JP2555885B2 - Germanium / gallium arsenide junction manufacturing method - Google Patents
Germanium / gallium arsenide junction manufacturing methodInfo
- Publication number
- JP2555885B2 JP2555885B2 JP1133111A JP13311189A JP2555885B2 JP 2555885 B2 JP2555885 B2 JP 2555885B2 JP 1133111 A JP1133111 A JP 1133111A JP 13311189 A JP13311189 A JP 13311189A JP 2555885 B2 JP2555885 B2 JP 2555885B2
- Authority
- JP
- Japan
- Prior art keywords
- germanium
- gallium arsenide
- temperature
- gallium
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052732 germanium Inorganic materials 0.000 title claims description 72
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 72
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 61
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims description 49
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 32
- 229910052785 arsenic Inorganic materials 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 description 32
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 23
- 239000010410 layer Substances 0.000 description 20
- 229910052733 gallium Inorganic materials 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 239000007787 solid Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はゲルマニウム・砒化ガリウム接合の製造方法
に関する。The present invention relates to a method for manufacturing a germanium / gallium arsenide junction.
（従来の技術） ゲルマニウム・砒化ガリウム接合は、ヘテロ接合バイ
ポーラトランジスタなどとして超高速トランジスタに応
用できる。この実現のためには、ゲルマニウム・砒化ガ
リウム接合を再現性、制御性良く作製できる技術が極め
て重要になる。(Prior Art) A germanium / gallium arsenide junction can be applied to an ultra-high speed transistor such as a heterojunction bipolar transistor. In order to realize this, a technique capable of producing a germanium-gallium arsenide junction with good reproducibility and controllability is extremely important.
アイ・イー・イー・イー・エレクトロン・デバイス・
レターズ（IEEE Electron Device Letters）誌第59号36
01頁から述べられているように、シリコンをドーピング
した砒化ガリウムとガリウムガリウムをドーピングした
ゲルマニウムとからなるヘテロ接合は、成長温度が500
℃以上では砒素とゲルマニウムが相互拡散しnpnp特性を
示し、500℃以下ではnp特性を示す。I-E-E-Electron Device-
Letters (IEEE Electron Device Letters) No. 59 36
As stated on page 01, a heterojunction consisting of silicon-doped gallium arsenide and gallium gallium-doped germanium has a growth temperature of 500
At temperatures above ℃, arsenic and germanium interdiffuse and show npnp characteristics, and at temperatures below 500 ℃, np characteristics.
また、第36回応用物理学関係連合講演会第３分冊1038
頁に述べられているように、ｎ型砒化ガリウム基板上の
ｎ型砒化ガリウム成長層上に、基板温度500℃でｐ型ゲ
ルマニウムをMBE成長させ作製したpn接合は良好なpn接
合特性を示すのに対し、基板温度300℃でｐ型ゲルマニ
ウムを成長させ作製したpn接合はリーク電流が多い。し
かし、基板温度500℃でゲルマニウムを成長させた場
合、ゲルマニウム中にガリウムが約4000Å拡散してい
る。Also, The 36th Joint Lecture on Applied Physics 3rd Volume 1038
As described on the page, the pn junction prepared by MBE growth of p-type germanium on the n-type gallium arsenide growth layer on the n-type gallium arsenide substrate at a substrate temperature of 500 ° C. shows good pn junction characteristics. On the other hand, a pn junction produced by growing p-type germanium at a substrate temperature of 300 ° C. has a large leak current. However, when germanium is grown at a substrate temperature of 500 ° C, gallium diffuses in the germanium at about 4000Å.
（発明が解決しようとする課題） 以上述べたように、低温で成長させたゲルマニウム膜
はガリウム原子の拡散は少ないが、電気特性の良好な膜
が出来ない。一方、高温で成長させたゲルマニウム膜は
電気特性は良好であるが、ガリウム原子の拡散が大き
く、面密度で1.4×1014cm-2程度拡散してしまう。従っ
て、ゲルマニウム膜にガリウム原子を拡散させずに、薄
いｐ型ゲルマニウム膜、高純度のゲルマニウム膜あるい
は不純物補償のないｎ型ゲルマニウム膜を結晶性よく、
すなわち電気特性の良好な膜として成長させることが困
難であった。(Problems to be Solved by the Invention) As described above, a germanium film grown at a low temperature has less diffusion of gallium atoms, but a film having good electric characteristics cannot be formed. On the other hand, the germanium film grown at high temperature has good electrical characteristics, but the gallium atoms diffuse largely and the surface density diffuses about 1.4 × 10 14 cm -2 . Therefore, without diffusing gallium atoms into the germanium film, a thin p-type germanium film, a high-purity germanium film, or an n-type germanium film without impurity compensation has good crystallinity,
That is, it has been difficult to grow a film having good electric characteristics.
本発明の目的は、これら従来のゲルマニウム・砒化ガ
リウム接合を製造する方法の持つ欠点を除去し、低濃度
のｐ型ゲルマニウム膜、高純度のゲルマニウム膜および
不純物補償のないｎ型ゲルマニウム膜を結晶性よく作製
できる新規な製造方法を提供することにある。The object of the present invention is to eliminate the drawbacks of these conventional methods for manufacturing a germanium-gallium arsenide junction, and to make a low-concentration p-type germanium film, a high-purity germanium film and an n-type germanium film without impurity compensation crystalline. It is to provide a novel manufacturing method that can be well manufactured.
（課題を解決するための手段） 本発明は、砒化ガリウムとゲルマニウムのヘテロ接合
の製造方法において、砒素安定化面砒化ガリウム上に第
１の基板温度でゲルマニウムを薄く成長させ、そののち
に第１の温度より高い第２の基板温度にしたのち、ゲル
マニウムを成長させることを特徴とするゲルマニウム・
砒化ガリウム接合の製造方法である。(Means for Solving the Problem) The present invention provides a method for manufacturing a heterojunction of gallium arsenide and germanium, in which germanium is thinly grown at a first substrate temperature on an arsenic-stabilized surface gallium arsenide, and then the first The temperature of the second substrate higher than that of germanium, and then growing germanium.
It is a method of manufacturing a gallium arsenide junction.
また、本発明は、砒化ガリウムとゲルマニウムのヘテ
ロ接合の製造方法において、（２×２）表面超構造砒化
ガリウム上に第１の基板温度でゲルマニウムを薄く成長
させたのち、基板温度を上昇させて、ゲルマニウム上の
砒素を蒸発させ、そののちに第１の基板温度より高い第
２の基板温度で、ゲルマニウムを成長させることを特徴
とするゲルマニウム・砒化ガリウム接合の製造方法であ
る。The present invention also provides a method of manufacturing a heterojunction of gallium arsenide and germanium, in which germanium is thinly grown on a (2 × 2) surface superstructure gallium arsenide at a first substrate temperature and then the substrate temperature is raised. The method for manufacturing a germanium-gallium arsenide junction is characterized in that arsenic on germanium is evaporated, and then germanium is grown at a second substrate temperature higher than the first substrate temperature.
（作用） バイス・ベル・エーイーヂー・テレフンケン（Wiss.B
er.AEG Telefunken）誌49巻213頁から述べられているよ
うに、原子の表面拡散係数は固体中を原子が拡散する拡
散係数に比べ、約10桁大きい。原子の表面拡散係数は基
板表面温度が低いほど小さくなり、基板表面温度が高く
なると、原子の再蒸発が生じる。(Function) Vice Bell AJ Telefunken (Wiss.B
er.AEG Telefunken), Vol. 49, p. 213, the surface diffusion coefficient of atoms is about 10 orders of magnitude higher than the diffusion coefficient of atoms in solids. The surface diffusion coefficient of atoms becomes smaller as the substrate surface temperature becomes lower, and when the substrate surface temperature becomes higher, re-evaporation of atoms occurs.
