CN1400660A - Semiconductor module and its manufacture - Google Patents

Abstract

A semiconductor component and a manufacturing method thereof, wherein the via hole (3) used for forming a conduction path between two sides of a double-sided copper-plated base plate (1) is shared between the wiring patterns of the semiconductor component (2), and the The opening is made into a long hole shape, and the semiconductor component is manufactured by cutting along the line of cutting the via hole (3) in half. The via hole is formed by corroding the copper plating layer (10) to form an opening, and then performing laser processing on the bottom plate material (11) at the opening position to form a circular opening, which is formed by continuously forming a plurality of circular openings. Form long holes. The invention can improve the reliability of the conduction part of the via hole on the semiconductor component formed by sharing the via hole and sealing it with resin, and improve the product qualification rate of the semiconductor component.

Description

Semiconductor component and manufacturing method thereof

technical field

The invention relates to the technical field of arranging the wiring patterns of multiple semiconductor components in rows and columns on a double-sided copper-plated base plate, installing semiconductor chips on a specified position, sealing the entire base plate with resin, and then cutting and manufacturing semiconductor components. A semiconductor component manufactured by disposing a via hole (ビアホ-ル) for conducting conduction between the two sides on the end of the semiconductor component on a double-sided copper-plated substrate, and slicing the via hole in half along a line that cuts the via hole in half, and its manufacture method.

Background technique

In the past, semiconductor components (hereinafter referred to as "components") manufactured after being sealed and molded with resin are provided with via holes that do not penetrate the bottom plate or via holes that penetrate the bottom plate on the double-sided copper-plated bottom plate (hereinafter referred to as “bottom plate”). Internal terminals for wire connection to semiconductor chips etc. disposed on the upper surface are electrically connected to external terminals disposed on the lower surface of the substrate for surface mounting.

The aforementioned via hole is a non-through hole for connecting specific two layers in a multilayer substrate, and is also called an inner via hole (inna-via) in a multilayer substrate with more than 4 layers. In addition, the mechanical strength is higher than that of the through hole, and the step of preventing the resin material from entering the through hole can be omitted in the resin sealing step.

And arrange the above-mentioned via holes and the like at the outer peripheral end of the module so that the via holes can be shared between adjacent modules, and when cutting the resin sealing body, cut the via holes and the like in half. , to reduce the proportion of the base plate to the components.

Regarding the formation method of the above-mentioned via holes, as disclosed in JP-P-10-294400, some of them use conductors such as electroplating layers to block the through holes formed on the bottom plate, and some of them use corrosion methods to corrode the copper plating layer on one side into a circular shape. After forming, irradiate the laser in the form of retaining the copper plating layer on the reverse side to remove the base material (epoxy resin, glass epoxy resin, etc.), and then conduct conduction treatment on the processed inner peripheral surface.

However, the method of sealing the through-hole disclosed in the above-mentioned Japanese Unexamined Patent Publication No. 10-294400 requires special technology to ensure mechanical strength during the sealing process, which leads to an increase in manufacturing cost.

In recent years, so-called multilayer substrates having 4, 6, or 8 or more layers have adopted a so-called assembly method in which internal via holes are formed when the substrates are laminated.

In addition, when using the method of forming via holes from one side of the copper plating layer, the copper plating layer on the surface layer must be etched into a circular shape by etching first, and then irradiated with laser light to remove the bottom plate material, and output to retain the copper plating layer on the reverse side. In the adjustment process, the step setting is complicated and delicate, and the cross-sectional shape is not a perfect cylinder, as shown in FIG. 5(A), residues of processing chips D and uncut parts remain in the peripheral part. As a result, when the internal plating of this via hole is used to conduct it, as shown in Figure 5 (B), not only can there not be enough contact parts to make the plating layer conduct with the copper plating layer on the reverse side, but also the contact part will There is an interface E, and when the via hole is cut in half or when there is an external impact, as shown in FIG. 5(C), the contact part will be peeled off, resulting in poor conduction.

Contents of the invention

The present invention is just to solve the above-mentioned problems, and the purpose is to provide a semiconductor component and its manufacturing method. The hole reliably forms a conductive path between the two sides, and at the same time, when the via hole is cut in half, the contact part of the conductive part will not be peeled off, so the reliability is good and the product qualification rate is high.

In order to achieve the above object, the semiconductor module and its manufacturing method of the present invention are constituted as follows.

Semiconductor component of the present invention is that the wiring patterns of a plurality of semiconductor components 2 are arranged in rows between the two sides of the double-sided copper-plated base plate 1, and the via holes 3 used to form the conduction path between the two sides of the aforementioned base plate 1 are The wiring patterns of the semiconductor components 2 of each unit are common, and the openings are made into long holes, and the semiconductor chip 20 is mounted on the predetermined position of the wiring pattern and wired. After the wiring, the whole base plate 1 is sealed with resin, and along the The via hole 3 is manufactured by cutting the line cut in half.

The manufacturing method of the semiconductor component of the present invention is to make the via hole 3 that forms the conductive path between the two sides of the double-sided copper-plated base plate 1 to be shared by the wiring patterns of the semiconductor components 2 of each unit, and the wiring patterns of the plurality of semiconductor components 2 are shared. The patterns are arranged in rows and columns, and after installing the semiconductor chip 20 on the specified position, the whole base plate 1 is sealed with resin, and then the semiconductor assembly 2 is manufactured by cutting along the line that cuts the aforementioned via hole 3 in half. Its characteristics are: , the aforementioned via hole 3 is made into a long hole shape.

In addition, after the prescribed position of the copper plating layer 10 of the double-sided copper-plated base plate 1 is drilled by etching, the base material 11 at the drilled position can be cut off by laser processing to form a circular opening 31, And by forming a plurality of circular openings 31 continuously, an elongated opening is formed.

In the resin sealing step, a fluororesin film 40d may be interposed between the female mold 40 and the resin 25a for resin sealing.

The above reference numerals are added to facilitate understanding of the present invention, and it goes without saying that the present invention is not limited to the forms shown in the drawings.

Description of drawings

FIG. 1 is a perspective view showing the appearance of a semiconductor package according to this embodiment.

Fig. 2 is an external view of a base plate provided with via holes according to the present embodiment.

Fig. 3 is a cross-sectional view showing the procedure of forming via holes in the present embodiment.

4 is a cross-sectional view showing a resin sealing step (A), a partially enlarged resin sealing step (B) and a cutting step (C) of the present embodiment.

Fig. 5 is a sectional view showing a conventional via hole.

Detailed ways

Embodiments of the semiconductor device and its manufacturing method of the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a perspective view showing the appearance of a semiconductor package according to this embodiment. Fig. 2 is an external view of a base plate provided with via holes according to the present embodiment. Fig. 3 is a cross-sectional view showing the procedure of forming via holes in the present embodiment. 4 is a cross-sectional view showing a resin sealing step (A), a partially enlarged resin sealing step (B) and a cutting step (C) of the present embodiment. Fig. 5 is a sectional view showing a conventional via hole.

As shown in FIG. 1 , one unit of the present embodiment consists of a semiconductor chip 20 mounted on a platform 21 on a base plate 1 , an internal terminal 22 for line connection arranged around the platform 21 , and an electrode 20 a connecting the semiconductor chip 20 . It is composed of the wire 23 of the internal terminal 22, the external terminal 24 on the back of the base plate 1, and the long-hole-shaped via hole 3 cut in half for conducting the internal terminal 22 and the external terminal 24 at the end of the component 2, and the whole is used Resin seal. The above structure is the same as the conventional structure, so detailed description is omitted.

The main points of the semiconductor device and its manufacturing method of the present invention, that is, the embodiment of the via hole 3 will be described in detail below.

As shown in FIG. 2 , firstly, the copper plating layer 10 on one surface is etched to form a predetermined number of slot-shaped openings 30 at predetermined positions. The size of the opening 30 in this embodiment is 0.15mm in diameter and 0.35mm in length, and its configuration position is set as follows: when the configuration pattern is arranged in a row and column in the subsequent process, it is located at the end of the pattern, and when the pattern is arranged along the via hole When the center line in the longitudinal direction of 3 is cut, it is located at a position shared by adjacent modules 2 . In addition, in order to further improve the heat dissipation effect, heat dissipation via holes 32 (positions indicated by double-dashed lines in FIG. 2 ) may also be arranged on the inner surface of the module 2 .

Then, as shown in Fig. 3 (A), at first irradiate the laser through the output adjustment, make the laser contact one end of the longitudinal direction of the opening 30, and can not damage the copper plating layer 10 on the other side (reverse side), to remove the resin layer 11, A substantially cylindrical opening 31a is formed. Next, as shown in FIG. (B), laser light is brought into contact with the other end in the longitudinal direction of the opening 30 to remove the resin layer 11 to form an approximately cylindrical opening 31b. Finally, as shown in FIG. (C), the middle portion between the above-mentioned irradiated positions is irradiated with laser light to remove the remaining resin layer 11 to form openings 31c. As a result, the three openings 31a, 31b, and 31c are connected to form one elongated via hole 3 . Then, conduction treatment is performed inside the via hole 3 by electrolytic plating. In this step, the via hole 3 of this embodiment has a mortar-like cross-section as shown in FIG. 3(C), but since it has a long hole shape, a large contact area can be ensured.

The laser processing of this embodiment is performed at a high speed (for example, 1000 holes/1 second) by a laser drilling machine equipped with an electroplating system.

Then print, develop, and dissolve on the base plate 1 by conventional photography, thereby forming a specified number of wiring patterns at specified positions, that is, platforms 21, internal terminals 22 and external terminals 24, etc., and on the platform 21 The semiconductor chip 20 is loaded, and wire connection is performed.

Then the entire bottom plate 1 is put into the casting mold 4, and the sealing resin 25a is filled to form the resin sealing body 25. On the bottom surface 40a of the female mold 40 of the casting mold 4, the convex strips 40b having a V-shaped cross section are arranged in a grid, and the ridges 40c of the convex strips 40b are connected to the line connecting the center of the passage hole 3 on the bottom plate 1. Align top and bottom. Form the V-shaped grooves 25b (hereinafter referred to as V-shaped grooves) aligned with the via holes 3 in a grid pattern on the upper surface of the resin sealing body 25 by using the ribs 40b. In addition, in order to facilitate the gap between the female mold 40 and the resin 25a The bottom surface 40a of the female mold 40 has a fluororesin film 40d sandwiched therein to improve the releasability.

Finally, the entire bottom plate 1 is taken off from the casting mold 4 and fixed on the cutting device 5, and cut along the V-shaped groove 25b with a cutting knife 50 to be divided into units 2 of each unit. At this time, since the thickness of the cutting blade 50 is less than the circumference of the via hole 3 , the divided via hole 3 can serve as a conduction means to connect the internal terminal 22 and the external terminal of each adjacent module 2 . In addition, since the dividing surface of the via hole 3 is substantially consistent with the cutting surface of the resin sealing body 25 of the module 2, the part of the bottom plate 1 does not protrude from the outer peripheral contour of the module 2, and miniaturization can be realized.

When adopting the above-mentioned semiconductor component of the present invention and its manufacturing method, since the via hole is made as a long-hole-shaped opening, the physical connection strength of the conduction portion during the conduction process on the inner peripheral surface of the via hole is improved, and the via hole is cut in half simultaneously. The peelability when opening is also good, which improves the reliability of the electrical connection of the component.

This helps to improve the product qualification rate during component manufacturing, which can improve production efficiency and reduce manufacturing costs.

Claims (4)

1. a semiconductor subassembly is characterized in that,

Be between the two sides of two-sided copper facing base plate (1), the wiring pattern of a plurality of semiconductor subassemblies (2) to be arranged in the ranks shape,

Make to form between the wiring pattern of via hole (3) that the guiding path between described base plate (1) two sides uses commonly, and its perforate made the slotted hole shape for the semiconductor subassembly of each unit (2),

It is after semiconductor chip (20) and wiring are installed on the assigned position of this wiring pattern that this base plate (1) is whole with resin-sealed,

After the line cutting that this via hole (3) is half-and-half cut, create.

2. manufacturing method of semiconductor module, be make form between the wiring pattern of via hole (3) that the guiding path between two-sided copper facing base plate (1) two sides uses for the semiconductor subassembly of each unit (2) common, the wiring pattern of a plurality of semiconductor subassemblies (2) is arranged in the ranks shape, and it is after semiconductor chip (20) is installed on the assigned position that this base plate (1) is whole with resin-sealed, produce semiconductor subassembly (2) along the line cutting that aforementioned via hole (3) is half-and-half cut then

It is characterized in that, aforementioned via hole (3) is made long hole shape.

3. a manufacturing method of semiconductor module is characterized in that, in the process that forms via hole (3),

Be with the assigned position of the copper plate (10) of two-sided copper facing base plate (1) with the corrosion treatment perforate after, the baseboard material of handling this position of opening by laser processing (11) eliminates with formation round hole (31), and by forming the perforate that a plurality of round holes (31) form the slotted hole shape continuously.

4. according to claim 2 or 3 described manufacturing method of semiconductor module, it is characterized in that, in resin-sealed operation, between the resin (25a) of former (40) and resin-sealed usefulness, sandwich fluorine resin film (40d).

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