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JP2619003B2 - Oxygen detecting element and method for manufacturing the same - Google Patents
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JP2619003B2 - Oxygen detecting element and method for manufacturing the same - Google Patents

Oxygen detecting element and method for manufacturing the same

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Publication number
JP2619003B2
JP2619003B2 JP19546188A JP19546188A JP2619003B2 JP 2619003 B2 JP2619003 B2 JP 2619003B2 JP 19546188 A JP19546188 A JP 19546188A JP 19546188 A JP19546188 A JP 19546188A JP 2619003 B2 JP2619003 B2 JP 2619003B2
Authority
JP
Japan
Prior art keywords
flow path
thin film
substrate
film heater
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP19546188A
Other languages
Japanese (ja)
Other versions
JPH0245754A (en
Inventor
正樹 桂
正喜 江刺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP19546188A priority Critical patent/JP2619003B2/en
Publication of JPH0245754A publication Critical patent/JPH0245754A/en
Application granted granted Critical
Publication of JP2619003B2 publication Critical patent/JP2619003B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は、工業用、医療用及び民生用等の分野に使用
される酸素検出素子及びその製造方法に関する。
[Detailed Description of the Invention] [Object of the Invention] (Industrial application field) The present invention relates to an oxygen detection element used in fields such as industrial use, medical use and consumer use, and a method for producing the same.

(従来の技術) 酸素の計測は、工業、医療、民生の分野で広く必要と
されてきた。これらの用途の酸素検出素子としては、従
来、ジルコニア式酸素検出素子が広く使用され、僅かに
磁気式酸素検出素子も用いられている。
(Prior Art) Oxygen measurement has been widely required in industrial, medical and consumer fields. As an oxygen detecting element for these uses, a zirconia-type oxygen detecting element has been widely used, and a magnetic oxygen detecting element has been slightly used.

上記ジルコニア式酸素検出素子は、第17図に示す構造
のものが知られている。即ち、図中の1は隔壁2に挿着
されたジルコニア磁器からなる片封じパイプである。こ
のパイプ1の内面には、内部電極3が設けられ、かつ外
面には外部電極4が設けられている。これら電極3、4
には、前記パイプ1端部においてリード線5、6が夫々
接続されている。前記パイプ1の片封じ部側周囲には、
ヒータ7が配設されている。かかる構成の酸素検出素子
において、片封じパイプ1内に基準酸素分圧をもつ気体
8を充填し、パイプ1の片封じ部側に配置したヒータ7
によりその周囲の被検気体9を加熱すると、パイプ1の
内部電極3と外部電極4の間に前記気体8を被検気体9
の酸素分圧の比の対数に比例した起電力が生じ、これに
よって被倹気体9の酸素濃度を計測するものである。
As the zirconia-type oxygen detecting element, one having a structure shown in FIG. 17 is known. That is, reference numeral 1 in the drawing denotes a single-seal pipe made of zirconia porcelain inserted into the partition 2. An internal electrode 3 is provided on the inner surface of the pipe 1, and an external electrode 4 is provided on the outer surface. These electrodes 3, 4
Are connected to lead wires 5 and 6, respectively, at the end of the pipe 1. Around the sealed portion side of the pipe 1,
A heater 7 is provided. In the oxygen detecting element having such a configuration, the gas 8 having a reference oxygen partial pressure is filled in the single-sealed pipe 1 and the heater 7 disposed on the single-sealed portion side of the pipe 1.
When the test gas 9 surrounding the test gas 9 is heated, the gas 8 is interposed between the internal electrode 3 and the external electrode 4 of the pipe 1.
An electromotive force proportional to the logarithm of the oxygen partial pressure ratio is generated, and the oxygen concentration of the gas 9 is measured.

上記磁気式酸素検出素子は、第18図に示す構造のもの
が知られている。即ち、図中の11は流路を形成するため
の環状ガラス管であり、このガラス管11の直径方向には
酸素を含む被倹気体の導入部12及び排出部13が設けられ
ている。また、これら導入部12及び排出部13を結ぶ直線
と直交する方向の前記環状ガラス管11には、水平バイパ
ス管14が連結されている。このバイパス管14には、ブリ
ッジ構成をもつ2つのヒータ15a、15bが巻装されてい
る。前記環状ガラス管11と一方のヒータ15aが巻回され
たバイパス管14の一端との連結付近の流路に垂直に固定
磁界16を印加するための磁石(図示せず)が配設されて
いる。なお、図中の17はAC電源、18は出力端子である。
かかる構成の酸素検出素子において、導入部12から酸素
を含む被検気体を環状ガラス管11内に導入し、一方のヒ
ータ15aを一定温度に保ち、図示しない磁石により環状
ガラス管11と一方のヒータ15a(ブリッジ辺)が巻回さ
れたバイパス管14の一端との連結付近の流路に垂直に固
定磁界16を印加すると、被倹気体中の酸素が磁界16中に
引込まれ、該酸素は一方のヒータ15aにより加熱されて
磁化率が急激に減少するため、気体は同第15図の矢印に
示すようにバイパス管14の左から右側に向かう流れが生
じる。このため、前記ブリッジ辺に温度差が生じ、これ
による抵抗の差によって一定電圧が印加された他方のヒ
ータ15bとによるブリッジが不平衡となり、出力端子18
から酸素濃度に相関する出力が生じる。この場合、気体
の流速は気体中の酸素濃度に比例し、温度差、つまり抵
抗差も酸素濃度に比例する。
As the magnetic oxygen detecting element, one having a structure shown in FIG. 18 is known. That is, reference numeral 11 in the drawing denotes an annular glass tube for forming a flow path, and an introduction portion 12 and a discharge portion 13 for a gas to be reduced containing oxygen are provided in the diameter direction of the glass tube 11. In addition, a horizontal bypass pipe 14 is connected to the annular glass pipe 11 in a direction orthogonal to a straight line connecting the introduction section 12 and the discharge section 13. Two heaters 15a and 15b having a bridge configuration are wound around the bypass pipe 14. A magnet (not shown) for vertically applying a fixed magnetic field 16 is provided in a flow path near the connection between the annular glass tube 11 and one end of a bypass tube 14 around which one heater 15a is wound. . In the figure, 17 is an AC power supply and 18 is an output terminal.
In the oxygen detection element having such a configuration, a test gas containing oxygen is introduced into the annular glass tube 11 from the introduction section 12, one heater 15a is maintained at a constant temperature, and the annular glass tube 11 and one heater are maintained by a magnet (not shown). When a fixed magnetic field 16 is applied vertically to the flow path near the connection with one end of the bypass pipe 14 around which the 15a (bridge side) is wound, oxygen in the gas to be saved is drawn into the magnetic field 16, and the oxygen Since the magnetic susceptibility is rapidly reduced by being heated by the heater 15a, the gas flows from the left to the right of the bypass pipe 14 as shown by the arrow in FIG. For this reason, a temperature difference is generated on the bridge side, and the bridge between the bridge and the other heater 15b to which a constant voltage is applied becomes unbalanced due to a difference in resistance due to the temperature difference.
Produces an output correlated to the oxygen concentration. In this case, the gas flow rate is proportional to the oxygen concentration in the gas, and the temperature difference, that is, the resistance difference, is also proportional to the oxygen concentration.

しかしながら、上述したジルコニア式酸素検出素子は
精度が高く、検出酸素濃度も広いが、次のような欠点を
有する。
However, the above-mentioned zirconia-type oxygen detecting element has high accuracy and wide detection oxygen concentration, but has the following disadvantages.

.動作温度が650℃と高いため、使用場所が制限され
る。しかも、検出部であるジルコニア磁器製の片封じパ
イプも大きく(直径8mm×長さ50mm程度)、かつ外囲器
が大形となる。また、加熱用の電力も数10Wと大きくな
るため、電源も大容量となり、電池による駆動は事実上
困難となる。
. Since the operating temperature is as high as 650 ° C, the place of use is limited. In addition, the single-piece sealed pipe made of zirconia porcelain, which is the detection unit, is large (about 8 mm in diameter x about 50 mm in length), and the envelope becomes large. In addition, since the power for heating is as large as several tens of watts, the power supply also has a large capacity, and it is practically difficult to drive with a battery.

.常に酸素濃度が一定に保持された基準気体を必要と
し、操作が面倒となる。
. It requires a reference gas whose oxygen concentration is always kept constant, which makes the operation cumbersome.

.微量の可燃性ガスの存在により出力が変動する。. The output fluctuates due to the presence of a small amount of combustible gas.

従って、上記ジルコニア式酸素検出素子は上記〜
の点から設置場所や用途が限られるため、主として工業
用に使用されており、医療用、実験用や民生用に使用さ
れている例は希である。
Therefore, the zirconia oxygen detection element is the above-mentioned ~
In view of the above, the installation place and application are limited, so that it is mainly used for industrial use, and rarely used for medical use, laboratory use, or consumer use.

一方、上述した磁気式酸素検出素子は上記、のよ
うな欠点はないものの、酸素を固定磁界により磁界中に
引込み、引込まれた酸素をヒータにより加熱して磁化率
を急激に減少させるために、磁界の前後で気圧差を生ぜ
しめる必要がある。この場合、ヒータ15aは第18図に示
すように断熱性を有するガラス製バイパス管14の外表面
に巻回されているため、環状ガラス管11等により形成さ
れた流路への熱伝達性が低く、前記磁化率を急激に減少
させるのに多大な熱量が必要となる。しかも、前記磁化
率の急激な減少により生じた気体の流れによるヒータ15
aの温度差を検知する際にも断熱性を有する同バイパス
管14を通してなされるため、ヒータ15aの加熱温度を高
くする必要がある。従って、磁気式酸素検出素子では磁
化率を急激に減少化させ、かつ検出感度を向上させる観
点から、磁界近傍に設置されるヒータは通常250℃程度
に設定する必要があるため、消費電力が大きくなり、こ
れに伴って素子本体の外形も大きくなる。また、かかる
構造の酸素検出素子でば気体流路の形状により性能が著
しく変動する。上述した酸素検出素子では、気体流路を
形成するための環状ガラス管及びバイパス管はガラス細
工により製作しているので、高精度の環状ガラス管等を
再現性よく作れず、性能がばらつくという致命的な問題
があった。
On the other hand, although the above-described magnetic oxygen detection element does not have the above-mentioned disadvantages, in order to draw oxygen into a magnetic field by a fixed magnetic field and heat the drawn oxygen by a heater to rapidly reduce the magnetic susceptibility, It is necessary to create a pressure difference before and after the magnetic field. In this case, since the heater 15a is wound around the outer surface of the glass bypass tube 14 having heat insulation as shown in FIG. 18, the heat transfer to the flow path formed by the annular glass tube 11 and the like is reduced. Therefore, a large amount of heat is required to rapidly reduce the magnetic susceptibility. In addition, the heater 15 due to the gas flow generated by the rapid decrease of the magnetic susceptibility
When the temperature difference a is detected, the temperature difference is detected through the bypass pipe 14 having heat insulation properties. Therefore, it is necessary to increase the heating temperature of the heater 15a. Therefore, from the viewpoint of sharply decreasing the magnetic susceptibility and improving the detection sensitivity in the magnetic oxygen detection element, the heater installed near the magnetic field usually needs to be set to about 250 ° C., so that the power consumption is large. As a result, the outer shape of the element body also increases. In the case of the oxygen detecting element having such a structure, the performance remarkably varies depending on the shape of the gas flow path. In the oxygen detection element described above, since the annular glass tube and the bypass tube for forming the gas flow path are manufactured by glasswork, a high-precision annular glass tube or the like cannot be made with good reproducibility, and the performance varies. Problem.

(発明が解決しようとする課題) 本発明は、上記従来の課題を解決するためになされた
もので、薄膜ヒータによる加熱温度を低温化しても充分
な感度を得ることが可能で、かつコンパクト化が可能な
酸素検出素子及びかかる検出素子を高精度かつ再現性よ
く製造し得る方法を提供しようとするものである。
(Problems to be Solved by the Invention) The present invention has been made to solve the above-mentioned conventional problems, and it is possible to obtain sufficient sensitivity even if the heating temperature by the thin film heater is lowered, and to reduce the size. It is an object of the present invention to provide an oxygen detection element capable of performing the above-mentioned method and a method capable of manufacturing such a detection element with high accuracy and high reproducibility.

[発明の構成] (課題を解決するための手段) 本発明の酸素検出素子は、被倹気体の流路を有し、か
つ該流路内にヒータを設けた素子本体と、この本体の流
路に垂直な固定磁界を印加するための磁石とを具備した
酸素検出素子において、前記素子本体は、少なくとも一
方に溝を有する2枚のシリコンもしくはガラスからなる
基板を貼り合わせて該溝に対応する箇所に流路を形成
し、かつ各基板間に薄膜ヒータを前記流路を横切ると共
に該流路内で各基板に対して非接触状態で配設した構造
を有することを特徴とするものである。
[Constitution of the Invention] (Means for Solving the Problems) An oxygen detection element of the present invention has an element main body having a flow path for a gas to be conserved and having a heater in the flow path, and a flow path of the main body. An oxygen detecting element comprising a magnet for applying a fixed magnetic field perpendicular to a path, wherein the element body corresponds to the groove by bonding two silicon or glass substrates having a groove on at least one side. A flow path is formed at a location, and a thin film heater is provided between the substrates so as to cross the flow path and to be disposed in a non-contact state with each substrate in the flow path. .

本発明の製造方法は、一方のシリコン又はガラスから
なる基板表面に浅い凹部を形成する工程と、この凹部を
含む前記基板全面に金属薄膜を堆積した後、パターニン
グして前記凹部内に薄膜ヒータを形成する工程と、前記
基板を選択的にエッチングして前記薄膜ヒータの中央付
近下を横切る溝を形成する工程と、他方のシリコン又は
ガラスからなる基板を前記薄膜ヒータが配置された側の
前記基板表面に貼り合せることにより前記溝に対応する
箇所に流路が形成され、かつ各基板間に薄膜ヒータが該
流路を横切ると共に該流路内で各基板に対して非接触状
態で配設された構造の素子本体を作成する工程とを具備
したことを特徴とするものである。
In the manufacturing method of the present invention, a step of forming a shallow concave portion on the surface of one substrate made of silicon or glass, and depositing a metal thin film on the entire surface of the substrate including the concave portion, patterning and forming a thin film heater in the concave portion Forming a groove, selectively etching the substrate to form a groove crossing below the center of the thin film heater, and forming the other silicon or glass substrate on the side where the thin film heater is disposed. A flow path is formed at a position corresponding to the groove by bonding to the surface, and a thin film heater is provided between the substrates in a non-contact state with each substrate in the flow path while traversing the flow path. And forming a device body having the above structure.

本発明の別の製造方法は、一方のシリコン又はガラス
からなる基板表面に金属薄膜を堆積した後、パターニン
グして薄膜ヒータを形成する工程と、前記基板を選択的
にエッチングして前記薄膜ヒータの中央付近下を横切る
溝を形成する工程と、予め前記基板の溝に対応する箇所
に溝を設けた他方のシリコン又はガラスからなる基板を
前記薄膜ヒータが配置された側の前記基板表面に貼り合
せることにより前記各基板の溝に対応する箇所に流路が
形成され、かつ各基板間に薄膜ヒータが該流路を横切る
と共に該流路内で各基板に対して非接触状態で配設され
た構造の素子本体を作製する工程とを具備したことを特
徴とするものである。
Another manufacturing method of the present invention includes a step of forming a thin film heater by depositing a metal thin film on a surface of a substrate made of one of silicon and glass, and forming a thin film heater by selectively etching the substrate. A step of forming a groove that crosses below the center, and bonding another silicon or glass substrate provided with a groove in a position corresponding to the groove of the substrate in advance to the substrate surface on the side where the thin film heater is disposed Thereby, a flow path was formed at a position corresponding to the groove of each of the substrates, and a thin film heater was provided between the substrates in a state of non-contact with each substrate in the flow path while traversing the flow path. And a step of manufacturing an element body having a structure.

(作用) 本発明によれば、少なくとも一方の溝を有する2枚の
シリコンもしくはガラスからなる基板を貼り合せて該溝
に対応する箇所に流路を形成し、かつ各基板間に薄膜ヒ
ータを該流路を横切ると共に該流路内で各基板に対して
非接触状態で配設した素子本体を備え、この本体の流路
に垂直な固定磁界を印加するための磁石を設ることによ
って、該流路に供給された被検気体中の酸素を前記固定
磁界により磁界中に引込み、引込まれた酸素を前記薄膜
ヒータでの加熱によって磁化率を効率よく急激に減少さ
せて磁界の前後で気圧差を生じせしめことができる。つ
まり、前記薄膜ヒータは流路を横切ると共に該流路内で
各基板に対して非接触状態で配設されているため、流路
内の被検気体に対する熱伝達効率を著しく向上でき、該
ヒータによる低温の加熱(50℃以上)によって前記磁化
率を効率よく急激に減少させて磁界の前後で気圧差を生
じせしめることができる。こうした磁界の前後で気圧差
を生じ、流路内の気体の流れが生じた場合、前記薄膜ヒ
ータは該流路内で各基板に対して非接触状態で配設され
ているため、該薄膜ヒータが低温加熱されていても前記
気体の流れにより充分な温度差を生じ、ヒータの電気抵
抗の変化から気体中の酸素を高感度で検出できる。この
ような薄膜ヒータによる加熱温度の低減化により消費電
力を少なくできるため、素子本体のコンパクト化を図る
ことができ、しかも乾電池で動作する移動形酸素検出素
子も実現できる。
(Operation) According to the present invention, two silicon or glass substrates having at least one groove are bonded to form a flow path at a location corresponding to the groove, and a thin film heater is provided between the substrates. An element main body is provided that traverses the flow path and is disposed in a non-contact state with respect to each substrate in the flow path, and a magnet for applying a fixed magnetic field perpendicular to the flow path of the main body is provided. Oxygen in the test gas supplied to the flow path is drawn into the magnetic field by the fixed magnetic field, and the drawn oxygen is heated by the thin-film heater to efficiently and rapidly reduce the magnetic susceptibility, thereby causing a pressure difference between before and after the magnetic field. Can be caused. That is, since the thin film heater crosses the flow path and is disposed in a non-contact state with each substrate in the flow path, the heat transfer efficiency to the test gas in the flow path can be significantly improved. The magnetic susceptibility can be efficiently and rapidly reduced by low-temperature heating (at least 50 ° C.) to generate a pressure difference before and after a magnetic field. When a pressure difference occurs before and after such a magnetic field and a gas flows in the flow path, the thin film heater is disposed in a non-contact state with each substrate in the flow path. Even if is heated at a low temperature, a sufficient temperature difference is generated by the flow of the gas, and oxygen in the gas can be detected with high sensitivity from a change in electric resistance of the heater. Since the power consumption can be reduced by reducing the heating temperature by such a thin film heater, the element body can be made compact, and a mobile oxygen detection element that operates on a dry battery can also be realized.

また、本発明の微細加工技術による製造方法によれば
前述した優れた作用を有する酸素検出素子を高精度かつ
再現性よく得ることができる。つまり、かかる構造の酸
素検出素子では気体流路の形状により性能が著しく変動
するが、本発明方法では既述の如く気体流路等を有する
素子本体を高精度かつ再現性よく作製できるため、性能
のばらつきのない高信頼性の酸素検出素子を得ることが
できる。
Further, according to the manufacturing method using the fine processing technique of the present invention, the oxygen detecting element having the above-described excellent action can be obtained with high accuracy and high reproducibility. In other words, the performance of the oxygen detection element having such a structure varies significantly depending on the shape of the gas flow path. However, in the method of the present invention, the element body having the gas flow path and the like can be manufactured with high precision and reproducibility as described above. It is possible to obtain a highly reliable oxygen detection element having no variation in the above.

(実施例) 以下、本発明の実施例を図示する製造工程を併記して
詳細に説明する。
(Example) Hereinafter, a manufacturing process illustrating an example of the present invention will be described in detail together with a manufacturing process.

実施例1 まず、シリコン基板21をウェット酸化して酸化膜を形
成した後、フォトエッチング技術によりパターニングし
て酸化膜パターン22を形成した(第1図(a)図示)。
つづいて、同図(b)に示すように前記酸化膜パターン
22をマスクとして基板21表面を35重量%濃度のKOH溶液
(温度70℃)でエッチングして凹部23を形成した。
Example 1 First, an oxide film was formed by wet oxidation of a silicon substrate 21 and then patterned by a photoetching technique to form an oxide film pattern 22 (FIG. 1A).
Subsequently, as shown in FIG.
Using the mask 22 as a mask, the surface of the substrate 21 was etched with a 35% by weight KOH solution (at a temperature of 70 ° C.) to form a recess 23.

次いで、酸化膜パターン22を除去した後、ドライ酸化
及びCVD法により凹部23を含む全面に厚さ2.1μmのSiO2
膜24を形成し、更に電子ビーム蒸着により厚さ4000Åの
Ni膜25を堆積した(同図(c)図示)。つづいて、フォ
トエッチング技術により前記Ni膜25及びSiO2膜24を順次
パターニングして中央の凹部23上に基板21側からSiO2
らなる下地層26及び薄膜ヒータ27及び該ヒータ27の端子
部28a、28bを夫々形成した。ひきつづき、CVD法により
全面に厚さ2μmのSiO2膜を堆積した後、フォトエッチ
ング技術によりパターニングしてて前記薄膜ヒータ27を
覆う保護膜29及びこの後の工程のマスクとなるSiO2パタ
ーン30を形成した(同図(d)図示)。
Next, after removing the oxide film pattern 22, a 2.1 μm thick SiO 2 layer is formed on the entire surface including the concave portion 23 by dry oxidation and CVD.
A film 24 is formed, and a thickness of 4000 mm is further formed by electron beam evaporation.
A Ni film 25 was deposited (illustrated in FIG. 3C). Subsequently, the Ni film 25 and the SiO 2 film 24 are sequentially patterned by a photo-etching technique, and the base layer 26 and the thin film heater 27 made of SiO 2 and the terminal portion 28a of the heater 27 are formed on the central concave portion 23 from the substrate 21 side. , 28b, respectively. Subsequently, after depositing a 2 μm-thick SiO 2 film on the entire surface by the CVD method, the protective film 29 covering the thin-film heater 27 and the SiO 2 pattern 30 serving as a mask in the subsequent steps are patterned by photoetching technology. (FIG. 3D).

次いで、SiO2パターン30をマスクとして露出したシリ
コン基板21の凹部23をヒドラジン溶液によりエッチング
して薄膜ヒータ27下を横切るV型溝31及び幅広の溝32を
形成した(同図(e)図示)。つづいて、予め電解放電
加工によりガス導入穴33、ガス排出穴34、配線取出し穴
35a、35bを開孔したパイレックスガラス板36を前記溝32
が形成された基板21のSiO2パターン30上に重ねた後、基
板21及びガラス板36を300℃で加熱し、ガラス板36側に
−800Vの直流電圧を印加して陽極接合した。(同図
(f)図示)。つづいて、この接合体を12mm×19mmの寸
法にスクライブした後、前記パイレックスガラス板36の
配線取出し穴35a、35bに導電性エポキシ樹脂を充填して
前記端子部28a、28bと接続されたヒータ端子37a、37bを
形成し、更に該端子37a、37bにリード線38a、38bを埋
設、接続した。ひきつづき、ガラス板36上にガス導入管
39、ガス排出管40を該ガラス板36のガス導入穴33、ガス
排出穴34に夫々合致するようにエポキシ樹脂接着剤41に
より連結して素子本体42を作製した(同図(g)、第2
図図示)。なお、第2図は第1図(g)の平面図であ
る。かかる工程により作製された素子本体42には、前記
V型溝31に対応する箇所にバイパス流路43、前記溝32に
対応する箇所に流路44が形成され、かつ前記薄膜ヒータ
29が前記バイパス流路43を横切ると共に前記基板21への
凹部23の形成により該流路43内で基板21及びパイレック
スガラス板36に対して非接触状態で配設された構造を有
する。
Next, the concave portion 23 of the exposed silicon substrate 21 was etched with a hydrazine solution using the SiO 2 pattern 30 as a mask, thereby forming a V-shaped groove 31 and a wide groove 32 crossing under the thin film heater 27 (illustrated in FIG. 3E). . Then, gas introduction hole 33, gas discharge hole 34, wiring takeout hole
The Pyrex glass plate 36 having holes 35a and 35b
There after superimposed on the SiO 2 pattern 30 of the substrate 21 formed, the substrate 21 and the glass plate 36 was heated at 300 ° C., and anodic bonding by applying a DC voltage of -800V to the glass plate 36 side. (Illustration (f) in the figure). Subsequently, after this joined body was scribed to a size of 12 mm × 19 mm, the wiring terminals 35 a and 35 b of the Pyrex glass plate 36 were filled with a conductive epoxy resin, and the heater terminals connected to the terminal portions 28 a and 28 b were connected. 37a and 37b were formed, and lead wires 38a and 38b were buried and connected to the terminals 37a and 37b. Continued, gas introduction pipe on glass plate 36
39, a gas exhaust pipe 40 was connected by an epoxy resin adhesive 41 so as to match the gas inlet hole 33 and the gas exhaust hole 34 of the glass plate 36, respectively, to produce an element body 42 (FIG. 2
Illustration). FIG. 2 is a plan view of FIG. 1 (g). In the element body 42 manufactured by such a process, a bypass flow path 43 is formed at a position corresponding to the V-shaped groove 31, a flow path 44 is formed at a position corresponding to the groove 32, and the thin film heater is formed.
29 has a structure in which the substrate 21 and the Pyrex glass plate 36 are disposed in a non-contact state in the channel 43 by forming the concave portion 23 in the substrate 21 while traversing the bypass channel 43.