ジャーナル・オブ・クリスタル・グロース（Journal
of Crystal Growth）誌95巻421頁から述べられているよ
うに、砒素安定化面砒化ガリウム表面にゲルマニウムを
基板温度300℃で成長させると、砒素の拡散は抑制さ
れ、ガリウムの拡散のみが生じ、ゲルマニウムはｐ型を
示す。それに対し、（２×２）表面超構造砒化ガリウム
表面にゲルマニウムを基板温度300℃で成長させると、
ガリウム、砒素ともに拡散するが、砒素原子がゲルマニ
ウム表面層に偏析しながらゲルマニウム膜は成長する。
そのため、砒素原子の拡散がガリウム原子の拡散に比べ
大きく、ガリウムはｎ型を示す。請求項記載の第１の発
明は、砒素安定化面砒化ガリウムを用い砒素の拡散を抑
制し、請求項記載の第２の発明は（２×２）表面超構造
砒化ガリウム表面を用いガリウムの拡散を小さくしてい
る。Journal of Crystal Growth (Journal
As described in Vol. 95, p. 421, the growth of germanium on the arsenic-stabilized gallium arsenide surface at a substrate temperature of 300 ° C. suppresses the diffusion of arsenic and only the diffusion of gallium occurs. Germanium exhibits p-type. On the other hand, when germanium is grown at a substrate temperature of 300 ° C. on the (2 × 2) surface superstructure gallium arsenide surface,
Both gallium and arsenic diffuse, but the germanium film grows while arsenic atoms segregate in the germanium surface layer.
Therefore, the diffusion of arsenic atoms is larger than the diffusion of gallium atoms, and gallium exhibits n-type. A first aspect of the present invention uses arsenic-stabilized gallium arsenide to suppress arsenic diffusion, and a second aspect of the present invention uses a (2 × 2) surface superstructure gallium arsenide surface to diffuse gallium. Is small.
また、第36回応用物理学関係連合講演会第３分冊1038
頁に述べられているように、ｎ型砒化ガリウム基板上の
ｎ型砒化ガリウム成長層上に、基板温度500℃でｐ型ゲ
ルマニウムを成長させ作製したpn接合は良好なpn接合特
性を示すのに対し、基板温度300℃でｐ型ゲルマニウム
を成長させ作製したpn接合は逆方向の漏れ電流の大きな
特性を示す。Also, The 36th Joint Lecture on Applied Physics 3rd Volume 1038
As described in the page, a pn junction prepared by growing p-type germanium on an n-type gallium arsenide growth layer on an n-type gallium arsenide substrate at a substrate temperature of 500 ° C. shows good pn junction characteristics. On the other hand, a pn junction produced by growing p-type germanium at a substrate temperature of 300 ° C. exhibits a large reverse leakage current characteristic.
以上の事実から、請求項記載の第１の発明では砒化ガ
リウム基板上の砒化ガリウム成長層最上表面を砒素安定
化面にしたのち、基板温度を低温、例えば300℃以下に
下げ、ゲルマニウムをごく薄く、例えば100Å成長させ
る。この方法により、砒化ガリウム層からの砒素の拡散
を防ぐとともに、基板表面温度が低いので表面拡散係数
が小さく、ガリウムの拡散も小さくなる。その後、基板
温度を上昇させ、ゲルマニウムを成長させる。このと
き、砒化ガリウムからのガリウムの拡散は固体中を拡散
する拡散係数に支配されるので、表面拡散に比べ、非常
に小さい。また、低温にて成長したゲルマニウムはごく
薄く、しかもそのあとの熱処理で低温成長ゲルマニウム
の結晶性が回復するので、電子の走行には影響を及ぼさ
ない。From the above facts, in the first invention described in the claim, after the uppermost surface of the gallium arsenide growth layer on the gallium arsenide substrate is made an arsenic stabilizing surface, the substrate temperature is lowered to a low temperature, for example, 300 ° C. or less, and germanium is made extremely thin. , For example, grow 100Å. By this method, the diffusion of arsenic from the gallium arsenide layer is prevented, and since the substrate surface temperature is low, the surface diffusion coefficient is small and the diffusion of gallium is also small. Then, the substrate temperature is raised to grow germanium. At this time, since the diffusion of gallium from gallium arsenide is governed by the diffusion coefficient of diffusing in the solid, it is much smaller than the surface diffusion. Further, germanium grown at a low temperature is extremely thin, and the crystallinity of the low-temperature grown germanium is recovered by the subsequent heat treatment, so that the electron traveling is not affected.
