JP2554445B2 - Magnetic thin film and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic thin film having excellent soft magnetic characteristics in a high frequency range and large electric resistivity and saturation magnetization, and a method for producing the same.

[0002]

2. Description of the Related Art In recent years, efforts have been actively made to increase the operating frequency of electronic equipment. However, there are no known magnetic materials used in transformers, inductors, magnetic heads, etc. that have sufficient characteristics in the high frequency range.
Therefore, there are many restrictions on the use of these components in the high frequency range. Generally, in the high frequency region of 1 MHz or more, a large loss occurs due to the eddy current flowing through the magnetic material itself. Since the metal-based magnetic material has a small electric resistance, it has a large eddy current loss and is difficult to use in a high frequency range. On the other hand, oxide-based magnetic materials such as ferrite and garnet have a very high electric resistance, so that loss due to eddy current is relatively unlikely to occur. However, it is difficult to obtain a high magnetic permeability, and the saturation magnetic flux density is small, so that the natural resonance frequency is low, and there are many restrictions on use in a high frequency range.

There is great expectation for a magnetic material having a high saturation magnetic flux density and good high-frequency characteristics, and methods for increasing the electric resistance of a metallic magnetic material have been proposed.
For example, a method for obtaining an amorphous alloy film in which ceramics are dispersed by co-sputtering of metal and ceramics has been proposed in JP-A-60-152651, and further, J.
Appl.Phys.63 (8), 15 April 1988, Fe-B ₄ C based dispersion film, J.AppL.Phys.67 (9), 1 May 1990 Co _0.4 Fe.
_{It is shown that the 0.4} B _0.2 -SiO ₂ -based dispersion film has both high specific resistance and soft magnetic properties. Further, good soft magnetic characteristics cannot be obtained with a thick single-layer film. Co _0.95 Fe _0.05
-By using a BN-based dispersion film as a magnetic layer having a thickness of 0.1 μm or less, soft magnetic properties can be obtained, and by stacking thin films with a non-magnetic intermediate layer interposed, soft magnetic properties can be obtained even with a thick film. It is disclosed in Japanese Patent Application Laid-Open No. 4-142710.

On the other hand, a method for obtaining an amorphous alloy film having a high electric resistivity by reactive sputtering with N ₂ or O ₂ gas is disclosed in JP-A-54-94428.
In addition, it has been found in many alloy systems that the addition of N ₂ gas at the time of forming a thin film is effective in improving the soft magnetic properties. For example, IEEE TRANS. ON MAG. MAG-20 1451 (198
It is disclosed in 4).

[0005]

A magnetic material used in a high frequency range is required to have high electric resistance and high saturation magnetization. Further, it is desirable that the magnetostriction constant of the material be as close to zero as possible in order to minimize deterioration of the soft magnetic characteristics due to processing strain. However, the previously reported Fe / B ₄ C based dispersion film, Co _0.4 Fe _0.4 B _0.2 / Si
It has been shown that each of the O ₂ -based dispersion films has excellent soft magnetic characteristics when it is in the amorphous phase, but it has a very large positive magnetostriction of 10 ⁻⁵ or more. On the other hand, a Co _0.95 Fe _0.05 / BN dispersion film was developed for the purpose of achieving both zero magnetostriction and high resistance. This system has a large saturation magnetic field and a large coercive force in a thick single layer film of 0.1 μm or more and has a soft magnetic property. Not shown. Therefore, it has been shown that soft magnetic properties can be obtained by stacking via a non-magnetic layer, but on the other hand, this means that the saturation magnetization of the entire film is reduced and the process becomes complicated. Included points.

On the other hand, in recent years, it has been actively studied to develop a soft magnetic material having a small magnetostriction constant by refining the crystal grains of an Fe-based alloy. For example, Japanese Patent Laid-Open No. 3-11
In Japanese Patent No. 2104, a Fe alloy in which Zr or Ta carbide is dispersed is obtained by subjecting an amorphous phase produced by sputtering to crystallization heat treatment, and the saturation magnetostriction is small and the soft magnetic property is excellent. It is shown. By further adding Al to this alloy thin film, 100 to 20
It has been shown that a specific resistance of 0 μΩcm can be obtained, but it cannot be said to be sufficient to suppress eddy current loss in the high frequency range, and a high specific resistance has a problem that the saturation magnetic flux density is small. there were. In addition, these thin films can be used after undergoing a crystallization heat treatment of an amorphous alloy thin film.
Since this heat treatment temperature is as high as 500 ° C. or higher, it cannot be used for a substrate having no heat resistance or an element which is not exposed to high temperature.

On the other hand, a method of forming a Fe-based alloy in an atmosphere containing N or O in order to obtain fine crystal grains immediately after film formation is disclosed in Japanese Patent Laid-Open No. 3-120339. . However, the electrical resistivity of the thin films obtained by these methods was not large enough to suppress eddy current loss in the high frequency range. FeH is also included in the summary of lectures at the 112th Spring Meeting of the Japan Institute of Metals, 1993, p84 (143).
It has been shown that an amorphous alloy thin film having a high electric resistivity and an excellent soft magnetic property can be produced by sputtering the f alloy in an atmosphere containing O ₂ , but there is no description regarding magnetostriction.

By the way, a major cause of magnetic core loss in the high frequency range is resonance loss in addition to the above-mentioned eddy current loss. This resonance loss is suppressed as the saturation magnetic flux density and the anisotropic magnetic field are higher. From this point, an Fe-based alloy having a large saturation magnetic flux density was promising as a high-frequency magnetic core, but C
Since it was difficult to increase the anisotropic magnetic field as compared with the case of using an o-group or the like, a material having sufficient high frequency characteristics has not been reported so far.

As described above, there has been a demand for a high-frequency magnetic thin film material having a large electric resistivity, a small magnetostriction, and a good soft magnetic property even in a thick single layer film. The present invention has been made in view of the above points, and an object of the present invention is to provide a magnetic thin film having excellent soft magnetic characteristics in a high frequency range and large electric resistivity and saturation magnetization, and a manufacturing method thereof.

[0010]

Means and Action for Solving the Problems The present inventors have
As a result of diligent efforts in view of the above circumstances, a composite dispersion film of oxide-based and fluoride-based ceramics and bcc-Fe has high electric resistivity, small magnetostriction, and 0.1%.
It was found that good soft magnetic characteristics can be obtained even with a thick single-layer film of μm or more. Furthermore, they have found that uniaxial magnetic anisotropy can be imparted by forming these thin films under a DC magnetic field. The anisotropic magnetic field at this time is
Incredibly large, 100 Oe
Was over. These films have a very high natural resonance frequency due to a large anisotropic magnetic field, and are several hundred MH.
Although it has an excellent feature that the soft magnetic property does not deteriorate even at z or more, it has a drawback that its application is limited because of its small magnetic permeability. Therefore, the present inventors have made diligent efforts to control the magnitude of the anisotropic magnetic field in these thin films, and as a result, found that it can be achieved by adding a specific amount of N, leading to the present invention. It is a thing.

[0011]

