JP2583567B2 - Method for manufacturing stem for semiconductor laser device - Google Patents
Method for manufacturing stem for semiconductor laser deviceInfo
- Publication number
- JP2583567B2 JP2583567B2 JP63087898A JP8789888A JP2583567B2 JP 2583567 B2 JP2583567 B2 JP 2583567B2 JP 63087898 A JP63087898 A JP 63087898A JP 8789888 A JP8789888 A JP 8789888A JP 2583567 B2 JP2583567 B2 JP 2583567B2
- Authority
- JP
- Japan
- Prior art keywords
- stem
- substrate
- semiconductor laser
- notch
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は半導体レーザ素子用ステムの製造方法に関す
る。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a stem for a semiconductor laser device.
(従来の技術) 半導体レーザ素子用ステムは精密部品として高い寸法
精度が要求されるものであり、ステム基板が放熱体部な
ど各部の寸法許容値が厳しく設定されている。(Prior Art) A stem for a semiconductor laser element is required to have high dimensional accuracy as a precision component, and the dimensional tolerance of each part such as a radiator of a stem substrate is strictly set.
また、この半導体レーザ素子用ステムでは放熱体上に
半導体レーザ素子が正確に接合されるよう、また、各種
電子機器に実装する際に正確に位置決めできるようにス
テムの基板外周面の所定位置に位置決め用の切欠が設け
られている。In addition, the stem for the semiconductor laser element is positioned at a predetermined position on the outer peripheral surface of the substrate of the stem so that the semiconductor laser element is accurately bonded on the radiator and can be accurately positioned when mounted on various electronic devices. Notch is provided.
(発明が解決しようとする課題) 上述したように、半導体レーザ素子用ステムには高い
寸法精度が要求されるため、ステム基板の外径を高精度
で加工するためには、まず外径を予備的に粗抜きし、次
にシェービング加工によってさらに仕上げ加工して基板
の外径を決めるようにしている。(Problems to be Solved by the Invention) As described above, a high dimensional accuracy is required for the stem for a semiconductor laser element. The substrate is roughly punched and then subjected to a finishing process by shaving to determine the outer diameter of the substrate.
しかしながら、位置決め用の切欠はシェービング加工
のように段階を設けて加工することが極めて困難である
ため、1回のプレス打ち抜き加工によって切欠を形成し
なければならない。この結果、ステム基板の打ち抜きポ
ンチが当接する面と反対側の面で切欠部にばりが出るこ
とが避けられない。However, it is extremely difficult to form the notch for positioning with steps like shaving, so the notch must be formed by one press punching. As a result, it is unavoidable that burrs appear in the cutout on the surface of the stem substrate opposite to the surface that the punching abuts.
このばりはステムが傾いて実装されたり、正確な位置
決めを妨げる等の悪影響を及ぼすので、必ず取り除かね
ばならない。従来、ステムのばり取り作業は人手にたよ
っており、1個ずつばりを削り取って基板面が平坦面に
なるようにしている。このため、従来はばり取り作業に
多くの手間がかかり、作業能率が悪いという問題点があ
った。This burr must be removed because it has adverse effects such as mounting the stem with a slant or hindering accurate positioning. Conventionally, the deburring operation of the stem is manually performed, and the deburring is performed one by one so that the substrate surface becomes a flat surface. For this reason, conventionally, there has been a problem that the deburring work requires much labor and the working efficiency is poor.
ばり取り作業では、人手のかわりに、たとえばバレル
等を用いて行うことも考えられるが、この場合は、ばり
取りの結果本来尖鋭であったエッジ部がだれてしまい、
放熱体部のように半導体レーザ素子を固着するためエッ
ジ部の尖鋭度を必要とする部分も削られてしまう等の問
題点がある。このため、ステムのばり取りは機械的なば
り取り方法を採用することができず、もっぱら人手にた
よっているのが現状である。In the deburring work, for example, it is conceivable to use a barrel or the like instead of manual operation, but in this case, the originally sharp edge portion as a result of the deburring will be lost,
There is a problem that a portion requiring sharpness of an edge portion for fixing a semiconductor laser element such as a radiator is also cut off. For this reason, the deburring of the stem cannot be performed by a mechanical deburring method, and the present situation is that the deburring is mainly performed manually.
そこで、本発明は上記問題点を解消すべくなされたも
のであり、その目的とするところは、手作業によるばり
取り作業をなくすとともに、実装時および半導体レーザ
素子接合時等にばりによって位置決めが妨げられること
のないステムを製造することのできる半導体レーザ素子
用ステムの製造方法を提供しようとするものである。Therefore, the present invention has been made to solve the above-mentioned problems, and aims to eliminate the manual deburring work and to prevent the positioning from being performed due to the burrs at the time of mounting and at the time of bonding a semiconductor laser element. It is an object of the present invention to provide a method for manufacturing a stem for a semiconductor laser device, which can manufacture a stem that cannot be used.
(課題を解決するための手段) 本発明は上記目的を達成するため次の構成をそなえ
る。(Means for Solving the Problems) The present invention has the following configuration to achieve the above object.
すなわち、ステムの基板外周面上に位置決め用の切欠
が打ち抜き加工により形成される半導体レーザ素子用ス
テムの製造方法において、前記基板の打ち抜きポンチが
当接する面の反対側の面上に、前記形成すべき切欠の少
なくともエッジ部を跨いで、切欠を形成する際に生じる
ばりの突出量よりも深い段差を有する凹部を設けて、打
ち抜き加工を施すことを特徴とする。That is, in a method of manufacturing a stem for a semiconductor laser device in which a notch for positioning is formed by punching on an outer peripheral surface of a substrate of a stem, the notch is formed on a surface of the substrate on a side opposite to a surface to which a punch punch contacts. It is characterized in that a recess having a step that is deeper than the projection of a beam generated when forming the notch is provided over at least the edge portion of the notch, and punching is performed.
また、前記凹部を前記基板の面上で環状に設けること
を特徴とする。Further, the recess is provided in an annular shape on the surface of the substrate.
(実施例) 以下本発明の好適な実施例を添付図面に基づいて詳細
に説明する。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
第1図は、本発明の半導体レーザ素子用ステムの製造
方法によって得られた半導体レーザ素子用ステムの底面
図、第2図は正面図である。FIG. 1 is a bottom view of a stem for a semiconductor laser device obtained by the method of manufacturing a stem for a semiconductor laser device of the present invention, and FIG. 2 is a front view.
図で10はステムの基板であり、12は基板10にガラスに
より気密溶着されて立設されるリードピンである。この
実施例のステムは基板10の中心をはさんで対称位置に底
面から見てV形に切り欠かれた切欠14およびこの2つの
切欠14の方向と直交する位置に設けられるコの字形の切
欠16とを有する。In the figure, reference numeral 10 denotes a stem substrate, and reference numeral 12 denotes lead pins which are hermetically welded to the substrate 10 by glass and stand upright. The stem of this embodiment has a notch 14 cut in a V shape when viewed from the bottom at a symmetrical position with respect to the center of the substrate 10 and a U-shaped notch provided at a position orthogonal to the direction of the two notches 14. With 16.
また、20は前記切欠14、16のエッジ部に設けられる凹
部である。この凹部20は切欠14、14、16を形成する前段
階で基板10下面にプレス押圧加工等によって陥没するよ
うにあらかじめ設けられるものである。第2図は切欠1
4、14を通る線での断面図であり、基板10下面に凹部20
が設けられることを示す。Reference numeral 20 denotes a concave portion provided at the edge of the cutouts 14, 16. The recess 20 is provided in advance so as to be depressed by pressing or the like on the lower surface of the substrate 10 before forming the cutouts 14, 14, 16. Figure 2 shows notch 1
4 is a cross-sectional view taken along a line passing through 14
Is provided.
この半導体レーザ素子用ステムを製造する際は、切欠
14、14、16を形成する以前に、あらかじめ切欠14、14、
16を形成する個所に凹部20を設けておき、凹部20を形成
した後、基板10の上面側から下面に向けてプレス打ち抜
き加工により切欠14、14、16を設ける。When manufacturing the stem for this semiconductor laser device,
Before forming 14, 14, 16, pre-cut 14, 14,
The concave portion 20 is provided at the position where the substrate 16 is to be formed. After the concave portion 20 is formed, the cutouts 14, 14, 16 are provided from the upper surface side of the substrate 10 toward the lower surface by press punching.
第3図は第1図のH−H′断面を示し、プレス打ち抜
き加工で生じたばりと凹部20の関係を示す。図で22はプ
レス打ち抜き加工によって生じたばりである。FIG. 3 shows a cross section taken along the line HH 'of FIG. 1, and shows the relationship between the burrs generated by press punching and the recess 20. In the figure, reference numeral 22 denotes burrs generated by press stamping.
前記凹部20はプレス打ち抜き加工時に発生するばり22
の突出量Aよりも深い段差Bを有するようにあらかじめ
加工されているものであって、プレス打ち抜き加工によ
って生じるばり22の先端が段差を越えて基板面よりも外
側に突出しないようにするものである。The recesses 20 are burrs 22 generated during press punching.
Is formed in advance so as to have a step B that is deeper than the protrusion amount A, so that the tip of the burr 22 generated by press punching does not protrude beyond the substrate surface beyond the step. is there.
実際にプレス打ち抜き加工によって生じるばり22の突
出量は0.1mm程度であるので、凹部20の段差Bは0.2〜0.
3mm程度でよい。Since the projection amount of the burrs 22 actually generated by press punching is about 0.1 mm, the step B of the concave portion 20 is 0.2 to 0.
It may be about 3mm.
なお、第1図に示すようにこの実施例では凹部20は切
欠14、14、16のエッジ部分、V形の切欠14ではV形の先
端部に、コの字形の切欠では直角に曲がるコーナー部
(2個所)に設けられる。これはプレス加工の際、切欠
ではエッジ部分にもっとも強い剪断力がかかり、エッジ
部にばりが多く発生することによる。As shown in FIG. 1, in this embodiment, the concave portion 20 has an edge portion of the notches 14, 14, and 16, the V-shaped notch 14 has a V-shaped tip portion, and the U-shaped notch has a corner portion bent at a right angle. (Two places). This is due to the fact that the strongest shearing force is applied to the edge portion at the notch during press working, and much burrs are generated at the edge portion.