次いで、前記素子本体42の表裏面側に図示しないヨー
クにより支持された直径7mm、厚さ約3mmの円板状バリウ
ムフェライト磁石45a、45bを夫々約1.5mmの隙間をあけ
て配置した後、図示しない高分子接着剤により各磁石45
a、45bを素子本体44に固定した。これら磁石45a、45bの
固定にあたっては、前記流路43、44に垂直に固定磁界が
印加されると共に前記素子本体42に覆う各磁石45a、45b
先端側の円弧部が前記薄膜ヒータ27の直上に位置するよ
うに配置した。更に、前記リード線38a、38bを検出回路
46に接続して酸素検出装置を製造した(第3図、第4図
図示)。なお、第4図は第3図のX−X線に沿う断面図
である。
Next, disk-shaped barium ferrite magnets 45a and 45b each having a diameter of 7 mm and a thickness of about 3 mm supported by a yoke (not shown) on the front and back sides of the element body 42 are arranged with a gap of about 1.5 mm, and then shown in the figure. 45% each magnet by polymer adhesive
a and 45b were fixed to the element body 44. In fixing these magnets 45a, 45b, a fixed magnetic field is applied vertically to the flow paths 43, 44 and the magnets 45a, 45b that cover the element body 42 are fixed.
It was arranged so that the arc portion on the tip side was located immediately above the thin film heater 27. Further, the lead wires 38a and 38b are connected to a detection circuit.
The device was connected to a device 46 to produce an oxygen detector (FIGS. 3 and 4). FIG. 4 is a cross-sectional view taken along line XX of FIG.

しかして、本実施例1の酸素検出素子は第3図及び第
4図に示すようにV形溝31及び溝32を有するシリコン基
板21とパイレックスガラス板36とを相互に接合して前記
V型溝31に対応する箇所にバイパス流路43、前記溝32に
対応する箇所に流路44が形成され、かつ薄膜ヒータ29が
前記バイパス流路43を横切ると共に前記基板21への凹部
23の形成により該流路43内で基板21及びパイレックスガ
ラス板36に対して非接触状態で配設された構造の素子本
体42と、この素子本体42の流路43、44に垂直に固定磁界
を印加するための2枚の円板状バリウムフェライト磁石
45a、45bと、前記素子本体42の薄膜ヒータ27に端子部28
a、28b、導電性エポキシ樹脂からなるヒータ端子37a、3
7b及びリード線38a、38bを通して接続された検出回路46
とを備えた構造になっている。なお、前記薄膜ヒータ27
はSiO2からなる下地層26、保護膜28により上下面が被覆
されている。このような構成の酸素検出素子の作用を、
以下に第5図及び第6図を参照して説明する。
As shown in FIGS. 3 and 4, the oxygen detecting element of the first embodiment is formed by bonding the silicon substrate 21 having the V-shaped grooves 31 and 32 and the Pyrex glass plate 36 to each other. A bypass flow path 43 is formed at a location corresponding to the groove 31, a flow path 44 is formed at a location corresponding to the groove 32, and the thin film heater 29 traverses the bypass flow path 43 and a concave portion to the substrate 21 is formed.
By forming the element 23, the element body 42 having a structure disposed in a non-contact state with the substrate 21 and the Pyrex glass plate 36 in the channel 43, and a fixed magnetic field perpendicular to the channels 43, 44 of the element body 42 Disc-shaped barium ferrite magnets for applying force
45a, 45b, and a terminal 28 on the thin film heater 27 of the element body 42.
a, 28b, heater terminals 37a, 3 made of conductive epoxy resin
7b and the detection circuit 46 connected through the lead wires 38a and 38b.
It has a structure with The thin film heater 27
The upper and lower surfaces are covered with a base layer 26 made of SiO 2 and a protective film 28. The operation of the oxygen detecting element having such a configuration is described below.
This will be described below with reference to FIGS. 5 and 6.

まず、ガス導入管39から酸素を含まない被検気体をガ
ス導入穴33を通して流路44内に導入すると、流路44が対
称的に形成されているため、導入された気体は第5図の
矢印に示すように上下の流路44、ガス排出穴34を通って
ガス排出管44から排出される。この時、中央のバイパス
流路43両端の圧力差は零になり、気体の流れは生じな
い。
First, when a test gas containing no oxygen is introduced from the gas introduction pipe 39 into the flow path 44 through the gas introduction hole 33, the flow path 44 is formed symmetrically. As shown by arrows, the gas is discharged from the gas discharge pipe 44 through the upper and lower flow paths 44 and the gas discharge holes 34. At this time, the pressure difference between both ends of the central bypass channel 43 becomes zero, and no gas flow occurs.

一方、2枚の磁石45a、45bから素子本体42の流路44に
固定磁界を印加した状態でガス導入管39から酸素を含ま
ない被検気体をガス導入穴33を通して流路44内に導入す
ると、前記流路44に導入された被検気体中の酸素は第6
図に矢印に示すように前記固定磁界により磁界中に引込
み、該磁界が印加された素子本体42の下側の流路44の圧
力が増大する。この状態でバイパス流路43の中央付近に
配置した薄膜ヒータ27を検出回路46によりリード線38
a、38b、リード端子37a、37b及び端子部28a、28bを通し
て一定温度に加熱すると、前記磁界中に引込まれた酸素
は前記薄膜ヒータ27での加熱によって磁化率が急激に減
少して磁界が印加された流路44と薄膜ヒータ27が配置さ
れたバイパス流路43部分の間で気圧差を生じ、同第6図
の点線の矢印に示すように気体中の酸素濃度に応じた流
量の気体の流れがバイパス流路43内で生じる。この時、
前記薄膜ヒータ27はバイパス流路43を横切ると共に該流
路43内でシリコン基板21及びパイレックスガラス36に対
して非接触状態で配設されているため、バイパス流路43
内の被検気体に対する熱伝達効率が著しく向上され、該
薄膜ヒータ27による定温の加熱(50℃以上)によって前
記バイパス流路43内で気体の流れを生じさせることが可
能となる。このようにバイパス流路43内で気体の流れが
生じると、該流路43に配置された薄膜ヒータ27に温度差
を生じ、該ヒータ27の電気抵抗の変化を前記検出回路46
で検出することによって被検気体中の酸素を検出され
る。この場合、前記薄膜ヒータ27はバイパス流路43内に
直接配置されていると共にシリコン基板21及びパイレッ
クスガラス36に対して非接触状態で空気絶縁されている
ため、該薄膜ヒータ27が低温加熱されていても前記気体
の流れにより充分な温度差を生じ、該ヒータ27の電気抵
抗の変化を前記検出回路46により良好に検出でき、被検
気体中の酸素を高感度で検出できる。このような薄膜ヒ
ータによる加熱温度の低減化により消費電力を少なくで
きるため、素子本体のコンパクト化を図ることができ、
しかも乾電池で動作する移動形酸素検出素子も実現でき
る。
On the other hand, when a test gas containing no oxygen is introduced from the gas introduction pipe 39 into the flow path 44 through the gas introduction hole 33 with a fixed magnetic field applied to the flow path 44 of the element body 42 from the two magnets 45a and 45b. The oxygen in the test gas introduced into the flow path 44
As shown by an arrow in the figure, the magnetic field is drawn into the magnetic field by the fixed magnetic field, and the pressure of the flow path 44 below the element body 42 to which the magnetic field is applied increases. In this state, the thin film heater 27 arranged near the center of the bypass passage 43 is connected to the lead wire 38 by the detection circuit 46.
When heated to a constant temperature through the a, 38b, the lead terminals 37a, 37b, and the terminal portions 28a, 28b, the magnetic susceptibility of the oxygen drawn into the magnetic field is rapidly reduced by the heating by the thin film heater 27, and the magnetic field is applied. A pressure difference is generated between the flow path 44 and the bypass flow path 43 in which the thin film heater 27 is disposed, and a gas having a flow rate corresponding to the oxygen concentration in the gas flows as shown by a dotted arrow in FIG. Flow occurs in the bypass channel 43. At this time,
Since the thin film heater 27 crosses the bypass channel 43 and is disposed in a non-contact state with the silicon substrate 21 and the Pyrex glass 36 in the channel 43, the bypass channel 43
The heat transfer efficiency with respect to the gas to be detected in the inside is remarkably improved, and the flow of gas can be generated in the bypass passage 43 by the constant temperature heating (50 ° C. or more) by the thin film heater 27. When the gas flows in the bypass channel 43 in this manner, a temperature difference is generated in the thin film heater 27 disposed in the channel 43, and a change in the electric resistance of the heater 27 is detected by the detection circuit 46.
, Oxygen in the test gas is detected. In this case, since the thin-film heater 27 is disposed directly in the bypass passage 43 and is air-insulated in a non-contact state with respect to the silicon substrate 21 and the Pyrex glass 36, the thin-film heater 27 is heated at a low temperature. However, a sufficient temperature difference is generated by the flow of the gas, and a change in the electric resistance of the heater 27 can be detected well by the detection circuit 46, so that oxygen in the test gas can be detected with high sensitivity. Since the power consumption can be reduced by reducing the heating temperature by such a thin film heater, the element body can be made compact,
In addition, a mobile oxygen detection element that operates on a dry battery can be realized.

事実、本実施例1の酸素検出素子により酸素濃度の異
なる被検気体を素子本体42の流路44内に導入し、円板状
のバリウムフェライト磁石45a、45bから素子本体42の流
路44に磁束密度2500Gの固定磁界を印加し、薄膜ヒータ2
7の加熱温度を50℃、100℃、200℃に設定した時におけ
る検出回路46からの出力電圧(ΔVout)を測定したとこ
ろ、第7図に示す特性図を得た。なお、第7図中のAは
薄膜ヒータ27の加熱温度を50℃に設定した時の特性線、
Bは同加熱温度を100℃に設定した時の同特性線、Cは
同加熱温度を200℃に設定した時の同特性線である。こ
の第7図より、本実施例1の酸素検出素子では薄膜ヒー
タ27の温度を充分に低温にしても被検気体中の酸素を高
感度で検出できることがわかる。
In fact, test gases having different oxygen concentrations are introduced into the flow path 44 of the element main body 42 by the oxygen detection element of the first embodiment, and from the disc-shaped barium ferrite magnets 45a and 45b to the flow path 44 of the element main body 42. Apply a fixed magnetic field of magnetic flux density 2500G,
When the output voltage (ΔVout) from the detection circuit 46 when the heating temperature of 7 was set to 50 ° C., 100 ° C., and 200 ° C. was measured, the characteristic diagram shown in FIG. 7 was obtained. Note that A in FIG. 7 is a characteristic line when the heating temperature of the thin film heater 27 is set to 50 ° C.
B is the same characteristic line when the heating temperature is set to 100 ° C., and C is the same characteristic line when the heating temperature is set to 200 ° C. From FIG. 7, it can be seen that the oxygen detecting element of Example 1 can detect oxygen in the test gas with high sensitivity even when the temperature of the thin film heater 27 is sufficiently low.

従って、本発明によれば薄膜ヒータ27による加熱温度
を低減化しても被検気体中の酸素を高感度で検出できる
ため、駆動時での消費電力を少なくして素子本体42のコ
ンパクト化を図ることができ、しかも乾電池で動作する
移動形酸素検出素子も実現できる。
Therefore, according to the present invention, even if the heating temperature of the thin-film heater 27 is reduced, oxygen in the test gas can be detected with high sensitivity, so that power consumption during driving is reduced and the element body 42 is made compact. In addition, a mobile oxygen detector that operates on a dry battery can be realized.

また、本実施例1の製造方法によればエッチング等の
微細加工技術により素子本体42を作製するため、前述し
た優れた作用を有する酸素検出素子を高精度かつ再現性
よく得ることができる。つまり、かかる構造の酸素検出
素子では気体流路の形状により性能が著しく変動する
が、本発明方法では既述の如く微細加工技術により形成
された薄膜ヒータ27、流路44、バイパス流路43等を有す
る素子本体42を高精度かつ再現性よく作製できるため、
性能のばらつきのない高信頼性の酸素検出素子を得るこ
とができる。
Further, according to the manufacturing method of the first embodiment, since the element main body 42 is manufactured by a fine processing technique such as etching, the oxygen detecting element having the above-described excellent action can be obtained with high accuracy and high reproducibility. In other words, the performance of the oxygen detection element having such a structure varies significantly depending on the shape of the gas flow path. However, in the method of the present invention, as described above, the thin film heater 27, the flow path 44, the bypass flow path 43, etc. Since the element body 42 having the above can be manufactured with high accuracy and high reproducibility,
It is possible to obtain a highly reliable oxygen detection element having no variation in performance.

実施例2 まず、シリコン基板21をドライ酸化及びCVD法により
全面に厚さ2.1μmのSiO2膜24を形成し、更に電子ビー
ム蒸着により厚さ4000ÅのNi膜25を堆積した(第8図
(a)図示)。つづいで、同図(b)に示すようにフォ
トエッチング技術により前記Ni膜25及びSiO2膜を順次パ
ターニングして基板21側からSiO2からなる下地層26及び
薄膜ヒータ27及び該ヒータ27の端子部28a、28bを夫々形
成した。
Example 2 First, a 2.1 μm thick SiO 2 film 24 was formed on the entire surface of a silicon substrate 21 by dry oxidation and CVD, and a 4000 nm thick Ni film 25 was further deposited by electron beam evaporation (FIG. 8 ( a) illustrated). Subsequently, as shown in FIG. 2B, the Ni film 25 and the SiO 2 film are sequentially patterned by a photo-etching technique, and a base layer 26 made of SiO 2, a thin-film heater 27 and terminals of the heater 27 are formed from the substrate 21 side. The portions 28a and 28b were respectively formed.

次いで、CVD法により全面に厚さ2μmのSiO2膜を堆
積した後、フォトエッチング技術によりパターニングし
てて前記薄膜ヒータ27を覆う保護膜29及びこの後の工程
のマスクとなるSiO2パターン30を形成した。つづいて、
SiO2パターン30をマスクとして露出したシリコン基板21
をヒドラジン溶液によりエッチングして薄膜ヒータ27下
を横切るV型溝31及び幅広の溝32を形成した(同図
(c)図示)。
Next, after depositing a 2 μm-thick SiO 2 film on the entire surface by the CVD method, the protective film 29 covering the thin-film heater 27 and the SiO 2 pattern 30 serving as a mask in the subsequent steps are patterned by photo-etching technology. Formed. Then,
Exposed silicon substrate 21 using SiO 2 pattern 30 as a mask
Was etched with a hydrazine solution to form a V-shaped groove 31 and a wide groove 32 crossing under the thin film heater 27 (illustrated in FIG. 3C).

次いで、パイレックスガラス板36をフォトエッチング
技術及び電解放電加工により前記基板21のV形溝31、及
び溝32に対応する箇所にV形溝47、溝48及びガス導入穴
33、ガス排出穴34、配線取出し穴35a、35bを開孔した。
ひきつづき、このパイレックスガラス板36を前記溝32が
形成された基板21のSiO2パターン30上に重ねた後、基板
21及びガラス板36を300℃で加熱し、ガラス板36側に−8
00Vの直流電圧を印加して陽極接合した(同図(d)図
示)。ひきつづき、この接合体を12mm×19mmの寸法にス
クライブした後、前記パイレックスガラス板36の配線取
出し穴35a、35bに導電性エポキシ樹脂を充填して前記端
子部28a、28bと接続されたヒータ端子37a、37bを形成
し、更に該端子37a、37bにリード線38a、38bを埋設、接
続した。更に、ガラス板36上にガス導入管39、ガス排出
管40を該ガラス板36のガス導入穴33、ガス排出穴34に夫
々合致するようにエポキシ樹脂接着剤41により連結して
素子本体42を作製した(同図(e))。かかる工程によ
り作製された素子本体42には、前記基板21及びパイレッ
クスガラス板36のV型溝31、47に対応する箇所にバイパ
ス流路43′、前記溝32、48に対応する箇所に流路44′が
形成され、かつ前記薄膜ヒータ27が前記バイパス流路4
3′を横切ると共に流路43′内で基板21及びパイレック
スガラス板36に対して非接触状態で配設された構造を有
する。
Next, a V-shaped groove 47, a groove 48 and a gas introduction hole are formed on the Pyrex glass plate 36 at locations corresponding to the V-shaped grooves 31 and 32 on the substrate 21 by photo-etching technology and electrolytic discharge machining.
33, a gas exhaust hole 34, and wiring extraction holes 35a and 35b were opened.
Subsequently, after stacking this Pyrex glass plate 36 on the SiO 2 pattern 30 of the substrate 21 in which the groove 32 was formed,
21 and the glass plate 36 are heated at 300 ° C., and −8
A direct current voltage of 00 V was applied to perform anodic bonding (illustration (d) in the same figure). Subsequently, after this joined body was scribed to a size of 12 mm × 19 mm, the wiring terminals 35 a and 35 b of the Pyrex glass plate 36 were filled with a conductive epoxy resin, and the heater terminals 37 a connected to the terminal portions 28 a and 28 b were connected. , 37b, and lead wires 38a, 38b were buried and connected to the terminals 37a, 37b. Further, a gas inlet pipe 39 and a gas outlet pipe 40 are connected on the glass plate 36 with an epoxy resin adhesive 41 so as to match the gas inlet holes 33 and the gas outlet holes 34 of the glass plate 36, respectively, thereby connecting the element body 42. It was produced (FIG. (E)). In the element body 42 manufactured by this process, a bypass channel 43 ′ is provided at a location corresponding to the V-shaped grooves 31, 47 of the substrate 21 and the Pyrex glass plate 36, and a channel is provided at a location corresponding to the grooves 32, 48. 44 'is formed, and the thin film heater 27 is
It has a structure that traverses 3 ′ and is disposed in a non-contact state with the substrate 21 and the Pyrex glass plate 36 in the channel 43 ′.

次いで、前記素子本体42の表裏面側に図示しないヨー
クにより支持された直径7mm、厚さ約3mmの円板状バリウ
ムフェライト磁石45a、45bを夫々約1.5mmの隙間をあけ
て配置した後、図示しない高分子接着剤により各磁石45
a、45bを素子本体44に固定した。これら磁石45a、45bの
固定にあたっては、前記流路43、44に垂直に固定磁界が
印加されると共に前記素子本体42に覆う各磁石45a、45b
先端側の円弧部が前記薄膜ヒータ27の直上に位置するよ
うに配置した。更に、前記リード線38a、38bを検出回路
46に接続して酸素検出装置を製造した(第9図、第10図
図示)。なお、第10図は第9図のX−X線に沿う断面図
である。
Next, disk-shaped barium ferrite magnets 45a and 45b each having a diameter of 7 mm and a thickness of about 3 mm supported by a yoke (not shown) on the front and back sides of the element body 42 are arranged with a gap of about 1.5 mm, and then shown in the figure. 45% each magnet by polymer adhesive
a and 45b were fixed to the element body 44. In fixing these magnets 45a, 45b, a fixed magnetic field is applied vertically to the flow paths 43, 44 and the magnets 45a, 45b that cover the element body 42 are fixed.
It was arranged so that the arc portion on the tip side was located immediately above the thin film heater 27. Further, the lead wires 38a and 38b are connected to a detection circuit.
The device was connected to an oxygen detector (see FIGS. 9 and 10). FIG. 10 is a sectional view taken along line XX of FIG.

このような第9図及び第10図に示す本実施例2の酸素
検出素子によれば、実施例1の酸素検出素子と同様に薄
膜ヒータ27による加熱温度を低減化しても被検気体中の
酸素を高感度で検出できるため、駆動時での消費電力を
少なくして素子本体42のコンパクト化を図ることがで
き、しかも乾電池で動作する移動形酸素検出素子も実現
できる。また、本実施例2の製造方法によれば性能のば
らつきのない高信頼性の酸素検出素子を得ることができ
る。
According to the oxygen detecting element of the second embodiment shown in FIGS. 9 and 10, even if the heating temperature of the thin film heater 27 is reduced similarly to the oxygen detecting element of the first embodiment, Since oxygen can be detected with high sensitivity, power consumption during driving can be reduced and the element body 42 can be made compact, and a mobile oxygen detection element that operates on dry batteries can also be realized. Further, according to the manufacturing method of the second embodiment, it is possible to obtain a highly reliable oxygen detection element having no variation in performance.

実施例3 まず、シリコン基板21をドライ酸化及びCVD法により
全面に厚さ2.1μmのSiO2膜24を形成し、更に電子ビー
ム蒸着により厚さ4000ÅのNi膜25を堆積した(第11図
(a)図示)。つづいて、同図(b)に示すようにフォ
トエッチング技術により前記Ni膜25及びSiO膜24を順次
パターニングして基板21側からSiO2からなる下地層26帯
び薄膜ヒータ27及び該ヒータ27の端子部28a、28bを夫々
形成した。
Example 3 First, a 2.1 μm thick SiO 2 film 24 was formed on the entire surface of a silicon substrate 21 by dry oxidation and CVD, and a 4000 nm thick Ni film 25 was deposited by electron beam evaporation (FIG. 11 ( a) illustrated). Subsequently, as shown in FIG. 2B, the Ni film 25 and the SiO film 24 are sequentially patterned by a photoetching technique, and a base layer 26 made of SiO 2 and a thin film heater 27 and terminals of the heater 27 are formed from the substrate 21 side. The portions 28a and 28b were respectively formed.

次いで、CVD法により全面に厚さ2μmのSiO2膜を堆
積した後、フォトエッチング技術によりパターニングし
てて前記薄膜ヒータ27を覆う保護膜29及びこの後の工程
のマスクとなるSiO2パターン30を形成した。つづいて、
SiO2パターン30をマスクとして露出したシリコン基板21
をヒドラジン溶液によりエッチングして薄膜ヒータ27下
を横切るV型溝31及び幅広の溝32を形成した(同図
(c)図示)。
Next, after depositing a 2 μm-thick SiO 2 film on the entire surface by the CVD method, the protective film 29 covering the thin-film heater 27 and the SiO 2 pattern 30 serving as a mask in the subsequent steps are patterned by photo-etching technology. Formed. Then,
Exposed silicon substrate 21 using SiO 2 pattern 30 as a mask
Was etched with a hydrazine solution to form a V-shaped groove 31 and a wide groove 32 crossing under the thin film heater 27 (illustrated in FIG. 3C).

次いで、パイレックスガラス板36をフォトエッチング
技術及び電解放電加工により前記基板21の薄膜ヒータ及
び端子部28a、28bに対応する箇所に小領域の溝49、前記
基板21の溝部32に対応する箇所に溝48及びガス導入穴3
3、ガス排出穴34、配線取出し穴35a、35bを開孔した。
ひきつづき、このパイレックスガラス板36を前記溝32が
形成された基板21のSiO2パターン30上に重ねた後、基板
21及びガラス板36を300℃で加熱し、ガラス板36側に−8
00Vの直流電圧を印加して陽極接合した(同図(d)図
示)。ひきつづき、この接合体を12mm×19mmの寸法にス
クライブした後、前記パイレックスガラス板36の配線取
出し穴35a、35bに導電性エポキシ樹脂を充填して前記端
子部28a、28bと接続されたヒータ端子37a、37bを形成
し、更に該端子37a、37bにリード線38a、38bを埋設、接
続した。更に、ガラス板36上にガス導入管39、ガス排出
管40を該ガラス板36のガス導入穴33、ガス排出穴34に夫
々合致するようにエポキシ樹脂接着剤41により連結して
素子本体42を作製した(同図(e))。かかる工程によ
り作製された素子本体42には、前記基板21のV型溝31に
対応する箇所にバイパス流路43、前記基板21及びパイレ
ックスガラス板36の溝32、48に対応する箇所に流路44′
が形成され、かつ前記薄膜ヒータ27が前記バイパス流路
43′を横切ると共に流路43′内で基板21及びパイレック
スガラス板36に対して非接触状態で配設された構造を有
する。
Next, the Pyrex glass plate 36 is subjected to photoetching technology and electrolytic discharge machining to form a groove 49 in a small area at a position corresponding to the thin film heater and the terminal portions 28a and 28b of the substrate 21, and a groove at a position corresponding to the groove 32 of the substrate 21. 48 and gas inlet 3
3. The gas discharge hole 34 and the wiring extraction holes 35a and 35b were opened.
Subsequently, after stacking this Pyrex glass plate 36 on the SiO 2 pattern 30 of the substrate 21 in which the groove 32 was formed,
21 and the glass plate 36 are heated at 300 ° C., and −8
A direct current voltage of 00 V was applied to perform anodic bonding (illustration (d) in the same figure). Subsequently, after this joined body was scribed to a size of 12 mm × 19 mm, the wiring terminals 35 a and 35 b of the Pyrex glass plate 36 were filled with a conductive epoxy resin, and the heater terminals 37 a connected to the terminal portions 28 a and 28 b were connected. , 37b, and lead wires 38a, 38b were buried and connected to the terminals 37a, 37b. Further, a gas inlet pipe 39 and a gas outlet pipe 40 are connected on the glass plate 36 with an epoxy resin adhesive 41 so as to match the gas inlet holes 33 and the gas outlet holes 34 of the glass plate 36, respectively, thereby connecting the element body 42. It was produced (FIG. (E)). In the element body 42 manufactured by such a process, a bypass flow path 43 is provided at a location corresponding to the V-shaped groove 31 of the substrate 21, and a flow path is provided at a location corresponding to the grooves 32 and 48 of the substrate 21 and the Pyrex glass plate 36. 44 ′
Is formed, and the thin film heater 27 is connected to the bypass passage.
It has a structure that traverses 43 'and is disposed in a non-contact state with the substrate 21 and the Pyrex glass plate 36 in the flow path 43'.

次いで、前記素子本体42の表裏面側に図示しないヨー
クにより支持された直径7mm、厚さ約3mmの円板状バリウ
ムフェライト磁石45a、45bを夫々約1.5mmの隙間をあけ
て配置した後、図示しない高分子接着剤により各磁石45
a、45bを素子本体44に固定した。これら磁石45a、45bの
固定にあたっては、前記流路43、44に垂直に固定磁界が
印加されると共に前記素子本体42に覆う各磁石45a、45b
先端側の円弧部が前記薄膜ヒータ27の直上に位置するよ
うに配置した。更に、前記リード線38a、38bを検出回路
46に接続して酸素検出装置を製造した(第12図、第13図
図示)。なお、第13図は第12図のX−X線に沿う断面図
である。
Next, disk-shaped barium ferrite magnets 45a and 45b each having a diameter of 7 mm and a thickness of about 3 mm supported by a yoke (not shown) on the front and back sides of the element body 42 are arranged with a gap of about 1.5 mm, and then shown in the figure. 45% each magnet by polymer adhesive
a and 45b were fixed to the element body 44. In fixing these magnets 45a, 45b, a fixed magnetic field is applied vertically to the flow paths 43, 44 and the magnets 45a, 45b that cover the element body 42 are fixed.
It was arranged so that the arc portion on the tip side was located immediately above the thin film heater 27. Further, the lead wires 38a and 38b are connected to a detection circuit.
The device was connected to 46 to produce an oxygen detector (FIGS. 12 and 13). FIG. 13 is a sectional view taken along the line XX of FIG.

このような第12図及び第13図に示す本実施例3の酸素
検出素子によれば、実施例1の酸素検出素子と同様に薄
膜ヒータ27による加熱温度を低減化しても被検気体中の
高感度で検出できるため、駆動時での消費電力を少なく
して素子本体42のコンパクト化を図ることができ、しか
も乾電池で動作する移動形酸素検出素子も実現できる。
また、本実施例3の製造方法によれば性能のばらつきの
ない高信頼性の酸素検出素子を得ることができる。
According to the oxygen detecting element of the third embodiment shown in FIGS. 12 and 13, even if the heating temperature of the thin-film heater 27 is reduced similarly to the oxygen detecting element of the first embodiment, Since the detection can be performed with high sensitivity, the power consumption during driving can be reduced and the element body 42 can be made compact, and a mobile oxygen detection element that operates on a dry battery can also be realized.
Further, according to the manufacturing method of the third embodiment, it is possible to obtain a highly reliable oxygen detection element having no variation in performance.

なお、本発明の酸素検出素子は上記実施例1〜3に示
す構造に限定されず、第14図〜第16図に示す構造にして
もよい。
The oxygen detecting element of the present invention is not limited to the structure shown in the first to third embodiments, and may have a structure shown in FIGS. 14 to 16.

即ち、第14図は素子本体42を示す平面図であり、流路
44を菱形とし、ガス導入管39、ガス排出管40を結ぶ直線
に対して直交する前記流路44の対角線にバイパス流路43
を設けた構造になっている。なお、図中の50は磁石から
流路44に対して垂直に印加された固定磁界を示す。かか
る構造の素子本体42を備えた酸素検出素子においても、
実施例1〜3と同様な優れた性能を有する。
That is, FIG. 14 is a plan view showing the element body 42,
44 is a rhombus, and a bypass flow path 43 is formed on a diagonal line of the flow path 44 orthogonal to a straight line connecting the gas introduction pipe 39 and the gas discharge pipe 40.
Is provided. Note that reference numeral 50 in the drawing denotes a fixed magnetic field applied perpendicularly to the flow path 44 from the magnet. Also in the oxygen detection element including the element body 42 having such a structure,
It has the same excellent performance as in Examples 1 to 3.

第15図は、1本の流路51に薄膜ヒータ27を配置した素
子本体12に示すものである。かかる構成の素子本体42を
備えた酸素検出素子では外部の気体に全く流れがない場
合、実施例1〜3と同様な性能を発揮できる。
FIG. 15 shows the element body 12 in which the thin film heater 27 is arranged in one flow path 51. The oxygen detecting element provided with the element main body 42 having such a configuration can exhibit the same performance as the first to third embodiments when no external gas flows.

第16図は、バイパス流路43に薄膜ヒータ27を配置か
つ、該ヒータ27より気体の流れに対して上流側に該ヒー
タ27と同形状の薄膜抵抗体52を配置した素子本体42を示
すものである。なお、図中の53a、53bは前記薄膜抵抗体
52の端子部である。かかる構成の素子本体を備えた酸素
検出素子によれば、バイパス流路43に導かれた被検気体
の温度が周囲温度の影響により変化しても薄膜ヒータ27
の上流側に配置した該ヒータ27と同形状の薄膜抵抗体52
を測定して温度補償することによって、該被検気体中の
酸素量を精度よく検出できる。事実、かかる酸素検出素
子により薄膜ヒータ27の温度を50℃とした場合、周囲温
度が−10℃〜+30℃に亙って安定した被検気体中の酸素
検出が可能であった。
FIG. 16 shows an element body 42 in which a thin-film heater 27 is arranged in a bypass channel 43 and a thin-film resistor 52 having the same shape as the heater 27 is arranged on the upstream side of the flow of gas from the heater 27. It is. Incidentally, 53a and 53b in the figure are the thin film resistors.
52 terminals. According to the oxygen detection element including the element body having such a configuration, even if the temperature of the test gas guided to the bypass passage 43 changes due to the influence of the ambient temperature, the thin-film heater 27
A thin-film resistor 52 having the same shape as the heater 27 disposed on the upstream side of
By measuring the temperature and compensating the temperature, the amount of oxygen in the test gas can be accurately detected. In fact, when the temperature of the thin-film heater 27 was set to 50 ° C. by such an oxygen detecting element, it was possible to stably detect the oxygen in the test gas at an ambient temperature of −10 ° C. to + 30 ° C.

上記実施例では、流路に垂直に固定磁界を印加する磁
石としてバリウムフェライト磁石を用いたが、他の永久
磁石或いは電磁石を用いてもよい。
In the above embodiment, a barium ferrite magnet is used as the magnet for applying a fixed magnetic field perpendicular to the flow path, but another permanent magnet or electromagnet may be used.

上記実施例では、素子本体の基板としてシリコン基板
とパイレックスガラス板を用いたが、2枚のシリコン基
板の組合わせや2枚のガラス基板の組合わせにより素子
本体を構成してもよい。また、ガラス基板についてはパ
イレックスガラスに限らずバイコールガラス等の他のガ
ラス基板を用いてもよい。
In the above embodiment, a silicon substrate and a Pyrex glass plate are used as the substrate of the element body, but the element body may be constituted by a combination of two silicon substrates or a combination of two glass substrates. Further, the glass substrate is not limited to Pyrex glass, and another glass substrate such as Vycor glass may be used.

[発明の効果] 以上詳述した如く、本発明によれば薄膜ヒータによる
加熱温度を低温化しても充分な感度を得ることが可能
で、かつコンパクト化が可能で工業用、医療用及び民生
用等の各種分野の酸素計測に応用し得る酸素検出素子、
並びにかかる酸素検出素子を高精度かつ再現性よ製造し
得る方法を提供できる。
[Effects of the Invention] As described in detail above, according to the present invention, sufficient sensitivity can be obtained even when the heating temperature of the thin-film heater is lowered, and compactness can be achieved. Oxygen detecting element that can be applied to oxygen measurement in various fields such as
In addition, it is possible to provide a method capable of manufacturing such an oxygen detecting element with high accuracy and reproducibility.

