JP2661382B2 - LSI chip connection method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to connection and mounting of fine electrodes such as LSI chips and electrodes provided on a mounting substrate.

[0002]

2. Description of the Related Art Conventionally, as this type of anisotropic conductive material for electrical connection, an adhesive composition containing conductive particles having a conductive metal thin layer formed on the surface of a polymer material has been used. And the connection is 180 to 200 ° C and 20 to 30
A thermocompression bonding method of about kg / cm ² has been used.

[0003] A conventional mounting method will be described below. FIG.
FIG. 2 is a cross-sectional view of a substrate showing a conventional LSI chip connection method in the order of steps. The connection of this LSI chip is as follows. That is, as shown in FIG. 3A, the LSI chip 1 on which the electrode pads 2 are formed and the substrate 3 having the electrode terminals 4 formed corresponding to the electrode pads 2 are formed by dispersing the conductive particles 9. Face each other via the thermal adhesive resin 11 contained therein. Next, as shown in FIG.
This is performed by pressing the SI chip 1 against the substrate 3 and heating it to soften the thermal adhesive resin 11 and connect the electrode pads 2 and the electrode terminals 4 with the conductive particles 9.

[0004]

According to the above-described conventional connection mounting method, when the number of conductive particles electrically connecting the electrode pad and the electrode terminal increases, the adjacent electrode pad or electrode terminal becomes larger. Short circuit or current leak occurs between them. If the number of conductive particles is reduced in order to avoid this, there has been a problem that the connection resistance increases and varies. In severe cases, there were connection points that became electrically open. In addition, this trend is becoming more and more remarkable with recent increase in connection dimension. In addition, it is extremely difficult to press the LSI chip and the substrate while they are strictly parallel, and the gap between the respective electrode terminals varies, and the number of conductive particles between the respective electrode terminals varies, resulting in poor connection. There was a problem of becoming stable. These phenomena are serious drawbacks that cause device malfunction.

It is an object of the present invention to provide a reproducible, stable,
In addition, it is an object of the present invention to provide a method for connecting an LSI chip capable of high definition.

[0006]

In order to achieve the above object, in a connection mounting method according to the present invention, an electrode pad formed on an LSI chip and an electrode terminal formed on a substrate corresponding to the electrode pad are provided. A method of connecting an LSI chip, wherein the LSI chip or one of the surfaces of the substrate is coated with a solution obtained by dispersing conductive particles in a resin having curing and thermosetting properties by active energy rays,
A step of drying, and a step of applying a resin having curability by active energy rays and thermosetting to one of the substrate surface or the LSI chip to which the solution in which the conductive particles are dispersed is not applied, and drying. A step of removing the adhesive resin on the surface of the LSI chip and the substrate by lithography and development, a step of facing the electrode pads and the electrode terminals, and bringing the semiconductor circuit element and the substrate into close contact with each other; Including.

[0007]

The reproducibility is good, stable, the connection reliability is high, and high definition can be achieved.

[0008]

Next, the present invention will be described with reference to the drawings. FIGS. 1A and 1B show an LSI according to an embodiment of the present invention.
It is sectional drawing which shows the connection method of a chip | tip in a process order. FIG.
FIG. 3 is a sectional view of an LSI chip connected by the method of the present invention. First, as shown in FIG. 1A, an electrode pad 2 is formed on a surface of an LSI chip 1, while an electrode terminal 4 is formed on a substrate 3 corresponding to the electrode pad 2.

In the present invention, as shown in FIG. 1A (b), a resin having both photo-curing and thermo-curing properties is uniformly applied onto the LSI chip 1 using a spinner or the like, and then dried. Next, ultraviolet light 7 exposure is performed by photolithography. At this time, the exposure is performed while shielding the resin layer on the electrode pads 2 from light. As shown in FIG. 1A (c), on the substrate 3,
A solution in which conductive particles are dispersed in a resin having both photocurability and thermosetting properties is uniformly applied by a spinner or the like, and then dried. Next, ultraviolet light 7 exposure is performed by photolithography. At this time, the resin layer of the electrode terminal 4 is exposed.
In Examples, "Pimel" (trade name) manufactured by Asahi Kasei Kogyo Co., Ltd., which is a polyimide precursor having a photosensitive group (negative type), was used. As conductive particles, "Micropearl" (manufactured by Sekisui Fine Chemical Co., Ltd.) (Product name). Next, as shown in (d) of FIG. 1B, development is performed with a developer 10 to remove the LSI chip and the resin layer on the substrate 3 to form a mask pattern. Next, as shown in FIG. 1B (e), the electrode pad 2 and the electrode terminal 4 are opposed to each other.

Next, the LSI chip 1 is placed on the substrate 3 with the electrode pads 2 and the electrode terminals 4 facing each other.
And the electrode terminal 4 are closely adhered. In addition, 10kg /
By applying a load of about ² cm ² and lowering the LSI chip 1 and simultaneously heating it to about 250 ° C., the resin disposed between the LSI chip and the substrate 3 is hardened, and the LSI chip 1 as shown in FIG.
The I chip 1 and the substrate 3 are bonded and fixed.

A photosensitive resin and a thermosetting resin are applied to the substrate 3, and a solution in which conductive particles are dispersed in the photosensitive and thermosetting resin is applied to the LSI chip 1. The connection may be made according to the following.

[0012]

As described above, according to the method for connecting an LSI chip of the present invention, an adhesive layer in which conductive particles are dispersed only between an electrode pad and an electrode terminal is provided by lithography technology, and furthermore, an insulating portion is provided. By lithography technology
Since an adhesive layer containing no conductive particles is provided and connected by thermo-compression bonding, an extremely remarkable effect that high-definition connection can be carried out reliably, easily and reliably is obtained.

[Brief description of the drawings]

FIG. 1A is a sectional view showing a step preceding a step of a method of connecting an LSI chip according to the present invention in the order of steps;

FIG. 1B is a cross-sectional view showing a stage subsequent to the process of the LSI chip connection method according to the present invention in the order of processes.

FIG. 2 is a sectional view of an LSI chip connected by the method of the present invention.

FIG. 3 is a cross-sectional view showing a conventional LSI chip connection method in the order of steps.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 LSI chip 2 Electrode pad 3 Substrate 4 Electrode terminal 5 Photosensitive and thermosetting resin 6 Photomask 7 Ultraviolet 8 Light and thermosetting resin in which conductive particles were dispersed 9 Conductive particles 10 Developer 11 Thermal bonding resin

Claims (1)

(57) [Claims] An LSI chip connection method for connecting an electrode pad formed on an LSI chip and an electrode terminal formed on a substrate corresponding to the electrode pad, wherein
After applying a solution obtained by dispersing conductive particles in a resin having curing and thermosetting by active energy rays on one of the SI chip or the substrate surface, a step of drying, and drying the solution in which the conductive particles are dispersed. A step of applying a resin having curing and thermosetting properties by active energy rays to one of the substrate surface or the LSI chip which has not been applied, followed by drying, and lithography and development of the LSI chip and the adhesive resin on the substrate surface. A method of connecting an LSI chip, comprising: a removing step; a step of facing the electrode pad and an electrode terminal; and closely contacting a semiconductor circuit element with a substrate;