JP2572782B2 - Filler for semiconductor encapsulation - Google Patents
Filler for semiconductor encapsulationInfo
- Publication number
- JP2572782B2 JP2572782B2 JP62255329A JP25532987A JP2572782B2 JP 2572782 B2 JP2572782 B2 JP 2572782B2 JP 62255329 A JP62255329 A JP 62255329A JP 25532987 A JP25532987 A JP 25532987A JP 2572782 B2 JP2572782 B2 JP 2572782B2
- Authority
- JP
- Japan
- Prior art keywords
- filler
- resin
- parts
- organo
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000000945 filler Substances 0.000 title claims description 12
- 238000005538 encapsulation Methods 0.000 title claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 17
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 125000000962 organic group Chemical group 0.000 description 11
- 239000000565 sealant Substances 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- -1 halogen silanes Chemical class 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 150000003609 titanium compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910003691 SiBr Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- XCLIHDJZGPCUBT-UHFFFAOYSA-N dimethylsilanediol Chemical compound C[Si](C)(O)O XCLIHDJZGPCUBT-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- YGSZIPUVXAXCLY-UHFFFAOYSA-N isocyanosilane Chemical compound [SiH3][N+]#[C-] YGSZIPUVXAXCLY-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910000348 titanium sulfate Inorganic materials 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体封止用充填剤に関するものであり、よ
り詳しくは、半導体チップを樹脂封止するための封止剤
を構成するのに好適な充填剤並びに該封止剤を含有する
封止剤樹脂組成物に関するものである。Description: FIELD OF THE INVENTION The present invention relates to a filler for semiconductor encapsulation, and more particularly, to a sealant for resin-encapsulating a semiconductor chip. And a sealant resin composition containing the sealant.
半導体チップの樹脂封止は、40〜90重量％の充填剤と
60〜10重量％の樹脂成分からなる封止剤を用いて行なわ
れている。Resin encapsulation of semiconductor chips requires 40-90% by weight of filler
It is performed using a sealing agent composed of 60 to 10% by weight of a resin component.
封止剤の熱膨張係数は半導体チップの熱膨張係数に近
いことが必要であり、使用する樹脂の架橋密度を下げて
弾性率を小さくするとか、充填剤量を多くする等の工夫
がなされているが、前者の方法では、封止剤の耐湿性、
寸法安定性、機械的強度等の低下を招く問題がある。ま
た、後者の方法では、封止剤の成形性を損うので更に改
善が望まれていた。The coefficient of thermal expansion of the sealant must be close to the coefficient of thermal expansion of the semiconductor chip, and efforts have been made to reduce the elastic modulus by reducing the crosslink density of the resin used, or to increase the amount of filler. However, in the former method, the moisture resistance of the sealant,
There is a problem that the dimensional stability, mechanical strength and the like are reduced. In the latter method, the moldability of the sealant is impaired, so that further improvement has been desired.
本発明者らは、すぐれた半導体封止剤を製造すべく鋭
意研究を重ねた結果、特定の充填剤を用いるときは比較
的少ない充填剤使用量で希望する熱膨張係数の封止剤を
製造することができ、併せて充填剤使用量が少ないので
封止剤の機械的強度等もすぐれていることを見出し本発
明に到達した。すなわち本発明は半導体封止剤用として
好適な充填剤を提供することを目的とするものであり、
チタニア含有率が１〜20重量％であるシリカチタニア粉
末からなる半導体封止用充填剤からなる。The present inventors have conducted intensive studies to produce an excellent semiconductor encapsulant. As a result, when a specific filler is used, a sealant having a desired coefficient of thermal expansion can be produced using a relatively small amount of filler. In addition, the present inventors have found that since the amount of the filler used is small, the mechanical strength of the sealant is also excellent, and the present invention has been achieved. That is, the present invention aims to provide a filler suitable for semiconductor encapsulants,
It is composed of a semiconductor sealing filler made of silica titania powder having a titania content of 1 to 20% by weight.
本発明のシリカチタニア粉末は、チタニア含有率が１
〜20重量％、好ましくは７〜10重量％である。チタニア
含有率は多過ぎても少過ぎても熱膨張係数を小さくする
ことができなくなり、本発明の効果が期待できなくな
る。The silica titania powder of the present invention has a titania content of 1
-20% by weight, preferably 7-10% by weight. If the titania content is too high or too low, the thermal expansion coefficient cannot be reduced, and the effect of the present invention cannot be expected.