【図面の簡単な説明】[Brief description of the drawings]

第1図(a)〜(g)は本発明の実施例1における素子
本体の作製工程を示す断面図、第2図は第1図(g)の
平面図、第3図は本実施例1で製造された酸素検出素子
を示す平面図、第4図は第3図のX−X線に沿う断面
図、第5図及び第6図は本実施例1の作用を説明するた
めの平面図、第7図は本実施例1の酸素検出素子を用い
て被検気体の酸素を測定した時の薄膜ヒータ温度の設定
温度が50℃、100℃、200℃における気体中の酸素濃度と
検出回路からの出力電圧との関係を示す特性図、第8図
(a)〜(e)は本発明の実施例2における素子本体の
作製工程を示す断面図、第9図は本実施例2で製造され
た酸素検出素子を示す平面図、第10図は第9図のX−X
線に沿う断面図、第11図(a)〜(e)は本発明の実施
例3における素子本体の作製工程を示す断面図、第12図
は本実施例3で製造された酸素検出素子を示す平面図、
第13図は第12図のX−X線に沿う断面図、第14図〜第16
図は夫々本発明の他の実施例を示す素子本体の平面図、
第17図は従来の酸素検出素子を示す断面図、第18図は従
来の他の酸素検出素子を示す概略図である。 21……シリコン基板、27……薄膜ヒータ、31、47……V
型溝、32、48……溝、36……パイレックスガラス板、39
……ガス導入管、40……ガス排出管、42……素子本体、
43、43′……バイパス流路、44、44′……流路、45a、4
5b……バリウムフェライト磁石、46……検出回路、52…
…薄膜抵抗体。
1 (a) to 1 (g) are cross-sectional views showing steps of manufacturing an element main body in Example 1 of the present invention, FIG. 2 is a plan view of FIG. 1 (g), and FIG. FIG. 4 is a cross-sectional view taken along line XX of FIG. 3, and FIGS. 5 and 6 are plan views for explaining the operation of the first embodiment. FIG. 7 shows the oxygen concentration in the gas and the detection circuit when the set temperature of the thin film heater is 50 ° C., 100 ° C., and 200 ° C. when the oxygen of the test gas is measured using the oxygen detecting element of the first embodiment. 8 (a) to 8 (e) are cross-sectional views showing steps of manufacturing an element body according to Embodiment 2 of the present invention, and FIG. FIG. 10 is a plan view showing the oxygen detecting element shown in FIG.
11 (a) to 11 (e) are cross-sectional views showing steps of manufacturing an element body according to the third embodiment of the present invention, and FIG. 12 is a cross-sectional view of the oxygen detecting element manufactured in the third embodiment. Plan view,
FIG. 13 is a sectional view taken along line XX of FIG. 12, and FIGS.
The figure is a plan view of an element body showing another embodiment of the present invention,
FIG. 17 is a sectional view showing a conventional oxygen detecting element, and FIG. 18 is a schematic view showing another conventional oxygen detecting element. 21 silicon substrate, 27 thin film heater, 31, 47 V
Mold groove, 32, 48… Groove, 36… Pyrex glass plate, 39
…… Gas inlet pipe, 40 …… Gas exhaust pipe, 42 …… Element body,
43, 43 '... bypass flow path, 44, 44' ... flow path, 45a, 4
5b Barium ferrite magnet, 46 Detection circuit, 52
... Thin film resistors.

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】被検気体の流路を有し、かつ該流路内にヒ
ータを設けた素子本体と、この本体の流路に垂直な固定
磁界を印加するための磁石とを具備した酸素検出素子に
おいて、前記素子本体は、少なくとも一方に溝を有する
2枚のシリコンもしくはガラスからなる基板を貼り合わ
せて該溝に対応する箇所に流路を形成し、かつ各基板間
に薄膜ヒータを前記流路を横切ると共に該流路内で各基
板に対して非接触状態で配設した構造を有することを特
徴とする酸素検出素子。
An oxygen device comprising: an element main body having a flow path of a test gas and a heater provided in the flow path; and a magnet for applying a fixed magnetic field perpendicular to the flow path of the main body. In the detection element, the element body is formed by laminating two silicon or glass substrates having a groove on at least one side to form a flow path at a position corresponding to the groove, and forming a thin film heater between the substrates. An oxygen detection element having a structure traversing a flow path and disposed in a non-contact state with each substrate in the flow path.
【請求項2】一方のシリコン又はガラスからなる基板表
面に浅い凹部を形成する工程と、この凹部を含む前記基
板全面に金属薄膜を堆積した後、パターニングして前記
凹部内に薄膜ヒータを形成する工程と、前記基板を選択
的にエッチングして前記薄膜ヒータの中央付近下を横切
る溝を形成する工程と、他方のシリコン又はガラスから
なる基板を前記薄膜ヒータが配置された側の前記基板表
面に貼り合せることにより前記溝に対応する箇所に流路
が形成され、かつ各基板間に薄膜ヒータが該流路を横切
ると共に該流路内で各基板に対して非接触状態で配設さ
れた構造の素子本体を作成する工程とを具備したことを
特徴とする酸素検出素子の製造方法。
2. A step of forming a shallow concave portion on the surface of one of the silicon or glass substrates, and depositing a metal thin film on the entire surface of the substrate including the concave portion, followed by patterning to form a thin film heater in the concave portion. And a step of selectively etching the substrate to form a groove crossing below the center of the thin film heater, and placing the other silicon or glass substrate on the substrate surface on the side where the thin film heater is disposed. A structure in which a flow path is formed at a position corresponding to the groove by laminating, and a thin film heater is arranged between the substrates in such a manner that the thin film heater crosses the flow path and is not in contact with each substrate in the flow path. Producing the element main body of the above.
【請求項3】一方のシリコン又はガラスからなる基板表
面に金属薄膜を堆積した後、パターニングして薄膜ヒー
タを形成する工程と、前記基板を選択的にエッチングし
て前記薄膜ヒータの中央付近下を横切る溝を形成する工
程と、予め前記基板の溝に対応する箇所に溝を設けた他
方のシリコン又はガラスからなる基板を前記薄膜ヒータ
が配置された側の前記基板表面に貼り合せることにより
前記各基板の溝に対応する箇所に流路が形成され、かつ
各基板間に薄膜ヒータが該流路を横切ると共に該流路内
で各基板に対して非接触状態で配設された構造の素子本
体を作製する工程とを具備したことを特徴とする酸素検
出素子の製造方法。
3. A step of forming a thin film heater by depositing a metal thin film on the surface of one of silicon or glass substrates and patterning the thin film heater, and selectively etching the substrate to form a lower portion near the center of the thin film heater. Forming a crossing groove, and bonding the other silicon or glass substrate having a groove in a location corresponding to the groove of the substrate in advance to the substrate surface on the side where the thin film heater is disposed. An element body having a structure in which a flow path is formed at a position corresponding to a groove of a substrate, and a thin film heater is interposed between the substrates and disposed in a non-contact state with each substrate in the flow path. A method of manufacturing an oxygen detection element.
JP19546188A 1988-08-05 1988-08-05 Oxygen detecting element and method for manufacturing the same Expired - Lifetime JP2619003B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19546188A JP2619003B2 (en) 1988-08-05 1988-08-05 Oxygen detecting element and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19546188A JP2619003B2 (en) 1988-08-05 1988-08-05 Oxygen detecting element and method for manufacturing the same

Publications (2)

Publication Number Publication Date
JPH0245754A JPH0245754A (en) 1990-02-15
JP2619003B2 true JP2619003B2 (en) 1997-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP19546188A Expired - Lifetime JP2619003B2 (en) 1988-08-05 1988-08-05 Oxygen detecting element and method for manufacturing the same

Country Status (1)

Country Link
JP (1) JP2619003B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3725830C2 (en) * 1986-09-30 2000-03-30 Furukawa Electric Co Ltd Copper-tin alloy for electronic instruments
JPH082592Y2 (en) * 1988-10-27 1996-01-29 横河電機株式会社 Micro system gas sensor
JP2000186931A (en) 1998-12-21 2000-07-04 Murata Mfg Co Ltd Small-sized electronic component and its manufacture, and via hole forming method for the small-sized electronic component
JP7494493B2 (en) * 2020-03-09 2024-06-04 富士電機株式会社 Magnetic Oxygen Analyzer

Also Published As

Publication number Publication date
JPH0245754A (en) 1990-02-15

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