GB2123604A - Injection laser manufacture - Google Patents
Injection laser manufacture Download PDFInfo
- Publication number
- GB2123604A GB2123604A GB08231655A GB8231655A GB2123604A GB 2123604 A GB2123604 A GB 2123604A GB 08231655 A GB08231655 A GB 08231655A GB 8231655 A GB8231655 A GB 8231655A GB 2123604 A GB2123604 A GB 2123604A
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- United Kingdom
- Prior art keywords
- layer
- growth
- laser
- inp
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000002347 injection Methods 0.000 title claims description 11
- 239000007924 injection Substances 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000000903 blocking effect Effects 0.000 claims abstract description 29
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 24
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 23
- 230000000873 masking effect Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 2
- 230000006911 nucleation Effects 0.000 abstract description 2
- 238000010899 nucleation Methods 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005864 Sulphur Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A method of making a channel substrate buried heterostructure InP/(In, Ga) (As, P) laser avoids the need to use two separate stages of epitaxial growth by using a channel in a (100) surface substrate 1 extending in the Ä011Ü direction with ä111üB sides. This allows the channel to be made before the growth of an (In, Ga) (As, P) blocking layer 3 which can be grown under conditions which do not require the use of a mask to prevent nucleation on the channel sides. The same technique is also applicable to the manufacture of a terraced substrate laser incorporating a blocking layer. <IMAGE>
Description
SPECIFICATION
Injection laser manufacture
This invention relates to the manufacture of
injection lasers, and in particular to the
manufacture of lasers whose structure requires
them to be made by methods involving epitaxial
growth upon a non-planar substrate. Two such
laser types are the channelled substrate buried
heterostructure (CSBH) laser and the terraced
substrate (TS) laser. The invention is particularly
concerned with a manufacture that uses epitaxy to
grow the requisite structure, that involves the epitaxial growth of a blocking layer to produce reverse biassed junctions to constrict current flow, but does not require to interrupt the epitaxial growth for intermediate processing of a different technology type, such as masking and etching.
According to the present invention there is provided a method of making an injection laser in which in operation of the completed laser current flow through the laser active layer is confined at least in part by reverse biassed junctions provided by spaced apart parts of a blocking layer, wherein the blocking layer is grown by liquid phase epitaxy upor non-planar substrate presenting different crystal planes to the growth selected such that the growth produces the separated parts of the blocking layer without recourse to masking thereby permitting this growth to be directly succeeded, without interruption by intermediate processing technology of a different type, by the growth of further layers of the laser structure by liquid phase epitaxy.
Growth of the active layer material in a CSBH laser is confined to a strip registering with a channel in the underlying substrate material, and this feature is employed to give a measure of minority carrier and optical confinement in the lateral direction (the direction lying in the plane of the substrate surface that is at right angles to the laser axis). To provide a low threshold current for such devices it has been prior practice to provide reverse biassed junctions on either flank of the active region which will serve to block shunt current not passing through the active region.In the past this has been provided by using liquid
phase epitaxy to grow layers on a planar substrate to provide a reverse biassed junction, and then
after photolithography and etching of a channel
through this junction, growing the rest of the
structure in a second stage of liquid phase epitaxy
This procedure, involving two separated stages of
epitaxy, is rather complicated and time
consuming. In particular the degradation in
surface flatness resulting from the growth of the
first stage epitaxial layers can present problems in
providing acceptable photolithography in
preparation for the second stage of epitaxial
growth.
According to the present invention in its application to CSBH laser manufacture, there is
provided a method of making an InP/(ln,Ga)(As,P) channelled substrate buried heterostructure injection laser, which method includes the steps, of preparing a channel extending in the [011] direction with fi lii B sides in the (100) surface of an InP substrate of a first conductivity type;
of growing by liquid phase epitaxy a blocking layer of lattice matched (In,Ga)(As,P) of the opposite conductivity type on the substrate (100) surface under conditions of limited supersaturation that provide a discontinuous layer interrupted by a no-growth region on each of the two (1111 B channel sides;;
of growing by liquid phase epitaxy a lower passive layer of the first conductivity type of InP, or of lattice matched (In,Ga)(As,P), to cover the material of the blocking layer and partially, but not completely, fill the groove;
of growing on the lower passive layer by liquid phase epitaxy an active layer of lattice matched (In,Ga)(As,P) of lower band gap than the material of the lower passive layer under conditions that provide growth in the region registering with the channel, which growth is partially or completely pinched off in regions registering with the shoulders of the 11 1 1 j B channel sides; and of growing by liquid phase epitaxy an upper passive layer, which is of the opposite conductivity type to that of the lower passive layer, and is of
InP or of lattice matched (In,Ga)(As,P) of higher band gap material that that of the active layer, to cover the active layer.