一方、請求項記載の第２の発明では、砒化ガリウム基
板上の砒化ガリウム成長層最上表面を（２×２）表面超
構造にしたまま、基板温度を低温に下げ、ゲルマニウム
をごく薄く成長させる。この方法では、砒素原子、ガリ
ウム原子ともに拡散するが、基板表面温度が低いので表
面拡散係数が小さいことにより、砒素原子、ガリウム原
子ともに拡散は小さくなる。その後、基板温度を上昇さ
せ、ゲルマニウムを再成長させる。このとき、ゲルマニ
ウム表面に偏析した砒素原子は再蒸発し、さらに砒化ガ
リウムからのガリウム、砒素の拡散は固体中を拡散する
拡散係数に支配されるので、表面拡散に比べ、非常に小
さい。また、低温にて成長したゲルマニウムはごく薄
く、しかもそのあと熱処理で低温成長ゲルマニウムの結
晶性が回復されるので、電子の走行には影響を及ぼさな
い。On the other hand, in the second aspect of the present invention, the substrate temperature is lowered to a low temperature and germanium is grown very thin while the uppermost surface of the gallium arsenide growth layer on the gallium arsenide substrate is kept to have the (2 × 2) surface superstructure. According to this method, both arsenic atoms and gallium atoms are diffused, but since the surface temperature of the substrate is low and the surface diffusion coefficient is small, the diffusion of both arsenic atoms and gallium atoms is small. Then, the substrate temperature is raised and the germanium is regrown. At this time, the arsenic atoms segregated on the surface of germanium are re-evaporated, and the diffusion of gallium and arsenic from gallium arsenide is controlled by the diffusion coefficient diffusing in the solid, so that it is much smaller than the surface diffusion. Further, germanium grown at a low temperature is extremely thin, and the heat treatment thereafter restores the crystallinity of the low-temperature grown germanium, so that it does not affect the transit of electrons.
（実施例） 第１図は請求項１記載の発明のゲルマニウム・砒化ガ
リウムpn接合の製造方法の一実施例を説明するための製
造工程を示した断面図である。工程順は以下のようにな
る。(Embodiment) FIG. 1 is a sectional view showing a manufacturing process for explaining an embodiment of a method for manufacturing a germanium / gallium arsenide pn junction according to the invention of claim 1. The process order is as follows.
（１）ｎ型砒化ガリウム基板１の上にｎ型砒化ガリウム
エピタキシャル層２を成長させる（第１図（ａ））。成
長はIII−Ｖ族系成長室とIV族系成長室を有し、両者の
間で基板を高真空中で移動できるMBE装置を用いた。(1) The n-type gallium arsenide epitaxial layer 2 is grown on the n-type gallium arsenide substrate 1 (FIG. 1 (a)). For the growth, an MBE apparatus having a III-V group growth chamber and a IV group growth chamber and capable of moving the substrate between them in a high vacuum was used.
（２）砒素雰囲気のない真空中に砒化ガリウム基板を移
動し、基板温度を450℃まで上昇させ砒素安定化面を出
す。砒素安定化面が現れたことはMBE装置のRHEEDでモニ
タできる。その後、低温、例えば300℃でゲルマニウム
層３を100Å成長させる（第１図（ｂ））。(2) The gallium arsenide substrate is moved to a vacuum without an arsenic atmosphere, the substrate temperature is raised to 450 ° C., and the arsenic stabilizing surface is exposed. The appearance of the arsenic stabilization surface can be monitored by RHEED of the MBE device. After that, the germanium layer 3 is grown at 100 Å at a low temperature, for example, 300 ° C. (FIG. 1 (b)).
