JP2665779B2 - Single crystal pulling device - Google Patents
Single crystal pulling deviceInfo
- Publication number
- JP2665779B2 JP2665779B2 JP23358788A JP23358788A JP2665779B2 JP 2665779 B2 JP2665779 B2 JP 2665779B2 JP 23358788 A JP23358788 A JP 23358788A JP 23358788 A JP23358788 A JP 23358788A JP 2665779 B2 JP2665779 B2 JP 2665779B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- crystal pulling
- double
- pulling apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 230000006837 decompression Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、二重ルツボを備えた単結晶引上げ装置の改
良に関する。Description: FIELD OF THE INVENTION The present invention relates to an improvement in a single crystal pulling apparatus provided with a double crucible.
従来の技術 二重ルツボを備えた従来の単結晶引上げ装置におい
て、外ルツボの内壁の形状はセミフラット型で（ストレ
ート型）である。2. Description of the Related Art In a conventional single crystal pulling apparatus provided with a double crucible, the shape of an inner wall of an outer crucible is a semi-flat type (straight type).
発明が解決しようとする問題点 前述のように外ルツボがセミフラット型の二重ルツボ
においては、長尺の半導体単結晶を育成する場合に、融
液の深さが浅くなると融液への熱伝達が極端に悪化して
結晶の成長を維持するのが困難であった。これは、ヒー
ターがルツボの側面から加熱しており、融液の深さが浅
くなるとロスが多くなるためである。Problems to be Solved by the Invention As described above, in the case of a semi-flat double crucible having an outer crucible, when growing a long semiconductor single crystal, when the depth of the melt becomes shallow, heat is not applied to the melt. Transmission deteriorated extremely and it was difficult to maintain crystal growth. This is because the heater is heating from the side of the crucible, and the loss increases as the depth of the melt decreases.
また、融液の深さが浅くなると内ルツボの内壁から多
結晶が析出し易くなる欠点もある。In addition, there is a disadvantage that when the depth of the melt becomes shallow, polycrystals are easily precipitated from the inner wall of the inner crucible.
発明の目的 前述した従来技術の問題点に鑑み、本発明は単結晶の
育成後半時に内ルツボ内壁からの多結晶の成長を抑制
し、しかも長尺の単結晶の成長を良好に行える単結晶引
上げ装置を提供することを目的とする。SUMMARY OF THE INVENTION In view of the problems of the prior art described above, the present invention suppresses the growth of polycrystals from the inner wall of an inner crucible during the latter half of single crystal growth, and furthermore, pulls a single crystal capable of favorably growing a long single crystal. It is intended to provide a device.
発明の要旨 前述の目的を達成するために、この発明は請求項１に
記載の単結晶引上げ装置を要旨としている。SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a single crystal pulling apparatus according to claim 1.
問題点を解決するための手段 本発明の単結晶引上げ装置は、内ルツボと外ルツボか
らなる二重ルツボを備えた単結晶引上げ装置において、
外ルツボの内壁を上側が開いたテーパ形状にすることを
特徴とする。Means for solving the problems The single crystal pulling apparatus of the present invention is a single crystal pulling apparatus having a double crucible consisting of an inner crucible and an outer crucible,
The inner wall of the outer crucible has a tapered shape with an open upper side.
外ルツボ内壁のテーパーの角度はチャージ量，目的と
する酸素濃度，ドーパントの種類，ホットゾーンのサイ
ズにより最適な値に設定する。The angle of the taper of the inner wall of the outer crucible is set to an optimum value according to the charge amount, the target oxygen concentration, the type of the dopant, and the size of the hot zone.
実施例 以下、図面を参照して本発明の実施例について説明す
る。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図は本発明による半導体引上げ装置の実施例を示
している。FIG. 1 shows an embodiment of a semiconductor pulling apparatus according to the present invention.
単結晶引上げ装置１は減圧容器19を有する。減圧容器
19内には二重ルツボが設けてある。The single crystal pulling apparatus 1 has a decompression vessel 19. Decompression container
Inside 19 is a double crucible.
二重ルツボは外ルツボ９と内ルツボ11から構成され
る。内ルツボ11は石英ガラス製である。外ルツボは石英
ルツボ10と、それを支える黒鉛ルツボ12からなる。The double crucible includes an outer crucible 9 and an inner crucible 11. The inner crucible 11 is made of quartz glass. The outer crucible comprises a quartz crucible 10 and a graphite crucible 12 supporting it.
