JP2584086B2 - Resin-sealed semiconductor package - Google Patents
Resin-sealed semiconductor packageInfo
- Publication number
- JP2584086B2 JP2584086B2 JP2007473A JP747390A JP2584086B2 JP 2584086 B2 JP2584086 B2 JP 2584086B2 JP 2007473 A JP2007473 A JP 2007473A JP 747390 A JP747390 A JP 747390A JP 2584086 B2 JP2584086 B2 JP 2584086B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- heat sink
- semiconductor package
- thickness
- exposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は樹脂封止型半導体パッケージに関する。Description: TECHNICAL FIELD The present invention relates to a resin-sealed semiconductor package.
従来の技術 従来この種の半導体パッケージは第３図および第４図
に示すような構成であった。2. Description of the Related Art Conventionally, this type of semiconductor package has a configuration as shown in FIGS.
第３図は放熱板を上側に、第４図は放熱板を下側に基
板に実装した場合を示し、片面に放熱板１が露出し、リ
ード上面側およびリード下面側ともそれぞれ同一の厚さ
ｄを有する樹脂部でパッケージされ、基板面４に実装さ
れている。FIG. 3 shows a case in which the heat sink is mounted on the board on the upper side, and FIG. 4 shows a case in which the heat sink is mounted on the board on the lower side. It is packaged with a resin part having d and is mounted on the substrate surface 4.
同一のリード曲げ金型を使用すると、SOタイプを例に
とると、実装された半導体パッケージのリード基部５か
ら基板面４までの高さｈは、当然第３図の場合も第４図
の場合も同一であるが、基板面４から半導体パッケージ
下面までの高さ（以下スタンドオフ高さと呼ぶ）は、第
３図の場合b1、第４図の場合b2、樹脂部から露出してい
る放熱板の厚さをd3とすると、第３図からｈ＝ｄ＋b1、
第４図からｈ＝ｄ＋（b2＋d3）、したがってb1＝b2＋d3
となりスタンドオフ高さは、第４図の放熱板を下側にな
るように基板に実装した場合のb2は、第３図の放熱板を
上側になるように基板に実装した場合のb1より、樹脂部
から露出している放熱板の厚さd3に相当する寸法だけ低
くなる。Using the same lead bending mold, taking the SO type as an example, the height h from the lead base 5 to the substrate surface 4 of the mounted semiconductor package is naturally the case of FIG. 3 and the case of FIG. The height from the substrate surface 4 to the lower surface of the semiconductor package (hereinafter referred to as stand-off height) is b 1 in FIG. 3, b 2 in FIG. 4, and is exposed from the resin portion. Assuming that the thickness of the heat sink is d 3 , h = d + b 1 from FIG.
From FIG. 4, h = d + (b 2 + d 3 ), and therefore b 1 = b 2 + d 3
The stand-off height is b 2 when the heatsink shown in FIG. 4 is mounted on the board with the lower side, and b 1 when the heatsink shown in FIG. 3 is mounted on the board with the upper side up. more, by a dimension corresponding to the thickness d 3 of the heat radiating plate which is exposed from the resin portion low.
発明が解決しようとする課題 このような従来の構成では、スタンドオフ高さは通常
0.05〜0.20mm必要とされるが放熱板を下側になるように
基板に実装された場合は、スタンドオフ高さが低くなる
ため、所定のスタンドオフ高さが得られず放熱効率が低
下するという課題があった。SUMMARY OF THE INVENTION In such a conventional configuration, the standoff height is usually
Although 0.05 to 0.20 mm is required, if the heat sink is mounted on the board so that it is on the lower side, the stand-off height will be low, so that the predetermined stand-off height cannot be obtained and the heat radiation efficiency will be reduced There was a problem that.
本発明はこのような課題を解決するもので、放熱板を
下側になるように基板に実装された場合の放熱効率の低
下を防止できる樹脂封止型半導体用パッケージを提供す
ることを目的とするものである。An object of the present invention is to solve such a problem, and an object of the present invention is to provide a resin-encapsulated semiconductor package that can prevent a decrease in heat radiation efficiency when mounted on a substrate such that a heat radiating plate is on the lower side. Is what you do.
課題を解決するための手段 この課題を解決するため本発明は、樹脂部の一表面に
放熱板が露出し、前記樹脂部の側面からリードが突出し
た樹脂封止型半導体用パッケージにおいて、前記樹脂部
から突出したリードのリード基部を基点として、その基
点から前記樹脂部の放熱板が露出していない側の樹脂部
の表面までの厚さは、前記基点から前記放熱板が露出し
ている側の樹脂部の表面までの厚さに、前記放熱板の露
出している分の厚さを加えた厚さで構成したものであ
る。Means for Solving the Problems In order to solve this problem, the present invention provides a resin-sealed semiconductor package in which a heat sink is exposed on one surface of a resin portion and leads protrude from side surfaces of the resin portion. With the lead base of the lead projecting from the base as a base point, the thickness from the base point to the surface of the resin part on the side where the heat sink of the resin part is not exposed is the side where the heat sink is exposed from the base point. And a thickness obtained by adding the thickness of the exposed portion of the heat sink to the thickness up to the surface of the resin portion.
作用 この構成により、放熱板を上側になるように実装した
場合と、下側になるように実装した場合とで、スタンド
オフ高さは同一の寸法となることとなる。Operation With this configuration, the standoff height is the same in the case where the heatsink is mounted on the upper side and in the case where the heatsink is mounted on the lower side.
実施例 第１図および第２図は、本発明をSOタイプの樹脂封止
型半導体用パッケージに応用した場合の一実施例であ
る。Embodiment FIGS. 1 and 2 show an embodiment in which the present invention is applied to an SO type resin-sealed semiconductor package.
第１図は放熱板を上側になるように実装した場合を示
し、第２図は放熱板を下側になるように実装した場合を
示し、スタンドオフ高さをａ、放熱板側の樹脂部の厚さ
をd1、放熱板のない側の厚さをd2とする。FIG. 1 shows a case where the heat sink is mounted on the upper side, and FIG. 2 shows a case where the heat sink is mounted on the lower side. Is d 1 , and the thickness of the side without the heat sink is d 2 .
前記以外の各部の構成と符号は、第３図および第４図
と同一であるため説明を省略する。The configuration and reference numerals of the other parts other than those described above are the same as those in FIGS.
第１図および第２図から明らかなように、放熱板が上
側になるように実装される場合でも、下側になるように
実装される場合でもスタンドオフ高さを同一のａにする
ためには、第１図からａ＝ｈ−d2、第２図からａ＝ｈ−
（d1＋d3）、したがってd2＝d1＋d3となることから明ら
かなように放熱板のない側の樹脂部の厚さd2を、放熱板
の露出している側の樹脂部の厚さd1に樹脂部から露出し
ている放熱板の厚さd3を加えた寸法に構成すればよい。
スタンドオフ高さは、通常必要とされる0.05〜0.20mmの
間から放熱効果が大になるように選択できる。As is clear from FIG. 1 and FIG. 2, in order to make the stand-off height the same a regardless of whether the heat sink is mounted on the upper side or the lower side. Is a = h−d 2 from FIG. 1 and a = h− from FIG.
(D 1 + d 3 ), and therefore d 2 = d 1 + d 3 , so that it is clear that the thickness d 2 of the resin part on the side without the heat sink is equal to the thickness of the resin part on the exposed side of the heat sink. the radiator plate to the thickness d 1 is exposed from the resin portion a thickness d 3 may be configured to dimension added.
The standoff height can be selected from the normally required range of 0.05 to 0.20 mm so as to increase the heat dissipation effect.
この構成により、放熱板を下側になるように実装した
場合でも、所定のスタンドオフ高さが得られるため、放
熱効率の低下をきたすことはない。With this configuration, even when the heatsink is mounted on the lower side, a predetermined standoff height can be obtained, so that heat dissipation efficiency does not decrease.
発明の効果 以上のように本発明によれば片側に放熱板が露出して
いる樹脂封止型半導体パッケージ前記片側に放熱板が露
出している側の、リード基部を基点として前記放熱板上
面までの高さと、前記放熱板の露出していない側の、リ
ード基部を基点として樹脂部上面までの厚さが等しくな
るように、それぞれの側の樹脂部の厚さを選定して構成
することにより、放熱板の露出している側が下側になる
ように基板に実装された場合でも所定のスタンドオフ高
さを保持できるため、放熱効率の低下を防止できるとい
う効果が得られる。Effect of the Invention As described above, according to the present invention, the resin-encapsulated semiconductor package in which the heatsink is exposed on one side, the lead base on the side where the heatsink is exposed on the one side, and up to the upper surface of the heatsink. Height, and the thickness of the resin portion on each side is selected and configured such that the thickness up to the upper surface of the resin portion with the lead base as the base point on the side where the heat sink is not exposed is equal. In addition, since the predetermined stand-off height can be maintained even when the heat sink is mounted on the board such that the exposed side of the heat sink is on the lower side, the effect of preventing a decrease in heat radiation efficiency can be obtained.
第１図は本発明の一実施例をSOタイプの樹脂封止型半導
体パッケージの放熱板を上側になるように基板に実装し
た場合の側面図、第２図は同放熱板を下側になるように
基板に実装した場合の側面図、第３図は従来のSOタイプ
の樹脂封止型半導体パッケージの放熱板を上側になるよ
うに基板に実装した場合の側面図、第４図は同放熱板を
下側になるように基板に実装した場合の側面図である。 １……放熱板、２……スタンドオフ高さ、３……リー
ド、５……リード基部、d1,d2……樹脂部の厚さFIG. 1 is a side view of an embodiment of the present invention in which a heat sink of a SO-type resin-sealed semiconductor package is mounted on a substrate so that the heat sink is on the upper side, and FIG. FIG. 3 is a side view of a conventional SO-type resin-encapsulated semiconductor package mounted on a substrate such that the heatsink is mounted on the substrate, and FIG. 4 is a side view of the heatsink. It is a side view when mounting a board to a board so that it may become a lower side. 1 ... heat sink, 2 ... stand-off height, 3 ... lead, 5 ... lead base, d 1 , d 2 ... thickness of resin part
Claims (1)
脂部の側面からリードが突出した樹脂封止型半導体用パ
ッケージにおいて、前記樹脂部から突出したリードのリ
ード基部を基点として、その基点から前記樹脂部の放熱
板が露出していない側の樹脂部の表面までの厚さは、前
記基点から前記放熱板が露出している側の樹脂部の表面
までの厚さに、前記放熱板の露出している分の厚さを加
えた厚さであることを特徴とする樹脂封止型半導体用パ
ッケージ。In a resin-encapsulated semiconductor package in which a heat sink is exposed on one surface of a resin portion and leads protrude from a side surface of the resin portion, a lead base of the lead protruding from the resin portion is used as a base point. The thickness from the base point to the surface of the resin part on the side where the heat sink of the resin part is not exposed is the thickness from the base point to the surface of the resin part on the side where the heat sink is exposed. A resin-encapsulated semiconductor package having a thickness obtained by adding a thickness of an exposed portion of the heat sink.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007473A JP2584086B2 (en) | 1990-01-17 | 1990-01-17 | Resin-sealed semiconductor package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007473A JP2584086B2 (en) | 1990-01-17 | 1990-01-17 | Resin-sealed semiconductor package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03211861A JPH03211861A (en) | 1991-09-17 |
| JP2584086B2 true JP2584086B2 (en) | 1997-02-19 |
Family
ID=11666758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007473A Expired - Lifetime JP2584086B2 (en) | 1990-01-17 | 1990-01-17 | Resin-sealed semiconductor package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584086B2 (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63153573U (en) * | 1987-03-30 | 1988-10-07 |
-
1990
- 1990-01-17 JP JP2007473A patent/JP2584086B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03211861A (en) | 1991-09-17 |
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