JP2551204B2 - Cryopump - Google Patents
CryopumpInfo
- Publication number
- JP2551204B2 JP2551204B2 JP2156557A JP15655790A JP2551204B2 JP 2551204 B2 JP2551204 B2 JP 2551204B2 JP 2156557 A JP2156557 A JP 2156557A JP 15655790 A JP15655790 A JP 15655790A JP 2551204 B2 JP2551204 B2 JP 2551204B2
- Authority
- JP
- Japan
- Prior art keywords
- panel
- hydrogen
- argon
- bottom wall
- adsorption layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は、半導体や磁気ディスク、光ディスク等の製
造部門で使用されるスパッタ装置の処理室を真空に引く
場合等に適し、主にアルゴンガスの排気に好適なクライ
オポンプに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention is suitable for vacuuming the processing chamber of a sputtering apparatus used in the manufacturing sector of semiconductors, magnetic disks, optical disks, etc., and is mainly used for argon gas. The present invention relates to a cryopump suitable for exhausting air.
(従来の技術) 従来、特開昭60−13992号公報等に開示され且つ第3
図に示すように、この種クライオポンプは、ヘリウムを
用いた気体膨張型の冷凍機本体(R)に、絶対温度数十
Kレベルの第1ヒートステージ(X)と更にこれより低
温の第2ヒートステージ(Y)とを備え、第1ヒートス
テージ(X)に、第2ヒートステージ(Y)を覆い、ガ
スの侵入部にバッフル(W)を備える第1パネル(A)
を、又、第2ヒートステージ(Y)に、裏面に活性炭等
の水素吸着層(H)を形成した複数の傘形パネル(P)
から成る第2パネル(B)を各々結合して、第1パネル
(A)でポンプケース(C)側等からの熱侵入を阻止し
ながら、第2パネル(B)の表面にアルゴンガスを凝縮
させると共に裏面の水素吸着層(H)に水素を吸着さ
せ、処理室内に真空に引くようにしている。(Prior Art) Conventionally disclosed in Japanese Patent Application Laid-Open No. 60-13992 and the like
As shown in the figure, this type of cryopump includes a gas expansion type refrigerator body (R) using helium, a first heat stage (X) having an absolute temperature of several tens of K level, and a second heat stage having a temperature lower than this. A first panel (A) that includes a heat stage (Y), covers the second heat stage (Y) on the first heat stage (X), and includes a baffle (W) at a gas intrusion portion.
And a plurality of umbrella-shaped panels (P) having a second heat stage (Y) and a hydrogen adsorption layer (H) such as activated carbon formed on the back surface thereof.
Each of the second panels (B) consisting of (1) and (2) is connected to each other, and the first panel (A) prevents heat from entering from the pump case (C) side and the like, and condenses the argon gas on the surface of the second panel (B). At the same time, hydrogen is adsorbed on the hydrogen adsorption layer (H) on the back surface, and a vacuum is drawn in the processing chamber.
(発明が解決しようとする課題) ところで、スパッタ装置等でアルゴンガスを使用し、
使用後のアルゴンガスを多量に排気するには、アルゴン
ガスと共に混在する水素ガス(主にカソード材料から放
出される水素ガス)を飽和させないように、該水素ガス
を同時に良好に排気する必要がある。上記従来構造のも
のは、第2パネル(B)を複数の傘形パネル(P)で構
成したことにより、第2パネル(B)を単に有底筒形の
パネルとしたものに比べて、アルゴンの付着面積及び水
素の吸着面積を共に広く確保でき、一見、アルゴンガス
の大量排気に適するように思える。(Problems to be solved by the invention) By the way, using an argon gas in a sputtering apparatus or the like,
In order to exhaust a large amount of used argon gas, it is necessary to simultaneously exhaust the hydrogen gas at the same time so as not to saturate the hydrogen gas mixed with the argon gas (mainly hydrogen gas released from the cathode material). . In the conventional structure described above, since the second panel (B) is composed of a plurality of umbrella-shaped panels (P), compared with the case where the second panel (B) is simply a bottomed tubular panel, It is possible to secure a wide area for adhering hydrogen and an area for adsorbing hydrogen, and at first glance, it seems to be suitable for large-scale exhaust of argon gas.
しかし、実際には、図示のように、アルゴン(a)の
付着が進行すると、各傘形パネル(P)の上下間の隙間
が閉塞され、内側に隠れる水素吸着層(H)を利用する
ことができなくなり、実質的に最下端部の水素吸着層
(H)のみで水素の排気を行うことになり、このため、
水素の排気量が抑制され、これに伴い、アルゴンの排気
量も抑制される問題がある。However, in practice, as shown in the figure, when the deposition of argon (a) progresses, the gap between the upper and lower sides of each umbrella-shaped panel (P) is closed and the hydrogen adsorption layer (H) hidden inside is used. Is not possible, and the hydrogen is exhausted only by the hydrogen adsorption layer (H) at the bottom end, and therefore,
There is a problem that the exhaust amount of hydrogen is suppressed, and accordingly, the exhaust amount of argon is also suppressed.
