JP2554069B2 - Magnetoresistive sensor - Google Patents
Magnetoresistive sensorInfo
- Publication number
- JP2554069B2 JP2554069B2 JP62028098A JP2809887A JP2554069B2 JP 2554069 B2 JP2554069 B2 JP 2554069B2 JP 62028098 A JP62028098 A JP 62028098A JP 2809887 A JP2809887 A JP 2809887A JP 2554069 B2 JP2554069 B2 JP 2554069B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- magnetoresistive effect
- sensor
- effect element
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 description 72
- 230000000694 effects Effects 0.000 description 31
- 238000001514 detection method Methods 0.000 description 22
- 239000010408 film Substances 0.000 description 22
- 230000001681 protective effect Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 14
- 230000005291 magnetic effect Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000227 grinding Methods 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910017709 Ni Co Inorganic materials 0.000 description 3
- 229910003267 Ni-Co Inorganic materials 0.000 description 3
- 229910003271 Ni-Fe Inorganic materials 0.000 description 3
- 229910003262 Ni‐Co Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007688 edging Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
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- 230000008961 swelling Effects 0.000 description 1
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- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は基板の一方の表面に磁気抵抗効果素子として
の磁性薄膜を形成して構成される磁気抵抗効果センサに
関するものである。The present invention relates to a magnetoresistive effect sensor formed by forming a magnetic thin film as a magnetoresistive effect element on one surface of a substrate.
［従来の技術］ この種の磁気抵抗効果センサ（以下MRセンサという）
はNi−Fe,Ni−Coなどの強磁性合金薄膜からなる磁気抵
抗効果素子（以下MR素子という）の抵抗変化により印加
磁界の変化を検出する。従ってこのMRセンサでは被検出
体に対して着磁を施す等するだけでよく、LEDなどの消
耗する光源が不可欠なフォトセンサなどよりも構成が簡
単で耐久性にも優れている。[Prior Art] This type of magnetoresistive effect sensor (hereinafter referred to as MR sensor)
Detects changes in the applied magnetic field by changing the resistance of a magnetoresistive effect element (hereinafter referred to as MR element) made of a ferromagnetic alloy thin film such as Ni-Fe or Ni-Co. Therefore, with this MR sensor, it is only necessary to magnetize the object to be detected, etc., and the MR sensor has a simpler structure and is superior in durability to photosensors and the like in which a consumable light source such as an LED is essential.
この種のMRセンサの従来構造によれば、基板上にMR素
子が形成され、MR素子の電極に出力信号を取り出すため
のリード線が半田付けまたはそのリード線のパターンを
設けたフレキシブルプリント基板を圧接して接続され、
さらにこの接続部分を含めてMR素子を覆って熱、水分、
酸、塩基などからMR素子を保護する絶縁性の保護膜が形
成される。そしてMRセンサはMR素子を形成した側の表面
を検出面として被検出体に対向して磁界検出を行なうよ
うになっている。According to the conventional structure of this type of MR sensor, a flexible printed circuit board in which an MR element is formed on a substrate and a lead wire for extracting an output signal to the electrode of the MR element is soldered or provided with a pattern of the lead wire is used. Connected by pressure contact,
Furthermore, covering the MR element including this connection part, heat, moisture,
An insulating protective film that protects the MR element from acids and bases is formed. The MR sensor is configured to face the object to be detected and detect the magnetic field with the surface on the side where the MR element is formed as the detection surface.
［発明が解決しようとする問題点］ ところでFG（周波数信号発生）センサ、磁気式エンコ
ーダに代表される磁気センサにおいて磁気記録パターン
を持つ被検出体を上述のMRセンサを検出体として用いて
検出する場合には、ホール素子に比べると微小な磁界変
化を正確に検出できるというMR素子の特性を生かしてセ
ンサとして満足できる出力を得るために、検出体である
処のMR素子を被検出体の磁気記録パターンに充分狭い至
近間隔まで近づける必要がある。[Problems to be Solved by the Invention] By the way, in a magnetic sensor typified by an FG (frequency signal generation) sensor and a magnetic encoder, an object to be detected having a magnetic recording pattern is detected by using the MR sensor as a detection object. In this case, in order to obtain a satisfactory output as a sensor by taking advantage of the MR element's characteristic of being able to detect a minute magnetic field change more accurately than a Hall element, the MR element as the detection object is used to detect the magnetic field of the detection object. It is necessary to bring the recording pattern close enough to a close distance.
上述のように、従来のMRセンサではMR素子を設けた側
の表面を検出面として被検出体に対向させて検出を行な
っている。As described above, in the conventional MR sensor, the surface on which the MR element is provided is used as the detection surface to face the object to be detected.
しかし、上述のようなMR素子の従来構造では、センサ
の検出面においてMR素子の電極とリード線の半田付けな
どによる接続部分が多少なりとも盛り上がることは避け
られない。However, in the conventional structure of the MR element as described above, it is unavoidable that the connection between the MR element electrode and the lead wire is soldered to the detection surface of the sensor.
その結果、この盛り上がり部分の存在によってMRセン
サを被検出体に近づけられる距離に限界が生じるという
問題が起こる。また上記至近間隔を確保するためには邪
魔な接続部分からMR素子の感知部をある程度以上離して
設けねばならない。これによりMR素子のパターン設計の
自由度が制限され、それに伴なってMRセンサおよび被検
出体の小型化、コストダウンが制限される。さらに上記
至近間隔を確保するためにはMR素子の保護膜を厚くでき
ないためMRセンサの信頼性が低下するなど、種々の問題
があった。As a result, there is a problem that the presence of this raised portion limits the distance in which the MR sensor can be brought close to the object to be detected. In addition, in order to secure the above-mentioned close distance, the sensing part of the MR element must be separated from the interfering connection part to some extent. This limits the degree of freedom in the pattern design of the MR element, which in turn limits the size reduction and cost reduction of the MR sensor and the detected object. Further, in order to secure the above-mentioned close distance, the protective film of the MR element cannot be made thick, so that there are various problems such as deterioration of reliability of the MR sensor.
［問題点を解決するための手段］ このような問題点を解決するため、本発明によれば、
基板の一方の表面に磁気抵抗効果素子としての強磁性体
薄膜を形成して構成されるとともに、所定の着磁パター
ンが施された被検出体に対向配置され、この被検出体と
相対的に移動させて用いる磁気抵抗効果センサにおい
て、前記基板の磁気抵抗効果素子形成面側に、前記磁気
抵抗効果素子を覆う保護膜が形成されるとともに、前記
磁気抵抗効果素子と外部導出用のリード線とを接続する
接続部が設けられ、前記基板の磁気抵抗効果素子形成面
の少なくとも磁気抵抗効果素子の形成領域の裏面が前記
被検出体に対向する検出面とされるべく、前記保護膜の
厚さに比して前記基板の厚さが小さく構成されている構
造を採用した。[Means for Solving the Problems] In order to solve such problems, according to the present invention,
A ferromagnetic thin film as a magnetoresistive effect element is formed on one surface of the substrate, and it is arranged to face an object to be detected on which a predetermined magnetization pattern is applied, and relatively to the object to be detected. In the magnetoresistive effect sensor to be used by moving, a protective film covering the magnetoresistive effect element is formed on the magnetoresistive effect element formation surface side of the substrate, and the magnetoresistive effect element and a lead wire for external lead-out. The thickness of the protective film is such that a connection portion for connecting the magnetoresistive effect element is formed on the substrate, and at least the back surface of the magnetoresistive effect element formation surface of the substrate is a detection surface facing the object to be detected. In comparison with the above, a structure is adopted in which the thickness of the substrate is small.
［作 用］ 本発明による磁気抵抗効果センサの構造によれば、基
板の磁気抵抗効果素子形成面の裏面を検出面として磁界
検出を行ない、磁気抵抗効果素子の信号取り出し用の電
極とリード線の接続部分は素子側であって検出面側では
ないため、先述した接続部分の盛り上がりによる問題を
避けることができる。[Operation] According to the structure of the magnetoresistive effect sensor of the present invention, magnetic field detection is performed by using the back surface of the surface of the substrate on which the magnetoresistive effect element is formed as a detection surface, and the electrodes and lead wires for signal extraction of the magnetoresistive effect element are detected. Since the connection portion is on the element side and not on the detection surface side, it is possible to avoid the above-mentioned problem caused by the rise of the connection portion.
