JP2677018B2 - Magnetic multilayer film - Google Patents
Magnetic multilayer filmInfo
- Publication number
- JP2677018B2 JP2677018B2 JP2412922A JP41292290A JP2677018B2 JP 2677018 B2 JP2677018 B2 JP 2677018B2 JP 2412922 A JP2412922 A JP 2412922A JP 41292290 A JP41292290 A JP 41292290A JP 2677018 B2 JP2677018 B2 JP 2677018B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- magnetic thin
- multilayer film
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 81
- 239000010409 thin film Substances 0.000 claims description 44
- 239000010408 film Substances 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 12
- 229910018979 CoPt Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 description 17
- 230000008859 change Effects 0.000 description 15
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000005415 magnetization Effects 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 1Si Inorganic materials 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- 229910034327 TiC Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気抵抗効果素子に好
適な磁性多層膜に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic multilayer film suitable for a magnetoresistive effect element.
【０００２】[0002]
【従来の技術およびその課題】半導体ホ−ル素子、半導
体磁気抵抗効果素子、強磁性磁気抵抗効果素子等の磁電
変換素子が、無接点スイッチや、被測定物の運動を一旦
永久磁石の運動に変えて計測する位置検出器や回転検出
器に利用されている。中でも強磁性磁気抵抗効果を利用
した磁気抵抗効果素子は小さい磁界強度に対しても感度
が良く、また磁束応答型であるので、低速磁界変化でも
精度の高い測定が可能で、また薄膜技術を用いて小さい
サイズに作製できる等の利点を持ち、上記の用途には非
常に適しているため広く利用されている。従来、このよ
うな磁気抵抗効果素子にはＮｉＦｅ合金やＮｉＣｏ合金
の磁性薄膜が用いられており、いわゆる異方性磁気抵抗
効果を利用している。しかし、従来の異方性磁気抵抗効
果を利用した磁性薄膜の磁気抵抗変化率は２〜５％であ
り、さらに磁気抵抗変化率の大きい磁性薄膜が求められ
てきた。2. Description of the Related Art Magnetoelectric conversion elements such as semiconductor hall elements, semiconductor magnetoresistive effect elements, and ferromagnetic magnetoresistive effect elements are used in contactless switches and the movement of an object to be measured once as the movement of a permanent magnet. It is used for position detectors and rotation detectors that change and measure. Among them, the magnetoresistive effect element utilizing the ferromagnetic magnetoresistive effect has high sensitivity to a small magnetic field strength and is a magnetic flux response type, so that it is possible to perform accurate measurement even with a slow magnetic field change, and use thin film technology. It is widely used because it has the advantage that it can be manufactured in a small size and is very suitable for the above-mentioned applications. Conventionally, a magnetic thin film of NiFe alloy or NiCo alloy has been used for such a magnetoresistive effect element, and so-called anisotropic magnetoresistive effect is utilized. However, the magnetic thin film using the conventional anisotropic magnetoresistive effect has a magnetoresistive change rate of 2 to 5%, and a magnetic thin film having a large magnetoresistive change rate has been required.
【０００３】最近、ＮｉＦｅ薄膜とＣｏ薄膜を交互に積
層し、各積層磁性薄膜層間に非磁性薄膜層を介在させた
磁性多層膜において、室温で１０％程度の大きな磁気抵
抗変化率が得られることが発見された（山本他、第１４
回日本応用磁気学会学術講演会）。しかし、この磁性多
層膜は数１０ Oe 以上の外部磁界が加わるとヒステリシ
スを生じ、磁気抵抗効果素子としての動作が不安定であ
るといった問題点があった。本発明はこのような従来の
問題点を解決するためになされたもので、大きな磁気抵
抗効果を安定に得ることのできる磁性多層膜を提供する
ことを目的とする。Recently, a large magnetic resistance change rate of about 10% can be obtained at room temperature in a magnetic multilayer film in which NiFe thin films and Co thin films are alternately laminated and a nonmagnetic thin film layer is interposed between the laminated magnetic thin film layers. Was discovered (Yamamoto et al., No. 14)
Annual Meeting of the Japan Society for Applied Magnetics). However, this magnetic multilayer film has a problem that hysteresis occurs when an external magnetic field of several tens Oe or more is applied, and the operation as a magnetoresistive effect element is unstable. The present invention has been made to solve such conventional problems, and an object thereof is to provide a magnetic multilayer film capable of stably obtaining a large magnetoresistive effect.
【０００４】[0004]
【課題を解決するための手段】本発明は、基体上に保持
力の異なる２種類の磁性薄膜層を交互に積層し、各積層
磁性薄膜層間に非磁性薄膜層を介在させた構造からなる
磁性多層膜において、前記２種類の磁性薄膜層の一方が
ＣｏＰｔを主成分とする材料よりなることを特徴とする
磁性多層膜である。SUMMARY OF THE INVENTION The present invention has a magnetic structure in which two types of magnetic thin film layers having different coercive forces are alternately laminated on a substrate and a non-magnetic thin film layer is interposed between the laminated magnetic thin film layers. In the multilayer film, one of the two types of magnetic thin film layers is made of a material containing CoPt as a main component, which is a magnetic multilayer film.
【０００５】以下、図面を参照して本発明をさらに詳細
に説明する。図１は本発明の磁性多層膜の基本的構成を
示す断面図である。基板１上にＣｏＰｔまたはＣｏＰｔ
を主成分とする合金からなる第１の磁性薄膜層２と該磁
性薄膜層２よりも保磁力の小さい第２の磁性薄膜層３を
交互に積層し、各積層磁性薄膜層間に非磁性薄膜層４を
介在させることによって構成される。図１では基板上に
ＣｏＰｔ系の磁性薄膜層２から積層を開始し、最後が保
磁力の小さい磁性薄膜層３で終わる構成になっている
が、本発明の効果は磁性薄膜層２と３の積層順序にはよ
らない。Hereinafter, the present invention will be described in more detail with reference to the drawings. FIG. 1 is a sectional view showing the basic structure of the magnetic multilayer film of the present invention. CoPt or CoPt on substrate 1
A first magnetic thin film layer 2 made of an alloy containing as a main component and a second magnetic thin film layer 3 having a coercive force smaller than that of the magnetic thin film layer 2 are alternately laminated, and non-magnetic thin film layers are provided between the respective laminated magnetic thin film layers. It is configured by interposing 4. In FIG. 1, the CoPt-based magnetic thin film layer 2 is laminated on the substrate, and the last is finished by the magnetic thin film layer 3 having a small coercive force. It does not depend on the stacking order.
【０００６】本発明に係わる基板１の材料には、ガラ
ス，Ｓｉ，Ａｌ2Ｏ3 ，ＴｉＣ，ＳｉＣ，Ａｌ2Ｏ3 とＴ
ｉＣとの焼結体，フェライト等を用いることができる。
磁性薄膜層２の材料には、ＣｏとＰｔの広い組成範囲か
ら選択できるが、Ｐｔ組成を１０原子％以上，３５原子
％以下とすることによって、特に大きな効果が得られ
る。また、磁性薄膜層３には種々の強磁性材料を用いる
ことができるが、軟磁気特性に優れたＮｉＦｅ，ＦｅＡ
ｌＳｉ，窒化鉄，ＣｏＺｒ等のＣｏ基アモルファス合
金，あるいはこれらに添加物を加えたものが特に適して
いる。これら磁性層の厚さは２００オングストロ―ム以
下、好ましくは １００オングストロ―ム以下とする。
厚さが前記範囲を超えても本発明の効果に向上はみられ
ず、生産性を低下させる。なお、磁性薄膜の厚さの下限
は特にないが、厚さを４オングストロ―ム以上とすれば
膜厚を均一に保つことが容易となり、膜質も良好とな
る。Materials for the substrate 1 according to the present invention include glass, Si, Al 2 O 3 , TiC, SiC, Al 2 O 3 and T.
A sintered body with iC, ferrite, or the like can be used.
The material of the magnetic thin film layer 2 can be selected from a wide composition range of Co and Pt, but a particularly large effect can be obtained by setting the Pt composition to 10 atom% or more and 35 atom% or less. Further, various ferromagnetic materials can be used for the magnetic thin film layer 3, but NiFe and FeA having excellent soft magnetic characteristics can be used.
Co-based amorphous alloys such as 1Si, iron nitride, and CoZr, or those obtained by adding additives to these are particularly suitable. The thickness of these magnetic layers is 200 angstroms or less, preferably 100 angstroms or less.
Even if the thickness exceeds the above range, the effect of the present invention is not improved and the productivity is reduced. There is no particular lower limit to the thickness of the magnetic thin film, but if the thickness is 4 angstroms or more, it becomes easy to keep the film thickness uniform and the film quality becomes good.
【０００７】また、本発明に係わる非磁性薄膜層４は磁
性薄膜層２と３の磁気相互作用を弱める役割を果たす導
電材料で、具体的にはＡｕ，Ｃｕ，Ａｇ，Ｐｔあるいは
これらに添加物を加えたものを用いることができる。上
記の２種類の強磁性材料と非磁性金属材料とを３基の蒸
発源を持つ真空蒸着装置、もしくは３基のタ−ゲットを
持つスパッタリング装置で蒸発させ、３基の蒸発源のシ
ャッターを交互に開閉したり、あるいは基板を３基の蒸
発源上を交互に通過させることによって、基板上に３種
類の材料を交互に積層させることができる。本発明の磁
性多層膜では、隣接する磁性薄膜層間に非磁性薄膜が存
在し、これら隣接する磁性薄膜の保磁力が互いに異なる
構成となっている。そして、磁性層の片方をＣｏＰｔを
主成分とすることにより、極めて大きな磁気抵抗変化が
安定に得られる。Further, the non-magnetic thin film layer 4 according to the present invention is a conductive material which plays a role of weakening the magnetic interaction between the magnetic thin film layers 2 and 3, specifically, Au, Cu, Ag, Pt or an additive to them. Can be used. The above two kinds of ferromagnetic materials and non-magnetic metal materials are vaporized by a vacuum vapor deposition apparatus having three evaporation sources or a sputtering apparatus having three targets, and the shutters of the three evaporation sources are alternated. The three types of materials can be alternately laminated on the substrate by opening and closing the substrate or alternately passing the substrate over three evaporation sources. In the magnetic multilayer film of the present invention, the non-magnetic thin film exists between the adjacent magnetic thin film layers, and the coercive forces of these adjacent magnetic thin films are different from each other. By using CoPt as a main component in one of the magnetic layers, a very large magnetoresistance change can be stably obtained.
【０００８】[0008]
【作用】本発明の磁性多層膜の作用を以下に説明する。
説明を簡単にするために、磁性薄膜Ｍ1 、非磁性薄膜お
よび磁性薄膜Ｍ2 がこの順序に積層されている積層体に
ついて考える。磁性薄膜層Ｍ1 ，Ｍ2 の保磁力をＨ
ｃ1、Ｈｃ2（０＜Ｈc1＜Ｈc2）とする。図２（ａ）に示
すように、初め外部磁場Ｈを Ｈ＜−Ｈｃ2 となるよう
に印加し、次いで外部磁界を Ｈ＞Ｈｃ2 まで増加さ
せ、さらに Ｈ＜−Ｈｃ2 まで減少させると、Ｍ1および
Ｍ2の磁化方向、すなわちスピンの方向は、図２（ａ）
の丸で囲んだ部分に示されるように変化する。外部磁界
Ｈの変化が Ｈｃ1→Ｈｃ2 の時、および −Ｈｃ1→−Ｈ
ｃ2 の時は、Ｍ1の磁化方向はＭ2の磁化方向と逆にな
る。そして、Ｍ1の磁化方向がＭ2の磁化方向と逆向きで
あると、すなわち、Ｍ1におけるスピンの向きがＭ2にお
けるスピンの向きと逆であると、この積層体に電流を流
した時に伝導電子がスピン散乱され、積層体の電気抵抗
が増加する。結果として、この積層体の磁気抵抗変化は
図２（ｂ）に示すような２つの山を持つ形状となる。The function of the magnetic multilayer film of the present invention will be described below.
To simplify the explanation, consider a laminated body in which a magnetic thin film M 1 , a nonmagnetic thin film and a magnetic thin film M 2 are laminated in this order. The coercive force of the magnetic thin film layers M 1 and M 2 is set to H
Let c 1 and Hc 2 (0 <Hc 1 <Hc 2) . As shown in FIG. 2A, when an external magnetic field H is first applied so that H <−Hc 2 , then the external magnetic field is increased to H> Hc 2 and further decreased to H <−Hc 2 , The magnetization directions of M 1 and M 2 , that is, the spin directions are shown in FIG.
It changes as shown in the circled part of. When the change of the external magnetic field H is Hc 1 → Hc 2 , and -Hc 1 → -H
At c 2 , the magnetization direction of M 1 is opposite to that of M 2 . When the magnetization direction of M 1 is opposite to the magnetization direction of M 2 , that is, the spin direction in M 1 is opposite to the spin direction in M 2 , a current flows through this stack. The conduction electrons are spin-scattered, and the electrical resistance of the stack increases. As a result, the magnetoresistive change of this laminate has a shape having two peaks as shown in FIG.
【０００９】ここで、このような磁性多層膜を磁気抵抗
効果素子として用いるためには、比較的小さい磁界で急
峻な磁気抵抗変化が得られる −Ｈｃ1＜Ｈ＜Ｈｃ1 の磁
界範囲で動作させることが望ましい。これより大きな磁
界、特にＨｃ2，−Ｈｃ2を超える磁界が加わると、図２
の磁気抵抗変化の片方の山からもう片方の山に移ること
になり、磁気抵抗の増加を生じる磁界の方向が逆転して
しまい、磁気抵抗効果素子としての動作が不安定とな
る。よってＨｃ2の値は大きい方が望ましい。このよう
な事態は磁気抵抗効果素子として、自動車，電気機械等
の雑音磁界の大きい環境で使用する場合には容易に起こ
り得る。しかし、 １００オングストロ―ム以下の薄膜
で大きなＨｃが得られる材料は少なく、また結晶構造に
よっては積層した場合に界面が粗くなり、磁気抵抗特性
が低下してしまう。本発明においては、この材料として
ＣｏＰｔを主成分とする磁性薄膜を用いることにより、
特に優れた特性が得られる。In order to use such a magnetic multilayer film as a magnetoresistive effect element, a steep magnetoresistance change can be obtained with a relatively small magnetic field, and the magnetic multi-layer film is operated in a magnetic field range of -Hc 1 <H <Hc 1 . Is desirable. When a magnetic field larger than this, especially a magnetic field exceeding Hc 2 and −Hc 2 , is applied,
The magnetic resistance changes from one peak to the other, and the direction of the magnetic field that causes an increase in the magnetic resistance is reversed, and the operation as the magnetoresistive effect element becomes unstable. Therefore, it is desirable that the value of Hc 2 is large. Such a situation can easily occur when the magnetoresistive element is used in an environment with a large noise magnetic field such as an automobile or an electric machine. However, there are few materials that can obtain a large Hc in a thin film having a thickness of 100 angstroms or less, and depending on the crystal structure, the interface becomes rough when laminated, and the magnetoresistive characteristics deteriorate. In the present invention, by using a magnetic thin film whose main component is CoPt as this material,
Particularly excellent characteristics are obtained.
【００１０】[0010]
【実施例】以下、本発明の実施例について説明する。３
基の蒸発源を用いた電子ビ―ム真空蒸着法により、表１
に示す２種類の磁性薄膜層と非磁性薄膜層とを交互に連
続的に積層し、厚さ４００オングストロ―ム前後の多層
膜を作製し、実施例１〜４とした。また、磁性薄膜とし
てＣｏＰｔ以外の材料を用いた他は実施例と同じ方法で
磁性多層膜を作製し、比較例１〜４とした。基板にはガ
ラス基板を用い、基板温度は １００℃とした。成膜速
度は０．１nm／秒とし、各蒸発源のシャッタの開閉時間
を変えて各層の膜厚を制御した。蒸着中の真空度は５×
１０-8Torrであった。Embodiments of the present invention will be described below. 3
Table 1 was prepared by the electron beam vacuum vapor deposition method using a base evaporation source.
The two types of magnetic thin film layers and non-magnetic thin film layers shown in (1) were alternately and continuously laminated to form multilayer films with a thickness of about 400 Å, and Examples 1 to 4 were obtained. Further, magnetic multilayer films were prepared in the same manner as in the example except that a material other than CoPt was used as the magnetic thin film, and comparative examples 1 to 4 were obtained. A glass substrate was used as the substrate, and the substrate temperature was 100 ° C. The film formation rate was 0.1 nm / sec, and the film thickness of each layer was controlled by changing the opening / closing time of the shutter of each evaporation source. Degree of vacuum during vapor deposition is 5 ×
It was 10 -8 Torr.
【００１１】これらの多層膜の磁気抵抗効果を測定する
ため、多層膜上に、厚さ ０．２μmのＡｕを蒸着法によ
り成膜し、フォトリソグラフィ−技術とイオンエッチン
グ技術を用いて幅１０μm の細線状にパタ−ン化した。
次に、検出部分の長さ ５００μm のみＡｕ層を化学エ
ッチングにより除去して、残りのＡｕ膜を電極とした。
これらの試料に５ｍＡの定電流を印加し、２端子法で抵
抗−磁界特性を測定した。抵抗−磁界特性は最大の抵抗
変化率と抵抗変化不安定となる最大磁界（Ｈmax ）で代
表させた。表１の測定結果から明らかなように、本発明
の磁性多層膜は、抵抗変化率がＣｏＰｔ以外の磁性薄膜
層を用いた磁性多層膜と同等以上であり、かつＨmax が
格段に大きいので、磁気抵抗効果素子とした場合、極め
て高い安定性を有する。In order to measure the magnetoresistive effect of these multilayer films, a 0.2 μm thick Au film was formed on the multilayer film by a vapor deposition method, and a 10 μm wide film was formed by photolithography and ion etching techniques. It was patterned into a thin line.
Next, the Au layer was removed by chemical etching only for the length of the detection portion of 500 μm, and the remaining Au film was used as an electrode.
A constant current of 5 mA was applied to these samples, and the resistance-magnetic field characteristics were measured by the two-terminal method. The resistance-magnetic field characteristics are represented by the maximum resistance change rate and the maximum magnetic field (Hmax) at which the resistance change becomes unstable. As is clear from the measurement results in Table 1, the magnetic multilayer film of the present invention has a rate of resistance change equal to or higher than that of a magnetic multilayer film using a magnetic thin film layer other than CoPt, and has a significantly large Hmax. When used as a resistance effect element, it has extremely high stability.
【００１２】（以下余白）(Hereinafter, the margin)
【表１】 [Table 1]
【００１３】[0013]
【発明の効果】以上説明したように、本発明の磁性多層
膜は、極めて大きな磁気抵抗変化が安定に得られ、高出
力の磁気抵抗効果素子に好適である。As described above, the magnetic multilayer film of the present invention is suitable for a high output magnetoresistive effect element because an extremely large magnetoresistive change can be stably obtained.
【図１】本発明の磁性多層膜の一例の断面図である。FIG. 1 is a cross-sectional view of an example of a magnetic multilayer film of the present invention.
【図２】本発明の磁性多層膜の外部磁界に対する磁化変
化と磁気抵抗変化を示す図である。FIG. 2 is a diagram showing a change in magnetization and a change in magnetoresistance with respect to an external magnetic field of the magnetic multilayer film of the present invention.
１ 基板 ２ 第１の磁性薄膜層 ３ 第２の磁性薄膜層 ４ 非磁性薄膜層 1 substrate 2 first magnetic thin film layer 3 second magnetic thin film layer 4 non-magnetic thin film layer
Claims (1)
膜層を交互に積層し、各積層磁性薄膜層間に非磁性薄膜
層を介在させた構造からなる磁性多層膜において、２種
類の磁性薄膜層の一方がＣｏＰｔを主成分とする材料よ
りなることを特徴とする磁性多層膜。1. A magnetic multilayer film having a structure in which two types of magnetic thin film layers having different coercive forces are alternately laminated on a substrate, and a non-magnetic thin film layer is interposed between the laminated magnetic thin film layers. A magnetic multilayer film, wherein one of the thin film layers is made of a material whose main component is CoPt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2412922A JP2677018B2 (en) | 1990-12-25 | 1990-12-25 | Magnetic multilayer film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2412922A JP2677018B2 (en) | 1990-12-25 | 1990-12-25 | Magnetic multilayer film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04223306A JPH04223306A (en) | 1992-08-13 |
| JP2677018B2 true JP2677018B2 (en) | 1997-11-17 |
Family
ID=18521662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2412922A Expired - Fee Related JP2677018B2 (en) | 1990-12-25 | 1990-12-25 | Magnetic multilayer film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2677018B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3411626B2 (en) * | 1992-08-27 | 2003-06-03 | ティーディーケイ株式会社 | Magnetic multilayer film, magnetoresistive effect element, and method of manufacturing the same |
-
1990
- 1990-12-25 JP JP2412922A patent/JP2677018B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04223306A (en) | 1992-08-13 |
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