JP2549334B2 - Optical isolator - Google Patents
Optical isolatorInfo
- Publication number
- JP2549334B2 JP2549334B2 JP4095230A JP9523092A JP2549334B2 JP 2549334 B2 JP2549334 B2 JP 2549334B2 JP 4095230 A JP4095230 A JP 4095230A JP 9523092 A JP9523092 A JP 9523092A JP 2549334 B2 JP2549334 B2 JP 2549334B2
- Authority
- JP
- Japan
- Prior art keywords
- optical isolator
- equation
- extinction ratio
- analyzer
- faraday rotator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【0001】[0001]
【産業上の利用分野】本発明は波長0.6〜0.8[μ
m]の帯域内で使用される光アイソレータに関する。BACKGROUND OF THE INVENTION The present invention has a wavelength of 0.6 to 0.8 [μ
m] for an optical isolator used in the band.
【0002】[0002]
【従来の技術】従来、例えば光通信,光計測,光磁気デ
ィスク等の光学的装置(システム)の光源には、上述し
た波長0.6〜0.8[μm]の帯域の半導体レーザや
ガスレーザが使用されることが多い。ところで、こうし
たレーザからの出射光はその一部がレーザ自体に帰還さ
れて、波長の揺らぎやノイズを生じる為、こうした光源
への戻り光のノイズ除去を行う光アイソレータが実用化
されている。2. Description of the Related Art Conventionally, as a light source of an optical device (system) such as optical communication, optical measurement, magneto-optical disk, etc., a semiconductor laser or a gas laser having a wavelength of 0.6 to 0.8 [μm] described above is used. Are often used. By the way, a part of the light emitted from such a laser is returned to the laser itself to generate wavelength fluctuation and noise. Therefore, an optical isolator for removing the noise of the returned light to such a light source has been put into practical use.
【0003】このファラデー回転子の材料には一般式C
d1-x Mnx Te(但し、0<x≦1)で示される半磁
性半導体の使用が提案されている。The material of this Faraday rotator has the general formula C
It has been proposed to use a semi-magnetic semiconductor represented by d 1-x Mn x Te (where 0 <x ≦ 1).
【0004】一般に半磁性半導体Cd1-x Mnx Teの
0<x≦0.7の範囲内にあるカドミウム・マンガン・
テルル結晶は、ブリッジマン法と呼ばれる製造方法によ
って液相から凝固されて得られる。このとき、六方晶ウ
ルツ鉱型構造から立方晶閃亜鉛鉱構造への相転移に起因
する双晶欠陥が発生し、この双晶欠陥が双晶面((11
1)面)の重った方向の格子列<111>について一軸
性の光学異方性を生じさせる。従って、光アイソレータ
のファラデー回転子としてこの結晶を用いる場合、(1
11)面に垂直に光を入射させることが有利となる。In general, the semi-magnetic semiconductor Cd 1-x Mn x Te has a cadmium-manganese content within the range of 0 <x ≦ 0.7.
Tellurium crystals are obtained by solidifying from a liquid phase by a manufacturing method called Bridgman method. At this time, twin defects are generated due to the phase transition from the hexagonal wurtzite structure to the cubic zinc blende structure, and the twin defects are caused by twin planes ((11
1) A uniaxial optical anisotropy is generated in the lattice row <111> in the direction in which the planes) overlap. Therefore, when this crystal is used as a Faraday rotator for an optical isolator, (1
11) It is advantageous to make the light incident perpendicular to the plane.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、ブリッ
ジマン法によりカドミウム・マンガン・テルル結晶を製
造する場合、実際には結晶育成中の融液界面の揺らぎに
よる組成変動により、歩留りが低下してしまうという問
題がある。組成変動したカドミウム・マンガン・テルル
結晶は残留応力を有するので、(111)面を用いても
実用上充分な消光比を得られないことが多くなってしま
う。However, in the case of producing a cadmium-manganese-tellurium crystal by the Bridgman method, in reality, the yield decreases due to the composition fluctuation due to the fluctuation of the melt interface during crystal growth. There's a problem. Since the cadmium-manganese-tellurium crystal having a varied composition has a residual stress, even if the (111) plane is used, a practically sufficient extinction ratio often cannot be obtained.