シリカチタニア粉末の製造方法は周知の種々の方法を
採用することができるが、均一組成のものが製造できる
ことから、固体でない原料から出発することが好まし
く、この意味でシリコン化合物としては各種の有機硅素
化合物を使用することができる。より具体的には、 SiH4、（C6H5）3SiH、（C2H5）2SiH2、（CH3）4S
i、（CH3）3SiC2H5等の（オルガノ）シラン HSiCl3、SiCl4、（CH3）2SiCl2、（C6H5）3SiBr等
の（オルガノ）ハロゲンシラン Si（OCH3）４、Si（OC2H5）４、（CH3）2Si（OC
H3）２等の（オルガノ）アルコキシまたは（オルガノ）
アリールオキシシラン （CH3）2Si（OH）２、C6H5Si（OH）３等の（オルガ
ノ）シラノール （CH3）2Si（OCOCH3）２、〔（CH3）3SiO〕2SO2等
の（オルガノ）シラノールエステル （CH3）3SiOSi（CH3）３、（CH3）3SiOSi（CH3）2O
Si（CH3）３等の（オルガノ）ポリシロキサン （CH3）SiNHSi（CH3）３、（C2H5）2SiNH2等の（オ
ルガノ）シラザン （CH3）3SiSSi（CH3）３、〔（CH3）2SiS〕２等の
（オルガノ）シルチアン （C2H5）3SiNC、（CH3）3SiNCS等の（オルガノ）イ
ソシアンシラン などが挙げられる。〔以上においてオルガノに（）を付
したのは硅素原子に直結する水素原子の一部又は全部
が、炭化水素残基で置換されていても良いという意味で
ある。〕 チタン化合物としては、上記シリコン化合物と対応す
るチタン化合物あるいは硫酸チタン等の塩類などが挙げ
られる。Various well-known methods can be used for producing the silica titania powder. However, since a homogeneous composition can be produced, it is preferable to start from a non-solid raw material. In this sense, various organic silicon materials are used as the silicon compound. Compounds can be used. More specifically, SiH 4 , (C 6 H 5 ) 3 SiH, (C 2 H 5 ) 2 SiH 2 , (CH 3 ) 4 S
i, (organo) silanes such as (CH 3 ) 3 SiC 2 H 5 (organo) halogen silanes such as HSiCl 3 , SiCl 4 , (CH 3 ) 2 SiCl 2 , (C 6 H 5 ) 3 SiBr Si (OCH 3 ) 4 , Si (OC 2 H 5 ) 4 , (CH 3 ) 2 Si (OC
H 3 ) 2 etc. (organo) alkoxy or (organo)
(Organo) silanol (CH 3 ) 2 Si (OCOCH 3 ) 2 such as aryloxysilane (CH 3 ) 2 Si (OH) 2 , C 6 H 5 Si (OH) 3 , [(CH 3 ) 3 SiO] 2 (Organo) silanol esters such as SO 2 (CH 3 ) 3 SiOSi (CH 3 ) 3 , (CH 3 ) 3 SiOSi (CH 3 ) 2 O
Si (CH 3) 3, etc. (organo) polysiloxane (CH 3) SiNHSi (CH 3 ) 3, (C 2 H 5) 2 SiNH 2 , etc. (organo) silazane (CH 3) 3 sissi (CH 3) 3 And (organo) silthiane (C 2 H 5 ) 3 SiNC such as [(CH 3 ) 2 SiS] 2 , and (organo) isocyan silane such as (CH 3 ) 3 SiNCS. [In the above, the addition of () to the organo means that some or all of the hydrogen atoms directly connected to the silicon atoms may be substituted with hydrocarbon residues. Examples of the titanium compound include a titanium compound corresponding to the silicon compound and salts such as titanium sulfate.
上記シリコン化合物とチタン化合物を適当な溶媒を用
いて均一に溶合し、例えば水を加えて加水分解を行なっ
たり、高温に加熱した炉中に混合溶液を噴霧する等の方
法によりシリカチタニア粉を作成することができる。The silicon compound and the titanium compound are uniformly mixed using an appropriate solvent, and for example, hydrolysis is performed by adding water, or the silica titania powder is sprayed by a method such as spraying the mixed solution in a furnace heated to a high temperature. Can be created.
このシリカチタニア粉をボールミル、擂潰機等の粉砕
機で粉砕を行ない、１μｍ以上100μｍ以下、好ましく
は10μｍ以上30μｍ以下に分級を行ない、半導体樹脂封
止用充填剤とする。This silica titania powder is pulverized by a pulverizer such as a ball mill or a crusher, and classified into 1 μm or more and 100 μm or less, preferably 10 μm or more and 30 μm or less to obtain a filler for semiconductor resin sealing.
