JP2507059B2 - Microwave plasma source and processing equipment - Google Patents

Description

TECHNICAL FIELD The present invention relates to the case of forming a thin film of various materials on a substrate by using plasma, etching of the thin film formed on the substrate, or surface modification. Microwave plasma source used for etc., especially ECR that enables low temperature processing
The present invention relates to a plasma source using (electron cyclotron resonance). Furthermore, the present invention relates to a processing apparatus for efficiently forming a thin film on a substrate, etching, etc. using this plasma source, or for continuously forming a multilayer thin film.

2. Description of the Related Art An example of a conventional processing apparatus using a microwave plasma source will be described as a film forming apparatus. Fig. 6 shows a schematic configuration diagram of this film forming apparatus.
Shown in the figure. In this method, high-density plasma is generated using ECR, the raw material gas for film formation is decomposed, and the film is formed by a chemical vapor phase method. The microwave generated by the microwave supply means 1 passes through the waveguide 2 and the microwave introduction window 3, and then the first working gas introduction system 4 and the magnetic field generation means 5, 5 '.
Is introduced into the plasma chamber 6 in which is installed. In the plasma chamber 6, high-density plasma is formed in a portion where the ECR condition of about 875 Gauss is satisfied. This is shown in FIG.
High-density plasma is generated in the region shown by the shaded area 8 along the equal magnetic flux density line 7 of about 875 Gauss represented by the solid line. The plasma is introduced from the plasma chamber 6 along the equal magnetic flux density line 7 into the processing chamber 11 in which the second working gas introduction system 9, the vacuum exhaust system 10 and the like are installed. In the processing chamber 11, the film forming gas from the second working gas introduction system 9 is decomposed and active species are formed in the region 12 indicated by the (xx) mark. By the action of these active species, a thin film is formed on the processing substrate 14 on the substrate holder 13. When the etching gas is introduced from the second working gas introduction system 9, the processing substrate 14 is etched by the same action as in the case of the above film formation.

Next, FIG. 8 shows an example in which the above processing apparatus is applied to transport film formation for the purpose of improving the efficiency of film formation, etching, and other processes. The processing substrate 14 placed on the substrate holder 13 is transported in the direction of arrow 16 through a transport system 15 provided in the processing chamber 11 in a region where processing such as film formation and etching is performed. In this case, in order to ensure uniformity within the processing substrate 14 surface,
A slit 17 is provided near the exit of the plasma chamber 6 in the chamber 11. An example of a processing apparatus which further develops such a transfer processing apparatus and continuously and collectively performs multilayer film formation or multilayer film etching on the processing substrate 14 is shown in FIG.

Referring to FIG. 9, the case of forming a multilayer film of three kinds of materials will be described. The film formation is performed in three consecutive processing chambers 1
The processing substrate 14 is continuously conveyed through 1, 11 ′ and 11 ″ and two preparation chambers 18 and 18 ′ provided therebetween. The processing substrate 14 supplied from the loader 19.
After being processed in the processing chambers 11, 11 ', 11 "and the preparation chambers 18, 18', it is collected by the unloader 20. In order to form a multilayer film of three kinds of materials with this apparatus, the processing chamber 11 , 11 ',
Second working gas introduction system 9 installed in each of 11 ″,
Different working gases are introduced from 9 ', 9 "to form a film. Preparation is made between the processing chambers 11, 11', 11" for the purpose of eliminating the influence of mixing and interaction of these different gases. Chambers 18, 18 'are provided, the pressure inside them being set lower than in the process chambers 11, 11', 11 ".

Problems to be Solved by the Invention Problems in the above-described conventional microwave plasma source and processing apparatus will be sequentially described below.

As for the microwave plasma source, as shown in FIG. 6, the area where high-density plasma is generated is limited.
Plasma uniformity cannot be obtained. When the plasma density at the exit of the plasma chamber 6 is measured, it is as shown in FIG. 7A, and the density is high in the region satisfying the ECR conditions, but low in the other regions. FIG. 7B shows the result of measuring the film quality distribution of the thin film when the film formation was performed using the plasma having the density distribution as described above. This is the first working gas introduction system 4 from the argon gas, the second
Silane gas was introduced from the working gas introduction system 9 to form an amorphous silicon (a-Si: H) film, the optical characteristics of which were measured, and argon gas and oxygen gas were introduced from the first working gas introduction system 4. A silane gas was introduced from the second working gas introduction system 9 to form a silicon oxide (SiO ₂ ) film, and the refractive index was measured. In the vicinity of the region satisfying the ECR conditions, silane gas decomposition is effectively performed, and a thin film with good film quality is obtained. However, in other regions, the film quality is poor. As described above, in the conventional microwave plasma source, the plasma density and the non-uniformity of the quality of the formed film were one of the major problems.

The next problem is that the plasma chamber 6 needs to be a microwave resonance box, so the size of the plasma chamber 6 is limited, and it cannot be applied to film formation on a large area.

Regarding the transfer film forming apparatus, the first problem is that since the plasma density has a distribution as described above, as shown in FIG.
Results from the provision of. That is, in addition to the limitation on the plasma size as described above, the slit
Since the film forming region is further restricted by 17, it is difficult to form a film on a large area. Further, since only a small part of the active species formed by plasma can be used, the efficiency of film formation is remarkably reduced. Furthermore, active species that are not used for film formation cause film adhesion in the processing chamber 11, the slits 17 and the like, which become dust and cause a reduction in processing yield.

Next, the second problem is that if a plurality of processing chambers 11 are provided and the plurality of processing chambers 11 and the preparation chamber 18 are continuously installed when performing continuous film formation or etching of multilayer films, The device becomes very large. Therefore, a large installation area is required and, at the same time, the equipment cost is increased, resulting in an adverse effect of cost reduction of the product.

A microwave plasma source and a processing apparatus using the same according to the present invention solves the above problems and efficiently performs uniform film formation on a large area, processing such as etching, and reduces the cost of the product. The purpose is to improve the yield.

Means for Solving the Problems A microwave plasma source of the present invention is made of a hollow columnar body, has an opening portion on its peripheral surface, has a microwave introduction window on two flat surfaces at both ends, and has a first plasma forming surface. A plasma chamber provided with a working gas introduction system, a magnetic field forming means for forming a mirror magnetic field provided in the vicinity of the two planes outside the plasma chamber, and a microwave supply means provided continuously with the microwave introduction window, A plasma extraction electrode and an extraction power supply system are provided outside the plasma chamber in the vicinity of the opening, and plasma is radially formed in the circumferential direction of the plasma chamber.

Preferably, the distance between the two planes provided with the microwave introduction window of the plasma chamber is set to a multiple of the wavelength of the microwave or a length equal to the sum of the multiple and the half wavelength, and the microwave supply means provided on the two planes. Install a microwave phase adjuster.

Further, a processing apparatus using this microwave plasma source is provided in a central portion of a vacuum chamber equipped with a second working gas introduction system for introducing a processing gas for film formation, etching, etc. A microwave plasma source having a plurality of openings is provided, a second working gas introduction system is installed in each of the plurality of openings, and the same number of substrates as the number of openings correspond to the positions of the openings. Equipped with means for installation,
In order to improve processing efficiency, a loader and an unloader are provided in the vacuum chamber, and a transfer system that transfers the substrate in the vacuum chamber so as to pass through a plurality of openings of the microwave plasma source is provided in the loader and the unloader. Connected and installed to have a transfer processing function, and provided with the same number of plasma chamber openings as the number of processed films formed on the substrate, and a plurality of processing chambers radially from the central axis of the vacuum chamber. A partition is provided to form a processing chamber corresponding to each opening, a preparation chamber is formed between adjacent processing chambers, and a second working gas introducing system installed in each of the processing chambers is arranged in a substrate processing order. Correspondingly, the working gas is introduced.

Further, in order to continuously perform film formation and surface modification, a cavity partition wall composed of an electrical insulator is radially provided from the central axis in the plasma chamber, and the plasma chamber is divided into a plurality of cavities. A first working gas introduction system for plasma formation is provided in each of the chambers, an opening corresponding to each of the cavities is installed on the peripheral surface of the plasma chamber, and a plurality of processing chambers are arranged radially from the central axis of the vacuum chamber. A partition is provided to form a processing chamber corresponding to each of the openings and having a second working gas introduction system, and a preparation chamber is formed between the adjacent processing chambers.

