JP2527580B2 - Light emitting diode array for optical printer - Google Patents
Light emitting diode array for optical printerInfo
- Publication number
- JP2527580B2 JP2527580B2 JP30051987A JP30051987A JP2527580B2 JP 2527580 B2 JP2527580 B2 JP 2527580B2 JP 30051987 A JP30051987 A JP 30051987A JP 30051987 A JP30051987 A JP 30051987A JP 2527580 B2 JP2527580 B2 JP 2527580B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- diode array
- emitting diode
- optical printer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Dot-Matrix Printers And Others (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】 イ） 産業上の利用分野 本発明はラインプリンタ等に好適な光プリンタ用発光
ダイオードアレイに関する。The present invention relates to a light emitting diode array for an optical printer suitable for a line printer and the like.
ロ） 従来の技術 近年発光ダイオードアレイを光プリンタヘッドに用い
ているが、特開昭62−242558号公報等に示される様に、
複数の発光ダイオードアレイを１列に整列させて用いて
いる。この様な発光ダイオードアレイは、光プリンタの
主走査長である200〜700mmにわたって必要とされるが、
発光ダイオードウエハの大きさ、発光特性の均一性、生
産性などの理由から通常４〜10mmの長さのものが複数個
接続して用いられ、また光プリンタの解像度と１対１に
対応する発光領域が必要とされる。(B) Conventional technology In recent years, a light emitting diode array has been used in an optical printer head. However, as disclosed in JP-A-62-242558,
A plurality of light emitting diode arrays are arranged in a row and used. Such a light emitting diode array is required over the main scanning length of an optical printer, which is 200 to 700 mm.
Due to the size of the light emitting diode wafer, the uniformity of the light emitting characteristics, the productivity, etc., usually a plurality of 4 to 10 mm lengths are connected and used, and the light emission corresponds to the resolution of the optical printer on a one-to-one basis. Area is needed.
ところが発光ダイオードアレイは、ウエハからの切り
出し部（例えばスクライブされる箇所）の近傍にある発
光領域において著しい輝度低下が生ずる。これは解像度
に対応するため発光領域が基板端縁から10〜100μｍと
いう近い位置に配置され、切断やへき開用加圧といった
加工時に加わる応力やそれによって生じる結晶歪によっ
てもれ電流路が形成されたり発光中心（再結合レベルを
つくる不純物）が減少するためと考えられる。いずれに
せよ、この様な輝度低下は印写において露光不足となり
白線となったり画像欠けとなって印写品質を著しく低下
させるので不都合である。However, in the light emitting diode array, a significant decrease in brightness occurs in the light emitting region in the vicinity of the cut-out portion (for example, a scribed portion) from the wafer. Since this corresponds to the resolution, the light emitting region is arranged at a position close to 10 to 100 μm from the edge of the substrate, and a leakage current path is formed due to the stress applied during processing such as cutting and pressing for cleavage and the crystal strain caused by it. It is considered that the emission centers (impurities that form the recombination level) are reduced. In any case, such a decrease in brightness is inconvenient because it causes insufficient exposure in printing, resulting in white lines or image defects, which significantly deteriorates the printing quality.
ハ） 発明が解決しようとする問題点 本発明は上述の点を改めるためになされたもので、印
写品質を高く維持できる光プリンタ用発光ダイオードア
レイを提供するものである。(C) Problems to be Solved by the Invention The present invention has been made in order to remedy the above-mentioned problems, and provides a light emitting diode array for an optical printer capable of maintaining high printing quality.
ニ） 問題点を解決するための手段 本発明は上述した端部発光領域において印写ドットに
対応する光放出部のなかに広いオーミック接触をもたせ
るものであり、更に、光を基板の側面からも放出させる
とともにその端縁近傍に細帯状電極を設けるものであ
る。D) Means for Solving the Problems The present invention is to provide a wide ohmic contact in the light emitting portion corresponding to the printing dot in the above-mentioned edge light emitting region, and further to allow light to be emitted from the side surface of the substrate. A strip-shaped electrode is provided in the vicinity of the edge while emitting.
