JP2553980B2 - Oxygen sensor - Google Patents
Oxygen sensorInfo
- Publication number
- JP2553980B2 JP2553980B2 JP3349715A JP34971591A JP2553980B2 JP 2553980 B2 JP2553980 B2 JP 2553980B2 JP 3349715 A JP3349715 A JP 3349715A JP 34971591 A JP34971591 A JP 34971591A JP 2553980 B2 JP2553980 B2 JP 2553980B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- hole
- film
- oxygen sensor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000001301 oxygen Substances 0.000 title claims description 28
- 229910052760 oxygen Inorganic materials 0.000 title claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 24
- 239000010409 thin film Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 29
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 28
- 239000007789 gas Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 16
- 239000007784 solid electrolyte Substances 0.000 claims description 12
- 239000000615 nonconductor Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 26
- 229910004298 SiO 2 Inorganic materials 0.000 description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- -1 oxygen ions Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measuring Oxygen Concentration In Cells (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【０００１】[0001]
【産業上の利用分野】この発明は、気体中の酸素濃度を
測るためのセンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sensor for measuring oxygen concentration in gas.
【０００２】[0002]
【従来の技術】固体電解質である安定化ジルコニア板を
多孔質白金電極で挟み、５００℃位に加熱して電圧を印
加すると、酸素が酸素イオンとなってジルコニア板を通
過し、電極間に電流が流れる。そして、被検ガスの自由
な通過をある程度制限すると、この電流が、酸素濃度に
比例し、印加電圧の大きさに影響されないようになる
（限界電流特性）。このように被検ガスの自由な通過を
制限するために、従来は、酸素センサのガス流入側に、
小孔（被検ガスの拡散孔）のあいたキャップを被せた
り、または、酸素センサを多孔性のアルミナ基板上に形
成し、基板中の微細な孔をガスの拡散孔としていた。2. Description of the Related Art When a stabilized zirconia plate, which is a solid electrolyte, is sandwiched between porous platinum electrodes and heated to about 500 ° C. and a voltage is applied, oxygen turns into oxygen ions, passes through the zirconia plate, and a current flows between the electrodes. Flows. When the free passage of the test gas is limited to some extent, this current is proportional to the oxygen concentration and is not influenced by the magnitude of the applied voltage (limit current characteristic). In order to limit the free passage of the test gas in this way, conventionally, on the gas inflow side of the oxygen sensor,
A cap with small holes (diffusion holes for the test gas) was covered, or an oxygen sensor was formed on a porous alumina substrate, and the fine holes in the substrate were used as gas diffusion holes.
【０００３】これら従来のものでは、ジルコニア板をヒ
ータで直接加熱するのではなく、ヒータでキャップまた
は多孔質基板を加熱し、これで間接的にジルコニア板を
加熱するようになっており、熱がキャップや多孔質基板
に逃げてしまうので消費電力が大きくなる欠点があっ
た。In these conventional devices, the zirconia plate is not directly heated by the heater, but the cap or the porous substrate is heated by the heater, and the zirconia plate is indirectly heated by the heater. Since it escapes to the cap or the porous substrate, there is a drawback that power consumption increases.
【０００４】また、多孔質基板を用いると、製造時にこ
れにガスやエッチング溶液が浸透するので、これを除去
する手間が掛かり、また、その上に形成したジルコニア
等の薄膜が剥離しやすいという問題もある。Further, when a porous substrate is used, a gas or an etching solution permeates into the porous substrate at the time of manufacturing, so that it takes time and effort to remove the porous substrate, and a thin film such as zirconia formed on the porous substrate is easily peeled off. There is also.
【０００５】[0005]
【発明が解決しようとする課題】この発明は、多孔質基
板を用いない、消費電力の小さな酸素センサを得ること
を目的とする。SUMMARY OF THE INVENTION An object of the present invention is to obtain an oxygen sensor which consumes less power and does not use a porous substrate.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
にこの発明の酸素センサは、基板上に形成された電気絶
縁体薄膜であって、該基板にあけられた穴の上に位置し
ている部分に薄膜ヒータを形成する。薄膜ヒータは、例
えば、スパッタで形成した白金薄膜でもよいし、高濃度
ホウ素添加単結晶シリコン薄膜でもよい。In order to achieve the above object, the oxygen sensor of the present invention is an electrical insulator thin film formed on a substrate, and is located on a hole formed in the substrate. A thin film heater is formed on the existing portion. The thin film heater may be, for example, a platinum thin film formed by sputtering or a high concentration boron-added single crystal silicon thin film.