本発明のシリカチタニア粉は樹脂と混合して半導体チ
ップを樹脂封止するための封止剤とする。好適な樹脂と
しては、エポキシ樹脂、フェノール樹脂、シリコン樹
脂、ポリイミド樹脂のような熱硬化性樹脂、ポリフェニ
レンサルファイド樹脂、線状ポリエステル樹脂、液晶ポ
リマーのような熱可塑性樹脂等があげられる。The silica titania powder of the present invention is mixed with a resin to form a sealing agent for sealing a semiconductor chip with a resin. Suitable resins include thermosetting resins such as epoxy resins, phenolic resins, silicone resins, and polyimide resins, polyphenylene sulfide resins, linear polyester resins, and thermoplastic resins such as liquid crystal polymers.
シリカチタニア粉末と樹脂の混合割合は、重量比で9
0:10〜40:60好ましくは、75:25〜55:45の範囲から選ぶ
のがよい。シリカチタニア粉の量があまり少ないと、熱
膨張係数が半導体チップの熱膨張係数を大きく上回るよ
うになる。逆にあまりに多いと成形性を損いやすい。The mixing ratio of silica titania powder and resin is 9 by weight.
0:10 to 40:60, preferably 75:25 to 55:45. If the amount of the silica titania powder is too small, the thermal expansion coefficient greatly exceeds the thermal expansion coefficient of the semiconductor chip. Conversely, if it is too large, the moldability tends to be impaired.
半導体チップの封止は周知の方法に従って、熱硬化性
樹脂を用いる場合は、シリカチタニア粉を含有するプレ
ポリマーを用いて成形して硬化させる方法、または熱可
塑性樹脂を用いる場合はシリカチタニア粉を含有する樹
脂で溶融成形すればよい。Encapsulation of the semiconductor chip is performed according to a known method.When using a thermosetting resin, a method of molding and curing using a prepolymer containing silica titania powder, or when using a thermoplastic resin, using silica titania powder. What is necessary is just to melt-mold with the contained resin.
以下の実施例によって本発明を具体的に説明するが、本
発明はその要旨をこえない限り以下の実施例に限定され
るものではない。The present invention will be specifically described by the following examples, but the present invention is not limited to the following examples unless it exceeds the gist.
なお、実施例中の「部」および「％」はそれぞれ「重
量部」および「重量％」を示す。In the examples, "parts" and "%" indicate "parts by weight" and "% by weight", respectively.
実施例１ テトラメトキシシラン7.1部、テトライソプロポキシ
チタン１部およびメタノール8.1部を混合し、撹拌しな
がらこれに水3.6部、メタノール8.1部そして酢酸0.05部
の混合液を６時間かけて滴下して加水分解を行った。滴
下後0.5時間撹拌した後、12時間放置してゲル化を行っ
た。得られたゲルを120℃、12時間乾燥し、粉砕後500メ
ッシュパスした粉体を900℃で１時間焼成した。Example 1 7.1 parts of tetramethoxysilane, 1 part of tetraisopropoxytitanium and 8.1 parts of methanol were mixed, and a mixture of 3.6 parts of water, 8.1 parts of methanol and 0.05 part of acetic acid was added dropwise with stirring over 6 hours. Hydrolysis was performed. After the addition, the mixture was stirred for 0.5 hour, and then left standing for 12 hours to perform gelation. The obtained gel was dried at 120 ° C. for 12 hours, and after pulverization, the powder passed 500 mesh was fired at 900 ° C. for 1 hour.
得られたシリカチタニア粉は、チタニア含有率9.8％
で平均粒径は17.3μｍであった。The obtained silica titania powder has a titania content of 9.8%
And the average particle size was 17.3 μm.
このシリカチタニア粉291部に対して樹脂としてクレ
ゾールノボラックエポキシ樹脂100部、フェノールノボ
ラック系硬化剤50部、硬化促進剤として２−メチルイミ
ダゾール２部、改質材としてエポキシシランカップリン
グ剤２部、離形剤としてカルナバワックス２部、顔料と
してカーボンブラック１部を混合し、加熱ロールで80
℃、15分間混練し、冷却後粉砕して半導体封止用プレポ
リマーを得た。成型性試験として、このプレポリマーを
用い温度175℃、圧力70kg/cm2の条件でスパイラルフロ
ー長の測定を行なった。また、上記プレポリマーを温度
180℃、５分、圧力70kg/cm2の条件でトランスファー成
形した後、170℃で５時間ポストキュアーを行ない熱膨
張率測定用試験片を作成し、島津熱機械的分析装置TMA
−30型で熱膨張率を測定した。結果を第１表に示す。To 291 parts of the silica titania powder, 100 parts of a cresol novolak epoxy resin as a resin, 50 parts of a phenol novolak-based curing agent, 2 parts of 2-methylimidazole as a curing accelerator, 2 parts of an epoxysilane coupling agent as a modifier, Mix 2 parts of carnauba wax as a shaper and 1 part of carbon black as a pigment,
The mixture was kneaded at 15 ° C for 15 minutes, cooled and pulverized to obtain a prepolymer for encapsulating a semiconductor. As a moldability test, a spiral flow length was measured using this prepolymer under the conditions of a temperature of 175 ° C. and a pressure of 70 kg / cm 2 . In addition, the above prepolymer is heated to a temperature.
