JP2506064B2 - Load transducer - Google Patents
Load transducerInfo
- Publication number
- JP2506064B2 JP2506064B2 JP60065498A JP6549885A JP2506064B2 JP 2506064 B2 JP2506064 B2 JP 2506064B2 JP 60065498 A JP60065498 A JP 60065498A JP 6549885 A JP6549885 A JP 6549885A JP 2506064 B2 JP2506064 B2 JP 2506064B2
- Authority
- JP
- Japan
- Prior art keywords
- strain
- thin film
- metal
- ionized
- metals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
- G01L1/2243—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports the supports being parallelogram-shaped
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Force In General (AREA)
- Pressure Sensors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は基材上に形成した薄膜をひずみゲージとし
て用い、該基材に負荷された力、荷重等に応じて基材に
生じるひずみを上記薄膜の電気抵抗変化の形で検出する
ことによって力、荷重等を検出するようにした荷重変換
器に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention uses a thin film formed on a substrate as a strain gauge to measure the strain applied to the substrate in accordance with the force or load applied to the substrate. The present invention relates to a load converter that detects a force, a load, etc. by detecting the electric resistance change of the thin film.
従来の荷重変換器に利用されているひずみゲージは、
金属箔ゲージが一般的であり、これら従来の箔ゲージ
は、Cu−Ni,Ni−Cr等の金属間化合物で構成されている
ものが大部分である。The strain gauges used in conventional load transducers are
Metal foil gauges are generally used, and most of these conventional foil gauges are composed of intermetallic compounds such as Cu-Ni and Ni-Cr.
そして従来のこの種ひずみゲージは抵抗温度特性に対
する安定性は良いもののゲージ率が低い（Cu−Ni合金で
2.0〜2.1）という欠点がある。Although this type of conventional strain gauge has good stability against resistance temperature characteristics, it has a low gauge factor (Cu-Ni alloy
2.0-2.1) has the drawback.
また、接着形ひずみゲージの場合、使用温度条件や湿
度条件等による接着剤の選定、接着力の経時変化および
ひずみゲージに対する拘束力、つまりひずみゲージの感
度に及ぼす影響等、種々の問題を検討しなければならな
いと言う欠点がある。In addition, in the case of adhesive strain gauges, various problems such as selection of adhesives according to operating temperature conditions and humidity conditions, changes in adhesive force over time and restraint force against strain gauges, that is, influence on the sensitivity of strain gauges are examined. The drawback is that it must be.
一方、ゲージ率の高いものとして半導体ひずみゲージ
が荷重変換器に利用されつつあるが、抵抗の温度特性や
ひずみに対する抵抗値変化の直線性等、安定性に問題が
あると言う欠点がある。On the other hand, although semiconductor strain gauges are being used for load transducers with a high gauge factor, there are drawbacks in that there are problems with stability such as temperature characteristics of resistance and linearity of resistance value change with strain.
この発明は、前記従来のひずみゲージの欠点であるゲ
ージ率の低さ、抵抗温度特性及び抵抗値変化の直線性等
の問題点を解決することを技術的課題としたもので、安
定性が良くてゲージ率が高く、直線性等も良いひずみゲ
ージを用いた荷重変換器を得ることを目的としたもので
ある。This invention is a technical problem to solve the problems such as low gauge factor, which is a drawback of the conventional strain gauge, resistance temperature characteristic and linearity of resistance value change, and has good stability. It is intended to obtain a load transducer using a strain gauge having a high gauge factor and good linearity.
この発明は、ひずみゲージの材料であるCu,Ni,Cr等の
金属の二つ以上を用い、これらの複数の金属の内、少な
くともその一つをイオン化処理して、起歪体としての基
材上に直接射突させることにより、その結晶性、配向性
等の物性と組成比とを制御して、基材上に上記複数の金
属でなる薄膜を形成し、この薄膜をひずみ−電気抵抗効
果に基づいてひずみを検知するひずみ検知部として構成
したものである。This invention uses two or more metals such as Cu, Ni, and Cr, which are materials for strain gauges, and ionizes at least one of the plurality of metals to form a substrate as a flexure element. By directly impinging on it, the physical properties such as crystallinity and orientation and the composition ratio are controlled to form a thin film made of the above-mentioned plurality of metals on the base material, and the thin film is strain-electric resistance effect. It is configured as a strain detection unit that detects strain based on the.
