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CN117659482B - Cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane and preparation method and application thereof - Google Patents
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CN117659482B - Cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane and preparation method and application thereof - Google Patents

Cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane and preparation method and application thereof Download PDF

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CN117659482B
CN117659482B CN202311662315.8A CN202311662315A CN117659482B CN 117659482 B CN117659482 B CN 117659482B CN 202311662315 A CN202311662315 A CN 202311662315A CN 117659482 B CN117659482 B CN 117659482B
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anion
perfluorosulfonic acid
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杨大伟
柏槐基
袁茂文
曹朋飞
山伯晋
伍晶鑫
茹小飞
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Jiangsu Kerun Membrane Material Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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    • C08J7/123Treatment by wave energy or particle radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00Fuel cells; Manufacture thereof
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    • H01M8/0202Collectors; Separators, e.g. bipolar separators; Interconnectors
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    • C08J2351/00Characterised by the use of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Derivatives of such polymers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/50Fuel cells

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Abstract

本发明公开了一种阴阳离子辐照接枝改性全氟磺酸离子交换膜及其制备方法和应用。制备方法包括以下步骤:将包含全氟磺酸氟型树脂粉料、阴离子改性剂、阳离子改性剂和接枝助剂的原料混合,烘干得到混合粉料,置于反应釜中,加热升温,排除气体并充入惰性气体后密封,伽马射线辐照,冷却至室温,得到接枝混合粉料;将接枝混合粉料挤出造粒,冷却,干燥,得到母粒;将母料再次加热,进行二次伽马射线辐照,冷却至室温,得到辐照接枝母料;将辐照接枝母料熔融挤出流延成膜,冷却后得到阴阳离子辐照接枝改性全氟磺酸树脂膜;将阴阳离子辐照接枝改性全氟磺酸树脂膜依次经钠化和氢化,得到阴阳离子辐照接枝改性全氟磺酸离子交换膜。The invention discloses an anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane and its preparation method and application. The preparation method comprises the following steps: mixing raw materials including perfluorosulfonic acid fluorine resin powder, anion modifier, cation modifier and grafting auxiliary agent, drying to obtain a mixed powder, placing in a reaction kettle, heating and raising the temperature, removing gas and filling with inert gas and sealing, gamma ray irradiation, cooling to room temperature, and obtaining a grafted mixed powder; extruding and granulating the grafted mixed powder, cooling, and drying to obtain a master batch; heating the master batch again, performing secondary gamma ray irradiation, and cooling to room temperature to obtain an irradiated grafted master batch; melt-extruding and casting the irradiated grafted master batch into a film, and obtaining anion and cation irradiation grafted modified perfluorosulfonic acid resin membrane after cooling; and sequentially subjecting the anion and cation irradiation grafted modified perfluorosulfonic acid resin membrane to sodiumization and hydrogenation to obtain anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane.

Description

Cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane and preparation method and application thereof
Technical Field
The invention relates to an anion-cation irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane and a preparation method and application thereof, belonging to the field of vanadium battery ion exchange membranes.
Background
Compared with other energy storage batteries, the all-vanadium redox flow battery (VRB) has the characteristics of high energy efficiency, short response time, low self-discharge rate, long cycle life and the like, and is widely focused and applied. The vanadium redox flow battery is considered as an efficient energy storage/conversion system, has a design capacity which is much larger than that of a conventional battery, has obvious advantages, can be connected to a power system in a large scale, and can be widely applied to large-scale energy storage equipment such as load balancing, power grid peak shaving, uninterruptible Power Supply (UPS) and the like.
Currently, as one of the key components of redox flow batteries, membrane materials are used to separate both positive and negative half-cells, and also provide channels for charge balancing ions to ensure the cell circuit. In recent years, basic research and industrial application research on membrane materials for vanadium batteries have been paid attention to and have been greatly developed, and the membrane materials for vanadium batteries can be classified into Cation Exchange Membranes (CEM), anion Exchange Membranes (AEMS), amphoteric ion exchange membranes (ALEM) and porous membranes according to the mechanism exerted. The resin material of the Nafion membrane is sulfonated tetrafluoroethylene polymer, has high conductivity and is the most widely used cation exchange membrane material, but the vanadium permeability is high; while anion exchange membranes reduce vanadium ion permeation due to Donnan rejection, but are limited by low conductivity; thus, the preparation of amphoteric ion exchange membranes having both high conductivity and low vanadium ion permeability in a manner suitable for mass production is a research direction in the art.
Disclosure of Invention
In view of the problems existing in the background art, the invention aims to provide an anion-cation irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane and a preparation method thereof, which are characterized in that the perfluorinated sulfonic acid fluororesin is subjected to high-efficiency and uniform anion-cation irradiation grafting modification, on one hand, a branched structure with a higher proportion is given to the perfluorinated sulfonic acid fluororesin, the crystallinity of the resin is reduced, the amorphous proportion is improved, the resin has stable fluidity and viscoelasticity in a processing temperature range, the processing and the forming are easier, and the amphoteric perfluorinated sulfonic acid ion exchange membrane with uniform thickness and smooth and flat surface is successfully prepared by an extrusion casting method; on the other hand, the anion-cation irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane prepared by the method has uniformly distributed grafted anions and cations, so that the anions maintain good conductivity of the membrane, the Donnan rejection effect of the cations reduces the permeation of vanadium ions, the barrier property of the vanadium ions is improved, and the comprehensive service performance of the vanadium battery membrane is greatly improved.
In order to achieve the above purpose, the invention provides a preparation method of cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane, which comprises the following steps: (1) Fully mixing raw materials comprising perfluorosulfonic acid fluorine resin powder, an anionic modifier, a cationic modifier and a grafting auxiliary agent in a high-speed stirrer according to a proportion, drying to obtain mixed powder, drying the mixed powder, placing the mixed powder into a reaction kettle, heating to 95-100 ℃, discharging gas, filling inert gas, sealing, performing gamma ray irradiation, and cooling to room temperature at an irradiation dose of 2.5-3Mrad to obtain grafting mixed powder; (2) Extruding and granulating the grafting mixed powder in the step (1) by using an exhaust double-screw extruder, cooling and drying to obtain master batch; (3) Heating the master batch in the step (2) to 95-100 ℃ again, performing secondary gamma ray irradiation with the irradiation dose of 2.5-3.5Mrad, and cooling to room temperature to obtain an irradiation grafting master batch; (4) Putting the irradiation grafting master batch in the step (3) into a single screw extruder, carrying out melt extrusion casting to form a film, and cooling to obtain an anion-cation irradiation grafting modified perfluorinated sulfonic acid resin film; (5) And (3) sequentially carrying out sodium modification and hydrogenation on the anion-cation irradiation grafting modified perfluorinated sulfonic acid resin membrane in the step (4) to obtain the anion-cation irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane.
Optionally, the anionic modifier is one or a combination of styrene sulfonic acid, sodium styrene sulfonate and 3-propyl methacrylate sulfonate.
Optionally, the cationic modifier is one or a combination of dimethylaminoethyl methacrylate, N- (4-vinylbenzyl) -N, N-dialkylamine, N-isopropylacrylamide, methacryloyloxyethyl trimethyl ammonium chloride and 1-allyl-3-vinylimidazole acetate.
Optionally, the grafting aid is para-fluorostyrene.
Optionally, the feedstock further comprises a solvent; the solvent is dichloroethane or toluene.
Optionally, the mass ratio of the perfluorosulfonic acid fluorine resin powder to the anionic modifier to the cationic modifier to the grafting auxiliary to the solvent is 100 (3-5): 5-8): 0.8-1.2: (10-20).
Optionally, the drying temperature in the step (1) is 90-100 ℃; the times of exhausting the gas and filling the inert gas are 3-5 times; the inert gas is nitrogen or argon.
Optionally, the vented twin screw extruder of step (2) and the single screw extruder of step (3) have screws, barrels and dies made of corrosion-resistant nickel-base alloy steel; the temperature of each section of the exhaust double-screw extruder is 275-295 ℃, and the temperature of a machine head is 280-285 ℃; the temperature of each section of the single screw extruder is 270-295 ℃, and the temperature of the machine head is 286-290 ℃.
Optionally, the sodium modification and hydrogenation of the step (5) are carried out, specifically, the anion-cation irradiation grafting modified perfluorinated sulfonic acid resin membrane in the step (4) is sequentially subjected to sodium modification by Na0H methanol solution with the concentration of 25wt% and hydrogenation by hydrochloric acid solution with the concentration of 16wt%, and deionized water is used for cleaning and drying, thus obtaining the anion-cation irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane.
The invention also provides the cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane prepared by the method.
The invention also provides application of the cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane, which is used for vanadium batteries.
The beneficial effects of the invention are as follows:
1. According to the application, the anionic modifier, the cationic modifier and the grafting auxiliary agent are uniformly distributed on the surface of the powder through the solvent, then the solvent is removed by drying, then the activated resin is irradiated by gamma rays under the protection of inert gas, the specific anionic and cationic modifier is grafted on the activated perfluorinated sulfonic acid fluororesin by the grafting auxiliary agent, the branching degree of the perfluorinated sulfonic acid fluororesin is improved, the perfluorinated sulfonic acid fluororesin keeps stable fluidity in the processing process, the shearing-thinning non-Newtonian fluid property is weakened, the proper viscoelasticity is provided, and the amphoteric perfluorinated sulfonic acid ion exchange membrane is convenient to prepare by extrusion casting processing.
2. The method can obtain the amphoteric perfluorinated sulfonic acid resin film with uniform film thickness and smooth surface, and the permeability of vanadium ions of the amphoteric perfluorinated sulfonic acid resin film is obviously reduced under the condition of keeping good conductivity.
Detailed Description
The following detailed description of the present invention will provide further details in order to make the above-mentioned objects, features and advantages of the present invention more comprehensible.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
Raw materials: perfluorosulfonic acid fluoro resin powder, dupont; other raw materials are commercially available.
Example 1
(1) Fully mixing raw materials of perfluorosulfonic acid fluorine-type resin powder, sodium styryl sulfonate, dimethylaminoethyl methacrylate, p-fluorostyrene and dichloroethane in a high-speed stirrer according to a proportion, drying at 90 ℃ to obtain mixed powder, drying the mixed powder, placing the mixed powder in a reaction kettle, heating to 95 ℃, removing gas, filling nitrogen or argon for 3 times, sealing, radiating with gamma rays, and cooling to room temperature to obtain grafted mixed powder; the mass ratio of perfluorosulfonic acid fluorine resin powder to styryl sodium sulfonate to dimethylaminoethyl methacrylate to p-fluorostyrene to dichloroethane is 100:3:5:0.8:10;
(2) Extruding and granulating the grafting mixed powder in the step (1) by using an exhaust double-screw extruder, cooling and drying to obtain master batch; the vented twin screw extruder has a screw, barrel and die head made of corrosion resistant nickel-based alloy steel; the temperature of each section of the exhaust double-screw extruder is 290-295 ℃ and the temperature of the machine head is 285 ℃;
(3) Heating the master batch in the step (2) to 95 ℃ again, performing secondary gamma ray irradiation with the irradiation dose of 2.5Mrad, and cooling to room temperature to obtain an irradiation grafting master batch;
(4) Putting the irradiation grafting master batch in the step (3) into a single screw extruder, carrying out melt extrusion casting to form a film, and cooling to obtain an anion-cation irradiation grafting modified perfluorinated sulfonic acid resin film; the single screw extruder has a screw, a barrel, and a die head made of a corrosion-resistant nickel-base alloy steel; the temperature of each section of the single screw extruder is 290-295 ℃ and the temperature of the machine head is 290 ℃;
(5) And (3) sequentially carrying out sodium treatment on the cation-anion irradiation grafting modified perfluorinated sulfonic acid resin membrane in the step (4) by using a Na0H methanol solution with the concentration of 25wt% and hydrogenation by using a hydrochloric acid solution with the concentration of 16wt%, washing by using deionized water, and drying to obtain the cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane.
Example 2
(1) Fully mixing perfluorosulfonic acid fluorine-type resin powder, methacrylic acid 3-sulfonic acid propyl ester, N-isopropyl acrylic acid amide, p-fluorostyrene and toluene in a high-speed stirrer according to a proportion, drying at 100 ℃ to obtain mixed powder, drying the mixed powder, placing the mixed powder into a reaction kettle, heating to 100 ℃, exhausting gas, filling nitrogen or argon for 5 times, sealing, radiating with gamma rays, radiating with the dose of 3Mrad, and cooling to room temperature to obtain grafted mixed powder; the mass ratio of perfluorosulfonic acid fluorine resin powder to methacrylic acid 3-sulfopropyl ester to N-isopropyl acrylamide to p-fluorostyrene to toluene is 100:5:8:1.2:20;
(2) Extruding and granulating the grafting mixed powder in the step (1) by using an exhaust double-screw extruder, cooling and drying to obtain master batch; the vented twin screw extruder has a screw, barrel and die head made of corrosion resistant nickel-based alloy steel; the temperature of each section of the exhaust double-screw extruder is 275-285 ℃ and the temperature of a machine head is 280 ℃;
(3) Heating the master batch in the step (2) to 100 ℃ again, performing secondary gamma ray irradiation with the irradiation dose of 3.5Mrad, and cooling to room temperature to obtain an irradiation grafting master batch;
(4) Putting the irradiation grafting master batch in the step (3) into a single screw extruder, carrying out melt extrusion, carrying out blow molding to form a film through a film blowing machine head, and cooling to obtain an anion-cation irradiation grafting modified perfluorinated sulfonic acid resin film; the single screw extruder has a screw, a barrel, and a die head made of a corrosion-resistant nickel-base alloy steel; the temperature of each section of the single screw extruder is 270-288 ℃ and the temperature of the machine head is 286 ℃;
(5) And (3) sequentially carrying out sodium treatment on the cation-anion irradiation grafting modified perfluorinated sulfonic acid resin membrane in the step (4) by using a Na0H methanol solution with the concentration of 25wt% and hydrogenation by using a hydrochloric acid solution with the concentration of 16wt%, washing by using deionized water, and drying to obtain the cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane.
Example 3
(1) Fully mixing perfluorosulfonic acid fluorine-type resin powder, methacrylic acid 3-sulfonic acid propyl ester, 1-allyl-3-vinyl imidazole acetate, p-fluorostyrene and dichloroethane in a high-speed stirrer according to a proportion, drying at 95 ℃ to obtain mixed powder, drying the mixed powder, placing the mixed powder in a reaction kettle, heating to 98 ℃, exhausting gas, filling nitrogen or argon for 4 times, sealing, radiating with gamma rays, radiating with the dose of 2.8Mrad, and cooling to room temperature to obtain grafted mixed powder; the mass ratio of perfluorosulfonic acid fluorine resin powder to methacrylic acid 3-sulfonic acid propyl ester to 1-allyl-3-vinyl imidazole acetate to p-fluorostyrene to dichloroethane is 100:4:6.5:1:15;
(2) Extruding and granulating the grafting mixed powder in the step (1) by using an exhaust double-screw extruder, cooling and drying to obtain master batch; the vented twin screw extruder has a screw, barrel and die head made of corrosion resistant nickel-based alloy steel; the temperature of each section of the exhaust double-screw extruder is 280-290 ℃, and the temperature of a machine head is 283 ℃;
(3) Heating the master batch in the step (2) to 98 ℃ again, performing secondary gamma ray irradiation with the irradiation dose of 2.8Mrad, and cooling to room temperature to obtain an irradiation grafting master batch;
(4) Putting the irradiation grafting master batch in the step (3) into a single screw extruder, carrying out melt extrusion, carrying out blow molding to form a film through a film blowing machine head, and cooling to obtain an anion-cation irradiation grafting modified perfluorinated sulfonic acid resin film; the single screw extruder has a screw, a barrel, and a die head made of a corrosion-resistant nickel-base alloy steel; the temperature of each section of the single-screw extruder is 285-290 ℃ and the temperature of a machine head is 288 ℃;
(5) And (3) sequentially carrying out sodium treatment on the cation-anion irradiation grafting modified perfluorinated sulfonic acid resin membrane in the step (4) by using a Na0H methanol solution with the concentration of 25wt% and hydrogenation by using a hydrochloric acid solution with the concentration of 16wt%, washing by using deionized water, and drying to obtain the cation-anion irradiation grafting modified perfluorinated sulfonic acid ion exchange membrane.
Comparative example 1
The procedure of example 3 was repeated except that p-fluorostyrene was not added.
Performance testing
The properties of the example and comparative resins and films, respectively, were tested and the specific test data are shown in Table 1 below.
TABLE 1
Test item Example 1 Example 2 Example 3 Comparative example 1
Appearance of Smooth surface Smooth surface Smooth surface Micro roughness of surface
Thickness/um 20±0.6 20±0.6 20±0.6 23±1
Conductivity/mS/cm at 25 ℃ 102.0 102.5 101.8 100.5
Vanadium ion permeability/cm -2/cm 0.75×10-7 0.82×10-7 0.71×10-7 1.3×10-7
As can be seen from the data of examples and comparative examples, the invention adopts the perfluorosulfonic acid fluororesin assisted by the para-fluorostyrene to carry out anion-cation irradiation grafting modification, so that the grafting rate of the perfluorosulfonic acid fluororesin is greatly improved, the viscoelasticity of the resin is further improved under the condition that the flow rate and the thermal stability of a branched structure are maintained, the processability is improved, the film product prepared by extrusion casting is flat and smooth, the thickness is thinner and more uniform, the dimensional stability is good, the conductivity retention rate of the perfluorosulfonic acid ion exchange film after sodium treatment and acidification treatment is high, the vanadium ion isolation effect is obviously improved, and the comprehensive performance requirements of practical use are met.
The above examples are given for clarity of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.

Claims (5)

1.一种阴阳离子辐照接枝改性全氟磺酸离子交换膜的制备方法,其特征在于,包括以下步骤:1. A method for preparing anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane, characterized in that it comprises the following steps: (1)将包含全氟磺酸氟型树脂粉料、阴离子改性剂、阳离子改性剂、接枝助剂和溶剂的原料按比例在高速搅拌机中充分混合,烘干得到混合粉料,将混合粉料烘干置于反应釜中,加热升温至95-100℃,排除气体并充入惰性气体后密封,伽马射线辐照,辐照剂量2.5-3Mrad,冷却至室温,得到接枝混合粉料,其中,全氟磺酸氟型树脂粉料、阴离子改性剂、阳离子改性剂、接枝助剂和溶剂的质量比为100:(3-5):(5-8):(0.8-1.2):(10-20);(1) mixing raw materials including perfluorosulfonic acid fluorine resin powder, anion modifier, cationic modifier, grafting aid and solvent in a high-speed mixer in proportion, drying to obtain a mixed powder, drying the mixed powder and placing it in a reaction kettle, heating it to 95-100° C., removing gas and filling it with inert gas, then sealing it, irradiating it with gamma rays, the irradiation dose is 2.5-3 Mrad, cooling it to room temperature, and obtaining a grafted mixed powder, wherein the mass ratio of perfluorosulfonic acid fluorine resin powder, anion modifier, cationic modifier, grafting aid and solvent is 100:(3-5):(5-8):(0.8-1.2):(10-20); (2)将步骤(1)所述的接枝混合粉料用排气式双螺杆挤出机挤出造粒,冷却,干燥,得到母粒;(2) extruding the grafted mixed powder described in step (1) into granules using a vented twin-screw extruder, cooling, and drying to obtain master batches; (3)将步骤(2)所述母粒再次加热至95-100℃,进行二次伽马射线辐照,辐照剂量2.5-3.5Mrad,冷却至室温,得到辐照接枝母料;(3) heating the masterbatch in step (2) to 95-100° C. again, irradiating it with gamma rays for a second time at a irradiation dose of 2.5-3.5 Mrad, and cooling it to room temperature to obtain an irradiated grafted masterbatch; (4)将步骤(3)所述辐照接枝母料投入单螺杆挤出机中,熔融挤出流延成膜,冷却后得到阴阳离子辐照接枝改性全氟磺酸树脂膜;(4) putting the irradiated grafted masterbatch of step (3) into a single screw extruder, melting and extruding it to form a film, and cooling it to obtain an anionic and cationic irradiated grafted modified perfluorosulfonic acid resin film; (5)将步骤(4)所述阴阳离子辐照接枝改性全氟磺酸树脂膜依次经钠化和氢化,得到阴阳离子辐照接枝改性全氟磺酸离子交换膜;(5) subjecting the anion and cation irradiation grafted modified perfluorosulfonic acid resin membrane described in step (4) to sodiumization and hydrogenation in sequence to obtain anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane; 所述阴离子改性剂为苯乙烯磺酸、苯乙烯基磺酸钠和甲基丙烯酸3-磺酸丙脂中的一种或两种以上的组合;The anion modifier is one or a combination of two or more of styrene sulfonic acid, sodium styrene sulfonate and 3-sulfonyl methacrylate; 所述阳离子改性剂为甲基丙烯酸二甲氨乙酯、N-(4-乙烯基苄基)-N,N-二烷基胺、N-异丙基丙烯酸酰胺、甲基丙烯酰氧乙基三甲基氯化铵和1-烯丙基-3-乙烯基咪唑醋酸盐中的一种或两种以上的组合;The cationic modifier is one or a combination of two or more of dimethylaminoethyl methacrylate, N-(4-vinylbenzyl)-N,N-dialkylamine, N-isopropylacrylamide, methacryloyloxyethyltrimethylammonium chloride and 1-allyl-3-vinylimidazole acetate; 所述接枝助剂为对氟苯乙烯;The grafting auxiliary agent is p-fluorostyrene; 所述溶剂为二氯乙烷或甲苯。The solvent is ethylene dichloride or toluene. 2.如权利要求1所述的阴阳离子辐照接枝改性全氟磺酸离子交换膜的制备方法,其特征在于,所述步骤(1)的烘干温度为90-100℃;所述排除气体并充入惰性气体的次数为3-5次;所述惰性气体为氮气或氩气。2. The method for preparing anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane according to claim 1, characterized in that the drying temperature of step (1) is 90-100°C; the number of times of exhausting gas and filling with inert gas is 3-5 times; and the inert gas is nitrogen or argon. 3.如权利要求1所述的阴阳离子辐照接枝改性全氟磺酸离子交换膜的制备方法,其特征在于,所述步骤(5)的钠化和氢化,具体为将步骤(4)所述阴阳离子辐照接枝改性全氟磺酸树脂膜依次经浓度25wt%的Na0H甲醇溶液钠化与16wt%的盐酸溶液氢化,去离子水清洗,干燥,得到阴阳离子辐照接枝改性全氟磺酸离子交换膜。3. The method for preparing anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane according to claim 1, characterized in that the sodiumization and hydrogenation in step (5) are specifically the following steps: sodiumization of the anion and cation irradiation grafted modified perfluorosulfonic acid resin membrane in step (4) with a 25wt% NaOH methanol solution and hydrogenation with a 16wt% hydrochloric acid solution, followed by washing with deionized water and drying to obtain the anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane. 4.如权利要求1-3中任意一项所述方法制备得到的阴阳离子辐照接枝改性全氟磺酸离子交换膜。4. An anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane prepared by the method according to any one of claims 1 to 3. 5.如权利要求4所述阴阳离子辐照接枝改性全氟磺酸离子交换膜的应用,其特征在于,所述阴阳离子辐照接枝改性全氟磺酸离子交换膜用于钒电池。5. The use of the anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane as claimed in claim 4, characterized in that the anion and cation irradiation grafted modified perfluorosulfonic acid ion exchange membrane is used in vanadium batteries.
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CN102181069A (en) * 2011-04-12 2011-09-14 北京大学 Preparation method of amphoteric ion exchange membrane
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