（３）引き続いて基板温度を500℃まで上昇させ、ガリ
ウムをドーピングしながらゲルマニウム層４を１μｍ程
度成長させる（第１図（ｃ））。(3) Subsequently, the substrate temperature is raised to 500 ° C., and the germanium layer 4 is grown to about 1 μm while doping gallium (FIG. 1 (c)).
（４）基板を大気中に出し、パターニング、エッチング
により、電極５を形成する（第１図（ｄ））。(4) The substrate 5 is exposed to the atmosphere, and the electrode 5 is formed by patterning and etching (FIG. 1 (d)).
以上によりガリウム原子の拡散を抑えたゲルマニウム
・砒化ガリウム接合が作製できる。As described above, a germanium / gallium arsenide junction in which the diffusion of gallium atoms is suppressed can be manufactured.
第２図は請求項２記載の発明のゲルマニウム・砒化ガ
リウム接合の製造方法の一実施例を説明するための製造
工程を示した断面図である。工程順は以下のようにな
る。FIG. 2 is a sectional view showing a manufacturing process for explaining an embodiment of a method for manufacturing a germanium-gallium arsenide junction according to the invention of claim 2. The process order is as follows.
（１）ｎ型砒化ガリウム基板１の上にｎ型砒化ガリウム
エピタキシャル層２を成長させる（第２図（ａ））。(1) The n-type gallium arsenide epitaxial layer 2 is grown on the n-type gallium arsenide substrate 1 (FIG. 2 (a)).
（２）砒化ガリウムエピタキシャル層２を成長させた
後、基板温度を下げると砒化ガリウム表面超構造は（２
×２）を示す。砒素雰囲気でない真空中に砒化ガリウム
基板を移動し、引き続き（２×２）砒化ガリウム層２の
上にゲルマニウム膜６を低温たとえば300℃で100Å成長
させる（第２図（ｂ））。このとき、ゲルマニウム膜表
面上には偏析した砒素原子７が存在している。(2) After growing the gallium arsenide epitaxial layer 2 and lowering the substrate temperature, the gallium arsenide surface superstructure becomes (2
X2) is shown. The gallium arsenide substrate is moved into a vacuum that is not an arsenic atmosphere, and then the germanium film 6 is grown on the (2 × 2) gallium arsenide layer 2 at a low temperature, for example, 300 ° C. by 100Å (FIG. 2 (b)). At this time, segregated arsenic atoms 7 are present on the surface of the germanium film.
（３）砒素雰囲気でない真空中で基板温度を500℃に上
昇させゲルマニウム表面に偏析した砒素原子を脱離させ
る（第２図（ｃ））。砒素原子が脱離したことはAESな
どを用いて検出できる。(3) The substrate temperature is raised to 500 ° C. in a vacuum not in an arsenic atmosphere to release the arsenic atoms segregated on the germanium surface (FIG. 2 (c)). The desorption of arsenic atoms can be detected using AES or the like.
（４）引き続いて基板温度を500℃まで上昇させ、ガリ
ウムをドーピングしながらゲルマニウム層４を１μｍ程
度成長させる（第２図（ｄ））。(4) Subsequently, the substrate temperature is raised to 500 ° C., and the germanium layer 4 is grown to about 1 μm while doping gallium (FIG. 2 (d)).
（５）基板を大気中に出し、パターニング、エッチング
により、電極を形成する（第２図（ｅ））。(5) The substrate is exposed to the atmosphere, and an electrode is formed by patterning and etching (FIG. 2 (e)).
以上により、ガリウム、砒素拡散を抑えたゲルマニウ
ム・砒化ガリウム接合が作製できる。As described above, a germanium / gallium arsenide junction with suppressed gallium and arsenic diffusion can be manufactured.
（発明の効果） 請求項１の発明の構造をもつゲルマニウム・砒化ガリ
ウム接合では、以下のことで期待できる。(Effect of the Invention) With the germanium / gallium arsenide junction having the structure of the invention of claim 1, the following can be expected.
（１）砒化ガリウム成長層最上表面を砒素安定化面にし
たのち、基板温度を低温に下げ、ゲルマニウムをごく薄
く成長させるので、砒化ガリウム層からの砒素の拡散を
防ぐとともに、基板表面温度が低いのでガリウムの表面
拡散が小さくなる。その後、基板温度を上昇させてゲル
マニウム成長させるが、砒化ガリウムからのガリウムの
拡散は、個体中を拡散する拡散係数に支配されるので、
表面拡散に比べ非常に小さい。(1) After making the uppermost surface of the gallium arsenide growth layer an arsenic stabilizing surface, the substrate temperature is lowered to a low temperature and germanium is grown very thinly, so that the diffusion of arsenic from the gallium arsenide layer is prevented and the substrate surface temperature is low. Therefore, the surface diffusion of gallium becomes small. After that, the substrate temperature is raised to grow germanium, but the diffusion of gallium from gallium arsenide is governed by the diffusion coefficient that diffuses in the solid.
Very small compared to surface diffusion.
（２）また、砒化ガリウム上ゲルマニウムは低温で成長
させているので結晶性が良好ではないが、後に高温の熱
処理を行っているので結晶性が回復し、膜厚も薄いので
電子の走行には影響を及ぼさない。(2) Further, the crystallinity of germanium on gallium arsenide is not good because it is grown at a low temperature, but the crystallinity is recovered because the heat treatment at a high temperature is performed later, and the film thickness is thin, so that it is not suitable for the traveling of electrons. Has no effect.
請求項２の発明の構造をもつゲルマニウム・砒化ガリ
ウム接合では、以下のことが期待できる。In the germanium / gallium arsenide junction having the structure of the second aspect, the following can be expected.
（１）砒化ガリウム成長層最上表面を（２×２）表面超
構造にしたまま、基板温度を低温に下げゲルマニウムを
薄く成長させる場合には、砒素原子が砒化ガリウム最上
層表面を覆っており、砒化ガリウム表面が活性でないこ
と、基板表面温度が低いので表面拡散係数が小さいこと
により、砒素原子、ガリウム原子ともに拡散は小さくな
る。その後、基板温度を上昇させてゲルマニウムを成長
させるので、ゲルマニウム表面に偏析した砒素原子は再
蒸発し、さらに砒化ガリウムらのガリウム、砒素の拡散
は、個体中を拡散する拡散係数に支配されるので、表面
拡散に比べ非常に小さい。(1) When the substrate temperature is lowered to a low temperature and germanium is thinly grown with the uppermost surface of the gallium arsenide growth layer having a (2 × 2) surface superstructure, arsenic atoms cover the uppermost surface of the gallium arsenide layer, Since the surface of gallium arsenide is not active and the surface temperature of the substrate is low and the surface diffusion coefficient is small, the diffusion of both arsenic atoms and gallium atoms is small. After that, since the substrate temperature is raised to grow germanium, the arsenic atoms segregated on the germanium surface are re-evaporated, and the diffusion of gallium and arsenic such as gallium arsenide is governed by the diffusion coefficient that diffuses in the solid body. , Very small compared to surface diffusion.
（２）また、砒化ガリウム上ゲルマニウムは低温で成長
させているので結晶性か良好ではないが、後に高温の熱
処理を行っているので結晶性が回復し、膜厚も薄いので
電子の走行には影響を及ぼさない。(2) Further, the crystallinity of germanium on gallium arsenide is not good because it is grown at a low temperature, but the crystallinity is recovered because the heat treatment at a high temperature is performed later, and the film thickness is thin, so that it is not suitable for the traveling of electrons. Has no effect.
第１図は請求項１のゲルマニウム・砒化ガリウム接合の
製造工程の１実施例を示す断面図を、第２図は請求項２
の発明のゲルマニウム・砒化ガリウム接合の製造工程の
１実施例を示す断面図を示す。 １……砒化ガリウム基板、２……砒化ガリウムエピタキ
シャル成長層、３……砒素安定化面上に低温成長を行っ
たゲルマニウム層、４……高温成長を行ったゲルマニウ
ム層、５……電極、６……（２×２）表面超構造上に低
温成長を行ったゲルマニウム層、７……表面に偏析した
砒素原子。FIG. 1 is a sectional view showing one embodiment of the manufacturing process of the germanium-gallium arsenide junction of claim 1, and FIG.
FIG. 3 is a cross-sectional view showing one embodiment of the manufacturing process of the germanium / gallium arsenide junction of the invention of FIG. 1 ... Gallium arsenide substrate, 2 ... Gallium arsenide epitaxial growth layer, 3 ... Germanium layer grown at low temperature on arsenic stabilized surface, 4 ... Germanium layer grown at high temperature, 5 ... Electrode, 6 ... … (2 × 2) Germanium layer grown at low temperature on surface superstructure, 7 …… Arsenic atoms segregated on the surface.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 29/86 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display area H01L 29/86
Claims (2)
の製造方法において、砒素安定化面砒化ガリウム上に第
１の基板温度でゲルマニウムを薄く成長させ、そののち
に第１の温度より高い第２の基板温度にしたのち、ゲル
マニウムを成長させることを特徴とするゲルマニウム・
砒化ガリウム接合の製造方法。1. A method of manufacturing a heterojunction of gallium arsenide and germanium, wherein germanium is thinly grown on an arsenic stabilized surface gallium arsenide at a first substrate temperature, and then a second substrate having a temperature higher than the first temperature is formed. Germanium characterized by growing germanium after temperature
Method of manufacturing gallium arsenide junction.
の製造方法において、（２×２）表面超構造砒化ガリウ
ム上に第１の基板温度でゲルマニウムを薄く成長させた
のち、基板温度を上昇させて、ゲルマニウム上の砒素を
蒸発させ、そののちに第１の温度より高い第２の基板温
度で、ゲルマニウムを成長させることを特徴とするゲル
マニウム・砒化ガリウム接合の製造方法。2. A method of manufacturing a heterojunction of gallium arsenide and germanium, wherein germanium is thinly grown on a (2 × 2) surface superstructure gallium arsenide at a first substrate temperature, and then the substrate temperature is raised. A method of manufacturing a germanium-gallium arsenide junction, characterized in that arsenic on germanium is evaporated, and then germanium is grown at a second substrate temperature higher than the first temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1133111A JP2555885B2 (en) | 1989-05-26 | 1989-05-26 | Germanium / gallium arsenide junction manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1133111A JP2555885B2 (en) | 1989-05-26 | 1989-05-26 | Germanium / gallium arsenide junction manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02312222A JPH02312222A (en) | 1990-12-27 |
| JP2555885B2 true JP2555885B2 (en) | 1996-11-20 |
Family
ID=15097067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1133111A Expired - Lifetime JP2555885B2 (en) | 1989-05-26 | 1989-05-26 | Germanium / gallium arsenide junction manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2555885B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6273949B1 (en) * | 1999-09-10 | 2001-08-14 | The Board Of Trustees Of The Leland Stanford Junior University | Method for fabricating orientation-patterned gallium arsenide seeding structures |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191097A (en) * | 1984-10-11 | 1986-05-09 | Nec Corp | Crystal growth |
-
1989
- 1989-05-26 JP JP1133111A patent/JP2555885B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| １９８８年（昭和６３年）秋季第４９回応用物理学会学術講演会講演予稿集、第１分冊Ｐ．２８４、６Ｐ−Ｙ−１６ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02312222A (en) | 1990-12-27 |
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