JP2582464B2 - Soot deposition method - Google Patents
Soot deposition methodInfo
- Publication number
- JP2582464B2 JP2582464B2 JP2177334A JP17733490A JP2582464B2 JP 2582464 B2 JP2582464 B2 JP 2582464B2 JP 2177334 A JP2177334 A JP 2177334A JP 17733490 A JP17733490 A JP 17733490A JP 2582464 B2 JP2582464 B2 JP 2582464B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- soot
- deposited
- plate member
- deposition method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Glass Melting And Manufacturing (AREA)
- Element Separation (AREA)
Description
【発明の詳細な説明】 ＜産業上の利用分野＞ 本発明は例えば光導波路作製，半導体基板の接合等に
適用するスート堆積方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a soot deposition method applied to, for example, fabrication of optical waveguides, bonding of semiconductor substrates, and the like.
＜従来の技術＞ 第２図（ａ）〜（ｄ）に、従来のスート堆積方法の一
例を示す。同図に示すように、スート（ガラス微粒子）
を堆積しようとする被堆積基板11を加熱テーブル12上に
載置し、そのままバーナ13から火炎加水分解反応（ガラ
ス微粒子用原料と酸水素炎との反応）により生じたガラ
ス微粒子を、回転する加熱テーブル12に向けて吹き付け
ながら、バーナ13を走査していた。<Prior Art> FIGS. 2A to 2D show an example of a conventional soot deposition method. As shown in the figure, soot (glass fine particles)
The substrate to be deposited 11 is placed on a heating table 12, and the glass fine particles generated by the flame hydrolysis reaction (reaction between the raw material for glass fine particles and the oxyhydrogen flame) from the burner 13 are rotated by heating. The burner 13 was scanned while spraying toward the table 12.
スート14の堆積が終了し、加熱テーブル12が冷却する
までに待った後、該加熱テーブル12上の基板11を取り外
し、該基板11以外の部分に付着したスート14を、特別に
作製したこさぎ落とし治具15でこさぎ落とし、スート除
去部分16を形成、再使用していた。After the deposition of the soot 14 is completed and the heating table 12 waits until it cools, the substrate 11 on the heating table 12 is removed, and the soot 14 attached to a portion other than the substrate 11 is removed by a specially-prepared dropper. The soot was removed with a jig 15 to form a soot removal portion 16 and reused.
＜発明が解決しようとする課題＞ しかしながら前述した従来のスート堆積方法では、多
数枚の仮堆積基板11の上にスート14を堆積させる場合、
堆積よりも、被堆積基板11以外に付着したスート14を除
去するために、相当の時間を費やしてしまうという問題
がある。<Problems to be solved by the invention> However, in the above-described conventional soot deposition method, when soot 14 is deposited on a large number of temporary deposition substrates 11,
There is a problem that a considerable amount of time is spent for removing the soot 14 attached to a portion other than the substrate 11 rather than the deposition.
また、半導体基板の接合（特願昭60−82609号（特開
昭61−242033号公報）参照）を目的としたスート堆積に
おいては、重大な汚染の問題を引き起こすことになり、
高品質でしかも生産性のある光導波路、半導体接合を形
成することは実現できなかった。Further, in soot deposition for the purpose of bonding semiconductor substrates (see Japanese Patent Application No. 60-82609 (Japanese Patent Application Laid-Open No. 61-242033)), serious contamination problems are caused.
It has not been possible to form a high-quality and productive optical waveguide or semiconductor junction.
本発明は以上述べた事情に鑑み、例えば光導波路作製
や半導体基板の接合におけるスートを堆積させる場合、
不要スートが付着せず且つ生産性を高め高品質なスート
堆積方法を提供することを目的とする。The present invention in view of the circumstances described above, for example, when depositing soot in the production of optical waveguides and bonding of semiconductor substrates,
An object of the present invention is to provide a high-quality soot deposition method in which unnecessary soot is not attached and productivity is enhanced.
＜課題を解決するための手段＞ 前記目的を達成するための本発明に係るスート堆積方
法は、ガラス微粒子用原料を酸素炎で燃焼させつつ被堆
積基板の表面に吹き付けて火炎加水分解し、該被堆積基
板の表面にガラス微粒子を堆積するスート堆積方法にお
いて、上記被堆積基板の外径よりも大きく且つ耐熱性を
有する板部材を、該被堆積基板の下部に設けつつ火炎加
水分解すると共に、該板部材の中央に上記被堆積基板を
昇降自在に保持する治具を設けて上記被堆積基板を支持
し、スート堆積後に上記被堆積基板を持ち上げてなるこ
とを特徴とする。<Solution to Solve the Problem> The soot deposition method according to the present invention for achieving the above object is characterized in that the raw material for glass fine particles is burned with an oxygen flame, sprayed onto the surface of the substrate to be deposited, and subjected to flame hydrolysis. In the soot deposition method of depositing glass fine particles on the surface of a substrate to be deposited, a plate member having a larger heat resistance than the outer diameter of the substrate to be deposited is flame-hydrolyzed while being provided below the substrate to be deposited, A jig is provided at the center of the plate member to hold the substrate to be lifted up and down to support the substrate, and the substrate is lifted after soot deposition.
＜作用＞ 被堆積基板に堆積したスートとなるガラス微粒子用原
料を、酸水素炎で火炎加水分解して被堆積基板の表面に
堆積せしめるに際し、被堆積基板とそれを載置する加熱
テーブルとの間に容易に取り外しの可能で且つ耐熱性を
有する板部材を狭むことにより、被堆積基板以外に付着
する微粒子を該板部材の表面に堆積させ、スート堆積終
了後には、該板部材のみを交換することにより、連続し
てスート堆積ができる。スートが堆積された板部材は例
えば水等により洗浄して、再び使用することが可能とな
る。<Function> When the raw material for glass fine particles to be soot deposited on the substrate to be deposited is flame-hydrolyzed with an oxyhydrogen flame and deposited on the surface of the substrate to be deposited, the substrate and the heating table on which the substrate is placed are placed. By narrowing the plate member which can be easily removed in between and has heat resistance, fine particles adhering to other than the substrate to be deposited are deposited on the surface of the plate member. By replacing, soot deposition can be performed continuously. The plate member on which the soot is deposited can be washed with, for example, water or the like, and used again.
＜実 施 例＞ 以下、本発明の方法を実施する好適な一実施例を図面
を参照して説明する。<Embodiment> A preferred embodiment for carrying out the method of the present invention will be described below with reference to the drawings.
第１図（ａ）〜（ｆ）は本実施例に係るスート堆積法
の作業順序図である。尚、前述した第２図の従来技術と
同部材については、同符号を付してその説明を省略す
る。FIGS. 1A to 1F are operation sequence diagrams of the soot deposition method according to the present embodiment. The same members as those in the prior art of FIG. 2 described above are denoted by the same reference numerals, and description thereof will be omitted.
同図に示すように、本実施例においては、被堆積基板
11と加熱テーブル12との間に、SiC製の板部材20を設け
ている。該板部材20の大きさは、バーナ13の走査範囲と
同じかそれ以上にしている。特に、本実施例の場合、被
堆積基板11のみを加熱テーブル12に載置あるいは取り除
く際に該被堆積基板11を上下させるための治具としての
吸着パット21が該加熱テーブル12内に設けられている。
そしてこの吸着パット21が昇降自在となるように、該板
部材20には、被堆積基板11の大きさより若干小さい開口
部22を設けており、その形状をリング状としている。
尚、加熱テーブル12の側面、上部は排気されるようにな
っている。As shown in FIG.
A plate member 20 made of SiC is provided between 11 and the heating table 12. The size of the plate member 20 is equal to or larger than the scanning range of the burner 13. In particular, in the case of the present embodiment, a suction pad 21 is provided in the heating table 12 as a jig for moving the deposition substrate 11 up and down when only the deposition substrate 11 is placed on or removed from the heating table 12. ing.
The plate member 20 is provided with an opening 22 that is slightly smaller than the size of the substrate 11 so that the suction pad 21 can move up and down, and has a ring shape.
Note that the side and upper portions of the heating table 12 are evacuated.
本実施例では上記ガラス微粒子用の原料として、四塩
化珪素（SiCl4）を用いてスート堆積を行っているが、
四塩化珪素以外では、四塩化ゲルマニウム（GeCl4），
三塩化ほう素（BCl3），三塩化リン（PCl3）,POCl3等を
挙げることができ、これら単独又は複合して、ガラス微
粒子用の原料として用いている。In this embodiment, soot deposition is performed using silicon tetrachloride (SiCl 4 ) as a raw material for the glass fine particles.
Other than silicon tetrachloride, germanium tetrachloride (GeCl 4 ),
Examples thereof include boron trichloride (BCl 3 ), phosphorus trichloride (PCl 3 ), and POCl 3 , which are used alone or in combination as a raw material for glass fine particles.
次にスートを堆積する方法を説明する。 Next, a method of depositing soot will be described.
先ず加熱した加熱テーブル12の上に、開口部22を有
するSiC製の板部材20を該開口部22に吸着パットを嵌合
させつつ載置し、その上に被堆積基板11を載せる。本実
施例ではその被堆積基板11の載置はSiC板の開口部22を
上下できるようにしてある吸着パット21により行う。First, a SiC plate member 20 having an opening 22 is placed on the heated heating table 12 while fitting a suction pad to the opening 22, and the substrate 11 is placed thereon. In this embodiment, the deposition substrate 11 is placed by the suction pad 21 which can move up and down the opening 22 of the SiC plate.
次に、バーナ13を用い、ガラス微粒子を吹き付けな
がら、加熱テーブル12上を走査させる。スート14は被堆
積基板11だけでなく、SiC製板部材20の表面にも堆積さ
れる。Next, the heating table 12 is scanned using the burner 13 while spraying glass particles. The soot 14 is deposited not only on the substrate 11 but also on the surface of the SiC plate member 20.
堆積が終わると、吸着パット21のみが上昇し、被堆
積基板11を持ち上げた後、該スートが堆積された被堆積
基板11は別な工程へ移動される。またSiC製板部材20は
被堆積部（基板の真下にある部分）を真空吸着すること
により取り除かれる。次に、別な被堆積基板11に堆積す
るときは、加熱テーブル12の上に、新しい板部材20か、
あるいは前回使用したSiC板部材20に付着したスートを
除去したものを載置し、その上に同様に別な被堆積基板
11を載置させることにより、すぐさま、堆積を連続して
行うことができる。When the deposition is completed, only the suction pad 21 is raised, and after the substrate 11 is lifted, the substrate 11 on which the soot is deposited is moved to another process. The SiC plate member 20 is removed by vacuum-sucking the portion to be deposited (the portion immediately below the substrate). Next, when depositing on another substrate 11 to be deposited, a new plate member 20 is placed on the heating table 12,
Alternatively, the soot removed from the previously used SiC plate member 20 is placed thereon, and another substrate to be deposited is similarly placed thereon.
By placing 11, deposition can be performed immediately and immediately.
尚、SiC製に付着板部材20したスート14は例えば、水
で容易に流し落とすことができる。また、板部材20の材
料として本実施例ではSiCを使用しているが、本発明は
これに限定されず他の耐熱性のある材料を用いても良
い。特に、半導体などの場合はSiCなどが最適である
が、これ以外としては例えば、重金属が含まない耐熱セ
ラミックを例示することができる。The soot 14 made of the attachment plate member 20 made of SiC can be easily washed off with water, for example. Further, in this embodiment, SiC is used as the material of the plate member 20, but the present invention is not limited to this, and another material having heat resistance may be used. In particular, in the case of a semiconductor or the like, SiC or the like is optimal, but other examples include a heat-resistant ceramic containing no heavy metal.
このように、堆積時、被堆積基板11と加熱テーブル12
との間に板部材20を挟み、不要スートを該板部材20の表
面に堆積させているので、従来のように加熱テーブル12
に不要スート14が付着することがなく、さらに被堆積基
板11の着脱が容易にできるなどと、生産性の高い、スー
ト堆積が実現できる。Thus, at the time of deposition, the substrate 11 to be deposited and the heating table 12
The unnecessary soot is deposited on the surface of the plate member 20 between the plate member 20 and the heating table 12 as in the related art.
Unnecessary soot 14 does not adhere to the substrate, and the deposition substrate 11 can be easily attached and detached. Thus, soot deposition with high productivity can be realized.
＜発明の効果＞ 以上実施例と共に説明したように、本発明によれば、
光導波路作製、半導体基板の接合におけるスート堆積に
おいて、被堆積基板とそれを載置するテーブルの間に容
易に取り外しのできる板部材をはさみつつスート堆積を
行うことにより、被堆積基板以外に付着するスートは該
板部材に堆積されるので、光導波路作製、半導体基板の
接合における生産性を高め、高品質にすることが可能と
なるという効果を奏する。<Effects of the Invention> As described above with the embodiments, according to the present invention,
In soot deposition in the production of optical waveguides and bonding of semiconductor substrates, soot deposition is performed while sandwiching a plate member that can be easily removed between a substrate to be deposited and a table on which the substrate is placed, so that the soot deposits on other than the substrate to be deposited. Since the soot is deposited on the plate member, it is possible to enhance the productivity in the production of the optical waveguide and the bonding of the semiconductor substrate, and to achieve the high quality.
第１図は本実施例に係るスート堆積法の作業順序図、第
２図は従来に係るスート堆積法の作業順序図である。 図中面、 11は被堆積基板、12は加熱テーブル、13はバーナ、14は
スート、15はこさぎ落し治具、20はSiC製板部材、21は
吸着パット、22は開口部である。FIG. 1 is a work sequence diagram of a soot deposition method according to the present embodiment, and FIG. 2 is a work sequence diagram of a conventional soot deposition method. In the figure, 11 is a substrate to be deposited, 12 is a heating table, 13 is a burner, 14 is a soot, 15 is a scissor jig, 20 is a SiC plate member, 21 is a suction pad, and 22 is an opening.
Claims (1)
つ被堆積基板の表面に吹き付けて火炎加水分解し、該被
堆積基板の表面にガラス微粒子を堆積するスート堆積方
法において、 上記被堆積基板の外径よりも大きく且つ耐熱性を有する
板部材を、該被堆積基板の下部に設けつつ火炎加水分解
すると共に、該板部材の中央に上記被堆積基板を昇降自
在に保持する治具を設けて上記被堆積基板を支持し、シ
ート堆積後に上記被堆積基板を持ち上げてなることを特
徴とするスート堆積方法。1. A soot deposition method in which a raw material for glass particles is sprayed onto a surface of a substrate to be subjected to flame hydrolysis while being burned by an oxygen flame, and glass particles are deposited on the surface of the substrate. A jig for flame hydrolysis while providing a plate member having a heat resistance larger than the outer diameter of the substrate below the substrate to be deposited, and a jig for holding the substrate to be deposited up and down freely in the center of the plate member is provided. A soot deposition method, comprising supporting the substrate to be deposited by the above method and lifting the substrate after depositing the sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2177334A JP2582464B2 (en) | 1990-07-06 | 1990-07-06 | Soot deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2177334A JP2582464B2 (en) | 1990-07-06 | 1990-07-06 | Soot deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0465857A JPH0465857A (en) | 1992-03-02 |
| JP2582464B2 true JP2582464B2 (en) | 1997-02-19 |
Family
ID=16029159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2177334A Expired - Fee Related JP2582464B2 (en) | 1990-07-06 | 1990-07-06 | Soot deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2582464B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2823115B2 (en) * | 1995-03-23 | 1998-11-11 | 宇部興産株式会社 | Method for manufacturing composite semiconductor substrate |
| JP4915962B2 (en) * | 2008-06-25 | 2012-04-11 | パナソニック株式会社 | Micro bubble cleaning nozzle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6381828U (en) * | 1986-11-19 | 1988-05-30 | ||
| JPH01270525A (en) * | 1988-04-18 | 1989-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Production of glass film for optical circuit |
-
1990
- 1990-07-06 JP JP2177334A patent/JP2582464B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0465857A (en) | 1992-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |