DE2247160C3

DE2247160C3 - Amplitude-controlled generator

Info

Publication number: DE2247160C3
Application number: DE2247160A
Authority: DE
Inventors: Gerhard Dipl.-Ing. 8031 Puchheim Thanhaeuser
Original assignee: Siemens AG
Current assignee: Siemens AG
Priority date: 1972-09-26
Filing date: 1972-09-26
Publication date: 1975-07-03
Also published as: DE2247160A1; DE2247160B2

Description

40 Die Amplitudenregelung der Schwingschaltung erfolgt mit Hilfe des als steuerbare Gleichstromquelle arbeitenden Transistors Ts 5. Beim Anschwingen des Generators ist der Transistor Ts5 durch den Basisvorwiderstand durchgeschaltet. Der Feldeffekttransistor40 The amplitude control of the oscillating circuit takes place with the aid of the transistor Ts 5, which works as a controllable direct current source. When the generator starts to oscillate , the transistor Ts5 is switched through by the base series resistor. The field effect transistor

Die Erfindung betrifft einen amplitudengeregelten 45 Ts 1 arbeitet dann mit dem maximal möglichen AbGenerator mit einem Feldeffekttransistor in einer flußstorm und der damit gegebenen Vorwärtssteilquarzstabilisierten Colpitts-Schaltung, in der die Tor- heit. Erreicht die Ausgangswechselspannung einen elektrode mit dem Anfang eines kapazitiven Span- Spitzenwert von 0,6 V, so beginnen die Dioden D 1 nungsteilers, dessen Ende zusammen mit der Abfluß- und D 2 zu leiten und reduzieren den Basisstrom des elektrode des Feldeffekttransistors vorzugsweise 50 Transistors TsS. Dabei sinkt der Abflußstrom des geerdet ist, verbunden ist, bei dem nach dem Haupt- Feldef fekttransistors Ts 1, bis die Vorwärtssteilheit patent 1 766 840 in der Gleichstromzuführung zur bzw. die Verstärkung den für den stationären Quellenelektrode des Feldeffekttransistors zwischen Schwingzustand bzw. die Verstärkung den für den dieser und dem Bezugspotential die Emitter-Kollek- stationären Schwingzustand erforderlichen Wert ertorstrecke eines Regeltransistors eingefügt ist, daß 55 reicht hat. Als Führungsgröße der Amplitudenregebei Zuführung einer Regelgleichspannung an die Ba- lung dient eine Diodenschwellspannung.
sis des Regeltransistors der Arbeitspunkt des Oszilla- Die Schwingstufe arbeitet in kapazitiver Dreitor-Feldeffekttransistors entsprechend geregelt wird. punktschaltung. Die in der Sourceführung liegende In dem Hauptpatent 1 766 840 wurde bereits ein Induktivität L ist so bemessen, daß die wechselamplitudengeregelter Generator mit einem Feldef- 60 strommäßige Parallelschaltung dieser Induktivität fekttransistor und einem Schwingquarz beschrieben, über den Abblockkondensator C 5 mit der Dreibei dem in der Gleichstromzuführung des Feldeffekt- punktkapazität Cl bei dem Grundton der Dickentransistors die Emitter-Kollektorstreckc eines Regel- schtningsresonanz induktiv und beim gewünschten transistors angeordnet ist. Oberton kapazitiv wirki. Damit wird ein Anschwin-Diese Schaltung hat den Vorteil, daß man eine g₅ gen bei der Frequenz des Grundtones vermieden. Die schwingkreisfreie Quarzoszillatorschaltung erhält, bei Parallelresonanz von L und C 1 soll nicht zu weit der ein schneller Frequenzwechsel allein durch Aus- oberhalb der Frequenz des Grundtones liegen, um wechseln des Quarzes möglich ist. Man erreicht fer- den Einfluß der Induktivität bei der SollfrequenzThe invention relates to an amplitude- regulated 45 Ts 1 then works with the maximum possible output generator with a field effect transistor in a flux current and the forward partial quartz-stabilized Colpitts circuit in which the folly. If the output AC voltage reaches an electrode with the beginning of a capacitive peak peak value of 0.6 V, the diodes D 1 voltage divider begin to conduct its end together with the drain and D 2 and reduce the base current of the electrode of the field effect transistor, preferably 50 transistor TsS. The outflow current of the grounded, connected is reduced, in which after the main field effect transistor Ts 1, until the forward steepness patent 1 766 840 in the direct current supply to or the amplification for the stationary source electrode of the field effect transistor between the oscillating state or the amplification the value required for this and the reference potential of the emitter-collector steady-state oscillation is inserted into the output path of a control transistor that is 55 enough. A diode threshold voltage is used as the reference variable for the amplitude control when a DC control voltage is supplied to the ball.
sis of the control transistor the operating point of the oscillator The oscillating stage works in a capacitive three-port field effect transistor and is regulated accordingly. point switching. In the main patent 1 766 840, an inductance L has already been dimensioned so that the alternating-amplitude-regulated generator with a field flow-wise parallel connection of this inductance fekttransistor and an oscillating crystal is described, via the blocking capacitor C 5 with the three in the Direct current supply of the field-effect point capacitance C1 with the fundamental tone of the thick transistor, the emitter-collector stretch of a regulating resonance resonance is inductive and is arranged with the desired transistor. Overtone capacitive effective This circuit has the advantage that a g ₅ gene at the frequency of the fundamental tone is avoided. With parallel resonance of L and C 1, the resonant circuit-free quartz oscillator circuit should not be too far that a quick frequency change simply by switching off is above the frequency of the fundamental tone in order to change the quartz is possible. The influence of the inductance is also achieved at the set frequency