【0006】そこで、本発明の技術的課題は、ブリッジ
マン法により製造されるファラデー回転子の消光比を確
保することにより、ファラデー回転子の歩留りを向上さ
せ、高性能な光アイソレータを安価に提供することにあ
る。Therefore, the technical problem of the present invention is to improve the yield of the Faraday rotator by securing the extinction ratio of the Faraday rotator manufactured by the Bridgman method, and to provide a high-performance optical isolator at a low cost. To do.
【0007】[0007]
【課題を解決するための手段】本発明によれば、ブリッ
ジマン法で作製され、一般式Cd1-x Mnx Te(但
し、0<x≦0.7)で示されるカドミウム・マンガン
・テルル結晶の双晶面((111)面に同じ)を光学面
とする磁気光学素子をファラデー回転角θF [度]のフ
ァラデー回転子とし、該ファラデー回転子を介して偏光
子及び検光子を対向配置させた光アイソレータにおい
て、偏光子及び検光子の偏光方向は、誘電率テンソルの
(111)面内に存在する2つの直交する固有ベクトル
の何れか一方に対して、該偏光子の偏光方向はθF /2
[度]傾斜し、該検光子の偏光方向は(90−θF /
2)[度]傾斜したものであり、且つ戻り光のファラデ
ー回転は固有ベクトルを挟んで−θF /2からθF /2
の領域で生じる光アイソレータが得られる。According to the present invention, cadmium manganese tellurium produced by the Bridgman method and represented by the general formula Cd 1-x Mn x Te (where 0 <x ≦ 0.7) is used. A magneto-optical element having a twin plane of the crystal (the same as the (111) plane) as an optical surface is used as a Faraday rotator with a Faraday rotation angle θ F [degree], and the polarizer and the analyzer face each other through the Faraday rotator. In the arranged optical isolator, the polarization directions of the polarizer and the analyzer are θ with respect to either one of two orthogonal eigenvectors existing in the (111) plane of the dielectric constant tensor. F / 2
[Degrees] inclined, and the polarization direction of the analyzer is (90−θ F /
2) It is tilted by [degrees], and the Faraday rotation of the return light is -θ F / 2 to θ F / 2 across the eigenvector.
It is possible to obtain an optical isolator that occurs in the region of.
【0008】[0008]
【実施例】以下に実施例を挙げ、本発明の光アイソレー
タについて図面を参照して詳細に説明する。図1はブリ
ッジマン法により製造された一般式Cd1-x Mnx Te
(但し、0<x≦0.7)で示されるカドミウム・マン
ガン・テルル結晶のインゴット1の方位を示したもので
ある。このインゴット1は、光アイソレータの磁気光学
素子(ファラデー回転子)として備えられるもので、そ
の結晶の成長方位はほぼ次式(数1)になっている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The optical isolator according to the present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 shows the general formula Cd 1-x Mn x Te produced by the Bridgman method.
(However, 0 <x ≦ 0.7), the orientation of the ingot 1 of the cadmium-manganese-tellurium crystal is shown. The ingot 1 is provided as a magneto-optical element (Faraday rotator) of an optical isolator, and its crystal growth direction is approximately given by the following equation (Equation 1).
【0009】[0009]
【数1】 [Equation 1]
【0010】又、インゴット1は、<1−11>方向の
寸法が約60mmであり、(111)面(双晶面S)
は、インゴット1を縦切りにして取り出される。The ingot 1 has a dimension in the <1-11> direction of about 60 mm and has a (111) plane (twin plane S).
Is taken out by vertically cutting the ingot 1.
