GB2109010B - Spacer for conductive plase in rf plasma reactor used in chemical vapour deposition - Google Patents

Spacer for conductive plase in rf plasma reactor used in chemical vapour deposition

Info

Publication number: GB2109010B
Authority: GB; United Kingdom
Prior art keywords: plase; spacer; conductive; vapour deposition; plasma reactor
Prior art date: 1981-11-12
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08220199A

Other versions

GB2109010A (en

Inventor

Richard S Rosler

George M Engle

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

ADVANCED SEMICONDUCTOR MAT

Advanced Semiconductor Materials America Inc

Original Assignee

ADVANCED SEMICONDUCTOR MAT

Advanced Semiconductor Materials America Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-11-12

Filing date

1982-07-12

Publication date

1985-11-20

1982-07-12 Application filed by ADVANCED SEMICONDUCTOR MAT, Advanced Semiconductor Materials America Inc filed Critical ADVANCED SEMICONDUCTOR MAT

1983-05-25 Publication of GB2109010A publication Critical patent/GB2109010A/en

1985-11-20 Application granted granted Critical

1985-11-20 Publication of GB2109010B publication Critical patent/GB2109010B/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Plasma & Fusion (AREA)
Materials Engineering (AREA)
Chemical Kinetics & Catalysis (AREA)
General Chemical & Material Sciences (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Analytical Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Physical Or Chemical Processes And Apparatus (AREA)

GB08220199A 1981-11-12 1982-07-12 Spacer for conductive plase in rf plasma reactor used in chemical vapour deposition Expired GB2109010B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US32045381A	1981-11-12	1981-11-12

Publications (2)

Publication Number	Publication Date
GB2109010A GB2109010A (en)	1983-05-25
GB2109010B true GB2109010B (en)	1985-11-20

Family

ID=23246502

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08220199A Expired GB2109010B (en)	1981-11-12	1982-07-12	Spacer for conductive plase in rf plasma reactor used in chemical vapour deposition

Country Status (5)

Country	Link
JP (1)	JPS607937B2 (en)
DE (1)	DE3235504A1 (en)
FR (1)	FR2516339B1 (en)
GB (1)	GB2109010B (en)
NL (1)	NL8204404A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60211823A (en) *	1984-04-06	1985-10-24	Agency Of Ind Science & Technol	Forming apparatus for thin film semiconductor device
US5527439A (en) *	1995-01-23	1996-06-18	The Boc Group, Inc.	Cylindrical magnetron shield structure
DE102011109444A1 (en) *	2011-08-04	2013-02-07	Centrotherm Photovoltaics Ag	Spacing element for clamping unit used in plates of wafer boat, has communication port that is extended along transverse direction to base portion through hole which is extended between front ends of base portion in length direction
KR20190104040A (en) *	2017-01-27	2019-09-05	울트라테크 인크.	Chuck system and method with improved electrical isolation for substrate-biased atomic layer deposition
CN110660698B (en) *	2018-06-28	2022-04-22	北京北方华创微电子装备有限公司	Compression ring assembly, process chamber and semiconductor processing equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3566185A (en) *	1969-03-12	1971-02-23	Atomic Energy Commission	Sputter-type penning discharge for metallic ions
US4058748A (en) *	1976-05-13	1977-11-15	Hitachi, Ltd.	Microwave discharge ion source
US4223048A (en) *	1978-08-07	1980-09-16	Pacific Western Systems	Plasma enhanced chemical vapor processing of semiconductive wafers
US4287851A (en) *	1980-01-16	1981-09-08	Dozier Alfred R	Mounting and excitation system for reaction in the plasma state

1982
- 1982-07-12 GB GB08220199A patent/GB2109010B/en not_active Expired
- 1982-08-26 FR FR8214650A patent/FR2516339B1/en not_active Expired
- 1982-08-30 JP JP57150636A patent/JPS607937B2/en not_active Expired
- 1982-09-24 DE DE19823235504 patent/DE3235504A1/en not_active Withdrawn
- 1982-11-12 NL NL8204404A patent/NL8204404A/en not_active Application Discontinuation

Also Published As

Publication number	Publication date
GB2109010A (en)	1983-05-25
JPS5884037A (en)	1983-05-20
NL8204404A (en)	1983-06-01
FR2516339B1 (en)	1986-04-11
FR2516339A1 (en)	1983-05-13
JPS607937B2 (en)	1985-02-28
DE3235504A1 (en)	1983-05-19

Legal Events

Date	Code	Title	Description
1989-03-08	PCNP	Patent ceased through non-payment of renewal fee

Publication	Publication Date	Title
GB2148328B (en)	1987-08-05	Chemical vapour deposition process
GB2113120B (en)	1985-11-20	Chemical vapour deposition apparatus
AU547820B2 (en)	1985-11-07	Transferred-arc plasma reactor
GB8623976D0 (en)	1986-11-12	Chemical vapour deposition reactor
DE3375028D1 (en)	1988-02-04	Apparatus for plasma chemical vapour deposition
DE3564290D1 (en)	1988-09-15	Chemical vapour deposition process
GB8525789D0 (en)	1985-11-20	Chemical vapour deposition
GB2156859B (en)	1987-01-28	Vacuum processing apparatus for chemical vapour deposition
EP0271341A3 (en)	1989-04-19	Ion etching and chemical vapour deposition
GB2093266B (en)	1984-11-21	A plasma processing chamber
GB2076587B (en)	1984-10-31	Plasma deposition apparatus
EP0145346A3 (en)	1987-08-19	Reactor and susceptor for chemical vapor deposition process
GB2119406B (en)	1986-01-29	Chemical vapour deposition apparatus
JPS55154585A (en)	1980-12-02	Plasma reactor
EP0252667A3 (en)	1988-08-17	Chemical vapour deposition methods
GB8327758D0 (en)	1983-11-16	Organosmetallic chemical vapour deposition of films
EP0326998A3 (en)	1989-11-15	Microwave chemical vapor deposition apparatus
GB2169003B (en)	1987-12-31	Chemical vapour deposition
GB8623978D0 (en)	1986-11-12	Chemical vapour deposition
GB2210387B (en)	1992-03-11	Chemical vapour deposition
GB2109010B (en)	1985-11-20	Spacer for conductive plase in rf plasma reactor used in chemical vapour deposition
AU8745282A (en)	1983-04-14	Vapor deposition
GB2093072B (en)	1985-06-05	Apparatus for physical vapour deposition
KR960015377B1 (en)	1996-11-11	Chemical vapor deposition reactor
GB2157324B (en)	1987-05-20	A plasma chemical vapor deposition apparatus