又、アルゴン(a)は、第2パネル(B)の上面で、
温度レベルの高い第1パネル(A)やバッフル(W)と
の間の空間で堆積されるため、その堆積量を増大させる
には、第1パネル(A)やバッフル(W)との間の空間
を大きくする必要があり、第2パネル(B)を第1パネ
ル(A)に対し小さくしたいが、該第2パネル(B)を
小型化すると、傘形パネル(P)の間隔が狭くなり、更
にこの小型化に伴う水素吸着面積の縮小を補うため傘形
パネル(P)の枚数を増やす場合は一層その間隔が狭く
なり、従って、アルゴン(a)が堆積されると水素吸着
層(H)は極めて容易に閉塞されてしまい、第2パネル
(B)の小型化つまり堆積空間の拡大は困難で、アルゴ
ンの排気量に限界が生じる問題がある。尚、第2パネル
(B)を小型化せずに第1パネル(X)を大型化して堆
積空間を拡大する場合は、装置全体の大型化を招く問題
がある。Also, argon (a) is on the upper surface of the second panel (B),
Since it is deposited in the space between the first panel (A) and the baffle (W) having a high temperature level, the amount of deposition can be increased by increasing the temperature between the first panel (A) and the baffle (W). It is necessary to make the space large, and it is desirable to make the second panel (B) smaller than the first panel (A). However, if the second panel (B) is downsized, the space between the umbrella-shaped panels (P) becomes narrower. Further, in order to compensate for the reduction in the hydrogen adsorption area due to the size reduction, when the number of the umbrella-shaped panels (P) is increased, the interval becomes narrower. Therefore, when the argon (a) is deposited, the hydrogen adsorption layer (H ) Is blocked very easily, it is difficult to downsize the second panel (B), that is, to enlarge the deposition space, and there is a problem that the exhaust amount of argon is limited. In addition, when the first panel (X) is enlarged to enlarge the deposition space without downsizing the second panel (B), there is a problem that the entire apparatus is enlarged.
従って、上記従来のように第2パネル(B)を傘形パ
ネル(P)で構成しても、該第2パネル(B)を単に有
底筒形のパネルとしたものと顕著な差異はなく、アルゴ
ンの積算排気量は、例えばガス侵入部の口径が300mm程
度の標準的ポンプで、たかだか2000SL;スタンダード・
リッター(0℃,1気圧)が限界とされ、スパッタ装置へ
の適用には性能面で不十分となる問題がある。Therefore, even if the second panel (B) is composed of the umbrella-shaped panel (P) as in the conventional case, there is no remarkable difference from the case where the second panel (B) is simply a bottomed tubular panel. The cumulative displacement of argon is, for example, a standard pump with a gas intrusion part having a diameter of about 300 mm, at most 2000 SL; standard
The liter (0 ° C., 1 atm) is the limit, and there is a problem that performance is insufficient for application to a sputtering device.
本発明では、第2パネルの構造を工夫することによ
り、アルゴンの付着堆積により水素吸着層への流入経路
が閉鎖されて水素吸着量が減少されることがなく、しか
も、水素の吸着面積を充分確保して水素の吸着を良好に
行うことができながら、第2パネルの小型化を可能にし
て第1パネル内におけるアルゴンの堆積空間を拡大し、
アルゴンの堆積量の増大を図って、アルゴンの排気量及
び水素の排気量を増大するクライオポンプを提供するこ
とを目的とする。In the present invention, by devising the structure of the second panel, the inflow route to the hydrogen adsorption layer is not closed due to the deposition and deposition of argon, and the hydrogen adsorption amount is not reduced, and the hydrogen adsorption area is sufficient. While ensuring and adsorbing hydrogen favorably, the second panel can be downsized and the argon deposition space in the first panel can be expanded.
An object of the present invention is to provide a cryopump that increases the amount of argon deposition and the amount of argon exhaust and hydrogen exhaust.
(課題を解決するための手段) そこで、本発明では、上記目的を達成するため、冷凍
機本体(10)に第1及び第2ヒートステージ(1,2)を
備え、前記第2ヒートステージ(2)を覆い、ガスの侵
入部にバッフル(4)をもつ第1パネル(5)を前記第
1ヒートステージ(1)に結合すると共に、前記第1パ
ネル(5)に内装され、水素吸着層(7)をもつ第2パ
ネル(6)を前記第2ヒートステージ(2)に結合した
クライオポンプにおいて、前記第2パネル(6)を、前
記第2ヒートステージ(2)に結合する底壁(61a)及
び該底壁(61a)の外周部から反バッフル側に延びる筒
壁(61b)をもつ有底筒形の外側パネル(61)と、この
外側パネル(61)の内側に放射状に配設され、前記底壁
(61a)の背部から前記筒壁(61b)の裾部にかけて延び
る複数の放射状板(62a)から成る内側パネル(62)と
で構成し、前記内側パネル(62)に前記水素吸着層
(7)を形成すると共に、隣合う前記各放射状板(62
a)間に、前記底壁(61a)の背部から前記筒壁(61b)
の裾部にかけて連続して形成される放射状空間(63)を
設けたのである。(Means for Solving the Problem) Therefore, in the present invention, in order to achieve the above object, the refrigerator main body (10) is provided with the first and second heat stages (1, 2), and the second heat stage ( The first panel (5) which covers the second part (2) and has a baffle (4) at the gas intrusion part is coupled to the first heat stage (1), and is also installed in the first panel (5) to provide a hydrogen adsorption layer. In a cryopump in which a second panel (6) having (7) is coupled to the second heat stage (2), a bottom wall (which couples the second panel (6) to the second heat stage (2) ( 61a) and a bottomed cylindrical outer panel (61) having a cylindrical wall (61b) extending from the outer peripheral portion of the bottom wall (61a) to the side opposite the baffle, and radially arranged inside the outer panel (61). And extends from the back part of the bottom wall (61a) to the hem part of the cylindrical wall (61b). An inner panel (62) composed of a plurality of radial plates (62a), the hydrogen adsorption layer (7) is formed on the inner panel (62), and the adjacent radial plates (62)
Between a), from the back of the bottom wall (61a) to the cylindrical wall (61b)
The radial space (63) is formed continuously over the hem of the.
又、上記構成で、外側パネル(61)を、筒壁(61b)
の裾部に対し底壁(61a)側頂部の外径を小さくするこ
とにした。In the above structure, the outer panel (61) is attached to the cylindrical wall (61b).
We decided to make the outer diameter of the top of the bottom wall (61a) smaller than that of the bottom.
(作用) 外側パネル(61)の内側に放射状に配設され、該外側
パネル(61)の底壁(61a)の背部から筒壁(61b)の裾
部にかけて延びる複数の放射状板(62a)から成る内側
パネル(62)に水素吸着層(7)を形成し、しかも、隣
合う前記各放射状板(62a)間に、前記底壁(61a)の背
部から前記筒壁(61b)の裾部にかけて連続して形成さ
れる放射状空間(63)を設けているので、該水素吸着層
(7)全体を、前記外側パネル(61)の裾部開口部全域
から第1パネル(5)の内部つまりガスの侵入経路に開
放させられる。(Operation) From a plurality of radial plates (62a) radially arranged inside the outer panel (61) and extending from the back of the bottom wall (61a) of the outer panel (61) to the hem of the tubular wall (61b) A hydrogen adsorbing layer (7) is formed on the inner panel (62), and between the adjacent radial plates (62a), from the back of the bottom wall (61a) to the hem of the cylindrical wall (61b). Since the continuously formed radial space (63) is provided, the entire hydrogen adsorbing layer (7) is covered from the entire hem opening of the outer panel (61) to the inside of the first panel (5), that is, the gas. It is opened to the invasion route of.
従って、前記外側パネル(61)の表面にアルゴンを多
量に堆積させられながら、該アルゴンの堆積量に関係な
く、凝縮されなかった水素を、前記外側パネル(61)の
裾部開口部全域から、該外側パネル(61)内に常時取り
込ませることができるので、第2パネル(6)の内部に
水素を入射させる確率を最大にでき、かつ、第2パネル
(6)内に入射する水素がパネル内部における局所的な
吸着面に集中するのではなく、放射状空間(63)によ
り、内側パネル(61)全体に均一に到達させられ、水素
を内側パネル(61)に設ける水素吸着層(7)全体に吸
着させられるのであり、水素の排気量及びアルゴンの排
気量を増加することができる。Therefore, while a large amount of argon is being deposited on the surface of the outer panel (61), uncondensed hydrogen is irrelevant from the entire bottom opening of the outer panel (61) regardless of the amount of the deposited argon. Since it can be taken into the outer panel (61) at all times, the probability that hydrogen will enter the inside of the second panel (6) can be maximized, and the hydrogen that enters the second panel (6) will be the panel. The entire hydrogen adsorption layer (7) that allows hydrogen to reach the entire inner panel (61) uniformly by the radial space (63) and not to concentrate on the local adsorption surface inside, and to provide hydrogen to the inner panel (61). Therefore, the exhaust amount of hydrogen and the exhaust amount of argon can be increased.
さらに、アルゴンの堆積量に関係なく、凝縮されなか
った水素を、前記外側パネル(61)の裾部開口部全域か
ら、該外側パネル(61)内に常時取り込ませて水素の吸
着を行うようにしているので、アルゴンの付着堆積によ
り水素吸着層(7)が閉塞されることがなく、水素の吸
着を良好に行えながら、第2パネル(6)の大きさをア
ルゴンの所望排気量に見合う任意の大きさとすることが
できるのであり、該第2パネル(6)を小型化すること
により、バッフル(4)及び第1パネル(5)と外側パ
ネル(61)との間の空間に充分な堆積空間が確保できる
こととなって、アルゴンの堆積量の増大が図れ、排気量
を増大できる。Further, regardless of the amount of accumulated argon, uncondensed hydrogen is always taken into the outer panel (61) through the entire skirt opening of the outer panel (61) to adsorb hydrogen. Since the hydrogen adsorption layer (7) is not blocked by the deposition and deposition of argon, the size of the second panel (6) can be arbitrarily adjusted to the desired exhaust amount of argon while adsorbing hydrogen favorably. And the size of the second panel (6) can be reduced so that sufficient deposition can be achieved in the space between the baffle (4) and the first panel (5) and the outer panel (61). Since the space can be secured, the deposition amount of argon can be increased and the exhaust amount can be increased.
しかも、前記内側パネル(62)の複数の放射状板(62
a)を前記外側パネル(61)内において放射状に配設
し、しかも、これら放射状板(62a)を前記外側パネル
(61)の裾部開口部全域から第1パネル(5)内に開放
させているので、前記外側パネル(61)の限られた内側
空間における水素吸着層(7)の面積を充分確保しつ
つ、水素の吸着も良好に行える。更に第2パネル(6)
の小型化に伴い放射状板(62a)一枚当り水素吸着層
(7)の面積が縮小しても、放射状板(62a)の枚数を
増やすだけで、水素吸着層(7)の面積を充分確保する
ことができる。Moreover, the plurality of radial plates (62) of the inner panel (62) are
a) are radially arranged in the outer panel (61), and these radial plates (62a) are opened into the first panel (5) from the entire hem opening of the outer panel (61). Therefore, it is possible to satisfactorily adsorb hydrogen while sufficiently securing the area of the hydrogen adsorption layer (7) in the limited inner space of the outer panel (61). Second panel (6)
Even if the area of the hydrogen adsorption layer (7) per radial plate (62a) is reduced due to the miniaturization of the above, the area of the hydrogen adsorption layer (7) can be secured sufficiently by increasing the number of the radial plates (62a). can do.
又、外側パネル(61)を裾部に対し頂部の外径を小さ
くすることにより、アルゴンがその侵入経路上流に位置
する外側パネル(61)の頂部に偏って付着するのを回避
でき、アルゴンを外側パネル(61)の外周に筒状に良好
に付着させることができ、その堆積量を更に良好に増大
することができる。In addition, by making the outer diameter of the top panel smaller than the skirt of the outer panel (61), it is possible to prevent the argon from being unevenly attached to the top portion of the outer panel (61) located upstream of the invasion route, and to prevent the argon from being attached. The outer panel (61) can be satisfactorily cylindrically attached to the outer periphery of the outer panel (61), and the amount of deposition can be further increased.
(実施例) 第1図において、(10)はヘリウムを作動流体とする
気体膨張型の冷凍機本体であり、その第1冷凍筒(11)
の端面に絶対温度40〜70K程度の第1ヒートステージ
(1)を、又、第2冷凍筒(12)の端面に10〜20K程度
の第2ヒートステージ(2)を各々備えている。(3)
は筒形のポンプケースであり、上部に、スパッタ装置の
処理室に取付ける吸気口フランジ(8)を設けている。(Embodiment) In FIG. 1, (10) is a gas expansion type refrigerator main body using helium as a working fluid, and its first freezing cylinder (11)
Is equipped with a first heat stage (1) having an absolute temperature of about 40 to 70K, and a second heat stage (2) having a temperature of about 10 to 20K on the end surface of the second freezing cylinder (12). (3)
Is a cylindrical pump case, and is provided with an intake port flange (8) attached to the processing chamber of the sputtering apparatus on the upper part.
前記第1ヒートステージ(1)には、第2ヒートステ
ージ(2)を覆い、ガスの侵入部に複数のフィン(41)
を同心状に備えて成るバッフル(4)を取付けた有底筒
形の第1パネル(5)を結合し、前記ポンプケース
(3)や処理室側からの熱侵入を遮断又は低減するよう
にしている。The first heat stage (1) covers the second heat stage (2) and has a plurality of fins (41) at the gas intrusion part.
A first panel (5) having a bottom and having a bottom and having a baffle (4) concentrically provided therein is coupled to block or reduce heat intrusion from the pump case (3) or the processing chamber side. ing.
そして、前記第2ヒートステージ(2)に設ける第2
パネル(6)を、前記第2ヒートステージ(2)に結合
する底壁(61a)及び該底壁(61a)の外周部から反バッ
フル側に延びる筒壁(61b)をもつ有底筒形の外側パネ
ル(61)と、この外側パネル(61)の内側に第2図に示
すように放射状に配設され、前記底壁(61a)の背部か
ら前記筒壁(61b)の裾部にかけて延びる複数の放射状
板(62a)から成る内側パネル(62)とで構成する。そ
して、前記内側パネル(62)を構成する各放射状板(62
a)に、活性炭を用いた水素吸着層(7)を形成する。Then, the second provided on the second heat stage (2)
The panel (6) has a bottomed tubular shape having a bottom wall (61a) for coupling to the second heat stage (2) and a tubular wall (61b) extending from the outer peripheral portion of the bottom wall (61a) to the side opposite to the baffle. An outer panel (61) and a plurality of radially arranged inside the outer panel (61), as shown in FIG. 2, extending from the back of the bottom wall (61a) to the hem of the tubular wall (61b). And an inner panel (62) composed of a radial plate (62a). Then, each radial plate (62) that constitutes the inner panel (62) is
In a), a hydrogen adsorption layer (7) using activated carbon is formed.
さらに、隣合う前記各放射状板(62a)間に、前記底
壁(61a)の背部から前記筒壁(61b)の裾部にかけて連
続して形成される放射状空間(63)を設ける。Further, a radial space (63) formed continuously from the back of the bottom wall (61a) to the hem of the tubular wall (61b) is provided between the adjacent radial plates (62a).
以上の構成によれば、外側パネル(61)の内側に放射
状に配設され、該外側パネル(61)の底壁(61a)の背
部から筒壁(61b)の裾部にかけて延びる複数の放射状
板(62a)から成る内側パネル(62)に水素吸着層
(7)を形成し、しかも、隣合う前記各放射状板(62
a)間に、前記底壁(61a)の背部から前記筒壁(61b)
の裾部にかけて連続して形成される放射状空間(63)を
設けているので、該水素吸着層(7)全体を、前記外側
パネル(61)の裾部開口部全域から第1パネル(5)の
内部つまりガスの侵入経路に開放させられる。According to the above configuration, a plurality of radial plates radially arranged inside the outer panel (61) and extending from the back portion of the bottom wall (61a) of the outer panel (61) to the hem portion of the cylindrical wall (61b). A hydrogen adsorption layer (7) is formed on an inner panel (62) made of (62a), and the adjacent radial plates (62) are formed.
Between a), from the back of the bottom wall (61a) to the cylindrical wall (61b)
Since the radial space (63) is formed continuously over the hem of the first panel (5), the entire hydrogen adsorption layer (7) is extended from the entire hem opening of the outer panel (61) to the first panel (5). It is opened to the inside of, that is, the passage of gas.
従って、前記外側パネル(61)の表面にアルゴンを多
量に堆積させられながら、該アルゴンの堆積量に関係な
く、凝縮されなかった水素を、前記外側パネル(61)の
裾部開口部全域から、該外側パネル(61)内に常時取り
込ませることができるので、第2パネル(6)の内部に
水素を入射させる確率を最大にでき、かつ、第2パネル
(6)内に入射する水素がパネル内部における局所的な
吸着面に集中するのではなく、放射状空間(63)によ
り、内側パネル(61)全体に均一に到達させられ、水素
を内側パネル(61)に設ける水素吸着層(7)全体に吸
着させられるのであり、従来のような水素吸着層の閉塞
は無く、水素の吸着を常時良好に行えて、水素の排気量
及びアルゴンの排気量を増加できる。Therefore, while a large amount of argon is being deposited on the surface of the outer panel (61), uncondensed hydrogen is irrelevant from the entire bottom opening of the outer panel (61) regardless of the amount of the deposited argon. Since it can be taken into the outer panel (61) at all times, the probability that hydrogen will enter the inside of the second panel (6) can be maximized, and the hydrogen that enters the second panel (6) will be the panel. The entire hydrogen adsorption layer (7) that allows hydrogen to reach the entire inner panel (61) uniformly by the radial space (63) and not to concentrate on the local adsorption surface inside, and to provide hydrogen to the inner panel (61). Since the hydrogen adsorption layer is not blocked as in the conventional case, hydrogen can be adsorbed well at all times, and the exhaust amount of hydrogen and the exhaust amount of argon can be increased.