したがって、凹部20は少なくとも切欠を形成する個所
の切欠のエッジ部を跨ぐように設ける必要がある。もち
ろん、第4図に示すように切欠14、14、16を含む基板10
下面に環状に凹部20aを設けるようにしてもかまわな
い。Therefore, the concave portion 20 needs to be provided so as to straddle at least the edge portion of the cutout where the cutout is formed. Of course, the substrate 10 including the cutouts 14, 14, 16 as shown in FIG.
The lower surface may be provided with the concave portion 20a in an annular shape.
なお、凹部20は打ち抜きポンチが当接する面と反対側
の基板面上に設けるもので、形成する位置や大きさは加
工形態によって適宜選択すればよい。Note that the concave portion 20 is provided on the substrate surface opposite to the surface to which the punch punch contacts, and the position and size of the concave portion 20 may be appropriately selected depending on the processing mode.
以上、本発明について好適な実施例を挙げて種々説明
したが、本発明はこの実施例に限定されるものではな
く、発明の精神を逸脱しない範囲内で多くの改変を施し
得るのはもちろんのことである。As described above, the present invention has been described variously with reference to the preferred embodiments. However, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. That is.
(発明の効果) 本発明の製造方法によれば、上述したように、基板の
切欠を形成する部分にあらかじめ凹部を形成しておくこ
とによりばりが基板面から突出することがない。この結
果、ステムを取り付ける際に取り付け面になんら影響を
与えず、傾斜したりせずに正常な取り付けおよび位置決
めが可能となる。(Effect of the Invention) According to the manufacturing method of the present invention, as described above, the burrs do not protrude from the substrate surface by forming the concave portions in advance in the portions where the cutouts are formed in the substrate. As a result, when the stem is mounted, the mounting surface is not affected at all, and normal mounting and positioning can be performed without tilting.
また、この製造方法によれば、従来の基板外径の寸法
精度にもなんら影響を与えることがなく、また基板の他
の個所にだれ等の影響を与えることもないから高精度の
ステムを製造することができる。In addition, according to this manufacturing method, a high-precision stem can be manufactured because it has no influence on the dimensional accuracy of the conventional substrate outer diameter and no influence on other parts of the substrate. can do.
また、本発明の方法によれば人手によるばり取り作業
が不要となり、労力が削減できるとともに生産コストを
下げることができる等の著効を奏する。Further, according to the method of the present invention, there is no need for manual deburring work, which leads to significant effects such as reduction of labor and reduction of production cost.
【図面の簡単な説明】 第1図は本発明に係る製造方法で得られる半導体レーザ
素子用ステムを示す底面図、第2図は断面図、第3図は
ばりと凹部とを示すH−H′線断面図、第4図は他の半
導体レーザ素子用ステムを示す底面図である。 10……基板、12……リードピン、14、16……切欠、20…
…凹部、22……ばり。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a bottom view showing a stem for a semiconductor laser device obtained by a manufacturing method according to the present invention, FIG. 2 is a sectional view, and FIG. FIG. 4 is a bottom view showing another stem for a semiconductor laser device. 10 ... board, 12 ... lead pin, 14, 16 ... notch, 20 ...
... recess, 22 ... burrs.
Claims (2)
が打ち抜き加工により形成される半導体レーザ素子用ス
テムの製造方法において、 前記基板の打ち抜きポンチが当接する面の反対側の面上
に、前記形成すべき切欠の少なくともエッジ部を跨い
で、切欠を形成する際に生じるばりの突出量よりも深い
段差を有する凹部を設けて、打ち抜き加工を施すことを
特徴とする半導体レーザ素子用ステムの製造方法。1. A method of manufacturing a stem for a semiconductor laser device, wherein a notch for positioning is formed by punching on an outer peripheral surface of a substrate of a stem, wherein: A recess having a step deeper than an amount of projection of a burr generated at the time of forming the notch, straddling at least an edge portion of the notch to be formed, and performing punching. Production method.
ことを特徴とする請求項1記載の半導体レーザ素子用ス
テムの製造方法。2. The method according to claim 1, wherein the concave portion is provided in an annular shape on the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087898A JP2583567B2 (en) | 1988-04-08 | 1988-04-08 | Method for manufacturing stem for semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63087898A JP2583567B2 (en) | 1988-04-08 | 1988-04-08 | Method for manufacturing stem for semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01259548A JPH01259548A (en) | 1989-10-17 |
| JP2583567B2 true JP2583567B2 (en) | 1997-02-19 |
Family
ID=13927713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63087898A Expired - Fee Related JP2583567B2 (en) | 1988-04-08 | 1988-04-08 | Method for manufacturing stem for semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2583567B2 (en) |
-
1988
- 1988-04-08 JP JP63087898A patent/JP2583567B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01259548A (en) | 1989-10-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |