JP2580628B2 - Thermistor - Google Patents
ThermistorInfo
- Publication number
- JP2580628B2 JP2580628B2 JP62259309A JP25930987A JP2580628B2 JP 2580628 B2 JP2580628 B2 JP 2580628B2 JP 62259309 A JP62259309 A JP 62259309A JP 25930987 A JP25930987 A JP 25930987A JP 2580628 B2 JP2580628 B2 JP 2580628B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor element
- thermistor
- diffusion
- protective layer
- internal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 39
- 239000011241 protective layer Substances 0.000 claims description 24
- 239000010410 layer Substances 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000010304 firing Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 7
- 230000002265 prevention Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 230000032683 aging Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 Mg oxide Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体セラミックからなるサーミスタ素子の
周囲にこれとの間で相互拡散を生じるセラミックからな
る保護層を一体焼成したサーミスタに関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermistor obtained by integrally firing a protective layer made of a ceramic which causes mutual diffusion between the thermistor element made of a semiconductor ceramic and the periphery thereof.
従来の技術 サーミスタには、第９図に示す如く半導体セラミック
からなる層状のサーミスタ素子21の両面に一対の内部電
極22,22を有し、更にその外側にサーミスタ素子を電気
的、機械的に保護すべくセラミックからなる絶縁性の保
護層23,23を配した構成のものを、一体焼成により作成
したものがある。2. Description of the Related Art As shown in FIG. 9, a thermistor has a pair of internal electrodes 22, 22 on both sides of a layered thermistor element 21 made of a semiconductor ceramic, and furthermore, electrically and mechanically protects the thermistor element on the outside thereof. There is a configuration in which insulating protective layers 23, 23 made of ceramic are disposed as much as possible, and the configuration is formed by integral firing.
発明が解決しようとする問題点 ところで、斯かるサーミスタはサーミスタ素子と保護
層との間に薄い層状の内部電極を挟んだ状態で焼成され
るため、サーミスタ素子と保護層との間で相互に拡散が
生じてサーミスタ素子の拡散部に組成変化が起こる。Problems to be Solved by the Invention Incidentally, such a thermistor is fired in a state where a thin layered internal electrode is sandwiched between the thermistor element and the protective layer, so that the thermistor diffuses between the thermistor element and the protective layer. Occurs, and a composition change occurs in the diffusion portion of the thermistor element.
この結果、前記拡散部においてはエージング特性が低
下し、また抵抗値及び所謂サーミスタ定数が所望値から
変動することになり、サーミスタとして必要な特性を確
保できず、また歩留りが悪いという問題点があった。As a result, in the diffusion section, the aging characteristics are deteriorated, and the resistance value and the so-called thermistor constant fluctuate from desired values. As a result, the characteristics required as the thermistor cannot be secured, and the yield is poor. Was.
本発明は斯かる問題点を解決すべくなされたものであ
り、一体焼成しても必要な特性を確保し得、また歩留り
の向上を図れるサーミスタを提供することを目的とす
る。The present invention has been made in order to solve such a problem, and an object of the present invention is to provide a thermistor which can secure necessary characteristics even when integrally fired and can improve the yield.
問題点を解決するための手段 本発明に係るサーミスタは、半導体セラミックからな
るサーミスタ素子の周囲にこれとの間で相互拡散を生じ
るセラミックからなる保護層を一体焼成したサーミスタ
において、前記サーミスタ素子と保護層との間に前記相
互拡散を防止する拡散防止層を形成すると共に、サーミ
スタ素子内に内部電極を設けた構成とする。Means for Solving the Problems The thermistor according to the present invention is a thermistor obtained by integrally firing a protective layer made of a ceramic which causes mutual diffusion between the thermistor element made of a semiconductor ceramic and the above-mentioned element. A diffusion preventing layer for preventing the interdiffusion is formed between the layers, and an internal electrode is provided in the thermistor element.
発明の作用 本発明にあっては、一体焼成を行なう際に拡散防止層
は、サーミスタ素子と保護層との間の相互拡散（以下単
に拡散という）を防止し、また仮にサーミスタ素子と保
護層との間で拡散が起こっても、焼成後において内部電
極は保護層から遠く離れていて拡散の起こっていないサ
ーミスタ素子部分或いは保護層に近いが、拡散が余り起
こっていないサーミスタ素子部分に位置することにな
る。Effect of the Invention In the present invention, the diffusion preventing layer prevents mutual diffusion (hereinafter simply referred to as “diffusion”) between the thermistor element and the protective layer when performing the integral baking, and temporarily prevents the thermistor element and the protective layer from being interposed. Even if diffusion occurs between the electrodes, after firing, the internal electrode is located far away from the protective layer and located in the thermistor element portion where diffusion does not occur or close to the protective layer but where the diffusion does not occur much. become.
実 施 例 以下本発明を図面に基づき具体的に説明する。第１図
は本発明に係るサーミスタの縦断面図であり、図中１は
一端側を夫々上下に対向させたPt製の一対の内部電極2,
2を内設するサーミスタ素子を示す。サーミスタ素子１
はMg酸化物、Co酸化物、Ni酸化物、Al酸化物等の金属酸
化物からなる半導体セラミックであり、その上面、下面
には夫々Al2O3＋ZrO2からなる拡散防止層5,5が形成さ
れ、更に外側にはAl2O3からなる絶縁性の保護層3,3が形
成されている。前記拡散防止層５は製造過程におけるサ
ーミスタ素子１と保護層３との間の拡散を防止するため
のものである。EXAMPLES Hereinafter, the present invention will be specifically described with reference to the drawings. FIG. 1 is a longitudinal sectional view of a thermistor according to the present invention. In FIG. 1, reference numeral 1 denotes a pair of Pt internal electrodes 2, one ends of which are vertically opposed to each other.
2 shows a thermistor element provided inside. Thermistor element 1
Is a semiconductor ceramic made of a metal oxide such as Mg oxide, Co oxide, Ni oxide, and Al oxide. Diffusion prevention layers 5, 5 made of Al 2 O 3 + ZrO 2 are provided on the upper and lower surfaces, respectively. The insulating protective layers 3 and 3 made of Al 2 O 3 are further formed on the outside. The diffusion preventing layer 5 is for preventing diffusion between the thermistor element 1 and the protective layer 3 in the manufacturing process.
斯るサーミスタの外観としては直方体形状を呈してお
り、上側の内部電極２の他端が位置する側面3cと上面3a
の側面3c側とには内部電極２の他端と接触し、かつその
幅でPt製の外部電極４が、また下側の内部電極２の他端
が位置する側面3dと下面3bの側面3d側とには同様にして
外部電極４が夫々別体に形成されている。The appearance of such a thermistor has a rectangular parallelepiped shape, and the side surface 3c and the upper surface 3a where the other end of the upper internal electrode 2 is located.
The side surface 3c is in contact with the other end of the internal electrode 2 and has an external electrode 4 made of Pt with its width, and the side surface 3d where the other end of the lower internal electrode 2 is located and the side surface 3d of the lower surface 3b. Similarly, external electrodes 4 are separately formed on the sides.
次に本発明品の製造方法について説明する。まず、サ
ーミスタ素子１の原料としてのMg酸化物、Co酸化物、Ni
酸化物、Al酸化物等の金属酸化物を夫々所定量づつ計量
してこれらを湿式混合したのち乾燥させ、乾燥後1200℃
の温度で１時間仮焼する。その後、湿式粉砕して乾燥さ
せ、乾燥後適当なバインダを添加して混合し、この混合
したものをドクターブレード法により厚み100μｍのシ
ートに形成して乾燥する。乾燥後、シートから例えば47
×23mmのサーミスタ素子板11を３枚カットする。Next, a method for producing the product of the present invention will be described. First, Mg oxide, Co oxide, Ni as the raw material of thermistor element 1
Oxides, Al oxides and other metal oxides are each weighed in a predetermined amount, wet-mixed, dried, and dried at 1200 ° C.
