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GB2255229A - Semiconductor cavity device with electric lead - Google Patents
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GB2255229A - Semiconductor cavity device with electric lead - Google Patents

Semiconductor cavity device with electric lead

Info

Publication number
GB2255229A
GB2255229A GB9212939A GB9212939A GB2255229A GB 2255229 A GB2255229 A GB 2255229A GB 9212939 A GB9212939 A GB 9212939A GB 9212939 A GB9212939 A GB 9212939A GB 2255229 A GB2255229 A GB 2255229A
Authority
GB
United Kingdom
Prior art keywords
cavity
semiconductor
electrode
insulating layer
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9212939A
Other versions
GB2255229B (en
GB9212939D0 (en
Inventor
Tony William James Rogers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BTG International Ltd
Original Assignee
British Technology Group Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB898929276A external-priority patent/GB8929276D0/en
Priority claimed from GB898929307A external-priority patent/GB8929307D0/en
Priority claimed from PCT/GB1990/002035 external-priority patent/WO1991010120A2/en
Application filed by British Technology Group Ltd filed Critical British Technology Group Ltd
Priority to GB9212939A priority Critical patent/GB2255229B/en
Publication of GB9212939D0 publication Critical patent/GB9212939D0/en
Publication of GB2255229A publication Critical patent/GB2255229A/en
Application granted granted Critical
Publication of GB2255229B publication Critical patent/GB2255229B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

The invention provides a method of making a semiconductor cavity device provided with an electrode within its cavity and an electric lead into the cavity and electrically continuous with the electrode therewithin, comprising depositing metal, in the shape of the lead and the electrode, on a non-conductive substrate, then providing an annular insulating layer in the shape of the boundary of the cavity on the substrate including where necessary on the metal of the lead, but not of the electrode, then (preferably in vacuo) placing on the insulating layer a semiconductor formed to define the remainder of the cavity, and applying a voltage between the substrate and the semiconductor whereby to promote electrostatic bonding between the insulating layer and the semiconductor.
GB9212939A 1989-12-28 1992-06-18 Semiconductor cavity device with electric lead Expired - Fee Related GB2255229B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9212939A GB2255229B (en) 1989-12-28 1992-06-18 Semiconductor cavity device with electric lead

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB898929276A GB8929276D0 (en) 1989-12-28 1989-12-28 Semiconductor cavity device with electric lead
GB898929307A GB8929307D0 (en) 1989-12-29 1989-12-29 Semiconductor cavity device with electric lead
PCT/GB1990/002035 WO1991010120A2 (en) 1989-12-28 1990-12-28 Semiconductor cavity device with electric lead
GB9212939A GB2255229B (en) 1989-12-28 1992-06-18 Semiconductor cavity device with electric lead

Publications (3)

Publication Number Publication Date
GB9212939D0 GB9212939D0 (en) 1992-08-26
GB2255229A true GB2255229A (en) 1992-10-28
GB2255229B GB2255229B (en) 1993-11-17

Family

ID=27264871

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9212939A Expired - Fee Related GB2255229B (en) 1989-12-28 1992-06-18 Semiconductor cavity device with electric lead

Country Status (1)

Country Link
GB (1) GB2255229B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0156757A2 (en) * 1984-03-12 1985-10-02 United Technologies Corporation Capacitive pressure sensor with low parasitic capacitance
EP0302654A2 (en) * 1987-08-06 1989-02-08 United Technologies Corporation Method of sealing an electrical feedthrough in a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0156757A2 (en) * 1984-03-12 1985-10-02 United Technologies Corporation Capacitive pressure sensor with low parasitic capacitance
EP0302654A2 (en) * 1987-08-06 1989-02-08 United Technologies Corporation Method of sealing an electrical feedthrough in a semiconductor device

Also Published As

Publication number Publication date
GB2255229B (en) 1993-11-17
GB9212939D0 (en) 1992-08-26

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GB2255229A (en) Semiconductor cavity device with electric lead

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941228