JP2576285B2 - Magneto-optical recording medium manufacturing method - Google Patents
Magneto-optical recording medium manufacturing methodInfo
- Publication number
- JP2576285B2 JP2576285B2 JP32197490A JP32197490A JP2576285B2 JP 2576285 B2 JP2576285 B2 JP 2576285B2 JP 32197490 A JP32197490 A JP 32197490A JP 32197490 A JP32197490 A JP 32197490A JP 2576285 B2 JP2576285 B2 JP 2576285B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magneto
- recording medium
- optical recording
- gdfecoti
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title description 15
- 239000010410 layer Substances 0.000 claims description 53
- 239000011241 protective layer Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000992 sputter etching Methods 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 13
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910005438 FeTi Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光磁気記録媒体製造方法、特に、磁気光学効
果を利用してレーザー光により情報の記録・再生を行な
う光磁気記録媒体製造方法に関する。Description: FIELD OF THE INVENTION The present invention relates to a method of manufacturing a magneto-optical recording medium, and more particularly to a method of manufacturing a magneto-optical recording medium in which information is recorded / reproduced by laser light utilizing a magneto-optical effect. .
従来、光磁気記録媒体の記録特性,再生特性の向上を
目的として、光磁気記録層として交換結合力の働いた2
層の磁性膜を用いたものが提案されており(特開昭57−
78652号)、本発明者らもガドリニウム・鉄・コバルト
・チタンの非晶質合金からなる垂直磁化可能で高い耐酸
化性を有しかつ高いキュリー温度を示す再生特性のよい
低保磁力を有する読出層(以下、GdFeCoTi層という)
と、テルビウム、鉄・チタンの非晶質合金からなる垂直
磁化可能で高い耐酸化性を有しかつ低いキュリー温度を
示す記録特性のよい高保磁力を有する書込層(以下、Tb
FeTi層という)とを順次積層し、少ないレーザー光エネ
ルギーでTbFeTi層に書き込んだビット(部分的磁化反転
領域)を磁気光学効果の大きいGdFeCoTi層に交換結合力
により転写し、TbFeTi層の側から読み出すものを既に提
案している(特開平1−125609)。Conventionally, an exchange coupling force has been applied as a magneto-optical recording layer for the purpose of improving the recording and reproducing characteristics of a magneto-optical recording medium.
A device using a magnetic layer has been proposed (Japanese Patent Laid-Open No.
No. 78652), the present inventors have also made a perpendicular magnetization made of an amorphous alloy of gadolinium / iron / cobalt / titanium and have high oxidation resistance and high Curie temperature. Layer (hereinafter referred to as GdFeCoTi layer)
And a write layer (hereinafter referred to as Tb) having perpendicular magnetization, which is made of an amorphous alloy of terbium and iron / titanium, has high oxidation resistance, and has a low Curie temperature and a high coercive force with good recording characteristics.
Bits (partial magnetization reversal regions) written in the TbFeTi layer with a small amount of laser light energy are transferred to the GdFeCoTi layer with a large magneto-optical effect by exchange coupling force, and read from the TbFeTi layer side. One has already been proposed (JP-A-1-125609).
次に、従来の光磁気記録媒体製造方法について、図面
を用いて説明する。第3図は従来の一例を説明するため
の製造工程図、第4図は第3図に示す従来例を用いて光
磁気記録媒体の概略断面図である。Next, a conventional method for manufacturing a magneto-optical recording medium will be described with reference to the drawings. FIG. 3 is a manufacturing process diagram for explaining one example of a conventional example, and FIG. 4 is a schematic sectional view of a magneto-optical recording medium using the conventional example shown in FIG.
図において、1は基板、2は保護層、23はガドリニウ
ム・鉄・コバルト・チタン(GdFeCoTi)の非晶質合金か
らなるGdFeCoTi層、24はテレビウム・鉄・チタン(TbFe
Ti)の非晶質合金からなTbFeTi層、25は保護層である。In the figure, 1 is a substrate, 2 is a protective layer, 23 is a GdFeCoTi layer made of an amorphous alloy of gadolinium / iron / cobalt / titanium (GdFeCoTi), and 24 is TVium / iron / titanium (TbFe
A TbFeTi layer made of an amorphous alloy of Ti), 25 is a protective layer.