この発明の一実施例を図面に基づいて説明する。第１
図は、電子秤の荷重変換器として一般に用いられている
ロードセルを示したもので、（１）は起歪体、（２）及
び（３）は各々固定剛体部及び可動剛体部であって、両
剛体部（２）、（３）の各上下端部は互いに長さが等し
く且つ平行な上ビーム（４）及び下ビーム（５）でもっ
て連結されている。上ビーム（４）及び下ビーム（５）
には各々２個所ずつ薄肉部のひずみ部（６）、（６）及
び（７）、（７）が設けられ、このひずみ部（６）、
（６）に各々ひずみ検知部としてのひずみゲージ
（８）、（８）及び（９）、（９）が設けられている。An embodiment of the present invention will be described with reference to the drawings. First
The figure shows a load cell generally used as a load converter of an electronic scale. (1) is a flexure element, (2) and (3) are a fixed rigid body portion and a movable rigid body portion, respectively. The upper and lower ends of both rigid body parts (2) and (3) are connected by an upper beam (4) and a lower beam (5) which have the same length and are parallel to each other. Upper beam (4) and lower beam (5)
The strained portions (6), (6) and (7), (7) each having two thin portions are provided in each of the strained portions (6),
Strain gauges (8), (8), (9), and (9) are provided in (6) as strain detectors, respectively.
これらのひずみゲージがホイーストンブリッジに接続
されて可動剛体部（３）に負荷された荷重Ｐによる起歪
体（１）のひずみを電気抵抗値の変化により検出して荷
重を検出するようにされている。These strain gauges are connected to the Wheatstone bridge, and the strain of the flexure element (1) due to the load P applied to the movable rigid body portion (3) is detected by the change of the electric resistance value to detect the load. ing.
ひずみゲージとしては、前記のように一般に接着型の
Cu−Ni合金が用いられているが、この発明では、例えば
クラスタ・イオン・ビーム法（以下ICB法と称す）でも
ってひずみゲージ材料をイオン化処理して起歪体（１）
のひずみ部（６）、（６）に例えばCu−Ni金属間化合物
の薄膜を形成し、この薄膜を更にフォトリソグラフィー
等でもって所定形状のひずみゲージを形成させるように
したものである。As mentioned above, the strain gauge is generally of the adhesive type.
Although a Cu-Ni alloy is used, in the present invention, the strain gauge material is ionized by, for example, the cluster ion beam method (hereinafter referred to as the ICB method) to generate the strain element (1).
A thin film of, for example, a Cu-Ni intermetallic compound is formed on the strained portions (6) and (6), and a strain gauge having a predetermined shape is further formed on the thin film by photolithography or the like.
ICB法とは、物質を密閉型るつぼ内に入れ、加熱して
噴射ノズルから高真空中にその蒸気を噴出させ、断熱膨
張によってクラスター（塊状原子集団）を形成させそれ
をイオン化して負電圧を印加して加速し、基材に射突さ
せ、マイグレーション効果でもって基材上に薄膜を形成
させる方法であって、この方法と装置の一例は高木らに
よってProc.2nd Int.Conf.on Ion Sources,（Viena,Aus
tria,1972）、790頁に発表されているので詳細な方法と
装置の説明は省略する。The ICB method is to put a substance in a closed crucible and heat it to eject the vapor from a jet nozzle into a high vacuum. Adiabatic expansion forms clusters (lumpy atomic groups), which are ionized to generate a negative voltage. It is a method of applying and accelerating, bombarding the base material, and forming a thin film on the base material with a migration effect.One example of this method and apparatus is Proc.2nd Int.Conf.on Ion Sources by Takagi et al. , (Viena, Aus
Tria, 1972), page 790, and detailed description of the method and apparatus is omitted.
以下、この発明の一実施例をひずみゲージを形成する
金属としてCuとNiを用い、これら金属の内、いずれか一
方または両方を上記ICB法によりイオン化させ、絶縁性
を有する基材或いは絶縁被膜を施した基材にCu−Ni金属
間化合物の薄膜を形成させ、この薄膜をひずみゲージと
して適用した荷重変換器について説明する。Hereinafter, using Cu and Ni as the metal forming the strain gauge in one embodiment of the present invention, one or both of these metals are ionized by the ICB method, and a substrate or insulating coating having an insulating property is obtained. A load transducer in which a thin film of Cu-Ni intermetallic compound is formed on the applied base material and the thin film is applied as a strain gauge will be described.
最初、Cu及びNiを各々のるつぼに入れてCuを1530℃〜
1580℃、Niを2180℃に夫々加熱し、そして各ノズルから
高真空中に噴射させてCuクラスタ及びNiクラスタを形成
させる。そして、両クラスタの内いずれか一方または両
方のクラスタをイオン化電子電流Ie＝０〜300mAでイオ
ン化し、更に加速電圧Va＝０〜5kVで加速した上、基材
の同一面上部分に両クラスタを所定時間だけ射突させ
る。そして射突したCuクラスタ及びNiクラスタはマイグ
レーション効果により薄膜のCu−Ni金属間化合物に形成
される。First, put Cu and Ni in each crucible and put Cu at 1530 ℃ ～
1580 ℃, Ni is heated to 2180 ℃, respectively, and sprayed into high vacuum from each nozzle to form Cu clusters and Ni clusters. Then, one or both of the two clusters are ionized with an ionizing electron current Ie = 0 to 300 mA, further accelerated with an acceleration voltage Va = 0 to 5 kV, and both clusters are placed on the same surface of the base material. Aim for a predetermined time. Then, the projected Cu clusters and Ni clusters are formed into a thin film Cu-Ni intermetallic compound by the migration effect.
このようにして基材に形成した薄膜を次にフォトリソ
グラフィー等でもって所定形状のひずみゲージに形成し
て荷重変換器を得る。The thin film thus formed on the substrate is then formed into a strain gauge having a predetermined shape by photolithography or the like to obtain a load converter.
上記ICB法によりカバーグラス上に形成した幅1.5mm、
長さ30mmの薄膜のひずみに対する電気抵抗変化率の試験
結果を第２図乃至第５図に示す。Width 1.5mm formed on the cover glass by the above ICB method,
The test results of the rate of change in electric resistance with respect to strain of a thin film having a length of 30 mm are shown in FIGS.
第２図はCuクラスタのみイオン化し（イオン化電子電
流）Ie＝300mA）、加速電圧Va＝0kVで作製したCu+−Ni
薄膜のひずみ−電気抵抗効果を示したもので、この場
合、従来のバルクのCu−Niや中性クラスタで作製したCu
−Ni薄膜よりもゲージ率が大きい。また、第３図はCuク
ラスタのみイオン化し（Ie＝300mA）、加速電圧Vaを0kV
から5kVまで変えて作製したCu+−Ni薄膜のひずみ−電気
抵抗効果を示したもので、加速電圧Va＝0kVでゲージ率
は最大で約25となる。さらに加速電圧を増していくと、
ゲージ率は低下する。Fig. 2 shows Cu + -Ni produced by ionizing only Cu clusters (ionizing electron current) Ie = 300mA) and accelerating voltage Va = 0kV.
The strain-electric resistance effect of the thin film is shown. In this case, Cu produced by conventional bulk Cu-Ni or neutral clusters is used.
-Gauge ratio is larger than that of Ni thin film. In addition, Fig. 3 shows that only Cu clusters are ionized (Ie = 300mA) and the acceleration voltage Va is 0kV.
Shows the strain-electrical resistance effect of Cu + -Ni thin films prepared by changing from 1 to 5 kV, and the maximum gage factor is about 25 at acceleration voltage Va = 0 kV. When the accelerating voltage is further increased,
Gauge rate will decrease.
第４図はNiクラスタのみイオン化し（Ie＝300mA）、
加速電圧Vaを0kVから5kVまで変えて作製したCu−Ni+薄
膜のひずみ−電気抵抗効果を示したもので、この場合、
加速電圧Vaに対するゲージ率の変化はVa＝1kVの時で約1
2である。Figure 4 shows that only Ni clusters are ionized (Ie = 300mA),
It shows the strain-electric resistance effect of Cu-Ni + thin film produced by changing the acceleration voltage Va from 0 kV to 5 kV.In this case,
The change of the gauge factor with respect to the acceleration voltage Va is about 1 when Va = 1kV.
Is 2.
尚、第３図及び第４図のCu−Niの組成比はいずれも約
80:20である。The composition ratio of Cu-Ni in FIGS. 3 and 4 is about
80:20.
更に第５図はCuクラスタのみイオン化し（Ie＝300m
A）、Va＝5kVで作製したCu+−Ni薄膜のひずみ−電気抵
抗効果を組成比をパラメータとして示したもので、Niの
量が少なくなるほどゲージ率が大きくなっている。Furthermore, Fig. 5 shows that only Cu clusters are ionized (Ie = 300m).