［実施例］ 以下、添付した図を参照して本発明の実施例の詳細を
説明する。[Examples] Hereinafter, details of examples of the present invention will be described with reference to the accompanying drawings.
第１実施例 第１図（Ａ）〜（Ｄ）は本発明の第１実施例によるMR
センサの検出部本体の構造と製造工程を説明するもので
ある。First Embodiment FIGS. 1A to 1D show an MR according to a first embodiment of the present invention.
The structure and manufacturing process of the detection unit main body of the sensor will be described.
まず、MRセンサの検出部の完成品の断面を概略的に示
す第１図（Ｄ）を参照してMRセンサの構造を説明する。First, the structure of the MR sensor will be described with reference to FIG. 1 (D) schematically showing the cross section of the finished product of the detection part of the MR sensor.
第１図（Ｄ）に示すようにMRセンサは基板１の図中上
面に薄膜としてのMR素子２を設け、さらにその上に保護
膜３を設けた構造となっている。As shown in FIG. 1 (D), the MR sensor has a structure in which an MR element 2 as a thin film is provided on the upper surface of the substrate 1 in the figure, and a protective film 3 is further provided thereon.
基板１はMRセンサに使用するのにさしつかえない材料
で、かつ研削、研磨、エッチングなどの加工が可能な材
料、例えば無アルカリガラスなどから形成される。The substrate 1 is made of a material which can be used for the MR sensor and which can be processed by grinding, polishing, etching or the like, for example, non-alkali glass.
またMR素子２は、例えばNi−Fe,Ni−Coなどの強磁性
合金の薄膜として、ジグザク状に折り返した形状に形成
される。図示していないがMR素子２には検出出力信号を
取り出すための電極が形成され、この電極には外部導出
用のリード線が半田付けやプリント基板の圧接により接
続される。The MR element 2 is formed as a thin film of a ferromagnetic alloy such as Ni-Fe or Ni-Co, and is formed in a zigzag shape. Although not shown, an electrode for extracting a detection output signal is formed on the MR element 2, and a lead wire for external lead-out is connected to this electrode by soldering or pressure contact with a printed board.
また保護膜３はMR素子２を熱、水分、酸、塩基などか
ら保護するものであり、例えばSiOや有機系樹脂から形
成される。The protective film 3 protects the MR element 2 from heat, moisture, acid, base, etc., and is made of, for example, SiO or an organic resin.
ここで本実施例のMRセンサでは本発明に関わる構造と
して、基板１のMR素子形成面の裏面を不図示の被検出体
に対向する検出面４として、基板１を介しても充分な検
出出力が得られる磁界検出を行なえるように、基板１の
少なくともMR素子２の形成領域の厚さt2を充分小さく形
成するものとする。すなわち本実施例のMRセンサによれ
ば基板１のMR素子形成面の裏面を検出面４として磁界検
出を行なう。Here, in the MR sensor of the present embodiment, as a structure related to the present invention, a sufficient detection output is obtained even through the substrate 1 by using the back surface of the MR element forming surface of the substrate 1 as a detection surface 4 facing an unillustrated object to be detected. The thickness t2 of at least the region where the MR element 2 is formed on the substrate 1 is formed to be sufficiently small so that the magnetic field can be detected. That is, according to the MR sensor of this embodiment, the back surface of the MR element formation surface of the substrate 1 is used as the detection surface 4 to detect the magnetic field.