基板1としてはフォトポリマー(以下2Pと略称する)
のついたガラス板や、2Pのついたエポキシ樹脂板や、ポ
リカーボネイト樹脂板等が用いられ、保護層2および25
としては窒化シリコンや酸窒化シリコン等が用いられ
る。このような光磁気記録媒体の各層の成膜は通常スパ
ッタ装置が用いられる。The substrate 1 is a photopolymer (hereinafter abbreviated as 2P)
, An epoxy resin plate with 2P, a polycarbonate resin plate, etc. are used.
For example, silicon nitride or silicon oxynitride is used. For forming each layer of such a magneto-optical recording medium, a sputtering apparatus is usually used.
従来の光磁気記録媒体の製造方法は、第3図に示すよ
うに、基板製造工程aで基板1をスパッタ装置内に装着
して、スパッタ装置真空排気工程bで真空排気した後
に、基板スパッタエッチング工程cで基板1をスパッタ
エッチングし保護層成膜工程dで保護層2を成膜し、次
にGdFeCoTi層成膜工程eでGdFeCoTi層23を成膜し、次に
TbFeTi層成膜工程gでTbFeTi層24を成膜し、最後に保護
層成膜工程hで保護層25を成膜し、このようにして製造
された光磁気記録媒体をスパッタ装置から光磁気記録媒
体取出工程iで取り出すものである。As shown in FIG. 3, a conventional method of manufacturing a magneto-optical recording medium includes mounting a substrate 1 in a sputtering apparatus in a substrate manufacturing step a, evacuating the substrate in a sputtering apparatus evacuation step b, and then performing substrate sputter etching. In step c, the substrate 1 is sputter-etched to form a protective layer 2 in a protective layer forming step d, and then a GdFeCoTi layer 23 is formed in a GdFeCoTi layer forming step e.
A TbFeTi layer 24 is formed in a TbFeTi layer forming step g, and a protective layer 25 is formed in a protective layer forming step h. The magneto-optical recording medium thus manufactured is subjected to magneto-optical recording by a sputtering apparatus. It is taken out in the medium taking out step i.
なお、保護層2を成膜する前に基板と保護層との付着
力を強めるために基板表面を少しスパッタエッチングし
たがこれは省略してもよい。Before the formation of the protective layer 2, the surface of the substrate was slightly sputter-etched in order to strengthen the adhesion between the substrate and the protective layer, but this may be omitted.
しかしながら、このような上述した従来の光磁気記録
媒体製造方法で製造した光磁気記録媒体は、作製するス
パッタ装置の違いによりビットエラーレイト(BER)が
よくなったり悪くなったりするという問題があった。However, the magneto-optical recording medium manufactured by the above-described conventional method for manufacturing a magneto-optical recording medium has a problem that a bit error rate (BER) is improved or deteriorated depending on a different sputtering apparatus to be manufactured. .
本発明者らはこの問題を解決すべく鋭意検討した結
果、BERが悪くなるのは読出層と書込層との間に働く交
換結合力が強すぎるためであることを見出し、本発明に
至った。The present inventors have conducted intensive studies to solve this problem, and as a result, have found that the BER deteriorates because the exchange coupling force acting between the read layer and the write layer is too strong. Was.
本発明の光磁気記録媒体の製造方法は、ガドリニウム
・鉄・コバルト・チタンの非晶質合金からなる垂直磁化
可能で高キュリー点を有する低保磁力層と、テルビウム
・鉄・チタンの非晶質合金からなる垂直磁化可能で低キ
ュリー点を有する高保磁力層とを順次積層し、該低保磁
力層と該高保磁力層とは交換結合力を働かせる光磁気記
録媒体の製造方法であって、前記高保磁力層は前記低保
磁力層の表面をスパッタエッチングすることにより平坦
化したのち成膜することにより前記低保磁力層と前記高
保磁力層との間に働く交換結合力を弱くするように構成
される。The method of manufacturing a magneto-optical recording medium according to the present invention includes a low coercivity layer having perpendicular magnetization and a high Curie point, which is made of an amorphous alloy of gadolinium / iron / cobalt / titanium; A method for manufacturing a magneto-optical recording medium, in which a high coercivity layer having perpendicular magnetization and a low Curie point made of an alloy is sequentially laminated, and the low coercivity layer and the high coercivity layer act on exchange coupling force. The high coercivity layer is configured so as to weaken the exchange coupling force acting between the low coercivity layer and the high coercivity layer by forming a film after flattening the surface of the low coercivity layer by sputter etching. Is done.
