DE1512637B2

DE1512637B2 - FAST WORKING CIRCUIT ARRANGEMENT FOR REGENERATING DEFORMED IMPULSE SIGNALS WITH A GUNNEFFEKT SEMICONDUCTOR COMPONENT

Info

Publication number: DE1512637B2
Application number: DE19671512637
Authority: DE
Inventors: Michiyuki Scotch Plains NJ Uenohara (V St A )
Original assignee: Western Electric Co Inc
Current assignee: AT&T Corp
Priority date: 1966-04-12
Filing date: 1967-04-07
Publication date: 1971-02-18
Also published as: GB1185073A; BE696622A; DE1512637A1; NL6703734A

Description

1 21 2

Die Erfindung betrifft eine schnell arbeitende dann zur positiven Elektrode wandern und dort wie-The invention relates to a fast-working then migrate to the positive electrode and there again-

Schaltungsanordnung zum Regenerieren verformter der verschwinden. Hierbei bleibt, auch wenn die an-Circuit arrangement for regenerating the deformed disappearance. This remains, even if the other

Impulssignale, in der eine Belastung liegt. gelegte Spannung unter die Schwellwertspannung ge-Pulse signals in which there is a load. applied voltage below the threshold voltage

Bei Pulsmodulationssystemen, insbesondere bei senkt wird, eine gerade existierende Hochfeldzone den vielkanaligen Systemen für Fernsprechübertra- 5 bestehen und setzt ihre Wanderung zur positiven gungen, haben die Kosten und die Kompliziertheit Elektrode fort, solange die Spannung nur oberhalb der notwendigen Signalumwandlungsschaltungen In- eines bestimmten Minimalwertes V₃ zur Aufrechterteresse erregt. Zum Beispiel besitzt ein bekanntes haltung der wandernden Hochfeldzone bleibt.
Pulsmodulationssystem über 600 Sprechkanäle, so Im folgenden ist die Erfindung an Hand zweier in daß 1200 Signalumwandlungsschaltungen zum Re- io der Zeichnung dargestellter Ausführungsbeispiele begenerieren verformter Impulssignale in jeder End- schrieben; es zeigtIn pulse modulation systems, especially when lowers, a just existing high field zone, the multi-channel systems for telephone transmission exist and continue their migration to the positive, the cost and complexity of the electrode continue as long as the voltage is only above the necessary signal conversion circuits In- a certain minimum value V ₃ excited to the uprightness interest. For example, a well-known attitude has the migratory high-field zone remains.
Pulse modulation system over 600 speech channels. it shows

stelle des Systems erforderlich sind und ein Mehr- Fig. 1 das Schaltbild des ersten Ausführungsbeifaches dieser Anzahl längs der Übertragungsstrecke. spiels,place of the system are required and a multiple Fig. 1 shows the circuit diagram of the first embodiment this number along the transmission path. play,

Herkömmliche .tränsistorierte Schaltungen sind zu Fig. 2a bis 2c Signalformen zur Erläuterung derConventional .tränsistorierte circuits are shown in FIGS. 2a to 2c to explain the waveforms

aufwendig und kompliziert, um solche Pulssysteme 15 Arbeitsweise der Schaltung nach Fig. 1,expensive and complicated to make such pulse systems 15 operation of the circuit according to FIG. 1,

mit hoher Kapazität in Wettbewerb mit vorhandenen Fig. 3 das Schaltbild des zweiten Ausführungsbei-with high capacity in competition with the existing Fig. 3 shows the circuit diagram of the second embodiment

Multiplexsystemen treten zu lassen, ferner arbeiten spiels undTo let multiplex systems occur, also work games and

sie verhältnismäßig langsam. _: F i g. 4 a bis 4 c Signalformen zur Erläuterung derthey are relatively slow. _: F i g. 4 a to 4 c signal forms to explain the