さらに、アルゴンの堆積量に関係なく、凝縮されなか
った水素を、前記外側パネル(61)の裾部開口部全域か
ら、該外側パネル(61)内に常時取り込ませて水素の吸
着を行うようにしているので、アルゴンの付着堆積によ
り水素吸着層(7)が閉塞されることがなく、水素の吸
着を良好に行えながら、第2パネル(6)の大きさをア
ルゴンの所望排気量に見合う任意の大きさとすることが
できるのであり、該第2パネル(6)を小型化すること
により、バッフル(4)及び第1パネル(5)と外側パ
ネル(61)との間の空間に十分な堆積空間が確保できる
こととなって、アルゴンの堆積量の増大が図れ、排気量
を増大できる。Further, regardless of the amount of accumulated argon, uncondensed hydrogen is always taken into the outer panel (61) through the entire skirt opening of the outer panel (61) to adsorb hydrogen. Since the hydrogen adsorption layer (7) is not blocked by the deposition and deposition of argon, the size of the second panel (6) can be arbitrarily adjusted to the desired exhaust amount of argon while adsorbing hydrogen favorably. Of the baffle (4) and the space between the first panel (5) and the outer panel (61) by reducing the size of the second panel (6). Since the space can be secured, the deposition amount of argon can be increased and the exhaust amount can be increased.
しかも、前記内側パネル(62)の複数の放射状板(62
a)を前記外側パネル(61)内において放射状に配設
し、しかも、これら放射状板(62a)を前記外側パネル
(61)の裾部開口部全域から第1パネル(5)内に開放
させているので、前記外側パネル(61)の限られた内側
空間における水素吸着層(7)の面積を充分確保しつ
つ、水素の吸着も良好に行える。更に第2パネル(6)
の小型化に伴い放射状板(62a)一枚当りの水素吸着層
(7)の面積が縮小しても、放射状板(62a)の枚数を
増やすだけで、水素吸着層(7)の面積を充分確保する
ことができる。Moreover, the plurality of radial plates (62) of the inner panel (62) are
a) are radially arranged in the outer panel (61), and these radial plates (62a) are opened into the first panel (5) from the entire hem opening of the outer panel (61). Therefore, it is possible to satisfactorily adsorb hydrogen while sufficiently securing the area of the hydrogen adsorption layer (7) in the limited inner space of the outer panel (61). Second panel (6)
Even if the area of the hydrogen adsorption layer (7) per radial plate (62a) is reduced due to the downsizing, the area of the hydrogen adsorption layer (7) will be sufficient by increasing the number of radial plates (62a). Can be secured.
又、以上の構成で、外側パネル(61)は、筒壁(61
b)の裾部に対し底壁(61a)に近い頂部の外径を小さく
して、テーパ形状としているのであり、この構造によ
り、アルゴン(a)がその侵入経路上流に位置する外側
パネル(61)の頂部に偏って付着してトップヘビーな状
態となるのを回避でき、該アルゴン(a)を外側パネル
(61)の外周に筒状に良好に付着させることができ、全
体として、堆積量を更に良好に増大できるのである。Also, with the above configuration, the outer panel (61) is
The outer diameter of the top part close to the bottom wall (61a) is made smaller than the bottom part of b) to form a taper shape. With this structure, the outer panel (61) in which argon (a) is located upstream of its entry path is ) It is possible to avoid unevenly adhering to the top part of) and become a top-heavy state, and it is possible to satisfactorily adhere the argon (a) to the outer periphery of the outer panel (61) in a cylindrical shape. Can be increased even better.
因に、以上説明した構造のものでその口径が約300mm
程度のものでは、積算のアルゴン排気容量を4000〜4500
SLとほぼ従来の2倍程度に増加できるに至った。By the way, with the structure described above, the diameter is about 300 mm
In the case of about 4 to 4, the total argon exhaust capacity is 4000 to 4500
It has been possible to double the SL, which is almost double that of the conventional model.