ホ） 作用 これにより発光領域内の印写に直接関与する部分の直
流分布がよくなり輝度が高くなって発光ダイオードアレ
イの全体にわたって輝度バランスがよくなり、また細帯
電極を基板端縁近傍に配置することで加工ストレスを緩
和できる。(E) Action As a result, the DC distribution in the area directly related to printing in the light emitting area is improved, the brightness is increased, the brightness balance is improved over the entire light emitting diode array, and the strip electrodes are arranged near the edge of the substrate. By doing so, processing stress can be relieved.
ヘ） 実施例 第１図は本発明実施例の光プリンタ用発光ダイオード
アレイの要部斜視図で、（１）は化合物半導体からなる
基板で、例えばGaAsベース（11）上にGaAsP変成層（1
2）ｎ−GaAsP層（13）がエピタキシャル成長されてお
り、その表面には亜鉛等の選択拡散により発光領域
（２）（２′）が１列に整列して設けられている。そし
て（３）（３′）は発光領域（２）（２′）にオーミッ
ク接触がとられた個別電極で、基板（１）上に絶縁膜
（４）を介して設けられたアルミニウム蒸着層などから
なる。発光領域（２）（２′）は印写ドットに対応した
例えば四角形の光放出部（21）（21）′を基板（１）の
表面に有しており、必要に応じて遮光性マスクで縁取り
されていてもよい。（５）は基板（１）の裏面に設けら
れた共通電極である。F) Embodiment FIG. 1 is a perspective view of a main part of a light emitting diode array for an optical printer according to an embodiment of the present invention. (1) is a substrate made of a compound semiconductor, for example, a GaAsP metamorphic layer (1) on a GaAs base (11).
2) The n-GaAsP layer (13) is epitaxially grown, and light emitting regions (2) and (2 ') are arranged in a line on the surface of the n-GaAsP layer (13) by selective diffusion of zinc or the like. Further, (3) and (3 ') are individual electrodes which are in ohmic contact with the light emitting regions (2) and (2'), such as an aluminum vapor deposition layer provided on the substrate (1) via the insulating film (4). Consists of. The light emitting areas (2) and (2 ') have, for example, square light emitting portions (21) (21)' corresponding to the printing dots on the surface of the substrate (1), and if necessary, a light shielding mask is used. It may be bordered. (5) is a common electrode provided on the back surface of the substrate (1).
上述した発光領域（２）（２′）は、例えば基板
（１）の長さが6mm、光プリンタの解像度が12ドット/mm
であると、84.5μｍピッチで72個整列されており、各々
の光放出部（21）（21）′は１辺50μｍの四角形をして
いる。そして基板（１）の略中央に位置する発光領域
（２）においては光放出部（21）の外側で個別電極
（３）とオーミック接触がとられているが、発光領域の
列の端に位置する発光領域（２′）においては、光放出
部（21）′の外側および、光放出部（21）′の中に延在
する巾５μｍ程度の舌片状部（31）′において個別電極
（３）とオーミック接触がとられている。これにより略
中央部にある発光領域（２）においては四角形の一辺方
向から電流が供給されるが端部に位置する発光領域
（２）においては発光領域を縦断する中心線に沿った電
流供給路も追加され、切断加工による輝度低下を補うこ
とができる。The above-mentioned light emitting areas (2) and (2 ') have a substrate (1) length of 6 mm and an optical printer resolution of 12 dots / mm, for example.
In this case, 72 pieces are arranged at a pitch of 84.5 μm, and each light emitting part (21) (21) ′ is a quadrangle with a side of 50 μm. And, in the light emitting region (2) located substantially in the center of the substrate (1), ohmic contact is made with the individual electrode (3) outside the light emitting part (21), but at the end of the row of the light emitting region. In the light emitting region (2 '), the individual electrodes (at the outside of the light emitting portion (21)' and the tongue-like portion (31) 'having a width of about 5 μm extending into the light emitting portion (21)' ( Ohmic contact with 3). As a result, in the light emitting region (2) located in the substantially central portion, current is supplied from one side of the quadrangle, but in the light emitting region (2) located at the end portion, a current supply path along the center line longitudinally crossing the light emitting region. Is also added, and the decrease in brightness due to the cutting process can be compensated.