Das Problem der Schaffung einer einfachen, billi- Arbeitsweise der Schaltung nach Fig. 3.
gen und doch schnell arbeitenden Regenerierschal- 20 F i g. 1 zeigt in Blockform die Grundelemente eines tung ist erfindungsgemäß nun dadurch gelöst, daß ■ Impulsregenerators. Das Gunneffekt-Halbleiterbauein Gunneffekt-Halbleiterbauelement, das bei an- element 10, dessen Halbleiterkörper typischerweise ('■ stehender Gleichspannung oberhalb einer Schwell- eine mit zwei im Abstand voneinander liegenden wertspannung wandernde Hochfeldzonen in seinem Elektroden versehene Galliumarsenid-Scheibe ist, Halbleiterkörper aufeinanderfolgend erzeugt, durch 25 liegt in Reihe mit einer Gleichspannungsquelle 11, eine mit ihm verbundene Vorspannungsquelle auf einer Quelle 12 für den zu regenerierenden Signaleine unterhalb der Schwellwertspannung liegende impulszug und einer Belastung 13. Die Vorspannung Spannung vorgespannt ist, und daß Schaltungsmittel V_B, die von der Spannungsquelle 11 geliefert wird, vorgesehen sind, die der Vorspannung zu regene- ist um so viel kleiner als die Schwellwertspannung rierende Eingangsimpulse derart überlagern, daß 30 F₇-, daß Schwingungen nicht schon durch Rauschdie Summe der Amplituden von Vorspannung und signale angestoßen werden. Die Einfügung der Vor-Eingangsimpulsen größer als die Schwellwertspan-' Spannungsquelle gestattet eine Verstärkung des nungist und im Halbleiterbauelement, zumindest eine regenerierten Impulszugs. Die Vorspannung soll Hochfeldzone von jedem Eingangsimpuls ausgelöst ferner geringer als die Spannung V₈ sein, die zur wird. ... ₃₅ Aufrechterhaltung einer wandernden HochfeldzoneThe problem of creating a simple, cheap operation of the circuit of FIG.
gen and yet fast-working regeneration bowls 20 F i g. 1 shows in block form the basic elements of a device is now achieved according to the invention in that ■ pulse regenerator. The Gunneffect semiconductor component, which in the case of an element 10, the semiconductor body of which is typically ('■ standing direct voltage above a threshold - a gallium arsenide disk provided with two spaced-apart value voltage wandering high field zones in its electrodes, successively generates semiconductor bodies, through 25 is in series with a DC voltage source 11, a bias voltage source connected to it on a source 12 for the signal to be regenerated, a pulse train below the threshold voltage and a load 13. The bias voltage is biased, and that circuit means V _B , which is supplied by the voltage source 11 is supplied, are provided that the bias voltage is to be regenerated so much smaller than the threshold voltage-changing input pulses are superimposed in such a way that 30 F ₇ - that vibrations are not triggered by noise, the sum of the amplitudes of the bias voltage and signals Insertion of the pre-input pulses greater than the threshold voltage source allows an amplification of the voltage and, in the semiconductor component, at least one regenerated pulse train. The bias voltage should also be lower than the voltage V ₈ , which is triggered by the high field zone triggered by each input pulse. ... ₃₅ Maintaining a migratory high field zone

Ersichtlich ist hiermit eine äußerst einfache Im- notwendig ist, wenn diese einmal ausgelöst wordenIt can be seen that an extremely simple im- is necessary once this has been triggered

pulsregenerierung möglich. ist. Die Spannung V₃ zur Aufrechterhaltung einerpulse regeneration possible. is. The voltage V ₃ to maintain a

Es werden also bei der Erfindung Halbleiterbau- wandernden Hochfeldzone darf nicht mit der Schwellelemente mit einem Halbleiterkörper aus einer halb- wertspannung F₇- zur Auslösung von wandernden leitenden Verbindung, z.B. Galliumarsenid, benutzt, 40 Hochfeldzonen und damit von Schwingungen verin welchem Instabilitäten durch den Übergang von . wechselt werden. Man hat festgestellt, daß jene »heißen« Elektronen zwischen zwei Leitungsband- ^; typischerweise etwa 95% der Schwellwertspannung tälern mit sehr unterschiedlicher Beweglichkeit und F₇- beträgt. Da es vorliegend erwünscht ist, daß die / verschiedener Energie erzeugt werden. Derartige durch die Hochfeldzonen verursachten Schwingungen v_ Vorrichtungen sind als Gunneffekt-Halbleiterbau- 45 möglichst mit dem Ende^?eines jeden »echten« Imelement bekannt; ihre Theorie ist eingehend in einer ,.',. pulses des Impulszuges aufhören, soll die Vorspan-Reihe von Aufsätzen in der Januar-Ausgabe 1966 der nung dicht unterhalb der Spannung F₅, typischer-IEEE Transactions on Electron Devices, Band weise bei etwa 94 % der Schwellwertspannung, liegen. ED-13, Nr. Ij beschrieben. . ..Jedoch kann es, wenn die Amplitude der Signalim-In the case of the invention, high-field zones that migrate in the semiconductor construction must not be used with the threshold elements with a semiconductor body from a half-value voltage F ₇ - to trigger the conductive connection, e.g. gallium arsenide, 40 high-field zones and thus vibrations in which instabilities due to the transition from . be changed. It has been found that those "hot" electrons are between two conduction band- ^; typically around 95% of the threshold voltage valleys with very different mobility and F ₇ - is. Since it is presently desirable that the / various energies are generated. Such vibrations caused by the high field zones v_ devices are as Gunneffect semiconductor structures as far as possible with the end ^? of every "real" Im-element known; their theory is detailed in a '.' ,. pulses of the pulse train stop, the preamble series of articles in the January 1966 issue of the voltage is said to be just below the voltage F ₅ , more typically IEEE Transactions on Electron Devices, band wise at about 94% of the threshold voltage. ED-13, No. Ij. . ..However, if the amplitude of the signal im-

Wie dort i'ni einzelnen erläutert ist, steigt, wenn 5° pulse ausreichend groß ist, möglich sein, auf die die an die Enden eines solchen Halbleiters angelegte Gleichspannungsquelle zu verzichten. In diesem Falle Spannung erhöht wird, der mittlere Strom durch den wird aber keine Verstärkung bewirkt.
Halbleiterkörper weitgehend linear auf einen Maxi- Die Impulszugquelle 12 kann verschiedene Formen malwert an und fällt dann ab einer bestimmten, Span- annehmen. Sie kann die Ausgangsstufe eines Vernung plötzlich auf einen Bruchteil dieses Maximal- 55 stärkers sein, der das empfangene Signal zugeführt wertes ab, um dann oberhalb dieser kritischen Span- .wird. In anderen Fällen kann sie die Antenne sein, nung im wesentlichen konstant auch auf diesem ver- die die empfangenen Signale abgibt,
ringerten Stromwert zu bleiben. Wenn man dabei die . Die Art der Belastung 13 hängt ebenfalls von dem Momentanstromform untersucht, findet man, daß sie Zweck ab, dem die Impulsregenerierung dient. Wie periodisch mit einer Frequenz schwingt, die von der 60 noch erläutert wird, kann die Ausgangsinformation Länge des Halbleiterkörpers zwischen den Elektro- auf verschiedene Weise abgenommen werden, den abhängt. Diese kritische Spannung, die den Ab- Weiterhin kann offensichtlich das gewünschte Ausfall des Halbleiterstroms und den Einsatz der gangssignal auch dadurch erhalten werden, daß die Schwingungen kennzeichnet, wird die Schwellwert- Belastung zum Halbleiterbauelement parallel gespannung F₇- für die Schwingungen genannt. 65 schaltet wird.As explained there in detail, if 5 ° pulse is sufficiently large, it will be possible to dispense with the DC voltage source applied to the ends of such a semiconductor. In this case the voltage is increased, but the mean current through the is not amplified.
Semiconductor body largely linear to a maximum. It can suddenly be the output stage of a Vernung to a fraction of this maximum amplifier, which devalues the received signal, and then becomes above this critical voltage. In other cases, it can be the antenna, which is essentially constant and emits the received signals,
to stay reduced current value. If you are doing the. The type of load 13 also depends on the instantaneous current form examined, it is found that it depends on the purpose of the pulse regeneration. As it oscillates periodically at a frequency that will be explained by FIG. 60, the output information length of the semiconductor body between the electrodes can be picked up in various ways, which depends. Furthermore, the desired failure of the semiconductor current and the use of the output signal can obviously also be obtained by characterizing the oscillations, the threshold load to the semiconductor component is called voltage F ₇ - for the oscillations. 65 is switched.

Es gilt nun als gesichert, daß die Schwingungen mit In Fig. 2 a ist die Form der verschiedenen inter-It is now considered certain that the vibrations with In Fig. 2a is the form of the various inter-

der aufeinanderfolgenden Bildung von Hochfeld- essierenden angelegten Spannungen dargestellt. Diethe successive formation of high field eater applied voltages. the

zonen an der negativen Elektode verbunden sind, die punktierte Linie 21 zeigt die Spannung V_B, die vonZones are connected to the negative electrode, the dotted line 21 shows the voltage V _B that of

Claims

3 43 4

the source 11 is supplied and which the changing is determined in the manner in which this voltage supplied by the pulse train source 12 is characteristic of semiconductor components.
is pressed so that the actually pending In F i g. 3, a second embodiment voltage is shown schematically, as shown by the solid line 22, in which an analog signal is in the form. This changing voltage is encoded in a pulse position modulation train. This speaks of a pulse train which originally had the form shown in Gunn effect semiconductor component 31 as shown in FIG. 2b and was then distorted in a transmission in series with a DC voltage source 32. The threshold voltage source 33 for the analog signal to be coded and voltage V _T for initiating oscillations is due to a load 34. Again, the voltage V _{B is shown by} the dashed line 23. 10 of the source 32 chosen so that a bias on

In Fig. 2 b is maintained on the same time scale as in component 31, which is slightly below

F i g. 2 a shows the mean current that _{lies through the value F 5} , at which the initiated oscillation

the semiconductor flows. It can be seen that the middle gene is maintained, with the insertion

Current suddenly drops when the applied voltage of the voltage source makes it possible to achieve an amplification

rises above the threshold voltage, it is then enabled.

relatively insensitive to changes in the In Fig. 4a to 4c, the shapes of the corresponding

applied voltage until the applied voltage corresponds to the voltages and the current in the

falls below the threshold voltage again. Actual circuit shown. Fig. 4a shows the from

However, the oscillations, that is to say the constant voltage supplied to the voltage source 32, actually last

State with low average current, so long on, 20 V _B as dotted line 41, furthermore the threshold

until the applied voltage is below the voltage value V _T that must be exceeded,

maintenance of vibrations necessary value V _s , "so that the voltages start through which

which is slightly lower than the threshold _{voltage F 7} - shown by dashed line 42. The voltage F _s to

is falling off. This phenomenon arises as a result of the maintenance of vibrations, under which

Transient effects. The smaller the product nL is 25 the applied voltage has to fall in order to

(where η, the charge carrier density in the semiconductor process to end, is not shown. But should

and L is the length of the semiconductor body between which it is advantageously close to the limit voltage

Electrodes), the closer the voltage V _s is and greater than the constant bias voltage V _B

at the threshold voltage F ₇ -. Be accordingly. The solid line 43 shows the actual

the difference can be determined by suitable dimensioning 30 of the pending voltage, which is the superposition of the to

of the semiconductor and the associated circuit encoding analog voltage via the constant

must be kept small to correspond to excessive react bias.

dance to prevent. Conversely, the difference in Fig. 4b is the average in the circuit

if desired, increased flowing current can be shown by increasing nL. Characteristic is especially

will. 35 special that the mean current suddenly then

It is characteristic that, during the time interval, it drops when the applied voltage exceeds the Schwellin which the mean current is small, also exceeds a value voltage.

Oscillating current flows in the circuit, which is superimposed on a constant current in FIG. 4c. FIG. 2c shows the load under the condition envelope curve of the oscillating current _{/ 0 shown in FIG. 4a, which is shown in FIG.} As here also correspond to those of the circuit flows. Obviously there are different leading edges 45 of the "negative" deflections of the given possibility to derive the output information pulse train from the times at which the pending information is derived from the original pulse train. Voltage exceeds the limit voltage.

Firstly, since the current flowing through the circuit allows the coding of the form of an original pulse train (apart from the analog signal in a pulse position code, which specializes in reversing the sign), the siert transmission system can also be used.
Average voltage across a load resistor that The switching arrangements described here would have the desired shape. Accordingly, this can be simplified by omitting all elements except for the basic voltage for further use as the signal elements in order to provide the display of a pulse train. In this case it is 50 easier. Typically, however, it is advantageous to operate that of the constant component at frequencies at which ribbon lines filter out collateral oscillating components. axial cable or waveguide with the switching elements

Secondly, since the envelope of the in the circuit connect to each other,
flowing oscillating current corresponds to the desired regenerated pulse train, the envelope of the 55

Oscillation voltage at a load resistor, the claims

desired initial form; accordingly, this ^p
Voltage for further use as the signal

to be used. In this case it is advantageous to use the 1st fast-working circuit arrangement remove constant component. 60 for regenerating deformed pulse signals, in

Which of the two methods described is responsible for the one exposure is identified by this

Derivation of the desired regenerated pulse indicates that a Gunn effect semiconductor component

is also preferable, depends on the type of further element (10) that is present when the DC voltage is applied

Using the derived pulse train. If oscillating current is used above a threshold _{voltage (F 7} -), the dissipating high field zone exists in its semiconductor body

directed train of impulses generated from a sequence of oscillation successively, through one with it

bursts of energy, the frequency of the vibrations connected to a bias voltage source (11)

lying below the threshold voltage due to the geometric shape of the semiconductor body

Voltage (F _ß ) is biased, and that circuit parts (12) are provided in which the input pulses to be regenerated are superimposed on the bias voltage in such a way that the sum (22) of the amplitudes of the bias voltage and input pulses is greater than the Schwellwertspanüung and in the semiconductor component at least a high field zone is triggered by each input pulse.

2. A circuit according to claim 1, characterized in that the load is an 'alternating current detector to place the oscillation component of the semiconductor device having flowing current.

1 sheet of drawings