JP2012199388A - Sensor module and method for manufacturing sensor module - Google Patents

Abstract

Provided is a sensor module manufacturing method that can be miniaturized and does not require wire bonding between surfaces orthogonal to each other.
A step of forming a resin layer on a first surface of a semiconductor substrate having an integrated circuit, a first electrode, and a second electrode, and a first electrode on the second surface of the resin layer. A step of forming a first wiring 31 to be connected and a second wiring 32 to be connected to the second electrode 16, and a step of electrically connecting the first wiring 31 and the first vibrator 60 above the resin layer 20. The step of dividing the semiconductor substrate to form the first semiconductor substrate 11 and the second semiconductor substrate 12, and the resin layer 20 between the first semiconductor substrate 11 and the second semiconductor substrate 12 are bent to form the first structure 70. A step of preparing the wiring substrate 90 having the third wiring 91 on the fourth surface, a step of mounting the first structure 70 on the fourth surface of the wiring substrate 90, the second wiring 32 and the second Connecting the three wirings 91 by wire bonding.
[Selection] Figure 3

Description

  The present invention relates to a sensor module and a method for manufacturing the sensor module.

  A sensor module (motion sensor) capable of detecting physical quantities such as acceleration and rotational angular velocity, and as a sensor element, for example, a gyro sensor (piezoelectric oscillator) in which a so-called double T-type gyro sensor crystal oscillator is accommodated in a package Is known (Patent Document 1).

  In recent years, the sensor element is intended to detect a physical quantity in a horizontal direction with respect to the installation surface of the support substrate on which the sensor module is installed, and the angle formed by the installation surface and the main surface of the sensor element is a right angle. For the purpose of detecting a physical quantity in a multi-axis direction with a sensor module in which a substrate mounted with is installed vertically with respect to the installation surface, a plurality of sensor elements are provided in a single module, so that multiple axes ( Development of sensor modules that detect physical quantities in multiple axes) is underway.

  For example, when a gyro sensor having a structure disclosed in Patent Document 1 is used as the sensor module, each sensor element is individually accommodated in a package, so that the total thickness of the sensor module increases, Miniaturization cannot be achieved. Therefore, in order to meet the demands for miniaturization of devices, the substrates on which sensor elements are mounted are placed in a common package so that the main surfaces of the sensor elements are orthogonal to each other, and the substrates are wire bonded together. It is conceivable to make an electrical connection. However, in such a case, since it is necessary to perform wire bonding between surfaces orthogonal to each other, it is difficult to connect the wires reliably and stably, and the electrical reliability of the sensor module is reduced. May be reduced.

JP 2005-292079 A

  The present invention has been made in view of the above problems, and according to some aspects of the present invention, it is possible to reduce the size, and it is not necessary to perform wire bonding between surfaces intersecting each other. It is possible to provide a sensor module manufacturing method and a sensor module that can be miniaturized and has high electrical reliability.

  (1) A method for manufacturing a sensor module according to this embodiment includes a first integrated circuit, and a first electrode and a second electrode that are located on a first surface and electrically connected to the first integrated circuit. A step of forming a resin layer above the first surface of the semiconductor substrate, and a connection to the first electrode on a second surface of the resin layer opposite to the first surface side. Forming a first wiring and a second wiring connected to the second electrode, and a third electrode located on the third surface of the first wiring and the first vibrator above the resin layer Electrically connecting to the semiconductor substrate, dividing the semiconductor substrate without dividing the resin layer, forming a first semiconductor substrate and a second semiconductor substrate, and the first semiconductor substrate and the Bending the resin layer in a portion that overlaps the region between the second semiconductor substrates to form the first structure A step of preparing a wiring board having a third wiring on the fourth surface, and a surface of the first structure opposite to the first surface of the second semiconductor substrate as a connection surface, A step of mounting the first structure on the fourth surface of the wiring board; and a step of connecting the second wiring and the third wiring by wire bonding. On the first surface, the first integrated circuit, the first electrode, the first wiring, the second electrode, and a part of the second wiring are located, and the second semiconductor substrate is formed on the first surface. A portion of the second wiring extending from the first semiconductor substrate side is located on the first surface.

  According to this embodiment, the sensor module can detect a physical quantity in the horizontal direction with respect to the installation surface or the reference surface of the sensor module, and can be downsized, and wire bonding is performed between surfaces intersecting each other. A method for manufacturing a sensor module that is not necessary can be provided.

  In the description of the present embodiment, the word “above” is formed, for example, “above” “specific” (hereinafter “A”), and other specific (hereinafter “B”). And so on. In the description according to the present invention, in the case of this example, the case where B is directly formed on A and the case where B is formed on A via another are included. , The word “above” is used. Similarly, the term “under” includes a case where B is directly formed under A and a case where B is formed under A via another.

  (2) In the method for manufacturing a sensor module according to the present embodiment, the step of forming the first structure includes the third surface of the first vibrator and the fourth surface of the wiring board. The resin layer may be bent so that the angle is a right angle.

  (3) The method for manufacturing a sensor module according to the present embodiment further includes a step of forming at least two of the first structures, and before the step of mounting the first structures on the wiring board, Forming the second structure in which the two first structures are arranged so that the angle formed by the third surfaces of the first vibrators is a right angle. Further, in the step of mounting on the wiring board, the second structure may be mounted on the fourth surface of the wiring board instead of the first structure.

  According to this, the sensor module can detect physical quantities in two directions that are horizontal with respect to the installation surface or the reference surface of the sensor module and are orthogonal to each other, and can be downsized and orthogonal to each other. It is possible to provide a method for manufacturing a sensor module that does not require wire bonding between surfaces.

  (4) In the method for manufacturing a sensor module according to the present embodiment, the step of forming the second structure includes a step of forming the second structure on the side opposite to the first surface of the first semiconductor substrate of the two first structures. A step of fixing the two first structures to the adhesive sheet by attaching an adhesive sheet to the surface of 5, and the two first structures to each of the third vibrators of the first vibrator. And bending the adhesive sheet so that the angle formed by the surface becomes a right angle.

  According to this, the manufacturing method which can manufacture more simply the sensor module which can detect the physical quantity of 2 directions which are horizontal with respect to the installation surface or reference plane of a sensor module and orthogonal to each other. Can be provided.

  (5) In the method for manufacturing a sensor module according to the present embodiment, the semiconductor substrate is a semiconductor wafer having a plurality of chip regions, and the first integrated circuit is formed in the chip regions, and the second structure body May be formed from two adjacent chip regions among the plurality of chip regions of the semiconductor wafer.

  According to this, the manufacturing method which can manufacture more simply the sensor module which can detect the physical quantity of 2 directions which are horizontal with respect to the installation surface or reference plane of a sensor module and orthogonal to each other. Can be provided.

  (6) In the method for manufacturing a sensor module according to this embodiment, a step of mounting a support substrate on the fourth surface of the wiring board before the step of mounting the first structure on the wiring board is further performed. And in the step of mounting the first structure on the wiring board, the first semiconductor substrate of the first structure has a fifth surface that is continuous with the first surface and the fourth surface. May be mounted on the support substrate with the connection surface as the connection surface.

  (7) In the method for manufacturing a sensor module according to this embodiment, the support substrate is a third semiconductor substrate, and the third semiconductor substrate is electrically connected to the second integrated circuit and the second integrated circuit. The angle formed by the main surface of the second vibrator and the third surface of the first vibrator of the second structure may be a right angle.

  According to this, the sensor module is capable of detecting physical quantities in two directions that are horizontal with respect to the installation surface or the reference surface of the sensor module and perpendicular to the installation surface. Therefore, it is possible to provide a method for manufacturing a sensor module that can be reduced in size and does not require wire bonding between surfaces orthogonal to each other.

  (8) In the method of manufacturing a sensor module according to the present embodiment, the step of forming the resin layer includes the step of bending the first portion of the resin layer that is bent in the step of forming the first structure by bending the resin layer. A step of forming the film so as to be thicker than the film thickness of the second portion of the resin layer that is not bent may be included.

  According to this, the manufacturing method of the sensor module which can perform the division | segmentation process of a semiconductor substrate more stably, and can improve the intensity | strength of the connection part of a 1st semiconductor substrate and a 2nd semiconductor substrate is provided. can do.

  (9) A sensor module according to the present embodiment includes a first semiconductor circuit having a first integrated circuit, and a first electrode and a second electrode that are located on a first surface and electrically connected to the integrated circuit; A second semiconductor substrate having a second surface disposed so that an angle formed with the first surface is a right angle, and a first resin positioned above the first surface of the first semiconductor substrate A resin layer comprising: a layer; a second resin layer located above the second surface of the second semiconductor substrate; and a third resin layer continuing the first resin layer and the second resin layer. And a first wiring that is located on a third surface opposite to the first surface side surface of the first resin layer and is connected to the first electrode, and the first resin layer Above the third surface, a first vibrator electrically connected to the first wiring, a first portion connected to the second electrode, and a front The second portion is located so as to extend from the first portion over the third resin layer to the fourth surface on the side opposite to the second surface side of the second resin layer. A first structure including a second wiring, and a fifth surface to which a surface of the first structure opposite to the second surface of the second semiconductor substrate is connected. A wiring board having a third wiring located on the fifth surface; a conductive wire connecting the second wiring of the second wiring; and the third wiring. An angle formed between the main surface of the first vibrator and the fifth surface of the wiring board is a right angle.

  According to this embodiment, the sensor module can detect a physical quantity in the horizontal direction with respect to the installation surface or the reference surface of the sensor module, and can be downsized, and the wire between the surfaces orthogonal to each other. It is possible to provide a sensor module with improved electrical connection reliability because it is not necessary to perform bonding.