【０００７】この薄膜ヒータの上に、電極で両側を挟ん
だジルコニア固体電解質の薄膜を密着形成する。そし
て、これら電極の一方が被検ガスにさらされるよう、薄
膜ヒータおよび電気絶縁体薄膜に基板の穴と連通する透
孔をあける。限界電流特性を得るために、基板にあいて
いる穴を、上側は該電気絶縁体薄膜で、下側は閉塞部材
でそれぞれ塞ぎ、これら電気絶縁体薄膜または閉塞部材
のいずれかに被検ガスが拡散するための小孔をあけるこ
とができる。代りに、ジルコニア固体電解質を挟んでい
る電極の一方をガスが拡散によって通過できるほどに薄
く形成してもよい。On this thin film heater, a thin film of zirconia solid electrolyte sandwiching electrodes on both sides is formed in close contact. Then, a through hole communicating with the hole of the substrate is formed in the thin film heater and the electrically insulating thin film so that one of these electrodes is exposed to the test gas. In order to obtain the limiting current characteristics, a hole formed in the substrate is closed by the electrical insulator thin film on the upper side and a blocking member on the lower side, and the test gas is filled in either of the electrical insulator thin film or the blocking member. Small holes can be drilled for diffusion. Alternatively, one of the electrodes sandwiching the zirconia solid electrolyte may be formed so thin that the gas can pass by diffusion.
【０００８】[0008]
【実施例】実施例について図面を参照して説明すると、
図１において、シリコン基板１０の上に熱酸化によりSi
O2の膜１１を形成し、そのSiO2の膜の一部をフォトエッ
チングにより除去し、窓１２をあける。符号１３は窓１
２の中心に取り残されたSiO2の膜である。EXAMPLES Examples will be described with reference to the drawings.
In FIG. 1, Si is formed on the silicon substrate 10 by thermal oxidation.
A film 11 of O 2 is formed, a part of the film of SiO 2 is removed by photoetching, and a window 12 is opened. Reference numeral 13 is window 1
It is a SiO 2 film left in the center of 2 .
【０００９】この窓１２からシリコン基板１０に塗布拡
散剤を用いてホウ素を高濃度（密度は平均で３×１０20
／cm3程度）に熱拡散し（例えば、１２００℃、２時
間）、図２に示すように、高濃度ホウ素添加単結晶シリ
コンからなる薄膜ヒータ１４を形成する。A high concentration of boron (the density is 3 × 10 20 on average) is applied from the window 12 to the silicon substrate 10 using a coating diffusing agent.
/ Cm 3 or so) to thermally diffused (e.g., 1200 ° C., 2 hours), as shown in FIG. 2, to form a thin film heater 14 made of a high concentration boron-added single crystal silicon.
【００１０】次いで、SiO2膜１１を除去し、スパッタリ
ングの方法で、改めて、表裏の全面にSiO2の膜を形成す
る。スパッタリングに代えてＣＶＤ（化学的気相成長
法）や熱酸化の方法も使える。SiO2の膜はSi3N4膜でも
よい。そして、図３に示すように、表面のSiO2膜１５に
窓１７をあけ、裏面のSiO2の膜１６にも窓１８をあけ
る。SiO2の膜に窓をあけるのは、いずれも、フォトエッ
チングの手法が使える。Then, the SiO 2 film 11 is removed, and a SiO 2 film is formed again on the entire front and back surfaces by a sputtering method. Instead of sputtering, CVD (chemical vapor deposition) or thermal oxidation can also be used. The SiO 2 film may be a Si 3 N 4 film. Then, as shown in FIG. 3, a window 17 is opened in the SiO 2 film 15 on the front surface, and a window 18 is also opened in the SiO 2 film 16 on the back surface. A photo-etching method can be used to open a window in the SiO 2 film.
【００１１】そして、窓１７の上にセンサ本体２０を形
成する（図４、図５）。まず、窓１７から覗いているシ
リコン基板１０および窓１７の周囲のSiO2膜１５に白金
をスパッタして薄膜の電極２１をつくる。スパッタは真
空度の低い環境で行ない、電極２１を多孔性に形成する
ことが肝要である。この電極２１の上に安定化ジルコニ
ア固体電解質の薄膜２２をスッパタ成形する。厚さは５
０００オングストロームほどにする。さらにその上に同
じように白金をスパッタし、多孔性電極２３を形成す
る。Then, the sensor body 20 is formed on the window 17 (FIGS. 4 and 5). First, a thin film electrode 21 is formed by sputtering platinum on the silicon substrate 10 looking through the window 17 and the SiO 2 film 15 around the window 17. It is important that the sputtering is performed in an environment with a low degree of vacuum to form the electrode 21 in a porous state. A thin film 22 of the stabilized zirconia solid electrolyte is sputter-molded on the electrode 21. Thickness is 5
Make it about 000 angstroms. Further, platinum is similarly sputtered thereon to form the porous electrode 23.
【００１２】薄膜ヒータ１４には電極２５，２６を付け
る。（図５）。次いで、異方性エッチング液を用いて、
シリコン基板１０を裏面の窓１８からエッチする。シリ
コン基板１０は表面が（１００）面になっており、異方
性エッチング液は（１１１）面をほとんど侵さないの
で、図６に示すように、断面が逆Ｖ断面の穴２７が形成
できる。穴２７の側壁は（１１１）面である。異方性エ
ッチング液には、例えば、ヒドラジンと水の１対１水溶
液を用いる。Electrodes 25 and 26 are attached to the thin film heater 14. (Fig. 5). Then, using an anisotropic etching solution,
The silicon substrate 10 is etched through the window 18 on the back surface. Since the surface of the silicon substrate 10 is the (100) plane and the anisotropic etching liquid hardly invades the (111) plane, a hole 27 having an inverted V cross section can be formed as shown in FIG. The side wall of the hole 27 is the (111) plane. As the anisotropic etching solution, for example, a 1: 1 aqueous solution of hydrazine and water is used.
【００１３】エッチングにより穴２７が形成されると、
薄膜ヒータ１４は穴２７の上に位置している部分１５ａ
のＳｉＯ２膜に張り付いた格好になる。そして、薄膜ヒ
ータ１４の中央に透孔２８ができ、この孔を通してセン
サ本体２０が穴２７に臨むようになる。被検ガスが穴２
７に自由に流入するのを制限するために、穴の下側に閉
塞部材２９を張り付け、これに小孔（ガスの拡散孔）３
０をあけておく。閉塞部材２９に小孔をあけないで、図
５に鎖線で示すように、穴の上のＳｉＯ２膜１５に小孔
３１あけてもよい。図３でＳｉＯ２膜１５に窓１７をあ
けたが、小孔３１はこの段階であけてしまう。When the holes 27 are formed by etching,
The thin film heater 14 has a portion 15a located above the hole 27.
It looks like it sticks to the SiO 2 film. A through hole 28 is formed in the center of the thin film heater 14, and the sensor body 20 faces the hole 27 through this hole. The test gas is hole 2
In order to restrict the free inflow into 7, the closing member 29 is attached to the lower side of the hole, and the small hole (gas diffusion hole) 3
Leave 0 open. Instead of forming a small hole in the closing member 29 , a small hole 31 may be formed in the SiO 2 film 15 above the hole as shown by a chain line in FIG. Although the window 17 is opened in the SiO 2 film 15 in FIG. 3, the small hole 31 is opened at this stage.
【００１４】この酸素センサの作用であるが、薄膜ヒー
タ１４に電流を流すと、ジュール熱を発生し、密着して
いるジルコニア固体電解質２２が加熱される。薄膜ヒー
タ１４はSiO2膜１５に支持されており、基板１０に熱が
逃げないので、消費電力は小さい。With respect to the function of this oxygen sensor, when a current is passed through the thin film heater 14, Joule heat is generated, and the zirconia solid electrolyte 22 that is in close contact is heated. Since the thin film heater 14 is supported by the SiO 2 film 15 and heat does not escape to the substrate 10, the power consumption is small.
【００１５】こうしてセンサを５００℃ほどに加熱して
おいて、図６に示すように、電極間に電圧を印加する
と、ポンピング作用によりジルコニア固体電解質内で酸
素イオンをキャリアとする電流が流れ、電流の大きさか
ら被検ガスの酸素濃度が測定される。Thus, when the sensor is heated to about 500 ° C. and a voltage is applied between the electrodes as shown in FIG. 6, a current using oxygen ions as carriers in the zirconia solid electrolyte flows due to the pumping action, and the current flows. The oxygen concentration of the test gas is measured from the size of the.
【００１６】ガスの自由な通過を制限するために、上述
の実施例では穴２７を閉塞部材２９で塞ぎ、拡散孔３
０，３１をあけたが、こうする代りに、一方の電極２１
をガスが拡散によって通過できるほどに薄く、例えば１
０００オングストローム以下の白金電極で形成してもよ
い。液晶の透明電極に使われているＩＴＯ（インジュウ
ム−スズ酸化物）を用いてもよい。この場合、穴２７は
開放してもよいので、図５に鎖線で示すように、SiO2膜
１５に長孔３２をあけて、薄膜ヒータ１４を支えている
部分１５ａのSiO2膜を架橋状にしてもよい。こうすれ
ば、SiO2膜を介して熱が逃げにくくなる。In order to limit the free passage of gas, the hole 27 is closed by the closing member 29 in the above-mentioned embodiment, and the diffusion hole 3 is formed.
0 and 31 are opened, but instead of this, one electrode 21
Thin enough to allow the gas to pass through by diffusion, eg 1
You may form with the platinum electrode of 000 angstroms or less. ITO (indium-tin oxide) used for transparent electrodes of liquid crystals may be used. In this case, since the hole 27 may be opened, as shown by the chain line in FIG. 5, a long hole 32 is formed in the SiO 2 film 15 to cross-link the SiO 2 film in the portion 15 a supporting the thin film heater 14. You may This makes it difficult for heat to escape through the SiO 2 film.
【００１７】[0017]
【発明の効果】以上説明したように、この発明の酸素セ
ンサは次の効果がある。請求項１の酸素センサは、基板
から浮いた薄膜ヒータに、両面を電極で挟んだジルコニ
ア固体電解質の薄膜を密着形成したので、ジルコニア固
体電解質が薄膜ヒータで直に加熱され、ヒータから基板
に熱が逃げることがないので、消費電力を小さくするこ
とができる。また、薄膜ヒータを面状ヒータとし、しか
も、薄膜面状ヒータと電気絶縁体薄膜に、電極の一方が
被検ガスに晒されるようにする透孔２８を設けたので、
ジルコニア固体電解質の酸素イオンが実際に通過する領
域を周囲から加熱し、均一な温度に保つことができる。
請求項２のの酸素センサは、基板にあけた穴の下側を閉
塞部材で塞ぎ、穴の上側を覆っている電気絶縁体被膜に
被検ガスの拡散孔をあけものであり、高精度で微細な拡
散孔が容易に形成でき、しかも、簡単な構成で限界電流
特性を得ることができる。 As described above, the oxygen sensor of the present invention has the following effects. In the oxygen sensor according to claim 1, the thin film heater of the zirconia solid electrolyte having both surfaces sandwiched by electrodes is closely formed on the thin film heater floating from the substrate. Since it does not escape, power consumption can be reduced. Also, the thin film heater is a planar heater,
Also, one of the electrodes is attached to the thin-film planar heater and the electrical insulator thin film.
Since the through hole 28 is provided so as to be exposed to the test gas,
The area where oxygen ions of the zirconia solid electrolyte actually pass through
The zone can be heated from the ambient and kept at a uniform temperature.
The oxygen sensor according to claim 2 closes the lower side of the hole formed in the substrate.
The electrical insulation film that covers the upper side of the hole
The test gas is provided with a diffusion hole for high precision and fine spreading.
The holes can be easily formed, and the limiting current can be achieved with a simple structure.
The characteristics can be obtained.
【００１８】請求項３の酸素センサは、穴の下側を閉塞
部材で塞ぎ、この閉塞部材または穴の上側を覆っている
電気絶縁体被膜のいずれかに被検ガスの拡散孔をあけた
ものであり、簡単な構成で限界電流特性を得ることがで
きる。また、該穴はシリコン単結晶基板に異方性エッチ
ングにより形成される（１１１）面で囲まれた穴とした
ので、穴の空間寸法を正確に作ることができ、酸素セン
サの感度、精度の歩留りを向上できる効果がある。 請求
項４の酸素センサは、陰極となる電極が、厚み方向にガ
スが拡散によって通過して限界電流形にできるほどに緻
密で、かつ、薄く形成されているので、電極の厚みを薄
くでき、したがって薄膜ヒータの熱容量を小さくするこ
とが可能である。 In the oxygen sensor of claim 3, the lower side of the hole is closed.
Blocked with a member and covers the upper side of this block member or hole
A diffusion hole for the test gas was opened in one of the electrical insulator coatings.
It is possible to obtain the limiting current characteristics with a simple configuration.
Wear. Also, the holes are anisotropically etched in the silicon single crystal substrate.
A hole surrounded by the (111) plane formed by
Therefore, the space dimension of the hole can be made accurately, and the oxygen sensor
It has the effect of improving the sensitivity and yield of precision. Claim
In the oxygen sensor of Item 4, the electrode serving as the cathode is
So that it passes through diffusion to form a limiting current type
Since it is dense and thin, the thickness of the electrode can be reduced.
Therefore, the heat capacity of the thin film heater can be reduced.
And are possible.
【図１】酸素センサの一製造過程を示すもので、SiO2膜
に窓をあけた状態の斜視図である。FIG. 1 is a perspective view showing a process of manufacturing an oxygen sensor and showing a state in which a window is opened in a SiO 2 film.
【図２】同じく、SiO2膜の窓からホウ素を拡散して薄膜
ヒータを形成した状態の断面図である。FIG. 2 is a sectional view showing a state in which boron is diffused through a window of a SiO 2 film to form a thin film heater.
【図３】同じく、基板に改めてSiO2膜を形成した状態の
断面図である。FIG. 3 is a sectional view showing a state in which an SiO 2 film is formed again on the substrate.
【図４】同じく、SiO2膜上にセンサ部を形成した状態の
断面図である。FIG. 4 is likewise a cross-sectional view of a state in which a sensor portion is formed on a SiO 2 film.
【図５】でき上がった酸素センサの平面図である。FIG. 5 is a plan view of the completed oxygen sensor.
【図６】同じく酸素センサの断面図である。FIG. 6 is a sectional view of the oxygen sensor of the same.
１０ シリコン基板 １４ 薄膜ヒータ １５ SiO2 膜 １５ａ 穴の上の部分のSiO2 膜 ２１ 電極 ２２ ジルコニア固体電解質の薄膜 ２３ 電極 ２７ 穴 ２８ 透孔 ２９ 閉塞部材 ３０，３１ 拡散孔（小孔）10 a silicon substrate 14 the thin film heater 15 SiO 2 film of the upper part of 15a holes SiO 2 film 21 electrode 22 zirconia solid electrolyte film 23 electrodes 27 hole 28 hole 29 closure members 30 and 31 diffusion holes (small holes)
Claims (4)
薄膜（１５）であって、該基板にあけられた穴（２７）
の上に位置している部分（１５ａ）に薄膜ヒータ（１
４）が密着形成され、ガスを透過する電極（２１，２
３）で両側を挟んだジルコニア固体電解質の薄膜（２
２）が該薄膜ヒータ上にさらに密着形成されており、該
電極の一方（２１）が被検ガスにさらされるようにし、
さらに被験ガスの自由な通過を制限する拡散制限手段を
持った酸素センサにおいて、該薄膜ヒータを薄膜面状ヒ
ータとし、該薄膜面状ヒータが該電気絶縁体薄膜で支持
されるようにし、該薄膜面状ヒータのほぼ中央部で、該
薄膜面状ヒータと該電気絶縁体薄膜を貫通して該穴と連
通する一つの透孔（２８）があいていており、該透孔か
ら該ジルコニア固体電解質を挟んでいる電極のうち、陰
極となる電極（２１）が覗いていることを特徴とする酸
素センサ。1. An electrical insulator thin film (15) formed on a substrate (10), the hole (27) formed in the substrate.
The thin film heater (1
4) are formed in close contact with each other, and the electrodes (21, 21,
3) A thin film of zirconia solid electrolyte sandwiching both sides (2)
2) is further closely formed on the thin film heater so that one of the electrodes (21) is exposed to the test gas ,
In addition, diffusion limiting means to limit the free passage of the test gas
In the oxygen sensor, the thin-film heater is a thin-film planar heater, the thin-film planar heater is supported by the electrical insulator thin film, and the thin-film planar heater is provided at substantially the center of the thin-film planar heater. And one through hole (28) penetrating the electrical insulator thin film and communicating with the hole, and of the electrodes sandwiching the zirconia solid electrolyte through the through hole, the electrode serving as the cathode (21 ) Is looking into the oxygen sensor.
絶縁体薄膜で、下側を閉塞部材（２９）でそれぞれ塞
ぎ、該電気絶縁体薄膜に被検ガスが拡散するための小孔
（３１）をあけてなる請求項１に記載の酸素センサ。2. The diffusion limiting means blocks the upper side of the hole with the electrical insulator thin film and the lower side with a blocking member (29).
Technique, the oxygen sensor according to claim 1, the test gas in the electric insulating thin film is made at a small hole (31) for diffusing.
絶縁体薄膜で、下側を閉塞部材（２９）でそれぞれ塞
ぎ、該基板をシリコン単結晶基板とし、該穴は該シリコ
ン単結晶基板に異方性エッチングにより形成される（１
１１）面で囲まれた穴とし、該閉塞部材に被検ガスが拡
散するための小孔（３０）をあけてなる請求項１に記載
の酸素センサ。3. The diffusion limiting means closes the upper side of the hole with the electrical insulator thin film and the lower side with a closing member (29).
The silicon single crystal substrate is used as the substrate, and the holes are formed in the silicon single crystal substrate by anisotropic etching (1
And a hole surrounded by 11) surface, the oxygen sensor according to claim 1, the test gas into the closure member is spaced small holes (30) for diffusing.
解質の薄膜を挟んでいる電極のうち、陰極となる電極
（２１）を、この電極の厚み方向にガスが拡散によって
通過して限界電流形にできるほどに緻密で、かつ、薄く
形成してなる請求項１、２または３に記載の酸素セン
サ。4. The limiting current type in which the diffusion limiting means passes through an electrode (21) serving as a cathode among the electrodes sandwiching the thin film of zirconia solid electrolyte in the thickness direction of the electrode by diffusion. The oxygen sensor according to claim 1, 2 or 3, wherein the oxygen sensor is as dense and thin as possible .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3349715A JP2553980B2 (en) | 1991-12-07 | 1991-12-07 | Oxygen sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3349715A JP2553980B2 (en) | 1991-12-07 | 1991-12-07 | Oxygen sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05157729A JPH05157729A (en) | 1993-06-25 |
| JP2553980B2 true JP2553980B2 (en) | 1996-11-13 |
Family
ID=18405610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3349715A Expired - Fee Related JP2553980B2 (en) | 1991-12-07 | 1991-12-07 | Oxygen sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2553980B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4074368B2 (en) * | 1998-02-27 | 2008-04-09 | 北陸電気工業株式会社 | Heat generation type thin film element sensor and manufacturing method thereof |
| JP2014196995A (en) * | 2013-03-08 | 2014-10-16 | ローム株式会社 | Limiting current type gas sensor, method for manufacturing limiting current type gas sensor and sensor network system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4919838A (en) * | 1972-06-13 | 1974-02-21 | ||
| JPS59166854A (en) * | 1983-03-14 | 1984-09-20 | Toyota Central Res & Dev Lab Inc | Limiting current type oxygen sensor |
| JPS61147154A (en) * | 1984-12-20 | 1986-07-04 | Matsushita Electric Ind Co Ltd | thin film oxygen sensor |
| JPS63259459A (en) * | 1987-04-17 | 1988-10-26 | Toshiba Corp | Limiting current type gas sensor |
-
1991
- 1991-12-07 JP JP3349715A patent/JP2553980B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05157729A (en) | 1993-06-25 |
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