JP2005236174A - Developer application device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a developer coating apparatus capable of forming a resist pattern having a uniform line width and film thickness with a simple structure.
A developer discharge nozzle 1 has a long shape in a width direction perpendicular to a traveling direction, and a first developer discharge section 2 in which a plurality of developer discharge ports 4 are arranged in a line in the width direction. And a second developer discharge unit 3 in parallel with the first developer discharge unit 2 and having a plurality of developer discharge ports 5 arranged in a line in the width direction. The developer discharge port 4 of the first developer discharge unit 2 and the developer discharge port 5 of the second developer discharge unit 3 are provided at positions that do not overlap each other when viewed from the advancing direction. The developer discharge port 4 and the developer discharge port 5 are preferably arranged at equal intervals.
[Selection] Figure 1

Description

  The present invention relates to a developer coating apparatus, and more particularly to a developer coating apparatus that coats a developer on a substrate while traveling in a predetermined direction.

  In recent years, with the increase in the degree of integration of semiconductor devices, the dimensions of individual elements have been reduced, and the widths of wirings and gates constituting each element have also been reduced.

  The photolithography technology that supports this miniaturization includes a step of forming a resist film by applying a resist composition to the surface of a substrate to be processed, a resist pattern latent image by exposing a predetermined pattern by irradiating light. Forming a desired fine pattern by developing this, and then performing a process such as etching on the substrate to be processed using the fine pattern as a mask. included.

  Of the above steps, the resist development process is performed as follows.

  6A to 6C are conceptual diagrams illustrating a conventional development processing method. In FIG. 6A, a substrate 63 provided with a resist film 62 is placed on a rotatable substrate platform 61. Here, it is assumed that the resist film 62 has been subjected to the exposure and the subsequent heat treatment process. First, the developer application device 64 is moved in the direction of the arrow in the figure to apply the developer 65 onto the resist film 62. After a predetermined development time has elapsed, pure water 67 is supplied onto the resist film 62 from above the central portion of the substrate 61 by the pure water supply nozzle 66 while the substrate mounting table 61 is rotated (FIG. 6 ( b)). After replacing the developing solution 65 with pure water 67, the substrate mounting table 61 is rotated for a while to dry the substrate 63 (FIG. 6C). Through the above steps, a resist pattern 68 is formed.

  Next, with reference to FIGS. 7A to 7D, a method for applying a developer onto a resist film using a conventional developer application apparatus will be described. As shown in FIG. 7A, the developer application apparatus includes a developer discharge nozzle 71 having a width exceeding the diameter of the circular substrate 72. Then, the developer 73 is applied to the substrate 72 as the developer discharge nozzle 71 moves in the direction of the arrow.

  FIG. 7B is a side view of the developer discharge nozzle 71, and FIG. 7C is a front view thereof. As shown in these drawings, the developer discharge nozzle 71 has one developer discharge section 74 and has a structure in which the developer 73 is discharged from a discharge port 75 provided in the developer discharge section 74. A plurality of discharge ports 75 are provided, and each discharge port 75 is arranged in a line along the width direction of the developer discharge nozzle 71. For this reason, the developer 73 is applied onto the substrate 72 at a predetermined interval L ′.

  FIG. 7D corresponds to the top view of FIG. 7A and shows the state of the developer immediately after coating. For simplicity, the resist film is omitted. As shown in the figure, the initial developer 73 applied has a stripe shape on the resist film. After a predetermined time has elapsed, the developer 73 spreads over the entire resist film, but there is a difference in the time until the developer 73 is supplied depending on the position on the resist film. For this reason, there is a problem that the line width and film thickness of the resist pattern to be formed are non-uniform. That is, the development time is longer in the portion where the developer 73 is supplied first (region 76 in FIG. 7D), whereas the portion where the developer 73 is supplied later (FIG. 7D). In area 77) of d), the development time is relatively short. Accordingly, the resist pattern in region 76 has a smaller line width and film thickness than the resist pattern in region 77.

  FIG. 8 shows a line width distribution of a resist pattern formed by development processing using a conventional developer discharge nozzle. From the figure, it can be seen that the line widths are distributed in parallel with the direction of travel of the developer discharge nozzle (Y direction).

  In order to reduce the patterning property due to the difference in position on the resist film, the discharge ports are provided in two rows, and the developer discharged from the discharge ports arranged in the front and back with respect to the advancing direction of the developer discharge nozzle is closer to each other. A method of supplying a developing solution to the resist film in a matched manner has been proposed (for example, see Patent Document 1).

Japanese Patent Laid-Open No. 2003-77820

  However, in the above method, it is necessary to cause the two flows to strongly interfere with each other by discharging the developer so as to face each other. For this reason, there has been a problem that the structure of the developer discharge nozzle is complicated. Further, the above document does not discuss the difference in the developer supply speed in the width direction of the developer supply nozzle.

  The present invention has been made in view of such problems. That is, an object of the present invention is to provide a developer coating apparatus capable of forming a resist pattern having a uniform line width and film thickness with a simple structure.

  Other objects and advantages of the present invention will become apparent from the following description.

  The present invention is a developer application apparatus that applies a developer to a substrate while proceeding in a predetermined direction, and includes a developer discharge nozzle having a long shape in a width direction perpendicular to the advancing direction. The developer discharge nozzle includes a first developer discharge portion in which a plurality of developer discharge ports are arranged in a line in the width direction, and the plurality of developer discharge ports in parallel with the first developer discharge portion. And a second developer discharge section arranged in a line. The developer discharge port of the first developer discharge unit and the developer discharge port of the second developer discharge unit are provided at positions that do not overlap each other when viewed from the advancing direction.

In the present invention, the developer outlet of the first developer outlet and the developer outlet of the second developer outlet are preferably arranged at equal intervals. Furthermore, the width w ₁ of the developer discharge port of the first developer discharge unit, the width w ₂ of the developer discharge port of the second developer discharge unit, and the width of each developer discharge port in the first developer discharge unit between the spacing _{d 2} of each developer discharge port at intervals _{d 1} and the second developer discharge _unit, it is preferable that the relationship of _{w 1 = w 2 = d 1} = d 2 is satisfied.

  As described above, according to the present invention, the developer discharge nozzle includes a first developer discharge portion in which a plurality of developer discharge ports are arranged in a line in the width direction, and the first developer discharge portion in parallel. The plurality of developer discharge ports have a second developer discharge portion arranged in a line in the width direction. Since the developer discharge port of the first developer discharge unit and the developer discharge port of the second developer discharge unit are provided at positions where they do not overlap each other when viewed from the advancing direction, By making the discharge interval narrower than the liquid discharge nozzle, it is possible to suppress a difference in development time on the resist film. Therefore, a resist pattern having a uniform line width and film thickness can be formed with a simple structure.

  FIG. 1A is a perspective view of a developer discharge nozzle in the present invention. As shown in the figure, the developer discharge nozzle 1 has a shape that is long in the width direction. Here, the width direction corresponds to a direction perpendicular to the traveling direction of the developer coating apparatus. In the present embodiment, the traveling direction of the developer application apparatus coincides with the traveling direction of the developer discharge nozzle.

  Further, the developer discharge nozzle 1 includes a first developer discharge unit 2 and a second developer discharge unit 3 in parallel with the first developer discharge unit 2. Here, the first developer discharge section 2 is provided with a plurality of developer discharge ports 4, and each developer discharge port 4 is arranged in a line along the width direction of the developer discharge nozzle 1. Arranged. Similarly, the second developer discharge unit 3 is also provided with a plurality of developer discharge ports 5, and each developer discharge port 5 is arranged in a line along the width direction of the developer discharge nozzle 1. ing. Then, the developer discharge port 4 provided in the first developer discharge unit 2 and the developer discharge port 5 provided in the second developer discharge unit 3 are from the traveling direction of the developer discharge nozzle 1. They are provided at positions that do not overlap each other. In the present embodiment, it is preferable that the developer discharge port 4 and the developer discharge port 5 are arranged at equal intervals.

FIG. 1B is a partially enlarged view of the first developer discharge unit 2 and the second developer discharge unit 3 when FIG. 1A is viewed from below. As shown in the figure, between the developer width w ₁ of the discharge port _4, the developer width w ₂ of the discharge port _5, the distance d ₂ of the developer discharge opening 4 of the distance d ₁ and the developer discharge port 5 Preferably have a relationship of w ₁ = w ₂ = d ₁ = d ₂ . The width w ₁ and the width w ₂ are the lengths in the direction parallel to the width direction of the developer discharge nozzle 1. In this way, the developer can be supplied almost simultaneously at any position on the resist film. The values of w ₁ , w ₂ , d ₁ , and d ₂ can be set as appropriate, but can be set to about 2 mm, for example.

  Next, with reference to FIGS. 2A to 2D, an example of a method for applying a developer to a substrate by the developer applying apparatus of the present invention will be described. In addition to the developer discharge nozzle 6 shown in the figure, the developer application apparatus has a moving means (not shown) for moving the developer discharge nozzle 6 and a liquid feeding means (not shown) for sending the developer to the developer discharge nozzle 6. Not shown).