【0011】図2はインゴット1の(111)面に光を
垂直入射させて電場ベクトルの振動面を面内で回転さ
せ、磁場を印加しない状態で消光比Iを測定した消光比
Iの入射光の偏光ベクトルの方向依存性を示したもので
ある。ここで消光比Iは実験的に次式(数2)で示され
る。FIG. 2 shows incident light having an extinction ratio I obtained by measuring the extinction ratio I without applying a magnetic field by vertically injecting light into the (111) plane of the ingot 1 to rotate the oscillation plane of the electric field vector in the plane. 3 shows the direction dependence of the polarization vector of. Here, the extinction ratio I is experimentally shown by the following equation (Equation 2).
【0012】[0012]
【数2】 [Equation 2]
【0013】尚、消光比IはI=(直交ニコルでの光透
過率)/(平行ニコルでの光透過率)で定義されてい
る。数2式で消光比Iが最小となるθ=π/2n(nは
整数)の消光軸の方向は<1−10>,<−1−12>
であり、このうち<1−10>は結晶成長方位と一致し
ている。これにより、<111>軸方向については光学
的に完全な等方ではなく、複屈折を生じていると考えら
れる。ここでの誘電率テンソルは次式(数3)で示され
る。The extinction ratio I is defined by I = (light transmittance in orthogonal Nicols) / (light transmittance in parallel Nicols). The extinction axis of θ = π / 2n (n is an integer) that minimizes the extinction ratio I in Equation 2 is <1-10>, <-1-12>.
Of these, <1-10> coincides with the crystal growth orientation. As a result, it is considered that birefringence is generated in the <111> axis direction instead of being optically isotropic. The dielectric constant tensor here is shown by the following equation (Equation 3).
【0014】[0014]
【数3】 (Equation 3)
【0015】又、この場合の固有ベクトルは<111
>,<1−10>,<−1−12>である。このような
結果は、本発明により実験的に見い出された事実であ
る。The eigenvector in this case is <111.
>, <1-10>, <-1-12>. Such a result is a fact experimentally found by the present invention.
【0016】そこで、複屈折を有する結晶の誘電率テン
ソルの固有ベクトルの何れかに平行に磁場を印加し、フ
ァラデー配置で直線偏光を入射させたときのマックスウ
エル方程式を解くと、消光比Iは次式(数4)に示すよ
うになる。Then, when a magnetic field is applied in parallel to any of the eigenvectors of the dielectric constant tensor of a crystal having birefringence and linearly polarized light is made incident in the Faraday arrangement, the extinction ratio I is It becomes as shown in Formula (Formula 4).
【0017】[0017]
【数4】 [Equation 4]
【0018】但し、ここではε=(n0 Δn)/ε1 で
定義され、n0 は屈折率,Δnは複屈折,ε1 は印加磁
場に比例する誘電率テンソルの非対角成分を表わす。
又、θF はファラデー回転角,θは入射光の偏光ベクト
ルと磁場に垂直な固有ベクトルとの成角を表わすものと
する。この数4式は、消光比Iを磁場Hの逆数H-1で展
開し、最低次の項を求めたもので、本発明により見い出
されたものである。数4式によれば、θ=−θF /2+
90°n(nは整数)においてI=I0 となるので、複
屈折の影響は現れないことが判かる。However, here, ε = (n 0 Δn) / ε 1 is defined, where n 0 is the refractive index, Δn is the birefringence, and ε 1 is the non-diagonal component of the dielectric constant tensor proportional to the applied magnetic field. .
Further, θ F represents the Faraday rotation angle, and θ represents the angle between the polarization vector of the incident light and the eigenvector perpendicular to the magnetic field. The equation (4) is obtained by expanding the extinction ratio I with the reciprocal H −1 of the magnetic field H to find the lowest order term, and is found by the present invention. According to the equation 4, θ = −θ F / 2 +
Since I = I 0 at 90 ° n (n is an integer), it can be seen that the influence of birefringence does not appear.
