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GB2144151B - Method of selective area epitaxial growth - Google Patents
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GB2144151B - Method of selective area epitaxial growth - Google Patents

Method of selective area epitaxial growth

Info

Publication number
GB2144151B
GB2144151B GB08418799A GB8418799A GB2144151B GB 2144151 B GB2144151 B GB 2144151B GB 08418799 A GB08418799 A GB 08418799A GB 8418799 A GB8418799 A GB 8418799A GB 2144151 B GB2144151 B GB 2144151B
Authority
GB
United Kingdom
Prior art keywords
epitaxial growth
selective area
area epitaxial
selective
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08418799A
Other versions
GB2144151A (en
GB8418799D0 (en
Inventor
Won-Tien Tsang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of GB8418799D0 publication Critical patent/GB8418799D0/en
Publication of GB2144151A publication Critical patent/GB2144151A/en
Application granted granted Critical
Publication of GB2144151B publication Critical patent/GB2144151B/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H10D30/435—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels having multiple laterally adjacent 1D material channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/813—Quantum wire structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12178—Epitaxial growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB08418799A 1983-07-27 1984-07-24 Method of selective area epitaxial growth Expired GB2144151B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51775583A 1983-07-27 1983-07-27

Publications (3)

Publication Number Publication Date
GB8418799D0 GB8418799D0 (en) 1984-08-30
GB2144151A GB2144151A (en) 1985-02-27
GB2144151B true GB2144151B (en) 1986-09-17

Family

ID=24061098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08418799A Expired GB2144151B (en) 1983-07-27 1984-07-24 Method of selective area epitaxial growth

Country Status (3)

Country Link
JP (1) JPS6053012A (en)
FR (1) FR2550008B1 (en)
GB (1) GB2144151B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2155042B (en) * 1984-02-21 1987-12-31 Hughes Technology Pty Ltd Laser induced ion beam generator
GB8719794D0 (en) * 1987-08-21 1987-09-30 Scient Coatings Uk Ltd Depositing surface layers on substrates
JPH0717477B2 (en) * 1989-03-15 1995-03-01 シャープ株式会社 Epitaxial growth method of compound semiconductor
JPH0633231B2 (en) * 1990-01-12 1994-05-02 松下電器産業株式会社 Molecular beam epitaxial growth method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
US4385946A (en) * 1981-06-19 1983-05-31 Bell Telephone Laboratories, Incorporated Rapid alteration of ion implant dopant species to create regions of opposite conductivity

Also Published As

Publication number Publication date
FR2550008A1 (en) 1985-02-01
JPS6053012A (en) 1985-03-26
GB2144151A (en) 1985-02-27
GB8418799D0 (en) 1984-08-30
FR2550008B1 (en) 1987-04-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940724