JP2594465B2 - Method for producing dielectric porcelain composition - Google Patents
Method for producing dielectric porcelain compositionInfo
- Publication number
- JP2594465B2 JP2594465B2 JP63203407A JP20340788A JP2594465B2 JP 2594465 B2 JP2594465 B2 JP 2594465B2 JP 63203407 A JP63203407 A JP 63203407A JP 20340788 A JP20340788 A JP 20340788A JP 2594465 B2 JP2594465 B2 JP 2594465B2
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- Japan
- Prior art keywords
- firing
- composition
- hours
- dielectric
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000000203 mixture Substances 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052573 porcelain Inorganic materials 0.000 title description 3
- 238000010304 firing Methods 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 11
- 238000000465 moulding Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000011701 zinc Substances 0.000 description 14
- 238000010298 pulverizing process Methods 0.000 description 12
- 239000000843 powder Substances 0.000 description 7
- 230000007812 deficiency Effects 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 238000000975 co-precipitation Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000005303 weighing Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010303 mechanochemical reaction Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、Ba(Zn1/3 Ta2/3)O3系マイクロ波用誘電
体磁器組成物の製造方法に関し、更に詳しくは、バリウ
ム組成比を化学量論から僅かに不足させ、仮焼品を湿式
による粉砕を行わずに焼成する誘電体磁器組成物の製造
方法に関するものである。The present invention relates to a method for producing a Ba (Zn 1/3 Ta 2/3 ) O 3 -based dielectric ceramic composition for microwaves, and more particularly to barium. The present invention relates to a method for producing a dielectric ceramic composition in which the composition ratio is slightly insufficient based on stoichiometry, and a calcined product is fired without performing wet pulverization.
[従来の技術] マイクロ波領域で使用する誘電体磁器組成物には様々
な材料系列が開発されているが、その一つにBa(Zn1/3
Ta2/3)O3系組成物がある。この種の材料系列に限ら
ず、一般にセラミックス材料は次のような工程を経て製
造される。まず原料を所定の組成となるように秤量配合
して混合し、仮焼成を行い、ボールミル等による湿式微
粉砕を行った後、乾燥する。次いでこの乾燥粉体をバイ
ンダーと混練して造粒し、成形した後、適当な条件で焼
成を行う。[Prior Art] Various material series have been developed for dielectric ceramic compositions used in the microwave region. One of them is Ba (Zn 1/3).
Ta 2/3 ) O 3 -based compositions are available. In addition to this type of material series, ceramic materials are generally manufactured through the following steps. First, the raw materials are weighed and mixed so as to have a predetermined composition, mixed, pre-fired, wet finely pulverized by a ball mill or the like, and then dried. Next, the dried powder is kneaded with a binder, granulated, molded, and then fired under appropriate conditions.
添加物が入っていない純粋のBa(Zn1/3 Ta2/3)O3組
成物(化学量論組成)は、1600〜1700℃の高温で焼成し
ても焼結性が悪い。さらに長時間焼成した場合、異常粒
成長が起こり密度が著しく低下するため、比誘電率εr
制御が難しい。A pure Ba (Zn 1/3 Ta 2/3 ) O 3 composition (stoichiometric composition) containing no additive has poor sinterability even when fired at a high temperature of 1600 to 1700 ° C. In the case of firing for a longer time, abnormal grain growth occurs and the density is significantly reduced.
Difficult to control.
しかし1350〜1600℃の温度で数十時間ないし百数十時
間にわたって焼成することによって、12GHzにおける無
負荷Qを最大14000程度まで向上させ得ることが報告さ
れている(「エレクトロニク・セラミクス」'86 3月
号第41〜45頁:(株)学献社発行)。この場合、比誘電
率は29〜30程度であるが、共沈法で得た粉体やホットプ
レス法を用いることにより30.2程度まで向上させうるこ
とも報告されている。なお共振周波数温度特性は0±0.
5ppm/℃程度である。However, it has been reported that by firing at a temperature of 1350 to 1600 ° C. for several tens to hundreds of hours, the no-load Q at 12 GHz can be improved up to about 14000 (“Electronic Ceramics” '86) March issue, pages 41-45: Published by Gakudensha. In this case, the relative dielectric constant is about 29 to 30, but it is reported that the relative permittivity can be improved to about 30.2 by using a powder obtained by a coprecipitation method or a hot press method. The resonance frequency temperature characteristic is 0 ± 0.
It is about 5 ppm / ° C.