EXAMPLES Examples of the present invention will be described below with comparison with a conventional composite dispersion film and the like. BN, SiC, S
A film made by simultaneously sputtering ceramics such as io ₂ and metals such as Fe and Fe alloys has a unique network-like crystal structure when observed in detail with a transmission electron microscope. To be found. This is an amorphous or crystalline cluster mainly composed of a metal covered with a grain boundary phase mainly composed of a ceramic, and these films have an electrical ratio 2 to 10 ⁴ times higher than that of an ordinary metal thin film. This organization is the main reason for the resistance. The present inventors have examined in detail the effect of the combination of Fe and ceramics on the crystal structure and magnetic properties of the film. As a result, the following was newly found. The film in which the clusters after film formation are amorphous exhibits high electric resistivity and soft magnetism and large positive magnetostriction of 10 ⁻⁵ , and this tendency does not depend on the type of ceramics. On the other hand, when the clusters are crystalline, the type of ceramics greatly affects the magnetic properties. That is, in the case of a composite dispersion film made of a nitride or a carbide such as BN or SiC, the film that is crystalline in the formed state does not exhibit soft magnetism. On the other hand, a thin film in which the amorphous phase is heat-treated and the clusters are crystallized into the bcc-Fe phase exhibits soft magnetism, and the saturation magnetostriction constant decreases with crystallization, and 10 ^-6
However, even if heat treatment is performed in a large magnetic field of 1 k Oe or more, it is difficult to impart uniaxial magnetic anisotropy, and therefore high frequency characteristics are not sufficient. For example, Fe-Si ₃ N ₄
In the system, uniaxial anisotropy is lost in the process of crystallization from amorphous.
Further, the Fe-AlN-based thin film is either an amorphous film or a crystal film after heat treatment, and only an isotropic film can be obtained. The uniaxial magnetic anisotropy plays a more important role than the electrical resistivity in the high frequency range of several tens of MHz or more. That is, a material having a small anisotropic magnetic field has a low natural resonance frequency and tends to have a large dispersion of the anisotropic magnetic field, resulting in high loss and not suitable for use in a high frequency range.

On the other hand, the composite dispersion film composed of Fe and an oxide or fluoride shows good soft magnetism even when the film in which the clusters are in the bcc-Fe phase is formed. Hereinafter, it will be explained as an example Fe-SiO ₂ system. A film containing a large amount of SiO ₂ becomes amorphous like a carbide-based or nitride-based film,
It exhibits soft magnetic properties. Further, a film containing less SiO ₂ becomes crystalline, but among them, a film mainly composed of the bcc-Fe phase exhibits soft magnetism in the as-formed state. The saturation magnetostriction of each of these films is +10 ⁻⁶ −der, which is smaller than that of a carbide-based or nitride amorphous film. Particularly, a film containing bcc—Fe as a main phase is + 3 × 10 ⁻⁶ degrees, which is sufficiently small. Also, unlike nitride-based and carbide-based films, uniaxial magnetic anisotropy can be easily added to these films by applying a static magnetic field during film formation. 15 for quality membranes
Although not as large as Oe, it is very large in a film having bcc-Fe as a main phase, and some films exceed 100 Oe. No case has been reported so far in which such a large saturation magnetic field was obtained with excellent soft magnetic properties. Since the saturation magnetic flux density of this film is as large as 10-18 kG, the theoretical natural resonance frequency is as high as 2 GHz or more, and the electrical resistivity is also as large as 100-1000 μΩcm, so there is little eddy current loss and it is extremely excellent in high frequency characteristics. It is a thing. As described above, the fact that the film containing bcc-Fe as the main phase exhibits soft magnetism and large anisotropy is not limited to Fe-SiO ₂ system, but Fe and oxide-based or fluoride-based ceramics. It is generally found in composite dispersion films consisting of. However, since they have a very large anisotropic magnetic field, they are excellent in that they can be used up to a very high frequency, but they also have a problem that the magnetic permeability is small. That is, in the high frequency band, the magnetization process due to rotational magnetization is dominant, and the magnetic permeability is inversely proportional to the anisotropic magnetic field. Therefore, the magnetic permeability of these films, which are so large that the anisotropic magnetic field exceeds 100 Oe, is about 100, and the applications are very limited. It is desirable that the magnitude of the anisotropic magnetic field can be adjusted to an appropriate value while considering the resonance frequency and the magnetic permeability.
No such adjustment was possible with these membranes.

The present inventors have found that Fe-oxide or Fe
The inventors have made diligent efforts to find a method of controlling the anisotropic magnetic field of a thin film containing a fluoride-based bcc-Fe as a main phase. As a result, they have found that the anisotropic magnetic field can be adjusted by adding a specific amount of N to them, and have reached the present invention.

The present invention has been achieved by the above process, and is represented by "general formula Fe _100-xyz M _x N _y L _z (atomic%), where M is Be, B, Mg, Al, Si, C
a, Ti, Y, Zr, Mo, In, Sn, Cs, Ba,
La, Hf, Ta, Bi, Pb, W is one or more elements selected from L, L is one or two elements selected from O and F, respectively. Has an atomic ratio of 5 ≦ x ≦ 25 8 ≦ y ≦ 25 15 ≦ z ≦ 35 28 ≦ x + y + z ≦ 50, and its crystal structure is mainly composed of a bcc-Fe structure and an M oxide phase or a fluoride phase. A high resistance soft magnetic thin film. 』Is the main idea.

The thin film of the present invention has a network structure in which a metallic crystalline cluster is covered with a grain boundary phase mainly composed of ceramics. From the state analysis such as XPS, it is clear that the composition of this grain boundary strongly depends on the composition of the ceramic target, and the metal cluster is not an elemental Fe but an alloy of M element and Fe given from the ceramic target. It has become. That is, when the ceramic target is changed, the composition of both the metal cluster phase and the grain boundary phase changes greatly. However, in the present invention, M is Be, B, Mg, Al, Si, Ca, Ti, Y, Zr,
Mo, In, Sn, Cs, Ba, La, Hf, Ta, B
Soft magnetic characteristics can be obtained as long as it is selected from i, Pb, and W. This can be understood by explaining the cause of the soft magnetic property in the thin film of the present invention as follows. That is, bc having high crystal symmetry
The c-Fe phase is disturbed by grain growth due to the network structure of the ceramic grain boundaries and becomes fine crystals. It is well known that FeNbCuSiB alloy and the like show that a bcc-Fe alloy composed of microcrystals of an appropriate size exhibits soft magnetic characteristics because the magnetic anisotropy of each microcrystal is canceled. In the thin film of the present invention, the grain boundary phase mainly acts as a “frame” for accommodating the bcc phase, and the alloying of the metal phase is also bc.
It can be understood that there is no composition dependence, considering that the soft magnetic properties are exhibited as long as the c phase is maintained. Therefore, in the present invention, the composition of M and L is mainly defined by the formation of the network structure of grain boundaries. In order to form a network structure, M needs to be 5 atomic% or more. If it is less than 5%, soft magnetism cannot be obtained, and if it exceeds 25 atomic%, the saturation magnetic flux density becomes too small. Not preferable. The amount of L varies depending on the amount of M and its type.
If it is less than atomic%, a network structure cannot be formed, and if it exceeds 35 atomic%, it is not preferable because the soft magnetism is deteriorated or an abnormal loss occurs in a high frequency range. On the other hand, as long as the cluster can maintain the bcc-Fe structure, there is no problem even if other elements form a solid solution. This does not limit the type of ceramic target, and even if the Fe target is changed to the Fe alloy target,
It is shown that soft magnetic characteristics can be obtained. In fact, even if Fe is replaced with Co, if the amount of replacement is within 70% that can maintain the bcc structure, soft magnetic characteristics can be obtained and the saturation magnetic flux density can be increased. For the same reason, other elements may be Fe as long as they do not hinder the bcc structure.
Addition to is included in the scope of the present invention.
In the present invention, N has a very important effect in adjusting the anisotropic magnetic field. That is, the anisotropic magnetic field decreases as the amount of N increases. However, if N is less than 8 atomic%, the anisotropic magnetic field does not change, and if it exceeds 25 atomic%, soft magnetism is impaired, which is not suitable. In the present invention, N also acts as an amorphous forming element, so N is made amorphous when added in excess of 25 atom%. In this case, the saturation magnetostriction constant is 10 ^-5
In addition to the large size, the soft magnetism is lost due to the perpendicular magnetic anisotropy. The addition of N in the film can be performed by adding a nitride target, but can also be adjusted by adding a gas containing N to the sputtering gas. That is, for example Fe-SiO ₂ system 1
When forming a film with a sputtering pressure of 0 mTorr, the anisotropic magnetic field is continuously changed from 120 Oe to almost 0 Oe (isotropic) by changing the flow rate ratio of N _{2 in} the sputtering gas from 0 to 5%. Can be made. From this, the following manufacturing method was derived as the second gist of the present invention. That is, the present invention is represented by "general formula FeMNL, where M is Be, B, Mg, Al, Si, Ca, Ti,
Y, Zr, Mo, In, Sn, Cs, Ba, La, H
f, Ta, Bi, Pb, W is one or more elements selected from L, L is one or two elements selected from O and F, and its crystal structure In producing a high resistance magnetic thin film mainly composed of a bcc-Fe structure and an oxide phase or a fluoride phase of M, a gas containing N is added to the sputtering gas to adjust the magnitude of the anisotropic magnetic field. A method of manufacturing a high resistance magnetic thin film, comprising: 』Is the main idea.