The method of the invention, in its application to the manufacture of CSBH lasers, relies upon the fact that it has been found possible to achieve selective growth of (in,Ga)(As,P) on a channelled
InP substrate without masking. This is achieved by providing the channel with 11 1 J B walls in a (1 00) surface, and making use of the fact that epitaxial nucleation of (In,Ga)(As,P) occurs much more readily on the (100) surface than on f 111 I B surface. This same effect is used in the application of the invention to the manufacture of TS lasers.In a TS laser a measure of lateral optical waveguiding is provided for the active layer by growing it on a terraced substrate and making use of the fact that growth conditions can be arranged to ensure that the growth is thicker in the region registering with the terrace than in the flanking regions. Prior art methods of providing a blocking layer to produce reverse biassed junctions on either flank of the active region of a TS laser would have necessitated some form of masking and etching processing for the selective removal of the material of the blocking layer from the terrace or for prevention of its growth in this region. This processing would have necessitated interrupting the epitaxial growth, and so vitiated a major advantage of adopting the TS structure in the first place, namely the simplicity of its manufacture.
The present invention discloses how a blocking layer can be provided in a manner that without the use of a mask will result in no growth of blocking material in the region of the terrace.
According to the present invention in its application to TS laser manufacture, there is provided a method of making an InP/(ln,Ga)(As,P) terraced substrate injection laser, which method includes the steps,
of preparing an InP substrate of first conductivity type a terraced surface having upper and lower (100) surfaces joined by a 1111 B plane terrace::
of growing by liquid phase epitaxy a blocking layer of lattice matched (In,Ga)(As,P) of the opposite conductivity type on the terraced surface under conditions of limited supersaturation that provide a discontinuous layer interrupted by a nogrowth region on the { 1 1 1 } B terrace face;
of growing by liquid phase epitaxy a lower passive layer of the first conductivity type of InP, or of lattice matched (In,Ga)(As,P), to cover the blocking layer;;
of growing on the lower passive layer by liquid phase epitaxy an active layer of lattice matched (In,Ga)(As,P) of lower band gap than the material of the lower passive layer under conditions that provide growth in the region registering with the terrace, which growth is partially or completely pinched off in the region registering with the shoulder of the terrace; and
of growing by liquid phase epitaxy an upper passive layer, which is of the opposite conductivity type to that of the lower passive layer, and is of
InP or of lattice matched (In,Ga)(As,P) of higher band gap material that that of the active layer, to cover the active layer.
There follows a description of the method of making CSBH lasers and TS lasers embodying the invention in preferred forms, the description refers to the accompanying drawings in which
Figure 1 depicts a schematic cross-section of a
CSBH laser in a plane normal to the laser axis,
Figure 2 depicts an equivalent cross-section of a similar laser.
Figure 3 depicts a schematic cross-section of a
TS laser in a plane normal to the laser axis, and
Figure 4 is a sketch of a photomicrograph of the epitaxial grown layers of a TS laser structure.
Referring to Figure 1, the (100) surface of an n±type sulphur doped InP substrate 1 is provided with a pyrolytically deposited silica masking layer (not shown) in which is opened up a 2 micron wide window extending in the [01 ii direction (as distinct from the [011] direction). The surface is then etched in 1:1 HBr:H3PO4 typically for about
90 seconds to produce a channel with 11 1 1 } B
walls 2, before removing the silica mask with
buffered HF. The channelled substrate is then
placed in a boat ready for the growth of a
succession of layers by liquid phase epitaxy.