このようなMRセンサの構造によれば、MR素子２の信号
取り出し用の電極とリード線の接続部分はMR素子２側で
あって検出面４側ではないため、先述した従来のような
上記接続部分の盛り上がりよる問題を避けることができ
る。すなわち盛り上がりによるMR素子と被検出体の間隔
の制限およびMR素子のパターン設計の制限がなくなり、
MR素子の被検出体に充分接近させて微小な磁界変化を正
確に検出できるとともに、上記パターン設計の自由さに
よりMRセンサの小型化とこれによるコストダウンを図れ
る。また保護膜３の厚さの制限もなくなり充分厚くで
き、その厚さをMR素子２を確実に保護できるものとして
MRセンサの信頼性を向上できる。保護膜３の形成も容易
になる。また上記電極とリード線の半田付けなどによる
接続も、盛り上がりの制限がなくなるため容易になる。According to such a structure of the MR sensor, the connecting portion between the signal taking-out electrode of the MR element 2 and the lead wire is on the MR element 2 side and not on the detection surface 4 side. It is possible to avoid problems caused by rising parts. In other words, there is no restriction on the gap between the MR element and the detected object due to swelling and restriction on the pattern design of the MR element,
It is possible to accurately detect minute magnetic field changes by bringing the MR element close enough to the object to be detected, and to reduce the size and cost of the MR sensor due to the freedom of pattern design. Also, the thickness of the protective film 3 is not limited and can be made sufficiently thick, and the thickness can be surely protected for the MR element 2.
The reliability of the MR sensor can be improved. The formation of the protective film 3 also becomes easy. Also, the connection between the electrode and the lead wire by soldering or the like is facilitated because there is no limitation on the rise.
次に本実施例のMRセンサの製造工程を説明する。 Next, the manufacturing process of the MR sensor of this embodiment will be described.
まず第１図（Ａ）に示すように基板１として厚さt1が
第１図（Ｄ）の仕上げの厚さt2より充分大きなものを先
述のように例えば無アルカリガラスなどから形成する。First, as shown in FIG. 1 (A), a substrate 1 having a thickness t1 sufficiently larger than the finished thickness t2 of FIG. 1 (D) is formed from, for example, non-alkali glass as described above.
次に第１図（Ｂ）に示すように基板１の図中上面にMR
素子２を形成する。これはまずNi−Fe,Ni−Coなどの強
磁性合金薄膜を蒸着などにより成膜した後に、この薄膜
をエッチングなどによりMR素子の形状に加工して行な
う。Next, as shown in FIG. 1 (B), MR is formed on the upper surface of the substrate 1 in the figure.
The element 2 is formed. This is performed by first forming a ferromagnetic alloy thin film such as Ni-Fe or Ni-Co by vapor deposition and then processing the thin film into the shape of the MR element by etching or the like.
次に、MR素子２の不図示の信号取り出し用電極に不図
示のリード線を半田付けなどで接続する。Next, a lead wire (not shown) is connected to a signal extracting electrode (not shown) of the MR element 2 by soldering or the like.
次に、第１図（Ｃ）に示すようにMR素子２上に保護膜
３をSiO、有機系樹脂あるいはガラスなどから、真空薄
膜形成技術、塗布あるいは溶着などで形成する。Next, as shown in FIG. 1 (C), a protective film 3 is formed on the MR element 2 from SiO, an organic resin, glass or the like by a vacuum thin film forming technique, coating or welding.
次に、第１図（Ｄ）に点線で示すように、基板１の少
なくともMR素子形成領域において基板１のMR素子形成面
の裏面側部分を除去して基板１の厚さをt1からt2に薄く
する。この除去はラップ研削や平面研削などの研削、研
磨およびウエットあるいはドライエッチングなどのいず
れかの単一工程で行なってもよいし、あるいはこれらを
組み合せた複数工程により行なってもよい。Next, as indicated by a dotted line in FIG. 1D, the back surface side portion of the MR element formation surface of the substrate 1 is removed at least in the MR element formation region of the substrate 1 to change the thickness of the substrate 1 from t1 to t2. make it thin. This removal may be performed in any single step such as grinding such as lapping or surface grinding, polishing, and wet or dry etching, or may be performed in a plurality of steps in combination thereof.
なお、この基板１の裏面側部分の除去を行なうこと
で、加工の応力や保護膜３との応力バランスの変化など
が原因で基板１に反りが発生することも考えられる。こ
の反りは保護膜３の材料を適当に選択することや、保護
膜３の積層ないし厚膜化などにより抑えるものとする。It should be noted that the removal of the back surface side portion of the substrate 1 may cause the substrate 1 to warp due to processing stress, a change in stress balance with the protective film 3, and the like. This warp can be suppressed by appropriately selecting the material of the protective film 3 or by laminating or thickening the protective film 3.
