JP2500441B2 - Pattern formation method - Google Patents
Pattern formation methodInfo
- Publication number
- JP2500441B2 JP2500441B2 JP12029693A JP12029693A JP2500441B2 JP 2500441 B2 JP2500441 B2 JP 2500441B2 JP 12029693 A JP12029693 A JP 12029693A JP 12029693 A JP12029693 A JP 12029693A JP 2500441 B2 JP2500441 B2 JP 2500441B2
- Authority
- JP
- Japan
- Prior art keywords
- alf
- mask
- pattern
- hcl gas
- mask pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 10
- 230000007261 regionalization Effects 0.000 title claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 12
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 12
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 229910016569 AlF 3 Inorganic materials 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、固体、特に半導体の微
細構造形成のためのマスクパターン形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask pattern forming method for forming a fine structure of a solid, particularly a semiconductor.
【０００２】[0002]
【従来の技術】従来、半導体の立体構造を加工により形
成するには、一般的に、エッチングによるマスクパター
ン転写法が用いられている。この時、量子細線といった
ナノメータサイズの半導体微細構造を形成するには、や
はりナノメータサイズのマスクパターンが必要となる。
この様な微細マスクパターンを提供する方法としては、
これまでに、例えば被エッチング材料の上にマスク材料
である厚さ２０〜８０ｎｍのフッ化アルミニウム（Ａｌ
Ｆ3 ）薄膜を形成し、これに微細集束電子線を照射する
ことにより、照射部分のＡｌＦ3 を脱離させてＡｌＦ3
マスクパターンを形成する方法が知られている（ジャー
ナル・オブ・バキューム・サイエンス・インド・テクノ
ロジー・Ｂ、ｖｏｌ．４、Ｎｏ．１（１９８６）ｐｐ３
６１−３６４）。この方法により、すでに１０ｎｍ程度
の開口径を持つマスクパターン形成がなされている。2. Description of the Related Art Conventionally, a mask pattern transfer method by etching is generally used to form a three-dimensional structure of a semiconductor by processing. At this time, a nanometer-sized mask pattern is still required to form a nanometer-sized semiconductor fine structure such as a quantum wire.
As a method of providing such a fine mask pattern,
So far, for example, aluminum fluoride (Al) having a thickness of 20 to 80 nm, which is a mask material, is formed on the material to be etched.
F 3 ) A thin film is formed, and by irradiating it with a fine focused electron beam, the AlF 3 in the irradiated portion is desorbed to release AlF 3
A method for forming a mask pattern is known (Journal of Vacuum Science India Technology B, vol. 4, No. 1 (1986) pp3.
61-364). A mask pattern having an opening diameter of about 10 nm has already been formed by this method.
【０００３】[0003]
【発明が解決しようとする課題】しかし、前記の従来の
方法では、ＡｌＦ3 薄膜パターニングに要する電子ドー
ズは２０Ｃ／ｃｍ2 と非常に大きく、ＡｌＦ3 マスクパ
ターン形成に莫大な時間を要するという問題点があっ
た。この電子ドーズは、電子線による通常の有機物レジ
ストマスクのパターニングに要する電子ドーズの１０4
倍以上にもなる。However, in the above-mentioned conventional method, the electron dose required for patterning the AlF 3 thin film is as large as 20 C / cm 2, and it takes a huge amount of time to form the AlF 3 mask pattern. was there. This electron dose is 10 4 of the electron dose required for patterning a normal organic resist mask with an electron beam.
More than double.
【０００４】本発明の目的は、電子線照射による、
族化合物半導体上のＡｌＦ3 マスクパターン形成にお
いて、パターニングに必要な電子ドーズを低減し、か
つ、所望の形状のパターンの得られる、新規なマスクパ
ターニング方法を提供する事にある。An object of the present invention is to irradiate an electron beam,
An object of the present invention is to provide a novel mask patterning method capable of reducing an electron dose required for patterning in forming an AlF 3 mask pattern on a group compound semiconductor and obtaining a pattern having a desired shape.
【０００５】[0005]
【課題を解決するための手段】本発明は、３−５族化合
物半導体上にマスクとして被着させたＡｌＦ3 に電子と
塩化水素（ＨＣｌ）ガスを同時に照射することを特徴と
するマスクパターン形成方法である。According to the present invention, a mask pattern is formed by simultaneously irradiating AlF 3 deposited as a mask on a Group 3-5 compound semiconductor with electrons and hydrogen chloride (HCl) gas. Is the way.
【０００６】[0006]
【作用】ＡｌＦ3 薄膜に電子を照射すると、照射部分で
はフッ素原子が脱離して金属アルミニウム（Ａｌ）にな
る。この時、ＨＣｌガスを同時照射しない場合、この金
属Ａｌは電子線照射により非常に除去しがたいため、照
射部分のＡｌＦ3 薄膜を完全に除去してパターンを形成
するには、非常に多くの電子ドーズを要する。一方、本
発明の様に、同時にＨＣｌガスを照射する場合には、金
属Ａｌ部分がＨＣｌガスと電子線との同時照射により蒸
気圧の高いアルミニウム塩化物としてエッチング除去さ
れる。したがって、パターン形成に要する電子ドーズが
低減される。しかも、ＡｌＦ3 、３−５族化合物半導体
（ＡｌＧａＡｓ）はＨＣｌガスによりエッチングされな
いので、あるパターンを形成し、次のパターンを形成し
ている際、はじめに形成したパターン寸法がＨＣｌガス
エッチングにより広がったり、また、３−５族化合物半
導体がＨＣｌガスによりエッチングされてしまう事はな
い。When the AlF 3 thin film is irradiated with electrons, fluorine atoms are desorbed in the irradiated portion to become metallic aluminum (Al). At this time, if the HCl gas is not simultaneously irradiated, it is very difficult to remove this metallic Al by electron beam irradiation. Therefore, in order to completely remove the AlF3 thin film at the irradiated portion and form a pattern, an extremely large number of electrons are required. I need a dose. On the other hand, in the case of simultaneously irradiating with HCl gas as in the present invention, the metal Al portion is etched and removed as aluminum chloride having a high vapor pressure by simultaneous irradiation with HCl gas and an electron beam. Therefore, the electron dose required for pattern formation is reduced. Moreover, since AlF3 and 3-5 group compound semiconductor (AlGaAs) are not etched by HCl gas, when forming a certain pattern and forming the next pattern, the dimension of the pattern initially formed may be expanded by HCl gas etching. Further, the group 3-5 compound semiconductor is never etched by the HCl gas.