さらに第２図に示すように、発光領域（20）の光放出
部（210）における各々の輝度分布が均一化するように
全ての光放出部（210）において個別電極（30）の舌片
部（310）を設け、この舌片部（310）の下方、もしくは
下方の一部でのみオーミック接触をとることもあるが、
この場合、列の端部に位置する発光領域（20）′の光放
出部▲（21′ ０）▼においてそのオーミック接触面積を
大きくし、より好ましくは舌片部▲（31′ ０）▼から発
光領域に最も近い基板（10）の端縁（140）向うヒゲ状
電極▲（32′ ０）▼を設けこのヒゲ状電極▲（32′ ０）
においてもオーミック接触を行えばよい。Further, as shown in FIG. 2, the tongue pieces of the individual electrodes (30) are provided in all the light emitting parts (210) so that the respective brightness distributions in the light emitting parts (210) of the light emitting region (20) are made uniform. (310) is provided, and ohmic contact may be made only under the tongue (310) or only a part of the lower part.
In this case, the ohmic contact area is increased in the light emitting portion (21 ' 0 ) ▼ of the light emitting region (20)' located at the end of the row, more preferably from the tongue portion ▲ (31 ' 0 ) ▼. edge of the substrate nearest to the light-emitting region (10) (140) toward whisker electrode ▲ (32 '0) ▼ the arranged this whiskers electrode ▲ (32' 0)
Also in, ohmic contact may be performed.
第３図（ａ）（ｂ）はさらに他の実施例を示してお
り、基板（100）の略中央部に位置する発光領域（200）
と個別電極（300）は第２図に示したものと同じであ
る。特徴は列の端部に位置する発光領域（600）が基板
（100）の側面（1500）にも露出し、個別電極（700）
は、その発光領域（600）の光放出部（610）と略等しい
長さを有し基板（100）の端縁（1400）近傍に前記側面
（1500）に沿って設けられた細帯状部（730）を有して
いることである。そしてオーミック接触は個別電極（70
0）の舌片部（710）の１部と細帯状部（730）全面でと
られている。この細帯状部（730）は例えば巾３〜10μ
ｍ長さ55μｍで、充分のオーミック接触面積が得られる
場合には舌片部（710）をなくしてもよい。このような
光放出部（610）における発光輝度特性（ニヤパター
ン）は第３図（Ｃ）に示す様に基板（100）の端縁（140
0）側の輝度が充分に補償されている。これは上述した
電流分布の改良のほか、加工時、（特にスクライブ、へ
き開）の応力が細帯状部（730）によって緩和され結晶
歪の発生が少なくなっていることにも因る。この様な細
帯状部（730）はウエハの切断部にまたがって設けら
れ、従って基板（100）の端縁（1400）に位置するのが
好ましいが、数μｍ程度ならば端縁（1400）から離れて
平行に設けられていてもよい。FIGS. 3 (a) and 3 (b) show still another embodiment, in which the light emitting region (200) located at the substantially central portion of the substrate (100).
The individual electrodes (300) are the same as those shown in FIG. The feature is that the light emitting area (600) located at the end of the row is also exposed on the side surface (1500) of the substrate (100), and the individual electrode (700).
Has a length substantially equal to that of the light emitting portion (610) of the light emitting region (600) and is provided near the edge (1400) of the substrate (100) along the side surface (1500). 730). And the ohmic contact is the individual electrode (70
Part of the tongue piece (710) of (0) and the entire surface of the strip-shaped portion (730). This narrow strip (730) has a width of 3 to 10 μ, for example.
The tongue portion (710) may be eliminated if a sufficient ohmic contact area is obtained with a length of 55 μm. The light emission luminance characteristic (near pattern) in the light emitting portion (610) is as shown in FIG. 3 (C).
The brightness on the 0) side is sufficiently compensated. This is because, in addition to the above-mentioned improvement of the current distribution, the stress of (in particular, scribe and cleavage) is relaxed by the thin strip portion (730) during processing, and the occurrence of crystal strain is reduced. Such a strip-shaped portion (730) is provided so as to extend over the cut portion of the wafer and is therefore preferably located at the edge (1400) of the substrate (100). It may be provided separately in parallel.
