JP2668014B2 - Magnetic multilayer film - Google Patents
Magnetic multilayer filmInfo
- Publication number
- JP2668014B2 JP2668014B2 JP5019267A JP1926793A JP2668014B2 JP 2668014 B2 JP2668014 B2 JP 2668014B2 JP 5019267 A JP5019267 A JP 5019267A JP 1926793 A JP1926793 A JP 1926793A JP 2668014 B2 JP2668014 B2 JP 2668014B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thickness
- multilayer film
- impedance
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明はノイズフィルタ用磁性材
料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic material for a noise filter.
【0002】[0002]
【従来の技術】磁性材料の比透磁率μr(f)はμr′
(f)−j・μr″(f)で表され、μr′は実効的な
比透磁率,μr″は損失に対応する。ここでj=(−
1)1/2,fは周波数である。磁性材料を用いたノイズ
フィルタは磁性材料の損失によるノイズ抑制効果を利用
したものである。ノイズフィルタとしては、インピーダ
ンスおよび抵抗が大きいことが要求されるため、ノイズ
フィルタ用磁性材料としては、|μr|およびμr″が
大きいことが必要となる。電磁環境問題では、特にテレ
ビの放送周波数にあたる30〜300MHzのノイズが
問題視されており、この周波数帯で優れたノイズ抑制効
果を持つフィルタの実現が望まれている。従来材料であ
るMn−Znフェライト{μr′(0)=1500}に
おける比透磁率の周波数特性、およびインピーダンスの
周波数特性を図8,図9に示す(上遠野準之助:「電磁
環境工学情報」p.152、H4.6.30発行、号
外、ミマツデータシステム)。図8においては横軸に周
波数、縦軸に比透磁率をとっており、図9においては横
軸に周波数、縦軸にインピーダンスをとってある。|Z
|はインピーダンス、Rは抵抗、XL はリアクタンスで
あり、材料特性値(Ω/m)で表示した。従来材料で
は、μr′(0)が小さく、また周波数の上昇に伴いμ
r′,μr″が減少するため、|Z|,Rはさほど高い
値にはならない。そのため、十分なノイズ抑制効果を得
るには、磁性材料の体積を大きくする必要があり、部品
サイズが大型化するという問題がある。2. Description of the Related Art The relative magnetic permeability μr (f) of a magnetic material is μr ′.
(F) −j · μr ″ (f), where μr ′ corresponds to the effective relative magnetic permeability and μr ″ corresponds to the loss. Where j = (-
1) 1/2 and f are frequencies. A noise filter using a magnetic material utilizes a noise suppression effect due to loss of the magnetic material. Since a noise filter is required to have a large impedance and resistance, a magnetic material for the noise filter needs to have a large | μr | and μr ″. The noise of 30 to 300 MHz is regarded as a problem, and it is desired to realize a filter having an excellent noise suppression effect in this frequency band.Mn-Zn ferrite {μr ′ (0) = 1500} which is a conventional material The frequency characteristics of the relative permeability and the frequency characteristics of the impedance are shown in FIGS. 8 and 9 (Junnosuke Uetano: “Electromagnetic Environment Engineering Information” p. 152, published H4.6.30, extra edition, Mimamatsu Data System). In FIG. 8, the horizontal axis represents frequency, and the vertical axis represents relative magnetic permeability. In FIG. 9, the horizontal axis represents frequency, and the vertical axis represents impedance. | Z
| Impedance, R represents the resistance, X L is the reactance, viewed in the material characteristic value (Ω / m). In the conventional material, μr ′ (0) is small, and as the frequency increases, μr ′ (0) increases.
Since r ′ and μr ″ decrease, | Z |, R do not become so high. Therefore, in order to obtain a sufficient noise suppression effect, it is necessary to increase the volume of the magnetic material, and the component size is large. There is a problem of becoming.
【0003】[0003]
【発明が解決しようとする課題】本発明は上記の欠点を
改善するために提案されたもので、その目的は、従来の
ノイズフィルタ用磁性材料においてインピーダンスおよ
び抵抗が低い点を解決した、高インピーダンス,高抵抗
性を示す磁性多層膜を提供することにある。SUMMARY OF THE INVENTION The present invention has been proposed to solve the above-mentioned drawbacks, and has as its object to solve the problem of the conventional magnetic material for a noise filter, which has a low impedance and low resistance, and has a high impedance. Another object of the present invention is to provide a magnetic multilayer film exhibiting high resistance.
【0004】[0004]
【課題を解決するための手段】上記の課題を解決するた
め、本発明は基板上に、シート状磁性体と、同じくシー
ト状非磁性絶縁体とを交互に積層してなる磁性多層膜に
おいて、前記磁性体の厚さが表皮深さの10分の1から
10倍の厚さであり、かつ前記非磁性絶縁体の厚さが前
記磁性体間の電気的絶縁を保ち得る厚さ以上であること
を最も主要な特徴とする。ここに表皮深さδは δ={2ρm/(2πf・μr’・μ0 )}1/2 (2) ここで、ρmは磁性体の抵抗率、fは周波数、μ0 は真
空の透磁率である。従来の材料とは、材料構成および構
造が異なるものである。According to the present invention, there is provided a magnetic multilayer film comprising a sheet-like magnetic material and a sheet-like non-magnetic insulator alternately laminated on a substrate. The thickness of the magnetic body is 1/10 to 10 times the skin depth, and the thickness of the non-magnetic insulator is equal to or greater than a thickness capable of maintaining electrical insulation between the magnetic bodies. Is the most important feature. Here, the skin depth δ is δ = {2ρm / (2πf · μr ′ · μ 0 )} 1/2 (2) where ρm is the resistivity of the magnetic material, f is the frequency, and μ 0 is the magnetic permeability of the vacuum. It is. The material composition and structure are different from the conventional materials.
【0005】[0005]
【作用】本発明によれば、磁性体の厚さを表皮深さの1
0分の1から10倍とすることによって、渦電流損失に
よるノイズ抑制効果を最大限に利用することができる。According to the present invention, the thickness of the magnetic body is set to one skin depth.
By making the ratio from 1/0 to 10 times, the effect of suppressing noise due to eddy current loss can be used to the maximum.
【0006】[0006]
【実施例】次に本発明の実施例について説明する。図1
は本発明の磁性多層膜の実施例を示す図であって、基板
3上に、シート状磁性体1と、同じくシート状非磁性絶
縁体2とが交互に積層した多層膜構造を成している。磁
性体の厚さは表皮深さの10分の1から10倍の厚さ
に、一方、非磁性絶縁体の厚さは磁性体間の電気的絶縁
を保ち得る厚さ以上に設定されている。Next, an embodiment of the present invention will be described. FIG.
FIG. 1 is a view showing an embodiment of a magnetic multilayer film of the present invention. The magnetic multilayer film has a multilayer structure in which a sheet-like magnetic body 1 and a sheet-like non-magnetic insulator 2 are alternately stacked on a substrate 3. I have. The thickness of the magnetic body is set to be 1/10 to 10 times the skin depth, while the thickness of the non-magnetic insulator is set to a thickness that can maintain electrical insulation between the magnetic bodies. .
【0007】次に具体的実験例を示す。図2に、比透磁
率(μr′,μr″)のtm/δ依存性を示す。図2に
おいて、横軸にtm/δをとり、縦軸に比透磁率をとっ
てある。磁性体としてはμr′(0)=5000,抵抗
率(ρm)=120μΩcmを持つCoZr非晶質合金
を使用した。tmは磁性体厚さ、δは表皮深さである。
δはρm,真空の透磁率μ0 を用いて、 δ=〔2ρm/{2πfμr′(0)μ0 }〕1/2 (1) で表される。μr′,μr″はいずれもμr′(0)で
規格化してある。μr″はtm/δが0.1から10の
範囲で渦電流損失により大きな値となる。このことか
ら、tmをδの10分の1から10倍程度の厚さに設定
することにより、大きなノイズ抑制効果が得られること
がわかる。Next, specific experimental examples will be described. 2 shows the tm / δ dependence of the relative magnetic permeability (μr ′, μr ″). In FIG. 2, the horizontal axis represents tm / δ and the vertical axis represents the relative magnetic permeability. Used a CoZr amorphous alloy having μr ′ (0) = 5000 and resistivity (ρm) = 120 μΩcm, where tm is the thickness of the magnetic material and δ is the skin depth.
δ is expressed as ρ = [2ρm / {2πfμr ′ (0) μ 0 }] 1/2 (1) using ρm and the magnetic permeability μ 0 of vacuum. μr ′ and μr ″ are both normalized by μr ′ (0). μr ″ becomes a large value due to eddy current loss when tm / δ is in the range of 0.1 to 10. From this, it is understood that a large noise suppression effect can be obtained by setting tm to a thickness of about 1/10 to about 10 times δ.
【0008】非磁性絶縁体の厚さが薄い場合、絶縁破壊
などによって磁性体層間に電流が流れ、磁性体層厚は上
記の設定値より見かけ上厚くなり、十分なノイズ抑制効
果を得ることができなくなる。そのため、非磁性絶縁体
の厚さは磁性体間の電気的絶縁を保ち得る厚さ以上に設
定する必要がある。非磁性絶縁体としてSiO2 を使用
した場合の実験結果を以下に示す。図3は比透磁率の周
波数特性を示したものであり、磁性体としては50nm
厚のNiFe合金を使用した。この周波数範囲において
表皮深さδは0.16〜1.6μmであり、NiFe層
厚に比べ十分厚い。従って、SiO2 層がNiFe層間
の電気的絶縁を保っていれば、NiFeの強磁性共鳴周
波数650MHz付近まで、μr′は一定、μr″は低
い値となるはずである。SiO2 層厚5nmでは、30
MHz付近からμr′の低下、μr″の急増が生じ、電
気的絶縁が不完全となっていることがわかる。一方、S
iO2 層厚50nmでは、強磁性共鳴周波数650MH
z付近までμr′は一定、μr″の増加は抑えられ、電
気的絶縁はほぼ保たれていることがわかる。SiO2 層
厚100nmでは絶縁効果は一層、確実となる。以上、
非磁性絶縁体としてSiO2 を使用した場合には、層厚
を数十nm以上とすることにより、磁性体間の電気的絶
縁をほぼ完全に保ち得ることがわかる。When the thickness of the non-magnetic insulator is small, a current flows between the magnetic layers due to dielectric breakdown or the like, and the thickness of the magnetic layer becomes apparently larger than the above set value, so that a sufficient noise suppressing effect can be obtained. become unable. Therefore, it is necessary to set the thickness of the nonmagnetic insulator to a thickness that can maintain electrical insulation between the magnetic bodies. Experimental results when using SiO 2 as the nonmagnetic insulator are shown below. FIG. 3 shows a frequency characteristic of the relative magnetic permeability.
A thick NiFe alloy was used. In this frequency range, the skin depth δ is 0.16 to 1.6 μm, which is sufficiently thicker than the NiFe layer thickness. Therefore, if the SiO 2 layer is only to keep the electrical insulation of the NiFe layers, to the vicinity of the ferromagnetic resonance frequency 650MHz of NiFe, .mu.r 'is constant, .mu.r "is the .SiO 2 layer thickness 5nm should become a low value , 30
It can be seen that μr ′ decreases and μr ″ sharply increases from around MHz, resulting in incomplete electrical insulation.
With an iO 2 layer thickness of 50 nm, the ferromagnetic resonance frequency is 650 MH
It can be seen that μr ′ is constant up to the vicinity of z, the increase in μr ″ is suppressed, and the electrical insulation is almost maintained. With the SiO 2 layer thickness of 100 nm, the insulating effect becomes more reliable.
When SiO 2 is used as the nonmagnetic insulator, it can be seen that the electrical insulation between the magnetic bodies can be almost completely maintained by setting the layer thickness to several tens of nm or more.
【0009】次に磁性体としてμr′(0)=500
0,ρm=120μΩcmを持つCoZrNb非晶質合
金を、非磁性絶縁体としてSiO2 を使用した磁性多層
膜における実験結果を示す。表皮深さδは30〜300
MHzで0.4〜1.4μmである。SiO2 層厚とし
ては、磁性体間の電気的絶縁を保ち得る厚さ0.1μm
に設定した。CoZrNb層厚tmとして、δ/10≦
tm≦10δを満たす2μmに設定した場合の比透磁率
の周波数特性、およびインピーダンスの周波数特性を図
4,図5に示す。図4においては横軸に周波数、縦軸に
比透磁率をとり、図5においては横軸に周波数、縦軸に
インピーダンスをとってある。図8,図9の従来材料に
おける値と比較すると、μr′(0)の値が大きく、ま
た周波数の上昇に伴うμr′,μr″の減少も緩やかで
ある。そのため、30〜300MHzで|μr|,μ
r″が大きな値をとり、|Z|,Rも大きな値となる。
この例では、従来材料に比較し、一桁程度大きな|Z|
の値が得られている。tmをδ/10≦tm≦10δの
範囲外である0.04μm,14μmとして場合のイン
ピーダンスの周波数特性を各々図6,図7に示す。図6
および図7は、いずれも横軸に周波数、縦軸にインピー
ダンスをとってある。tm=0.04μmでは|Z|は
大きいがRが小さく、一方、tm=14μmでは|Z
|,Rとも小さな値となって、ともに十分なノイズ抑制
効果が期待できない。Next, μr ′ (0) = 500 as a magnetic material
Experimental results are shown for a magnetic multilayer film using a CoZrNb amorphous alloy having 0, ρm = 120 μΩcm and SiO 2 as a nonmagnetic insulator. The skin depth δ is 30 to 300
It is 0.4 to 1.4 μm in MHz. The thickness of the SiO 2 layer is 0.1 μm, which can maintain electrical insulation between the magnetic materials.
Set to. As the CoZrNb layer thickness tm, δ / 10 ≦
FIGS. 4 and 5 show the frequency characteristics of relative permeability and impedance when set to 2 μm that satisfies tm ≦ 10δ. In FIG. 4, the horizontal axis represents frequency and the vertical axis represents relative permeability. In FIG. 5, the horizontal axis represents frequency and the vertical axis represents impedance. 8 and 9, the value of μr ′ (0) is large, and the decrease of μr ′ and μr ″ with the increase of the frequency is gradual. Therefore, | μr at 30 to 300 MHz. |, Μ
r "takes a large value, and | Z |, R also take a large value.
In this example, | Z |
Is obtained. The frequency characteristics of impedance when tm is 0.04 μm and 14 μm, which are outside the range of δ / 10 ≦ tm ≦ 10δ, are shown in FIGS. 6 and 7, respectively. FIG.
7 and FIG. 7, the horizontal axis represents frequency, and the vertical axis represents impedance. At tm = 0.04 μm, | Z | is large but R is small, while at tm = 14 μm, | Z
Both | and R have small values, and a sufficient noise suppression effect cannot be expected.
【0010】なお、磁性体としては、Fe,Ni,Co
をベースとした合金系磁性体を、一方、非磁性絶縁体と
しては、SiO2 ,AlN,Al2 O3 ,BN,Ti
N,SiCを各々使用しても上記と同様の効果を得るこ
とができる。以上、本発明による磁性多層膜では、従来
材料に比べ、高インピーダンス,高抵抗性を示すという
改善があった。[0010] The magnetic material may be Fe, Ni, Co.
On the other hand, as a nonmagnetic insulator, SiO 2 , AlN, Al 2 O 3 , BN, Ti
Even if N and SiC are used, the same effect as described above can be obtained. As described above, the magnetic multilayer film according to the present invention has an improvement in that it exhibits higher impedance and higher resistance than the conventional material.
【0011】[0011]
【発明の効果】以上説明したように、本発明による磁性
多層膜は、電磁環境問題において問題視されている数十
MHzから数百MHzの周波数帯域において、インピー
ダンスおよび抵抗が高く、ノイズ抑制効果に優れるとい
う利点がある。従って、本磁性多層膜は、ノイズフィル
タ用磁性材料として有用である。As described above, the magnetic multilayered film according to the present invention has high impedance and resistance in the frequency band of several tens MHz to several hundreds MHz, which is regarded as a problem in the electromagnetic environment, and has a low noise suppressing effect. It has the advantage of being superior. Therefore, the present magnetic multilayer film is useful as a magnetic material for a noise filter.
【図1】本発明の実施例を示す図である。FIG. 1 is a diagram showing an embodiment of the present invention.
【図2】CoZrNbにおける比透磁率の磁性体層厚依
存性を示す図である。FIG. 2 is a diagram showing the dependence of the relative magnetic permeability of CoZrNb on the thickness of a magnetic layer.
【図3】SiO2 厚を変化させた場合の比透磁率の周波
数特性を示す図である。FIG. 3 is a diagram showing frequency characteristics of relative magnetic permeability when the thickness of SiO 2 is changed.
【図4】CoZrNb/SiO2 (2μm/0.1μ
m)多層膜における比透磁率の周波数特性を示す図であ
る。FIG. 4 shows CoZrNb / SiO 2 (2 μm / 0.1 μm)
m) A diagram showing frequency characteristics of relative magnetic permeability in the multilayer film.
【図5】CoZrNb/SiO2 (2μm/0.1μ
m)多層膜におけるインピーダンスの周波数特性を示す
図である。FIG. 5: CoZrNb / SiO 2 (2 μm / 0.1 μm)
m) A diagram showing frequency characteristics of impedance in the multilayer film.
【図6】CoZrNb/SiO2 (0.04μm/0.
1μm)多層膜におけるインピーダンスの周波数特性を
示す図である。FIG. 6 shows CoZrNb / SiO 2 (0.04 μm / 0.
1 μm) is a diagram illustrating frequency characteristics of impedance in a multilayer film.
【図7】CoZrNb/SiO2 (14μm/0.1μ
m)多層膜におけるインピーダンスの周波数特性を示す
図である。FIG. 7: CoZrNb / SiO 2 (14 μm / 0.1 μm)
m) A diagram showing frequency characteristics of impedance in the multilayer film.
【図8】従来材料(Mn−Znフェライト)における比
透磁率の周波数特性を示す図である。FIG. 8 is a diagram showing frequency characteristics of relative permeability in a conventional material (Mn—Zn ferrite).
【図9】従来材料(Mn−Znフェライト)におけるイ
ンピーダンスの周波数特性を示す図である。FIG. 9 is a diagram illustrating frequency characteristics of impedance of a conventional material (Mn—Zn ferrite).
1 磁性体 2 非磁性絶縁体 3 基板 1 magnetic material 2 non-magnetic insulator 3 substrate
Claims (1)
ート状非磁性絶縁体とを交互に積層してなる磁性多層膜
において、前記磁性体の厚さが表皮深さの10分の1か
ら10倍の厚さであり、かつ前記非磁性絶縁体の厚さが
前記磁性体間の電気的絶縁を保ち得る厚さ以上であるこ
とを特徴とする磁性多層膜。1. A magnetic multilayer film comprising a substrate and a sheet-like magnetic material and a sheet-like non-magnetic insulator alternately laminated on a substrate, wherein the thickness of the magnetic material is 1/10 of the skin depth. Wherein the thickness of the non-magnetic insulator is not less than a thickness capable of maintaining electrical insulation between the magnetic bodies.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5019267A JP2668014B2 (en) | 1993-01-11 | 1993-01-11 | Magnetic multilayer film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5019267A JP2668014B2 (en) | 1993-01-11 | 1993-01-11 | Magnetic multilayer film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06208923A JPH06208923A (en) | 1994-07-26 |
| JP2668014B2 true JP2668014B2 (en) | 1997-10-27 |
Family
ID=11994673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5019267A Expired - Lifetime JP2668014B2 (en) | 1993-01-11 | 1993-01-11 | Magnetic multilayer film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2668014B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5248092A (en) * | 1975-10-15 | 1977-04-16 | Hitachi Ltd | Method of wire connection between a flat cable and a connector |
| JPS6187477U (en) * | 1984-11-13 | 1986-06-07 |
-
1993
- 1993-01-11 JP JP5019267A patent/JP2668014B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06208923A (en) | 1994-07-26 |
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