【0019】従って、このような数4式に基づいてイン
ゴット1(カドミウム・マンガン・テルル結晶)をファ
ラデー回転子とし、このファラデー回転子を介して以下
に詳述する設置条件で偏光子及び検光子を対向配置させ
ると、ファラデー回転子の消光比が充分に確保された光
アイソレータを構成することができる。即ち、このよう
な光アイソレータにおいては、誘電率テンソルの(11
1)面内に存在する2つの直交する固有ベクトルの何れ
か一方に対して、偏光子をθ=θF /2,検光子をθ=
(90°−θF /2)の方向に設定したときに戻り光の
逆方向損失を最大にすることができる。Therefore, the ingot 1 (cadmium-manganese-tellurium crystal) is used as a Faraday rotator based on the equation (4), and the polarizer and the analyzer are installed through the Faraday rotator under the following installation conditions. By arranging the two to face each other, an optical isolator in which the extinction ratio of the Faraday rotator is sufficiently secured can be constructed. That is, in such an optical isolator, the dielectric constant tensor (11
1) For one of the two orthogonal eigenvectors existing in the plane, the polarizer is θ = θ F / 2, and the analyzer is θ =
The backward loss of the returning light can be maximized when the direction is set to (90 ° −θ F / 2).
【0020】図3は偏光子と検光子との配置を示したも
のである。但し、ここではファラデー回転角θF の符号
を正としている。従来の光アイソレータではθを任意に
設定しているので、そのような設定では数4式によって
も複数屈折の影響により消光比Iが劣化されることがあ
る。FIG. 3 shows the arrangement of the polarizer and the analyzer. However, the sign of the Faraday rotation angle θ F is positive here. Since θ is set arbitrarily in the conventional optical isolator, the extinction ratio I may be deteriorated due to the influence of plural refractions even in such a setting by the equation (4).
【0021】ところで、本発明の光アイソレータでは、
双晶面S内に複屈折が存在するという実験的事実と、マ
スクウエル方程式から導いた公式とに基づいて数4式を
見い出して偏光子及び検光子を対向配置させているの
で、通常の光アイソレータのようにθF =45°とし、
厚さ出し等のミスによりθF が45°から数度ずれるよ
うな場合を想定しても、偏光子をθF /2傾けることで
一般的なファラデー回転角θF [度]に基づく使用を図
り得る。By the way, in the optical isolator of the present invention,
Based on the experimental fact that birefringence exists in the twin plane S and the formula derived from the Muskwell equation, the equation (4) is found and the polarizer and the analyzer are arranged to face each other. Set θ F = 45 ° like an isolator,
Even if θ F deviates from 45 ° by a few degrees due to a mistake in thickness, etc., by tilting the polarizer by θ F / 2, use it based on the general Faraday rotation angle θ F [degree]. It can be planned.
【0022】以下は本発明の光アイソレータを具体的に
説明する。The optical isolator of the present invention will be specifically described below.
【0023】最初にブリッジマン法により組成Cd1-x
Mnx Te(x=0.05,0.45)単結晶を育成
し、(111)面に光学研磨,無反射コートを施して消
光比Iを測定した。但し、x=0.05のものは波長
0.83μm,x=0.45のものは波長0.633μ
mで評価した。又、電場ベクトルの振動方向を面内でθ
だけ回転させて(但し、θ=0の基準は<−1−12>
方向と定義する)磁場を印加せずに消光比Iを測定する
と、消光比Iは上述した如く、図2に示される方位依存
性を示した。First, the composition Cd 1-x was obtained by the Bridgman method.
An extinction ratio I was measured by growing a Mn x Te (x = 0.05, 0.45) single crystal, optical polishing and antireflection coating on the (111) plane. However, x = 0.05 has a wavelength of 0.83 μm, and x = 0.45 has a wavelength of 0.633 μm.
It was evaluated by m. Also, the vibration direction of the electric field vector is θ in the plane.
Rotate (However, the standard of θ = 0 is <-1-12>
When the extinction ratio I was measured without applying a magnetic field (defined as the direction), the extinction ratio I showed the orientation dependence shown in FIG. 2 as described above.
【0024】次に、次式(数5)を用いた。Next, the following equation (Equation 5) was used.