  As shown in FIG. 2A, the developer discharge nozzle 6 has a width exceeding the diameter of the circular substrate 7, and the developer discharge nozzle 6 moves in the direction of the arrow. Then, the developing solution 8 is applied over the entire substrate 7.

  FIG. 2B is a side view of the developer discharge nozzle 6 of FIG. The first developer discharge unit 9 and the second developer discharge unit 10 are arranged in parallel, and the developer 8 is discharged from the developer discharge ports 11 and 12 provided in each. Yes.

  FIG. 2C is a front view of the developer discharge nozzle 6 of FIG. The developing solution discharge port 11 provided in the first developing solution discharge unit 9 and the developing solution discharge port 12 provided in the second developing solution discharge unit 10 are the traveling directions of the developing solution discharge nozzle 6 (FIG. 2). They are provided at positions that do not overlap each other when viewed from (c) (perpendicular to the paper surface). Accordingly, the developing solutions 8a and 8b discharged from these discharge ports are discharged uniformly in the width direction of the developing solution discharge nozzle 6, and the discharge interval can be made narrower than the conventional developing solution discharge nozzle. .

  FIG. 2D corresponds to a partially enlarged view of FIG. 2A from the top, and shows the state of the developer immediately after coating. For simplicity, the resist film is omitted. According to the present invention, the developing solutions 8a and 8b discharged from the developing solution discharge nozzle 6 are supplied more uniformly to the resist film than before. Therefore, since the difference in development time on the resist film can be reduced, it is possible to easily form a resist pattern having a uniform line width and film thickness.

  Next, an example of a method for forming a resist pattern by the developer coating apparatus according to the present invention will be described with reference to FIGS. In these drawings, the same reference numerals indicate the same parts.

  First, a substrate 22 is mounted on a rotatable substrate mounting table 21, and a resist film 23 is formed thereon by a spin coating method (FIG. 3A).

The substrate 22 can be, for example, a semiconductor substrate on which a film to be processed is formed. A diffusion region, an element isolation region, or the like may be formed on the semiconductor substrate. The film to be processed can be an insulating film such as a SiO ₂ (silicon dioxide) film.

  The resist film 23 is, for example, a chemical amplification type that includes an alkali-insoluble polymer in which an acid labile group is introduced as a protective group into at least a part of functional groups of a base polymer that is soluble in an alkaline aqueous solution, and an acid generator. It can be a resist film.

Next, the resist film 23 is irradiated with exposure light 25 through a predetermined mask 24 (FIG. 3B). For example, ArF excimer laser light having a wavelength 193 nm, the _{F 2} excimer laser light or a wavelength 13nm wavelength 157nm and EUV light can be irradiated. This exposure is performed for the purpose of forming a predetermined latent image on the resist film 23. At this time, in the exposed portion 26, acid is generated from the acid generator contained in the resist film 23. However, in the unexposed portion 27, the acid generator is not exposed, so that no acid is generated.

  Next, heat treatment is performed on the exposed resist film 23. When heat treatment is performed, the alkali-insoluble polymer in the resist film 23 in the exposed portion 26 reacts with an acid to become an alkali-soluble polymer. That is, an acid labile group blocking an alkali-soluble functional group is thermally decomposed and eliminated by the catalytic action of an acid. As a result, an alkali-soluble polymer structure is formed in the exposed portion 26.

  After the heat treatment, the resist film 23 is developed.

  An alkaline aqueous solution can be used as the developer. As the alkaline aqueous solution, for example, an aqueous solution of tetramethylammonium hydroxide having a concentration of 2.38% can be used. In addition, as long as it is aqueous alkali solution which can be used as a developing solution, substances other than tetramethylammonium hydroxide may be contained.

  First, while the substrate mounting table 21 is stationary, the developer coating device 28 according to the present invention is moved in the direction of the arrow in the figure, and the developer 29 is supplied onto the resist film 23 (FIG. 3C). According to the present invention, the developer 29 can be supplied to the resist film 23 more uniformly than in the prior art.

  After the developing solution 29 is applied to the entire surface of the resist film 23, the substrate mounting table 21 is kept stationary until a predetermined developing time elapses (FIG. 3D).

  Next, pure water 31 is supplied from above the central portion of the substrate 22 by the pure water supply nozzle 30 while the substrate mounting table 21 is rotated (FIG. 3E). After the developing solution 29 is replaced with pure water 31, the substrate mounting table 21 is rotated at a high speed for a while to dry the substrate 22, and the developing process is completed (FIG. 3F).

