JP2657727B2 - Method for manufacturing soft magnetic thin film - Google Patents
Method for manufacturing soft magnetic thin filmInfo
- Publication number
- JP2657727B2 JP2657727B2 JP34403091A JP34403091A JP2657727B2 JP 2657727 B2 JP2657727 B2 JP 2657727B2 JP 34403091 A JP34403091 A JP 34403091A JP 34403091 A JP34403091 A JP 34403091A JP 2657727 B2 JP2657727 B2 JP 2657727B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- soft magnetic
- magnetic thin
- film
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 85
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 18
- 239000010408 film Substances 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 18
- 238000010030 laminating Methods 0.000 claims description 10
- 230000035699 permeability Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 27
- 239000000758 substrate Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910000859 α-Fe Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910017086 Fe-M Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- -1 T i Inorganic materials 0.000 description 1
- 229910007744 Zr—N Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、異方性を有する軟磁性
薄膜の製造方法に関する。本発明の製造方法により得ら
れた軟磁性薄膜は、ＭＩＧヘッド、薄膜ヘッド、ラミネ
ートヘッド等の磁気ヘッドあるいは薄膜トランス等の磁
気応用素子に用いることができる。The present invention relates to a method for producing a soft magnetic thin film having anisotropy. The soft magnetic thin film obtained by the manufacturing method of the present invention can be used for a magnetic head such as a MIG head, a thin film head, a laminate head, or a magnetic application element such as a thin film transformer.
【０００２】[0002]
【従来の技術】異方性を有する軟磁性薄膜は、従来は一
般に、磁界中での熱処理工程を経て製造されていた。2. Description of the Related Art Soft magnetic thin films having anisotropy have conventionally been generally manufactured through a heat treatment step in a magnetic field.
【０００３】[0003]
【発明が解決しようとする課題】磁界中での熱処理は、
大がかりな設備を必要とし、製造コストが高い。The heat treatment in a magnetic field is as follows.
Requires large-scale equipment and high manufacturing costs.
【０００４】また、縦／横の比が大きい細長いものに対
して、その横幅方向に異方性を誘導する場合には、非常
に大きな磁場（従って膨大なエネルギー）を要するの
で、この点においても製造コストが高くなる。[0004] When anisotropy is induced in the width direction of an elongated object having a large ratio of length / width, a very large magnetic field (accordingly, enormous energy) is required. Manufacturing costs increase.
【０００５】また、異方性を有する軟磁性薄膜を積層す
る場合は、さらに製造コストが高くなる。In the case of laminating soft magnetic thin films having anisotropy, the manufacturing cost is further increased.
【０００６】本発明は、上記従来技術の問題点を解消す
る軟磁性薄膜の製造方法を提供することを目的とする。An object of the present invention is to provide a method of manufacturing a soft magnetic thin film that solves the above-mentioned problems of the prior art.
【０００７】本発明によれば、次の軟磁性薄膜の製造方
法及び積層膜の製造方法により上記目的を達成すること
ができる。According to the present invention, the above object can be achieved by the following method for producing a soft magnetic thin film and a method for producing a laminated film.
【０００８】 積着して薄膜を形成する粒子の発生源
に対し、軟磁性薄膜を形成しようとする薄膜被形成体を
相対的に移動させて、前記粒子を前記薄膜被形成体に積
着させて軟磁性薄膜を形成する製造方法であって、形成
しようとする軟磁性薄膜の面内において高い高周波透磁
率を得ようとする主たる方向に、前記発生源に対し前記
薄膜被形成体を相対的に移動させる軟磁性薄膜の製造方
法。[0008] A thin film forming body on which a soft magnetic thin film is to be formed is moved relatively to a source of particles that form a thin film by stacking, and the particles are stacked on the thin film forming body. A method for forming a soft magnetic thin film, wherein the thin film-formed body is relatively positioned with respect to the source in a main direction in which a high-frequency magnetic permeability is to be obtained in a plane of the soft magnetic thin film to be formed. Method for producing a soft magnetic thin film to be moved to
【０００９】 上記軟磁性薄膜の製造方法により２層
以上の軟磁性薄膜を積層する積層膜の製造方法。[0009] A method of manufacturing a laminated film in which two or more soft magnetic thin films are stacked by the method of manufacturing a soft magnetic thin film.
【００１０】積層膜の製造方法において、異方性の方向
が異なるように２層以上の軟磁性薄膜を積層しても良
く、また、２層以上の軟磁性薄膜を積層して全体として
異方性を示さない積層膜を形成しても良い。In the method of manufacturing a laminated film, two or more soft magnetic thin films may be laminated so that the directions of anisotropy are different. A stacked film having no property may be formed.
【００１１】[0011]
【好適な実施態様】（軟磁性薄膜の製造方法）本発明の
軟磁性薄膜の製造方法には、積着して薄膜を形成する粒
子を薄膜被形成体に積着させて直接軟磁性薄膜を形成す
る方法ばかりでなく、前記粒子を薄膜被形成体に積着さ
せその後熱処理して軟磁性薄膜を形成する方法も含まれ
る。また、前記粒子が薄膜被形成体に積着する際に、雰
囲気中の他の成分を伴って積着して薄膜を形成しても良
い。前記粒子を薄膜被形成体に積着させて薄膜を形成す
る手段としては、例えばスパッタリング法等の気相析着
法がある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS (Method of Producing Soft Magnetic Thin Film) In the method of producing a soft magnetic thin film of the present invention, particles forming a thin film by deposition are deposited on a thin film-formed body to directly form the soft magnetic thin film. In addition to the method of forming the soft magnetic thin film, the method also includes a method of depositing the particles on a thin film member, and then performing a heat treatment to form a soft magnetic thin film. When the particles are deposited on the thin film-formed body, the particles may be deposited with other components in the atmosphere to form a thin film. Means for depositing the particles on the thin film-formed body to form a thin film include, for example, a vapor deposition method such as a sputtering method.
【００１２】積着して薄膜を形成する粒子としては、例
えばその組成がＮｉとＦｅから成るものがある。Particles which form a thin film by deposition are, for example, particles having a composition of Ni and Fe.
【００１３】ＮｉとＦｅから成る粒子は、薄膜被形成体
に積着してＮｉ−Ｆｅ軟磁性薄膜になる。The particles composed of Ni and Fe are deposited on a thin film forming body to form a Ni—Fe soft magnetic thin film.
【００１４】また、Ｆｅ−Ｍ−Ｂ又はＦｅ−Ｂ（但し、
Ｍは、Ｃｏ，Ｒｕ，Ｃｒ，Ｖ，Ｎｉ，Ｍｎ，Ｐｄ，Ｉ
ｒ，及びＰｔのうちの１種以上、Ｂは、Ｚｒ，Ｈｆ，Ｔ
ｉ，Ｎｂ，Ｔａ，Ｍｏ及びＷのうちの１種以上）から成
る粒子の場合、雰囲気中に窒素を含有させるとＦｅ−Ｍ
−Ｂ−Ｎ又はＦｅ−Ｂ−Ｎ非晶質薄膜を形成でき、これ
らの非晶質薄膜を例えば３５０〜５５０℃で熱処理する
ことにより軟磁性薄膜を形成できるので、前記非晶質薄
膜の形成時に薄膜被形成体を前記発生源に対し前記特定
方向に相対的に移動させる。Further, Fe-MB or Fe-B (however,
M is Co, Ru, Cr, V, Ni, Mn, Pd, I
r and Pt, B is Zr, Hf, T
i, Nb, Ta, Mo, and W), when nitrogen is contained in the atmosphere, Fe-M
-BN or Fe-BN amorphous thin film can be formed, and a soft magnetic thin film can be formed by heat-treating these amorphous thin films at, for example, 350 to 550 ° C. At times, the thin film member is moved relative to the source in the specific direction.
【００１５】前記非晶質薄膜をスパッタリング法で形成
する場合には、好ましくは、熱処理後の軟磁性薄膜が下
記の組成範囲内になるように、ターゲット組成、雰囲
気、熱処理時間等を設定する。When the amorphous thin film is formed by a sputtering method, the target composition, atmosphere, heat treatment time and the like are preferably set so that the soft magnetic thin film after heat treatment falls within the following composition range.
【００１６】Ｆｅa-mＭmＢbＮc （ここでＭは、Ｃｏ，Ｒｕ，Ｃｒ，Ｖ，Ｎｉ，Ｍｎ，Ｐ
ｄ，Ｉｒ，Ｐｔのうちの１種以上であり、Ｂは、Ｚｒ，
Ｈｆ，Ｔｉ，Ｎｂ，Ｔａ，Ｍｏ，Ｗのうちの１種以上で
ある。） ０≦ｍ／ａ＜０．３ ０＜ｂ≦２０ ０＜ｃ≦２２ （但し、ｂ≦７．５かつｃ≦５を除く）[0016] Fe am M m B b N c ( where M is, Co, Ru, Cr, V , Ni, Mn, P
d, Ir, or Pt, and B is Zr,
One or more of Hf, Ti, Nb, Ta, Mo, and W. 0 ≦ m / a <0.3 0 <b ≦ 200 0 <c ≦ 22 (excluding b ≦ 7.5 and c ≦ 5)
【００１７】薄膜被形成体は、軟磁性薄膜を形成しよう
とするものであり、例えば板状のものを用いることがで
きる。好ましくは平坦面を有するものにする。The thin film forming object is for forming a soft magnetic thin film, and for example, a plate-shaped one can be used. Preferably, it has a flat surface.
【００１８】発生源は、薄膜被形成体に積着して薄膜を
形成する粒子が発生するものである。例えば、スパッタ
リング法におけるターゲットがある。発生源は、２以上
設けても良く、好ましくは互いに他の発生源に干渉しな
いように設ける。例えば、発生源間に、所定の距離をお
いたり、あるいは仕切り板を設ける。The source is a particle that generates particles that form a thin film by being deposited on the thin film-formed body. For example, there is a target in a sputtering method. Two or more sources may be provided, and are preferably provided so as not to interfere with each other. For example, a predetermined distance or a partition plate is provided between the sources.
【００１９】発生源に対し薄膜被形成体を相対的に移動
させる手段としては、例えば、静止した発生源から発生
した粒子の移動領域内において、前記粒子の移動方向に
直交する方向に薄膜被形成体を移動させることが挙げら
れ、この場合には、この被形成体移動方向と平行な薄膜
被形成体の面上に薄膜を積着させることができる。前記
薄膜被形成体の移動は、直線ないし略直線上の移動のみ
ならず、円、楕円等の軌道ないしこれらに近い軌道上の
移動も含む。As means for relatively moving the thin film-formed body with respect to the source, for example, in a moving region of particles generated from a stationary source, the thin film-formed body is formed in a direction orthogonal to the moving direction of the particles. In this case, the thin film can be deposited on the surface of the thin film object parallel to the moving direction of the object. The movement of the thin film member includes not only movement on a straight line or substantially a straight line, but also movement on a trajectory such as a circle or an ellipse or a trajectory close thereto.
【００２０】（積層膜の製造方法）本発明の積層膜の製
造方法は、前記軟磁性薄膜の製造方法により２層以上の
軟磁性薄膜を積層するものである。軟磁性薄膜間には必
要に応じ本発明以外の製膜方法による薄膜（好ましくは
軟磁性を有する薄膜）を積層しても良い。(Method for Producing a Laminated Film) In the method for producing a laminated film of the present invention, two or more soft magnetic thin films are laminated by the method for producing a soft magnetic thin film. If necessary, thin films (preferably thin films having soft magnetism) may be laminated between the soft magnetic thin films by a film forming method other than the present invention.
【００２１】積層される軟磁性薄膜は、その組成、膜厚
あるいは異方性の方向が他の軟磁性薄膜とは異なるよう
にすることができ、さらには、積層膜全体として異方性
を有しないように異方性を有する軟磁性薄膜を複数積層
することもできる。このような異方性を有しない積層膜
は、ラミネートヘッドのコアとして適用できる。The soft magnetic thin film to be laminated can have a different composition, thickness, or direction of anisotropy from the other soft magnetic thin films. A plurality of soft magnetic thin films having anisotropy may be laminated so as not to cause the anomaly. Such a laminated film having no anisotropy can be applied as a core of a laminating head.
【００２２】[0022]
【実施例】（実施例１）ＲＦスパッタ装置（日電アネル
バ製ＳＰＦ−５３０Ｈ）により、Ｆｅ90Ｚｒ10の組成
（ａｔ％）の直径６インチのターゲット（コンベンショ
ナルカソード）を用い、基板ホルダー温度１８℃、６モ
ル％のＮ2を含む窒素含有アルゴンガス雰囲気、圧力
０．１５Ｐａ、投入高周波電力１０００Ｗの条件で、４
１０ｍｍ径のサブストレートホルダー上に配置した、２
インチ径の非磁性フェライト基板上に膜厚７．８μｍの
Ｆｅ−Ｚｒ−Ｎ非晶質膜を製膜した。(Example 1) Substrate holder temperature 18 ° C. using a target (conventional cathode) having a composition (at%) of Fe 90 Zr 10 and a diameter of 6 inches using an RF sputtering apparatus (SPF-530H manufactured by Nidec Anelva). Under a nitrogen-containing argon gas atmosphere containing 6 mol% of N 2 , a pressure of 0.15 Pa, and a supplied high-frequency power of 1000 W.
2 placed on a 10 mm diameter substrate holder
An Fe-Zr-N amorphous film having a thickness of 7.8 μm was formed on a nonmagnetic ferrite substrate having an inch diameter.
【００２３】使用したＲＦスパッタ装置の概略を図１に
示す。サブストレート（基板）ホルダー１は、軸１Ａを
有し、その軸を中心として矢印の方向に自転する。カソ
ード３は、ターゲットと一体化したコンベンショナルカ
ソードであり、３つのカソードの各々は前記軸１Ａの延
長線からほぼ等しい距離をおいて固定されている。前記
基板２は、サブストレートホルダーがカソードと対向す
る面側に固定され、薄膜を形成しようとする面をカソー
ド３に対向させている。カソード３のサブストレートホ
ルダーと対向する面と、前記基板の薄膜を形成しようと
する面とは略平行である。サブストレートホルダーの自
転により、基板は円軌道上を移動する。なお、基板とタ
ーゲット（カソード）間の距離を７０ｍｍ、サブストレ
ートホルダー回転速度を４ｒｐｍに設定した。FIG. 1 schematically shows the RF sputtering apparatus used. The substrate (substrate) holder 1 has an axis 1A, and rotates on the axis in the direction of the arrow. The cathode 3 is a conventional cathode integrated with the target, and each of the three cathodes is fixed at substantially the same distance from an extension of the shaft 1A. The substrate 2 has a substrate holder fixed to a surface facing the cathode, and a surface on which a thin film is to be formed faces the cathode 3. The surface of the cathode 3 facing the substrate holder is substantially parallel to the surface of the substrate on which the thin film is to be formed. The substrate moves on a circular orbit by the rotation of the substrate holder. The distance between the substrate and the target (cathode) was set to 70 mm, and the rotation speed of the substrate holder was set to 4 rpm.
【００２４】上述のようにして得られた膜を、無磁界
中、１０ＴｏｒｒＮ2雰囲気中で、５５０℃で４時間熱
処理したところ、サブストレートホルダーの半径方向に
対応する方向を容易軸とする異方性磁界約２Ｏｅの軟磁
性膜を得た。When the film obtained as described above was heat-treated at 550 ° C. for 4 hours in a 10 Torr N 2 atmosphere without a magnetic field, an anisotropic film having an easy axis in the direction corresponding to the radial direction of the substrate holder was obtained. A soft magnetic film having an ionic magnetic field of about 2 Oe was obtained.
【００２５】得られた軟磁性膜のＢＨ特性を図２に示
す。FIG. 2 shows the BH characteristics of the obtained soft magnetic film.
【００２６】図２の上欄（ａ）が容易軸方向（サブスト
レートホルダー半径方向に対応）、下欄（ｂ）が困難軸
方向（サブストレートホルダーの円周方向に対応）を示
しており、反磁界補正は、行なっていない。反磁界補正
を行ない、困難軸方向の特性から異方性磁界を読むと、
１．９［Ｏｅ］と求まった。この膜の透磁率の周波数特
性を図３に示す。図２〜図３により、得られた軟磁性膜
は良好な一軸異方性を示すことがわかる。The upper column (a) of FIG. 2 shows the easy axis direction (corresponding to the radial direction of the substrate holder), and the lower column (b) shows the hard axis direction (corresponding to the circumferential direction of the substrate holder). No demagnetization correction was performed. When the demagnetizing field is corrected and the anisotropic magnetic field is read from the characteristics in the hard axis direction,
It was determined to be 1.9 [Oe]. FIG. 3 shows the frequency characteristics of the magnetic permeability of this film. 2 and 3 show that the obtained soft magnetic film shows good uniaxial anisotropy.
【００２７】本発明の軟磁性薄膜の製造方法により特定
の方向に異方性を有する軟磁性薄膜を形成して、ＭＩＧ
ヘッド、薄膜磁気ヘッド及びラミネートヘッドを製造す
ることができる。A soft magnetic thin film having anisotropy in a specific direction is formed by the method of manufacturing a soft magnetic thin film of the present invention,
Heads, thin-film magnetic heads and laminate heads can be manufactured.
【００２８】以下、図面により説明する。Hereinafter, description will be made with reference to the drawings.
【００２９】（実施例２） ＭＩＧヘッド 図４は、ＭＩＧヘッドの先端拡大斜視図であり、図５
は、図４のＭＩＧヘッドの矢視Ａ拡大図（記録媒体指向
面拡大図）である。Embodiment 2 MIG Head FIG. 4 is an enlarged perspective view of the tip of the MIG head, and FIG.
FIG. 5 is an enlarged view of the MIG head of FIG.
【００３０】フェライトコア１は、先端対向面１ａ，１
ａ’及び該対向面から後退して形成される凹所１ｂ，１
ｂ’を有し、所定の位置（図示せず）で結合し一体にな
っている。フェライトコアの先端対向面１ａ，１ａ’及
び該対向面から後退して形成される凹所１ｂ，１ｂ’
は、軟磁性層２，２’及びＳｉＯ2層３，３’を順次備
えている。軟磁性層２，２’は磁気ヘッドのコアの一部
を形成している。前記フェライトコア１の先端対向面１
ａと１ａ’間に存在する軟磁性層部分は、互いに対向し
ており、この軟磁性層対向面間にギャップが構成されて
いる。前記フェライトコアの凹所ないしエッジ部に前記
軟磁性層を介して備えられたＳｉＯ2層部分は、ガラス
充填部５，５’と結合している。The ferrite core 1 has a front end facing surface 1a, 1
a ′ and recesses 1b, 1 formed to recede from the facing surface
b ′, and are connected and integrated at a predetermined position (not shown). Opposing surfaces 1a, 1a 'of the ferrite core and recesses 1b, 1b' formed to recede from the opposing surfaces.
It is successively provided with a soft magnetic layer 2, 2 'and the SiO 2 layer 3,3'. The soft magnetic layers 2, 2 'form part of the core of the magnetic head. Front end surface 1 of ferrite core 1
The soft magnetic layer portions existing between a and 1a 'face each other, and a gap is formed between the soft magnetic layer facing surfaces. The SiO 2 layer portion provided on the concave portion or the edge portion of the ferrite core via the soft magnetic layer is connected to the glass filling portions 5, 5 ′.
【００３１】前記軟磁性層は、本発明の軟磁性薄膜の製
造方法により形成されるものであり、トラック幅方向に
容易軸を有する。The soft magnetic layer is formed by the method of manufacturing a soft magnetic thin film of the present invention, and has an easy axis in the track width direction.
【００３２】（実施例３） 薄膜磁気ヘッド 図６は、薄膜磁気ヘッドのギャップデプス方向（記録媒
体指向面に対して垂直方向）の概略拡大断面図であり、
以下この図に基づいて説明する。Embodiment 3 Thin-Film Magnetic Head FIG. 6 is a schematic enlarged cross-sectional view of the thin-film magnetic head in the gap depth direction (perpendicular to the recording medium directing surface).
Hereinafter, description will be made with reference to FIG.
【００３３】フェライト基板１０は、下部軟磁性層１
１，絶縁層１２，コイル導体層１３及び上部軟磁性層１
５を順次有する。前記下部軟磁性層１１と上部軟磁性層
１５の間には、ヘッドの記録媒体指向面２０に達する磁
気ギャップ層１４が存在する。上部軟磁性層１５のもう
一方の面には、軟磁性層を保護するための保護層１６が
設けられている。保護層１６は、接合ガラス層１８によ
り保護板１９と接合している。The ferrite substrate 10 has a lower soft magnetic layer 1
1, insulating layer 12, coil conductor layer 13, and upper soft magnetic layer 1
5 in sequence. Between the lower soft magnetic layer 11 and the upper soft magnetic layer 15, there is a magnetic gap layer 14 reaching the recording medium directing surface 20 of the head. On the other surface of the upper soft magnetic layer 15, a protective layer 16 for protecting the soft magnetic layer is provided. The protective layer 16 is bonded to the protective plate 19 by a bonding glass layer 18.
【００３４】前記上部軟磁性層及び下部軟磁性層は、本
発明の軟磁性薄膜の製造方法により形成され、トラック
幅方向（図６が描かれた面に対して垂直方向）に容易軸
を有する。The upper soft magnetic layer and the lower soft magnetic layer are formed by the method for manufacturing a soft magnetic thin film of the present invention, and have an easy axis in the track width direction (perpendicular to the plane in which FIG. 6 is drawn). .
【００３５】（実施例４） ラミネートヘッド 図７は、ラミネートヘッドの先端拡大斜視図である。図
８は、前記ラミネートヘッドの記録媒体指向面（矢視
Ａ）概略拡大図である。(Embodiment 4) Laminating head FIG. 7 is an enlarged perspective view of the tip of the laminating head. FIG. 8 is a schematic enlarged view of a recording medium directing surface (viewed from an arrow A) of the laminating head.
【００３６】磁気ヘッドコア３３は、軟磁性層３１とＳ
ｉＯ2等の絶縁層３２を交互に積層して成り、先端対向
面３３ａ，３３ａ′及び該対向面から後退して形成され
る凹所３３ｂ，３３ｂ′を有する。前記対向面には、軟
磁性層の端面が露出する。即ち、前記対向面の大部分は
軟磁性層の端面で構成されている。ＳｉＯ2からなるギ
ャップ層Ｇは、前記対向面間に形成されている。磁気ヘ
ッドコア３３の側面は、非磁性基板３４〜３７と結合し
ている。充填ガラス部３８は、非磁性基板３４と３６の
間に充填され、磁気ヘッド全体の接合強度を増大させて
いる。The magnetic head core 33 includes the soft magnetic layer 31 and the S
It comprises an insulating layer 32 of iO 2 or the like are alternately stacked, the tip facing surface 33a, 33a 'and recesses 33b that are formed set back from the facing surface, 33b' has a. An end surface of the soft magnetic layer is exposed at the facing surface. That is, most of the opposing surface is constituted by the end surface of the soft magnetic layer. The gap layer G made of SiO 2 is formed between the facing surfaces. The side surface of the magnetic head core 33 is connected to the non-magnetic substrates 34 to 37. The filling glass portion 38 is filled between the nonmagnetic substrates 34 and 36 to increase the bonding strength of the entire magnetic head.
【００３７】前記軟磁性層３１の各々は、本発明の方法
により形成されたものであり、トラック幅方向に容易軸
を有しているが、積層膜全体としては異方性を有さない
ように積層されている。Each of the soft magnetic layers 31 is formed by the method of the present invention and has an easy axis in the track width direction, but does not have anisotropy as a whole of the laminated film. Are laminated.
【００３８】このラミネートヘッドによれば、異方性を
有さない軟磁性層の積層により形成したラミネートヘッ
ドに比べ、高周波での透磁率の低下を防止できる。According to this laminating head, a decrease in magnetic permeability at high frequencies can be prevented as compared with a laminating head formed by laminating soft magnetic layers having no anisotropy.
【００３９】[0039]
【発明の効果】本発明の軟磁性薄膜の製造方法は、積着
して薄膜を形成する粒子の発生源に対し、軟磁性薄膜を
形成しようとする薄膜被形成体を相対的に移動させて、
前記粒子を前記薄膜被形成体に積着させて軟磁性薄膜を
形成する製造方法であって、形成しようとする軟磁性薄
膜の面内において高い高周波透磁率を得ようとする主た
る方向に、前記発生源に対し前記薄膜被形成体を相対的
に移動させる、という方法である。According to the method of manufacturing a soft magnetic thin film of the present invention, a thin film-forming object on which a soft magnetic thin film is to be formed is relatively moved with respect to a source of particles for forming a thin film by deposition. ,
A manufacturing method for forming a soft magnetic thin film by depositing the particles on the thin film-formed body, wherein the main direction is to obtain a high-frequency magnetic permeability in the plane of the soft magnetic thin film to be formed, This is a method of relatively moving the thin film member with respect to the generation source.
【００４０】従って前記移動方向に対して直交する方向
の薄膜形成面内に異方性を有する軟磁性薄膜を簡単に製
造することができ、その製造コストも極めて安価であ
る。Accordingly, a soft magnetic thin film having anisotropy can be easily manufactured in the thin film forming surface in a direction perpendicular to the moving direction, and the manufacturing cost is extremely low.
【００４１】また、前記移動方向を設定するだけで異方
性の方向を簡単に定めて軟磁性薄膜を製造することがで
き、製造時において工程の管理が簡単である。Further, the soft magnetic thin film can be manufactured by simply determining the anisotropic direction only by setting the moving direction, and the management of the process during the manufacturing is easy.
【００４２】本発明の積層膜の製造方法は、前記本発明
の軟磁性薄膜の製造方法により２層以上の軟磁性薄膜を
積層するので、磁界中の熱処理を必須とすることなく、
簡単にかつ安価に積層膜を形成することができる。According to the method of manufacturing a laminated film of the present invention, two or more soft magnetic thin films are laminated by the method of manufacturing a soft magnetic thin film of the present invention, so that heat treatment in a magnetic field is not essential.
A laminated film can be formed easily and inexpensively.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の方法に使用できるＲＦスパッタ装置の
概略図。FIG. 1 is a schematic diagram of an RF sputtering apparatus that can be used in the method of the present invention.
【図２】本発明の実施例１により得られた軟磁性薄膜の
ＢＨ特性を示す図であり、（ａ）はサブストレートホル
ダーの半径方向のＢＨ特性であり、（ｂ）はサブストレ
ートホルダーの円周方向のＢＨ特性である。2A and 2B are diagrams showing BH characteristics of a soft magnetic thin film obtained according to Example 1 of the present invention, wherein FIG. 2A shows BH characteristics in a radial direction of a substrate holder, and FIG. This is the BH characteristic in the circumferential direction.
【図３】本発明の方法により得られた軟磁性薄膜の透磁
率の周波数特性を示す図。FIG. 3 is a graph showing frequency characteristics of magnetic permeability of a soft magnetic thin film obtained by the method of the present invention.
【図４】ＭＩＧヘッドの先端拡大斜視図。FIG. 4 is an enlarged perspective view of the tip of the MIG head.
【図５】図４のＭＩＧヘッドの矢視Ａ拡大図。FIG. 5 is an enlarged view of the MIG head of FIG.
【図６】薄膜磁気ヘッドのギャップデプス方向の概略拡
大断面図。FIG. 6 is a schematic enlarged sectional view of a thin-film magnetic head in a gap depth direction.
【図７】ラミネートヘッドの先端拡大斜視図。FIG. 7 is an enlarged perspective view of the leading end of the laminating head.
【図８】図７のラミネートヘッドの記録媒体指向面（矢
視Ａ）概略拡大図。FIG. 8 is a schematic enlarged view of a recording medium directing surface (in the direction of arrow A) of the laminate head of FIG. 7;
Claims (4)
し、軟磁性薄膜を形成しようとする薄膜被形成体を相対
的に移動させて、前記粒子を前記薄膜被形成体に積着さ
せて軟磁性薄膜を形成する製造方法であって、 形成しようとする軟磁性薄膜の面内において高い高周波
透磁率を得ようとする主たる方向に、前記発生源に対し
前記薄膜被形成体を相対的に移動させることを特徴とす
る軟磁性薄膜の製造方法。1. A thin film forming body on which a soft magnetic thin film is to be formed is relatively moved with respect to a source of particles that form a thin film by stacking, and the particles are stacked on the thin film forming body. A method of forming a soft magnetic thin film by attaching the thin film-formed body to the source in a main direction in which a high-frequency magnetic permeability is to be obtained in a plane of the soft magnetic thin film to be formed. A method for producing a soft magnetic thin film, characterized by relatively moving.
り２層以上の軟磁性薄膜を積層することを特徴とする積
層膜の製造方法。2. A method for producing a laminated film, comprising laminating two or more soft magnetic thin films according to the method for producing a soft magnetic thin film according to claim 1.
の軟磁性薄膜を積層することを特徴とする請求項２記載
の積層膜の製造方法。3. The method according to claim 2, wherein the two or more soft magnetic thin films are laminated so that the directions of anisotropy are different.
として異方性を示さない積層膜を形成することを特徴と
する請求項２又は３に記載の積層膜の製造方法。4. The method according to claim 2, wherein the two or more soft magnetic thin films are laminated to form a laminated film which does not exhibit anisotropy as a whole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34403091A JP2657727B2 (en) | 1991-12-03 | 1991-12-03 | Method for manufacturing soft magnetic thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34403091A JP2657727B2 (en) | 1991-12-03 | 1991-12-03 | Method for manufacturing soft magnetic thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05159961A JPH05159961A (en) | 1993-06-25 |
| JP2657727B2 true JP2657727B2 (en) | 1997-09-24 |
Family
ID=18366115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34403091A Expired - Fee Related JP2657727B2 (en) | 1991-12-03 | 1991-12-03 | Method for manufacturing soft magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2657727B2 (en) |
-
1991
- 1991-12-03 JP JP34403091A patent/JP2657727B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05159961A (en) | 1993-06-25 |
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