  (10) In the sensor module according to the present embodiment, two adjacent first structures are positioned on the fifth surface of the wiring board, and the two first structures are respectively the first structures. You may arrange | position so that the angle which the main surfaces of a vibrator | oscillator form may become a right angle.

  According to this, the sensor module can detect physical quantities in two directions that are horizontal with respect to the installation surface or the reference surface of the sensor module and are orthogonal to each other, and can be downsized and orthogonal to each other. Since it is not necessary to perform wire bonding between surfaces, a sensor module with improved electrical connection reliability can be provided.

  (11) In the sensor module according to the present embodiment, a support substrate is located on the fifth surface of the wiring substrate, and the first semiconductor substrate of the first structure includes the first surface, You may be located on the said support substrate by making the 7th surface which continues the 6th surface on the opposite side to a 1st surface into a connection surface.

  (12) In the sensor module according to this embodiment, the support substrate is a third semiconductor substrate, and the third semiconductor substrate is a second integrated circuit and a second integrated circuit electrically connected to the second integrated circuit. The angle formed by the main surface of the second vibrator and the main surface of the first vibrator of the first structure may be a right angle.

  According to this, the sensor module can detect physical quantities in two directions that are horizontal to the installation surface or the reference surface of the sensor module and perpendicular to each other, and in a direction perpendicular to the installation surface. Thus, it is possible to provide a sensor module that can be miniaturized and that has improved electrical connection reliability because it is not necessary to perform wire bonding between surfaces orthogonal to each other.

The figure which shows typically the sensor module which concerns on 1st Embodiment. The figure which shows typically the principal part of the sensor module which concerns on 1st Embodiment. The figure which shows typically the principal part of the sensor module which concerns on 1st Embodiment. The figure which shows typically the vibrator | oscillator of the sensor module which concerns on 1st Embodiment. The figure explaining operation | movement of the vibrator | oscillator of the sensor module which concerns on 1st Embodiment. The flowchart of the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure explaining the modification of the manufacturing method of the sensor module which concerns on 1st Embodiment. The figure which shows typically the sensor module which concerns on 2nd Embodiment. The flowchart of the manufacturing method of the sensor module which concerns on 2nd Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 2nd Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 2nd Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 2nd Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 2nd Embodiment. The figure explaining the manufacturing method of the sensor module which concerns on 2nd Embodiment.

  Preferred embodiments of the present invention will be described below with reference to the drawings.

1. 1. First Embodiment 1.1 Sensor Module First, a sensor module 100 according to a first embodiment will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view schematically showing a main part of the sensor module 100. FIG. 2 is a perspective view schematically showing only the first structure 70, the support substrate 80, and the wiring substrate 90 that are the main parts of the sensor module 100. 3 is a cross-sectional view schematically showing only the first structure 70, the support substrate 80, and the wiring substrate 90, and corresponds to the cross-sectional view taken along the line III-III in FIG. 1 to 3 are partly omitted and simplified for convenience.

  As shown in FIG. 1, the sensor module 100 includes a package 1, a lid 2, a bonding member 3, a first structure 70 (sensor device) that is housed in the package 1 and includes a vibrator 60. 70), a support substrate 80, and a wiring substrate 90.

In the following description, as shown in FIGS. 1 and 2, the space in which the sensor module 100 (200) is installed is referred to as an X ₀ -Y ₀ -Z ₀ space. In other words, mounting surface of the sensor module 100 (200) or the reference surface determining the sensing direction of the sensor module 100 _(200), and X 0 -Y ₀ plane.

As shown in FIG. 1, the package 1 can accommodate the first structure 70, the support substrate 80, and the wiring substrate 90 in the opening 1 b. The material of the package 1 is ceramics, for example. The package 1 has a mounting surface 1a in the opening 1b. On the mounting surface 1a, the wiring substrate 90 is mounted on which the first structure 70 and the support substrate 80 are mounted upward (+ Z ₀ axis direction). Mounting surface 1a is an X ₀ -Y ₀ plane parallel to the flat surface constitutes the bottom surface of the opening 1b.

  As shown in FIG. 1, the package 1 includes a plurality of external terminals 4 provided on the outer surface side and a plurality of internal electrodes 5 provided on the inner surface side. The external terminal 4 is used when mounted on an external member. As shown in FIG. 1, the internal electrode 5 is provided on the mounting surface 1 a and is used when electrically connected to the wiring board 90. Here, the internal electrode 5 is connected to the external terminal 4 by an internal wiring (not shown).

As shown in FIG. 1, the wiring substrate 90 may be fixed to the internal electrode 5 via a bonding member 95 having conductivity, for example. Thereby, the external terminal 4 and the wiring board 90 are electrically connected to each other. The wiring substrate 90 has a main surface 90a (surface having the widest area) on which the first structure 70 and the support substrate 80 are mounted. The wiring board 90 is fixed so that the main surface 90a is substantially parallel to the mounting surface 1a. Therefore, the main surface 90a of the wiring board 90 _may be X 0 -Y ₀ plane (installation surface or reference surface) and is substantially parallel flat surfaces.

  As illustrated in FIG. 3, the wiring substrate 90 includes connection terminals 91 (third wirings 91). The connection terminal 91 is located on the main surface 90 a of the wiring board 90. The connection terminal 91 is electrically connected to the bonding member 95 by an internal wiring (not shown). As a result, the connection terminal 91 is electrically connected to the external terminal 4.

  The material of the wiring board 90 is not specifically limited, For example, it employ | adoptes suitably from a glass substrate, a plastic substrate, a ceramic substrate etc., for example.

As shown in FIGS. 1 and 2, the support substrate 80 is mounted on the main surface 90 a of the wiring substrate 90. As shown in FIGS. 1 and 2, the support substrate 80 has a main surface 80 a that is a surface opposite to the surface on the wiring substrate 90 side. Thus, the major surface 80a of the supporting substrate 80 _may be X 0 -Y ₀ plane (installation surface or reference surface) and is substantially parallel flat surfaces.

  As shown in FIG. 3, the peripheral portion of the support substrate 80 may fill a gap between the first semiconductor substrate 11 of the first structure 70 described later and the main surface 90 a of the wiring substrate 90. This is a member (substrate) that can be formed. The material of the support substrate 90 is not particularly limited, and can be formed from, for example, a semiconductor substrate, a glass substrate, a resin substrate, or the like.

  As shown in FIG. 1, the lid 2 is joined to the upper surface 1 c of the package 1 via the joining member 3. The lid 2 may be welded, for example, by seam welding. The material of the lid 2 is, for example, a metal such as Kovar (an alloy of iron, nickel and cobalt).

  The bonding member 3 is formed on the upper surface 1c (the surface on the + Z direction side) located around the opening 1b of the package 1. As shown in FIG. 1, the joining member 3 is formed so as to surround the opening 1b. The material of the bonding member 3 is, for example, a low melting glass or a metal (shim ring) such as an alloy of gold and germanium.

  The package 1 has a through hole (not shown). Through the through hole, the inside of the cavity that is a space defined by the package 1 and the lid 2 can be deaerated. After the lid 2 is joined, the inside of the cavity can be evacuated, more preferably evacuated, by degassing from the through hole and closing the through hole.

  As shown in FIGS. 1 to 3, a first structure 70 that is a sensor device and a support substrate 80 are mounted on the main surface 90 a of the wiring substrate 90. Here, the structure including the wiring substrate 90 and the support substrate 80 is referred to as a second structure 170.

  As shown in FIGS. 2 and 3, the first structure 70 is formed above the first semiconductor substrate 11 having the first electrode 14 and the second electrode 15, the second semiconductor substrate 12, and the first semiconductor substrate 11. A first resin layer that is positioned; a second resin layer that is positioned above the second semiconductor substrate; and a third resin layer that is continuous with the first resin layer and the second resin layer. A first wiring 31 located on the resin layer 20, the first resin layer 21 and connected to the first electrode 14, and a first electrically connected to the first wiring 31 above the first resin layer 21. The vibrator 60, the first portion 32 a connected to the second electrode 15, and the first portion 32 a are positioned so as to extend to the second resin layer 21 through the third resin layer 23. And a second wiring 32 having a second portion 32b.

  As shown in FIGS. 1 to 3, the first semiconductor substrate 11 includes a first integrated circuit 18, a first electrode 14 and a second electrode 15 that are located on the active surface 11 a and are electrically connected to the integrated circuit 18. Have. The first semiconductor substrate 11 has two main surfaces (surfaces having the widest area). One main surface is an active surface 11a on which the integrated circuit 18 is formed and the vibrator 60 and the like are provided above, and the other is an inactive surface 11b on which no integrated circuit is formed. Here, a surface that continues the active surface 11a and the inactive surface 11b is referred to as a side surface 11c.

  The 1st semiconductor substrate 11 consists of a well-known semiconductor substrate, for example, is a silicon substrate. The configuration of the integrated circuit 18 provided on the active surface 11a is not particularly limited, but may include, for example, an active element such as a transistor or a passive element such as a resistor, a coil, or a capacitor. The integrated circuit 18 is electrically connected to the first vibrator 60. The integrated circuit 18 can include a drive circuit for driving and vibrating the first vibrator 60 and a detection circuit for detecting a detected vibration generated in the first vibrator 60 when an angular velocity is applied.

As shown in FIGS. 1 and 3, the first semiconductor substrate 11 is positioned on the support substrate 80 with the side surface 11c as a connection surface. Thus, the active surface 11a and the non-active surface 11b of the first semiconductor substrate 11 _may be with respect to X 0 -Y ₀ plane (installation surface or reference plane), a plane orthogonal to.

At this time, as shown in FIG. 2, a direction in which the side surface 11c is a mounting surface extends to the X ₁ axis direction, and a direction sides 11c not installation surface extending Y ₁ axially. _Further, the direction perpendicular to the _{Z 1} axial direction X 1 -Y ₁ plane substantially parallel to the active surface 11a and the non-active surface 11b. Here, as shown in FIG. 2, _{X 1} axial direction _{is X 1} axis direction in the X _{0 -Y} 0 -Z 0 space, _{Y 1} axis direction is _{Z 0} axis direction.

  As shown in FIG. 3, the first semiconductor substrate 11 includes a first electrode 14 and a second electrode 15 that are located on the active surface 11 a and are electrically connected to the integrated circuit 18. As shown in FIG. 3, the first electrode 14 is connected to the first wiring 31, and the second electrode 15 is connected to the second wiring 32.

  The material of the 1st electrode 14 and the 2nd electrode 15 is not specifically limited as long as it has electroconductivity. For example, the first electrode 14 and the second electrode 15 may be formed of a metal such as aluminum (Al) or copper (Cu). The first electrode 14 and the second electrode 15 may be a single conductive layer, or a barrier layer formed of a metal such as titanium (Ti) or titanium tungsten (TiW) that prevents metal diffusion such as aluminum. It may be a laminate of a plurality of conductive layers.

  As shown in FIG. 3, the first insulating layer 16 is located on the active surface 11a. The first insulating layer 16 may be a passivation film. On the first surface 11, the insulating layer 16 is formed so as to expose at least a part of the first electrode 14 and the second electrode 15. That is, the insulating layer 16 has openings 16 a located on the first electrode 14 and the second electrode 15, respectively.

The material of the first insulating layer 16 is not particularly limited as long as it has electrical insulation. For example, the first insulating layer 16 may be an inorganic insulating layer such as SiO ₂ or SiN. Alternatively, the first insulating layer 16 may be an organic insulating layer such as a polyimide resin.

  As shown in FIG. 3, the first resin layer 21 (resin layer 20) is located above the active surface 11a (on the first insulating layer 16). As shown in FIG. 3, the first resin layer 21 is provided so as to avoid at least a part of the first electrode 14 and the second electrode 15, and is opposite to the surface on the active surface 11a (first insulating layer 16) side. Has an upper surface 21a.

  The first resin layer 21 is formed from a resin having a stress relaxation function. The first resin layer 21 may be formed of, for example, polyimide resin, silicone-modified polyimide resin, epoxy resin, silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO), or the like. .

  As shown in FIG. 3, the first wiring 31 is located above the active surface 11 a (first insulating layer 16) and on the upper surface 21 a of the first resin layer 21, and the first wiring 31 is a first electrode. 14 is connected. The first wiring 31 is a rearrangement wiring and has a desired wiring pattern. Specifically, as shown in FIG. 3, the first wiring 31 is a portion formed on the first resin layer 21, and includes a land portion provided with an external connection terminal 50 described later, and a land portion. And a line portion extending from the first electrode 14 to the first electrode 14.

  The structure and material of the first wiring 31 are not particularly limited as long as it has conductivity, and may be a single conductive layer or a laminate of a plurality of conductive layers. The first wiring 31 may be a single-layer body including any one of copper (Cu), titanium (Ti), titanium tungsten (TiW), and chromium (Cr), for example. Alternatively, the first wiring 31 may be a conductive layer including at least one of copper (Cu), titanium (Ti), titanium tungsten (TiW), and chromium (Cr), and one of gold (Au) and nickel (Ni). It may be a laminate of conductive layers including one (not shown).

  As shown in FIG. 3, the second wiring 32 is located above the active surface 11a (first insulating layer 16). The second wiring 32 is a rearrangement wiring and has a desired wiring pattern. Specifically, the second wiring 32 is connected to the second electrode 15 from the first portion 32a and the first portion 32a via a third resin layer 23 described later, and is described later. 2 and a second portion 32b positioned so as to extend above the resin layer 22. The structure and material of the second wiring 32 are not particularly limited as long as they have conductivity, and may be the same as the first wiring, for example. Here, a wiring pattern composed of the wiring pattern of the first wiring 31 and the wiring pattern of the second wiring 32 may be referred to as a wiring pattern 30.

  As shown in FIG. 3, the first vibrator 60 is mounted on the active surface 11 a side of the first semiconductor substrate 11. Specifically, it is electrically connected to the first wiring 31 above the upper surface 21 a of the first resin layer 21. According to this, since the first resin layer 21 can relieve external impact and stress on the first vibrator 60, the reliability of the sensor module 100 can be improved.

  As shown in FIG. 3, the first vibrator 60 has two main surfaces. One main surface 60b is a surface on the first semiconductor substrate 11 side, and an extraction electrode 67 is provided. The other main surface 60a is a surface opposite to the main surface 60b. Here, as shown in FIG. 3, the first vibrator 60 is arranged such that an angle θ <b> 1 formed by the main surface 60 a of the first vibrator 60 and the main surface 90 a of the wiring substrate 90 is a right angle. . Note that the right angle is preferably 90 °, but may include an error of several degrees. Here, the first vibrator 60 may be arranged such that its main surface 60a is substantially parallel to the active surface 11a.

  The method of electrically connecting the first vibrator 60 to the first wiring 31 is not particularly limited. For example, the first wiring 31 on the first resin layer 21 may be electrically connected via the external connection terminal 50. Specifically, the first vibrator 60 is connected to the first semiconductor substrate by connecting the lead electrode 67 which is a connection electrode drawn from the detection electrode and the drive electrode of the first vibrator 60 and the external connection terminal 50. 11 may be electrically and mechanically connected (may be mounted).

  The configuration and material of the external connection terminal 50 are not particularly limited as long as they have conductivity and can be bonded and fixed to the first vibrator 60. For example, as shown in FIG. 3, the external connection terminal 50 includes a stud bump 50a formed on the first wiring 31, a stud bump 50a, and a solder ball 50b made of a brazing material. Also good.

  Further, as shown in FIG. 3, a resist layer 40 may be formed above the active surface 11a (first insulating layer 16). The resist layer 40 covers at least a part of the first wiring 31. The resist layer 40 has an opening at a portion where the external connection terminal 50 is formed on the first wiring 31. By covering the first wiring 31 with the resist layer 40, oxidation and corrosion of the first wiring 31 can be prevented, and an electrical failure can be prevented.

  The material of the resist layer 40 is not particularly limited as long as it has insulating properties and a part of the first wiring 31 can be sealed. For example, the resist layer 40 may be a known resin. For example, the resist layer 40 may be a known solder resist. Specifically, the resist layer 40 is a resin such as a polyimide resin, a silicone-modified polyimide resin, an epoxy resin, a silicone-modified epoxy resin, benzocyclobutene (BCB), polybenzoxazole (PBO), or a phenol resin. It may be formed.

  Next, an example of the configuration and operation of the first vibrator 60 in the present embodiment will be described below with reference to the drawings.

  FIG. 4 is a plan view for explaining the first vibrator 60. FIGS. 5A and 5B are plan views for explaining the operation of the first vibrator 60.

  As shown in FIG. 3, the first vibrator 60 is supported above the first semiconductor substrate 11 by external connection terminals 50. The material of the first vibrator 60 is, for example, a piezoelectric material such as quartz, lithium tantalate, or lithium niobate. The sensor module 100 having the first vibrator 60 is a sensor that detects the physical quantity by utilizing the change in the frequency of the first vibrator 60 according to the physical quantity. More specifically, the sensor module 100 is a gyro sensor that detects stress generated by acceleration, Coriolis force generated by angular velocity, and the like. Examples of the first vibrator (gyroscope) 60 used in such a gyro sensor include a so-called double T vibrator, tuning fork vibrator, AT vibrator, walk vibrator, and the like. . Hereinafter, the first vibrator 60 will be described as a so-called double T-type gyroscope.

  As shown in FIG. 4, the first vibrator 60 can include a base body 62 and a vibrating arm extending from the base body 62. A plurality of vibration arms are provided, and can be distinguished into a detection vibration arm 64 and a drive vibration arm 66.

The base 62 has a base 61 and a connecting arm 63. The base 61 can be connected to the external connection terminal 50. Coupling arms 63 are provided a pair, on both sides along the base 61 to the _{Y 1} axis (+ _{Y 1} toward the direction and -Y ₁ direction) extends.

Detecting vibrator arm 64 is provided a pair, on both sides along the X ₁ axis from the base 61 (+ X towards the _one direction and the -X ₁ direction) extends. A detection electrode (not shown) is formed on the surface of the detection vibrating arm 64. The distal end portions 64 a and 64 b of the detection vibrating arm 64 can be shaped wider than the other portions of the detection vibrating arm 64. The sensitivity of detecting the angular velocity can be improved by the tip portions 64a and 64b. The detection vibrating arm 64 constitutes a detection vibration system that detects angular velocity.

Driving vibration arms 66 along the X ₁ axis from each of the connecting arm 63 of a pair on both sides (+ X towards the _one direction and the -X ₁ direction) extends. A drive electrode (not shown) is formed on the surface of the drive vibrating arm 66. The distal end portions 66 a and 66 b of the drive vibrating arm 66 can be shaped wider than the other portions of the drive vibrating arm 66. Angular velocity detection sensitivity can be improved by the tip portions 66a and 66b. The connecting arm 63 and the driving vibrating arm 66 constitute a driving vibration system that drives the first vibrator 60.

As shown in FIG. 5A, in the first vibrator 60, the driving vibration arm 66 performs bending vibration in the direction indicated by the arrow A in a state where the angular velocity is not applied. X In this case, + a pair of vibrating arms for driving 66c located _{Y 1} direction, and the driving vibration arms 66d of pair located -Y ₁ direction side, passing through the center of gravity G of the first oscillator 60 _Since a line-symmetric vibration is performed with respect to a line (not shown) extending in _one direction, the base 61, the connecting arm 63, and the detection vibrating arm 64 hardly vibrate.

While performing the driving vibration, the angular velocity ω around the Z ₁ axis to the first vibrator 60 is applied, it performs a vibration as shown in FIG. 5 (B). That is, the Coriolis force in the direction of arrow B acts on the driving vibrating arm 66 and the connecting arm 63 constituting the driving vibration system, and new vibration is excited. This vibration in the direction of arrow B is a vibration in the circumferential direction with respect to the center of gravity G. At the same time, the detection vibration arm 66 is excited in the direction indicated by the arrow C in response to the vibration indicated by the arrow B. Then, a detection electrode formed on the vibration arm for detection 64 detects the distortion of the piezoelectric material generated by this vibration, and the angular velocity is obtained.

As described above, the first vibrator 60 is arranged such that the angle formed between the main surface 60a of the first vibrator 60 and the main surface 90a of the wiring board 90 is a right angle. Thus, the major surface 60a of the first oscillator 60, since the perpendicular to the Y ₀ axis direction, the physical quantity for Y ₀ axis (e.g., angular velocity) can be detected. In other words, a physical quantity in the horizontal direction can be detected with respect to the X ₀ -Y ₀ plane, which is the installation surface or the reference surface. Note that the right angle is preferably 90 °, but may include an error of several degrees.

  As shown in FIGS. 1 to 3, the second semiconductor substrate 12 includes a main surface 12 a disposed so that an angle formed with the active surface 11 a is a right angle, and a back surface that is a surface opposite to the main surface 12 a. 12b and a side surface 12c connecting the main surface 12a and the back surface 12b. The second semiconductor substrate 12 is provided above the main surface 90a with the back surface 12b as a connection surface and on the side surface 12c so as to be adjacent to or in contact with the support substrate 80. The method for connecting the second semiconductor substrate 12 to the wiring substrate 90 is not particularly limited. For example, as shown in FIG. 3, the second semiconductor substrate 12 is fixed to the wiring substrate 90 via an adhesive member 93. Also good. The second semiconductor substrate 12 is made of a known semiconductor substrate, and is made of, for example, the same material as the first semiconductor substrate 11.

  As shown in FIG. 3, the second insulating layer 17 is formed on the main surface 12a. The second insulating layer 17 may be a passivation film. The material of the second insulating layer 17 is not particularly limited as long as it has electrical insulation. For example, the second insulating layer 17 may be the same material as the first insulating layer 16.

  As shown in FIG. 3, the second resin layer 22 (resin layer 20) is located above the main surface 12a (second insulating layer 17). As shown in FIG. 3, the second resin layer 22 has an upper surface 22a opposite to the surface on the main surface 12a (second insulating layer 17) side. The second resin layer 22 is formed from a resin having a stress relaxation function. For example, the second resin layer 22 may be made of the same material as the first resin layer 21.

  As shown in FIG. 3, the connection terminal 33 connected to the second portion 32 b of the second wiring 32 is located on the upper surface 22 a of the second resin layer 22. The connection terminal 33 may be the second portion 32b itself of the second wiring 32, or may be a pad in which the second portion 32b is connected to a conductive member made of a material different from that of the second wiring 32. May be. The second portion 32 b is a portion formed to extend from the first portion 32 a of the second wiring 32 connected to the second electrode 15 of the first semiconductor substrate 11 onto the upper surface 22 a of the second resin layer 22. Yes (not shown). In other words, the connection terminal 33 may be a part of the wiring pattern of the second wiring 32 that is electrically connected to the second electrode 15. The configuration and material of the connection terminal 33 are not particularly limited as long as they have conductivity, but may be the same configuration and material as the first electrode 14, for example.

  Here, as shown in FIG. 3, the second resin layer 22 above the second semiconductor substrate 12 is continuous with the first resin layer 21 above the first semiconductor substrate 11 via the third resin layer 23. ing. In other words, the first structure 70 includes the first resin layer 21 located above the first semiconductor substrate 11, the second resin layer 22 located above the second semiconductor substrate 12, and the first resin layer 21. A resin layer 20 having a third resin layer 23 continuous with the second resin layer 22 is provided. As a result, the second wiring 32 is connected to the second electrode 15 from the first portion 32a and the first portion 32a through the top of the third resin layer 23. And a second wiring portion 32b positioned so as to extend upward.

As shown in FIG. 3, the third resin layer 23 is a bent portion 23 that is bent so that the angle formed by the active surface 11 a of the first semiconductor substrate 11 and the main surface 12 a of the second semiconductor substrate 12 is a right angle. is there. Therefore, by adjusting the bending angle at the bending portion 23, the installation angle of the first semiconductor substrate 11 and the angle of the main surface 60a of the first vibrator 60 with respect to the X ₀ -Y ₀ plane can be adjusted. The bending angle of the bent portion 23 is fixed after the angle θ1 formed by the main surface 60a of the first vibrator 60 and the main surface 90a of the wiring board 90 is adjusted to be a right angle. Note that the right angle is preferably 90 °, but may include an error of several degrees.

  As shown in FIG. 3, a resist layer 40 may be formed on the second resin layer 22. The resist layer 40 has an opening 41 at a portion where the connection terminal 33 is formed. As shown in FIG. 3, the resist layer 40 may be formed continuously with the resist layer 40 formed above the first semiconductor substrate 11. According to this, since the resist layer 40 is formed also on the 3rd resin layer 23 which is a bending part, the physical intensity | strength of the bending part 23 improves.

  As shown in FIG. 3, the connection terminal 33 (second wiring 32) of the first structure 70 is electrically connected to the connection terminal 91 (third wiring 91) of the wiring substrate 90 by a wire 92. . The wire 92 is not particularly limited as long as it is a material used in a known wire bonding technique. For example, a metal such as gold (Au) or aluminum (Al) may be used.

Here, as shown in FIG. 3, the wire bonding between the connection terminal 33 and the connection terminal 91 is a connection provided on a plane parallel to each other (for example, a plane parallel to the X ₀ -Y ₀ plane). Between terminals. Therefore, the wire 92 can be formed reliably and electrical connection reliability can be ensured. As described above, the first structure 70 and the wiring board 90 are connected (mounted) electrically and mechanically. Thereby, the external terminal 4 and the integrated circuit 18 of the first structure 70 (sensor device 70) are electrically connected.

  From the above, the sensor module 100 according to the present embodiment can be configured.

  The sensor module 100 according to the present embodiment has the following features, for example.

  According to the sensor module 100 according to the present embodiment, the sensor module can detect a physical quantity in the horizontal direction with respect to the installation surface or the reference surface of the sensor module 100, and can be reduced in size and orthogonal to each other. Therefore, it is not necessary to perform wire bonding between the surface and the surface, so that a sensor module with improved electrical connection reliability can be provided.

In the sensor module 100 according to the present embodiment, the first semiconductor substrate 11, the second semiconductor substrate 12, and the resin layer 20 (first resin layer 21, second resin layer 22, A third resin layer 23) is provided, and the third resin portion 23 is bent. According to this, the principal surface 60a of the first oscillator 60 of the first structure 70 a sensor device, is perpendicular angle between the X ₀ -Y ₀ plane which is the installation surface or reference plane of the sensor module A sensor module 100 can be provided. In other words, when the X ₀ -Y ₀ plane is the installation surface of the sensor module, it is possible to provide the sensor module 100 that can sense a physical quantity in the Y ₀ axis direction. Note that the right angle is preferably 90 °, but may include an error of several degrees.

Further, according to the sensor module 100 according to the present embodiment, the connection terminal 33 is provided above the main surface 12 a of the second semiconductor substrate 12, which is a surface parallel to the main surface 90 a of the wiring substrate 90. Specifically, the connection terminal 33 and the connection terminal 91 are both connection terminals provided on the X ₀ -Y ₀ plane. Therefore, when the connection terminal 91 of the wiring board 90 and the connection terminal 33 of the first structure 70 are wire-bonded, it can be reliably electrically connected without any technical difficulty. According to this, it is possible to provide the sensor module 100 which is a sensing motor capable of sensing the physical quantity as described above, and does not need to perform wire bonding between surfaces orthogonal to each other. For example, when wire bonding is performed between surfaces orthogonal to each other, it is technically difficult to form a reliable wire, and by performing such wire bonding, the reliability of electrical bonding of the sensor module is reduced. . On the other hand, since the sensor module 100 according to the present embodiment can provide a sensor module that does not require wire bonding as described above, the sensor module 100 with improved electrical connection reliability is provided. be able to.

In the sensor module 100 according to the present embodiment, the main surface 60a of the first vibrator 60 and the main surface 90a of the wiring board 90, for example, are used without using a package that individually accommodates the first vibrator 60. It is possible to provide the sensor module 100 in which an angle formed with the X ₀ -Y ₀ plane (an installation surface of the sensor module 100) is a right angle. Therefore, since the film thickness of the individual package is not required, it can contribute to further downsizing of the sensor module. Note that the right angle is preferably 90 °, but may include an error of several degrees.

  In the sensor module 100 according to the present embodiment, when the first structure 70 is processed, the main surface 60a of the first vibrator 60 serving as a reference for bending is exposed. It is not necessary to improve the bending processing accuracy, and for example, a motion sensor corresponding to a plurality of axes (multi-axis) can be easily provided.

1.2. Next, a method for manufacturing the sensor module 100 will be described with reference to the drawings.

  6 is a flowchart of a method for manufacturing the sensor module 100, and FIGS. 7 to 13 are a plan view and a cross-sectional view schematically showing an example of a manufacturing process of the sensor module 100. FIG. FIG. 7A is a plan view schematically showing the semiconductor wafer 110, and FIG. 7B is a cross-sectional view taken along the line VIIB-VIIB in FIG. 7A. FIG. 8A and FIG. 8B are enlarged plan views for explaining the manufacturing method of the preparation process (S1) of the first structure 70. FIG. 9A to 9C are cross-sectional views taken along line IX-IX in FIG. FIG. 10A is an enlarged plan view illustrating the manufacturing method of the preparation step (S1) of the first structure 70, and FIG. 10B is a cross-sectional view taken along the line XB-XB in FIG. . 11A to 12A are enlarged plan views for explaining the manufacturing method of the preparation step (S1) of the first structure 70. FIG. 12B is a cross-sectional view taken along the line XIIB-XIIB in FIG. Note that in FIGS. 7 to 12B, some components are omitted or simplified for convenience.

  As shown in FIG. 6, the manufacturing method of the sensor module 100 according to the present embodiment includes a first structure 70 preparation step (S1), a second structure 170 preparation step (S2), and a first structure body. 70 and the connection process (S3) of the 2nd structure 170. Here, the order of the preparation process (S1) of the first structure 70 and the preparation process (S2) of the second structure 170 is not limited, and these processes may be performed simultaneously in parallel.

1.2.1 Step of Preparing First Structure 70 (S1)
As shown in FIGS. 6 to 13, the preparation process (S1) of the first structure 70 includes a semiconductor substrate preparation process (S1-1), a resin layer formation process (S1-2), and a wiring formation process (S1). -3), a semiconductor substrate dividing step (S1-4), a vibrator connecting step (S1-5), and a bending step (S1-6). Here, the order of the steps of the semiconductor substrate dividing step (S1-4) and the vibrator connecting step (S1-5) is not particularly limited, and after performing the vibrator connecting step (S1-5) first, A semiconductor substrate dividing step (S1-4) may be performed.

[Semiconductor substrate preparation step (S1-1)]
In this step, a semiconductor substrate is prepared. The prepared semiconductor substrate may be a chip cut out from the wafer. Further, the semiconductor substrate to be prepared may be a semiconductor wafer (silicon wafer) 110 having a plurality of chip regions 111 as shown in FIGS. 7A and 7B. Each chip region 111 is partitioned by a plurality of grid-like scribe lines (chip cut lines) L1. As shown in FIG. 7A, a plurality of chip regions (in the example shown, regions indicated by diagonal lines and gray scales) formed in the central region of the semiconductor wafer 110 are effective chip regions 112 and their effective A peripheral area surrounding the chip area 112 is defined as an ineffective chip area 113.

  An integrated circuit 18 is formed in each chip region of the semiconductor wafer 110 as shown in FIG. As shown in FIG. 7B, the surface of the semiconductor wafer 110 on which the plurality of integrated circuits 18 are formed is defined as an active surface 110a. The active surface 110a is a surface constituting the active surface 11a or the main surface 12a in the sensor module 100 after the manufacturing process. Here, although not illustrated, in each chip region 11, an insulating film constituting the first insulating film 16 and the second insulating film 17 is formed in the sensor module 100 after the manufacturing process.

  Further, as shown in FIGS. 7A to 8A, in each chip area 111, a first area 115 indicated by diagonal lines and a second area 116 indicated by gray scale are set by a dividing line L2. Has been. The first region 115 includes the integrated circuit 18 and is a portion that becomes the first semiconductor substrate 11 in the sensor module 100 after the manufacturing process, and the second region 116 is a portion that becomes the second semiconductor substrate 12. Accordingly, the first electrode 14 and the second electrode 15 are formed in the first region 115.

[Resin layer forming step (S1-2)]
As shown in FIGS. 8B and 9A, a resin layer 20a is formed on the active surface 110a of the prepared semiconductor wafer 110. The resin layer 20a is a portion that becomes the resin layer 20 in the sensor module 100 after the manufacturing process, and is different from the resin layer 20 only in that the third resin layer 23 is not bent. The method for forming the resin layer 20a is not particularly limited, and is formed by a known film formation and patterning technique. The resin layer 20a may be formed by, for example, forming a photosensitive resin layer above the active surface 110a and then patterning the resin layer 20a into a desired shape by a photolithography technique such as exposure and development (not shown). .

[Wiring forming step (S1-3)]
Next, as shown in FIGS. 8B, 9B, and 9C, the first wiring 31 and the second wiring 32 (connection terminals 33) that are rearranged wirings are formed. The wiring pattern (first wiring 31 and second wiring 32) formed in each chip region 111 is the same as the wiring pattern (first wiring 31 and second wiring 32) in the sensor module 100 after the manufacturing process. The method for forming the wiring pattern is not particularly limited, and the wiring pattern is formed by a known film formation and patterning technique. For example, it includes forming a conductive layer by sputtering or electroless plating, and appropriately forming a desired resist layer.

  Alternatively, the resist layer 40 may be formed after the first wiring 31 and the second wiring 32 having a desired wiring pattern are formed.

[Semiconductor substrate dividing step (S1-4)]
Next, as shown in FIGS. 10A and 10B, the semiconductor wafer 110 is divided along the dividing line L2, and each chip region 111 is divided into a first region 115 and a second region 116. To do. Here, as shown in FIG. 10B, the resin layer 20a above the dividing line L2 is not divided. Thereby, in the dividing line L2, the opening part 13 in which the resin layer 20a forms the bottom surface is formed. By this step, as shown in FIG. 10B, the first semiconductor substrate 11 and the second semiconductor substrate 12 can be formed. Therefore, the opening part 13 is comprised by the side surface 11c, the side surface 12c, and the resin layer 20a.

  Here, the resin layer 20a constituting a part of the opening 13 is a portion that becomes the third resin layer 23 in the sensor module 100 after the manufacturing process.

  The dividing method is not particularly limited, and a known dividing method (scribe method) can be used. For example, a dividing method using a cutter wheel having a cutting edge, a dividing method using a laser, a dividing method using dry etching, or the like can be used.

  Further, as shown in FIG. 11, this step may include a step of dividing each chip region in the scribe line L1. In addition, this process may be performed before the process which divides | segments the semiconductor wafer 110 in the dividing line L2, and may be performed simultaneously.

[Transducer Connection Step (S1-5)]
Next, as shown in FIGS. 12A and 12B, the first vibrator 60 is connected (mounted) to the first wiring 31. In this case, as described above, a step of providing the external connection terminal 50 may be included. Specifically, in this step, the step of forming the stud bump 50a on the first wiring 31, the step of forming the solder ball 50b on the stud bump 50a, and the first vibration on the external connection terminal 50 are performed. Connecting the child 60. According to this, the main surface 60a of the first vibrator 60 can be arranged with high accuracy.

  The first structure 70a can be formed by the above steps (S1-1) to (S1-5). The first structure 70a differs from the first structure 70 of the sensor module 100 after the manufacturing process only in that the third resin layer 23 that is a bent portion is not bent.

[Bending step (S1-6)]
Next, the first structure 70 is formed by bending the resin layer 20a constituting the opening 13 of the first structure 70a as a portion to be bent. For example, the angle to be bent may be a right angle (see FIG. 3). Note that the right angle is preferably 90 °, but may include an error of several degrees.

  Through the above steps, the first structure 70 (sensor device 70) can be prepared.

1.2.2 Step for Preparing Second Structure 170 (S2)
FIG. 13 is a cross-sectional view of the second structure 170 to be prepared. As shown in FIG. 6, the preparation process (S2) of the second structure 170 includes a wiring board preparation process (S2-1) and a support substrate connection process (S2-2).

[Wiring board preparation step (S2-1)]
As shown in FIG. 13, the prepared wiring board 90 is provided with an adhesive 93 above the main surface 90a. The adhesive 93 is provided in a region of the first structure 70 where the second semiconductor substrate 12 is connected and a region where the support substrate 80 is connected.

[Support Substrate Connection Step (S2-2)]
Next, as shown in FIG. 13, the support substrate 80 is connected to the wiring substrate 90. Thereby, the support substrate 80 is mechanically connected to the wiring substrate 90 and fixed.

  Through the above steps, the second structure 170 can be prepared.

1.2.3 Connection Step of First Structure 70 and Second Structure 170 (S3)
As shown in FIG. 6, the connection process (S3) of the first structure 70 and the second structure 170 includes the first structure connection process (S3-1) and the wire bonding process (S3-2). Including.

[First structure connecting step (S3-1)]
Next, the second semiconductor substrate 12 of the first structure 70 is mounted above the main surface 90a of the wiring substrate 90 using the connection surface 12b of the second semiconductor substrate as a connection surface (see FIG. 3). Here, the first semiconductor substrate 11 is mounted above the main surface 80a of the support substrate 80 with the side surface 11c as a connection surface. Although not shown, an adhesive may be provided between the side surface 11c and the main surface 80a to fix the first semiconductor substrate 11. Further, the second semiconductor substrate 12 may be mounted so as to be adjacent to or in contact with the support substrate 80. Here, although not shown, an adhesive may be provided between the side surface 12c of the second semiconductor substrate 12 and the support substrate.

[Wire bonding process (S3-2)]
Next, the connection terminal 33 (second wiring 32) of the first structure 70 and the connection terminal 91 (third wiring 91) of the wiring substrate 90 are electrically connected by wire bonding with a wire 92. To do. Thereby, the first structure 70 is electrically and mechanically connected to the second structure 170.

Here, the connection terminal 33 and the connection terminal 91 are both connection terminals provided on the X ₀ -Y ₀ plane. Therefore, the wire bonding between the connection terminal 33 and the connection terminal 91 is performed between the connection terminals provided on the surfaces parallel to each other (see FIG. 3). According to this, the wire 92 can be formed reliably and electrical connection reliability can be ensured.

  In this step, when the support substrate 80 is, for example, a semiconductor substrate and has a connection terminal (not shown) above the main surface 80a, wire bonding is performed in this step to connect the support substrate 80 and the wiring. The substrate 90 may be electrically connected.

  Thus, the first structure 70 and the second structure 170 can be connected.

  In the manufacturing method according to the present embodiment, although not shown, a package preparation step (see FIG. 1) for preparing the package 1 and the first structure body 70 and the second structure body 170 that are sensor devices are accommodated in the package 1. 1 (see FIG. 1), the step of joining the lid 2 to the package 1 (see FIG. 1), the inside of the package 1 in which the first structure 70 as the sensor device is accommodated, and the inside of the package May be included in a reduced pressure state (or a vacuum state).

  As described above, the sensor module 100 according to the present embodiment can be manufactured.

  The manufacturing method of the sensor module 100 according to the present embodiment has the following features, for example.

  According to the manufacturing method of the sensor module 100 according to the present embodiment, the sensor module can detect a physical quantity in the horizontal direction with respect to the installation surface or the reference surface of the sensor module 100, and can be reduced in size. It is possible to provide a method for manufacturing a sensor module that does not require wire bonding between orthogonal surfaces.

According to the manufacturing method of the sensor module 100 according to the present embodiment, the process of dividing the semiconductor substrate 110 without dividing the resin layer 20a and forming the first semiconductor substrate 11 and the second semiconductor substrate 12 (dividing process). : S1-4) and the portion of the resin layer 20a (third resin layer 23) that overlaps the region between the first semiconductor substrate 11 and the second semiconductor substrate 12 are bent to form the first structure 70. It has a process (bending process: S1-6). According to this, the main surface 60a of the first vibrator 60 of the first structure 70 that is a sensor device and the X ₀ -Y ₀ plane (the installation surface of the sensor module 100) such as the main surface 90a of the wiring board 90, for example. And a manufacturing method for manufacturing a sensor module having a right angle with respect to (). In other words, when the X ₀ -Y ₀ plane is the installation surface of the sensor module, it is possible to provide a method for manufacturing the sensor module 100 that can sense a physical quantity in the Y ₀ axis direction. Note that the right angle is preferably 90 °, but may include an error of several degrees.

According to the method for manufacturing the sensor module 100 according to the present embodiment, the connection terminal 33 is formed above the main surface 12 a of the second semiconductor substrate 12, which is a surface parallel to the main surface 90 a of the wiring substrate 90. Specifically, the connection terminal 33 and the connection terminal 91 can both be connection terminals provided on the X ₀ -Y ₀ plane. Therefore, in the step of wire bonding the connection terminal 91 of the wiring board 90 and the connection terminal 33 of the first structure 70, electrical connection can be reliably performed without any technical difficulty. According to this, there is provided a manufacturing method of a sensing motor capable of sensing the physical quantity as described above, and does not require wire bonding between surfaces orthogonal to each other. can do. For example, when wire bonding is performed between surfaces orthogonal to each other, it is technically difficult to form a reliable wire, and by performing such wire bonding, the reliability of electrical bonding of the sensor module is reduced. . In contrast, the method for manufacturing the sensor module 100 according to the present embodiment can provide a method for manufacturing a sensor module that does not require wire bonding as described above. In other words, a method for manufacturing the sensor module 100 with improved electrical connection reliability can be provided.

Further, in the method for manufacturing the sensor module 100 according to the present embodiment, the main surface 60a of the first vibrator 60 and, for example, the main of the wiring board 90 are formed without forming a package for individually housing the first vibrator 60. It is possible to manufacture the sensor module 100 in which the angle formed with the X ₀ -Y ₀ plane (the installation surface of the sensor module 100) such as the surface 90a is a right angle. Therefore, since the thickness of the individual package is not required, the sensor module can be reduced in size. Note that the right angle is preferably 90 °, but may include an error of several degrees.

  Further, in the method for manufacturing the sensor module 100 according to the present embodiment, when the first structural body 70 is processed, the first vibrator 60 that serves as a reference for bending is not accommodated in the individual package. The main surface 60a is exposed. Therefore, it is not necessary to improve the processing accuracy for bending the third resin portion 23, and for example, a motion sensor corresponding to a plurality of axes (multi-axis) can be easily manufactured with high accuracy.

1.3 Modifications Note that the method for manufacturing the sensor module 100 according to the present embodiment is not limited to the one described above. Below, the modification of the manufacturing method of the sensor module 100 which concerns on this embodiment is demonstrated, referring drawings.

  FIG. 14 is a cross-sectional view illustrating a modified example of the method for manufacturing the sensor module 100.

  For example, as shown in FIG. 14, in the [resin layer forming step (S1-2)], the second resin layer 28 is formed on the portion of the resin layer 20a that becomes the third resin layer 23 of the resin layer 20. May be. According to this, it forms so that the film thickness of the part used as the 3rd resin layer 23 may become thicker than the film thickness of the 1st resin layer 21 or the 2nd resin layer 22. According to this, in the [semiconductor substrate dividing step (S1-4)], only the semiconductor substrate can be divided more safely. Moreover, since the intensity | strength of the 3rd resin layer 23 used as a bending part can be improved, a bending process can be implemented more safely also in [bending process (S1-6)].

2. Second Embodiment 2.1. Sensor Module Next, a sensor module 200 according to the second embodiment will be described with reference to the drawings.

FIGS. 15B and 15A are top views (views of the X ₀ -Y ₀ plane in the Z ₀ axis direction) schematically showing the sensor module 200 according to the present embodiment. 15B and 15B are cross-sectional views taken along line XVB-XVB in FIGS. 15B and 15A. In addition, in FIG. 15 (B) (A), illustration of the cover body 2 is abbreviate | omitted for convenience.

  In the sensor module 200 according to the present embodiment, the point that includes two first structures 70 in the package 1 and the support substrate 80 that constitutes the second structure 170 is the third semiconductor substrate 180 that includes the integrated circuit 18. It differs from the sensor module 100 according to the first embodiment only in a certain point. Hereinafter, in the sensor module 200 according to the second embodiment, members having the same functions as those of the constituent members of the sensor module 100 according to the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted.

As shown in FIGS. 15A and 15B, the sensor module 200 includes two first structures 70 (sensor devices 70). As shown in FIG. 15 (A), the two first structures 70 have an angle θ2 formed between the main surfaces 60a of the first vibrators 60 at a right angle above the main surface 90a of the wiring board 90. Arranged to be. Accordingly, therefore, because the main surface 60a of one of the first oscillator 60 is perpendicular to the _{Y 0} axis direction, the major surface 60a of the first oscillator 60 is of the other, which is orthogonal to the _{X 0} axis direction, X A physical quantity (for example, angular velocity) with respect to the ₀ axis and the Y ₀ axis can be detected. In other words, it is possible to detect physical quantities in two directions that are horizontal to the X ₀ -Y ₀ plane that is the installation surface or the reference surface and are orthogonal to each other. Note that the right angle is preferably 90 °, but may include an error of several degrees.

  As shown in FIGS. 15A and 15B, two adhesive sheets 130 are continuously attached to the non-active surface 11b of the first semiconductor substrate 11 of the two first structures 70, so that two The first structure 70 may be fixed. Further, the adhesive sheet 130 is bent so that the angle θ2 is a right angle. The material of the adhesive sheet 130 is not particularly limited as long as it has adhesiveness and can be bent. For example, an adhesive sheet such as a polyimide resin may be used. Note that the right angle is preferably 90 °, but may include an error of several degrees.

Here, as shown in FIG. 15A, a structure including two first structures 70 in the present embodiment is referred to as a third structure 270. As described above, the third structure 270 is a sensor device 270 corresponding to a plurality of axes _{(X 0} axis and _{Y 0} axis).

  Next, as shown in FIG. 15B, in the sensor module 200, the support substrate 80 of the second structure 170 of the sensor module 100 in the first embodiment is a third semiconductor substrate 180 including the integrated circuit 18. is there. Here, a structure including the wiring board 90 and the third semiconductor substrate 180 is referred to as a fourth structure 280. The integrated circuit 18 is formed on the main surface 180 a of the third semiconductor substrate 180 corresponding to the main surface 80 a of the support substrate 80. Therefore, as shown in FIG. 15B, the main surface 180a is an active surface 180a.

  As shown in FIGS. 15A and 15B, the active surface 180a includes a first region 215 where the two first semiconductor substrates 11 of the third structure 270 are placed, and the second vibrator 60. A second region 216 to be mounted.

  Here, the structure and materials of the third semiconductor substrate 180 related to the sensor module 200 and the members positioned on the active surface 180a are described in the section “1.1 Sensor Module According to the First Embodiment”. In the 1st structure 70 which concerns on the sensor module 100, the 1st semiconductor substrate 11 and the 2nd semiconductor substrate 12 are not divided | segmented, but it is equivalent to the thing of the state in which the 3rd resin layer 23 is not bent. Specifically, in FIG. 3, the first electrode 14, the second electrode 15, the first resin layer 21 of the resin layer 20, the second resin layer 22, the first wiring 31, the second wiring 32, and the connection terminal 33 ( Hereinafter, the “connection terminal 133”), the external connection terminal 50, and the first vibrator 60 (hereinafter referred to as “second vibrator 60”) are provided above the active surface 180a that is the same plane. It has a form.

The second oscillator 60 is a sensor element mounted on the third semiconductor substrate 180 of the fourth structure 280, as shown in FIG. 15 (B), the main surface 60a _is, X 0 -Y ₀ plane substantially It connects to the 1st wiring 31 so that it may become parallel (not shown).

  15B, the main surface 60a of the second vibrator 60 mounted on the third semiconductor substrate 180 of the fourth structure 280 and the first semiconductor substrate 11 of the third structure 270 The third structure 270 and the fourth structure 280 are mounted in the package 1 so that the angle θ1 formed with the main surface 60a of the mounted first vibrator 60 is a right angle. Note that the right angle is preferably 90 °, but may include an error of several degrees.

According to the above, the main surface 60a of the second oscillator 60, since the perpendicular to the Z ₀ axis direction, it is possible to detect a physical quantity (e.g., angular velocity) against Z ₀ axis. In other words, a physical quantity in the vertical direction can be detected with respect to the X ₀ -Y ₀ plane, which is the installation surface or the reference surface. Therefore, the fourth structure 280 is a sensor device 280 corresponding to the _{Z 0} axis.

  Further, the connection terminal 133 is formed above the active surface 180 a of the third semiconductor device 180. As shown in FIGS. 15A and 15B, the connection terminal 133 is formed at the peripheral edge of the third semiconductor substrate 180 and above the second region 216. Similarly to the connection terminal 33, the connection terminal 133 is electrically connected to the connection terminal 91 of the wiring board 90 by wire bonding that forms a wire 92. Here, as shown in FIG. 15B, the wire bonding of the connection terminal 133 and the connection terminal 91 is performed between the connection terminals provided on the surfaces parallel to each other. Therefore, the wire 92 can be formed reliably and electrical connection reliability can be ensured.

  From the above, the sensor module 200 according to the present embodiment can be configured.

  The sensor module 200 according to the present embodiment has, for example, the following characteristics in addition to the characteristics of the sensor module 100 according to the first embodiment.

As described above, in the sensor module 200, the third structure 270 including the first structure 70 that does not require a package for each vibrator and the support substrate 80 serve as the third semiconductor substrate 180, and the second vibrator. And a fourth structure 280 having 60. Therefore, when the X ₀ -Y ₀ plane is the installation surface of the sensor module, a method for manufacturing the sensor module 100 that can sense physical quantities in the X ₀ axis direction, the Y ₀ axis direction, and the Z ₀ axis direction is provided. be able to.

  Thus, the sensor module 200 can be used for camera shake correction of an imaging device, attitude detection and attitude control of a moving body such as a vehicle in a mobile navigation system using a GPS (Global Positioning System) satellite signal.

The connection terminal 133 is provided above the main surface 80 a of the third semiconductor substrate 180, which is a surface parallel to the main surface 90 a of the wiring substrate 90. Specifically, the connection terminal 133 and the connection terminal 91 are both connection terminals provided on the X ₀ -Y ₀ plane. According to this, when the connection terminal 91 of the wiring board 90 and the connection terminal 33 of the first structure 70 are wire-bonded, it is possible to reliably connect them without causing technical difficulties. it can. Therefore, the sensor module 200 with improved electrical connection reliability can be provided.

2.2. Next, a method for manufacturing the sensor module 200 according to the second embodiment will be described with reference to the drawings.

  FIG. 16 is a flowchart of a manufacturing method of the sensor module 200, and FIGS. 17A to 17C are perspective views schematically illustrating a manufacturing method of the third structure 270, and FIGS. 20 is a plan view and a perspective view schematically illustrating a method for manufacturing the fourth structure 280, and FIG. 21 is a perspective view schematically illustrating a method for manufacturing the sensor module 200.

  Hereinafter, in the description of the method for manufacturing the sensor module 200 according to the second embodiment, detailed description of steps substantially the same as the method for manufacturing the sensor module 100 according to the first embodiment is omitted.

  As shown in FIG. 16, the manufacturing method of the sensor module 200 according to the present embodiment includes a third structure 270 preparation step (S4), a fourth structure 280 preparation step (S5), a third structure, 4 structure connection step (S6). Here, the order of the steps of the third structure 270 preparation step (S4) and the fourth structure 280 preparation step (S5) is not limited, and these steps may be performed in parallel.

2.2.1 Step of preparing third structure 270 (S4)
As shown in FIG. 16, the third structure 270 preparation step (S4) includes a semiconductor wafer preparation step (S4-1), a resin layer formation step (S4-2), and a wiring formation step (S4-3). Semiconductor substrate dividing step (S4-4), vibrator connecting step (S4-5), adhesive sheet attaching step (S4-6), bending step 1 (S4-7), and bending step 2 (S4) -8). Here, the order of the steps of the semiconductor substrate dividing step (S4-4) and the vibrator connecting step (S4-5) is not particularly limited, and after performing the vibrator connecting step (S4-5) first, A semiconductor substrate dividing step (S4-4) may be performed.

  Among the above steps of the third structure 270 preparation step (S4), the semiconductor wafer preparation step (S4-1), the resin layer formation step (S4-2), the wiring formation step (S4-3), and the semiconductor substrate The dividing step (S4-4) and the vibrator connecting step (S4-5) are respectively a semiconductor substrate preparation step (S1-1), a resin layer forming step (S1-2), and a wiring forming step (S1- 3), the semiconductor substrate dividing step (S1-4), and the vibrator connecting step (S1-5) are substantially the same, and the description thereof is omitted.

[Adhesive sheet pasting step (S4-6)]
As shown in FIG. 17A, two adjacent first structures 70a are prepared in the same steps as the semiconductor substrate preparation step (S1-1) to the vibrator connection step (S1-5). As the two first structures 70 a, for example, the first structures 70 a formed in two adjacent chip regions 111 among the plurality of chip regions 111 of the semiconductor wafer 110 may be used. As shown in FIG. 17A, after the adhesive sheet 130 is disposed so as to oppose the back surfaces (inactive surfaces 11b) of the two first structures 70a, the adhesive sheets 130 are placed on the respective inactive surfaces 11b. Affix so as to straddle (see FIG. 17B). Thereby, the two first structures 70a can be an integral structure.

[Bending step 1 (S4-7)]
As shown in FIG. 17B, the two first structures 70a bonded to the adhesive sheet 130 are bent in the same manner as in the bending step (S1-6). By this step, the two first structures 70 bonded to the adhesive sheet 130 can be formed.

[Bending process 2 (S4-8)]
Next, as shown in FIG. 17 (C), two angles of the adhesive sheet 130 are set so that the angle θ2 formed between the main surfaces 60a of the first vibrators 60 of the first structures 70 is a right angle. A portion overlapping the boundary portion of the first structure 70 is bent (see FIG. 15A). Note that the right angle is preferably 90 °, but may include an error of several degrees.

  Through the above steps, the third structure 270 can be formed.

2.2.2 Fourth structure 280 preparation step (S5)
As shown in FIG. 16, the fourth structure 280 preparation step (S5) includes a semiconductor substrate preparation step (S5-1), a resin layer formation step (S5-2), and a wiring formation step (S5-3). The semiconductor substrate dividing step (S5-4), the vibrator connecting step (S5-5), the wiring substrate preparing step (S5-6), and the semiconductor substrate connecting step (S5-7) are included. Here, the order of the steps of the semiconductor substrate dividing step (S5-4) and the vibrator connecting step (S5-5) is not particularly limited, and after performing the vibrator connecting step (S5-5) first, A semiconductor substrate dividing step (S5-4) may be performed.

  Among the steps of the fourth structure 280 preparation step (S5), the resin layer forming step (S5-2), the wiring forming step (S5-3), the semiconductor substrate dividing step (S5-4), and the vibrator Since the connecting step (S5-5) is substantially the same as the resin layer forming step (S1-2), the wiring forming step (S1-3), and the vibrator connecting step (S1-5), respectively. The description is omitted.

[Semiconductor substrate preparation step (S5-1)]
In this step, a semiconductor substrate is prepared. The prepared semiconductor substrate may be a chip cut out from the wafer. The prepared semiconductor substrate may be a semiconductor wafer (silicon wafer) 210 having a plurality of chip regions 211 as shown in FIG. Each chip region 211 is partitioned by a plurality of grid-like scribe lines (chip cut lines) L1. As shown in FIG. 18, a plurality of chip regions (regions displayed in oblique lines and gray scales in the illustrated example) formed in the central region of the semiconductor wafer 110 are defined as effective chip regions 212, and the effective chip regions 212 are illustrated. A peripheral area surrounding the chip is defined as an ineffective chip area 213. The semiconductor wafer 210 may have the same internal configuration and material as the semiconductor wafer 110.

  Here, as shown in FIG. 18, in each chip region 211 of the semiconductor wafer 210 prepared in this step, a first region 215 indicated by diagonal lines and a second region 216 indicated by gray scale are set. Yes. The first area 215 includes the integrated circuit 18 and is a portion where the second vibrator 60 is provided above the sensor module 200 after the manufacturing process. The second area 216 is the sensor module 200 after the manufacturing process. This is a portion where the third structure 270 is provided above. More specifically, the second region 216 is an L-shaped region provided along two adjacent sides of the four sides along the scribe line L1 that is the boundary line of the chip region 211. The first area 215 is a rectangular area excluding the second area 216.

  Since the second region 216 is a portion where the third structure 270 is provided above, in the subsequent resin layer forming step (S5-2) and the wiring forming step (S5-3), the second region 216 is desired in the first region 215. The resin layer and the wiring are formed.

[Semiconductor substrate dividing step (S5-4)]
In the semiconductor substrate dividing step (S5-4) in the present embodiment, the step of dividing the semiconductor substrate along the dividing line L2 as in the manufacturing method according to the first embodiment is not included, and as shown in FIG. A dividing step is performed along the scribe line (chip cutting line) L1, and the third semiconductor substrate 180 is formed. As shown in FIG. 19, the second vibrator 60 may be mounted before this step, or may be mounted after this step.

