置进行纳米导电银浆的涂抹;所述超低温是低于-70℃以下的温度。9 . The Micro LED mass transfer, detection and repair equipment according to claim 8 , wherein the repair stage is further provided with an ultra-low temperature probe located under the substrate to be repaired, which is pressed against the micro LED dead particles. 10 . position, to eliminate the stickiness of the anisotropic conductive adhesive film; the diameter of the ultra-low temperature probe is 20-30 μm; a micron-level repair vision sensor is also provided to shoot the position of the Micro LED defective particles to obtain The image signal of the dead point, and then according to the image signal of the dead point, the ultraviolet light generated by the LED array board is used to irradiate the ultraviolet light reversible adhesive layer correspondingly, and the corresponding position obtains the adhesive force, so that the ultraviolet light can be reversible. The adhesive layer is close to the substrate to be repaired, and sticks and removes the Micro LED dead pixels; the repairing device is also provided with a conductive silver paddle above the substrate to be repaired, and the end of the conductive silver paddle is stained with nano-conductive silver paste, the conductive silver paddle sticks apply nano-conductive silver paste to the positions of the Micro LED dead pixels; the ultra-low temperature is a temperature below -70°C. 10.根据权利要求9所述的Micro LED巨量转移、检测及修复设备,其特征在于,所述修复装置设有的修复动力部件根据坏点图像信号利用所述黏取板从所述原始载台黏取相应的Micro LED良品颗粒,植入至所述修复载台的待修复基板的Micro LED坏点颗粒位置;所述修复载台设有用于承载所述待修复基板的网状层,所述超低温探针穿过所述网状层,压触于Micro LED坏点颗粒的下方,解除Micro LED坏点颗粒与待修复基板之间的黏力;还包括水平面驱动部件,用于驱动所述网状层,以避开所述网状层的实体部分对所述超低温探针的阻挡。10 . The Micro LED mass transfer, inspection and repair equipment according to claim 9 , wherein the repairing power component provided in the repairing device uses the adhesive plate to remove the original carrier from the original carrier according to the image signal of a dead pixel. 11 . The table sticks the corresponding Micro LED good particles and implants them into the position of the Micro LED bad particles of the substrate to be repaired on the repair stage; the repair stage is provided with a mesh layer for carrying the substrate to be repaired, so The ultra-low temperature probe passes through the mesh layer and presses under the Micro LED dead pixel particles to release the adhesive force between the Micro LED dead pixel particles and the substrate to be repaired; it also includes a horizontal plane driving component for driving the A mesh layer to avoid the blocking of the ultra-low temperature probe by the solid part of the mesh layer.
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