The first epitaxial layer to be grown is a
blocking layer 3 of lattice matched (In,Ga)(As,P) of
a composition possessing a band gap corresponding to an emission wavelength A equal to 1.05 ym, which is doped lightly with zinc to
render it p-type. This layer is grown under
conditions of limited supersaturation providing a
half micron thick layer in a total growth time of
between 2 and 10 seconds. This produces growth on the (100) substrate surface, but not on the B B sides of the channel. The choice of composition for this quaternary material growth is
somewhat arbitrary, with the particular
composition being chosen because detaiis of its
growth characteristics were already known from
other work not concerned with the present
invention.
The next layer to be grown is a lower passive
layer 4 of germanium doped n±type InP.
Alternatively tellurium or selenium can be substituted for the germanium. For this layer a total growth time of 10 seconds provides a layer
thickness of about 0.2 microns on the flat (100) surfaces. The junction between this material and the underlying blocking layer 3 provides a p-n junction which, in operation of the completed device, is reverse biassed and hence prevents shunt current flow in the wings of the device beyond the region registering with the channel.
A lattice matched active layer 5 of (In,Ga)(As,P) is next grown to cover the growth of the n-type
passive layer. The composition determines the emission wavelength, in this case A = 1.3 zm, and
it can be of either conductivity type. (An
alternative particularly favoured emission wavelength is A = 1.55 m). In this instance it is grown from undoped material, though there now
appears to be some suggestion that an advantage
may be secured in terms of temperature
performance by making it of n±type material.The
conditions of supersaturation are chosen in conventional manner for CSBH lasers so that layer
5 is preferably not continuous but contains an
active region 6 which is in registry with the
underlying channel but is completely separated from the two flanking regions overlying the (100)
surface portions of the substrate. In the active
region 6 the active layer is designed to be typically
about 0.2 microns thick at the thickest point
registering with the centre of the channel, and this
is achieved in a growth period of 3 seconds or
less. Complete pinch off of growth of the active
layer at the shoulders of the { 1111 B walls is not
essential since localised thinning of the active
layer in these regions will also produce a measure
of lateral waveguiding effect.
The active layer is then covered with an upper
passive layer 7 of p-type zinc doped InP so that a
p-n junction is formed at or near the upper surface
of the active region 6, its lower surface, or
somewhere in between. This is for the generation
of minority carriers when the laser is being
operated. This layer 7 is continuous, and
preferably is grown under conditions tending to fill
in the residual channelling to leave a substantially
planar upper surface. Typically a growth time in
the region of 100 seconds is employed to produce
a layer that is about 1.5 microns thick in the
regions remote from the underlying channel.
The final epitaxially grown layer is a thin
capping layer 8 of lattice matched p±type zinc
doped (In,Ga)(As,P) about 0.3 to 0.4 microns thick
provided to facilitate the making of an evaporated
contact with the p-type material. This can be
omitted, particularly if the contact is an alloyed
contact.
After all the layers have been grown the exposed surface is covered with an electrically insulating layer 9 for instance of r.f. plasma deposited silica through which a 5 to 10 micron wide window registering with the underlying channel is opened using standard photolithographic techniques. A shallow zinc diffusion may be performed at this stage, and then a standard evaporated contact layer 10 is applied.
This evaporated contact layer is provided by a triple evaporation, depositing first a layer of titanium, then a layer of platinum or palladium, and finally a layer of gold.
Preparation of this contact layer is followed by the preparation of an alloyed contact layer 11 for the n-type side. For this purpose a mixture of tin and gold is deposited by evaporation from an alloy source, is alloyed into the substrate, and then is covered by an evaporated layer of titanium, itself covered by an evaporated layer of gold.
Although the upper and lower passive layers have been described as being made of InP, either or both of them could have been lattice matched quaternary material, provided that the band gap in each case is kept larger than that of the material of the active layer so as to retain the appropriate conditions for optical guidance and carrier confinement.
Figure 2 depicts a generally similar structure of laser to that of Figure 1, but in this instance the profile of the channel in the substrate, and/or the growth conditions, are such that some growth of the blocking layer material occurs also at the bottom of the channel in the region 20. This produces an extra region of reverse biassed junction, but the current flow through the active region can bypass it in the regions indicated by the arrows 21.