  Through the above steps, a resist pattern 32 having a uniform line width and film thickness can be obtained. Thereafter, the desired pattern can be transferred to the substrate 22 by etching the substrate 22 using the resist pattern 32 as a mask.

  FIG. 4 is a plan view of a developing device using the developer coating apparatus according to the present invention. FIG. 5 is a side view of the developing device of FIG.

  In these drawings, the substrate 43 stored in the cassette 42 in the substrate storage unit 41 is transferred to the resist coating unit 45 by the first substrate transfer means 44. Then, after the resist is applied by the resist application unit 45, the resist is applied to the heat treatment unit 47 by the second substrate transfer means 46. After the heat treatment is finished, the third substrate transport unit 48 transports the exposure unit 49 to the exposure unit 49 and exposes it, and then the third substrate transport unit 48 transports the heat treatment unit 47 again. After the heat treatment, the third substrate transport means 48 transports the heat treatment to the development processing unit 50. The development processing unit 50 is provided with a developer application device (not shown) of the present invention. The substrate after the development processing is transferred again to the substrate storage unit 41 by the second substrate transfer unit 46 and the first substrate transfer unit 41. In FIG. 4, each arrow indicates the moving direction of the first transport unit 44, the second transport unit 46, and the third transport unit 48.

  In the present embodiment, an example in which the developer discharge nozzle has two developer discharge portions has been described, but the present invention is not limited to this. The developer discharge nozzle may have three or more developer discharge sections. In this case, each developer discharge portion has a structure in which a plurality of developer discharge ports are arranged in a line in the width direction, and the developer discharge ports in each developer discharge portion are viewed from the direction of travel of the developer discharge nozzle. It is assumed that they are provided at positions that do not overlap each other. The larger the number of developer discharge sections, the more uniformly the developer can be applied on the substrate.

(A) is the perspective view of the developing solution discharge nozzle in this Embodiment, (b) is the partially expanded view which looked at the developing solution discharge nozzle of (a) from the downward direction. (A) is explanatory drawing of the developing solution application | coating method in this Embodiment, (b) is a side view of the developing solution discharge nozzle of (a), (c) is a front view of the developing solution discharge nozzle of (a), ( d) is a partially enlarged view of (a) as viewed from above. (A)-(f) is explanatory drawing of the resist pattern formation method by this Embodiment. It is a top view of the developing device by this Embodiment. It is sectional drawing of the image development apparatus of FIG. (A)-(c) is explanatory drawing of the conventional image development method. (A) is explanatory drawing of the conventional developing solution application | coating method, (b) is a side view of the developing solution discharge nozzle of (a), (c) is a front view of the developing solution discharge nozzle of (a), (d) is It is the partially expanded view which looked at (a) from upper direction. It is a figure which shows the line | wire width distribution of the resist pattern formed by the conventional image development processing.

Explanation of symbols

1,6 Developer supply nozzles 2,9 First developer discharge part 3,10 Second developer discharge part 4,5,11,12 Developer discharge port 7,22,43 Substrate 8,29 Developer 21 Substrate mounting table 23 Resist film 24 Mask 25 Exposure light 26 Exposure unit 27 Unexposed unit 28 Developer application device 30 Pure water supply nozzle 31 Pure water 32 Resist pattern 41 Substrate storage unit 42 Cassette 44 First substrate transport means 45 Resist application Unit 46 Second substrate transport unit 47 Heat processing unit 48 Third substrate transport unit 49 Exposure unit 50 Development processing unit

Claims (3)

A developer application device for applying a developer to a substrate while proceeding in a predetermined direction,
A developer discharge nozzle having a long shape in the width direction perpendicular to the traveling direction;
The developer discharge nozzle includes a first developer discharge portion in which a plurality of developer discharge ports are arranged in a line in the width direction;
A second developer discharge portion arranged in parallel with the first developer discharge portion and having a plurality of developer discharge ports arranged in a line in the width direction;
The developer discharge port of the first developer discharge unit and the developer discharge port of the second developer discharge unit are provided at positions that do not overlap each other when viewed from the traveling direction. A developing solution coating apparatus.   2. The developer application apparatus according to claim 1, wherein the developer discharge port of the first developer discharge unit and the developer discharge port of the second developer discharge unit are arranged at equal intervals. The width w _{1 of} the developer discharge port of the first developer discharge portion, the width w ₂ of the developer discharge port of the _second developer discharge portion, and each developer in the first developer discharge portion Between the interval d ₁ between the discharge ports and the interval d ₂ between the developer discharge ports in the second developer discharge unit, the equation (1)
w ₁ = w ₂ = d ₁ = d ₂ (1)
The developer application apparatus according to claim 2, wherein:

Images