また比誘電率と共振周波数温度係数は、Ba(Zn1/3 Nb
2/3)O3,BaZrO3,Ba(Ni1/3 Ta2/3)O3等の添加物を厳密
に秤量して混入させることによりある程度制御可能であ
る。The relative permittivity and the temperature coefficient of the resonance frequency are Ba (Zn 1/3 Nb
2/3 ) O 3 , BaZrO 3 , Ba (Ni 1/3 Ta 2/3 ) O 3 and other additives can be controlled to some extent by strictly weighing and mixing them.
[発明が解決しようとする課題] マイクロ波用誘電体材料としては、高周波数帯で無負
荷Qが高いこと、比誘電率εr及び温度特性τfが制御
可能であることが要求されている。[Problems to be Solved by the Invention] As a microwave dielectric material, it is required that the unloaded Q is high in a high frequency band and the relative dielectric constant εr and the temperature characteristic τf can be controlled.
ところが従来技術で無負荷Qを向上させるためには13
50〜1600℃で120時間もの長時間にわたって焼成しなけ
ればならないためエネルギーロスが大きく、焼成炉の消
耗等のコスト高が生じる。また誘電特性は共沈法やホッ
トプレス法等を採用することにより向上するが、これら
の方法は工業的生産には適しておらず実用的とはいえな
い。However, to improve the no-load Q with the conventional technology, 13
Since firing must be performed at 50 to 1600 ° C. for as long as 120 hours, energy loss is large, and costs such as consumption of the firing furnace are increased. The dielectric properties are improved by employing a coprecipitation method or a hot press method, but these methods are not suitable for industrial production and are not practical.
更に比誘電率や共振周波数温度係数は添加物を厳密に
秤量して添加することによって制御し得るが、微量であ
ることが多く秤量個数も増え生産管理が困難である。Further, the relative permittivity and the temperature coefficient of resonance frequency can be controlled by strictly weighing and adding the additives, but the amount is often very small and the number of weighed substances increases, which makes production management difficult.
また1600℃以上の高温度焼成では、前記のように焼結
性が悪く、また焼成時間を長くすると亜鉛が蒸発し特性
が劣化する問題が生じる。In addition, when firing at a high temperature of 1600 ° C. or more, the sinterability is poor as described above, and when the firing time is prolonged, zinc evaporates and the characteristics deteriorate.
本発明の目的は上記のような従来技術の欠点を解消
し、高温での短時間の焼成によって極めて高い無負荷Q
が得られ、また再現性よく比誘電率、共振周波数温度係
数を制御できるような誘電体磁器組成物の製造方法を提
供することにある。An object of the present invention is to solve the above-mentioned drawbacks of the prior art, and to achieve extremely high no-load Q by firing at high temperature for a short time.
It is another object of the present invention to provide a method for producing a dielectric ceramic composition which can control the relative dielectric constant and the temperature coefficient of resonance frequency with good reproducibility.
[課題を解決するための手段] 上記のような目的を達成できる本発明は、一般式Ba
1-X(Zn1/3 Ta2/3)O3で表され0.004≦X≦0.01の範囲
内の組成となるように秤量し仮焼きした仮焼品を、湿式
粉砕を行うことなく乾式法のみによって粉砕し、成形後
1600〜1700℃で1〜10時間焼成する誘電体磁器組成物の
製造方法である。[Means for Solving the Problems] The present invention, which can achieve the above object, has the general formula Ba
A calcined product weighed and calcined to have a composition expressed as 1-X (Zn 1/3 Ta 2/3 ) O 3 and within the range of 0.004 ≦ X ≦ 0.01 is obtained by a dry method without performing wet grinding. Only by grinding and after molding
This is a method for producing a dielectric ceramic composition which is fired at 1600 to 1700 ° C. for 1 to 10 hours.
通常セラミックスの製造工程は、混合→仮焼き→粉砕
→成形→焼成という順序で行われる。仮焼品の粉砕は、
十数〜数十時間の湿式微粉砕が一般的である。湿式微粉
砕を行った後、乾燥した粉体を用いて造粒し、成形を行
う。Normally, the production process of ceramics is performed in the order of mixing, calcination, pulverization, molding, and firing. The grinding of the calcined product
Wet pulverization for ten to several tens of hours is common. After performing wet fine pulverization, granulation is performed using the dried powder, and molding is performed.
本発明の特徴は、このような湿式微粉砕工程をとら
ず、乾式粉砕のみを行う点、及びバリウム組成を化学量
論組成から僅かに不足させた配合比率で製造する点であ
る。The features of the present invention are that only the dry pulverization is performed without such a wet pulverization step, and that the barium composition is produced at a compounding ratio slightly inadequate from the stoichiometric composition.
[作用] Ba(Zn1/3 Ta2/3)O3系の誘導体磁器組成物では、仮
焼品を長時間にわたり湿式微粉砕すると粉体の界面が非
常に不安定になり粉体中のバリウムは水と反応して水酸
化物となる(メカノケミカル反応)。そしてこの水酸化
物は、その後の乾燥工程で空気中の炭酸ガスを吸収し炭
酸バリウムとなる。この工程は再結晶と同じことであ
り、巨大な柱状晶が出現する。このような巨大結晶が現
れると焼結性が極端に悪化する。つまり焼結の過程で分
解して炭酸ガスが飛び出しバリウムが残ることになり、
このような分解物を含んでいる場合には緻密化し難く、
均一な焼成物とならない。従来技術において百数時間も
の焼成を必要としたのは、一つにはこのような理由によ
るものと考えられる。[Function] In the Ba (Zn 1/3 Ta 2/3 ) O 3 derivative ceramic composition, when the calcined product is wet-milled for a long time, the interface of the powder becomes very unstable and the powder Barium reacts with water to form a hydroxide (mechanochemical reaction). The hydroxide absorbs carbon dioxide in the air in the subsequent drying step and becomes barium carbonate. This step is the same as recrystallization, and giant columnar crystals appear. When such a giant crystal appears, the sinterability deteriorates extremely. In other words, it decomposes during the sintering process, carbon dioxide gas jumps out and barium remains,
If it contains such a decomposition product, it is difficult to densify it,
It does not become a uniform fired product. It is believed that one hundred hours of firing was required in the prior art for one reason.
ところがこの種の材料は仮焼きしたものでも非常に軟
らかく、手で砕く程度の粗粉砕でいきなり焼成しても粒
径は十分に小さく焼結性、誘電特性共に殆ど影響が生じ
ないことが判明した。本発明では、湿式微粉砕工程をと
らず、乾式粉砕のみで済ませているため、炭酸バリウム
の巨大結晶が出現することがなく良好な焼結性が得られ
る。However, it was found that this kind of material was very soft even if calcined, and even if it was crushed by hand and roughly crushed, the particle size was small enough and both sinterability and dielectric properties were hardly affected. . In the present invention, since only dry pulverization is required without using a wet pulverization step, good sinterability can be obtained without the appearance of giant crystals of barium carbonate.
ところで従来技術に関連して説明した通り、この系列
の磁器組成物においては化学量論組成では1600℃以上の
高温で焼成しても焼結しない。湿式微粉砕工程をとらな
い場合でも焼結しない。Ba(Zn1/3 Ta2/3)O3で表され
るABO3型ペロブスカイト・セラミックスのBサイトイオ
ンであるZnとTaは長時間の焼成によって規則配列し、超
格子反射が現れる。従来技術で前記のように長時間焼成
を必要としているのも、一つにはこの理由のためであ
る。ところがAサイトイオンであるBaの量を減ずること
より短時間でこの配列が生じること、またBaを減じた量
に応じて配列の度合は大きくなることが判明した。つま
りBaの量を化学量論組成から不足させることによって高
温短時間の焼成で焼結を行わせ誘電特性を向上させるこ
とができる。By the way, as described in connection with the prior art, in this series of porcelain compositions, stoichiometric compositions do not sinter even when fired at a high temperature of 1600 ° C. or higher. It does not sinter even when the wet pulverization step is not performed. Zn and Ta, which are B-site ions of ABO 3 type perovskite ceramics represented by Ba (Zn 1/3 Ta 2/3 ) O 3 , are regularly arranged by prolonged firing, and super lattice reflection appears. This is one of the reasons that the prior art requires firing for a long time as described above. However, it has been found that this arrangement occurs in a shorter time than the reduction of the amount of Ba, which is the A-site ion, and that the degree of arrangement increases in accordance with the amount of reduction of Ba. That is, by making the amount of Ba insufficient from the stoichiometric composition, sintering can be performed by firing at a high temperature for a short time to improve the dielectric characteristics.