Figure 3 depicts a section through the TS laser and from this it can be seen that the structure is in some respects equivalent to half a Figure 2 CSBH laser with an infinitely wide channel. The manufacturing processes for the two lasers are also closely similar in many respects. Thus the (100) surface of an n±type sulphur doped InP substrate 31 is provided with a pyrolytically deposited silica masking layer (not shown) and then the left half of this is removed to leave an edge extending across the middle of the (100) surface in the [011] direction (as distinct from the [01 1] direction). The surface is then etched in 1:1
HBr:H3PO4 typically for about 2 minutes, instead of the 90 seconds used for the CSBH laser, to give a slightly deeper etch.This produces the two levels of (100) plane linked by a fill I B terrace 32. Thereafter blocking, lower passive active, upper passive, and capping layers 33, 34, 35, 37 and 38 respectively are grown in the same manner as their counterparts 3, 4, 5, 7 and 8 in the CSBH laser. Similarly the laser is provided with a stripe contact by means of an evaporated contact layer 30 and masking layer 39, and an alloyed contact layer 41 is provided for the substrate, these contacts being provided in the manner described previously for the provision of the corresponding contacts 10 and 11.
Figure 4 is a sketch of a photomicrograph and shows that when the blocking layer 33 was grown the growth extended up the terrace to a height greater than the mean thickness of the layer, but that in the immediately adjacent region the growth thickness was reduced beneath average, possibly as a result of depletion effects. When the lower passive layer 34 was grown, the growth extended up the whole height of the original terrace, but not to the full height of the terrace as enlarged by the growth of the blocking layer. A small alteration of the growth conditions can be made to change this, in which case the growth of the active layer 34 can be made continuous rather than as divided into two regions by the shoulder of the enlarged terrace as shown in Figure 3. It is believed that the slight change in wall orientation resulting from the extension of growth up the terrace is the factor responsible for the initial growth registering with the terrace to be diminished so as to produce a divided blocking layer, whereas in the later growth of the active layer the growth registering with the terrace is enhanced so as to give the locally thickened region of the active layer required for lateral waveguiding.
Claims (10)
1. A method of making an injection laser in which in operation of the completed laser current flow through the laser active layer is confined at least in part by reverse biassed junctions provided by spaced apart parts of a blocking layer, wherein the blocking layer is grown by liquid phase epitaxy upon a non-pianar substrate presenting different crystal planes to the growth selected such that the growth produces the separated parts of the blocking layer without recourse to masking thereby permitting this growth to be directly succeeded, without interruption by intermediate processing technology of a different type, by the growth of further layers of the laser structure by liquid phase epitaxy.
2. A method as claimed in claim 1, wherein the laser is an InP/(ln,Ga)(As,P) laser.
3. A method of making an InP/(ln,Ga)(As,P) channelled substrate buried heterostructure injection laser, which method includes the steps,
of preparing a channel extending in the [011] direction with (1111 B sides in the (100) surface of an InP substrate of a first conductivity type;
of growing by liquid phase epitaxy a blocking layer of lattice matched (In,Ga)(As,P) of the opposite conductivity type on the substrate (100) surface under conditions of limited supersaturation that provide a discontinuous layer interrupted by a no-growth region on each of the two fiii I B channel sides;;
of growing by liquid phase epitaxy a lower passive layer of the first conductivity type of InP, or of lattice matched (In,Ga)(As,P), to cover the material of the blocking layer and partially, but not completely, fill the groove;
of growing on the lower passive layer by liquid phase epitaxy an active layer of lattice matched (In,Ga)(As,P) of lower band gap than the material of the lower passive layer under conditions that provide growth in the region registering with the channel, which growth is partially or completely pinched off in regions registering with the shoulders of the 11 1 1 } B channel sides; and
of growing by liquid phase epitaxy an upper passive layer, which is of the opposite conductivity type to that of the lower passive layer, and is of
InP or of lattice matched (In,Ga)(As,P) of higher band gap material that that of the active layer, to cover the active layer.
4. A method as claimed in claim 3, wherein the growth conditions are such that the growth of the active layer is completely pinched off in the regions registering with the shoulders of the fill I B channel sides.