[Semiconductor substrate connection step (S5-7)]
As shown in FIG. 20, the third semiconductor substrate 180 is connected to the main surface 90 a of the wiring substrate 90 with the surface opposite to the surface on which the second vibrator 60 of the third semiconductor substrate 180 is mounted as a connection surface. . The connection method may be the same as the method of connecting the support substrate 80 to the wiring substrate 90 in the support substrate connection step (S2-2) in the first embodiment.

  Through the above steps, the fourth structure 280 can be formed.

2.2.3 Step of connecting the third structure and the fourth structure (S6)
As shown in FIG. 21, the third structure 270 is connected to the fourth structure 280. This process is substantially the same as the connection process (S3) of the first structure 70 and the second structure 170 of the first embodiment. Specifically, the third structure 270 is arranged such that the first semiconductor substrates 11 of the two first structures 70 of the third structure 270 are disposed on the second regions 216 of the fourth structure 280. Is connected to the fourth structure 280 using an adhesive or the like.

  Moreover, this process includes the wire bonding process by the wire 92 (refer FIG. 15 (B)) similarly to the connection process (S3) of the 1st structure 70 and the 2nd structure 170 of 1st Embodiment. As a result, the third structure 270 is electrically and mechanically connected to the fourth structure 280.

  In the manufacturing method according to the present embodiment, although not shown, a package preparation step (see FIG. 1) for preparing the package 1 and the third structure 270 and the fourth structure 280 that are sensor devices are accommodated in the package 1. 1 (see FIG. 1), the step of joining the lid 2 to the package 1 (see FIG. 1), the inside of the package 1 in which the first structure 70 as the sensor device is accommodated, and the inside of the package May be included in a reduced pressure state (or a vacuum state).

  As described above, the sensor module 200 according to the present embodiment can be manufactured.

  The manufacturing method of the sensor module 200 according to the present embodiment has, for example, the following characteristics in addition to the characteristics of the manufacturing method of the sensor module 100 according to the first embodiment.

  According to the method for manufacturing the sensor module 200 according to the present embodiment, physical quantities in two directions that are horizontal to the sensor module installation surface or the reference surface and perpendicular to each other and in a direction perpendicular to the installation surface are obtained. It is a sensor module that can detect multiple axes (multi-axis), can be downsized, and does not require wire bonding between surfaces orthogonal to each other, so electrical connection reliability is high An improved method of manufacturing a sensor module can be provided.

  Although the embodiments of the present invention have been described in detail as described above, those skilled in the art can easily understand that many modifications can be made without departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention.

  In addition, embodiment mentioned above and a modification are examples, Comprising: It is not necessarily limited to these. For example, it is possible to appropriately combine each embodiment and each modification.

  Although the embodiments of the present invention have been described in detail as described above, those skilled in the art can easily understand that many modifications can be made without departing from the novel matters and effects of the present invention. Accordingly, all such modifications are intended to be included in the scope of the present invention.

1 package, 2 lid, 3 bonding member, 4 external terminal, 5 internal electrode,
11 first semiconductor substrate, 11a active surface, 11b inactive surface, 11c side surface,
12 second semiconductor substrate, 12a main surface, 12b back surface, 12c side surface, 13 opening,
14 1st electrode, 15 2nd electrode, 16 1st insulating layer, 17 2nd insulating layer,
18 integrated circuit, 20 resin layer, 20a resin layer, 21 first resin layer, 21a upper surface,
22 second resin layer, 22a upper surface, 23 third resin layer, 28 second resin layer,
30 wiring pattern, 31 first wiring, 32 second wiring, 32a first portion,
32b second part, 40 resist layer, 50 external connection terminal,
50a stud bump, 50b solder ball, 60 first vibrator (second vibrator),
60a main surface, 60b main surface, 67 extraction electrode, 70 (70a) first structure,
80 support substrate, 80a main surface, 90 wiring substrate, 90a main surface,
91 connection terminals (third wiring), 92 wires, 93 adhesive members, 95 joint members,
100 sensor module, 110 semiconductor wafer, 110a active surface,
111 chip area, 112 effective chip area, 113 non-effective chip area,
115 first region, 116 second region, 130 adhesive sheet, 170 second structure,
180 third semiconductor substrate, 200 sensor module, 210 semiconductor wafer,
211 chip area, 212 effective chip area, 213 non-effective chip area,
215 1st area | region, 216 2nd area | region, 270 3rd structure, 280 4th structure.

Claims (12)

Resin is disposed above the first surface of the semiconductor substrate having a first integrated circuit and a first electrode and a second electrode that are located on the first surface and electrically connected to the first integrated circuit. Forming a layer;
Forming a first wiring connected to the first electrode and a second wiring connected to the second electrode on a second surface of the resin layer opposite to the first surface side; When,
Electrically connecting the first wiring and the third electrode located on the third surface of the first vibrator above the resin layer;
Dividing the semiconductor substrate without dividing the resin layer to form a first semiconductor substrate and a second semiconductor substrate;
Bending a portion of the resin layer that overlaps a region between the first semiconductor substrate and the second semiconductor substrate to form a first structure;
Preparing a wiring board having a third wiring on the fourth surface;
Mounting a surface of the first structure opposite to the first surface of the second semiconductor substrate as a connection surface, and mounting the first structure on the fourth surface of the wiring board;
Connecting the second wiring and the third wiring by wire bonding;
Including
On the first surface of the first semiconductor substrate, the first integrated circuit, the first electrode, the first wiring, the second electrode, and a part of the second wiring are located,
A method for manufacturing a sensor module, wherein a part of the second wiring extending from the first semiconductor substrate side is located on the first surface of the second semiconductor substrate. In claim 1,
In the step of forming the first structure, the resin layer is bent so that an angle formed between the third surface of the first vibrator and the fourth surface of the wiring board is a right angle. A method for manufacturing a sensor module. In claim 1,
Forming at least two of the first structures;
Before the step of mounting the first structure on the wiring board, the angle formed between the third surfaces of the first vibrators of the two first structures is a right angle. Forming a second structure in which the two first structures are arranged;
The method for manufacturing a sensor module, wherein, in the step of mounting on the wiring board, the second structure is mounted on the fourth surface of the wiring board instead of the first structure. In claim 3,
The step of forming the second structure includes:
Adhering an adhesive sheet to the fifth surface of the first semiconductor body opposite to the first surface of the first semiconductor substrate, thereby attaching the two first structures to the adhesive sheet. Fixing, and
Bending the adhesive sheet so that the angle formed by the third surface of each of the first vibrators is a right angle between the two first structures;
A method for manufacturing a sensor module. In claim 3 or 4,
The semiconductor substrate is a semiconductor wafer having a plurality of chip regions, and the first integrated circuit is formed in the chip regions,
The method of manufacturing a sensor module, wherein the second structure is formed from two adjacent chip regions among the plurality of chip regions of the semiconductor wafer. In any one of Claim 1 to 5,
Before the step of mounting the first structure on the wiring board, further comprising the step of mounting a support substrate on the fourth surface of the wiring board;
In the step of mounting the first structure on the wiring board, the first semiconductor substrate of the first structure connects a fifth surface that is continuous with the first surface and the fourth surface. A method for manufacturing a sensor module, which is mounted on the support substrate as a surface. In claim 6,
The support substrate is a third semiconductor substrate,
The third semiconductor substrate includes a second integrated circuit and a second vibrator electrically connected to the second integrated circuit,
The sensor module manufacturing method, wherein an angle formed between a main surface of the second vibrator and the third surface of the first vibrator of the second structure is a right angle. In any one of Claims 1-7,
In the step of forming the resin layer, the thickness of the first portion of the resin layer that is bent in the step of forming the first structure by bending the resin layer is the second portion of the resin layer that is not bent. A method for producing a sensor module, comprising a step of forming the film so as to be thicker than the film thickness. A first semiconductor substrate having a first integrated circuit, and a first electrode and a second electrode located on a first surface and electrically connected to the integrated circuit;
A second semiconductor substrate having a second surface arranged so that an angle formed by the first surface is a right angle;
A first resin layer located above the first surface of the first semiconductor substrate; a second resin layer located above the second surface of the second semiconductor substrate; and the first resin layer; A resin layer having a third resin layer continuous with the second resin layer;
A first wiring connected to the first electrode, located on a third surface opposite to the first surface side of the first resin layer;
A first vibrator electrically connected to the first wiring above the third surface of the first resin layer;
A first portion connected to the second electrode; and from the first portion, on the third resin layer, on the side opposite to the second surface side surface of the second resin layer A second portion having a second portion located so as to extend above the fourth surface;
A first structure including:
A wiring substrate having a fifth surface to which a surface opposite to the second surface of the second semiconductor substrate of the first structure is connected, and a third wiring located on the fifth surface; ,
A conductive wire connecting the second portion of the second wiring and the third wiring;
Have
A sensor module, wherein an angle formed between a main surface of the first vibrator and the fifth surface of the wiring board is a right angle. In claim 9,
Two adjacent first structures are located on the fifth surface of the wiring board,
Two said 1st structures are sensor modules arrange | positioned so that the angle which the main surfaces of each said 1st vibrator | oscillator form may become a right angle. In claim 9 or 10,
A support substrate is located on the fifth surface of the wiring substrate,
The first semiconductor substrate of the first structure has the support surface with a seventh surface connecting the first surface and a sixth surface opposite to the first surface as a connection surface. A sensor module located on the board. In claim 11,
The support substrate is a third semiconductor substrate,
The third semiconductor substrate includes a second integrated circuit and a second vibrator electrically connected to the second integrated circuit,
The sensor module, wherein an angle formed between a main surface of the second vibrator and the main surface of the first vibrator of the first structure is a right angle.