焼成温度を上げるとQ値は短時間で向上する。本発明
において1600〜1700℃の高温で焼成する理由はそのため
である。しかし単に高温で焼成するだけでは焼結しな
い。本発明ではそのためBaを化学量論組成よりも少なく
設定している。その値が0.004≦x≦0.01である。この
値の下限0.004は1600℃で1時間焼成した場合に十分な
特性を得られるものとして設定された。焼成時間が1時
間未満の場合には十分な焼結が得られないからである。
逆に10時間を超えてもQ値等にはあまり影響がなく、長
時間になることはエネルギーロス等の観点からも好まし
くないし、Znの蒸発が進み逆に特性が悪化するため好ま
しくない。Baの不足量Xの上限値0.01としたのは、それ
を超えると誘電特性が低下するためである。Increasing the firing temperature improves the Q value in a short time. This is the reason for firing at a high temperature of 1600 to 1700 ° C. in the present invention. However, sintering does not occur simply by firing at a high temperature. In the present invention, therefore, Ba is set to be smaller than the stoichiometric composition. The value is 0.004 ≦ x ≦ 0.01. The lower limit of this value, 0.004, was set so as to obtain sufficient characteristics when fired at 1600 ° C. for 1 hour. If the firing time is less than 1 hour, sufficient sintering cannot be obtained.
Conversely, if the time exceeds 10 hours, the Q value and the like are not significantly affected, and it is not preferable that the time is long from the viewpoint of energy loss or the like, and it is not preferable because the evaporation of Zn proceeds to deteriorate the characteristics. The reason why the upper limit value of the insufficient amount X of Ba is set to 0.01 is that if it exceeds that value, the dielectric properties deteriorate.
またBaの不足量の調整によって添加剤を加えることな
く無負荷Qが極めて高い値のままで比誘電率や共振周波
数温度係数を制御することが可能となる。Further, by adjusting the amount of Ba deficiency, it becomes possible to control the relative dielectric constant and the resonance frequency temperature coefficient without adding an additive and keeping the unloaded Q at an extremely high value.
[実施例] 出発原料として純度99.7%のBaCO3、純度99.9%のZn
O、同じく純度99.9%のTa2O5を用い、一般式Ba1-X(Zn
1/3 Ta2/3)O3で表され、0.004≦X≦0.01の組成範囲内
となるように秤量し、ジルコニアボールを備えたポリエ
チレン製ボールミルで純水と共に20時間湿式混合した。
この混合物をボールミルから取り出し乾燥した後、金型
と油圧プレスを用いて成形圧力500kg/cm2にて成形し、
空気中において温度1300℃で10時間の仮焼きを行った。[Example] BaCO 3 having a purity of 99.7% and Zn having a purity of 99.9% as starting materials
O, also using 99.9% pure Ta 2 O 5 , the general formula Ba 1-X (Zn
1/3 Ta 2/3 ) O 3 , weighed so as to fall within the composition range of 0.004 ≦ X ≦ 0.01, and wet-mixed with pure water in a polyethylene ball mill equipped with zirconia balls for 20 hours.
After taking out this mixture from the ball mill and drying, it was molded at a molding pressure of 500 kg / cm 2 using a mold and a hydraulic press,
Calcination was performed in air at 1300 ° C. for 10 hours.
この仮焼品を乳鉢で軽く砕き、得られた粉末にバイン
ダーとしてポリビニルアルコール溶液を10重量%添加し
て均質にした後、60メッシュ篩を通して造粒した。この
造粒粉を金型と油圧プレスを用いて成形圧力3000kg/cm2
で直径14mmの円板に成形した。The calcined product was crushed lightly in a mortar, and the obtained powder was homogenized by adding 10% by weight of a polyvinyl alcohol solution as a binder, and then granulated through a 60 mesh sieve. This granulated powder is formed using a mold and a hydraulic press at a molding pressure of 3000 kg / cm 2
Into a 14 mm diameter disc.
この成形品を1600℃以上1700℃以下の温度で10時間以
下焼成し誘電体磁器を得た。上下両面及び側面を削り取
り、誘電体円柱共振器法により約7GHzの周波数で無負荷
Qと比誘電率を測定した。共振周波数の温度係数は−30
℃〜80℃の範囲で測定し求めた。This molded product was fired at a temperature of 1600 ° C. or more and 1700 ° C. or less for 10 hours or less to obtain a dielectric porcelain. Both the upper and lower surfaces and the side surfaces were scraped off, and the unloaded Q and relative permittivity were measured at a frequency of about 7 GHz by the dielectric cylinder resonator method. Temperature coefficient of resonance frequency is -30
It was measured and determined in the range of ° C to 80 ° C.
第1図は1600℃で4時間焼成した場合のBa不足量Xに
対する無負荷Q、比誘電率εr、共振周波数温度係数τ
fの関係を示すグラフである。同図に示すようにBaを化
学量論組成よりも少なくし湿式微粉砕工程をとらないこ
とによって良好な誘電特性が得られることが判る。しか
もBa不足量Xを変化させることによって無負荷Qは極め
て高い値のままで推移するが、比誘電率εr及び共振周
波数温度係数τrが変化することが判る。従ってBa不足
量Xを制御することによって高いQ値のまま比誘電率ε
rと共振周波数温度係数τfを制御できることになる。FIG. 1 shows the unloaded Q, the relative permittivity εr, and the resonance frequency temperature coefficient τ with respect to the Ba deficiency X when baked at 1600 ° C. for 4 hours.
It is a graph which shows the relationship of f. As shown in the figure, it can be seen that good dielectric properties can be obtained by making Ba less than the stoichiometric composition and eliminating the wet pulverization step. In addition, it can be seen that by changing the Ba deficiency X, the no-load Q remains at an extremely high value, but the relative permittivity εr and the resonance frequency temperature coefficient τr change. Therefore, by controlling the Ba deficiency X, the relative dielectric constant ε can be maintained at a high Q value.
r and the resonance frequency temperature coefficient τf can be controlled.
Baの不足量によって比誘電率εrが変化するのは結晶
構造が著しく異なるためであろう。その様子を第2図に
示す。これはX線回折でZn,Taの超格子反射を測定した
結果である。焼成条件が同じであってもBaの組成比率が
変わることによって規則配列の度合と誘電特性は全く異
なってくる。The reason that the relative permittivity εr changes depending on the amount of Ba deficiency may be because the crystal structure is significantly different. This is shown in FIG. This is the result of measuring the superlattice reflection of Zn and Ta by X-ray diffraction. Even when the firing conditions are the same, the degree of regular arrangement and the dielectric properties are completely different due to the change in the composition ratio of Ba.
第3図は1600℃−1時間の焼成条件における誘電特性
を示している。この第3図から、最も悪い焼成条件1600
℃−1時間で実用的な特性を満たす領域は、Baの不足量
Xが0.004〜0.01である。本発明の数値範囲はこのよう
な実験結果から求められている。この焼成条件ではBaの
不足量Xが0.006の時に無負荷Qが最も大きく、X=0.0
05近傍の時に比誘電率εrが最も大きくなる。FIG. 3 shows the dielectric characteristics under the firing conditions of 1600 ° C. for one hour. From FIG. 3, the worst firing conditions 1600
In the region satisfying the practical characteristics in 1 ° C.-1 hour, the shortage X of Ba is 0.004 to 0.01. The numerical range of the present invention is determined from such experimental results. Under these firing conditions, the unloaded Q is the largest when the shortage X of Ba is 0.006, and X = 0.0
When it is near 05, the relative permittivity εr becomes the largest.
第4図はBaの不足量Xが0.005の時に1600℃で焼成し
た場合の誘電特性を示しており、横軸は焼成時間を示し
ている。無負荷Qは1時間の焼成で急上昇し、その後徐
々に増加していく。比誘電率εrは焼成時間が1時間の
時に最も高く、その後徐々に低下する。FIG. 4 shows the dielectric characteristics when firing at 1600 ° C. when the shortage X of Ba is 0.005, and the horizontal axis shows the firing time. The no-load Q rises sharply for one hour of firing, and then gradually increases. The relative dielectric constant εr is highest when the firing time is one hour, and then gradually decreases.
これらのことから焼成時間は最低1時間は必要であ
る。焼成時間の上限値を10時間としたのは、それ以上焼
成しても特性はあまり向上せず、長時間焼成する分だけ
Zn成分の蒸発が起こり逆に特性が低下してくるし、また
長時間焼成することはエネルギーロスにもつながり好ま
しくないからである。For these reasons, the firing time must be at least one hour. The reason why the upper limit of the firing time is set to 10 hours is that the characteristics are not significantly improved even if firing is performed longer, and only the amount of time required for firing for a long time is sufficient.
This is because the evaporation of the Zn component causes the characteristics to deteriorate, and baking for a long time leads to energy loss, which is not preferable.
[発明の効果] 本発明ではBaが化学量論組成よりも僅かに少ない配合
比率となるように秤量し仮焼きした仮焼品を、湿式微粉
砕することなく乾式で粉砕し、成形後1600〜1700℃で1
〜10時間焼成する方法であるから、従来技術のような数
十時間から百数十時間にも及ぶ焼成時間を大幅に短縮で
き、エネルギーコストの低減等を含めて大幅な製造コス
トの低減が可能となる。また従来技術では共沈法やホッ
トプレス法を用いなければならなかった30程度以上の高
い比誘電率を、本発明では通常の常圧焼成で任意に選択
焼成できる。[Effects of the Invention] In the present invention, a calcined product weighed and calcined so that Ba has a compounding ratio slightly smaller than the stoichiometric composition is pulverized by a dry method without wet pulverization, and after molding, 1600 to 1 at 1700 ° C
Because it is a method of firing for up to 10 hours, the firing time ranging from several tens of hours to one hundred and several tens of hours as in the conventional technology can be significantly reduced, and a significant reduction in manufacturing costs including reduction in energy cost etc. is possible Becomes In the present invention, a high relative dielectric constant of about 30 or more, which had to use a coprecipitation method or a hot press method in the prior art, can be arbitrarily selected by ordinary normal pressure firing in the present invention.
更に本発明では共振周波数温度係数や比誘電率の制御
に添加物を必要とせず、基本原料の混合比の変化のみで
再現性よくそれらの特性を容易に制御することができ
る。Further, in the present invention, additives are not required for controlling the resonance frequency temperature coefficient and the relative dielectric constant, and their characteristics can be easily controlled with good reproducibility only by changing the mixing ratio of the basic raw materials.
本発明では湿式微粉砕工程が要らず、それに伴う乾燥
工程も不要となるため器具ロスによる秤量誤差が生じる
可能性が少なくなるし、難焼結化を招く物質が出現する
こともないため、工程が簡素化され特性の良好な誘電体
磁器組成物を製造できる。In the present invention, the wet fine pulverizing step is not required, and the accompanying drying step is also unnecessary, so that the possibility of weighing error due to tool loss is reduced, and there is no appearance of a substance that causes difficulty in sintering. Can be simplified and a dielectric ceramic composition having good characteristics can be manufactured.
第1図は1600℃−4時間の焼成条件における誘電特性を
示すグラフ、第2図はBa不足量についてのX線回折パタ
ーンを示す図、第3図は1600℃−1時間の焼成条件にお
ける誘電特性を示すグラフ、第4図はX=0.005の組成
において組成温度を1600℃としたときの焼成時間に対す
る誘電特性を示すグラフである。FIG. 1 is a graph showing the dielectric characteristics under the firing conditions of 1600 ° C. for 4 hours, FIG. 2 is a diagram showing the X-ray diffraction pattern for the Ba deficiency, and FIG. FIG. 4 is a graph showing the dielectric characteristics with respect to the sintering time when the composition temperature is 1600 ° C. in the composition where X = 0.005.
Claims (1)
004≦X≦0.01の範囲内の組成となるように秤量し、仮
焼きした仮焼品を、乾式法のみによって粉砕し、成形後
1600〜1700℃で1〜10時間焼成することを特徴とする誘
電体磁器組成物の製造方法。(1) The compound represented by the general formula Ba 1-X (Zn 1/3 Ta 2/3 ) O 3 .
The calcined product weighed and calcined so as to have a composition within the range of 004 ≦ X ≦ 0.01 is pulverized only by a dry method, and after molding.
A method for producing a dielectric ceramic composition, comprising firing at 1600 to 1700 ° C for 1 to 10 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63203407A JP2594465B2 (en) | 1988-08-16 | 1988-08-16 | Method for producing dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63203407A JP2594465B2 (en) | 1988-08-16 | 1988-08-16 | Method for producing dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0251464A JPH0251464A (en) | 1990-02-21 |
| JP2594465B2 true JP2594465B2 (en) | 1997-03-26 |
Family
ID=16473552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63203407A Expired - Lifetime JP2594465B2 (en) | 1988-08-16 | 1988-08-16 | Method for producing dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2594465B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04308606A (en) * | 1991-04-04 | 1992-10-30 | Fuji Elelctrochem Co Ltd | Manufacture of microwave dielectric porcelain composition |
| WO2001056952A1 (en) * | 2000-01-31 | 2001-08-09 | Ngk Spark Plug Co., Ltd. | Dielectric porcelain composition and dielectric resonator using the same |
-
1988
- 1988-08-16 JP JP63203407A patent/JP2594465B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0251464A (en) | 1990-02-21 |
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