5. A method of making an InP/(ln,Ga)(As,P) terraced substrate injection laser, which method includes the steps,
of preparing an InP substrate of first conductivity type a terraced surface having upper
and lower (100) surfaces joined by a (1111 B plane terrace;
of growing by liquid phase epitaxy a blocking
layer of lattice matched (In,Ga)(As,P) of the opposite conductivity type on the terraced surface under conditions of limited supersaturation that provide a discontinuous layer interrupted by a no-growth region on the I111) terrace face;
of growing by liquid phase epitaxy a lower passive layer of the first conductivity type of InP, or of lattice matched (In,Ga)(As,P), to cover the material of the blocking layer;;
of growing on the lower passive layer by liquid phase epitaxy an active layer of lattice matched (in,Ga)(As,P) of lower band gap than the material of the lower passive layer under conditions that provide growth in the region registering with the terrace, which growth is partially or completely pinched off in the region registering with the shoulder of the terrace; and
of growing by liquid phase epitaxy an upper passive layer, which is of the opposite conductivitv type to that of the lower passive layer, and is of
InP or of lattice matched (In,Ga)(As,P) of higher band gap material that that of the active layer, to cover the active layer.
6. A method as claimed in claim 3, 4 or 5, wherein the upper and lower passive layers are both grown in InP.
7. A method as claimed in claim 3, 4, 5 or 6, wherein the blocking layer is grown in p-type material.
8. A method of making an injection laser, substantially as described with reference to
Figures 1 and 2 of the accompanying drawings.
9. A method of making an injection laser, substantially as described with reference to
Figures 3 and 4 of the accompanying drawings.
10. A laser made by the method claimed in any preceding claim.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08231655A GB2123604B (en) | 1982-06-29 | 1982-11-05 | Injection laser manufacture |
| DE19833322531 DE3322531A1 (en) | 1982-06-29 | 1983-06-23 | METHOD FOR PRODUCING AN INJECTION LASER |
| US06/508,293 US4509996A (en) | 1982-11-05 | 1983-06-24 | Injection laser manufacture |
| FR8310634A FR2529399A1 (en) | 1982-06-29 | 1983-06-28 | METHOD FOR MANUFACTURING INJECTION LASER |
| JP58116284A JPS5956787A (en) | 1982-06-29 | 1983-06-29 | Manufacturing method of injection laser |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8218752 | 1982-06-29 | ||
| GB08231655A GB2123604B (en) | 1982-06-29 | 1982-11-05 | Injection laser manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2123604A true GB2123604A (en) | 1984-02-01 |
| GB2123604B GB2123604B (en) | 1985-12-18 |
Family
ID=26283210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08231655A Expired GB2123604B (en) | 1982-06-29 | 1982-11-05 | Injection laser manufacture |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE3322531A1 (en) |
| FR (1) | FR2529399A1 (en) |
| GB (1) | GB2123604B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987000694A1 (en) * | 1985-07-20 | 1987-01-29 | Plessey Overseas Limited | Method for producing a heterostructure device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
| GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1065460A (en) * | 1975-06-23 | 1979-10-30 | Robert D. Burnham | Buried-heterostructure diode injection laser |
| GB2046983B (en) * | 1979-01-18 | 1983-03-16 | Nippon Electric Co | Semiconductor lasers |
| JPS5723292A (en) * | 1980-07-16 | 1982-02-06 | Sony Corp | Semiconductor laser device and manufacture thereof |
-
1982
- 1982-11-05 GB GB08231655A patent/GB2123604B/en not_active Expired
-
1983
- 1983-06-23 DE DE19833322531 patent/DE3322531A1/en not_active Withdrawn
- 1983-06-28 FR FR8310634A patent/FR2529399A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
| GB1570479A (en) * | 1978-02-14 | 1980-07-02 | Standard Telephones Cables Ltd | Heterostructure laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987000694A1 (en) * | 1985-07-20 | 1987-01-29 | Plessey Overseas Limited | Method for producing a heterostructure device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2529399A1 (en) | 1983-12-30 |
| GB2123604B (en) | 1985-12-18 |
| DE3322531A1 (en) | 1983-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19941105 |