ト） 発明の効果 以上の如くにより発光ダイオードアレイの全体にわた
って、即ち端部発光領域も含めて、発光領域の輝度特性
を高く略均一にそろえることができるので、この発光ダ
イオードアレイを用いた光プリンタにおいては良好な印
写品質を得ることができる。G) Effects of the Invention As described above, since the luminance characteristics of the light emitting area can be made high and substantially uniform over the entire light emitting diode array, that is, including the edge light emitting area, an optical printer using this light emitting diode array. In, good print quality can be obtained.
第１図は本発明実施例の光プリンタ用発光ダイオードア
レイの要部斜視図、第２図は他の実施例に係る発光ダイ
オードアレイの平面図、第３図はさらに他の実施例に係
る発光ダイオードアレイの要部平面図（ａ）とその側面
断面図（ｂ）と端部発光領域の輝度特性図（ｃ）であ
る。 （１）（10）（100）……（化合物半導体の）基板、
（２）（20）（200）……発光領域、（３）（30）（30
0）……個別電極、（５）（500）……共通電極。FIG. 1 is a perspective view of a main part of a light emitting diode array for an optical printer according to an embodiment of the present invention, FIG. 2 is a plan view of a light emitting diode array according to another embodiment, and FIG. 3 is a light emission according to still another embodiment. FIG. 3 is a plan view (a) of a main part of the diode array, a side sectional view (b) thereof, and a luminance characteristic view (c) of an edge light emitting region. (1) (10) (100) …… (compound semiconductor) substrate,
(2) (20) (200) …… Emitting area, (3) (30) (30
0) …… Individual electrodes, (5) (500) …… Common electrodes.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−242912（ＪＰ，Ａ) 実開 昭61−157350（ＪＰ，Ｕ) 実公 平４−36278（ＪＰ，Ｙ２) 実公 平４−36280（ＪＰ，Ｙ２) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-62-242912 (JP, A) Actual development 61-157350 (JP, U) Actual public 4-36278 (JP, Y2) Actual public 4- 36280 (JP, Y2)
Claims (2)
られ、印写ドットに対応する光放出部を有した複数の発
光領域と、該発光領域の各々にオーミック接触された個
別電極とを具備した光プリンタ用発光ダイオードアレイ
において、前記発光領域のうち整列の端部に位置する発
光領域の光放出部には列の略中央に位置する発光領域の
光放出部におけるオーミック接触面積よりも広いオーミ
ック接触面積を有するように個別電極が設けられている
事を特徴とする光プリンタ用発光ダイオードアレイ。1. A plurality of light emitting regions provided in alignment with a surface of a compound semiconductor substrate and having light emitting portions corresponding to printing dots, and individual electrodes ohmic-contacting each of the light emitting regions. In the provided light emitting diode array for an optical printer, the light emitting portion of the light emitting area located at the end of the alignment of the light emitting area is wider than the ohmic contact area of the light emitting area of the light emitting area located substantially in the center of the row. A light-emitting diode array for an optical printer, wherein individual electrodes are provided so as to have an ohmic contact area.
光領域は基板の側面からも光放出を行い、前記個別電極
はその発光領域の光放出部と略等しい長さを有し基板の
端縁近傍に前記側面に沿って設けられた細帯状部を有し
ている事を特徴とする特許請求の範囲第１項記載の光プ
リンタ用発光ダイオードアレイ。2. A light emitting region located at the end of a row of the light emitting regions also emits light from the side surface of the substrate, and the individual electrode has a length substantially equal to the light emitting portion of the light emitting region. The light emitting diode array for an optical printer according to claim 1, further comprising a narrow strip portion provided along the side surface in the vicinity of an edge of the light emitting diode array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30051987A JP2527580B2 (en) | 1987-11-27 | 1987-11-27 | Light emitting diode array for optical printer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30051987A JP2527580B2 (en) | 1987-11-27 | 1987-11-27 | Light emitting diode array for optical printer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01141068A JPH01141068A (en) | 1989-06-02 |
| JP2527580B2 true JP2527580B2 (en) | 1996-08-28 |
Family
ID=17885797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30051987A Expired - Lifetime JP2527580B2 (en) | 1987-11-27 | 1987-11-27 | Light emitting diode array for optical printer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2527580B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07113707B2 (en) * | 1986-04-14 | 1995-12-06 | 日本電気株式会社 | Printer head |
-
1987
- 1987-11-27 JP JP30051987A patent/JP2527580B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01141068A (en) | 1989-06-02 |
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