また、基板１の最初の厚さt1は保護膜３の形成までの
工程を行なう際に作業上支障のないようにある程度以上
の厚さとする。Further, the initial thickness t1 of the substrate 1 is set to a certain thickness or more so as not to hinder the work when the steps up to the formation of the protective film 3 are performed.
以上のような簡単な工程により、本実施例のMRセンサ
を安価に製造できる。The MR sensor of this embodiment can be manufactured at low cost through the above-described simple steps.
ところで、上述した工程で最後に基板１の裏面側部分
を除去する工程では、基板１の仕上げの厚さt2を正確に
決めるために研削、研磨、エッジングなどによる同工程
の除去速度を正確に把握しておき、同工程の終了点を正
確に決める必要がある。By the way, in the step of finally removing the back surface side portion of the substrate 1 in the above-mentioned step, in order to accurately determine the finish thickness t2 of the substrate 1, the removal rate of the same step by grinding, polishing, edging, etc. is accurately grasped. However, it is necessary to accurately determine the end point of the process.
これには第２図（Ａ）〜（Ｅ）に示すような工程によ
り、以下のようにして上記の工程終了点を検出し、正確
に決める方法が考えられる。For this, a method of detecting and accurately determining the above process end point by the process as shown in FIGS. 2A to 2E can be considered.
すなわち、まず第２図（Ａ）〜（Ｃ）に示すように第
１図（Ａ）〜（Ｃ）と全く同様の工程によって基板１上
にMR素子２と保護膜３を形成した後に、上記工程終了点
検出用として第２図（Ｄ）に符号５で示す溝を保護膜３
側から基板１に対して仕上げの厚さt2に相当する深さま
で機械加工により形成する。この際の溝５の基板１に対
する深さ（＝t2）は基板１の図中上面を基準面として正
確に決める。なお、溝５は形成してMR素子の働きに支障
のない部分に形成するのは勿論である。That is, first, as shown in FIGS. 2A to 2C, the MR element 2 and the protective film 3 are formed on the substrate 1 by the same steps as in FIGS. A groove indicated by reference numeral 5 in FIG.
The substrate 1 is machined to a depth corresponding to the finished thickness t2 from the side. At this time, the depth (= t2) of the groove 5 with respect to the substrate 1 is accurately determined with the upper surface of the substrate 1 in the drawing as a reference plane. It goes without saying that the groove 5 is formed so as not to interfere with the operation of the MR element.
そして第２図（Ｅ）に示すように基板１の裏面側部分
を研削、研磨、エッチングなどにより除去するが、この
際に溝５の開口が基板１の裏面1aすなわち検出面４とな
る図中下面に現われることを検出することで工程終了点
を検出し、溝５が現われた点を終了点として工程を終了
すればよい。Then, as shown in FIG. 2 (E), the back surface side portion of the substrate 1 is removed by grinding, polishing, etching or the like. At this time, the opening of the groove 5 becomes the back surface 1a of the substrate 1, that is, the detection surface 4. The process end point may be detected by detecting the appearance on the lower surface, and the process may be ended with the point where the groove 5 appears as the end point.
このようにして工程終了点を検出し、基板１の仕上げ
の厚さt2を正確に決め、均一な特性のMRセンサを製造で
きる。In this way, the process end point is detected, the finishing thickness t2 of the substrate 1 is accurately determined, and an MR sensor having uniform characteristics can be manufactured.
なお、これと同様にして溝を利用して研削、研磨ある
いはエッチングなどによる基板１の除去速度を予め求め
ることがき、これにより除去速度を正確に把握して基板
１の除去による厚さを除去の加工時間により管理でき、
効率良く除去工程を行なえる。Note that, similarly to this, the removal rate of the substrate 1 by grinding, polishing, etching, or the like can be obtained in advance using the groove, and by this, the removal rate can be accurately grasped and the thickness of the substrate 1 removed can be removed. It can be managed by processing time,
The removal process can be performed efficiently.
第２実施例 次に、第３図（Ａ）〜（Ｄ）は本発明の第２実施例に
よるMRセンサの製造方法を説明するものである。Second Embodiment Next, FIGS. 3A to 3D explain a method of manufacturing an MR sensor according to a second embodiment of the present invention.
本実施例では、まずMRセンサを作製するための基板と
して、第３図（Ａ）に示すように、第１層基板７と第２
層基板８を基板全体の板厚方向に積層してなる積層構造
の基板６を用いる。基板６は第１層基板７と第２層基板
８をそれぞれ別々に形成した上で第２層基板８上に第１
層基板７を接着して作成するか、または第２層基板８上
に第１層基板７を真空薄膜形成技術を用いた物理的方法
あるいは化学気相成長や重合反応を用いた化学的方法な
どにより形成して作成する。また、第１層基板７の厚さ
は先述した基板の最終的な仕上げの厚さt2とし、第２層
基板８は以下のMR素子形成、保護膜形成において第１層
基板７を平坦に保てるように材料を選択し、厚さt1′は
t2より充分大きくするものとする。In this embodiment, first, as a substrate for manufacturing the MR sensor, as shown in FIG.
A substrate 6 having a laminated structure in which the layered substrates 8 are laminated in the plate thickness direction of the entire substrate is used. As the substrate 6, the first layer substrate 7 and the second layer substrate 8 are separately formed and then the first layer substrate 8 is formed on the second layer substrate 8.
The layer substrate 7 is formed by adhesion, or the first layer substrate 7 is formed on the second layer substrate 8 by a physical method using a vacuum thin film forming technique or a chemical method using chemical vapor deposition or polymerization reaction. Formed by. Further, the thickness of the first layer substrate 7 is the final finished thickness t2 of the substrate described above, and the second layer substrate 8 can keep the first layer substrate 7 flat in the following MR element formation and protective film formation. Select the material so that the thickness t1 'is
It should be sufficiently larger than t2.
次に第３図（Ｂ）および（Ｃ）に示すように、第１実
施例の第１図（Ｂ）および（Ｃ）の工程と全く同様にし
て基板６上にMR素子２を形成し、さらにその上に保護膜
３を形成する。Next, as shown in FIGS. 3B and 3C, the MR element 2 is formed on the substrate 6 in exactly the same manner as the steps of FIGS. 1B and 1C of the first embodiment. Further, the protective film 3 is formed thereon.
次に第３図（Ｄ）に示すように、第２層基板８を除去
してMRセンサが完成する。この除去は、基板６が第１層
基板７と第２層基板８を接着してなるものである場合は
接着剤の溶解により行なう。また、基板６が第２層基板
８上に第１層基板７を形成したものである場合には、第
２層基板８を溶解するなど、第１層基板７、MR素子３お
よび保護膜４に応力がかからない方法を用いる。Next, as shown in FIG. 3 (D), the second layer substrate 8 is removed to complete the MR sensor. This removal is performed by dissolving the adhesive when the substrate 6 is formed by adhering the first layer substrate 7 and the second layer substrate 8. Further, when the substrate 6 is the one in which the first layer substrate 7 is formed on the second layer substrate 8, the second layer substrate 8 is melted, and the first layer substrate 7, the MR element 3 and the protective film 4 are dissolved. Use a method that does not apply stress.
このような本実施例の製造工程によれば、最後の工程
の基板６の裏面側部分の除去、すなわち第２層基板８の
除去は、第１実施例の基板１の裏面側部分の除去に比べ
て応力が加わらず、破損の恐れのない方法で、簡単に効
率良く行なえる。According to such a manufacturing process of this embodiment, the removal of the back surface side portion of the substrate 6 in the final step, that is, the removal of the second layer substrate 8 is performed by removing the back surface side portion of the substrate 1 of the first embodiment. Compared to this, stress is not applied, and there is no risk of damage, and it can be performed easily and efficiently.
なお、最初に構成する基板６は２層に限らず、３層以
上の積層構造としても良い。また、基板として最後に残
す層も１層に限らず、先述のように検出可能な厚さt2に
できるならば何層でもかまわない。The substrate 6 initially formed is not limited to the two layers, and may have a laminated structure of three or more layers. Further, the last layer left as a substrate is not limited to one layer, and any number of layers may be used as long as it has a detectable thickness t2 as described above.
［発明の効果］ 以上の説明から明らかなように、本発明によれば、基
板の一方の表面に磁気抵抗効果素子としての強磁性体薄
膜を形成して構成されるとともに、所定の着磁パターン
が施された被検出体に対向配置され、この被検出体と相
対的に移動させて用いる磁気抵抗効果センサにおいて、
前記基板の磁気抵抗効果素子形成面側に、前記磁気抵抗
効果素子を覆う保護膜が形成されるとともに、前記磁気
抵抗効果素子と外部導出用のリード線とを接続する接続
部が設けられ、前記基板の磁気抵抗効果素子形成面の少
なくとも磁気抵抗効果素子の形成領域の裏面が前記被検
出体に対向する検出面とされるべく、前記保護膜の厚さ
に比して前記基板の厚さが小さく構成されている構造を
採用したので、磁気抵抗効果素子を覆う保護膜の厚さお
よび磁気抵抗効果素子とリード線との接続部の厚さを考
慮することなく、被検出体に対する磁気抵抗効果素子の
間隔を決定できるので、磁気抵抗効果素子を被検出体に
十分接近させて微少な磁界変化を正確に検出できるとと
もに、磁気抵抗効果素子のパターン設計の自由度が増
し、磁気抵抗効果センサの小型化とコストダウンが図れ
る。[Effects of the Invention] As is clear from the above description, according to the present invention, a ferromagnetic thin film as a magnetoresistive effect element is formed on one surface of a substrate, and a predetermined magnetization pattern is formed. In the magnetoresistive effect sensor, which is disposed so as to face the detected body to which is applied and is used by moving relative to the detected body,
On the magnetoresistive effect element formation surface side of the substrate, a protective film is formed to cover the magnetoresistive effect element, and a connecting portion that connects the magnetoresistive effect element and a lead wire for external lead-out is provided. In order that at least the back surface of the magnetoresistive effect element formation surface of the substrate in the magnetoresistive effect element formation region is a detection surface facing the detection object, the thickness of the substrate is smaller than that of the protective film. Since the structure is small, the magnetoresistive effect on the object to be detected can be achieved without considering the thickness of the protective film covering the magnetoresistive effect element and the thickness of the connection between the magnetoresistive effect element and the lead wire. Since the distance between the elements can be determined, the magnetoresistive effect element can be brought sufficiently close to the object to be detected to accurately detect a minute magnetic field change, and the degree of freedom in designing the pattern of the magnetoresistive effect element is increased. Miniaturization of service and cost reduction can be achieved.
また、保護膜の厚さの制限もなくなり十分厚くできる
ので、磁気抵抗効果素子を確実に保護できるものとして
磁気抵抗効果センサの信頼性を向上させることができ
る。Further, since the thickness of the protective film is not limited and can be made sufficiently thick, the reliability of the magnetoresistive effect sensor can be improved by reliably protecting the magnetoresistive effect element.
さらに、接続部の厚さの制限もなくなり、接続部の形
状が容易になるなどの優れた効果が得られる。Further, the thickness of the connecting portion is not limited, and excellent effects such as the shape of the connecting portion being facilitated can be obtained.
第１図（Ａ）から（Ｄ）は本発明の第１実施例による磁
気抵抗効果センサの製造工程と構造の説明図、第２図
（Ａ）から（Ｅ）は基板の裏面側部分除去工程の終了点
検出方法を説明する製造工程の説明図、第３図（Ａ）か
ら（Ｄ）は本発明の第２実施例による製造工程の説明図
である。 1,6……基板、２……MR素子 ３……保護膜、４……検出面 ５……工程終了点検出用の溝 ７……第１層基板、８……第２層基板FIGS. 1 (A) to 1 (D) are explanatory views of the manufacturing process and structure of the magnetoresistive effect sensor according to the first embodiment of the present invention, and FIGS. 2 (A) to 2 (E) are rear surface side partial removal processes of the substrate. FIGS. 3A to 3D are explanatory diagrams of the manufacturing process for explaining the end point detection method of FIG. 3, and FIGS. 3A to 3D are explanatory diagrams of the manufacturing process according to the second embodiment of the present invention. 1,6 ... Substrate, 2 ... MR element 3 ... Protective film, 4 ... Detecting surface 5 ... Process end point detection groove 7 ... First layer substrate, 8 ... Second layer substrate
フロントページの続き (72)発明者 後藤 博一 秩父市大字下影森1248番地 キヤノン電 子株式会社内 (72)発明者 佐野 秀人 秩父市大字下影森1248番地 キヤノン電 子株式会社内 (72)発明者 中橋 光男 秩父市大字下影森1248番地 キヤノン電 子株式会社内 (72)発明者 林 久範 秩父市大字下影森1248番地 キヤノン電 子株式会社内 (56)参考文献 特開 昭52−6513（ＪＰ，Ａ) 特開 昭55−134369（ＪＰ，Ａ) 実開 昭54−73757（ＪＰ，Ｕ)Front page continuation (72) Inventor Hirokazu Goto 1248 Shimokagemori, Chichibu-shi, Canon Electronics Co., Ltd. (72) Inventor Hideto Sano 1248 Shimokagemori, Chichibu-shi, Canon Electric Co., Ltd. (72) Invention Person Mitsuo Nakahashi 1248 Shimokagemori, Chichibu-shi, Canon Electronics Co., Ltd. (72) Inventor Hisan Hayashi 1248, Shimokagemori, Chichibu-shi, Canon Electronics Co., Ltd. (56) Reference JP-A-52-6513 (JP, JP, 65-3513) A) JP-A-55-134369 (JP, A) Actually developed 54-73757 (JP, U)
Claims (1)
ての強磁性体薄膜を形成して構成されるとともに、所定
の着磁パターンが施された被検出体に対向配置され、こ
の被検出体と相対的に移動させて用いる磁気抵抗効果セ
ンサにおいて、 前記基板の磁気抵抗効果素子形成面側に、前記磁気抵抗
効果素子を覆う保護膜が形成されるとともに、前記磁気
抵抗効果素子と外部導出用のリード線とを接続する接続
部が設けられ、 前記基板の磁気抵抗効果素子形成面の少なくとも磁気抵
抗効果素子の形成領域の裏面が前記被検出体に対向する
検出面とされるべく、前記保護膜の厚さに比して前記基
板の厚さが小さく構成されていることを特徴とする磁気
抵抗効果センサ。1. A ferromagnetic thin film as a magnetoresistive effect element is formed on one surface of a substrate, and is arranged so as to oppose an object to be detected having a predetermined magnetizing pattern. In a magnetoresistive effect sensor used by moving relative to the body, a protective film covering the magnetoresistive effect element is formed on the magnetoresistive effect element formation surface side of the substrate, and the magnetoresistive effect element and the external lead-out are formed. A connecting portion for connecting to a lead wire for use is provided, and at least the back surface of the magnetoresistive effect element forming surface of the magnetoresistive effect element forming surface of the substrate is a detection surface facing the object to be detected, A magnetoresistive effect sensor, wherein the thickness of the substrate is smaller than the thickness of the protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62028098A JP2554069B2 (en) | 1987-02-12 | 1987-02-12 | Magnetoresistive sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62028098A JP2554069B2 (en) | 1987-02-12 | 1987-02-12 | Magnetoresistive sensor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7136235A Division JP2691147B2 (en) | 1995-06-02 | 1995-06-02 | Method of manufacturing magnetoresistive effect sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63196874A JPS63196874A (en) | 1988-08-15 |
| JP2554069B2 true JP2554069B2 (en) | 1996-11-13 |
Family
ID=12239319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62028098A Expired - Lifetime JP2554069B2 (en) | 1987-02-12 | 1987-02-12 | Magnetoresistive sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2554069B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4097802A (en) * | 1975-06-30 | 1978-06-27 | International Business Machines Corporation | Magnetoresistive field sensor with a magnetic shield which prevents sensor response at fields below saturation of the shield |
| JPS631218Y2 (en) * | 1977-11-01 | 1988-01-13 | ||
| JPS55134369A (en) * | 1979-04-09 | 1980-10-20 | Nec Corp | Magnetic sensor |
-
1987
- 1987-02-12 JP JP62028098A patent/JP2554069B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63196874A (en) | 1988-08-15 |
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