klein zu halten. Diese bewirkt dann lediglich eine Verkleinerung der wirksamen Kapazität von C1.to keep it small. This then only has the effect of reducing the effective capacity of C 1.

Auf die Schwingstufe folgt zum Zweck der Entkopplung des Ausganges vcm Oszillator ein dreistufiger Trennverstärker Ts 2, Ts 3, Ts 4 mit je einem Emitterfolger am Eingang und am Ausgang Der Verstärker ist galvanisch gekoppelt. Zur Erzielung einer VVechselspannuiigsverstärkung ist der Emitterwiderstand R 9 des Transistors Ts 3 mit dem Widerstand R 10 und dem Kondensator C 8 überbrückt.The oscillating stage is followed by a three-stage isolating amplifier Ts 2, Ts 3, Ts 4 with an emitter follower each at the input and at the output for the purpose of decoupling the output vcm oscillator. The amplifier is galvanically coupled. The emitter resistor R 9 of the transistor Ts 3 is bridged with the resistor R 10 and the capacitor C 8 in order to achieve a V alternating voltage gain.

Hierzu 1 Blatt Zeichnungen 1 sheet of drawings

Claims

1 21 2

ner a low-distortion overdrive-free operation

Claim: the vibration level.

The object of the present invention is to under

Amplitude-controlled generator with retention of these advantages an amplitude-controlled field effect transistor in a quartz stabilization.
the beginning of a capacitive voltage divider, the amplitude-regulated generator is formed according to its end together with the drain electrode of the invention to solve this problem from the field effect transistor is preferably grounded that is connected between the source electrode of the field, in which the quartz continues to the io fekttransistor and collector of the Regulating transistor capacitive voltage divider connected in parallel is an inductance which is dimensioned so that the tap is connected to the source electrode of the alternating current parallel connection of this inductive field effect transistor and with the activity on the collector of the control transistor according to the main patent 1 766 840 in the Dyke-lying blocking capacitor with one three-current supply to the source electrode of the field effect 15 point capacitance of the capacitive voltage divider with fect transistor between this and the reference the fundamental tone of the thickness shear resonance of the potential the emitter K Collector path of a Re-quartz is inductive and inserted into the desired oscillating gel transistor, such that at feed frequency is capacitive and that the parallel resonance of a control DC voltage to the base of the inductance and the three-point capacitor only control transistor, the operating point of the oscillator 20 is slightly above the Frequency of the fundamental gate field effect transistor is regulated accordingly of the quartz oscillator.

is characterized in that these measures cause an oscillation

between the source electrode of the field effect transi- at the frequency of the fundamental tone of the quartz

stors and collector of the control transistor one in the middle. This means that this generator can also be used as a

ductivity (L), which is dimensioned so that the 25 Obeiton generator are used, which in particular

AC parallel connection of these Indians with a view to use as a basic generator

in carrier frequency systems, which is of essential importance at the collector of the control

stors lying blocking capacitor (CS) with device.

the one three-point capacitance (C 1) of the capacitive- The invention is explained in more detail using the figure

ven voltage divider at the fundamental tone of the dik- 3 ° purifies.

The shear resonance of the quartz is inductive and the gate electrode of the field effect transistor Ts 1 is

at the desired oscillation frequency capacitive with one end and one with its other end

is and that the parallel resonance of the inductance connected to ground capacitive voltage divider with

(L) and the three-point capacitor (Cl) are only connected to the capacitors C1, C2. Parallel to the

slightly above the frequency of the fundamental 35 sem voltage divider is the quartz crystal, which is to

of the quartz crystal. For purposes of comparison, the two parallel ones

Capacitors C 3, C 4 are connected in series. The drain electrode of the field effect transistor is also connected to ground.