And calcined for 1 hour. Thereafter, the mixture is wet-pulverized and dried, and after drying, an appropriate binder is added and mixed. The mixture is formed into a sheet having a thickness of 100 μm by a doctor blade method and dried. After drying, for example 47
Cut three 23 mm thermistor element plates 11.
また、保護層３用の原料としてのAl2O3にバインダを
添加し、その後前述のサーミスタ素子板11と同様にして
同寸法の47×23mmである絶縁性の保護板13を６枚作成す
る。Further, a binder is added to Al 2 O 3 as a raw material for the protective layer 3, and then six insulating protective plates 13 of 47 × 23 mm having the same dimensions are formed in the same manner as the thermistor element plate 11 described above. .
更に、拡散防止層５用の原料としてのAl2O3とZrO2と
を1:1の比率に配合調整してこれにバインダを添加し、
その後、前述のサーミスタ素子板11と同様にして同寸法
の47×23mmである拡散防止板15を２枚作成する。Further, Al 2 O 3 and ZrO 2 as raw materials for the diffusion preventing layer 5 were mixed and adjusted at a ratio of 1: 1 and a binder was added thereto.
Thereafter, in the same manner as the thermistor element plate 11 described above, two 47 × 23 mm diffusion prevention plates 15 having the same dimensions are formed.
次いで、１枚のサーミスタ素子板11の上面に第２図に
示すパターンとなるように内部電極２用のPtペースト12
aを印刷し、その下面に上記パターンと対称な第３図に
示すパターンとなるように電極２用のPtペースト12bを
印刷する。即ち、印刷後、サーミスタ素子板11を上から
透視した状態において、第４図に示すように上面側のPt
ペースト12aのパターン（右上りのハッチング）と下面
側のPtペースト12bのパターン（右下りのハッチング）
が逆になるように印刷する。Next, the Pt paste 12 for the internal electrode 2 is formed on the upper surface of one thermistor element plate 11 so that the pattern shown in FIG.
a is printed, and a Pt paste 12b for the electrode 2 is printed on the lower surface so that the pattern shown in FIG. That is, after printing, in a state where the thermistor element plate 11 is seen through from above, as shown in FIG.
Paste 12a pattern (hatched on the upper right) and Pt paste 12b pattern on the lower side (hatched on the right)
Print so that is reversed.
また、２枚の保護板13,13の片面に、夫々第２図のパ
ターンと第３図のパターンに外部電極４用のPtペースト
14a,14bを印刷する。In addition, a Pt paste for the external electrode 4 is applied on one surface of each of the two protective plates 13 and 13 by applying the pattern of FIG. 2 and the pattern of FIG.
Print 14a and 14b.
その後、第５図に示す如く両面に内部電極12a,12bが
印刷されたサーミスタ素子板11を中間に位置させ、その
上下に印刷していないサーミスタ素子板11と拡散防止板
15とを夫々１枚づつ、サーミスタ素子板11を内側に位置
せしめて置き、その外側に保護板13を２枚づつ配し、更
にその外側に印刷面を外側として印刷された保護板13
を、その印刷パターンがサーミスタ素子板11のそれと対
向するように重ね、これを60℃の温度で15tonの荷重に
より60秒押圧して圧着する。Thereafter, as shown in FIG. 5, the thermistor element plate 11 on which the internal electrodes 12a and 12b are printed on both sides is positioned in the middle, and the thermistor element plate 11 which is not printed above and below the thermistor element plate 11 and the diffusion prevention plate
15 are placed one by one, the thermistor element plate 11 is placed on the inner side, two protective plates 13 are arranged on the outside, and the protective plate 13 printed on the outside with the printing surface on the outside.
Are overlapped so that the printed pattern faces that of the thermistor element plate 11, and are pressed and pressed at a temperature of 60 ° C. with a load of 15 tons for 60 seconds.
圧着されたものについては、内側の３枚のサーミスタ
素子板11がサーミスタ素子１となり、その両側の１枚の
拡散防止板15が拡散防止層５となり、更に外側の３枚の
保護板13が保護層３となる。For the crimped one, the inner three thermistor element plates 11 become the thermistor element 1, the one diffusion prevention plate 15 on both sides becomes the diffusion prevention layer 5, and the three outer protection plates 13 protect. It becomes layer 3.
そして、圧着したものを第６図（平面図）に示すよう
にカーボンペーストを用いてカットパターン15を印刷し
てそのカットパターン15に沿ってカットし、その後、15
50℃の温度で２時間焼成する。焼成後、内部電極２を外
側へ確実に露出させるべく第７図に示すように内部電極
２が形成せしめてある両端部をカットする。これは、例
えば熱膨張率の違いにより焼成後の側面において、内部
電極２部分が他の部分よりも凹状となった場合等に、こ
のままでは外部電極４と内部電極２との接触を行えなく
なるのを防止するためである。Then, as shown in FIG. 6 (plan view), the cut pattern 15 is printed using a carbon paste, and cut along the cut pattern 15.
Bake at 50 ° C for 2 hours. After firing, both ends where the internal electrodes 2 are formed are cut as shown in FIG. 7 in order to surely expose the internal electrodes 2 to the outside. This is because, for example, when the internal electrode 2 portion is more concave than the other portion on the side surface after firing due to a difference in the coefficient of thermal expansion, the external electrode 4 and the internal electrode 2 cannot be contacted as they are. This is to prevent
然る後、露出用カット面にPtペーストを塗布したのち
1200℃の温度に１時間加熱し、露出用カット面に塗布し
たPtペーストと前記Ptペースト14a,14bとからなる外部
電極４と内部電極２とを接続する。なお、外部電極４は
焼成前に内部電極２と接触するように予め設けておいて
もよい。また、その形状は第１図に示す側面3c,3dとそ
の近傍の上、下面3a,3b部分を被うように形成する。After that, apply Pt paste to the exposed cut surface,
Heating to a temperature of 1200 ° C. for one hour, the external electrode 4 composed of the Pt paste applied to the cut surface for exposure and the Pt pastes 14a and 14b and the internal electrode 2 are connected. The external electrodes 4 may be provided in advance so as to be in contact with the internal electrodes 2 before firing. Further, the shape is formed so as to cover the side surfaces 3c and 3d shown in FIG. 1 and the upper and lower surfaces 3a and 3b in the vicinity thereof.
上述のように本発明品は一体焼成されるので、焼成の
際に拡散防止層５がサーミスタ素子１と保護層３との間
の拡散を防止でき、仮に保護層３とサーミスタ素子１と
の間で拡散が生じても、内部電極２は拡散が生じていな
い部分或いはその程度が少ない部分に位置することとな
る。このため内部電極2,2間のサーミスタ素子１部分に
おいては組成変化がないか或いは有っても少ない。As described above, since the product of the present invention is integrally fired, the diffusion preventing layer 5 can prevent diffusion between the thermistor element 1 and the protective layer 3 during firing, and temporarily prevents the diffusion between the protective layer 3 and the thermistor element 1. Therefore, even if diffusion occurs, the internal electrode 2 is located in a portion where diffusion does not occur or a portion where the diffusion is small. Therefore, in the thermistor element 1 between the internal electrodes 2 and 2, there is no change or little change in the composition.
従って、エージング特性が良好になると共に抵抗値、
サーミスタ定数のバラツキが極めて小さくなり、この結
果必要な特性を確保した品質安定度の高いサーミスタが
得られると共に、各サーミスタ間の特性も一定してお
り、歩留りも大幅に向上させることができる。サーミス
タ素子が保護層及び拡散防止層にて被われているので、
サーミスタの機械的な強度の増大を図れ、耐久性を高く
できる。Therefore, the aging characteristics are improved and the resistance value,
The variation in the thermistor constant becomes extremely small. As a result, a thermistor with high quality stability, which secures necessary characteristics, can be obtained, and the characteristics between the thermistors are constant, so that the yield can be greatly improved. Since the thermistor element is covered with a protective layer and a diffusion prevention layer,
The mechanical strength of the thermistor can be increased, and the durability can be increased.
尚、上記実施例では拡散防止層の原料としてAl2O3−Z
rO2系のものを用いたが、本発明はこれに限らず、保護
層組成物とサーミスタ素子組成物との拡散を防止できる
ものを適宜用いてもよい。In the above embodiment, Al 2 O 3 −Z
Although an rO 2 -based material was used, the present invention is not limited to this, and a material that can prevent diffusion of the protective layer composition and the thermistor element composition may be used as appropriate.
また、上記実施例ではサーミスタ素子板11を３枚、保
護板13を６枚重ねた構成としているが、本発明はこれに
限らず、焼成後に内部電極がサーミスタ素子の内部に位
置する構成であればよく、サーミスタ素子板及び保護板
の使用枚数は上記以外であっても差し支えない。Further, in the above embodiment, three thermistor element plates 11 and six protective plates 13 are stacked, but the present invention is not limited to this, and the internal electrode may be located inside the thermistor element after firing. The number of the thermistor element plates and the protective plates used may be other than those described above.
そして、また、上記実施例ではサーミスタ素子内に一
対の内部電極を設けた構成としているが、本発明はこれ
に限らず、サーミスタ素子内に３つの内部電極を設けて
これを交互に左右いずれかの外部電極に接続した実質的
に２対の内部電極を有するものにも適用でき、更には実
質的に３対以上の内部電極を有するもの、即ち４以上の
内部電極を有するもの等にも適用できることは勿論であ
る。In the above embodiment, a pair of internal electrodes are provided in the thermistor element. However, the present invention is not limited to this, and three internal electrodes are provided in the thermistor element and alternately left or right. The present invention can also be applied to those having substantially two pairs of internal electrodes connected to the external electrodes, and further to those having substantially three or more pairs of internal electrodes, that is, those having four or more internal electrodes. Of course, you can.
更に、上記実施例では外部電極４を用いてこれと内部
電極２とを接続しているが、本発明はこれに限らず第８
図に示す如く周囲が拡散防止層５にて囲まれたサーミス
タ素子１内に設けた内部電極２にPt線等の導電引出し線
2aを接続した構成、つまり外部電極を形成しない構成と
してもよい。また、本発明は導電引出し線を用いたもの
に限らず、他の形状、構造により内部電極を外部と導電
する構成としてもよいことは勿論である。Further, in the above-described embodiment, the external electrode 4 is used to connect the internal electrode 2 to the internal electrode 2.
As shown in the figure, a conductive lead wire such as a Pt wire is connected to an internal electrode 2 provided in the thermistor element 1 surrounded by a diffusion preventing layer 5.
A configuration in which 2a is connected, that is, a configuration in which no external electrode is formed may be adopted. In addition, the present invention is not limited to the configuration using the conductive lead wire, and it is a matter of course that the internal electrode may be configured to be conductive to the outside by another shape and structure.
そして、更に、上記実施例では保護層が絶縁性のセラ
ミックであるが、本発明はこれに限らず保護層が導電性
のもの或いは他の特性を有するものであっても同様に適
用できる。Further, in the above embodiment, the protective layer is made of insulating ceramic. However, the present invention is not limited to this, and the present invention can be similarly applied to a case where the protective layer is conductive or has another characteristic.
発明の効果 上記詳述した如く本発明はサーミスタ素子１と保護層
３との間に拡散防止層を設けているので拡散防止層がサ
ーミスタ素子１と保護層３との間の拡散を防止でき、仮
にこの拡散を防止できなかったとしても内部電極がサー
ミスタ素子の内部に形成されているので、内部電極が拡
散の生じていない部分或いはその程度が少ない部分に位
置することにより、内部電極で挟まれたサーミスタ素子
部分では組成変化がないか或いは有っても少なく、この
ため一体焼成してもエージング特性の改善及び抵抗値、
サーミスタ定数のバラツキ低減化を図れ、この結果必要
な特性を確保した品質安定度の高いサーミスタを供給で
き、また歩留りの向上を図れる等優れた効果を奏する。Effect of the Invention As described in detail above, the present invention provides a diffusion preventing layer between the thermistor element 1 and the protective layer 3, so that the diffusion preventing layer can prevent diffusion between the thermistor element 1 and the protective layer 3, Even if this diffusion cannot be prevented, the internal electrode is formed inside the thermistor element, so that the internal electrode is located in a portion where diffusion does not occur or a portion where the diffusion is small, so that the internal electrode is sandwiched between the internal electrodes. In the thermistor element portion, there is no or little change in the composition, and therefore, even if it is integrally fired, the aging characteristics are improved and the resistance value is improved.
The variation in the thermistor constant can be reduced, and as a result, a thermistor with high quality stability, which secures necessary characteristics, can be supplied, and excellent effects such as improvement in yield can be achieved.
第１図は、本発明品の縦断面図、第２図、第３図はサー
ミスタ素子板の上面、下面に夫々印刷する電極パター
ン、第４図はそのサーミスタ素子板に印刷した上面側電
極パターンと下面側電極パターンとを上方より見た図、
第５図はサーミスタ素子板，拡散防止板及び保護板の積
層状態を示す縦断面図、第６図はカットパターンを示す
平面図、第７図は焼成後のカット位置を示す平面図、第
８図は本発明の他の実施例を示す縦断面図、第９図は従
来品の縦断面図である。 １……サーミスタ素子、２……内部電極、 ３……保護層、５……拡散防止層。FIG. 1 is a longitudinal sectional view of the product of the present invention, FIGS. 2 and 3 are electrode patterns printed on the upper and lower surfaces of a thermistor element plate, respectively, and FIG. 4 is an upper surface electrode pattern printed on the thermistor element plate. And FIG.
FIG. 5 is a longitudinal sectional view showing a laminated state of a thermistor element plate, a diffusion preventing plate and a protective plate, FIG. 6 is a plan view showing a cut pattern, FIG. 7 is a plan view showing a cut position after firing, and FIG. FIG. 9 is a longitudinal sectional view showing another embodiment of the present invention, and FIG. 9 is a longitudinal sectional view of a conventional product. 1 ... thermistor element, 2 ... internal electrode, 3 ... protective layer, 5 ... diffusion prevention layer.
Claims (1)
の周囲にこれとの間で相互拡散を生じるセラミックから
なる保護層を一体焼成したサーミスタにおいて、 前記サーミスタ素子と保護層との間に前記相互拡散を防
止する拡散防止層を形成すると共に、サーミスタ素子内
に内部電極を設けていることを特徴とするサーミスタ。1. A thermistor in which a ceramic protective layer made of ceramic which causes mutual diffusion between the thermistor element and a protective layer made of ceramic is integrally formed around the thermistor element made of a semiconductor ceramic, wherein the mutual diffusion is prevented between the thermistor element and the protective layer. A thermistor comprising: a diffusion preventing layer; and an internal electrode provided in the thermistor element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62259309A JP2580628B2 (en) | 1987-10-14 | 1987-10-14 | Thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62259309A JP2580628B2 (en) | 1987-10-14 | 1987-10-14 | Thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01101602A JPH01101602A (en) | 1989-04-19 |
| JP2580628B2 true JP2580628B2 (en) | 1997-02-12 |
Family
ID=17332286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62259309A Expired - Lifetime JP2580628B2 (en) | 1987-10-14 | 1987-10-14 | Thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2580628B2 (en) |
-
1987
- 1987-10-14 JP JP62259309A patent/JP2580628B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01101602A (en) | 1989-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |