CN208954933U - Arc chamber and plasma immersion rifle - Google Patents
Arc chamber and plasma immersion rifle Download PDFInfo
- Publication number
- CN208954933U CN208954933U CN201821519444.6U CN201821519444U CN208954933U CN 208954933 U CN208954933 U CN 208954933U CN 201821519444 U CN201821519444 U CN 201821519444U CN 208954933 U CN208954933 U CN 208954933U
- Authority
- CN
- China
- Prior art keywords
- liner plate
- arc chamber
- chamber
- locular wall
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000007654 immersion Methods 0.000 title claims description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000010891 electric arc Methods 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000012423 maintenance Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
Landscapes
- Plasma Technology (AREA)
Abstract
The utility model relates to a kind of arc chambers, comprising: locular wall, the locular wall constitute a chamber；In the chamber and the liner plate of the covering chamber wall inner surface, the liner plate are detachably secured in the chamber wall inner surface.Maintenance efficiency can be improved, effectively remove the deposit film generated in the arc chamber.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of arc chambers and a kind of plasma immersion
Rifle.
Background technique
Ion implanting is common ion doping technique in semiconductor fabrication process, positively charged in ion implantation process
The ion of lotus hits the wafer injected, will lead to positive charge build-up on the insulating regions of wafer, to generate front surface electricity
Gesture.In ion implantation device, plasma immersion rifle (PFG, plasma flood gun) is a kind of dress for generating electronics
It sets, is the essential element of ion implantation device.PFG is for generating the plasma including low energy electrons, so that low energy is electric
Son is assigned in the ion beam for ion implanting, is transferred to crystal column surface to neutralize the positive charge of crystal column surface, to reduce
Since positive charge accumulation is damaged caused by wafer semiconductor-on-insulator device.
Plasma immersion rifle includes arc chamber (Arc chamber), heating wire is provided in arc chamber, by electricity
Gas ionization in arc chamber is generated plasma by heated filament power supply.Plasma will cause bombardment to heating wire, so that electric heating silk material
Material is sputtered out, is formed a surface sediments film in the inner wall surface of arc chamber, is influenced product yield.It in the prior art, can be right
Plasma immersion rifle carries out preventive maintenance, and to remove the deposit film of electric arc chamber inner wall surface, whole process is more
Cumbersome, efficiency is lower.The deposit film of removal electric arc chamber inner wall surface can cause to damage to plasma immersion rifle every time
Consumption, and if cleaning is not clean, when being cleared up again, it will increase downtime, to influence board output.
Utility model content
Technical problem to be solved by the utility model is to provide a kind of arc chamber and a kind of plasma immersion rifle,
Maintenance effect is improved, service time is shortened.
To solve the above-mentioned problems, the utility model provides a kind of arc chamber, comprising: locular wall, the locular wall constitute one
Chamber；In the chamber and the liner plate of the covering chamber wall inner surface, the liner plate are detachably secured to the locular wall
On inner surface.
Optionally, there is the locular wall gas access and ion beam to export；The liner plate has and the gas access
Corresponding opening is exported with ion beam.
Optionally, the liner plate is identical as the material of the locular wall.
Optionally, the liner plate is tungsten plate.
Optionally, the liner plate with a thickness of 0.5cm~2cm.
Optionally, it is fitted closely between the liner plate and the chamber wall inner surface.
Optionally, the liner plate includes more than two sub- liner plates.
The technical solution of the utility model also provides a kind of plasma immersion chamber, including above-mentioned arc chamber.
The arc chamber interior of the utility model has the liner plate of covering chamber wall inner surface, generates plasma in arc chamber
The gaseous impurities formed in the process will not directly be contacted with chamber wall surface, but be contacted with backing surface, be formed in backing surface
Deposit film.When needing to remove deposit film, it is only necessary to remove liner plate and clear up, cleaning efficiency can be improved.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the arc chamber of one specific embodiment of the utility model；
Fig. 2 is the schematic cross-section of the arc chamber of one specific embodiment of the utility model.
Specific embodiment
With reference to the accompanying drawing to the specific of a kind of arc chamber provided by the utility model and a kind of plasma immersion rifle
Embodiment elaborates.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is the structural schematic diagram of the arc chamber of one specific embodiment of the utility model；Fig. 2
For the schematic cross-section of arc chamber secant AA' along Fig. 1.
The arc chamber 100 includes locular wall 101, and the locular wall 101 constitutes a chamber；Positioned at the chamber of the arc chamber 100
The liner plate 102 of chamber interior and covering 101 inner surface of locular wall, the liner plate 102 are detachably secured to the locular wall 101
On inner surface.
It is additionally provided with heating wire in the arc chamber 100, makes the gas in arc chamber 100 electric by heating heating wire
From formation plasma.During this, gaseous impurities, such as metal oxide etc., if with arc chamber 100 can be generated
Locular wall 101 contacts the inner surface that can be deposited on locular wall 101, forms deposit film.In the specific embodiment, the locular wall
101 inner wall surface has liner plate 102, and the liner plate 102 covers the exposed surface of 101 inner wall of locular wall, therefore gaseous impurities is not
It can directly contact with the inner surface of the locular wall 101, but be contacted with 102 surface of liner plate, to be deposited on the liner plate
102 surfaces form deposit film.It is maintained to the arc chamber 100, when removing the deposit film, it is only necessary to
Liner plate 102 is directly disassembled, is cleaned, elimination efficiency can be improved.Also, it will not be to the room of arc chamber 100
Wall 101 causes to be lost.
The locular wall 101 has gas access 103 and ion beam outlet 104；The gas access 103 is used for described
It is passed through gas in arc chamber 100, is used to form the plasma including electronics, the gas can be inert gas.In electric arc
The plasma formed in room 100 passes through 104 output of ion beam outlet.Corresponding, the liner plate 102 has and the gas
Body entrance 103 and ion beam export 104 corresponding openings.
In order not to change the formation environment of the plasma in arc chamber 100, the liner plate 102 and the arc chamber 100
Locular wall 101 material it is identical.In this specific embodiment, the material of the locular wall 101 of the arc chamber 100 is tungsten, described
Liner plate 102 is tungsten plate.In other specific embodiments, the liner plate 102 can also be other non-metallic conducting materials, such as
Graphite, SiC etc.；In other specific embodiments, the liner plate 102 can also use nonmetallic materials, such as glass, organic
Glass or other dielectric materials.
When due to removing deposit film every time, liner plate 102 can be caused to be lost, in order to improve the use time of liner plate 102
Number, the thickness that the liner plate 102 needs to have certain.In the specific embodiment, the liner plate 102 with a thickness of 0.5cm~
2cm, such as 1cm；In other specific embodiments, the thickness of the liner plate 102 may be other thickness.
In the specific embodiment, fitted closely between 101 inner surface of the liner plate 102 and the locular wall.It can pass through
Liner plate 102 is fixed on 101 inner surface of locular wall by the fixed forms such as screw.In other specific embodiments, the liner plate
There can also be certain interval between 102 and the inner surface of the locular wall 101, lead between 102 edge of liner plate and locular wall 101
It crosses sealing element and is removably secured connection, so that the gaseous impurity in arc chamber 100 can not be straight with 101 inner surface of locular wall
Contact.Those skilled in the art can select suitable fixing element as the liner plate 102 and locular wall as the case may be
Fixing element between 101.
101 inner surface of locular wall can also have other projecting members, such as heating wire etc..In order to enable the locular wall
101 exposed surface is completely covered, the work without influencing other projecting members, and the liner plate 102 can be irregular component
Shape, or be spliced by more than two sub- liner plates, expose the projecting member.
Specific embodiment of the present utility model also provides a kind of plasma immersion rifle, the plasma immersion
Rifle includes arc chamber described in above-mentioned specific embodiment.The plasma immersion rifle during the work time, generation
Gaseous impurities forms deposit film on liner plate 102.When removing the deposit film, it is only necessary to liner plate 102 is removed, it is right
Liner plate 102 is cleaned, and scale removal process is simple and efficient, and enables to the removing of deposit film more thorough, can also be reduced
The downtime of equipment.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (8)
1. a kind of arc chamber characterized by comprising
Locular wall, the locular wall constitute a chamber；
In the chamber and the liner plate of the covering chamber wall inner surface, the liner plate are detachably secured in the locular wall
On surface.
2. arc chamber according to claim 1, which is characterized in that there is the locular wall gas access and ion beam to go out
Mouthful；The liner plate has opening corresponding with the gas access and ion beam outlet.
3. arc chamber according to claim 1, which is characterized in that the liner plate is identical as the material of the locular wall.
4. arc chamber according to claim 1, which is characterized in that the liner plate is tungsten plate.
5. arc chamber according to claim 1, which is characterized in that the liner plate with a thickness of 0.5cm~2cm.
6. arc chamber according to claim 1, which is characterized in that closely pasted between the liner plate and the chamber wall inner surface
It closes.
7. arc chamber according to claim 1, which is characterized in that the liner plate includes more than two sub- liner plates.
8. a kind of plasma immersion rifle characterized by comprising the electric arc as described in any one of claims 1 to 7
Room.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821519444.6U CN208954933U (en) | 2018-09-17 | 2018-09-17 | Arc chamber and plasma immersion rifle |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821519444.6U CN208954933U (en) | 2018-09-17 | 2018-09-17 | Arc chamber and plasma immersion rifle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208954933U true CN208954933U (en) | 2019-06-07 |
Family
ID=66738332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821519444.6U Expired - Fee Related CN208954933U (en) | 2018-09-17 | 2018-09-17 | Arc chamber and plasma immersion rifle |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208954933U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277297A (en) * | 2019-06-20 | 2019-09-24 | 上海华力微电子有限公司 | Electron generating and ion implantation device |
| JP2022540503A (en) * | 2019-07-18 | 2022-09-15 | インテグリス・インコーポレーテッド | Ion implantation system using a mixture of arc chamber materials |
-
2018
- 2018-09-17 CN CN201821519444.6U patent/CN208954933U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110277297A (en) * | 2019-06-20 | 2019-09-24 | 上海华力微电子有限公司 | Electron generating and ion implantation device |
| JP2022540503A (en) * | 2019-07-18 | 2022-09-15 | インテグリス・インコーポレーテッド | Ion implantation system using a mixture of arc chamber materials |
| US11682540B2 (en) | 2019-07-18 | 2023-06-20 | Entegris, Inc. | Ion implantation system with mixture of arc chamber materials |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6801851B2 (en) | Substrate processing system, ion implantation system, and beamline ion implantation system | |
| EP0637055B1 (en) | Plasma processing apparatus | |
| TW201214522A (en) | Sputtering chamber, pre-clean chamber and plasma processing apparatus | |
| US20140087092A1 (en) | Plasma deposition on a partially formed battery through a mesh screen | |
| US20200395198A1 (en) | Physical vapor deposition (pvd) chamber with in situ chamber cleaning capability | |
| SE503141C2 (en) | Apparatus for generating linear arc discharge for plasma processing | |
| JP2023536546A5 (en) | ||
| CN208954933U (en) | Arc chamber and plasma immersion rifle | |
| CN214012895U (en) | Novel ion source neutralizer | |
| TWI659493B (en) | Substrate processing apparatus, substrate processing system, and substrate processing method | |
| KR101020075B1 (en) | Inductively coupled plasma reactor | |
| US8592783B2 (en) | Titanium diboride coating for plasma processing apparatus | |
| CN103820758B (en) | Physical vapor deposition device | |
| JP3958869B2 (en) | MgO film forming method and panel | |
| JP3958870B2 (en) | Vacuum deposition system | |
| US20180358212A1 (en) | System configured for sputter deposition on a substrate, shielding device for a sputter deposition chamber, and method for providing an electrical shielding in a sputter deposition chamber | |
| KR20110028414A (en) | Sputtering Device Using Multiple External Discharge Tubes | |
| KR20120085536A (en) | Mesh-acceleration type plasma cleaning device with applying a magnetic field | |
| KR101272101B1 (en) | The atmospheric plasma header | |
| KR20110028415A (en) | Sputtering Device Using Inductively Coupled Plasma | |
| CN108701577A (en) | Cathode for plasma processing apparatus | |
| KR20110028413A (en) | Sputtering Device Using Multiple External Discharge Tubes | |
| CN115896757A (en) | High-efficient ability PECVD device that falls | |
| KR20010053749A (en) | Ionic Metal Plasma Device | |
| KR101546447B1 (en) | Baffle and substrate treating apparatus including the baffle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190607 |