(発明の効果) 以上のように、本発明によれば、前記第2パネル
(6)を、前記第2ヒートステージ(2)に結合する底
壁(61a)及び該底壁(61a)の外周部から反バッフル側
に延びる筒壁(61b)をもつ有底筒形の外側パネル(6
1)と、この外側パネル(61)の内側に放射状に配列さ
れ、前記底壁(61a)の背部から前記筒壁(61b)の裾部
にかけて延びる複数の放射状板(62a)から成る内側パ
ネル(62)とで構成し、前記内側パネル(62)に前記水
素吸着層(7)を形成すると共に、隣合う前記各放射状
板(62a)間に、前記底壁(61a)の背部から前記筒壁
(61b)の裾部にかけて連続して形成される放射状空間
(63)を設けたから、アルゴンの付着堆積により前記水
素吸着層(7)への流入経路が閉塞される事態を回避で
きると共に、第2パネル(6)の小型化によるアルゴン
の堆積空間の拡大が可能となり、しかも、前記水素吸着
層(7)の吸着面積も充分確保できるので、アルゴンの
排気量及び水素の排気量を増大することができ、スパッ
タ装置用等のアルゴン大排気用ポンプとして好適なもの
となるのである。(Effects of the Invention) As described above, according to the present invention, the bottom panel (61a) coupling the second panel (6) to the second heat stage (2) and the outer circumference of the bottom wall (61a). Bottomed tubular outer panel (6b) having a tubular wall (61b) extending from the section to the side opposite the baffle (6b)
1) and an inner panel (62a) radially arranged inside the outer panel (61) and extending from the back portion of the bottom wall (61a) to the hem portion of the cylindrical wall (61b). 62) to form the hydrogen adsorption layer (7) on the inner panel (62), and between the adjacent radial plates (62a) from the back portion of the bottom wall (61a) to the cylindrical wall. Since the radial space (63) formed continuously over the skirt of (61b) is provided, it is possible to avoid the situation where the inflow path to the hydrogen adsorption layer (7) is blocked by the deposition and deposition of argon, and Since the deposition space of argon can be expanded by downsizing the panel (6) and the adsorption area of the hydrogen adsorption layer (7) can be sufficiently secured, the exhaust amount of argon and the exhaust amount of hydrogen can be increased. It is possible to use a large exhaust port for argon such as for sputtering equipment. It's becomes suitable as a flop.
この場合、前記外側パネル(61)を、筒壁(61b)の
裾部に対し底壁(61a)側頂部の外径を小さくすれば、
アルゴンがその侵入経路上流に位置する外側パネル(6
1)の頂部に偏って付着するのを回避でき、アルゴンを
外側パネル(61)の外周に筒状に良好に付着させること
ができて、その堆積量を更に良好に増大することができ
るのである。In this case, if the outer diameter of the outer panel (61) is smaller than that of the bottom of the bottom wall (61a) with respect to the bottom of the tubular wall (61b),
An outer panel (6 with argon located upstream of its entry path)
It is possible to avoid unevenly adhering to the top of 1), and it is possible to favorably adhere argon to the outer periphery of the outer panel (61) in a cylindrical shape, and to further increase the deposition amount. .
第1図は本発明に係るクライオポンプの要部断面図、第
2図は同第2パネルの底面図、第3図は従来例の断面図
である。 (1)……第1ヒートステージ (2)……第2ヒートステージ (4)……バッフル (5)……第1パネル (6)……第2パネル (7)……水素吸着層 (10)……冷凍機本体 (61)……外側パネル (62)……内側パネル (61a)……底壁 (61b)……筒壁 (62a)……放射状板FIG. 1 is a sectional view of an essential part of a cryopump according to the present invention, FIG. 2 is a bottom view of the same second panel, and FIG. 3 is a sectional view of a conventional example. (1) …… First heat stage (2) …… Second heat stage (4) …… Baffle (5) …… First panel (6) …… Second panel (7) …… Hydrogen adsorption layer (10) ) …… Refrigerator body (61) …… Outer panel (62) …… Inner panel (61a) …… Bottom wall (61b) …… Cylinder wall (62a) …… Radial plate
Claims (2)
テージ(1,2)を備え、前記第2ヒートステージ(2)
を覆い、ガスの侵入部にバッフル(4)をもつ第1パネ
ル(5)を前記第1ヒートステージ(1)に結合すると
共に、前記第1パネル(5)に内装され、水素吸着層
(7)をもつ第2パネル(6)を前記第2ヒートステー
ジ(2)に結合したクライオポンプにおいて、 前記第2パネル(6)を、前記第2ヒートステージ
(2)に結合する底壁(61a)及び該底壁(61a)の外周
部から反バッフル側に延びる筒壁(61b)をもつ有底筒
形の外側パネル(61)と、この外側パネル(61)の内側
に放射状に配設され、前記底壁(61a)の背部から前記
筒壁(61b)の裾部にかけて延びる複数の放射状板(62
a)から成る内側パネル(62)とで構成し、 前記内側パネル(62)に前記水素吸着層(7)を形成す
ると共に、 隣合う前記各放射状板(62a)間に、前記底壁(61a)の
背部から前記筒壁(61b)の裾部にかけて連続して形成
される放射状空間(63)を設けていることを特徴とする
クライオポンプ。1. A refrigerator main body (10) is provided with first and second heat stages (1, 2), and the second heat stage (2).
And a first panel (5) having a baffle (4) at a gas intrusion part is coupled to the first heat stage (1), and the first panel (5) is internally provided with a hydrogen adsorption layer (7). In a cryopump in which a second panel (6) having (1) is coupled to the second heat stage (2), a bottom wall (61a) coupling the second panel (6) to the second heat stage (2). And a bottomed cylindrical outer panel (61) having a cylindrical wall (61b) extending from the outer peripheral portion of the bottom wall (61a) to the side opposite to the baffle, and arranged radially inside the outer panel (61), A plurality of radial plates (62) extending from the back of the bottom wall (61a) to the hem of the cylindrical wall (61b).
a) and an inner panel (62) made of a), the hydrogen adsorption layer (7) is formed on the inner panel (62), and the bottom wall (61a) is provided between the adjacent radial plates (62a). ), And a radial space (63) formed continuously from the back portion to the hem of the cylindrical wall (61b) is provided.
に対し底壁(61a)側頂部の外径を小さくしている請求
項1記載のクライオポンプ。2. The cryopump according to claim 1, wherein the outer panel (61) has a smaller outer diameter at the bottom wall (61a) side top than the skirt of the cylindrical wall (61b).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2156557A JP2551204B2 (en) | 1990-06-14 | 1990-06-14 | Cryopump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2156557A JP2551204B2 (en) | 1990-06-14 | 1990-06-14 | Cryopump |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0447180A JPH0447180A (en) | 1992-02-17 |
| JP2551204B2 true JP2551204B2 (en) | 1996-11-06 |
Family
ID=15630401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2156557A Expired - Fee Related JP2551204B2 (en) | 1990-06-14 | 1990-06-14 | Cryopump |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2551204B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140116801A (en) * | 2013-03-25 | 2014-10-06 | 스미도모쥬기가이고교 가부시키가이샤 | Cryopump and method for evacuation |
| KR20160003618A (en) * | 2013-03-05 | 2016-01-11 | 스미도모쥬기가이고교 가부시키가이샤 | Cryopump |
| US10359034B2 (en) | 2016-03-29 | 2019-07-23 | Sumitomo Heavy Industries, Ltd. | Cryopump |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5301511A (en) * | 1992-06-12 | 1994-04-12 | Helix Technology Corporation | Cryopump and cryopanel having frost concentrating device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4285710A (en) * | 1978-09-18 | 1981-08-25 | Varian Associates, Inc. | Cryogenic device for restricting the pumping speed of selected gases |
| US4494381A (en) * | 1983-05-13 | 1985-01-22 | Helix Technology Corporation | Cryopump with improved adsorption capacity |
-
1990
- 1990-06-14 JP JP2156557A patent/JP2551204B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160003618A (en) * | 2013-03-05 | 2016-01-11 | 스미도모쥬기가이고교 가부시키가이샤 | Cryopump |
| US9700812B2 (en) | 2013-03-05 | 2017-07-11 | Sumitomo Heavy Industries, Ltd. | Cryopump |
| KR101990520B1 (en) * | 2013-03-05 | 2019-06-18 | 스미도모쥬기가이고교 가부시키가이샤 | Cryopump |
| KR20140116801A (en) * | 2013-03-25 | 2014-10-06 | 스미도모쥬기가이고교 가부시키가이샤 | Cryopump and method for evacuation |
| US10359034B2 (en) | 2016-03-29 | 2019-07-23 | Sumitomo Heavy Industries, Ltd. | Cryopump |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0447180A (en) | 1992-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5855118A (en) | Combination cryopump/getter pump and method for regenerating same | |
| US6299746B1 (en) | Getter system for purifying the confinement volume in process chambers | |
| JP5193786B2 (en) | Cryopump | |
| TWI639769B (en) | Cryopump and second stage array for cryopump | |
| US5772404A (en) | Compact getter pump with nested thermally insulating shields | |
| JP6415230B2 (en) | Cryopump | |
| CN107725319B (en) | Low-temperature pump | |
| WO1997035652A9 (en) | Combination cryopump/getter pump and method for regenerating same | |
| JP6338403B2 (en) | Cryopump and vacuum exhaust method | |
| JP2551204B2 (en) | Cryopump | |
| US6155059A (en) | High capacity cryopump | |
| US4494381A (en) | Cryopump with improved adsorption capacity | |
| JP2010048132A (en) | Cryopump | |
| JP7339950B2 (en) | cryopump | |
| JPH08330607A (en) | Small semiconductor device and small infrared sensor | |
| JPH05149443A (en) | Magnetic fluid seal device | |
| JP2009108744A (en) | Cryopump | |
| JPH0328377A (en) | Apparatus for producing semiconductor | |
| JPH04103885A (en) | Cryopanel in cryopump | |
| JP2568364B2 (en) | Turbo pump with trap panel | |
| CN110234878A (en) | Cryogenic pump | |
| JPH10102244A (en) | Sputtering equipment | |
| JPH01259161A (en) | Vacuum equipment | |
| JPS63310618A (en) | Fine particle collecting device for vacuum exhausting system | |
| JPS63237528A (en) | Semiconductor manufacturing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080822 Year of fee payment: 12 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080822 Year of fee payment: 12 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080822 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090822 Year of fee payment: 13 |
|
| LAPS | Cancellation because of no payment of annual fees |