A), the strain-electric resistance effect of Cu + -Ni thin film prepared at Va = 5 kV is shown with the composition ratio as a parameter. The gauge ratio increases as the amount of Ni decreases.
一方、第６図及び第７図は、ガラス基材上にICB法に
より作製したCu−Ni薄膜の結晶性をＸ線反射回折測定に
よって調べたＸ線回折パターンの一例であって、いずれ
もイオン化電子電流Ie＝300mA、加速電圧Va＝0kV及び5k
V、Cu−Ni組成比が約80:20である。On the other hand, FIGS. 6 and 7 show an example of an X-ray diffraction pattern obtained by investigating the crystallinity of a Cu-Ni thin film prepared by the ICB method on a glass substrate by X-ray reflection diffraction measurement, and both are ionized. Electron current Ie = 300mA, acceleration voltage Va = 0kV and 5k
V, Cu-Ni composition ratio is about 80:20.
そして第６図はCuクラスタのみイオン化した場合、第
７図はNiクラスタをイオン化した場合を示しており、各
々２θ＝43.50°付近に回折ピークを持ち（111）面が優
先配向し、更に加速電圧Vaの増加により回折ピーク強度
が増大している。Fig. 6 shows the case where only Cu clusters are ionized, and Fig. 7 shows the case where Ni clusters are ionized. Each has a diffraction peak near 2θ = 43.50 °, the (111) plane is preferentially oriented, and the acceleration voltage is further increased. The diffraction peak intensity increases with the increase of Va.
このことはイオン化処理することによって結晶性や配
向性を制御出来ることを示している。This indicates that the crystallinity and orientation can be controlled by the ionization treatment.
以上のように、ICB法で作製したCu−Ni薄膜は、最大2
5位のゲージ率をもつが、イオン化電子電流の大きさ、
加速電圧の大きさ、いずれのクラスタをイオン化するか
等により、薄膜の結晶性、配向性及び組成比を自由に制
御して任意のゲージ率を有する薄膜をイオン化処理によ
って得ることができ、基材としての起歪体に所定のゲー
ジ率を有する薄膜を形成させ、更にこれをフォトリソグ
ラフィー等でもってひずみゲージを形成させることによ
ってゲージ率が高く、直線性等の性能の良い荷重変換器
を得ることができる。As described above, the Cu-Ni thin film produced by the ICB method has a maximum of 2
It has a gauge factor of 5th place, but the magnitude of the ionized electron current,
The crystallinity, orientation and composition ratio of the thin film can be freely controlled depending on the size of the accelerating voltage, which cluster is ionized, etc. to obtain a thin film having an arbitrary gauge factor by ionization treatment. By forming a thin film with a predetermined gauge factor on the strain element as shown in Fig. 1 and forming a strain gauge by photolithography etc., a load transducer with a high gauge factor and good performance such as linearity can be obtained. You can
尚、上記実施例ではICB法によりCuクラスタまたはNi
クラスタのいずれかをイオン化処理してCu−Ni薄膜を形
成させたが、両クラスタ共イオン化処理しても良いし、
ICB法以外の方法、例えばイオンビームスパッタ法でイ
オン化処理して薄膜を形成させても良い。In the above example, Cu clusters or Ni were formed by the ICB method.
Although one of the clusters was ionized to form a Cu-Ni thin film, both clusters may be ionized,
A thin film may be formed by ionization treatment by a method other than the ICB method, for example, an ion beam sputtering method.
また、Cu及びNi以外にNi及びCr等を用いて薄膜を形成
させても良い。In addition to Cu and Ni, Ni and Cr may be used to form the thin film.
更に、薄膜を形成させる金属は上記のように二種類以
外に三種類以上でも良い。Further, the metal forming the thin film may be three or more kinds other than two kinds as described above.
尚、第８図は上記の薄膜を用いた荷重変換器を示すも
ので、基材としての金属製起歪体（１）に、絶縁層（1
0）を介して一層の薄膜（11）が形成されている。この
薄膜（11）は複数の金属で形成し、その内の少なくとも
一つの金属をイオン化処理する。そしてこの薄膜（11）
を例えばフォトリソグラフィー等でもってひずみゲージ
を形成させてひずみ検知部（12）を構成する。Incidentally, FIG. 8 shows a load transducer using the above-mentioned thin film, in which an insulating layer (1
0) to form a thin film (11). This thin film (11) is formed of a plurality of metals, and at least one of the metals is ionized. And this thin film (11)
A strain gauge is formed by, for example, photolithography or the like to form a strain detecting section (12).
以上説明したように、この発明によれば、複数の金属
の内の少なくとも一つの金属をイオン化処理して、その
結晶性、配向性等の物性と組成比とを制御することによ
り、ひずみ−電気抵抗効果に基づいて高いゲージ率を有
する薄膜が得られることになり、この薄膜をひずみ検知
部として用いることによって、金属箔のひずみゲージに
比べてゲージ率が格段に高く、また、半導体ひずみゲー
ジに比べて直線性が良い等の性能の良い荷重変換器が得
られる。As described above, according to the present invention, by subjecting at least one metal of a plurality of metals to ionization treatment and controlling the physical properties such as crystallinity and orientation and the composition ratio, strain-electricity A thin film with a high gauge factor will be obtained based on the resistance effect, and by using this thin film as a strain sensing part, the gauge factor is significantly higher than that of a metal foil strain gauge, and it can be used as a semiconductor strain gauge. As a result, a load converter having good performance such as good linearity can be obtained.
また、イオン化処理条件を種々選択し、或いは複数の
金属の内、どの金属をイオン化処理するかにより種々の
ゲージ率を有し、且つ直線性等、性能の良い荷重変換器
が得られる。Further, a load converter having various gauge factors and good performance such as linearity can be obtained by variously selecting ionization treatment conditions or which metal among a plurality of metals is ionized.
また、イオン化処理によって直接、起歪体としての基
材上に薄膜を作製し、これをひずみゲージとして用いる
から従来の接着形ひずみゲージのような接着剤は不要で
あり、正確にひずみがひずみゲージに伝達されると共
に、特に金属を用いることにより、使用温度等の影響を
ほとんど受けない性能のよい荷重変換器が得られる。In addition, since a thin film is produced directly on the base material as a strain generating element by ionization treatment and this is used as a strain gauge, an adhesive such as the conventional adhesive type strain gauge is unnecessary, and the strain is accurately measured by the strain gauge. In addition to the above, the use of a metal in particular makes it possible to obtain a load converter with good performance that is hardly affected by the operating temperature and the like.
第１図は電子秤に用いられる荷重変換器の一例の斜視
図、第２図乃至第７図は、この発明においてICB法によ
りイオン化処理して作製したCu−Ni薄膜の特性を示す図
であって、第２図はCu+−Ni薄膜のひずみ−電気抵抗効
果を示す図であり、バルク形Cu−Ni及び中性Cu−Niの特
性を併記してある。第３図はCu+−Ni薄膜のひずみ−電
気抵抗効果を加速電圧をパラメータとして示す図、第４
図はCu−Ni+薄膜のひずみ−電気抵抗効果を加速電圧を
パラメータとして示す図、第５図はCu+−Ni薄膜のひず
み−電気抵抗効果をNiの組成比をパラメータとして示す
図である。また、第６図はCu+−Ni薄膜のＸ線回折パタ
ーンを示す図、第７図はCu+−Ni薄膜のＸ線回折パター
ンを示す図である。第８図はこの発明の実施例を説明す
る為のもので、薄膜をひずみ検知部として用いた荷重変
換器の図である。 １…基材（起歪体）、6,7…ひずみ部、8,9…ひずみゲー
ジ、10…絶縁層、11…薄膜、12…ひずみ検知部。FIG. 1 is a perspective view of an example of a load converter used in an electronic scale, and FIGS. 2 to 7 are views showing the characteristics of a Cu—Ni thin film produced by ionization by the ICB method in the present invention. FIG. 2 is a diagram showing the strain-electric resistance effect of the Cu + -Ni thin film, and the characteristics of bulk Cu-Ni and neutral Cu-Ni are also shown. Fig. 3 shows the strain-electrical resistance effect of Cu + -Ni thin films with acceleration voltage as a parameter.
The figure shows the strain-electrical resistance effect of the Cu-Ni + thin film with the accelerating voltage as a parameter, and FIG. 5 shows the strain-electrical resistance effect of the Cu + -Ni thin film with the Ni composition ratio as a parameter. Also, FIG. 6 is a diagram showing an X-ray diffraction pattern of Cu + -Ni film, FIG. 7 is a diagram showing an X-ray diffraction pattern of Cu + -Ni film. FIG. 8 is a view for explaining the embodiment of the present invention, and is a view of a load converter using a thin film as a strain detecting section. DESCRIPTION OF SYMBOLS 1 ... Substrate (flexible body), 6,7 ... Strained part, 8,9 ... Strain gauge, 10 ... Insulating layer, 11 ... Thin film, 12 ... Strain detection part.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宇都宮 道人 滋賀県栗太郡栗東町下鈎959番地１ 株 式会社石田衡器製作所滋賀工場内 (72)発明者 高木 俊宜 長岡京市友岡２−10―13 (72)発明者 高岡 寛 京都市右京区梅ケ畑▲槇▼尾町１番地 (56)参考文献 特開 昭51−109471（ＪＰ，Ａ) 特開 昭54−44562（ＪＰ，Ａ) 特開 昭57−172784（ＪＰ，Ａ) 特開 昭59−198767（ＪＰ，Ａ) 特公 昭54−9592（ＪＰ，Ｂ２) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Michito Utsunomiya 959 Shimoho, Ritto-cho, Kurita-gun, Shiga Prefecture 1 Shiga factory, Ishida Koki Co., Ltd. 72) Inventor Hiroshi Takaoka Umegatake, Ukyo-ku, Kyoto ▲ 1 Makiocho (56) References JP-A 51-109471 (JP, A) JP-A 54-44562 (JP, A) JP-A 57-172784 (JP, A) JP 59-198767 (JP, A) JP 54-9592 (JP, B2)
Claims (5)
イオン化処理して残りの金属と共に直接基材上に射突さ
せることにより、その組成比と物性とを制御して基材上
に上記複数の金属でなる薄膜を形成して、ひずみ−電気
抵抗効果に基づいてひずみを検知するひずみ検知部を構
成したことを特徴とする荷重変換器。1. At least one metal among a plurality of metals is ionized and directly bombarded onto the base material together with the rest of the metals to control the composition ratio and physical properties of the metal, and thereby the above-mentioned material on the base material. A load converter comprising: a thin film made of a plurality of metals; and a strain detection unit configured to detect strain based on a strain-electric resistance effect.
施された絶縁皮膜を介して行われることを特徴とする特
許請求の範囲第１項記載の荷重変換器。2. The load converter according to claim 1, wherein the metal is projected onto the base material via an insulating film formed on the surface of the base material.
して基材上に射突させて薄膜形成を行う処理であること
を特徴とする特許請求の範囲第１項記載の荷重変換器。3. The load converter according to claim 1, wherein the ionization treatment is a treatment for accelerating an ionized metal and projecting it on a substrate to form a thin film.
ことを特徴とする特許請求の範囲第１項記載の荷重変換
器。4. The load converter according to claim 1, wherein the physical properties are crystallinity and orientation of metal.
特徴とする特許請求の範囲第１項記載の荷重変換器。5. The load converter according to claim 1, wherein the metal is a plurality of metals selected from the group consisting of Cu, Ni and Cr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065498A JP2506064B2 (en) | 1985-03-28 | 1985-03-28 | Load transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60065498A JP2506064B2 (en) | 1985-03-28 | 1985-03-28 | Load transducer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29330695A Division JP2619849B2 (en) | 1995-10-17 | 1995-10-17 | Load transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61223524A JPS61223524A (en) | 1986-10-04 |
| JP2506064B2 true JP2506064B2 (en) | 1996-06-12 |
Family
ID=13288812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60065498A Expired - Lifetime JP2506064B2 (en) | 1985-03-28 | 1985-03-28 | Load transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2506064B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2619849B2 (en) | 1995-10-17 | 1997-06-11 | 株式会社イシダ | Load transducer |
| US9063036B2 (en) | 2012-07-25 | 2015-06-23 | Honda Motor Co., Ltd. | Sample for electron microscopy and method of manufacturing the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5306873A (en) * | 1990-09-26 | 1994-04-26 | Ishida Scales Mfg. Co., Ltd. | Load cell with strain gauges having low temperature dependent coefficient of resistance |
| CN101813536A (en) * | 2010-04-19 | 2010-08-25 | 南京航空航天大学 | Two-component large-load force sensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842941A (en) * | 1981-09-07 | 1983-03-12 | Toshiba Corp | Load cell |
-
1985
- 1985-03-28 JP JP60065498A patent/JP2506064B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2619849B2 (en) | 1995-10-17 | 1997-06-11 | 株式会社イシダ | Load transducer |
| US9063036B2 (en) | 2012-07-25 | 2015-06-23 | Honda Motor Co., Ltd. | Sample for electron microscopy and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61223524A (en) | 1986-10-04 |
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