次に、本発明の実施例について図面を参照して説明す
る。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の一実施例を説明するための製造工程
図であり、第2図は第1図に示す実施例を用いて製造さ
れた光磁気記録体の概略断面図である。FIG. 1 is a manufacturing process diagram for explaining one embodiment of the present invention, and FIG. 2 is a schematic sectional view of a magneto-optical recording material manufactured using the embodiment shown in FIG.
図において、1は基板、2は保護層であり、3はGdFe
CoTiの非晶質合金を成膜したのちその表面を少しスパッ
タエッチングすることにより平坦化して読出層としたも
のであり、4はその上に成膜したTbFeTiの非晶質合金か
らなる書込層、5はその上に成膜した保護層である。In the figure, 1 is a substrate, 2 is a protective layer, and 3 is GdFe
After forming an amorphous alloy of CoTi, the surface is slightly flattened by sputter etching to form a readout layer, and 4 is a writing layer made of an amorphous alloy of TbFeTi formed thereon. Reference numeral 5 denotes a protective layer formed thereon.
本発明の光磁気記録媒体製造方法で製造した光磁気記
録媒体はTbFeTiの成膜を、GdFeCoTi表面をスパッタエッ
チングすることにより平坦化したのちに行なうことによ
り、GdFeCoTi膜の読出層とTbFeTi膜の書込層との間に働
く交換結合力が弱くなる現象を利用している。The magneto-optical recording medium manufactured by the method of manufacturing a magneto-optical recording medium of the present invention is formed by forming a TbFeTi film after flattening the surface of the GdFeCoTi by sputter etching, so that the reading layer of the GdFeCoTi film and the TbFeTi film are written. It utilizes the phenomenon that the exchange coupling force acting between the embedded layers is weakened.
膜表面をスパッタエッチングすると、本発明者らが行
なった実験の範囲では一般的に膜表面は平坦となるよう
である。この確認はレプリカ法により約20万倍の透過型
電子顕微鏡写真により行なった。平坦となる理由は、ス
パッタエッチングを行なっているアルゴンイオンの膜表
面への入射角度が垂直入射された以外にも種々の角度を
もっているためと思われる。When the film surface is sputter-etched, the film surface generally seems to be flat within the scope of the experiments performed by the present inventors. This confirmation was made by a transmission electron microscope photograph of about 200,000 times by the replica method. It is considered that the reason why the surface becomes flat is that the angle of incidence of the argon ion being sputter-etched on the film surface has various angles in addition to the perpendicular incidence.
GdFeCoTi膜表面をスパッタエッチングすることにより
平坦化したのちにTbFeTiを成膜する場合にスパッタエッ
チングしないときよりも交換結合力が弱くなる理由は定
かではないが、TbFeTi膜の膜成長時に下地表面形状によ
って誘導形成される磁気特性が異なるためと思われる。
この性質は材料によって異なる。The reason why the exchange coupling force is weaker when sputter-etching the TbFeTi film than after not sputter-etching when forming the TbFeTi film after flattening the GdFeCoTi film surface by sputter etching is unknown, but depending on the underlying surface shape during the growth of the TbFeTi film film This is probably because the induced magnetic properties are different.
This property depends on the material.
なお、成膜するスパッタ装置によって交換結合力が異
なる理由は読出層形成後から書込層形成までの間の膜表
面の雰囲気が一定ではないためと思われる。The reason why the exchange coupling force differs depending on the sputtering apparatus for forming a film is presumably because the atmosphere on the film surface is not constant after the formation of the readout layer until the formation of the write layer.
次に、本発明の実施例について、図面を参照しながら
具体的に説明する。Next, embodiments of the present invention will be specifically described with reference to the drawings.
第1図に示すように、基板装着工程aで基板1をスパ
ッタ装置内に装着し、スパッタ装置真空排気工程hで3
×10-7Torr以下に真空排気後、基板スパッタエッチング
工程cでアルゴンガスを導入して基板1をおよそ10Å程
度スパッタエッチングし、ひきつづき保護層成膜工程d
でアルゴンと窒素との混合ガスを導入してシリコンター
ゲットを反応性スパッタすることにより800Å厚の窒化
シリコンの保護層2を形成した。次に、GdFeCoTi層成膜
工程eでアルゴンガスを導入してGdFeCoTiターゲットを
スパッタすることにより原子%で、23.4対62.8対12.5対
1.3のGdFeCoTi膜3でおよそ210Å厚の膜を形成し、次に
GdFeTi層スパッタエッチング工程dでこの表面をアルゴ
ンガスでおよそ10Å程度スパッタエッチングしてGdFeCo
Ti膜表面を比較的平坦にして読出層とした。しかる後Td
FeTi層成膜工程gにおいてアルゴンガスでTbFeTiターゲ
ットをスパッタすることにより原子%で20.0対78.4対1.
6のTbFeTi膜4でおよそ1000Å厚の膜を形成し、前記読
出層と弱く交換結合した書込層を形成した。最後に、保
護層成膜工程hでアルゴンと窒素との混合ガスでシリコ
ンターゲットを反応性スパッタすることにより800Å厚
の窒化シリコンの保護層5を形成した。このようにして
製造された光磁気記録媒体は光磁気記録媒体取出工程i
でスパッタ装置の外に取り出される。As shown in FIG. 1, the substrate 1 is mounted in a sputtering apparatus in a substrate mounting step a, and 3
After evacuating to a pressure of 10-7 Torr or less, the substrate 1 is sputter-etched by about 10 ° by introducing an argon gas in a substrate-sputtering-etching step c.
Then, a mixed gas of argon and nitrogen was introduced, and a silicon target was reactively sputtered to form a 800-nm-thick silicon nitride protective layer 2. Next, in a GdFeCoTi layer forming step e, an argon gas is introduced and a GdFeCoTi target is sputtered to obtain 23.4 to 62.8 to 12.5 by atomic%.
A GdFeCoTi film 3 of 1.3 forms a film of about 210 mm thickness,
In the GdFeTi layer sputter etching step d, this surface is sputter-etched with argon
The surface of the Ti film was made relatively flat to form a readout layer. Td
In the FeTi layer forming step g, the TbFeTi target was sputtered with an argon gas to obtain 20.0 to 78.4 to 1.
A TbFeTi film 4 of No. 6 was formed to a thickness of about 1000 ° to form a write layer weakly exchange-coupled to the read layer. Finally, in a protective layer forming step h, a silicon target was reactively sputtered with a mixed gas of argon and nitrogen to form a 800-nm-thick protective layer 5 of silicon nitride. The magneto-optical recording medium manufactured in this manner is subjected to a magneto-optical recording medium removal step i.
And is taken out of the sputtering apparatus.
この製造された光磁気記録媒体のカーヒステリシスル
ープは、150℃においてTbFeTi膜をつけていないときの
ようなループ形状を示し、交換結合力を利用した光磁気
記録媒体として望ましいものであった。The Kerr hysteresis loop of the manufactured magneto-optical recording medium exhibited a loop shape at 150 ° C. as if no TbFeTi film was formed, and was desirable as a magneto-optical recording medium utilizing exchange coupling force.
TbFeTi膜をつけていない場合のループ形状に似ている
ということはGdFeCoTi膜とTbFeTi膜との交換結合力が弱
くなっていることを意味している。The resemblance of the loop shape without the TbFeTi film means that the exchange coupling force between the GdFeCoTi film and the TbFeTi film is weak.
比較のために、GdFeCoTi膜表面をスパッタエッチング
せずにその上にTbFeTi膜を形成して作製した光磁気記録
媒体では150℃でもTbFeTi膜の影響をうけて角形成のよ
いループのままであり、交換結合力がかなり強く作製さ
れていた。For comparison, in a magneto-optical recording medium fabricated by forming a TbFeTi film on the surface of the GdFeCoTi film without sputter etching, the loop remains well formed at 150 ° C. under the influence of the TbFeTi film, The exchange coupling force was made quite strong.
このような状態は読出層の磁化の向きにより書込層へ
の磁化の書込みが影響をうけるので、光磁気記録媒体と
しては望ましくない。Such a state is not desirable for a magneto-optical recording medium because the writing of the magnetization to the writing layer is affected by the direction of the magnetization of the reading layer.
上記実施例の光磁気記録媒体を光ディスク評価装置で
BER評価したところ良好であったが、比較例で作製した
光磁気記録媒体は不充分であった。Using the magneto-optical recording medium of the above embodiment with an optical disk evaluation device
Although the BER evaluation was good, the magneto-optical recording medium produced in the comparative example was insufficient.
なお、上述した実施例では基板スパッタエッチング工
程を行なう例を示したが、これは基板と保護層との付着
力を強めるためのもので、必ずしも必要なものではな
い。In the above-described embodiment, the example in which the substrate sputter etching step is performed is shown. However, this is not necessarily required, but is for enhancing the adhesion between the substrate and the protective layer.
本発明の光磁気記録媒体製造方法は、GdFeCoTi膜の表
面をスパッタエッチングして平坦にし、その上にTbFeTi
膜を形成することにより、交換結合力が適度に弱い読出
層と書込層を形成できるため、記録特性・再生特性がと
もによい光磁気記録媒体の製造することができるという
効果がある。In the method of manufacturing a magneto-optical recording medium of the present invention, the surface of a GdFeCoTi film is flattened by sputter etching, and TbFeTi
By forming the film, it is possible to form a read layer and a write layer whose exchange coupling force is appropriately weak, and thus it is possible to manufacture a magneto-optical recording medium having good recording characteristics and reproduction characteristics.
第1図は本発明の一実施例を説明するための製造工程
図、第2図は第1図に示す実施例を用いて製造された光
磁気記録媒体の概略断面図、第3図は従来の一例を説明
するための製造工程図、第4図は第3図に示す従来例を
用いて製造された光磁気記録媒体の概略断面図である。 1……基板、2,5,25……保護層、3,23……GdFeCoTi層、
4,24……TbFeTi層、 a……基板装着工程、b……スパッタ装置真空排気工
程、c……基板スパッタエッチング工程、d……保護層
成膜工程、e……GdFeCoTi層成膜工程、f……GdFeCoTi
層スパッタエッチング工程、g……TbFeTi層成膜工程、
h……保護層成膜工程、i……光磁気記録媒体取出工
程。1 is a manufacturing process diagram for explaining one embodiment of the present invention, FIG. 2 is a schematic sectional view of a magneto-optical recording medium manufactured by using the embodiment shown in FIG. 1, and FIG. FIG. 4 is a schematic sectional view of a magneto-optical recording medium manufactured by using the conventional example shown in FIG. 1 ... substrate, 2,5,25 ... protective layer, 3,23 ... GdFeCoTi layer,
4, 24 ... TbFeTi layer, a ... substrate mounting step, b ... sputtering apparatus evacuation step, c ... substrate sputter etching step, d ... protective layer film forming step, e ... GdFeCoTi layer film forming step, f ... GdFeCoTi
Layer sputter etching step, g ... TbFeTi layer film forming step,
h: protective layer forming step, i: magneto-optical recording medium take-out step.
Claims (1)
成膜工程と、前記保護層の上にガドリニウム・鉄・コバ
ルト・チタンの非晶質合金からなる垂直磁化可能で高キ
ュリー点を有する低保磁力の読出層を形成するGdFeCoTi
層成膜工程と、このGdFeCoTi層をスパッタエッチングす
るGdFeCoTi層スパッタエッチング工程と、前記GdFeCoTi
層の上に、テルビウム・鉄・チタンの非晶質合金からな
る垂直磁化可能で低キュリー点を有する高保磁力の書込
層を形成するTbFeTi層成膜工程と、前記TbFeTi層の上に
保護層を形成する第2の保護層成膜工程とを含むことを
特徴とする光磁気記録媒体製造方法。A first protective layer forming step of forming a protective layer on a substrate; and a vertically magnetizable and high-magnetizable amorphous alloy of gadolinium / iron / cobalt / titanium on the protective layer. GdFeCoTi forming low coercivity readout layer with Curie point
A GdFeCoTi layer sputter etching step of sputter-etching the GdFeCoTi layer;
A TbFeTi layer forming step of forming a perpendicularly magnetizable and high coercive force writing layer having a low Curie point composed of an amorphous alloy of terbium, iron and titanium on the layer, and a protective layer on the TbFeTi layer. And a second protective layer forming step of forming a magnetic recording medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32197490A JP2576285B2 (en) | 1990-11-26 | 1990-11-26 | Magneto-optical recording medium manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32197490A JP2576285B2 (en) | 1990-11-26 | 1990-11-26 | Magneto-optical recording medium manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04195750A JPH04195750A (en) | 1992-07-15 |
| JP2576285B2 true JP2576285B2 (en) | 1997-01-29 |
Family
ID=18138509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32197490A Expired - Lifetime JP2576285B2 (en) | 1990-11-26 | 1990-11-26 | Magneto-optical recording medium manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2576285B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5498485A (en) * | 1992-01-21 | 1996-03-12 | Sharp Kabushiki Kaisha | Magneto-optical recording medium and manufacturing method thereof |
-
1990
- 1990-11-26 JP JP32197490A patent/JP2576285B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04195750A (en) | 1992-07-15 |
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