Effect Since the microwave plasma source of the present invention can draw out uniform plasma from the plasma chamber, the uniformity of the object to be processed is good when the film-forming process, the etching process, and the like are performed using the plasma. In addition, since a large-area plasma source is realized, uniform plasma processing can be performed on a large area.

Next, the processing apparatus using this microwave plasma source realizes the efficiency of the processing, and the processing such as the continuous film formation of the multilayer film and the etching can be collectively performed. Further, in the conventional in-line type processing apparatus, a plasma source was required for each processing chamber, but in the processing apparatus of the present invention, a single plasma source can perform a plurality of processings and the plasma source is mainly used. Since the transfer system is configured in a loop, the installation area of the equipment is small and the equipment cost can be reduced.

Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic configuration diagram of a processing apparatus using a microwave plasma source according to an embodiment of the present invention, and FIG. 2 is an explanatory view of the action of a plasma chamber portion of the microwave plasma source. In addition, the same reference numerals are attached to the components common to the conventional example.

The microwave plasma source of this embodiment is composed of a hollow columnar body such as a cylinder or a polygonal column, and an opening 22 is provided on the peripheral surface thereof. 3 ', a first working gas introduction system 4 for plasma formation,
A plasma chamber 6 provided with 4 ′, magnetic field forming means 5 5 ′ provided near the two planes outside the plasma chamber 6 for forming a mirror magnetic field, and a microwave introduction window 3, 3 ′ are continuously installed. The microwave chambers 2 and 2 ′ and the microwave supplying means 1 and 1 ′, the plasma extraction electrode 23 and the extraction power supply system 24 provided in the vicinity of the opening 22 outside the plasma chamber 6, and the like. Is to form plasma radially in the circumferential direction, and the distance L between the two planes in which the microwave introduction windows 3 and 3'of the plasma chamber 6 are set is a multiple of the wavelength of the microwave or the sum of the multiple and the half wavelength. Microwave supply means 1, 1'having equal lengths and installed on two planes
The microwave phase adjuster 25 is installed in the.

The operation of this configuration is as follows. Inside the plasma chamber 6, due to the mirror magnetic field, high-density plasma having a substantially cylindrical shape is formed as in a region 8 shown in cross section in FIG. When this plasma is drawn from the upper and lower surfaces of FIG. 2 as in the conventional case, the same plasma density distribution as in the conventional case occurs, but when drawn from the circumferential direction of the plasma chamber 6, the density distribution disappears. However, since the plasma is difficult to be drawn across the magnetic flux lines, the extraction electrode 23 and the extraction power supply system 24 are installed to uniformly draw the plasma radially from the center of the plasma chamber 6. Since the plasma thus drawn out is uniform, the uniformity is excellent when the film forming and etching processes are performed using this plasma.

Next, the size of the plasma chamber 6 is largely related to the wavelength of the microwave to be introduced, which has been a problem of increasing the area in the related art, but in the present embodiment, as shown in FIG. Since the phase of the microwaves introduced from the upper and lower surfaces of 6 is controlled by the microwave phase adjuster 25, a standing wave is generated in the plasma chamber 6 so that the microwaves are sufficiently absorbed in the plasma. The length L of the plasma chamber 6 can be increased, and a large area substrate can be processed.

In this embodiment, the microwave is introduced from two planes as described above in order to prevent the microwave from being attenuated in the plasma chamber 6. However, when the attenuation in the plasma chamber 6 is small, the microwave is introduced from one plane. It may be introduced.

Next, a processing apparatus using the microwave plasma source of this embodiment will be described below. As shown in FIGS. 1 and 3, the center of a columnar vacuum chamber 21 such as a cylinder or a polygonal column provided with a second working gas introduction system 9 for introducing a processing gas such as film formation and etching. A cylindrical microwave plasma source such as a cylinder or a polygonal column having a plurality of openings 22 on the peripheral surface of the plasma chamber 6 is provided in the shaft portion, and a plurality of second working gas introduction systems 9, extraction electrodes 23, etc. are provided. It is installed in each of the openings 22 of the vacuum chamber 21 to improve the processing efficiency.
A vacuum chamber equipped with 14 loaders 19 and unloaders 20, etc.
Multiple openings 22 inside the microwave plasma source
A transport system 15 for transporting the processed substrate 14 so as to pass through is connected to a loader 19 and an unloader 20 to have a transport processing function.

With this structure, a plurality of processing regions (the number of openings 22) can be obtained from one microwave plasma source, so that the processing substrate 14 supplied from the loader 19 covers approximately 3/4 circumference of the plasma source. While passing through these processing areas, the processing speed is dramatically improved.

Although it is generally similar to the processing apparatus shown in FIG.
FIG. 4 is a schematic configuration diagram of an apparatus for forming a multilayer film made of different materials on a processing substrate 14 in an embodiment of the processing apparatus of the present invention.
Shown in the figure. This is an apparatus for forming a multi-layered film of three layers on a processing substrate 14, which has three plasma chamber openings 22 and six processing chamber partition walls radially from the central axis of the vacuum chamber 21.
26a to 26f are provided to form processing chambers 27a, 27b and 27c corresponding to the individual openings 22a, 22b and 22c and adjacent processing chambers.
A preparation chamber 28a, 28b is formed between 27a and 27b, and 27b and 27c, and a multi-layer film is formed on the second working gas introduction system 9a, 9b, 9c installed in each of the processing chambers 27a, 27b, 27c. The working gas is introduced according to the order. A preparation chamber 28c is also provided between the loader 19 and the processing chamber 27a and between the processing chamber 27c and the unloader 20. A plurality of vacuum exhaust systems 10a, 10b, 10c are attached to the preparation chambers 28a, 28b, 28c, and the degree of vacuum is set higher than that of the processing chambers 27a, 27b, 27c. It prevents mixing of different working gases introduced in.

The operation of this configuration will be described by taking the case of manufacturing a PIN diode element of silicon as an example. Argon plasma (plasma of gas supplied from the first working gas introduction system 4 shown in FIG. 1) is formed in the plasma chamber 6 of the microwave plasma source. The processing substrate 14 supplied from the loader 19 has a P layer formed in the processing chamber 27a. At this time, silane gas (SiH ₄ ) is supplied from the second working gas introduction system 9a.
A mixed gas of and diborane gas (B ₂ H ₆ ) is supplied.
These gases are decomposed by the action of argon plasma extracted from the plasma chamber 6, and a boron-doped silicon layer (P layer) is formed by the chemical vapor phase method. The processing substrate 14 on which the P layer is formed is sent to the processing chamber 27b through the preparation chamber 28a by the transfer system 15. In the processing chamber 27b, only the silane gas (SiH ₄ ) is supplied from the second working gas introduction system 9b, and the I layer of amorphous silicon is formed on the P layer by the same action as above. After that, the processing substrate 14 is sent to the final processing chamber 27c through the preparation chamber 28b. Here, a mixed gas of silane gas (SiH ₄ ) and phosphine gas (PH ₃ ) is supplied from the second working gas introduction system 9c, and a phosphorus-doped silicon layer (N layer) is formed on the P layer and the I layer. It is formed. The processed substrate 14 on which the PIN layer is formed in this way is unloader 2
Then, the multi-layer film formation is completed. As described above, in this embodiment, a single plasma source can simultaneously form a multilayer film.

Finally, one embodiment of the processing apparatus of the present invention for continuously performing film formation and surface modification will be described below with reference to FIG. In this processing apparatus, a cavity partition 29 composed of a Y-shaped electrical insulator extending radially from the central axis is provided in the plasma chamber 6 in order to perform three processes of film formation, surface treatment and film formation. As a result, the plasma chamber 6 is divided into three cavities 30a, 30b, 30c. Each of the cavities 30a, 30b, 30c has a first plasma forming
Of the working gas introduction systems 4a, 4b, 4c (not shown) and openings 22 corresponding to the cavities 30a, 30b, 30c, respectively.
A, 22b and 22c are installed on the peripheral surface of the plasma chamber 6. Further, as shown in FIG. 4, five processing chamber partition walls 26a to 26f radially installed from the central axis are provided, and three opening portions 22 are provided.
Corresponding to a, 22b, 22c, the second working gas introduction system 9a, 9b, 9
Three processing chambers 27a, 27b, 27c having c are formed, and preparation chambers 28a, 28b, 28c are formed between adjacent processing chambers.

The operation of this configuration will be described with reference to an example of manufacturing a three-layer device in which a silicon oxide thin film is formed between silicon layers. The process in which the processing substrate 14 is taken out from the loader 19 and after being processed is conveyed to the unloader 20 is the third step.
This is similar to the case shown in FIGS. First processing room 27
At a, a silicon layer is formed. In this process, argon gas is supplied to the cavity 30a from the first working gas introduction system 4a, and argon plasma is extracted from the opening 22a. With this plasma, the second working gas introduction system
Silane gas (SiH ₄ ) supplied from 9a is decomposed to form a silicon layer on the processing substrate 14. The processing substrate 14 is sent to the processing chamber 27b through the preparation chamber 28a. here,
A part (surface) of the formed silicon layer is oxidized to form a silicon oxide layer. Therefore, oxygen gas or a mixed gas of argon gas and oxygen gas is supplied from the first working gas introduction system 4b to the cavity 30b, and plasma of these gases is extracted from the opening 22b. Then, a silicon oxide layer is formed by the action of oxygen ions or oxygen radicals in the plasma. In this case, gas is not introduced from the second working gas introduction system 9b, but oxygen is supplied from the second working gas introduction system 9b due to the oxygen gas concentration in the gas supplied by the first working gas introduction system 4b. Gas may be added.

The processed substrate 14 on which the silicon oxide layer is formed is transported to the next silicon layer film forming process. That is, the processing chamber 27c
And the silicon layer is formed in the same manner as in the processing chamber 27a.

An example of the continuous formation of a multilayer film has been described with reference to FIGS. 4 and 5 by taking a film formation of three layers as an example. However, if the number of layers to be formed is large, a process of installing in the vacuum chamber 21 is performed. Room 27, preparation room
The number of installed 28 and the number of cavities 30 installed in the plasma chamber 6 may be increased. The material of the cavity partition 29 installed in the plasma chamber 6 does not have to be an insulator as long as it does not reflect the supplied microwaves.

EFFECT OF THE INVENTION The microwave plasma source and the processing apparatus of the present invention are EC
Using high density plasma by R, 1) thin film with uniform film thickness and film quality can be formed on the processed substrate, 2) uniform etching process can be performed, and 3) uniform surface treatment can be performed. In particular, there has been no large-scale processing apparatus using high-density ECR plasma in the past, but the present invention facilitates large-scale processing, and has the effect of enabling large-area substrate processing to be performed efficiently at high speed. large. In addition, since the continuous film formation and etching of the multilayer film are performed by effectively utilizing one plasma source, it is possible to reduce the size of the processing apparatus and save energy, and therefore the equipment cost and running cost. Etc. are inexpensive and, in combination with the above-mentioned improvement in processing efficiency, are highly effective in reducing the cost of products.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of a main part of a processing apparatus using a microwave plasma source according to an embodiment of the present invention, and FIG. 2 is an explanatory view of an action in a plasma chamber portion of the microwave plasma source,
FIG. 3 is an overall schematic configuration diagram of the processing apparatus, and FIGS. 4 and 5 are schematic configuration diagrams of an embodiment in which the processing apparatus shown in FIG. 3 is applied to a continuous processing apparatus for multilayer film, and FIG. FIG. 7 is a schematic configuration diagram of a processing apparatus using a conventional ECR plasma source, FIG. 7 is a film quality characteristic diagram of a thin film processed by the apparatus shown in FIG. 6, and FIG. 8 is a transfer film forming method using a conventional ECR plasma source. Schematic configuration diagram of the device,
FIG. 9 is a schematic configuration diagram of a conventional transport film forming apparatus for continuously processing a multilayer film. 1, 1 '... Microwave supply means 3, 3' ... Microwave introduction window 4, 4 '... First working gas introduction system 5,
5 '... magnetic field generating means, 6 ... plasma chamber, 9 ... second
Working gas introduction system, 10 ... vacuum exhaust system, 14 ... processing substrate, 15 ... transfer system, 21 ... vacuum chamber, 22 ... opening, 23 ... extraction electrode, 24 ... extraction power supply system, 25 ... Phase adjuster, 26a-26f ... Processing chamber partition, 27a-27c ... Processing chamber, 28a-28c ... Preparation room, 29 ... Cavity partition, 30a
~ 30c …… Cavity.

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Hideaki Yasui 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP 62-257733 (JP, A) JP HEI 2- 70063 (JP, A)

Claims (13)

(57) [Claims] 1. A plasma chamber made of a hollow columnar body, having an opening on its peripheral surface and having a microwave introducing window and a first working gas introducing system on two flat surfaces at both ends, and the plasma chamber outside the plasma chamber. Magnetic field forming means provided in the vicinity of the two planes, microwave supply means installed continuously with the microwave introduction window, plasma extraction electrode and extraction power supply system provided in the vicinity of the opening outside the plasma chamber And a microwave plasma source. 2. The microwave plasma source according to claim 1, wherein the magnetic field formed inside the plasma chamber by the magnetic field forming means provided outside the plasma chamber is a mirror magnetic field. 3. A microwave installed on the two planes, wherein the distance between the two planes provided with the microwave introduction window of the plasma chamber is set to a multiple of the wavelength of the microwave or a length equal to the sum of the multiple and the half wavelength. The microwave plasma source according to claim 1, wherein a microwave phase adjuster is installed in the supply means. 4. A microwave plasma source having a plurality of openings on the peripheral surface of the plasma chamber is provided at the center of a vacuum chamber equipped with a vacuum exhaust system and a second working gas introduction system, and a second operation is provided. A means for installing a gas introduction system in each of the plurality of openings and installing the same number of substrates as the number of openings in the vacuum chamber in correspondence with the positions of the openings. And processing equipment. 5. A plasma forming gas such as argon gas is introduced from a first working gas introducing system installed in a microwave plasma source, and a film forming gas is supplied from a second working gas introducing system installed in a vacuum chamber. The processing apparatus according to claim 4, wherein the processing apparatus is configured to be introduced to form a thin film on a substrate. 6. A plasma forming gas such as argon gas is introduced from a first working gas introducing system installed in a microwave plasma source, and an etching gas is introduced from a second working gas introducing system installed in a vacuum chamber. The processing apparatus according to claim 4, wherein the substrate is etched into a predetermined shape. 7. A microwave plasma source having a plurality of openings in a peripheral surface of a plasma chamber, in a central portion of a vacuum chamber provided with a vacuum exhaust system, a second working gas introduction system, a substrate loader and an unloader. A transfer system that transfers a substrate so as to pass through a plurality of openings of the microwave plasma source in the vacuum chamber is connected to the loader and the unloader, and the substrate is continuously processed. A processing device having the above structure. 8. The processing apparatus according to claim 7, wherein the same number of openings as the number of films processed on the substrate are provided, and a plurality of processing chamber partition walls are provided radially from the central axis of the vacuum chamber. A processing apparatus in which a processing chamber corresponding to each of the openings is formed and a preparation chamber is formed between the processing chambers adjacent to each other. 9. The processing apparatus according to claim 8, wherein a vacuum exhaust system is provided in each of the plurality of preparation chambers provided in the vacuum chamber, and the pressure of the preparation chamber is set lower than the pressure of the processing chamber. 10. The working gas is introduced into a second working gas introduction system installed in each of the plurality of processing chambers provided in the vacuum chamber in accordance with the processing order of the substrates. The processing device described. 11. The processing apparatus according to claim 7, wherein the plasma chamber is divided into a plurality of cavities by cavity partition walls radially formed from a central axis,
A first working gas introduction system for plasma formation is provided in each of these cavities, an opening corresponding to each of the cavities is provided on the peripheral surface of the plasma chamber, and a plurality of openings are provided radially from the central axis of the vacuum chamber. 2. A processing apparatus in which a processing chamber partition is provided to form a processing chamber corresponding to each of the openings and provided with a second working gas introduction system, and a preparation chamber is formed between the adjacent processing chambers. 12. The processing apparatus according to claim 11, wherein the cavity partition wall provided in the plasma chamber is made of an electrical insulator. 13. A vacuum exhaust system is provided in each of a plurality of preparatory chambers provided in a vacuum chamber, the pressure in the preparatory chamber is set lower than the pressure in the processing chamber, and the preparatory chamber is processed in accordance with the substrate processing order. A working gas is introduced from a second working gas introduction system installed in each of a plurality of processing chambers provided in the vacuum chamber and a first working gas introduction system installed in each of a plurality of cavities provided in the plasma chamber. 12. The processing apparatus according to claim 11, configured to: