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GB2134709B - Semiconductor device and fabrication method thereof - Google Patents
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GB2134709B - Semiconductor device and fabrication method thereof - Google Patents

Semiconductor device and fabrication method thereof

Info

Publication number
GB2134709B
GB2134709B GB08402099A GB8402099A GB2134709B GB 2134709 B GB2134709 B GB 2134709B GB 08402099 A GB08402099 A GB 08402099A GB 8402099 A GB8402099 A GB 8402099A GB 2134709 B GB2134709 B GB 2134709B
Authority
GB
United Kingdom
Prior art keywords
oxide film
bonding pad
aluminum
semiconductor device
aluminum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08402099A
Other versions
GB8402099D0 (en
GB2134709A (en
Inventor
Tomotsu Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56115080A external-priority patent/JPS5817627A/en
Priority claimed from JP56115082A external-priority patent/JPS5817629A/en
Priority claimed from JP56115081A external-priority patent/JPS5817628A/en
Priority claimed from JP56122994A external-priority patent/JPS5825241A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8402099D0 publication Critical patent/GB8402099D0/en
Publication of GB2134709A publication Critical patent/GB2134709A/en
Application granted granted Critical
Publication of GB2134709B publication Critical patent/GB2134709B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07553—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/521—Structures or relative sizes of bond wires
    • H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/553—Materials of bond wires not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/555—Materials of bond wires of outermost layers of multilayered bond wires, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A semiconductor device, in which, in order to prevent both a wiring layer (81) including a bonding pad (6, 80) of aluminum and a bonding wire (10) from corroding, the aluminium material has formed on its surface an aluminum oxide film (90, 12, 13). In the semiconductor device disclosed, a first aluminum oxide film (90, 91) is formed on the surface of an upper aluminum wiring (80, 81) underlying a final passivation film (27), and a second aluminum oxide film (12,13) is formed on both an exposed surface of a bonding pad (80) and the surface of a bonding wire (10). In order to ensure the high quality of the second aluminum oxide film (12, 13), the materials of the bonding pad and the bonding wire are made to have an identical ionization tendency, or all leads are short-circuited when the oxidization for the second oxide film is conducted. In order that electrical connection to the bonding pad may not be broken during the oxidization of the second oxide film, moreover, the bonding pad is made to have a stacked construction of two aluminum layers (6, 80). <IMAGE>
GB08402099A 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof Expired GB2134709B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP56115080A JPS5817627A (en) 1981-07-24 1981-07-24 Semiconductor integrated circuit device and manufacture thereof
JP56115082A JPS5817629A (en) 1981-07-24 1981-07-24 Manufacture of semiconductor integrated circuit device
JP56115081A JPS5817628A (en) 1981-07-24 1981-07-24 Semiconductor integrated circuit device and manufacture thereof
JP56122994A JPS5825241A (en) 1981-08-07 1981-08-07 Manufacture of semiconductor i.c. device

Publications (3)

Publication Number Publication Date
GB8402099D0 GB8402099D0 (en) 1984-02-29
GB2134709A GB2134709A (en) 1984-08-15
GB2134709B true GB2134709B (en) 1985-07-31

Family

ID=27470225

Family Applications (3)

Application Number Title Priority Date Filing Date
GB08221354A Expired GB2105107B (en) 1981-07-24 1982-07-23 Semiconductor device and fabrication method thereof
GB08402099A Expired GB2134709B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof
GB08402057A Expired GB2135121B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB08221354A Expired GB2105107B (en) 1981-07-24 1982-07-23 Semiconductor device and fabrication method thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08402057A Expired GB2135121B (en) 1981-07-24 1984-01-26 Semiconductor device and fabrication method thereof

Country Status (6)

Country Link
DE (1) DE3227606A1 (en)
FR (1) FR2510307A1 (en)
GB (3) GB2105107B (en)
HK (3) HK45886A (en)
IT (1) IT1152455B (en)
MY (2) MY8600558A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4922852A (en) * 1986-10-30 1990-05-08 Nordson Corporation Apparatus for dispensing fluid materials
JP2598328B2 (en) * 1989-10-17 1997-04-09 三菱電機株式会社 Semiconductor device and manufacturing method thereof
DE19736090B4 (en) * 1997-08-20 2005-04-14 Daimlerchrysler Ag Protective layer device and method for producing a protective layer for a device
WO2000074131A1 (en) * 1999-05-31 2000-12-07 Infineon Technologies A.G. A method of assembling a semiconductor device package
GB0018643D0 (en) * 2000-07-31 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices
EP2092561B1 (en) 2006-11-13 2013-04-10 Nxp B.V. Bond pad structure and method for producing same
CN110911353A (en) * 2019-12-05 2020-03-24 上海华虹宏力半导体制造有限公司 Method of forming conductive interconnects
JP7305587B2 (en) 2020-03-17 2023-07-10 株式会社東芝 Semiconductor equipment and inspection equipment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1204619A (en) * 1915-04-23 1916-11-14 Enos C Verkler Garment-hanger.
US3741880A (en) * 1969-10-25 1973-06-26 Nippon Electric Co Method of forming electrical connections in a semiconductor integrated circuit
DE2243011C3 (en) * 1972-09-01 1982-04-01 Deutsche Itt Industries Gmbh, 7800 Freiburg Method for producing a thermocompression contact
DE2403149A1 (en) * 1974-01-23 1975-07-24 Siemens Ag Semiconductor device with protective silica-based film - including mixture or cpd. of silica and alumina
JPS5851425B2 (en) * 1975-08-22 1983-11-16 株式会社日立製作所 Hand tie souchi
JPS52117551A (en) * 1976-03-29 1977-10-03 Mitsubishi Electric Corp Semiconductor device
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
JPS5651843A (en) * 1979-10-04 1981-05-09 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
HK45886A (en) 1986-06-27
GB2135121A (en) 1984-08-22
GB8402057D0 (en) 1984-02-29
GB8402099D0 (en) 1984-02-29
GB2135121B (en) 1985-08-07
FR2510307B1 (en) 1984-11-30
GB2105107B (en) 1985-07-31
FR2510307A1 (en) 1983-01-28
IT1152455B (en) 1986-12-31
IT8222563A0 (en) 1982-07-23
HK46686A (en) 1986-06-27
GB2105107A (en) 1983-03-16
HK46786A (en) 1986-06-27
MY8600558A (en) 1986-12-31
GB2134709A (en) 1984-08-15
MY8700228A (en) 1987-12-31
DE3227606A1 (en) 1983-03-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940723