After transfer molding under the conditions of 180 ° C for 5 minutes and a pressure of 70 kg / cm 2 , post-curing was performed at 170 ° C for 5 hours to prepare a test piece for measuring thermal expansion coefficient, and a Shimadzu thermomechanical analyzer TMA was used.
The coefficient of thermal expansion was measured with a -30 type. The results are shown in Table 1.
〔比較例１〕 実施例におけるシリカチタニア粉の代わりに、平均粒
径15.3μｍの石英粉を用い、他の条件は実施例と同一に
してプレポリマーを作成し実施例と同一の測定を行なっ
た。[Comparative Example 1] Instead of silica titania powder in the examples, quartz powder having an average particle size of 15.3 µm was used, and the other conditions were the same as in the examples to prepare a prepolymer, and the same measurements as in the examples were performed. .
〔比較例２〕 実施例におけるシリカチタニア粉の代わりに平均粒径
15.3μｍの石英粉349部を用い、他の条件は実施例と同
一にしてプレポリマーを作成し、実施例と同一の測定を
行った。Comparative Example 2 Average Particle Size Instead of Silica Titania Powder in Examples
A prepolymer was prepared using 349 parts of 15.3 μm quartz powder and the other conditions were the same as in the example, and the same measurement as in the example was performed.
上記の結果からわかるように、本発明のシリカチタニ
アを用いたときは、同量のシリカを用いた場合に比して
熱膨張率が14％ も小さくし、しかも流動性も改善されている。なお、熱
膨張率を小さくするためにシリカを多量に用いた場合
（比較例２）には、流動性を大きく損なう。 As can be seen from the above results, when the silica titania of the present invention was used, the coefficient of thermal expansion was 14% as compared with the case where the same amount of silica was used. And the fluidity has also been improved. When a large amount of silica is used to reduce the coefficient of thermal expansion (Comparative Example 2), the fluidity is significantly impaired.
本発明の充填剤を用いるときは、熱膨張率が小さく、
流動性のよい半導体封止剤を得ることができるので工業
的価値が大きい。When using the filler of the present invention, the coefficient of thermal expansion is small,
Since a semiconductor encapsulant having good fluidity can be obtained, it has great industrial value.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭50−145499（ＪＰ，Ａ) 特開 昭59−203303（ＪＰ，Ａ) 特開 昭62−136861（ＪＰ，Ａ) 特開 昭62−192443（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-50-145499 (JP, A) JP-A-59-203303 (JP, A) JP-A-62-136861 (JP, A) 192443 (JP, A)
Claims (1)
カチタニア粉末からなる半導体封止用充填剤。A filler for semiconductor encapsulation comprising silica titania powder having a titania content of 1 to 20% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62255329A JP2572782B2 (en) | 1987-10-09 | 1987-10-09 | Filler for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62255329A JP2572782B2 (en) | 1987-10-09 | 1987-10-09 | Filler for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0196951A JPH0196951A (en) | 1989-04-14 |
| JP2572782B2 true JP2572782B2 (en) | 1997-01-16 |
Family
ID=17277274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62255329A Expired - Lifetime JP2572782B2 (en) | 1987-10-09 | 1987-10-09 | Filler for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2572782B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50145499A (en) * | 1974-05-15 | 1975-11-21 | ||
| JPS59203303A (en) * | 1983-05-04 | 1984-11-17 | 松下電工株式会社 | Sealing thermosetting resin molding material and electronic part molded by using same |
| JPS62136861A (en) * | 1985-12-10 | 1987-06-19 | Nitto Electric Ind Co Ltd | Resin sealed semiconductor device |
| JPS62192443A (en) * | 1986-02-18 | 1987-08-24 | Matsushita Electric Works Ltd | Epoxy resin molding material for sealing |
-
1987
- 1987-10-09 JP JP62255329A patent/JP2572782B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0196951A (en) | 1989-04-14 |
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