【０００７】[0007]
【実施例】次に、本発明によるパターン形成の一実施例
を図１を用いて説明する。図１（ａ）に示す様に、Ｇａ
Ａｓ（００１）基板１０１上に、ＡｌＦ3 薄膜１０２を
８０ｎｍ蒸着する。次に、図１（ｂ）に示すように、基
板温度を室温に保ち、１×１０-4ＴｏｒｒのＨＣｌガス
１０３雰囲気中で、運動エネルギー２０ｋｅＶ、ビーム
径１０ｎｍの集束電子線１０４をＡｌＦ3 薄膜に照射す
る。これにより、電子線とＨＣｌガスとを同時に照射し
たＡｌＦ3 部分のみが選択的にエッチング除去される。
そして、これに要する電子ドーズは、ＨＣｌガスを同時
照射しない場合に較べて１〜２桁低減される。EXAMPLE An example of pattern formation according to the present invention will be described with reference to FIG. As shown in FIG. 1A, Ga
An AlF 3 thin film 102 is vapor-deposited on an As (001) substrate 101 to a thickness of 80 nm. Next, as shown in FIG. 1B, the substrate temperature is kept at room temperature and the focused electron beam 104 having a kinetic energy of 20 keV and a beam diameter of 10 nm is applied to the AlF 3 thin film in an atmosphere of HCl gas 103 of 1 × 10 −4 Torr. To irradiate. As a result, only the AlF 3 portion irradiated with the electron beam and the HCl gas at the same time is selectively removed by etching.
The electron dose required for this is reduced by 1 to 2 digits as compared with the case where the HCl gas is not simultaneously irradiated.
【０００８】しかも、電子線照射場所を変えて、次のＡ
ｌＦ3 エッチングを行っている間、ＨＣｌガスに晒され
ている初めにエッチング開孔したＡｌＦ3 マスク部分の
形状は変化しない。また、開口部分のＧａＡｓもエッチ
ングされない。ＧａＡｓの替りにＡｌＧａＡｓ等の３−
５族化合物半導体であっても同様の効果が得られる。Furthermore, the electron beam irradiation location is changed to
During the 1F 3 etching, the shape of the AlF 3 mask portion, which was initially exposed by the exposure to HCl gas, was not changed. Also, GaAs in the opening is not etched. Instead of GaAs, AlGaAs or other 3-
Similar effects can be obtained even with a Group 5 compound semiconductor.
【０００９】[0009]
【発明の効果】本発明によると、従来より低い電子ドー
ズで容易にＡｌＦ3 マスクがパターニングできる。しか
も所望のマスクパターン加工形状が得られ、さらに、基
板のＧａＡｓやＡｌＧａＡｓはエッチングされない。し
たがって、本発明により形成したＡｌＦ3 マスクパター
ンを用いて反応性イオンビームエッチング法等により基
板のエッチングを行ったならば、所望のマスクパターン
どうりの、深さ均一性に優れた立体形状を得る事ができ
る。According to the present invention, the AlF3 mask can be easily patterned with a lower electron dose than before. Moreover, a desired mask pattern processing shape can be obtained, and GaAs and AlGaAs on the substrate are not etched. Therefore, if the substrate is etched by the reactive ion beam etching method or the like using the AlF3 mask pattern formed according to the present invention, a three-dimensional shape having a desired mask pattern and excellent depth uniformity can be obtained. You can
【図１】本発明の方法による一実施例を説明する図であ
る。FIG. 1 is a diagram illustrating an embodiment according to the method of the present invention.
１０１ ＧａＡｓ基板 １０２ ＡｌＦ3 薄膜マスク １０３ ＨＣｌガス １０４ 集束電子線101 GaAs substrate 102 AlF 3 thin film mask 103 HCl gas 104 Focused electron beam
Claims (1)
ニウムを被着し、このフッ化アルミニウムに電子と塩化
水素ガスを同時に照射する事を特徴とするパターン形成
方法。1. A pattern formation method comprising depositing aluminum fluoride on a Group 3-5 compound semiconductor and irradiating the aluminum fluoride with electrons and hydrogen chloride gas at the same time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029693A JP2500441B2 (en) | 1993-05-24 | 1993-05-24 | Pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12029693A JP2500441B2 (en) | 1993-05-24 | 1993-05-24 | Pattern formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06333890A JPH06333890A (en) | 1994-12-02 |
| JP2500441B2 true JP2500441B2 (en) | 1996-05-29 |
Family
ID=14782730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12029693A Expired - Lifetime JP2500441B2 (en) | 1993-05-24 | 1993-05-24 | Pattern formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2500441B2 (en) |
-
1993
- 1993-05-24 JP JP12029693A patent/JP2500441B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06333890A (en) | 1994-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19960116 |