外ルツボ９の内壁は下部の径が小さくなるように形成
してある。つまり上端が開いたテーパー形状をしてい
る。The inner wall of the outer crucible 9 is formed such that the diameter of the lower portion becomes smaller. That is, it has a tapered shape with an open upper end.
二重ルツボは固定式である。 Double crucibles are fixed.
二重ルツボの外側には、黒鉛製のヒータ14が設けてあ
る。Outside the double crucible, a graphite heater 14 is provided.
ヒータ14のまわりには保温筒16が設けてある。保温筒
例えばSiC多孔体で構成する。A heating cylinder 16 is provided around the heater 14. It is composed of a heat insulating cylinder, for example, a porous SiC body.
二重ルツボの上方には、単結晶の引上げ手段17が設け
てある。引上げ手段17は、シリコンの種結晶18′を矢印
Ｄ方向に回転させながら、矢印Ｃ方向に引上げる。Above the double crucible, a single crystal pulling means 17 is provided. The pulling means 17 pulls up the silicon seed crystal 18 'in the direction of arrow C while rotating it in the direction of arrow D.
この単結晶引上げ装置を用いて、シリコン単結晶の引
上げ実験を行った（実験例）。二重ルツボ内にシリコン
を25kgチャージし、５インチのシリコン単結晶を引上げ
た。そして、長さ450mm以上の単結晶を育成できた場合
に、単結晶収率を可とし、長さが450mmより短い場合に
単結晶収率を不可とした。実験例における単結晶収率と
引上速度の平均値を第１表に示す。Using this single crystal pulling apparatus, a silicon single crystal pulling experiment was performed (experimental example). 25 kg of silicon was charged into the double crucible, and a 5-inch silicon single crystal was pulled. When a single crystal having a length of 450 mm or more could be grown, the single crystal yield was acceptable, and when the length was shorter than 450 mm, the single crystal yield was not acceptable. Table 1 shows the average values of the single crystal yield and the pulling rate in the experimental examples.
他方、比較例として従来の二重ルツボ（外ルツボがス
トレート型）を用いた単結晶引上げ装置を用いて、同じ
条件でシリコン単結晶を引上げた。比較例における単結
晶収率と引上速度の平均値を第１表に示す。On the other hand, as a comparative example, a silicon single crystal was pulled under the same conditions using a single crystal pulling apparatus using a conventional double crucible (the outer crucible was a straight type). Table 1 shows the average values of the single crystal yield and the pulling rate in the comparative example.
第１表より、実験例は比較例にくらべて単結晶収率が
大きく、しかも平均引上速度も大きいことが明らかとな
った。つまり、実験例は比較例とくらべて単結晶の引上
げを効率よく行えることがわかる。From Table 1, it is clear that the experimental example has a higher single crystal yield and a higher average pulling rate than the comparative example. That is, it can be seen that the experimental example can pull up a single crystal more efficiently than the comparative example.
次に第２図を参照して本発明による単結晶引上げ装置
の他の実施例について説明する。Next, another embodiment of the single crystal pulling apparatus according to the present invention will be described with reference to FIG.
単結晶引上げ装置２は減圧容器19を有する。減圧容器
19内には二重ルツボが設けてある。The single crystal pulling apparatus 2 has a decompression vessel 19. Decompression container
Inside 19 is a double crucible.
二重ルツボは外ルツボ９と内ルツボ11から構成され
る。内ルツボ11は、泡体積が２×10-3cm3/cm3以下の透
明な石英ガラスで構成してある。このように内ルツボを
透明にすると、熱が伝わり易くなる。外ルツボは石英ル
ツボ10と、それを支える黒鉛ツボ12からなる。The double crucible includes an outer crucible 9 and an inner crucible 11. The inner crucible 11 is made of transparent quartz glass having a bubble volume of 2 × 10 −3 cm 3 / cm 3 or less. When the inner crucible is made transparent as described above, heat is easily transmitted. The outer crucible comprises a quartz crucible 10 and a graphite crucible 12 supporting it.
外ルツボ９の内壁は下部の径が小さくなるように形成
してある。つまり上端が開いたテーパー形状をしてい
る。The inner wall of the outer crucible 9 is formed such that the diameter of the lower portion becomes smaller. That is, it has a tapered shape with an open upper end.
二重ルツボは矢印Ｂ方向に回転可能であり、矢印Ａ方
向に上下移動可能である。The double crucible is rotatable in the direction of arrow B and is movable up and down in the direction of arrow A.
二重ルツボの外側には、黒鉛製のヒータ14が設けてあ
る。ヒータ14の内面はテーパ面になっている。このよう
にヒータの発熱分布を調製することにより、より良い結
果が得られる。Outside the double crucible, a graphite heater 14 is provided. The inner surface of the heater 14 is a tapered surface. By adjusting the heat generation distribution of the heater in this way, better results can be obtained.
ヒータ14のまわりには保温筒16が設けてある。保温筒
16は例えばSiC多孔体で構成する。A heating cylinder 16 is provided around the heater 14. Insulation tube
16 is made of, for example, a SiC porous body.
二重ルツボの上方には、単結晶の引上げ手段17が設け
てある。引上げ手段は種結晶18′を矢印Ｄ方向に回転さ
せながら、矢印Ｃ方向に引上げる。Above the double crucible, a single crystal pulling means 17 is provided. The pulling means pulls up the seed crystal 18 'in the direction of arrow C while rotating the seed crystal 18' in the direction of arrow D.
次に、第３図を参照して本発明のさらに他の実施例に
ついて説明する。Next, still another embodiment of the present invention will be described with reference to FIG.
単結晶引上げ装置３においては、二重ルツボの外ルツ
ボ19を構成する黒鉛ルツボ22が前の実施例より厚く作っ
てある。このように、黒鉛ルツボ22の熱容量を大きくす
ることにより、石英ルツボからの熱の放散を防ぐことが
できる。また、黒鉛ルツボの強度が増大し、黒鉛ルツボ
の寿命が伸びるので有利である。In the single crystal pulling apparatus 3, the graphite crucible 22 constituting the outer crucible 19 of the double crucible is made thicker than the previous embodiment. As described above, by increasing the heat capacity of the graphite crucible 22, heat dissipation from the quartz crucible can be prevented. Further, the strength of the graphite crucible is increased, and the life of the graphite crucible is extended, which is advantageous.
本発明は前述の実施例に限定されない。例えば本発明
の単結晶引上げ装置はCZ法ばかりでなくMCZ法に適用し
てもよい。The invention is not limited to the embodiments described above. For example, the single crystal pulling apparatus of the present invention may be applied not only to the CZ method but also to the MCZ method.
発明の効果 本発明の単結晶引上げ装置によれば、単結晶半導体の
収率を向上でき、さらに結晶の成長速度も向上すること
ができる。Effect of the Invention According to the single crystal pulling apparatus of the present invention, the yield of a single crystal semiconductor can be improved, and the crystal growth rate can be improved.
第１図は本発明による単結晶引上げ装置の実施例を示す
概念図、第２図は他の実施例を示す概念図、第３図はさ
らに他の実施例を示す概念図である。 1,2,3……半導体単結晶引上げ装置 ９……外ルツボ 10……石英ルツボ 11……内ルツボ 12,22……黒鉛ルツボ 14……ヒータ 16……保温筒 17……単結晶の引上げ手段 18……シリコン単結晶 19……減圧容器 22……黒鉛ルツボ 24……黒鉛ヒータFIG. 1 is a conceptual diagram showing an embodiment of a single crystal pulling apparatus according to the present invention, FIG. 2 is a conceptual diagram showing another embodiment, and FIG. 3 is a conceptual diagram showing still another embodiment. 1,2,3… Semiconductor single crystal pulling device 9 …… Outer crucible 10 …… Quartz crucible 11 …… Inner crucible 12,22… Graphite crucible 14 …… Heater 16 …… Insulated tube 17 …… Single crystal pulling Means 18: Silicon single crystal 19: Vacuum container 22: Graphite crucible 24: Graphite heater
Claims (1)
備えた単結晶引上げ装置において、外ルツボの内壁を上
側が開いたテーパ形状にすることを特徴とする単結晶引
上げ装置。1. A single crystal pulling apparatus provided with a double crucible comprising an inner crucible and an outer crucible, wherein the inner wall of the outer crucible has a tapered shape with an open upper side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23358788A JP2665779B2 (en) | 1988-09-20 | 1988-09-20 | Single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23358788A JP2665779B2 (en) | 1988-09-20 | 1988-09-20 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0283294A JPH0283294A (en) | 1990-03-23 |
| JP2665779B2 true JP2665779B2 (en) | 1997-10-22 |
Family
ID=16957410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23358788A Expired - Lifetime JP2665779B2 (en) | 1988-09-20 | 1988-09-20 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2665779B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109850905B (en) * | 2019-04-16 | 2020-11-06 | 大连理工大学 | Method and device for improving impurity removal amount of volatile impurities in electron beam melting process |
-
1988
- 1988-09-20 JP JP23358788A patent/JP2665779B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0283294A (en) | 1990-03-23 |
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