In the method of the present invention, N is N ₂ or NH ₃
Etc. are added as gas. The amount of addition must be determined in consideration of the target composition, sputtering pressure or sputtering power, but Hk can be controlled by adding appropriately. It should be noted that if the added amount is too large, it becomes amorphous and the perpendicular magnetic anisotropy becomes strong and the soft magnetic properties may be lost.

Hereinafter, the present invention will be described in more detail with reference to specific examples. [Comparative Example-1] Fe having a diameter of 4 inches and a purity of 99.9%
On the disk, the purity is 99.9 so that the coverage is 30%.
% Of a SiO ₂ plate in a fan shape to produce a Fe—SiO ₂ thin film by high frequency sputtering. The film forming conditions were set as shown in Table 1 below.

Table-1 Sputtering pressure 1.0 × 10 ^-2 Torr Input power 90 W Substrate temperature 20 ° C. (water cooling) Substrate Corning # 7059 Thickness 0.
5 mm Film thickness 2.4 μm Sputtering gas flow rate Ar 10 CCM Applied magnetic field 1 pair of permanent magnets (40 Oe) The obtained sample is an X-ray diffractometer RAD-3A manufactured by Rigaku Denki Co., Ltd.
The tissue was identified by. The results are shown in Figure 2. 2θ is 44
A broad diffraction peak corresponding to the (110) plane of bcc-Fe is observed in the vicinity of °. Next, FIG. 3 shows the results of observing the microstructure of the thin film with a transmission electron microscope H-9000 NAR manufactured by Hitachi Ltd. A network-like structure consisting of clusters having a grain size of about 50 angstroms and grain boundaries having a thickness of several angstroms is observed, and it is recognized that this thin film is composed of two phases. Further, it was confirmed from the electron diffraction pattern that these were a bcc-Fe phase and a compound phase similar to SiO ₂ . When the composition of the entire film was analyzed by Rutherford backscattering, the composition was Fe ₆₄ Si ₁₁ O ₂₄ (atomic%). Next, the state of each element was analyzed by an X-ray spectroscopic analyzer ESCA-5600 manufactured by ULVAC-PHI. From the peak profile of the binding energy of Si _2p , it can be seen that Si has two states, one that forms a metal phase by binding with Fe and one that forms a SiO _x phase by binding with O. all right. It was confirmed that the thin film thus obtained had a fine structure in which the metallic phase mainly composed of FeSi having the bcc crystal structure was covered with the amorphous SiO _x phase. Next, the DC magnetic characteristics were measured with a sample vibration type magnetometer BHV-30SS manufactured by Riken Denshi Co., Ltd. FIG. 4 shows the results. The two data in the figure represent the results measured by exciting in parallel (//) and perpendicular (|) to the magnetic field application direction during film formation. The sample has a uniaxial magnetic anisotropy in which the direction of the magnetic field applied during film formation is parallel to the easy axis of magnetization, and its anisotropic magnetic field (Hk) is 83 Oe.
And was a very big one. Coercive force of sample (Hc)
Is sufficiently small as 2.0 Oe in the easy axis direction (Hce) and 0.4 Oe in the hard axis direction (Hch), and has a small anisotropy dispersion because the linearity of the hysteresis curve is good. Recognize. The saturation magnetic flux density (Bs) is also 1
It is sufficiently large as 5.2 kG. Electric resistivity of this film (ρ)
Was measured by the DC 4-terminal method to obtain 285 μΩcm
It was 2-3 times higher than that of a normal amorphous alloy. Next, the frequency characteristics of the magnetic permeability in the direction of the hard axis are analyzed by the Yokogawa Hewlett-Packard network analyzer 41.
It was measured by the parallel line method with 95A. For a detailed explanation of this method, see the Applied Magnetics Society of Japan, Vol.
17, No. 2, p497 (1993). The results are shown in Fig. 5. Despite the fact that the film was quite thick, it showed good frequency characteristics that did not deteriorate up to 500 MHz. This is obtained because this thin film has a high saturation magnetic flux density, an anisotropic magnetic field, a high electrical resistivity, and is uniform with little disorder, and the Journal of Japan Society for Applied Magnetics, Vo.
l. 15, No. 2, p327 (1991), the values were almost the same as the theoretical values obtained from Bs, Hk, ρ and film thickness. However, since Hk was as large as 100 Oe or more, the real part μ ′ of the magnetic permeability was as small as 200.

Next, the saturation magnetostriction constant of this film was measured by an optical lever type saturation magnetostriction measuring device MS-7 manufactured by Naruse Kagaku Kikai Co., Ltd.
It measured under the magnetic field of Oe. In this measurement, since it was very difficult to actually measure the Young's modulus of the film, the value of 12 × 10 ³ kg / mm ² of FeSiB ribbon was adopted and calculated. As a result, the magnetostriction was + 3.0 × 10 ^−6, which was a very small value of 1/5 to 1/10 of the conventional Fe-based amorphous alloy. [Comparative Example-2] Fe having a diameter of 4 inches and a purity of 99.9%
A thin film was produced by high frequency sputtering using a composite target in which a Si ₃ N ₄ plate was installed in a fan shape so that the coverage rate was 40% on the disk. Other film forming conditions were set as shown in Table 2 below.

Table-2 Sputtering pressure 1.0 × 10 ^-2 Torr Input power 90 W Substrate temperature 20 ° C. Substrate Corning # 7059 Thickness 0.
5 mm Film thickness 0.8 μm Sputtering gas flow rate Ar 10 CCM Applied magnetic field 1 pair of permanent magnets (40 Oe) The obtained thin film was in the bcc-Fe phase as in Example 1 as shown in FIG. The composition of the film was analyzed by Rutherford backscattering method and found to be Fe ₆₅ Si ₂₁ N ₁₄ (atomic%).
Met. The DC magnetic hysteresis curve of this thin film by VSM is shown in FIG. The sample had a large coercive force of 14 Oe and exhibited neither soft magnetic characteristics nor uniaxial magnetic anisotropy. Note that 100
The saturation magnetostriction constant could not be measured because the magnetization was not saturated with Oe. In the film formation conditions of Example -1 Comparative Example 1 to prepare a Fe-SiO ₂ -N film while adding N2 to the sputtering gas. The crystal structure and electromagnetic characteristics of the obtained film were measured in the same manner as in Comparative Example-1. The composition of the film was analyzed by Rutherford backscattering. The N concentration in the film increased as the N ₂ gas flow rate ratio increased. Next, FIG. 1 shows the relationship between the N concentration and the anisotropic magnetic field Hk of the film. Hk hardly changed until the N concentration was up to about 8 atom%, but it decreased as the N concentration became higher, and became isotropic at about 15.5 atom% or more. The permeability μ ′ increased in inverse proportion to Hk. Thus, the uniaxial magnetic anisotropy could be controlled very easily by adjusting the amount of N ₂ gas added. [Comparative Example-3] A film was formed under the same conditions as in Example-2 with the N2 addition ratio of the sputtering gas being 10%. The composition of the film analyzed by Rutherford backscattering was Fe ₄₉ Si ₉ O
_{It was 15N26} (atomic%). The X-ray diffraction pattern of the obtained film is shown in FIG. A broad halo is seen around 40 °, and there are no other peaks, indicating that the structure is amorphous. The DC magnetic hysteresis curve of this film is shown in FIG. The coercive force was 18 Oe and the saturation magnetic field was 252 Oe, which was very large and soft magnetic characteristics could not be obtained. In addition to this film 500
The magnetic properties were not improved by heat treatment in a magnetic field up to ℃.