【0025】[0025]
【数5】 (Equation 5)
【0026】但し、ここでλ=波長,d=結晶の厚さ,
Δn=複屈折であり、この数5式からΔnを求め、この
Δnを上述した数4式の幾何変形式である次式(数6)
のΔnに代入して理論式を得た。Where λ = wavelength, d = crystal thickness,
Δn = birefringence, Δn is obtained from this equation 5, and this Δn is the following equation (Equation 6), which is a geometric transformation equation of the above equation 4.
To obtain a theoretical formula.
【0027】[0027]
【数6】 (Equation 6)
【0028】更に、表1に示す如く磁場H[kOe]を
印加しない場合の消光比I(そのθ依存性及びΔn)
と、表2に示す如く実際に磁場H[kOe]を印加した
場合の消光比I(その実験値及び理論値)とをそれぞれ
測定した。尚、表2(A)は組成x=0.05のもの
で、表2(B)は組成x=0.45のものである。Further, as shown in Table 1, the extinction ratio I (its θ dependence and Δn) when the magnetic field H [kOe] is not applied.
And the extinction ratio I (the experimental value and the theoretical value thereof) when the magnetic field H [kOe] was actually applied as shown in Table 2 were measured. In Table 2 (A), the composition x = 0.05, and in Table 2 (B), the composition x = 0.45.
【0029】[0029]
【表1】 [Table 1]
【0030】[0030]
【表2】 [Table 2]
【0031】この結果、x=0.05,x=0.45共
に実験値と理論値とは優れて一致しており、θ=(−θ
F /2+90n)[度]において消光比Iは最小になっ
た。通常の光アイソレータ(θF =45°)の場合、θ
を任意にすると消光比I(θ)がθによって実用値1.
0×10-3(30dB)よりも大きくなるが、本発明の
光アイソレータが備えるファラデー回転子の場合、消光
比I(θ)をI<1.0×10-3にできることが判っ
た。As a result, both the experimental value and the theoretical value of x = 0.05 and x = 0.45 are in excellent agreement, and θ = (− θ
The extinction ratio I was minimized at F / 2 + 90n) [degrees]. In the case of a normal optical isolator (θ F = 45 °), θ
When the extinction ratio I (θ) is set to an arbitrary value, the practical value 1.
Although it is larger than 0 × 10 −3 (30 dB), it has been found that the extinction ratio I (θ) can be set to I <1.0 × 10 −3 in the case of the Faraday rotator included in the optical isolator of the present invention.
【0032】又、本発明の光アイソレータは、偏光子を
θ=θF /2の方向、検光子をθ=(90°−θF /
2)の方向にそれぞれ設置しているが、これらの両組成
共にアイソレーションが30dB以上となることが確認
された。因みに、通常の光アイソレータの如くθ=0で
戻り光が入射するように偏光子及び検光子を設置する
と、アイソレーションが28dBとなり、実用値には致
らないことが判った。Further, in the optical isolator of the present invention, the polarizer is in the direction of θ = θ F / 2, and the analyzer is in the direction of θ = (90 ° −θ F /
Although they were installed in the direction of 2), respectively, it was confirmed that the isolation was 30 dB or more for both compositions. By the way, it was found that when a polarizer and an analyzer were installed so that the return light would be incident at θ = 0 as in an ordinary optical isolator, the isolation would be 28 dB, which was not a practical value.
【0033】このように、本発明の光アイソレータは、
ファラデー回転子の消光比が充分に確保されるので、フ
ァラデー回転子を製造する工程での歩留りを向上させ、
結果的に高性能な光アイソレータを効率良く製造するこ
とができる。As described above, the optical isolator of the present invention is
Since the extinction ratio of the Faraday rotator is sufficiently secured, the yield in the process of manufacturing the Faraday rotator is improved,
As a result, a high performance optical isolator can be efficiently manufactured.
【0034】[0034]
【発明の効果】以上に述べた通り、本発明によれば、カ
ドミウム・マンガン・テルル結晶の双晶面である(11
1)面を光学面とするファラデー回転子の消光比が改善
されるので、ファラデー回転子の製造工程における歩留
りの向上を図ることができる。これにより、ファラデー
回転子を使用した高性能な光アイソレータを効率良く安
価に製造できるようになる。As described above, according to the present invention, it is a twin plane of a cadmium-manganese-tellurium crystal (11
1) Since the extinction ratio of the Faraday rotator whose surface is the optical surface is improved, it is possible to improve the yield in the manufacturing process of the Faraday rotator. As a result, a high-performance optical isolator using a Faraday rotator can be efficiently manufactured at low cost.
【図1】本発明の光アイソレータに備えられ、ブリッジ
マン法により製造されたカドミウム・マンガン・テルル
結晶(ファラデー回転子)のインゴットの方位を示した
ものである。FIG. 1 shows an orientation of an ingot of a cadmium-manganese-tellurium crystal (Faraday rotator) which is provided in the optical isolator of the present invention and manufactured by the Bridgman method.
【図2】本発明の光アイソレータに係る製造過程におい
て、磁場を印加せずに測定したカドミウム・マンガン・
テルル結晶における双晶面内の消光比の入射光の偏光ベ
クトルの方向依存性を示したものである。FIG. 2 is a diagram showing a manufacturing process of the optical isolator according to the present invention, which is measured without applying a magnetic field.
It shows the dependence of the extinction ratio in the twin plane in the tellurium crystal on the direction of the polarization vector of the incident light.
【図3】本発明の光アイソレータに備えられる偏光子及
び検光子の配置を示したものである。FIG. 3 shows an arrangement of a polarizer and an analyzer included in the optical isolator of the present invention.
1 インゴット(カドミウム・マンガン・テルル結晶の
ファラデー回転子) S 双晶面1 Ingot (Faraday rotator of cadmium-manganese-tellurium crystal) S twin plane
Claims (1)
1-x Mnx Te(但し、0<x≦0.7)で示されるカ
ドミウム・マンガン・テルル結晶の双晶面((111)
面に同じ)を光学面とする磁気光学素子をファラデー回
転角θF [度]のファラデー回転子とし、該ファラデー
回転子を介して偏光子及び検光子を対向配置させた光ア
イソレータにおいて、前記偏光子及び前記検光子の偏光
方向は、誘電率テンソルの(111)面内に存在する2
つの直交する固有ベクトルの何れか一方に対して、該偏
光子の偏光方向はθF /2[度]傾斜し、該検光子の偏
光方向は(90−θF /2)[度]傾斜したものであ
り、且つ戻り光のファラデー回転は前記固有ベクトルを
挟んで−θF /2からθF /2の領域で生じることを特
徴とする光アイソレータ。1. A general formula Cd produced by the Bridgman method.
Twin plane of the cadmium-manganese-tellurium crystal represented by 1-x Mn x Te (where 0 <x≤0.7) ((111)
The same as the optical surface) is used as a Faraday rotator having a Faraday rotation angle θ F [degree] as an optical surface, and a polarizer and an analyzer are arranged to face each other via the Faraday rotator. And the polarization direction of the analyzer exists in the (111) plane of the dielectric constant tensor.
The polarization direction of the polarizer is inclined by θ F / 2 [degree] and the polarization direction of the analyzer is inclined by (90-θ F / 2) [degree] with respect to any one of the two orthogonal eigenvectors. And the Faraday rotation of the return light occurs in the region of −θ F / 2 to θ F / 2 across the eigenvector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4095230A JP2549334B2 (en) | 1992-04-15 | 1992-04-15 | Optical isolator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4095230A JP2549334B2 (en) | 1992-04-15 | 1992-04-15 | Optical isolator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05289026A JPH05289026A (en) | 1993-11-05 |
| JP2549334B2 true JP2549334B2 (en) | 1996-10-30 |
Family
ID=14131963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4095230A Expired - Fee Related JP2549334B2 (en) | 1992-04-15 | 1992-04-15 | Optical isolator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2549334B2 (en) |
-
1992
- 1992-04-15 JP JP4095230A patent/JP2549334B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05289026A (en) | 1993-11-05 |
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