[0021]

As described above, according to the present invention, it is possible to provide a thin film material which is a soft magnetic thin film having both high electric resistance and high saturation magnetization and excellent high frequency characteristics. The thin film of the present invention can be provided in a wide range because its anisotropic magnetic field can be adjusted while taking the resonance frequency and the value of magnetic permeability into consideration. Further, since the saturation magnetostriction constant is as small as 10 ⁻⁶ , the influence of processing strain and the like can be made small. Further, the magnitude of the anisotropic magnetic field of the thin film of the present invention can be easily controlled by the method of the present invention. This method is different from methods such as heat treatment in a rotating magnetic field, which has been widely performed in the past, and is a very simple method of only adding a gas during sputtering, and does not require any special process or apparatus. Industrial significance is great.

[Brief description of drawings]

FIG. 1 is a characteristic diagram showing a relationship between an N concentration in a thin film and an anisotropic magnetic field in an alloy thin film of the present invention.

FIG. 2 is an X-ray diffraction diagram showing a crystal structure of an alloy thin film.

FIG. 3 is a bright field image diagram of a transmission electron microscope showing a fine structure of an alloy thin film.

FIG. 4 is a characteristic diagram for explaining DC magnetic characteristics of an alloy thin film.

FIG. 5 is a characteristic diagram for explaining frequency characteristics of magnetic permeability.

FIG. 6 is an X-ray diffraction diagram showing a crystal structure of an alloy thin film.

FIG. 7 is a characteristic diagram showing DC magnetic characteristics of an alloy thin film.

FIG. 8 is an X-ray diffraction diagram showing a crystal structure of an alloy thin film.

FIG. 9 is a characteristic diagram showing DC magnetic characteristics of an alloy thin film.

Front page continuation (72) Inventor Fumio Matsumoto 6-6-6 Minamiyoshinari, Aoba-ku, Sendai-shi, Miyagi Amorphous Electronic Devices Laboratory Co., Ltd. (72) Keian Fujimori 2-chome Yoshinari, Aoba-ku, Sendai-shi, Miyagi 20 No. 3 (72) Inventor Ken Masumoto 3-8-22 Uesugi, Aoba-ku, Sendai-shi, Miyagi (56) Reference JP-A-2-65106 (JP, A) JP-A-3-203307 (JP, A) JP-A-3-132004 (JP, A)

Claims (5)

(57) [Claims] 1. A general formula: Fe _100-xyz M _x N _y L _z
(Atomic%), M is Be, B, Mg, Al, S
i, Ca, Ti, Y, Zr, Mo, In, Sn, Cs,
One or more elements selected from Ba, La, Hf, Ta, Bi, Pb, W, and L is O, F
Is one or two elements selected from among, and the atomic ratio of each is 5 ≦ x ≦ 25 8 ≦ y ≦ 25 15 ≦ z ≦ 35 28 ≦ x + y + z ≦ 50, and its crystal structure is mainly A magnetic thin film comprising a bcc-Fe structure and an M oxide phase or a fluoride phase. 2. The magnetic thin film according to claim 1, wherein less than 70% of Fe is replaced by Co. 3. The magnetic thin film according to claim 1, wherein the film has a network-like fine structure. 4. The magnetic thin film according to claim 1, wherein the film is crystalline as it is after being formed. 5. A compound represented by the general formula FeMNL, wherein M is B
e, B, Mg, Al, Si, Ca, Ti, Y, Zr, M
o, In, Sn, Cs, Ba, La, Hf, Ta, B
i, Pb, W is one or more elements selected from L, L is one or two elements selected from O and F, and its crystal structure is mainly bcc. -F
In producing a high resistance magnetic thin film composed of an e structure and an M oxide phase or a fluoride phase, a gas containing N is added to the sputtering gas to adjust the magnitude of the anisotropic magnetic field. Method for manufacturing magnetic thin film.